CN106757325A - A kind of 8 inches of monolithic high temperature silicon carbide epitaxial growth cell structures - Google Patents
A kind of 8 inches of monolithic high temperature silicon carbide epitaxial growth cell structures Download PDFInfo
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- CN106757325A CN106757325A CN201611191849.7A CN201611191849A CN106757325A CN 106757325 A CN106757325 A CN 106757325A CN 201611191849 A CN201611191849 A CN 201611191849A CN 106757325 A CN106757325 A CN 106757325A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention discloses a kind of 8 inches of monolithic high temperature silicon carbide epitaxial growth cell structures to be included：Epitaxial chamber, it is made up of induction-heatable material, a rectangular chamber is formed with the epitaxial chamber, and the epitaxial chamber is provided with bearing groove in rectangular chamber, the pallet for load SiC wafer 8 inches is carried by the bearing groove, the epitaxial chamber both sides are respectively arranged with air inlet and the gas outlet of insertion rectangular chamber；One hard heat-insulated layer, its tight is incubated in the periphery of described epitaxial chamber with to epitaxial chamber, and reduces the heat radiation of epitaxial chamber；One Airway adaptor, it is located at the air inlet of epitaxial chamber, and is stretched out in outside hard heat-insulated layer；One for guiding reacting gas that the upstream wireway of state was laminar before epitaxial chamber is entered, and it is socketed on Airway adaptor；The one downstream wireway for being used to guide tail gas discharge, it is located at the gas outlet of epitaxial chamber, and is stretched out in outside hard heat-insulated layer.
Description
Technical field：
The present invention relates to manufacture silicon carbide epitaxy chip high-temperature service technical field, a kind of 8 inches of monolithic high temperatures are refered in particular to
Silicon carbide epitaxial growth cell structure.
Background technology：
Carborundum (SiC) epitaxial growth has turned into a key technology of SiC power semiconductor manufactures in broad stopband of new generation,
Large area, high-quality SiC epitaxial materials are to prepare high-performance, the basis of low cost S iC power devices.
With the fast development of SiC crystal technology, SiC wafer size is expanding to be dominated to current by past 2-4 inches
6 inches, it is even more important that II-VI companies of the U.S. and Cree companies demonstrated 8 inches of SiC wafers respectively at 2015.Though
So current SiC epitaxial wafer product size is based on 6 inches, but more large scale is the inexorable trend of SiC epitaxy technologies development,
It is also the need for further reducing SiC power semiconductor manufacturing costs.In order to lead SiC wafer developing direction, Germany
Infineon companies are with 8.5 hundred million US dollars of Wolfspeed companies purchased under U.S.'s Cree house flags, it is believed that successfully close from now on
Key is by wafer diameter expansion to 200mm (8 inches).Infineon can quickly propel 200mmization by purchase, future, so as to
Further reduce SiC power semiconductor manufacturing costs.
Mainly there are three SiC epitaxial devices suppliers in the world, they are respectively German Aixtron companies, Italy LPE
Company and TEL companies of Japan, its epitaxial device is respectively 6 inches of multi-discs of stainless steel (6 and 8) " warm wall " system, horizontal
Three " hot wall " systems of 6 inches of monolithic " hot wall " systems of quartz ampoule and horizontal quartz ampoule 6 inch, first two equipment all can not
Carry out 8 inches of SiC epitaxial growths.Although the third equipment can carry out 8 inches of SiC epitaxial growths, quartz ampoule has easy
It is broken, not easy processing the characteristics of, and the equipment quotation is sufficiently expensive.
SiC semiconductor mainly for the manufacture of high voltage power device so that thicker SiC epitaxial layer thickness, " hot wall "
System is large scale, the capital equipment of high-quality SiC epitaxial wafer Material growth.So-called " hot wall " refers to SiC substrate chip four
The temperature in week is identical, whereas if be less than chip temperature with the temperature of chip opposite side, then the system be referred to as " cold wall " or
" warm wall ".
Often to be carried out in view of difficulty and defect that above-mentioned three SiC epitaxial devices are present, and SiC epitaxial chambers
The superiority of cleaning treatment and monolithic system, the present inventor proposes following technical scheme.
