CN109336852B - Non-fullerene electron transport material and synthetic method and application thereof - Google Patents
Non-fullerene electron transport material and synthetic method and application thereof Download PDFInfo
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Abstract
The invention belongs to the technical field of solar cells, and relates to a non-fullerene electron transport material, a synthesis method and application thereof, in particular to a trans-planar perovskite solar cell using the material. The perovskite solar cell sequentially comprises a transparent conductive substrate, a hole transport layer, a perovskite absorption layer, an electron transport layer, a buffer layer and a metal electrode. The electron transport layer is prepared from a donor-acceptor (D-A) configuration non-fullerene electron transport material TPA-3CN or an N type doped non-fullerene electron transport material; the invention provides an electron transport material which is simple to synthesize, low in cost, stable in natural conditions, high in electron mobility, high in conductivity and the like.
Description
Technical Field
The invention belongs to the technical field of solar cells, and relates to a non-fullerene electron transport material, a synthetic method thereof and application thereof in a trans-planar perovskite solar cell.
Background
As a new Solar cell technology, Perovskite Solar Cells (PSCs) are evaluated as one of the important scientific discoveries due to their advantages of high photoelectric conversion performance, low cost, simple preparation process, etc., and attract the general attention of many students. Classical perovskite solar cells employ a "sandwich" structure, i.e. a perovskite light absorbing layer is sandwiched between an Electron Transport Layer (ETL) and a Hole Transport Layer (HTL). Among them, the main role of the electron transport layer is to efficiently extract and transport electrons to the electrode surface at the perovskite light absorption layer/electron transport material interface while suppressing the transport of holes. Therefore, the electron transport layer plays a crucial role in charge transport of perovskite solar cells. At present, fullerene and its derivatives (C60, PC61BM, ICBA, etc.) have good electrophilicity and charge transport isotropy, and are widely used as electron transport materials in highly efficient trans-planar perovskite solar cells. (w.chen, y.wu, y.yue, j.liu, w.zhang, x.yang, h.chen, e.bi, i.ashraful, M.
Han, Science,2015,350,6263; zhao, m.sexton, h. -y.park, g. Baure, j.c.nino, f.so, adv.energy mater, 2015,5, 1401855; y.wu, x.yang, w.chen, y.yue, m.cai, f.xie, e.bi, a.islam, l.han, Nature Energy,2016,1, 16148; g.kakavelakis, t.maksudov, d.konios, i.paradisanos, g.kioseolou, e.stratakis, e.kymakis, adv.energy mater, 2017,7, 1602120; despite z.zhou, x.li, m.cai, f.xie, y.wu, z.lan, x.yang, y.qiang, a.islam, l.han, adv.energy mater, 2017,7, 1700763), fullerenes and their derivatives have many inherent drawbacks such as poor photochemical stability in air, relatively fixed and difficult to adjust band position, high production costs, etc., which limit the application of such electron transport materials in the large-scale production of trans-planar perovskite solar cells. Accordingly, numerous scholars have worked to develop new non-fullerene electron transport materials and have attempted to apply them to trans-planar perovskite solar cells. In 2016, YIp et al report an amino-functionalized copolymer PFN-2TNDI based on structural units of fluorene, thiophene bridge group and naphthalene diimide, and successfully replace PC61BM as an electron transport material to be applied to a trans-perovskite solar cell, so that the photoelectric conversion efficiency of 16.7% is obtained. (c.sun, z.wu, h. -l.yip, h.zhang, x. -f.jiang, q.xue, z.hu, y.shen, m.wang, f.huang, y.cao.adv.energy mater.,2016,6, 1501534.). Recently, a subject group of professor Alex k. -y.jen at washington university in the united states developed a series of novel electron transport materials based on Hexaazatrinaphthylene (HATNA) derivatives, and the photoelectric conversion efficiency of over 17% was obtained when the materials were applied to a trans-perovskite solar cell. (D, Zhao, Z.Zhu, M.Y.Kuo, C.C.Chueh, A.K.Jen.Angew.chem.int.Ed.2016,55,8999.)
