CN106757308B - A kind of single crystal growing furnace takes stick auxiliary device - Google Patents
A kind of single crystal growing furnace takes stick auxiliary device Download PDFInfo
- Publication number
- CN106757308B CN106757308B CN201510819048.XA CN201510819048A CN106757308B CN 106757308 B CN106757308 B CN 106757308B CN 201510819048 A CN201510819048 A CN 201510819048A CN 106757308 B CN106757308 B CN 106757308B
- Authority
- CN
- China
- Prior art keywords
- circle
- monocrystalline
- inner ring
- ring type
- outer ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of single crystal growing furnaces to take stick auxiliary device, including outer ring-like circle, inner ring type circle and monocrystalline hanging basket, wherein outer ring-like circle and inner ring type circle are made of two semicircular rings respectively, outer ring-like circle is coupled between inner ring type circle by several coupling bars；It constitutes and is bolted between two semicircular rings of outer ring-like circle；The lower end of outer ring-like circle is along the circumferential direction equipped with groove；Fluting is along the circumferential direction equipped on the inside of the upper end of inner ring type circle；Monocrystalline hanging basket is made of multiple monocrystalline lantern rings and Duo Gen hanging belt, and multiple monocrystalline lantern rings are connected with each other by more hanging belts, longitudinal arrangement；Monocrystalline lantern ring positioned at the top is arranged on the fluting of the inner ring type circle, and the monocrystalline lantern ring positioned at bottom is scalable circle.Monocrystal rod is taken by device, monocrystal rod is fallen directly into can fall into damage of the furnace to the components such as graphite crucible or CFC crucible to avoid monocrystalline in device, while can reduce the labor intensity that operator takes stick, prevent from taking the possible personal injury of rod motion and damaged products.
Description
Technical field
The present invention relates to a kind of single crystal growing furnaces to take stick auxiliary device, for taking stick in straight pulling silicon single crystal furnace.
Background technique
The line width of present integrated circuit has entered nanometer era, the bigger silicon wafer of diameter, the integrated circuit that can be scribed
More, the cost of chip is also lower, as domestic and international market is to the quick of major diameter single crystal silicon wafer demand and size
Increase, the market demand of silicon single crystal rod is also in the trend of rapid growth.Monocrystalline silicon piece develops to existing from initial 6 inches, 8 inches
12 inches (300 millimeters) so that 18 inches (450 millimeters), silicon single crystal rod is not the raw material for producing monocrystalline silicon piece, therefore not
By being that also to silicon single crystal rod size, more stringent requirements are proposed for the development of silicon wafer in technology or cost.
Monocrystalline silicon presses the difference of growing method, is divided into vertical pulling method (CZ), zone-melting process (FZ) and epitaxy.Vertical pulling method is raw
Long monocrystalline silicon is mainly used for semiconductor integrated circuit, diode, epitaxial wafer substrate, solar battery, at present the half of about 85%
Conductor silicon single crystal body uses vertical pulling method.Polysilicon is put into silica crucible in the method, then heating fusing omits molten silicon
It does and cools down, give certain degree of supercooling, the silicon single crystal body (referred to as seed crystal) of a particular crystal orientation is contacted with melt silicon, passes through tune
The upward pull rate of temperature and seed crystal of whole melt makes seed crystal form thin neck and grows certain length at high speeds, reduces crystal and mention
Pulling rate degree and melt temperature make crystal grow up to close-target diameter, then improve pull rate and make the closely permanent growth in thickness of monocrystal.?
In the latter stage of growth course, the silicon melt in crucible not yet completely disappears at this time, by increase crystal promotion speed and adjust to
Crystal diameter is reduced gradually and forms a tail shape cone by the heating load of crucible, and when the point of cone is sufficiently small, crystal will
It is detached from melt, to complete the growth course of crystal, obtains a silicon single crystal rod.
In order to reduce cost, many factories are all using increase thermal field size, the method for increasing charge.Such as 16 inches of heat
Field charging can achieve 60kg, and the charging of 20 inch thermal fields can be more than 100kg, and the charging of 28 inch thermal fields reaches 250KG, 32 English
Very little thermal field charging may even exceed 350kg.With the increase of thermal field, the increase of charge, the diameter and weight of monocrystalline are also got over
Come bigger.It is original to take single-crystal techniques there is also certain limitations, such as monocrystalline tail portion is fallen into furnace, bigger diameter, again
Amount will cause personnel's operating difficulties, also can (especially big thermal field generallys use height to components such as current used graphite crucibles
Value light basis weight material such as carbon/carbon composite material crucible) it causes to damage；Original hydraulic monocrystalline mechanical arm can not also be operated.
