CN106773404A - Wide viewing angle dot structure and array base palte - Google Patents
Wide viewing angle dot structure and array base palte Download PDFInfo
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- CN106773404A CN106773404A CN201611245381.5A CN201611245381A CN106773404A CN 106773404 A CN106773404 A CN 106773404A CN 201611245381 A CN201611245381 A CN 201611245381A CN 106773404 A CN106773404 A CN 106773404A
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- film transistor
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- tft
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
Abstract
The present invention provides a kind of wide viewing angle dot structure and array base palte.Wide viewing angle dot structure includes vertically disposed scanline groups and data line group, and two pixel regions formed by scanline groups and data line group, wherein, scanline groups include the first scan line, the second scan line and the three scan line that be arranged in parallel successively, and data line group includes the first data wire and the second data wire that be arranged in parallel；First scan line, the second scan line, the first data wire and the second data wire form the first pixel region；Second scan line, three scan line, the first data wire and the second data wire form the second pixel region；First pixel region includes the first primary area and the first sub-district, and the second pixel region includes the second primary area, the second sub-district and first film transistor, and the first sub-district is connected with the second sub-district by first film transistor.On the premise of angle of visibility wide is equally realized, said structure can reduce the quantity of thin film transistor (TFT), be advantageously implemented high aperture.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of wide viewing angle dot structure and array base palte.
Background technology
Vertical alignment mode (Vertical Alignment, abbreviation VA) is shown with its angle of visibility wide, high-contrast etc.
Advantage, as large scale TV TFT liquid crystal display (Thin Film Transistor Liquid
Crystal Display, abbreviation TFT-LCD) common schema.Colour cast (Color Shift) phenomenon under different angle of visibilities is
The significant problem that VA products are faced.In order to solve the problems, such as big visual angle colour cast, common countermeasure is designed using 8 farmlands, will
One pixel is divided into 2 areas, claims primary area (main areas) and sub-district (sub areas).Liquid crystal in the case of to voltage in each area
Have four it is different swing to, by making the voltage in sub areas less than mian areas, realize the liquid crystal in a pixel have 8 kinds it is different
Angle is swung to, so as to realize angle of visibility wide.Fig. 1 is common wide viewing angle pixel design, and 101 is data wire, and 201 is scanning
Line, 301 is main areas, and 401 is sub areas.There are 3 TFTs (Thin Film Transistor, abbreviation in figure
TFT), wherein 2 TFT are used to be charged for pixel, 1 TFT is used to be discharged for sub areas, and pixel also includes a shared electricity in addition
Hold (share electric capacity), the different potentials for realizing sub and main areas.
Said structure of the prior art, 3 TFT are needed to use for each pixel, are further to reduce making for TFT
With, high aperture is realized, a kind of method or structure is needed badly to be improved said structure.
The content of the invention
The present invention provides a kind of wide viewing angle dot structure and array base palte, is used to solve lead TFT quantity in the prior art more
The technical problem for causing aperture opening ratio not high.
One aspect of the present invention provides a kind of wide viewing angle dot structure, including：Vertically disposed scanline groups and data line group,
And two pixel regions formed by scanline groups and data line group, wherein, scanline groups include be arranged in parallel successively the
Scan line, the second scan line and three scan line, data line group include the first data wire and the second data wire that be arranged in parallel；
First scan line, the second scan line, the first data wire and the second data wire form the first pixel region；Second scan line, the 3rd sweep
Retouch line, the first data wire and the second data wire and form the second pixel region；First pixel region includes the first primary area and the first sub-district, the
Two pixel regions include the second primary area, the second sub-district and first film transistor, and the first sub-district passes through the first film with the second sub-district
Transistor is connected.
Further, the first sub-district includes the second thin film transistor (TFT) and the first sub-district pixel electrode, wherein, the second film is brilliant
The grid of body pipe is connected with the first scan line, and the source electrode of the second thin film transistor (TFT) is connected with the first data wire, the second film crystal
Drain electrode of the drain electrode of pipe respectively with the first sub-district pixel electrode and first film transistor is connected.