In recent years, a series of electron transport materials with Donor (acceptor) (D-a) and acceptor-Donor-acceptor (a-D-a) configurations are widely used in the field of organic thin film solar cells, and high photoelectric conversion efficiency of about 15% is obtained. However, such electron transport materials have never been used in the field of perovskite solar cells due to their energy level mismatch with perovskite absorption layers. The invention provides a trans-type planar perovskite solar cell based on a D-A configuration non-fullerene electron transport material and a preparation method thereof, wherein the energy level of the D-A structure electron transport material is regulated and controlled by a molecular engineering means, and the D-A structure electron transport material is successfully applied to the trans-type planar perovskite solar cell. So far, such trans-planar perovskite solar cells based on D-a configuration non-fullerene electron transport materials have not been reported.
Disclosure of Invention
The invention aims to develop a novel non-fullerene electron transport material, and adopts N-type dopant H2 to dope the electron transport material, and provides a trans-planar perovskite solar cell based on a D-A configuration non-fullerene electron transport material and a preparation method thereof. The electron transport material adopts a D-A configuration, triphenylamine groups (TPA) and furan derivatives (3CN) containing 3 cyano groups are respectively used as donor groups (D) and acceptor groups (A), and the material has the characteristics of interface energy level matching, stable natural conditions, low cost, high electron mobility, high conductivity and the like.
The technical scheme adopted by the invention is as follows:
a non-fullerene electron transport material having the chemical name: 4,4' -tris- (E) -3- [2- (2-cyanopropenylcyano) -3-cyano) -5,5, -dimethyl-2, 3-dihydrofuran ] vinyl-triphenylamine, abbreviated as TPA-3CN, and having the structural formula:
a method for synthesizing a non-fullerene electron transport material TPA-3CN comprises the following steps:
dissolving tri (4-formylphenyl) amine and furan derivatives in an organic solvent, adding triethylamine, uniformly stirring, and carrying out heating reflux reaction; and after the reaction is finished, cooling to room temperature, adding a hydrochloric acid aqueous solution into the reaction solution to adjust the pH of the reaction solution to be neutral, adding a dichloromethane solution for extraction, collecting an organic layer, drying the organic layer by adopting anhydrous magnesium sulfate, filtering, removing the solvent under reduced pressure, separating and purifying the remainder by using a silica gel column chromatography, and drying in vacuum to obtain the electronic transmission material TPA-3 CN.
The specific reaction process is as follows:
the molar ratio of the tri (4-formylphenyl) amine to the furan derivative is 1: 3.6; the reaction concentration is 0.03-0.06 mol/L and 0.108-0.216 mol/L respectively); the addition amount of triethylamine is 3-5 drops; the concentration of the hydrochloric acid aqueous solution is 0.1-0.2M.
The organic solvent is anhydrous chloroform, acetonitrile or tetrahydrofuran.
The temperature of the heating reflux reaction is 61-82 ℃, and the time is 24-36 h.
A trans-planar perovskite solar cell comprises an electron transport layer, wherein the electron transport layer comprises a non-fullerene electron transport material prepared by the invention.
The perovskite solar cell structurally comprises a transparent conductive substrate, a hole transport layer, a perovskite absorption layer, an electron transport layer, a buffer layer and a metal cathode, and the preparation method comprises the following steps:
(1) preparation of transparent conductive substrate: cutting a transparent conductive substrate into a fixed size, etching the conductive substrate by using zinc powder and hydrochloric acid, sequentially placing the conductive substrate in deionized water, acetone and ethanol solution, ultrasonically cleaning for 15min, and then placing the conductive substrate in an ultraviolet ozone machine for treatment for 15 min;
(2) preparation of hole transport layer: forming a hole transport layer on the transparent conductive substrate treated in the step (1);
(3) preparation of perovskite precursor liquid and preparation of perovskite absorption layer: reacting NH3CH3I and PbI2、PbCl2Or PbBr2Mixing and dissolving the mixture in a molar ratio of 3: 1-1: 1 in a mixed solution of dimethylformamide and N, N-dimethyl sulfoxide in a volume ratio of 4:1, and stirring the mixture at room temperature to obtain CH3NH3PbI3、CH3NH3PbI3-xBrxOr CH3NH3PbI3-xClxThe perovskite precursor liquid of (a); then spin-coating the perovskite precursor solution on the hole transport layer to form a perovskite absorption layer;
(4) preparation of an electron transport layer: preparing chlorobenzene solution of a non-fullerene electron transport material TPA-3CN, dropwise adding the solution on the perovskite absorption layer for spin coating, and controlling the revolution number to be 1800rpm and the spin coating time to be 30s to form an electron transport layer;
(5) preparing a buffer layer: preparing a buffer layer on the electron transmission layer by using an evaporation or spin coating method;
(6) evaporation of metal cathode: transferring the substrate obtained in the step (5) into a thermal evaporation system, wherein the vacuum degree is less than or equal to 1 multiplied by 10- 4And (3) evaporating a metal cathode under the Pa condition.
