CN106757370A - A kind of method for preparing large area organic inorganic hybridization perovskite monocrystal nano line array - Google Patents
A kind of method for preparing large area organic inorganic hybridization perovskite monocrystal nano line array Download PDFInfo
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- CN106757370A CN106757370A CN201611075753.4A CN201611075753A CN106757370A CN 106757370 A CN106757370 A CN 106757370A CN 201611075753 A CN201611075753 A CN 201611075753A CN 106757370 A CN106757370 A CN 106757370A
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000009396 hybridization Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000002904 solvent Substances 0.000 claims abstract description 18
- 239000002070 nanowire Substances 0.000 claims abstract description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 16
- 239000002243 precursor Substances 0.000 claims abstract description 10
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 12
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 239000005357 flat glass Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 abstract description 2
- 239000012530 fluid Substances 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- -1 Formic acid glycol ester Chemical class 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 241000252506 Characiformes Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/54—Organic compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/62—Whiskers or needles
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2803—Investigating the spectrum using photoelectric array detector
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Chemical & Material Sciences (AREA)
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Abstract
The invention discloses a kind of method for preparing large area organic inorganic hybridization perovskite monocrystal nano line array, it uses fluid to guide hyposynergia solvent vapo(u)r assisting crystallisation.The method is mainly comprised the following steps：First, a certain amount of perovskite poor solvent is injected in closed container, then on one slope of low-angle of interior placement, then placed the substrate with photoresist array as growth templates on the slope, and make the direction of slopes consistent with the direction of photoresist array, the last organic inorganic hybridization perovskite precursor solution that certain volume is instilled in template, closed container, after perovskite solution evaporation is complete, in the both sides of photoresist array and the array of organic inorganic hybridization perovskite nano wire has been obtained.It is this method process is simple, with low cost, practical.
Description
Technical field
The present invention relates to a kind of manufacture method of large area organic inorganic hybridization perovskite monocrystal nano line array.Belonging to has
Machine-inorganic hybridized semiconductor nano material manufacture field.
Background technology
In recent years, organic inorganic hybridization perovskite（CH3NH3PbI3）The lifting that solar battery efficiency is advanced by leaps and bounds is much
More than other kinds of new ideas solar cell, almost with the thin-film solar cells phase such as the CIGS of development many decades
When, and still have very big room for promotion in the future.This has benefited from organic inorganic hybridization perovskite material, and there is extinction high to imitate
Rate, can cover whole visible light wave range, exciton diffusion distance and mobility high long.At present, compared to being widely studied
For perovskite thin film, the research of perovskite nano material is delayed.In fact, naturally occurring a large amount of in perovskite thin film material
Defect（Including：Impurity and fault of construction）Govern the performance of perovskite thin film device.
From inorganic or organic nano material research, we it is contemplated that, perovskite nano material not only remains it
The excellent specific property that monocrystal material has, perovskite nano wire is more for its peculiar advantage, for example, more fully light absorbs and more
Superior mechanical performance.But in recent years the preparation technology of perovskite nano wire it is relatively fewer and can not show a candle to film preparing technology into
It is ripe.Also, single nano wire is difficult to apply in large-scale device application, one kind is developed for this and is received for large area perovskite
The technology of preparing of nanowire arrays is the precondition of its application.
The content of the invention
The present invention provides a kind of method for preparing large area organic inorganic hybridization perovskite monocrystal nano line array, predominantly
Fluid guides hyposynergia solvent vapo(u)r assisting crystallisation method.It is this method process is simple, with low cost, practical, in one-dimensional calcium
There is important application prospect in the opto-electronic device of titanium ore monocrystal material.
To achieve the above object of the invention, the present invention uses following preparation method：
1）Taken in a closed container and put a low-angle slope, be then injected into a certain amount of perovskite poor solvent described close
Close in container, the liquid level of the poor solvent is less than runway bottom side；
2）One layer of photoresist is covered in a substrate and patterned process is carried out, photoresist striped battle array is obtained on the substrate
Row template, the substrate is placed on the slope, and makes the direction of the photoetching striped glue array and the slope direction
It is consistent；
3）Certain mass perovskite material is dissolved in the perovskite good solvent of certain volume, precursor solution is prepared；
4）The precursor solution for taking certain volume is dripped in the substrate, the closed container is closed, in photoresist striped
Both sides obtain organic inorganic hybridization perovskite nano-wire array.
In a preferred embodiment, step 1）Described in low-angle slope inclination angle be 3-15 °.
In a preferred embodiment, step 1）Described in perovskite poor solvent be：Dichloromethane, chloroform or first
Benzene.
In a preferred embodiment, step 2）Described in substrate be silicon chip, oxidized silicon chip, sheet glass or flexibility poly- naphthalene two
Formic acid glycol ester, polyethylene terephthalate, polyimide substrate.
In a preferred embodiment, step 2）Described in photoresist array width of fringe it is equal with interval width, be
2-5 mm。
In a preferred embodiment, step 3）Described in perovskite good solvent be dimethylformamide.