Therefore, it is very significant for how fast and safely realizing that monocrystalline takes clubs work.
Summary of the invention
The purpose of the present invention is to provide a kind of single crystal growing furnaces to take stick auxiliary device, special for taking stick in straight pulling silicon single crystal furnace
It is not large size single crystal stick.
To achieve the above object, the invention adopts the following technical scheme:
A kind of single crystal growing furnace takes stick auxiliary device, including outer ring-like circle, inner ring type circle and monocrystalline hanging basket, wherein outer ring-like circle and
Inner ring type circle is made of two semicircular rings respectively, and outer ring-like circle is coupled between inner ring type circle by several coupling bars；It constitutes outer
It is bolted between two semicircular rings of ring-like circle；
The lower end of outer ring-like circle is along the circumferential direction equipped with groove, which is used to outer ring-like enclose being stuck in the outer of monocrystalline furnace tube
Along upper；Fluting is along the circumferential direction equipped on the inside of the upper end of inner ring type circle；
Monocrystalline hanging basket is made of multiple monocrystalline lantern rings and Duo Gen hanging belt, and multiple monocrystalline lantern rings are mutual by more hanging belts
Connection, longitudinal arrangement；Monocrystalline lantern ring positioned at the top is arranged on the fluting of the inner ring type circle, positioned at the monocrystalline of bottom
Lantern ring is scalable circle.
Preferably, the scalable circle is made of hanging belt and movable buckle, and the diameter of the scalable circle is according to monocrystalline
The setting of tail portion middle section diameter.
Preferably, the diameter of the lantern ring of monocrystalline hanging basket the top is greater than the internal diameter of the inner ring type circle, is less than described
The outer diameter of fluting, to guarantee that monocrystalline lantern ring is fallen on the fluting of inner ring type circle without sliding.
The inner ring type circle, outer ring-like circle, coupling bar, monocrystalline lantern ring material be stainless steel or iron；The monocrystalline lantern ring
Surface coat high-temperature resistant rubber；The material of the hanging belt is synthetic fibers.
The present invention has the advantages that
The present invention takes stick (especially large size single crystal stick) for straight pulling silicon single crystal furnace, monocrystal rod can be fallen directly into device
It is interior, the hanging basket in device is taken out together together with monocrystalline by overhead traveling crane, and be placed in monocrystalline car.Monocrystal rod is taken by the device
When, it can be fallen into avoid monocrystalline in furnace and the graphite members such as graphite crucible or CFC crucible (carbon/carbon composite material crucible) are caused to damage,
The labor intensity that operator takes stick can also be reduced simultaneously, prevents from taking the possible personal injury of rod motion and damaged products.
Detailed description of the invention
Fig. 1 is the structural schematic diagram after single crystal growing furnace of the invention takes stick auxiliary device to assemble.
Fig. 2 is the top view after single crystal growing furnace of the invention takes the inside and outside ring-like circle in stick auxiliary device to assemble.
Fig. 3 is the sectional view in Fig. 2 along A-A.
Fig. 4 is the structural schematic diagram that single crystal growing furnace of the invention takes the monocrystalline hanging basket in stick auxiliary device.
Fig. 5 is that single crystal growing furnace of the present invention auxiliary takes bar device to be mounted on the schematic diagram in crystal for straight drawing monocrystal furnace system.
Specific embodiment
Below in conjunction with attached drawing, the invention will be further described, but the present invention is not limited thereto.
As shown in Fig. 2, it includes outer ring-like circle 3, inner ring type circle 4 and monocrystalline hanging basket that single crystal growing furnace of the invention, which takes stick auxiliary device,
1, wherein the annular ring 2 that outer ring-like circle 3 and inner ring type circle 4 form is made of two semicircular rings respectively, outer ring-like circle 3 and inner ring type
Coupled between circle 4 by several coupling bars 5.It constitutes and is connected between two semicircular rings of outer ring-like circle by bolt 6.
As shown in figure 3, the lower end of outer ring-like circle 3 is along the circumferential direction equipped with groove 8, which is used to for outer ring-like circle being stuck in
On the outer of monocrystalline furnace tube；Fluting 7 is equipped on the inside of the upper end of inner ring type circle 4.
Monocrystalline hanging basket 1 is made of multiple monocrystalline lantern rings and Duo Gen hanging belt, and the quantity of monocrystalline lantern ring and hanging belt can root
It is selected according to actual needs.As shown in figure 4, monocrystalline hanging basket 1 is by four 9,12 groups of 10,11,13,14 and Duo Gen of monocrystalline lantern ring hanging belts
At.Multiple monocrystalline lantern rings 10,11,13,14 is connected by four double-deck hanging belts 12 respectively, and the monocrystalline lantern ring 14 of bottom is
Scalable circle is formed by another hanging belt and movable buckle 15, which leads to
It crosses, monocrystalline tail portion can be fallen into wherein.The diameter of the monocrystalline lantern ring 10 of the top is greater than the internal diameter of inner ring type circle 4, and is less than fluting 7
Outer diameter, must between the internal diameter and outer diameter of the groove of inner ring type circle, i.e., guarantee monocrystalline lantern ring 10 can fall in inner ring type circle
It is unlikely to slide on fluting.