The content of the invention：
It is an object of the invention to overcome the deficiencies in the prior art, there is provided a kind of 8 inches of monolithic high temperature silicon carbide epitaxies life
Cell structure long.
In order to solve the above-mentioned technical problem, present invention employs following technical proposals：Outside 8 inches of monolithic high temperature carborundum
Epitaxial growth cell structure includes：Epitaxial chamber, it is made up of induction-heatable material, and a rectangular cavity is formed with the epitaxial chamber
Room, and the epitaxial chamber is provided with bearing groove in rectangular chamber, by the bearing groove carry for load SiC wafer 8
The pallet of inch, the epitaxial chamber both sides are respectively arranged with air inlet and the gas outlet of insertion rectangular chamber；One is hard heat-insulated
Layer, its tight is incubated in the periphery of described epitaxial chamber with to epitaxial chamber, and reduces the heat of epitaxial chamber
Radiation；One Airway adaptor, it is located at the air inlet of epitaxial chamber, and is stretched out in outside hard heat-insulated layer；One is used to draw
The upstream wireway that reacting gas was laminar state before epitaxial chamber is entered is led, it is socketed on Airway adaptor；
The one downstream wireway for being used to guide tail gas discharge, it is located at the gas outlet of epitaxial chamber, and stretches out in hard heat-insulated layer
Outward.
Furthermore, in above-mentioned technical proposal, the epitaxial chamber it include upper lid that induction-heatable material is made,
Chassis, left plate and right plate, the left plate and right plate are respectively arranged at the lid and bottom disk left and right sides, and surround before and after one
Penetrating described rectangular chamber, and the described gas outlet of insertion rectangular chamber is respectively arranged with the left plate and right plate
And air inlet.
Furthermore, in above-mentioned technical proposal, the upper lid is rectangular, and lid is internally provided with the first rectangular cavity on this
Road, and its surrounding wall thickness is equal.
Furthermore, in above-mentioned technical proposal, the structure and shape and size size on the chassis are suitable with upper lid,
And the chassis and upper lid are to be symmetrical arranged.
Furthermore, in above-mentioned technical proposal, chassis both sides upper end is provided with the first draw-in groove；The upper lid two
Side lower end is provided with the second draw-in groove, and first draw-in groove and the second draw-in groove engage the upper and lower ends of left plate and right plate respectively.
Furthermore, in above-mentioned technical proposal, described upstream wireway is rectangular, and the upstream wireway has second
Rectangle cavity, the cross sectional shape and area of the second rectangle cavity and the cross sectional shape of rectangular chamber in the epitaxial chamber and
Area all same.
Furthermore, in above-mentioned technical proposal, described downstream wireway is rectangular, and the downstream wireway has the 3rd
Rectangle cavity, the area of section of the area of section more than rectangular chamber in the epitaxial chamber of the 3rd rectangle cavity.
Furthermore, in above-mentioned technical proposal, the Airway adaptor rear and front end forms first, second respectively
Interface, the first interface is docked with the air inlet of the epitaxial chamber, and the second interface is docked with upstream wireway, and this is led
The 4th rectangle cavity, cross sectional shape and area and the epitaxial chamber of the 4th rectangle cavity are formed with air tube connector
The cross sectional shape and area all same of middle rectangular chamber.
Furthermore, in above-mentioned technical proposal, the left plate and right plate are rectangle lath, and its shape and
Size is identical.
Furthermore, in above-mentioned technical proposal, the air inlet of the hard heat-insulated layer correspondence epitaxial chamber and
First, second through hole is respectively arranged with gas outlet, the size of the first through hole is less than the size of air inlet, second through hole
Size of the size less than gas outlet.
After adopting the above technical scheme, the present invention has the advantages that compared with prior art：
1st, due to epitaxial chamber in upper lid and chassis it is rectangular, and with rectangle cavity, and its surrounding wall thickness
Equal, the epitaxial chamber of this structure is especially beneficial raising sensing heating efficiency, eliminates epitaxial chamber internal cause loose contact
And the part " focus " that is formed and lid and the temperature homogeneity on chassis on improving, and the epitaxial chamber is after being heated, with
This ensures that temperature is identical, i.e., the temperature in rectangular chamber is uniform, reaches " hot wall " effect, makes the present invention be suitable for large area, height
Quality SiC epitaxial growths, are particularly suitable for high pressure, the growth of extra high tension power device SiC thick epitaxial layers.