In a preferred embodiment, step 3）The concentration of the precursor solution is 0.05-0.12mol/L.
Change the solubility of precursor solution and the species of effumability solvent, the change of perovskite nano wire pattern can be caused
Change.
Compared with prior art, the invention has the advantages that：
1st, the growth course of perovskite monocrystal nano line array is simple to operate.Without large scale equipment instrument and ultra-clean condition.
2nd, growth substrate selectivity is wide, can be silicon chip, sheet glass, or even polyethylene terephthalate, poly- naphthalene two
The flexible substrates such as formic acid glycol ester, polyimides.
3rd, large area, uniform perovskite monocrystal nano line array can be prepared.
4th, the perovskite monocrystal nano line array for preparing, can be applied to high-performance wide with good photoelectric properties
In spectrum photodetector.
5th, because preparation manipulation process of the present invention is simple and easy to apply, favorable repeatability, course of reaction is gentle, with universality,
Therefore there is the value for promoting the use.
Brief description of the drawings
Fig. 1 is the preparation facilities of one embodiment of the invention；
Fig. 2 is the SEM figures of perovskite nano-wire array prepared by one embodiment of the invention.
Fig. 3 is the SEM figures of the magnification at high multiple of perovskite nano-wire array prepared by one embodiment of the invention.
Specific embodiment
1 and describe the present invention in detail in conjunction with the embodiments below with reference to the accompanying drawings.Following examples are to present invention
Further illustrate, rather than limiting the scope of the invention.
A kind of method for preparing large area organic inorganic hybridization perovskite nano-wire array, it is mainly satisfied using poor solvent
Crystallized with steam volatilization auxiliary.Comprise the following steps：
1）Preparation facilities is built：By closed container and glass gasket immersion alkali lye certain hour, water, decontamination are then used successively
Powder, water are washed, and finally use oven for drying.The slope for putting a low-angle is taken with glass gasket in closed container, preferably
The slopes angle is 3-15 ° of inclination angle, more preferably 5-10 °.Then a certain amount of perovskite poor solvent is injected into appearance
In device, it is careful not to cover slope.Then closed container is placed in the heating plate of preset temperature, saturated vapor atmosphere is obtained, such as
Shown in accompanying drawing 1.The alkali lye is preferably the ethanol solution of NaOH.The perovskite poor solvent be preferably dichloromethane,
Chloroform or toluene.
2）The preparation of photoresist array mould plate：Base wafer immersion piranha solution certain hours are taken, is then used successively
Acetone, ethanol, deionized water are cleaned by ultrasonic, and are finally dried up with nitrogen.In clean substrate, carry out traditional photoetching process and enter
Row patterned process, obtains the template of the photoresist striped array of negativity in substrate.The pattern of array is with a fixed strip
The periodic photoresist striped array of line width and a fixed intervals.Then this substrate is placed on the slope in sealing container
On, and it is consistent the direction of its striped array and slope direction.The substrate can be silicon chip, oxidized silicon chip, sheet glass or
Flexible PEN, polyethylene terephthalate, polyimides etc..Preferably, photoresist striped battle array
The width of fringe and its interval width of row are equal in magnitude.It is furthermore preferred that shown width of fringe and interval width are 2-5 μm.
3）The preparation of precursor solution：Certain mass perovskite material is dissolved in the perovskite good solvent of certain volume,
Such as dimethylformamide, stirring is to being completely dissolved.Preferably, the CH for preparing3NH3PbI3The concentration of solution is 0.05-
0.3mol/L。
4）The preparation of perovskite nano-wire array：The precursor solution for taking certain volume is dripped on photoetching glue pattern plate, is closed
, then be positioned over whole device in the environment of preset temperature by container, stands certain hour, treats that dimethylformamide is evaporated completely
Entirely, organic inorganic hybridization perovskite nano-wire array has just been obtained on the both sides of photoresist striped.In an exemplary embodiment, drop
The CH of 10 uL3NH3PbI3Solution keeps appropriate time in substrate under airtight condition, obtains CH3NH3PbI3Nano wire.
Fig. 2-3 schemes for the SEM of perovskite nano-wire array manufactured in the present embodiment, wherein, Fig. 3 is local magnification at high multiple
SEM schemes.It can be seen that the nano-wire array for obtaining large area has the orientation of height, size uniform, nanometer line length
Degree reaches a millimeter rank.
The method for preparing large area organic inorganic hybridization perovskite nano-wire array of the present invention, growth course operation
Simply, without large scale equipment instrument and ultra-clean condition.Growth substrate selectivity is wide, can be silicon chip, sheet glass, even gather to benzene
The flexible substrates such as naphthalate, PEN, polyimides.Large area, uniform can be prepared
Perovskite monocrystal nano line array, with good photoelectric properties, can be applied in photodetector.Preparation manipulation process
Simple and easy to apply, favorable repeatability, course of reaction is gentle, with universality, therefore with the value for promoting the use.
Claims (7)
1. a kind of method for preparing large area organic inorganic hybridization perovskite monocrystal nano line array, comprises the following steps：
1）Taken in a closed container and put a low-angle slope, be then injected into a certain amount of perovskite poor solvent described close
Close in container, the liquid level of the poor solvent is less than runway bottom side；
2）One layer of photoresist is covered in a substrate and patterned process is carried out, photoresist striped battle array is obtained on the substrate
Row template, the substrate is placed on the slope, and makes the direction of the photoetching striped glue array and the slope direction
It is consistent；
3）Certain mass perovskite material is dissolved in the perovskite good solvent of certain volume, precursor solution is prepared；
4）The precursor solution for taking certain volume is dripped in the substrate, the closed container is closed, in photoresist striped
Both sides obtain organic inorganic hybridization perovskite nano-wire array.
2. method according to claim 1, it is characterised in that
The step 1）Described in low-angle slope inclination angle be 3-15 °.
3. method according to claim 2, it is characterised in that
The step 1）Described in perovskite poor solvent be：Dichloromethane, chloroform or toluene.
4. method according to claim 1, it is characterised in that
The step 2）Described in substrate be the PEN of silicon chip, oxidized silicon chip, sheet glass or flexibility, poly- right
PET, polyimide substrate.
5. method according to claim 4, it is characterised in that
The step 2）Described in photoresist array width of fringe it is equal with interval width, be 2-5 mm.
6. method according to claim 1, it is characterised in that
The step 3）Described in perovskite good solvent be dimethylformamide.
7. method according to claim 1, it is characterised in that
The step 3）The concentration of the precursor solution is 0.05-0.12 mol/L.
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| CN201611075753.4A CN106757370A (en) | 2016-11-30 | 2016-11-30 | A kind of method for preparing large area organic inorganic hybridization perovskite monocrystal nano line array |
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| CN201611075753.4A CN106757370A (en) | 2016-11-30 | 2016-11-30 | A kind of method for preparing large area organic inorganic hybridization perovskite monocrystal nano line array |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108878573A (en) * | 2018-06-29 | 2018-11-23 | 合肥工业大学 | A kind of photodetector of driving certainly and preparation method thereof based on the quasi- one-dimentional structure of methylamino lead iodide |
| CN110676381A (en) * | 2018-07-02 | 2020-01-10 | 北京大学 | Patterned perovskite single crystal array and preparation method of photoelectric device thereof |
| CN111103274A (en) * | 2019-12-23 | 2020-05-05 | 厦门大学 | Method for rapidly detecting lead ions in sample liquid |
| CN111430541A (en) * | 2019-01-09 | 2020-07-17 | 北京大学 | Anti-counterfeiting structure based on patterned perovskite single crystal array and preparation and application thereof |
| CN111926387A (en) * | 2020-06-23 | 2020-11-13 | 北京大学 | Preparation method of ultrathin strip-shaped perovskite single crystal |
| CN111952463A (en) * | 2020-08-26 | 2020-11-17 | 合肥工业大学 | Preparation method of large-area perovskite nanowire array |
| CN112397649A (en) * | 2020-11-11 | 2021-02-23 | 北京大学 | Preparation method of large-area perovskite semiconductor single crystal film |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108878573A (en) * | 2018-06-29 | 2018-11-23 | 合肥工业大学 | A kind of photodetector of driving certainly and preparation method thereof based on the quasi- one-dimentional structure of methylamino lead iodide |
| CN110676381A (en) * | 2018-07-02 | 2020-01-10 | 北京大学 | Patterned perovskite single crystal array and preparation method of photoelectric device thereof |
| CN110676381B (en) * | 2018-07-02 | 2021-08-06 | 北京大学 | Patterned perovskite single crystal array and preparation method of photoelectric device thereof |
| CN111430541A (en) * | 2019-01-09 | 2020-07-17 | 北京大学 | Anti-counterfeiting structure based on patterned perovskite single crystal array and preparation and application thereof |
| CN111430541B (en) * | 2019-01-09 | 2021-12-28 | 北京大学 | Anti-counterfeiting structure based on patterned perovskite single crystal array and preparation and application thereof |
| CN111103274A (en) * | 2019-12-23 | 2020-05-05 | 厦门大学 | Method for rapidly detecting lead ions in sample liquid |
| CN111103274B (en) * | 2019-12-23 | 2021-04-20 | 厦门大学 | Method for rapidly detecting lead ions in sample liquid |
| CN111926387A (en) * | 2020-06-23 | 2020-11-13 | 北京大学 | Preparation method of ultrathin strip-shaped perovskite single crystal |
| CN111926387B (en) * | 2020-06-23 | 2021-08-17 | 北京大学 | Preparation method of ultrathin strip-shaped perovskite single crystal |
| CN111952463A (en) * | 2020-08-26 | 2020-11-17 | 合肥工业大学 | Preparation method of large-area perovskite nanowire array |
| CN111952463B (en) * | 2020-08-26 | 2023-04-07 | 合肥工业大学 | Preparation method of large-area perovskite nanowire array |
| CN112397649A (en) * | 2020-11-11 | 2021-02-23 | 北京大学 | Preparation method of large-area perovskite semiconductor single crystal film |
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