It can be seen that the fluting 7 on inner ring type circle 4 is used to carry the monocrystalline lantern ring 10 of monocrystalline hanging basket the top, therefore, only
Guarantee that monocrystalline lantern ring 10 is not fallen off, 7 shape of slotting can arbitrarily be selected premised on this.
Taken in stick auxiliary device in single crystal growing furnace of the invention, inner ring type circle, outer ring-like circle, coupling bar, monocrystalline lantern ring material
Matter is stainless steel or iron, is coated with high-temperature resistant rubber on the surface of monocrystalline lantern ring and pollutes to avoid monocrystalline contact metal, shadow
Ring product quality；The material of hanging belt is synthetic fibers.
When the device being used for single crystal growing furnace taking stick, monocrystal rod is first increased to furnace tube above the horizontal plane, outer ring will be constituted
Two semicircular rings of type circle 3 and annular circle 4 are placed in furnace tube, so that the groove 8 of outer ring-like circle 3 is stuck on furnace tube outer, so
It is by bolt 6 that two semicircular ring connections are locked afterwards.As shown in Figure 1, the monocrystalline lantern ring 10 of monocrystalline hanging basket 1 is placed in inner ring type circle
Groove 7 on, the bottom of monocrystalline lantern ring it is scalable circle according to monocrystalline tail portion middle section diameter set, monocrystalline is slowly fallen into monocrystalline
In hanging basket 1.Then two hanging belts 9 that hanging basket is connected by overhead traveling crane, the hanging basket in device is taken out together with monocrystalline, and puts
It is placed in monocrystalline car.
It falls into furnace compared to original monocrystalline using the mechanical method taken out, when taking monocrystal rod by the device, monocrystalline
Stick falls directly into device and no longer falls into can fall into damage of the furnace to the graphite members such as graphite crucible or CFC crucible to avoid monocrystalline in furnace,
The labor intensity that operator takes stick can be reduced simultaneously, prevents from taking the possible personal injury of rod motion and damaged products.Phase
Than monocrystalline to be fallen in the method taken on stick trolley compared to rotation furnace chamber in monocrystalline, monocrystal rod is taken to avoid single crystal growing furnace by the device
Since seed crystal transverse strength is lower when upper furnace chamber rotates, the personal injury and production of seed crystal fracture and generation may occur in operation
Product loss.
Rod taking device of single crystal furnace of the invention takes the heavy weight monocrystalline of stick, especially large scale for straight pulling silicon single crystal furnace
Stick can be applied to single crystal diameter in 200mm to 500mm, and monocrystal rod weight can reach 500kg.
Claims (3)
1. a kind of single crystal growing furnace takes stick auxiliary device, which is characterized in that including outer ring-like circle, inner ring type circle and monocrystalline hanging basket, wherein
Outer ring-like circle and inner ring type circle are made of two semicircular rings respectively, are joined between outer ring-like circle and inner ring type circle by several coupling bars
It connects；It constitutes and is bolted between two semicircular rings of outer ring-like circle；
The lower end of outer ring-like circle is along the circumferential direction equipped with groove, which is used to for outer ring-like circle being stuck in the outer of monocrystalline furnace tube
On；Fluting is along the circumferential direction equipped on the inside of the upper end of inner ring type circle；
Monocrystalline hanging basket is made of multiple monocrystalline lantern rings and Duo Gen hanging belt, and multiple monocrystalline lantern rings are mutually interconnected by more hanging belts
It connects, longitudinal arrangement；Monocrystalline lantern ring positioned at the top is arranged on the fluting of the inner ring type circle, positioned at the monocrystalline set of bottom
Ring is scalable circle；
The diameter of the lantern ring of monocrystalline hanging basket the top is greater than the internal diameter of the inner ring type circle, less than the outer diameter of the fluting.
2. single crystal growing furnace according to claim 1 takes stick auxiliary device, which is characterized in that it is described it is scalable circle by hanging belt with
Movable buckle is constituted, and the diameter of the scalable circle is set according to monocrystalline tail portion middle section diameter.