2nd, the present invention has " hot wall " effect, is suitable for large area, high-quality SiC epitaxial growths, is particularly suitable for
The growth of SiC thick epitaxial layers of high pressure, extra high tension power device.
3rd, epitaxial growth cell structure of the present invention installs simple, easily carries out cleaning treatment, more convenient to use.
4th, the present invention is widely used, and may not only be applied to 8 inches of monolithic SiC epitaxial growths, and only by replacing pallet, also
Can be used for 6 inches of monolithic SiC epitaxial growths and 2 and/or 34 inches of SiC epitaxial growths.
Brief description of the drawings：
Fig. 1 is structural representation of the invention；
Fig. 2 is sectional view of the invention；
Fig. 3 is the sectional view of upper lid in the present invention；
Fig. 4 is the sectional view on chassis in the present invention；
Fig. 5 is the installation diagram of chassis and pallet (8 inches) in the present invention；
Fig. 6 is the installation diagram of chassis and pallet (6 inches) in the present invention；
Fig. 7 is the installation diagram of chassis and pallet (4 inches) in the present invention；
Fig. 8 is the sectional view of hard heat-insulated layer in the present invention；
Fig. 9 is the sectional view in hard heat-insulated another section of layer in the present invention；
Figure 10 is the structural representation of left plate in the present invention；
Figure 11 is the structural representation of middle and upper reaches end of the present invention wireway；
Figure 12 is the structural representation of middle and lower reaches end of the present invention wireway；
Figure 13 is the structural representation of Airway adaptor in the present invention；
Figure 14 is the sectional view of Airway adaptor in the present invention.
Description of reference numerals：
The bearing groove of 10 epitaxial chamber, 100 rectangular chamber 101
The gas outlet of 102 pallet, 103 air inlet 104
The draw-in groove of 11 first rectangle cavity of lid 12 second on 1
The left plate of 2 21 first draw-in groove of chassis 3
The first through hole of 45 hard heat-insulated layer of right plate 51
The first interface of 52 second through hole, 6 Airway adaptor 61
The upstream wireway of 62 the 4th rectangle cavity of second interface 63 7
The rectangle cavity of 71 second rectangle cavity, 8 downstream wireway 81 the 3rd
Specific embodiment：
With reference to specific embodiments and the drawings, the present invention is further described.
It is a kind of 8 inches of monolithic high temperature silicon carbide epitaxial growth cell structures as shown in Fig. 1-14, it includes：Epitaxial growth
Room 10 and tight are incubated and for reducing epitaxial chamber in the periphery of epitaxial chamber 10 with to epitaxial chamber 10
The hard heat-insulated layer 5 of 10 heat radiation and the Airway adaptor 6 being installed in epitaxial chamber 10, downstream wireway 8 and set
It is connected to the upstream wireway 7 on Airway adaptor 6.
The epitaxial chamber 10 is made up of induction-heatable material, and a rectangular chamber is formed with the epitaxial chamber 10
100, and the epitaxial chamber 10 is provided with bearing groove 101 in rectangular chamber 100, is carried for filling by the bearing groove 101
8 inches of SiC wafer of pallet 102 is carried, the both sides of epitaxial chamber 10 are respectively arranged with the air inlet of insertion rectangular chamber 100
103 and gas outlet 104；Specifically, the epitaxial chamber 10 it include upper lid 1, chassis 2 that induction-heatable material is made,
Left plate 3 and right plate 4, the left plate 3 and right plate 4 are respectively arranged at lid 1 and the left and right sides of chassis 2, and before surrounding one
Penetrating described rectangular chamber 100 afterwards, and the institute of insertion rectangular chamber 100 is respectively arranged with the left plate 3 and right plate 4
The gas outlet 104 stated and air inlet 103；The bearing groove 101 is arranged at the upper surface of chassis 2.