In the step (4), the chlorobenzene solution of the non-fullerene electron transport material TPA-3CN further includes an N-type dopant 2- (2, 6-dimethoxyphenyl) -1, 3-dimethyl-benzimidazole, and the amount of the N-type dopant 2- (2, 6-dimethoxyphenyl) -1, 3-dimethyl-benzimidazole is 0.01 to 0.04% of the TPA-3 CN.
The transparent conductive substrate is ITO conductive glass, FTO conductive glass or a flexible substrate;
the hole transport layer is NiO, PEDOT, PSS and MoO3Or V2O5One or more of;
the perovskite absorption layer is CH3NH3PbI3、CH3NH3PbI3-xBrx or CH3NH3PbI3-one of xClx;
the buffer layer is one or more of BCP, TiOx, PEIE or Bphen;
the metal cathode is one of gold, silver, copper or aluminum.
The invention has the beneficial effects that:
(1) the perovskite solar cell provided by the invention adopts a D-A configuration non-fullerene material TPA-3CN as an electron transport material; the material has the advantages of simple synthesis, low cost, stable natural condition, high electron mobility, high conductivity and the like. Compared with the traditional perovskite solar cell based on the fullerene electron transport material, the perovskite solar cell has lower manufacturing cost and higher photoelectric conversion efficiency, and is beneficial to promoting the large-scale commercial production of the perovskite solar cell. Furthermore, the battery has no significant relaxation phenomenon under the working condition. Meanwhile, due to the good solution processability of the non-fullerene electron transport material TPA-3CN at low temperature, the non-fullerene electron transport material TPA-3CN is successfully applied to the flexible perovskite solar cell, and higher photoelectric conversion efficiency is obtained.
(2) The invention can not only improve the photoelectric property of the trans-perovskite solar cell, but also effectively reduce the manufacturing cost of the cell.
Drawings
FIG. 1 shows the molecular structure of the electron transport material TPA-3CN and the N-type dopant H2.
FIG. 2a) electron mobility test plots based on different doping ratios (0%, 0.01%, 0.02%, 0.03%, 0.04% wt) of the electron transport material TPA-3 CN; b) conductivity test patterns of the electron transport material TPA-3CN with different doping ratios (0%, 0.01%, 0.02%, 0.03%, 0.04% wt).
FIG. 3 is a scanning electron micrograph of a cross section of a perovskite solar cell with TPA-3CN as an electron transport material.
FIG. 4a) J-V plot of perovskite solar cells with different doping ratios (0%, 0.01%, 0.02%, 0.03%, 0.04% wt) of TPA-3CN as electron transport material; b) a positive and negative sweep J-V curve chart of the battery and a device structure schematic diagram under the condition that the optimal doping proportion is 0.03 wt%; c) the volt-ampere performance parameters of the perovskite solar cell with TPA-3CN with different doping ratios (0%, 0.01%, 0.02%, 0.03%, 0.04% wt) as the electron transport material.
FIG. 5 is a positive-negative scan J-V plot of a flexible perovskite solar cell with TPA-3CN as the electron transport material at an optimal doping ratio of 0.03% wt.
Detailed Description
The present invention is further described in the following examples in order to enable those skilled in the art to better understand the present invention, but the scope of the present invention is not limited to the following examples, and the scope of the present invention is defined by the claims.