Further, the second sub-district includes the 3rd thin film transistor (TFT) and the second sub-district pixel electrode, the 3rd thin film transistor (TFT)
Grid be connected with the second scan line, the drain electrode of the 3rd thin film transistor (TFT) is connected with the second sub-district pixel electrode, and the 3rd film is brilliant
The source electrode of body pipe and the source electrode of first film transistor are connected with the second data wire, the grid of first film transistor and the 3rd
Scan line is connected.
Further, the second primary area includes the second primary area pixel electrode and the 4th thin film transistor (TFT), wherein, the 4th film is brilliant
The grid of body pipe is connected with the second scan line, and the drain electrode of the 4th thin film transistor (TFT) is connected with the second primary area pixel electrode, and the 4th is thin
The source electrode of film transistor is connected with the second data wire.
Further, the first primary area includes the first primary area pixel electrode and the 5th thin film transistor (TFT), wherein, the 5th film is brilliant
The grid of body pipe is connected with the first scan line, and the source electrode of the 5th thin film transistor (TFT) is connected with the first data wire, the 5th film crystal
The drain electrode of pipe is connected with the first primary area pixel electrode.
Further, the opposite polarity of the first sub-district pixel electrode and the second sub-district pixel electrode.
Further, the second primary area pixel electrode is identical with the polarity of the second sub-district pixel electrode.
Further, the first primary area pixel electrode is identical with the polarity of the first sub-district pixel electrode.
Another aspect of the present invention provides a kind of array base palte, including：Underlay substrate and wide viewing angle pixel described above
Structure, wherein, wide viewing angle dot structure is arranged on underlay substrate.
The present invention provide wide viewing angle dot structure and array base palte, due to by first film transistor simultaneously to first
Sub-district and the second sub-district are discharged, and the electric discharge of the first sub-district or the second sub-district need not be distinguished by respective thin film transistor (TFT)
Realized with shared capacitance connection, therefore, said structure not only reduces thin film transistor (TFT) quantity, while decreasing shared electricity
The use of appearance, further increases aperture opening ratio.
Brief description of the drawings
The invention will be described in more detail below based on embodiments and refering to the accompanying drawings.Wherein：
Fig. 1 is the circuit theory schematic diagram of wide viewing angle dot structure of the prior art；
Fig. 2 is the circuit theory schematic diagram of wide viewing angle dot structure provided in an embodiment of the present invention；
Fig. 3 is wide viewing angle dot structure schematic diagram provided in an embodiment of the present invention.
In the accompanying drawings, identical part uses identical reference.Accompanying drawing is not drawn according to actual ratio.
Specific embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
Fig. 2 and Fig. 3 is refer to, the embodiment of the present invention provides a kind of wide viewing angle dot structure, including：Vertically disposed scanning
Line group and data line group, and two pixel regions formed by scanline groups and data line group, wherein, scanline groups include according to
Secondary the first scan line 11 be arrangeding in parallel, the second scan line 12 and three scan line 13, data line group include be arranged in parallel the
One data wire 21 and the second data wire 22；First scan line 11, the second scan line 12, the first data wire 21 and the second data wire 22
Form the first pixel region；Second scan line 12, three scan line 13, the first data wire 21 and the second data wire 22 form the second picture
Plain area；First pixel region includes the first primary area 1 and the first sub-district 2, and the second pixel region includes the second primary area 3, the second sub-district 4 and the
One thin film transistor (TFT) TFT1, the first sub-district 2 is connected with the second sub-district 4 by first film transistor TFT1.
First scan line 11, the second scan line 12 and three scan line 13 are parallel to each other, and the second scan line 12 is located at the
Between scan line 11 and three scan line 13.First pixel region and the second pixel region are two neighbouring pixel regions, the
One sub-district 2 is connected with the second sub-district 4 by first film transistor TFT1, first film transistor TFT1 to the first pixel region and
The first sub-district 2 and the second sub-district 4 in second pixel region are discharged, and reduce its current potential relative to common wire, are made in reality
During lighting, the first primary area 1 and the second primary area 3 are brighter, and the first sub-district 2 and the second sub-district 4 are dark, make each pixel region (first
Pixel region or the second pixel region) all there are 8 kinds of liquid crystal to swing to, so as to realize angle of visibility wide.Due to the first sub-district 2 and the second son
Area 4 is connected by first film transistor TFT1, and first film transistor TFT1 can be realized simultaneously to the first sub-district 2 and the second son
Area 4 is discharged, therefore, on the premise of angle of visibility wide is equally realized, said structure can reduce the quantity of thin film transistor (TFT),
It is advantageously implemented high aperture.
In a specific embodiment of the invention, the first sub-district 2 includes the second thin film transistor (TFT) TFT2 and the first sub-district picture
Plain electrode 20, wherein, the grid of the second thin film transistor (TFT) TFT2 is connected with the first scan line 11, the second thin film transistor (TFT) TFT2's
Source electrode is connected with the first data wire 21, the drain electrode of the second thin film transistor (TFT) TFT2 respectively with the first sub-district pixel electrode 20 and first
The drain electrode of thin film transistor (TFT) TFT1 is connected.
First film transistor TFT1 is connected with the first sub-district 2 and the second sub-district 4 simultaneously, therefore can be brilliant by the first film
Body pipe TFT1 simultaneously to discharge the first sub-district 2 and the second sub-district 4, so that the current potential of the first sub-district 2 and the second sub-district 4 compares respectively
First primary area 1 and the second primary area 3 are low, hence for each pixel region (the first pixel region or the second pixel region), can have in 8
Liquid crystal is swung to, and while angle of visibility wide is realized, reduces the quantity of thin film transistor (TFT), realizes high aperture.Further, since making
The first sub-district 2 and the second sub-district 4 are discharged with said structure, compared with prior art, the first sub-district 2 or the second sub-district 4
Electric discharge need not be realized by with shared capacitance connection, therefore, said structure decreases the use of shared electric capacity, enters one
Step improves aperture opening ratio.
In another specific embodiment of the invention, the second sub-district 4 includes the 3rd thin film transistor (TFT) TFT3 and the second sub-district
Pixel electrode 40, the grid of the 3rd thin film transistor (TFT) TFT3 is connected with the second scan line 12, the leakage of the 3rd thin film transistor (TFT) TFT3
Pole is connected with the second sub-district pixel electrode 40, the source electrode of the 3rd thin film transistor (TFT) TFT3 and the source electrode of first film transistor TFT1
It is connected with the second data wire 22, the grid of first film transistor TFT1 is connected with three scan line 13.
Further, the opposite polarity of the first sub-district pixel electrode 20 and the second sub-district pixel electrode 40.
In another specific embodiment of the invention, the second primary area 3 includes the second primary area pixel electrode 30 and the 4th film
Transistor TFT4, wherein, the grid of the 4th thin film transistor (TFT) TFT4 is connected with the second scan line 12, the 4th thin film transistor (TFT) TFT4
Drain electrode be connected with the second primary area pixel electrode 30, the source electrode of the 4th thin film transistor (TFT) TFT4 is connected with the second data wire 22.
Further, the second primary area pixel electrode 30 is identical with the polarity of the second sub-district pixel electrode 40.
In a specific embodiment of the invention, the first primary area 1 includes the pixel electrode of the first primary area 1 and the 5th film crystal
Pipe TFT5, wherein, the grid of the 5th thin film transistor (TFT) TFT5 is connected with the first scan line 11, the source of the 5th thin film transistor (TFT) TFT5
Pole is connected with the first data wire 21, and the drain electrode of the 5th thin film transistor (TFT) TFT5 is connected with the pixel electrode of the first primary area 1.
Further, the first primary area pixel electrode 10 is identical with the polarity of the first sub-district pixel electrode 20.
Operationally, (the first primary area 1 and first is sub in the respective pixel area being connected with the first scan line 11 first for said structure
Area 2) charging complete, the pixel electrode being connected with the first scan line 11 and the first data wire 21 in figure is positive polarity.First sweeps
When retouching the opening of line 11, while being carried out to the pixel electrode of the first primary area 1 in the first scan line 11 and the first sub-district pixel electrode 20
Charge, its polarity is negative polarity.The first scan line 11 is closed afterwards, and the second scan line 12 is opened, while to the second scan line 12
On the second primary area pixel electrode 30 and the second sub-district pixel electrode 40 charged, its polarity be positive polarity.At the same time
One thin film transistor (TFT) TFT1 is opened, to the first sub-district pixel electrode 20 and second in the first scan line 11 and the second scan line 12
Sub-district pixel electrode 40 is discharged.By the size and each scan line (the first scan line that control first film transistor TFT1
11st, the second scan line 12 and three scan line 13) opening time come realize to each pixel region sub-district pixel electrode (first son
The sub-district pixel electrode 40 of area's pixel electrode 20 and second) current potential control.
The embodiment of the present invention also provides a kind of array base palte, including：Wide viewing angle in underlay substrate and above-described embodiment
Dot structure, wherein, wide viewing angle dot structure is arranged on underlay substrate.
Although by reference to preferred embodiment, invention has been described, is not departing from the situation of the scope of the present invention
Under, various improvement can be carried out to it and part therein can be replaced with equivalent.Especially, as long as in the absence of structure punching
Prominent, the every technical characteristic being previously mentioned in each embodiment can combine in any way.The invention is not limited in text
Disclosed in specific embodiment, but all technical schemes including falling within the scope of the appended claims.
Claims (9)
1. a kind of wide viewing angle dot structure, it is characterised in that including：Vertically disposed scanline groups and data line group, Yi Jiyou
Two pixel regions that the scanline groups and the data line group are formed, wherein, the scanline groups include parallel successively setting
The first scan line, the second scan line and the three scan line put, the data line group include the first data wire for be arrangeding in parallel and
Second data wire；First scan line, second scan line, first data wire and second data wire form the
One pixel region；Second scan line, the three scan line, first data wire and second data wire form second
Pixel region；First pixel region includes the first primary area and the first sub-district, and second pixel region includes the second primary area, the second son
Area and first film transistor, first sub-district are connected with second sub-district by the first film transistor.
2. wide viewing angle dot structure according to claim 1, it is characterised in that first sub-district includes that the second film is brilliant
Body pipe and the first sub-district pixel electrode, wherein, the grid of second thin film transistor (TFT) is connected with first scan line, described
The source electrode of the second thin film transistor (TFT) is connected with first data wire, and the drain electrode of second thin film transistor (TFT) is respectively with described
One sub-district pixel electrode is connected with the drain electrode of the first film transistor.
3. wide viewing angle dot structure according to claim 2, it is characterised in that second sub-district includes that the 3rd film is brilliant
Body pipe and the second sub-district pixel electrode, the grid of the 3rd thin film transistor (TFT) are connected with second scan line, and the described 3rd
The drain electrode of thin film transistor (TFT) is connected with the second sub-district pixel electrode, the source electrode and described first of the 3rd thin film transistor (TFT)
The source electrode of thin film transistor (TFT) is connected with second data wire, and the grid of the first film transistor and the described 3rd is scanned
Line is connected.
4. wide viewing angle dot structure according to claim 3, it is characterised in that second primary area includes the second primary area picture
Plain electrode and the 4th thin film transistor (TFT), wherein, the grid of the 4th thin film transistor (TFT) is connected with second scan line, described
The drain electrode of the 4th thin film transistor (TFT) is connected with second primary area pixel electrode, the source electrode of the 4th thin film transistor (TFT) with it is described
Second data wire is connected.