The pallet 102 may not only be applied to 8 inches of monolithic SiC epitaxial growths, and only by replacing the support of other size
Disk, it may also be used for 6 inches of monolithic SiC epitaxial growths and 2 and/or 34 inches of SiC epitaxial growths, the order present invention is for more
Plus it is convenient.
The upper lid 1 is rectangular, and lid 1 is internally provided with the first rectangle cavity 11 on this, and its surrounding wall thickness is equal.With
It is corresponding, with upper lid 1 quite, this is no longer going to repeat them, and the bottom for the structure and shape and size size on the chassis 2
Disk 2 and upper lid 1 are to be symmetrical arranged.
Because upper lid 1 and chassis 2 are rectangular, and with rectangle cavity, and its surrounding wall thickness is equal, this structure
Epitaxial chamber is especially beneficial and improves sensing heating efficiency, eliminates the part " heat formed by loose contact in epitaxial chamber
The temperature homogeneity on lid and chassis on point " and improvement, and the epitaxial chamber ensures that temperature is identical after being heated with this,
Temperature i.e. in rectangular chamber 100 is uniform, reaches " hot wall " effect, makes the present invention be suitable for large area, high-quality SiC extensions and gives birth to
It is long, it is particularly suitable for high pressure, the growth of extra high tension power device SiC thick epitaxial layers.
The present invention is suitable for large area, high-quality SiC epitaxial growths, is particularly suitable for high pressure, extra high tension power device
The part growth of SiC thick epitaxial layers.
The both sides upper end of the chassis 2 is provided with the first draw-in groove 21；The both sides lower end of the upper lid 1 is provided with the second draw-in groove
12, the draw-in groove 12 of the first draw-in groove 21 and second engages the upper and lower ends of left plate 3 and right plate 4 respectively, ensures whole outer with this
The stability of the structure of epitaxial growth room 10, and assemble simpler.
The left plate 3 and right plate 4 are rectangle lath, and its shape and size is identical.
The tight of hard heat-insulated layer 5 is protected in the periphery of described epitaxial chamber 10 with to epitaxial chamber 10
Temperature, and reduce the heat radiation of epitaxial chamber 10；Wherein, the air inlet of the correspondence of hard heat-insulated layer 5 epitaxial chamber 10
First, second through hole 51,52 is respectively arranged with mouth 103 and gas outlet 104, the size of the first through hole 51 is less than air inlet
103 size, the size of second through hole 52 less than gas outlet 104 size, with cause first, second through hole respectively with lead
Air tube connector 6 and the periphery of downstream wireway 8 are in close contact, it is ensured that sealing property, to improve heat insulation effect.
The periphery of hard heat-insulated layer 5 is also socketed with a shell.The Airway adaptor 6 is located at epitaxial chamber 10
At air inlet 103, and stretch out in outside hard heat-insulated layer 5；Wherein, the rear and front end of the Airway adaptor 6 forms respectively
First, second interface 61,62, the first interface 61 is docked with the air inlet 103 of the epitaxial chamber 10, the second interface 62 with
Upstream wireway 7 is docked, and be formed with the 4th rectangle cavity 63 in the Airway adaptor 6, and the 4th rectangle cavity 63 cuts
The cross sectional shape and area all same of face shape and area and rectangular chamber 100 in the epitaxial chamber 10.
The upstream wireway 7 is socketed on Airway adaptor 6, and it is used to guide reacting gas entering epitaxial growth
State is laminar before room 10；Wherein, described upstream wireway 7 is rectangular, and the upstream wireway 7 has the second rectangle cavity
71, the cross sectional shape and area of the second rectangle cavity 71 and the cross sectional shape of rectangular chamber 100 in the epitaxial chamber 10
And area all same.
The downstream wireway 8 is stretched out in outside hard heat-insulated layer 5 at the gas outlet 104 of epitaxial chamber 10, should
Downstream wireway 8 is used to guide tail gas to discharge.Wherein, described downstream wireway 8 is rectangular, and the downstream wireway 8 has the
Three rectangle cavities 81, the area of section of the 3rd rectangle cavity 81 cuts more than rectangular chamber 100 in the epitaxial chamber 10
Face area.
When the present invention is used, SiC wafer is placed on pallet, and pallet 102 is positioned over the carrying of epitaxial chamber 10
In groove 101, reacting gas is flowed into from upstream wireway, by the rectangular cavity after Airway adaptor into epitaxial chamber
In room 100, make reacting gas that laminar condition was presented before epitaxial chamber is entered, growing environment is ensured with this.Certain
Under the conditions of high growth temperature, reacting gas chemically reacts in rectangular chamber 100, by spreading, adsorbing, decompose, be desorbed, again
A series of processes such as diffusion, the growth of SiC epitaxial layer is carried out on the SiC wafer surface in pallet 102, and tail gas is led through downstream
Tracheae is discharged, and by the certain growth time, completes SiC epitaxial growths.
Certainly, the foregoing is only specific embodiment of the invention, not limit the scope of the present invention, it is all according to
The equivalent change or modification that construction, feature and principle described in scope of the present invention patent are done, all should be included in Shen of the present invention
Please be in the scope of the claims.
Claims (10)
1. a kind of 8 inches of monolithic high temperature silicon carbide epitaxial growth cell structures, it is characterised in that：It includes：
Epitaxial chamber (10), it is made up of induction-heatable material, and a rectangular chamber is formed with the epitaxial chamber (10)
(100), and the epitaxial chamber (10) is provided with bearing groove (101) in rectangular chamber (100), by the bearing groove (101)
The pallet (102) for load SiC wafer 8 inches is carried, epitaxial chamber (10) both sides are respectively arranged with insertion rectangle
The air inlet (103) of chamber (100) and gas outlet (104)；
One hard heat-insulated layer (5), its tight in the periphery of described epitaxial chamber (10), with to epitaxial chamber (10)
Insulation, and reduce the heat radiation of epitaxial chamber (10)；
One Airway adaptor (6), air inlet (103) place that it is located at epitaxial chamber (10), and stretch out in hard heat-insulated layer
(5) outward；
One is used to guide reacting gas being laminar the upstream wireway (7) of state, its set before into epitaxial chamber (10)
It is connected on Airway adaptor (6)；
The one downstream wireway (8) for being used to guide tail gas discharge, gas outlet (104) place that it is located at epitaxial chamber (10), and
Stretch out in hard heat-insulated layer (5) outward.
2. a kind of 8 inches of monolithic high temperatures silicon carbide epitaxial growth cell structure according to claim 1, it is characterised in that：Institute
It includes upper lid (1), chassis (2), left plate (3) and right plate (4) that induction-heatable material is made to state epitaxial chamber (10),
The left plate (3) and right plate (4) are respectively arranged at lid (1) and chassis (2) left and right sides, and surround institute penetrating before and after
The described of insertion rectangular chamber (100) is respectively arranged with the rectangular chamber (100) stated, and the left plate (3) and right plate (4)
Gas outlet (104) and air inlet (103).
3. a kind of 8 inches of monolithic high temperatures silicon carbide epitaxial growth cell structure according to claim 2, it is characterised in that：Institute
State lid (1) rectangular, lid (1) is internally provided with the first rectangle cavity (11) on this, and its surrounding wall thickness is equal.
4. a kind of 8 inches of monolithic high temperatures silicon carbide epitaxial growth cell structure according to claim 3, it is characterised in that：Institute
The structure and shape and size size on chassis (2) are stated with upper lid (1) quite, and the chassis (2) and upper lid (1) are symmetrically to set
Put.
5. a kind of 8 inches of monolithic high temperatures silicon carbide epitaxial growth cell structure according to claim 1, it is characterised in that：Institute
State chassis (2) both sides upper end and be provided with the first draw-in groove (21)；Upper lid (1) the both sides lower end is provided with the second draw-in groove
(12), first draw-in groove (21) and the second draw-in groove (12) engage the upper and lower ends of left plate (3) and right plate (4) respectively.
6. a kind of 8 inches of monolithic high temperatures silicon carbide epitaxial growth cell structure according to claim 1, it is characterised in that：Institute
The upstream wireway (7) stated is rectangular, the upstream wireway (7) with the second rectangle cavity (71), the second rectangle cavity
(71) cross sectional shape and area is homogeneous with the cross sectional shape and area of rectangular chamber (100) in the epitaxial chamber (10)
Together.
7. a kind of 8 inches of monolithic high temperatures silicon carbide epitaxial growth cell structure according to claim 1, it is characterised in that：Institute
The downstream wireway (8) stated is rectangular, and the downstream wireway (8) is with the 3rd rectangle cavity (81), the 3rd rectangle cavity
(81) area of section of the area of section more than rectangular chamber (100) in the epitaxial chamber (10).
8. a kind of 8 inches of monolithic high temperatures silicon carbide epitaxial growth cell structure according to claim 1, it is characterised in that：Institute
State Airway adaptor (6) rear and front end and form first, second interface (61,62) respectively, the first interface (61) with it is described
Air inlet (103) docking of epitaxial chamber (10), the second interface (62) is docked with upstream wireway (7), and the wireway
The 4th rectangle cavity (63) is formed with connector (6), the cross sectional shape and area of the 4th rectangle cavity (63) are outer with described
The cross sectional shape and area all same of rectangular chamber (100) in epitaxial growth room (10).
9. a kind of 8 inches of monolithic high temperatures silicon carbide epitaxial growth cell structure according to claim 2, it is characterised in that：Institute
State left plate (3) and right plate (4) is rectangle lath, and its shape and size is identical.
10. a kind of 8 inches of monolithic high temperatures silicon carbide epitaxial growth cell structure according to claim 2, it is characterised in that：Institute
The air inlet (103) and gas outlet (104) place for stating hard heat-insulated layer (5) the correspondence epitaxial chamber (10) are respectively arranged with the
First, the second through hole, the size of the size less than air inlet (103) of the first through hole, the size of second through hole is less than gas outlet
(104) size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611191849.7A CN106757325A (en) | 2016-12-21 | 2016-12-21 | A kind of 8 inches of monolithic high temperature silicon carbide epitaxial growth cell structures |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611191849.7A CN106757325A (en) | 2016-12-21 | 2016-12-21 | A kind of 8 inches of monolithic high temperature silicon carbide epitaxial growth cell structures |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101591803A (en) * | 2008-05-28 | 2009-12-02 | 中国科学院半导体研究所 | A kind of high-temperature carborundum double-chamber hot wall type epitaxial growth device |
| CN102560431A (en) * | 2010-12-21 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Metal organic chemical vapor deposition device and chamber assembly thereof |
| CN102747418A (en) * | 2012-07-25 | 2012-10-24 | 东莞市天域半导体科技有限公司 | High-temperature large area silicon carbide epitaxial growth device and treatment method |
| CN203159741U (en) * | 2012-12-24 | 2013-08-28 | 刘祥林 | Hydride vapour phase epitaxy equipment |
| CN104561927A (en) * | 2013-10-12 | 2015-04-29 | 刘祥林 | Hot wall metal-organic chemical vapor deposition device |
| CN206553653U (en) * | 2016-12-21 | 2017-10-13 | 东莞市天域半导体科技有限公司 | A kind of 8 inches of monolithic high temperature silicon carbide epitaxial growth cell structures |
-
2016
- 2016-12-21 CN CN201611191849.7A patent/CN106757325A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101591803A (en) * | 2008-05-28 | 2009-12-02 | 中国科学院半导体研究所 | A kind of high-temperature carborundum double-chamber hot wall type epitaxial growth device |
| CN102560431A (en) * | 2010-12-21 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Metal organic chemical vapor deposition device and chamber assembly thereof |
| CN102747418A (en) * | 2012-07-25 | 2012-10-24 | 东莞市天域半导体科技有限公司 | High-temperature large area silicon carbide epitaxial growth device and treatment method |
| CN203159741U (en) * | 2012-12-24 | 2013-08-28 | 刘祥林 | Hydride vapour phase epitaxy equipment |
| CN104561927A (en) * | 2013-10-12 | 2015-04-29 | 刘祥林 | Hot wall metal-organic chemical vapor deposition device |
| CN206553653U (en) * | 2016-12-21 | 2017-10-13 | 东莞市天域半导体科技有限公司 | A kind of 8 inches of monolithic high temperature silicon carbide epitaxial growth cell structures |
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Application publication date: 20170531 |