Example 1:
a non-fullerene electron transport material has the chemical name: 4,4' -tri- (E) -3- [2- (2-cyano-acrylyl cyanide) -3-cyano) -5,5, -dimethyl-2, 3-dihydrofuran ] vinyl-triphenylamine, abbreviated as TPA-3CN, and the structural formula is shown in figure 1 a.
Secondly, a synthetic method of the non-fullerene electron transport material comprises the following steps:
dissolving tris (4-formylphenyl) amine (reactant 1, 987mg, 3mmol) and a furan derivative (reactant 2, 2.15g, 10.8mmol) in an anhydrous chloroform solution (50mL), adding 5 drops of triethylamine, stirring uniformly, heating to 61 ℃ for reaction for 24h, cooling to room temperature after the reaction is finished, adding 0.1M hydrochloric acid aqueous solution (60mL) into the reaction solution, adding dichloromethane solution (50mL) for extraction for 3 times, collecting an organic layer, drying the organic layer with anhydrous magnesium sulfate, filtering, removing the solvent under reduced pressure, separating and purifying the residue by silica gel column chromatography, and drying in vacuum to obtain an electron transport material TPA-3CN (1.78g, 75%).1H NMR(400MHz,Acetone),δ(ppm):δ8.05(d,J＝16.4Hz,3H),7.96(t,J＝7.0Hz,6H),7.31 (dd,J＝16.3,8.5Hz,9H),1.93(s,18H).13C NMR (400MHz, Acetone) delta 205.37,176.59,174.94,149.39,146.33,131.17,130.90,124.95,114.49,112.18,111.48,110.64, 99.28,98.78,55.45,54.10,29.01, 25.20 HR-MS (ESI) m/z calculated 872.2972; found 872.2978.
Thirdly, the perovskite solar cell taking TPA-3CN with different doping ratios as the electron transport material is prepared by the following steps:
(1) preparation of transparent conductive substrate: cutting a transparent conductive substrate FTO into 25mm multiplied by 25mm, etching the transparent conductive substrate FTO by using zinc powder and hydrochloric acid, sequentially placing the transparent conductive substrate FTO in deionized water, acetone and ethanol solution, ultrasonically cleaning for 15min, and then placing the transparent conductive substrate FTO in an ultraviolet ozone machine for processing for 15 min.
(2) Preparation of hole transport layer: NiO is selected as a hole transport layer, the specific operation is that a mixed solution (volume ratio is 95:5) of acetonitrile and acetone of 0.02M nickel acetylacetonate is sprayed on an FTO conductive substrate at 450 ℃ by adopting a spray pyrolysis method, and then annealing treatment is carried out, wherein the annealing temperature is 450 ℃ and the annealing time is 30 min;
(3) preparation of perovskite precursor liquid and preparation of perovskite absorption layer: reacting NH3CH3I and PbI2Mixed dissolved in dimethylformamide in a volume ratio of 4:1 at molar concentrations of 1.16 and 1.1: stirring the mixed solution of N, N-dimethyl sulfoxide at room temperature to fully dissolve the mixed solution to obtain CH3NH3PbI3The precursor solution of (1). The NiO film-coated substrate was placed on a spin coater and 75. mu.L of CH was added3NH3PbI3The precursor solution was dropped on the NiO thin film with the rotation number controlled to 1000rpm and the spin-coating time controlled to 10s, followed by the rotation number controlled to 5000rpm and the spin-coating time controlled to 30s, and 200 μ L of the antisolvent chlorobenzene was dropped in the process. Then placing on a heating plate for annealing treatment, wherein the annealing temperature is 100 ℃, and the annealing time is 30 min.
(4) Preparation of an electron transport layer: 20mg of an electron transport material TPA-3CN and 0%, 0.01%, 0.02%, 0.03%, 0.04% of a dopant H2 (structural formula shown in figure 1b) by mass fraction are dissolved in 1mL of chlorobenzene solution to prepare a TPA-3CN solution with no doping and doping proportion of 0.01%, 0.02%, 0.03%, 0.04% wt. The solution was then dropped onto the perovskite thin film for spin coating, the number of revolutions was controlled to 1800rpm, and the spin coating time was 30 s.