3. single crystal growing furnace according to claim 1 takes stick auxiliary device, which is characterized in that the inner ring type circle, it is outer it is ring-like circle,
Coupling bar, monocrystalline lantern ring material be stainless steel or iron；The surface of the monocrystalline lantern ring coats high-temperature resistant rubber；The hanging belt
Material be synthetic fibers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510819048.XA CN106757308B (en) | 2015-11-23 | 2015-11-23 | A kind of single crystal growing furnace takes stick auxiliary device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510819048.XA CN106757308B (en) | 2015-11-23 | 2015-11-23 | A kind of single crystal growing furnace takes stick auxiliary device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106757308A CN106757308A (en) | 2017-05-31 |
| CN106757308B true CN106757308B (en) | 2019-06-18 |
Family
ID=58962987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510819048.XA Active CN106757308B (en) | 2015-11-23 | 2015-11-23 | A kind of single crystal growing furnace takes stick auxiliary device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106757308B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114635182A (en) * | 2022-03-30 | 2022-06-17 | 福建福晶科技股份有限公司 | Crystal production and lifting device and method convenient for discharging crystals |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201713599U (en) * | 2010-06-25 | 2011-01-19 | 上海汉虹精密机械有限公司 | Extensible crystal bar bracket |
| CN201942780U (en) * | 2010-12-18 | 2011-08-24 | 江阴市华英光伏科技有限公司 | Straight-pull single-crystal furnace crystal bar bracket |
| CN202849589U (en) * | 2012-09-21 | 2013-04-03 | 特变电工新疆新能源股份有限公司 | Single crystal furnace device |
| CN103233265A (en) * | 2013-04-18 | 2013-08-07 | 中国恩菲工程技术有限公司 | Single crystal rod hoisting device |
-
2015
- 2015-11-23 CN CN201510819048.XA patent/CN106757308B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201713599U (en) * | 2010-06-25 | 2011-01-19 | 上海汉虹精密机械有限公司 | Extensible crystal bar bracket |
| CN201942780U (en) * | 2010-12-18 | 2011-08-24 | 江阴市华英光伏科技有限公司 | Straight-pull single-crystal furnace crystal bar bracket |
| CN202849589U (en) * | 2012-09-21 | 2013-04-03 | 特变电工新疆新能源股份有限公司 | Single crystal furnace device |
| CN103233265A (en) * | 2013-04-18 | 2013-08-07 | 中国恩菲工程技术有限公司 | Single crystal rod hoisting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106757308A (en) | 2017-05-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110195256A (en) | Monocrystalline silicon repeatedly feeds the device continuously grown and technique | |
| CN105603520A (en) | High-speed single crystal growth device and method | |
| CN103510157A (en) | Induced crystal growth technology for efficient ingot casting | |
| CN109338462A (en) | A kind of pulling of crystals variable diameter seed crystal and seeding methods | |
| CN106757308B (en) | A kind of single crystal growing furnace takes stick auxiliary device | |
| CN102758244A (en) | Compound heating-type Czochralski polycrystalline silicon or monocrystal silicon preparation technology | |
| Li et al. | Recycling of silicon scraps by electron beam melting coupled with directional solidification and its mechanism of impurity removal | |
| CN101698960B (en) | Material supplementing method and material supplementing device for pulling of crystals | |
| CN204982128U (en) | Increase draft tube of single crystal growing furnace inventory | |
| CN102296358A (en) | Combination method for carbon material combined crucible, and combined crucible thereof | |
| CN102758245A (en) | Deoxidizing type single crystal furnace | |
| CN203295664U (en) | Continuous feeding device used for independently heating double crucibles grown with sapphire crystal dynamic temperature method | |
| CN101748483A (en) | Germanium melt dross removing device and method | |
| WO2016037506A1 (en) | Four-section type combined crucible made from carbon material | |
| CN204874813U (en) | A thermal shielding device for monocrystalline silicon is grown | |
| CN107010629A (en) | A kind of method that electronic torch melting purifies monocrystalline flavoring food | |
| Dold | Silicon crystallization technologies | |
| CN110528074A (en) | A kind of monocrystalline silicon refines production technology and its purifier | |
| CN102817071A (en) | Preparation technology of heat radiation resistant Czochralski polysilicon or monocrystalline silicon | |
| CN207244047U (en) | A kind of high density sapphire crystal quick process units of high purity aluminium oxide crystal block | |
| Lan et al. | Czochralski silicon crystal growth for photovoltaic applications | |
| CN202450185U (en) | Multifunctional crystal bar taking vehicle for single crystal furnace | |
| CN103374747A (en) | Method for preparing zone-melting silicon materials by using zone continuous casting process | |
| CN202090097U (en) | Carbon/carbon composite combined crucible | |
| CN205907390U (en) | Many crucibles liquid phase epitaxy siC crystal bear device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |