CN106771948A - 一种mos管开启电压测量装置 - Google Patents
一种mos管开启电压测量装置 Download PDFInfo
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- CN106771948A CN106771948A CN201611158840.6A CN201611158840A CN106771948A CN 106771948 A CN106771948 A CN 106771948A CN 201611158840 A CN201611158840 A CN 201611158840A CN 106771948 A CN106771948 A CN 106771948A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000005259 measurement Methods 0.000 title claims abstract description 12
- 230000006698 induction Effects 0.000 claims abstract description 20
- 230000005611 electricity Effects 0.000 claims description 4
- 239000013256 coordination polymer Substances 0.000 claims description 3
- 238000004088 simulation Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 2
- 238000005538 encapsulation Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
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Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201611158840.6A CN106771948B (zh) | 2016-12-15 | 2016-12-15 | 一种mos管开启电压测量装置 |
Applications Claiming Priority (1)
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CN201611158840.6A CN106771948B (zh) | 2016-12-15 | 2016-12-15 | 一种mos管开启电压测量装置 |
Publications (2)
Publication Number | Publication Date |
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CN106771948A true CN106771948A (zh) | 2017-05-31 |
CN106771948B CN106771948B (zh) | 2019-06-21 |
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Family Applications (1)
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CN201611158840.6A Active CN106771948B (zh) | 2016-12-15 | 2016-12-15 | 一种mos管开启电压测量装置 |
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CN (1) | CN106771948B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111060793A (zh) * | 2019-11-13 | 2020-04-24 | 南京航空航天大学 | 直流固态功率控制器的功率管导通电压的在线测量电路 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104464824A (zh) * | 2013-09-17 | 2015-03-25 | 中芯国际集成电路制造(北京)有限公司 | 存储阵列中的mos管阈值电压的测试方法 |
JP2016008936A (ja) * | 2014-06-26 | 2016-01-18 | 株式会社デンソー | 半導体素子の検査回路および検査方法 |
CN105723617A (zh) * | 2013-11-15 | 2016-06-29 | 旭化成微电子株式会社 | 电压检测器、基准电压设定方法以及程序 |
CN205453655U (zh) * | 2015-12-20 | 2016-08-10 | 西安图安电机驱动系统有限公司 | 一种直接测量mosfet导通后的漏源电压进行短路保护的电路 |
CN105988072A (zh) * | 2015-02-15 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管的开启电压测试系统及测试方法 |
-
2016
- 2016-12-15 CN CN201611158840.6A patent/CN106771948B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104464824A (zh) * | 2013-09-17 | 2015-03-25 | 中芯国际集成电路制造(北京)有限公司 | 存储阵列中的mos管阈值电压的测试方法 |
CN105723617A (zh) * | 2013-11-15 | 2016-06-29 | 旭化成微电子株式会社 | 电压检测器、基准电压设定方法以及程序 |
JP2016008936A (ja) * | 2014-06-26 | 2016-01-18 | 株式会社デンソー | 半導体素子の検査回路および検査方法 |
CN105988072A (zh) * | 2015-02-15 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管的开启电压测试系统及测试方法 |
CN205453655U (zh) * | 2015-12-20 | 2016-08-10 | 西安图安电机驱动系统有限公司 | 一种直接测量mosfet导通后的漏源电压进行短路保护的电路 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111060793A (zh) * | 2019-11-13 | 2020-04-24 | 南京航空航天大学 | 直流固态功率控制器的功率管导通电压的在线测量电路 |
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Publication number | Publication date |
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CN106771948B (zh) | 2019-06-21 |
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Effective date of registration: 20200426 Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing, Daxing District Patentee after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Address before: 101312 No. 26, A District, Tianzhu Road, Tianzhu Airport Industrial Zone, Beijing, Shunyi District Patentee before: Beijing BBEF Science & Technology Co.,Ltd. |
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Effective date of registration: 20240717 Address after: 100176 4s01, 4th floor, building 1, No.8 courtyard, Wenchang Avenue, Beijing Economic and Technological Development Zone, Daxing District, Beijing Patentee after: Beijing Huacheng Electronics Co.,Ltd. Country or region after: China Address before: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Wenchang Road 8 Patentee before: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Country or region before: China |
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