(5) Evaporation of the buffer layer and the metal cathode: BCP is selected as a buffer layer, and metal aluminum is used as a cathode.
(6) Transferring the substrate obtained in the step (5) into a thermal evaporation system, wherein the vacuum degree is less than or equal to 1 multiplied by 10-4Evaporating a BCP buffer layer under the Pa condition, wherein the thickness of the BCP buffer layer is 3 nm; the metal cathode aluminum was then evaporated under identical conditions, the cathode aluminum having a thickness of 200 nm.
And (5) operating in a glove box.
FIG. 2a) electron mobility test plots based on different doping ratios (0%, 0.01%, 0.02%, 0.03%, 0.04% wt) of the electron transport material TPA-3 CN; the abscissa is the bias voltage and the ordinate is the square root of the current density; b) the conductivity test plots of the electron transport material TPA-3CN with different doping ratios (0%, 0.01%, 0.02%, 0.03%, 0.04% wt) are shown by voltage on the coordinate and current on the ordinate. As can be seen from the figure, the electron transport material TPA-3CN has very good electron mobility and conductivity, and the highest electron mobility and conductivity are obtained at the electron transport material TPA-3CN with the doping ratio of 0.03% wt, so that the optimal doping ratio is 0.03% wt.
FIG. 3 is a scanning electron micrograph of a cross section of a perovskite solar cell with TPA-3CN as an electron transport material. The perovskite solar cell prepared in the embodiment 1 of the invention has a structure of glass/fluorine-doped tin oxide (FTO)/dense nickel oxide layer/perovskite absorption layer/electron transport layer (TPA-3CN)/BCP buffer layer/aluminum electrode.
Fig. 4a) J-V plot of perovskite solar cells with different doping ratios (0%, 0.01%, 0.02%, 0.03%, 0.04% wt) of TPA-3CN as electron transport material, voltage on abscissa and current density on ordinate; b) a positive and negative scanning J-V curve chart of the battery and a device structure schematic diagram under the condition that the optimal doping proportion is 0.03 wt%, wherein the abscissa is voltage, and the ordinate is current density; c) the volt-ampere performance parameters of the perovskite solar cell with TPA-3CN with different doping ratios (0%, 0.01%, 0.02%, 0.03%, 0.04% wt) as the electron transport material. As can be seen from the figure, the highest photoelectric conversion efficiency of 19.2% (V) is obtained by the perovskite solar cell taking TPA-3CN with the doping ratio of 0.03 wt% as the electron transport materialOC＝1.05 V,JSC＝22.5mA/cm2FF 81.1) and almost no relaxation phenomenon. Therefore, the perovskite solar cell based on the TPA-3CN electron transport material has excellent photoelectric properties.
Example 2:
a non-fullerene electron transport material has the chemical name: 4,4' -tri- (E) -3- [2- (2-cyano-acrylyl cyanide) -3-cyano) -5,5, -dimethyl-2, 3-dihydrofuran ] vinyl-triphenylamine, abbreviated as TPA-3CN, and the structural formula is shown in figure 1 a.
Secondly, a synthetic method of the non-fullerene electron transport material comprises the following steps:
tris (4-formylphenyl) amine (reactant 1, 987mg, 3mmol) and furan derivative (reactant 2, 716mg, 3.6mmol) were dissolved in acetonitrile (50mL)Adding 5 drops of triethylamine, stirring uniformly, heating to 82 ℃ for reaction for 36h, cooling to room temperature after the reaction is finished, adding 0.2M hydrochloric acid aqueous solution (60mL) into the reaction solution, adding dichloromethane solution (50mL) for extraction for 3 times, collecting an organic layer, drying the organic layer by anhydrous magnesium sulfate, filtering, and removing the solvent under reduced pressure. The residue was separated and purified by silica gel column chromatography and dried in vacuo to give TPA-3CN (1.78g, 75%) as an electron transport material.1H NMR (400MHz,Acetone),δ(ppm):δ8.05(d,J＝16.4Hz,3H),7.96(t,J＝7.0Hz,6H),7.31(dd,J＝ 16.3,8.5Hz,9H),1.93(s,18H).13C NMR (400MHz, Acetone) delta 205.37,176.59,174.94,149.39, 146.33,131.17,130.90,124.95,114.49,112.18,111.48,110.64,99.28,98.78,55.45,54.10,29.01, 25.20 HR-MS (ESI) m/z calculated 872.2972; found 872.2978.
Thirdly, the flexible perovskite solar cell based on the TPA-3CN electron transport material with the doping proportion of 0.03 percent is prepared by the following steps:
(1) preparation of transparent conductive substrate: cutting a transparent conductive substrate ITO-polyethylene terephthalate (PET) into 25mm multiplied by 25mm, etching the transparent conductive substrate ITO-polyethylene terephthalate (PET) by using zinc powder and hydrochloric acid, sequentially placing the transparent conductive substrate ITO-polyethylene terephthalate (PET) in deionized water, acetone and ethanol solution, ultrasonically cleaning for 15min, and then placing the transparent conductive substrate ITO-polyethylene terephthalate (PET) in an ultraviolet ozone machine for processing for 15 min.
(2) Preparation of hole transport layer: selecting PEDOT PSS as a hole transport layer, specifically, spin-coating 150 μ L of PEDOT PSS solution on an ITO-PET conductive substrate by using a spin-coating method, controlling the rotation speed to be 2000rpm, and the spin-coating time to be 60s, and then carrying out annealing treatment, wherein the annealing temperature is 120 ℃, and the annealing time is 60 min.
(3) Preparation of perovskite precursor liquid and preparation of perovskite absorption layer: reacting NH3CH3I and PbI2Mixed dissolved in dimethylformamide in a volume ratio of 4:1 at molar concentrations of 1.16 and 1.1: stirring the mixed solution of N, N-dimethyl sulfoxide at room temperature to fully dissolve the mixed solution to obtain CH3NH3PbI3The precursor solution of (1). Will be seeded with PEDOT: the substrate of the PSS film was placed on a spin coater and 75. mu.L of CH was applied3NH3PbI3The precursor solution is dripped into PEDOT: on the PSS film, the rotation speed was controlled to 1000rpm, the spin-coating time was 10s, and subsequently the rotation speed was controlled to 5000rpm, the spin-coating time was 30s, and 200. mu.L of an antisolvent chlorobenzene was added dropwise during this process. Then placing on a heating plate for annealing treatment, wherein the annealing temperature is 100 ℃, and the annealing time is 30 min.
(4) Preparation of an electron transport layer: 20mg of an electron transport material TPA-3CN and a dopant H2 with the mass fraction of 0.03 percent are dissolved in 1mL of chlorobenzene solution to prepare a TPA-3CN solution with the doping proportion of 0.03 percent. The solution was then dropped onto the perovskite thin film for spin coating, the number of revolutions was controlled to 1800rpm, and the spin coating time was 30 s.
(5) Evaporation of the buffer layer and the metal cathode: BCP is selected as a buffer layer, and metal aluminum is used as a cathode.
(6) Transferring the substrate obtained in the step (5) into a thermal evaporation system, wherein the vacuum degree is less than or equal to 1 multiplied by 10-4Evaporating a BCP buffer layer under the Pa condition, wherein the thickness of the BCP buffer layer is 3 nm; the metal cathode aluminum was then evaporated under identical conditions, the cathode aluminum having a thickness of 200 nm.
And (5) operating in a glove box.
FIG. 5 is a plot of the positive and negative swept J-V curves of a flexible perovskite solar cell with TPA-3CN as the electron transport material at an optimum doping ratio of 0.03% wt, with voltage on the abscissa and current density on the ordinate. As seen from the figure, the flexible perovskite solar cell is prepared by adopting TPA-3CN with the doping proportion of 0.03 percent as an electron transport material, and finally the photoelectric conversion efficiency of 13.2 percent is obtained, which indicates that the material can be successfully applied to the flexible perovskite solar cell.