5. the wide viewing angle dot structure according to Claims 2 or 3, it is characterised in that first primary area includes the first master
Area's pixel electrode and the 5th thin film transistor (TFT), wherein, the grid of the 5th thin film transistor (TFT) is connected with first scan line,
The source electrode of the 5th thin film transistor (TFT) is connected with first data wire, the drain electrode of the 5th thin film transistor (TFT) and described
One primary area pixel electrode is connected.
6. wide viewing angle dot structure according to claim 3, it is characterised in that the first sub-district pixel electrode with it is described
The opposite polarity of the second sub-district pixel electrode.
7. wide viewing angle dot structure according to claim 4, it is characterised in that second primary area pixel electrode with it is described
The polarity of the second sub-district pixel electrode is identical.
8. wide viewing angle dot structure according to claim 5, it is characterised in that first primary area pixel electrode with it is described
The polarity of the first sub-district pixel electrode is identical.
9. a kind of array base palte, it is characterised in that including：Underlay substrate and according to any one of claim 1-8
Wide viewing angle dot structure, wherein, the wide viewing angle dot structure is arranged on the underlay substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611245381.5A CN106773404B (en) | 2016-12-29 | 2016-12-29 | Wide-viewing-angle pixel structure and array substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611245381.5A CN106773404B (en) | 2016-12-29 | 2016-12-29 | Wide-viewing-angle pixel structure and array substrate |
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| Publication Number | Publication Date |
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| CN106773404A true CN106773404A (en) | 2017-05-31 |
| CN106773404B CN106773404B (en) | 2020-09-08 |
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| CN201611245381.5A Active CN106773404B (en) | 2016-12-29 | 2016-12-29 | Wide-viewing-angle pixel structure and array substrate |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107861278A (en) * | 2017-12-26 | 2018-03-30 | 昆山龙腾光电有限公司 | Liquid crystal display device |
| CN110346995A (en) * | 2019-07-26 | 2019-10-18 | 深圳市华星光电半导体显示技术有限公司 | A kind of array substrate |
| CN111240106A (en) * | 2020-03-12 | 2020-06-05 | Tcl华星光电技术有限公司 | Display panel |
| WO2021103203A1 (en) * | 2019-11-27 | 2021-06-03 | 深圳市华星光电半导体显示技术有限公司 | Display panel and electronic device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015125365A (en) * | 2013-12-27 | 2015-07-06 | 株式会社ジャパンディスプレイ | Liquid crystal display |
| CN105045009A (en) * | 2015-08-24 | 2015-11-11 | 深圳市华星光电技术有限公司 | Liquid crystal display panel and array substrate thereof |
-
2016
- 2016-12-29 CN CN201611245381.5A patent/CN106773404B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015125365A (en) * | 2013-12-27 | 2015-07-06 | 株式会社ジャパンディスプレイ | Liquid crystal display |
| CN105045009A (en) * | 2015-08-24 | 2015-11-11 | 深圳市华星光电技术有限公司 | Liquid crystal display panel and array substrate thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107861278A (en) * | 2017-12-26 | 2018-03-30 | 昆山龙腾光电有限公司 | Liquid crystal display device |
| CN107861278B (en) * | 2017-12-26 | 2020-01-03 | 昆山龙腾光电股份有限公司 | Liquid crystal display device having a plurality of pixel electrodes |
| CN110346995A (en) * | 2019-07-26 | 2019-10-18 | 深圳市华星光电半导体显示技术有限公司 | A kind of array substrate |
| WO2021103203A1 (en) * | 2019-11-27 | 2021-06-03 | 深圳市华星光电半导体显示技术有限公司 | Display panel and electronic device |
| CN111240106A (en) * | 2020-03-12 | 2020-06-05 | Tcl华星光电技术有限公司 | Display panel |
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| Publication number | Publication date |
|---|---|
| CN106773404B (en) | 2020-09-08 |
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Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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