Claims (9)
1. A non-fullerene electron transport material characterized by the chemical name: 4,4' -tris- (E) -3- [2- (2-cyanopropenylcyano) -3-cyano) -5,5, -dimethyl-2, 3-dihydrofuran ] vinyl-triphenylamine, abbreviated as TPA-3CN, and having the structural formula:
2. the method of synthesizing a non-fullerene electron transport material according to claim 1, comprising the steps of:
dissolving tri (4-formylphenyl) amine and a reactant 2 in an organic solvent, adding triethylamine, uniformly stirring, and carrying out heating reflux reaction; cooling to room temperature after the reaction is finished, adding a hydrochloric acid aqueous solution into the reaction liquid to adjust the pH of the reaction liquid to be neutral, adding a dichloromethane solution for extraction, collecting an organic layer, drying the organic layer by adopting anhydrous magnesium sulfate, filtering, removing the solvent under reduced pressure, separating, purifying and drying in vacuum to obtain an electron transport material TPA-3 CN;
the structural formula of the reactant 2 is as follows:
3. the method of claim 2, wherein the molar ratio of tris (4-formylphenyl) amine to reactant 2 is 1: 3.6; the reaction concentration is 0.03-0.06 mol/L and 0.108-0.216 mol/L respectively); the addition amount of triethylamine is 3-5 drops; the concentration of the hydrochloric acid aqueous solution is 0.1-0.2M.
4. The method of claim 2, wherein the organic solvent is anhydrous chloroform, acetonitrile or tetrahydrofuran.
5. The method as claimed in claim 2, wherein the temperature of the heating reflux reaction is 61-82 deg.C for 24-36 h.
6. A trans-planar perovskite solar cell comprising an electron transport layer, wherein the electron transport layer comprises the non-fullerene electron transport material of claim 1.
7. The method of fabricating a trans-planar perovskite solar cell according to claim 6, comprising the steps of:
(1) preparation of transparent conductive substrate: cutting a transparent conductive substrate into a fixed size, etching the conductive substrate by using zinc powder and hydrochloric acid, sequentially placing the conductive substrate in deionized water, acetone and ethanol solution, ultrasonically cleaning for 15min, and then placing the conductive substrate in an ultraviolet ozone machine for treatment for 15 min;
(2) preparation of hole transport layer: forming a hole transport layer on the transparent conductive substrate treated in the step (1);
(3) preparation of perovskite precursor liquid and preparation of perovskite absorption layer: reacting NH3CH3I and PbI2、PbCl2Or PbBr2Mixing and dissolving the mixture in a molar ratio of 3: 1-1: 1 in a mixed solution of dimethylformamide and N, N-dimethyl sulfoxide in a volume ratio of 4:1, and stirring the mixture at room temperature to obtain CH3NH3PbI3、CH3NH3PbI3-xBrxOr CH3NH3PbI3-xClxThe perovskite precursor liquid of (a); then spin-coating the perovskite precursor solution on the hole transport layer to form a perovskite absorption layer;
(4) preparation of an electron transport layer: preparing chlorobenzene solution of a non-fullerene electron transport material TPA-3CN, dropwise adding the solution on the perovskite absorption layer for spin coating, and controlling the revolution number to be 1800rpm and the spin coating time to be 30s to form an electron transport layer;
(5) preparing a buffer layer: preparing a buffer layer on the electron transmission layer by using an evaporation or spin coating method;
(6) evaporation of metal cathode: transferring the substrate obtained in the step (5) into a thermal evaporation system, wherein the vacuum degree is less than or equal to 1 multiplied by 10-4And (3) evaporating a metal cathode under the Pa condition.
8. The method according to claim 7, wherein in step (4), the non-fullerene electron transport material TPA-3CN in chlorobenzene solution further comprises an N-type dopant 2- (2, 6-dimethoxyphenyl) -1, 3-dimethyl-benzimidazole.
9. The method of manufacturing a trans-planar perovskite solar cell according to claim 8, wherein the N-type dopant 2- (2, 6-dimethoxyphenyl) -1, 3-dimethyl-benzimidazole is used in an amount of 0.01 to 0.04% based on the TPA-3 CN.
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