CN106746730A - A kind of method for strengthening the resistance to tempering performance of low radiation coated glass - Google Patents
A kind of method for strengthening the resistance to tempering performance of low radiation coated glass Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3618—Coatings of type glass/inorganic compound/other inorganic layers, at least one layer being metallic
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3626—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing a nitride, oxynitride, boronitride or carbonitride
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3644—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the metal being silver
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
- C03C17/366—Low-emissivity or solar control coatings
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
- C03C2218/156—Deposition methods from the vapour phase by sputtering by magnetron sputtering
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- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
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- Organic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of method for strengthening the resistance to tempering performance of low radiation coated glass, wherein during glass preparation, magnetic control plating sets many using argon gas ratio when deposition underlying silicon nitride layer and middle nitride silicon layer, the few argon gas nitrogen mixed gas of nitrogen ratios are used as reacting gas, it is less using argon gas ratio when magnetic control plating sets deposited top layer silicon nitride layer, nitrogen ratios argon gas nitrogen mixed gas higher are used as reacting gas, improve the stress distribution situation in each film layer, so that the resistance to tempering performance of the film layer of the double silver-layer low-radiation glass products for obtaining has being substantially improved, remain able to stand intact by face after prolonged heating.
Description
Technical field
The present invention relates to a kind of method for strengthening the resistance to tempering performance of low radiation coated glass.
Background technology
Low emissivity glass also known as Low-e glass, in the prior art, can tempering Low-e films take is glass " after first plated film
The technological process of tempering ", compared with traditional glass " plated film after first tempering " technological process, with plated film efficiency high, low cost,
Can strange land processing etc. many advantages, its concrete technology be also industry research and development focus.
What offline Low-e glass was taken is large area magnetron sputtering technology, and this membrane material of silicon nitride is due to having
The advantages of antiacid caustic corrosion is strong, mechanical resistant is scratched, be highly suitable as can tempering Low-e dielectric layer material, can be used for directly
With the bottom dielectric layer of glass contact, and middle part dielectric layer and top protection layer, can obtain a large amount of in tempering Low-e membrane systems
Application.
What this membrane material of silicon nitride was taken in Low-e glass applications is with sial（Si:Al=90:10）Cylindric rotation
Target is target, argon gas and nitrogen as process gas, midfrequent AC reactive magnetromsputtering deposition, existing technology controlling and process side
Method is：No matter silicon nitride film be applied to can the bottom dielectric layer of tempering Low-e, middle part dielectric layer or top dielectric layer, its argon
The flow proportional of gas and nitrogen is changeless, and the thickness of film layer is controlled only by increase or reduction sputtering power,
The chemical composition ratio of the silicon nitride film for that is preparing, optical constant n/k values, consistency and internal stress are substantially one
Cause.In order to pursue coated film deposition rate higher, it is higher than nitrogen ratios typically all to choose argon gas ratio, and this is easy for causing deposition
Film layer structure is finer and close, accumulation internal stress is increasing, easily occur film layer after tempering local because thermal stress is excessive
The film layer segregation phenomenon for causing, the resistance to tempering performance for showing as Low-e films is not good.In actual production process, often occur
Have after tempering stain, oxidization time is short for exposure, after tempering film layer aerobicization phenomenon.
The content of the invention
Shortcoming the invention aims to overcome prior art, there is provided one kind is resistance to for strengthening low radiation coated glass
The method of tempering performance.
To reach above-mentioned purpose, the technical solution adopted by the present invention is：One kind is for strengthening the resistance to steel of low radiation coated glass
The method for changing performance, the low radiation coated glass includes glass basis and the bottom that plating is located on the glass basis surface successively
Layer silicon nitride layer, the first composite film, middle nitride silicon layer, the second composite film, top layer silicon nitride layer, described in magnetron sputtering
When underlying silicon nitride layer, middle nitride silicon layer and the top layer silicon nitride layer, it is 90 to use sial mass ratio:10 sial target
As target, and using the mixed gas of argon gas and nitrogen as reacting gas, wherein, nitrogenized in bottom described in magnetron sputtering deposition
During silicon layer, argon gas and the flow-rate ratio of nitrogen are Ar in reacting gas：N2=1.5：1~1.1：1；In described in magnetron sputtering deposition
Between silicon nitride layer when, the flow-rate ratio of argon gas and nitrogen is Ar in reacting gas：N2=1.5：1~1.1：1；In magnetron sputtering deposition
During the top layer silicon nitride layer, argon gas and the flow-rate ratio of nitrogen are Ar in reacting gas：N2=1：1~1：2.
Preferably, when plating sets the underlying silicon nitride layer with middle nitride silicon layer, argon gas and nitrogen in reacting gas
Flow-rate ratio is consistent.
Further, when plating sets the underlying silicon nitride layer with middle nitride silicon layer, argon gas and nitrogen in reacting gas
Flow value be consistent.
Preferably, in underlying silicon nitride layer, middle nitride silicon layer and the top layer silicon nitride layer described in magnetron sputtering deposition
When, the flow of the argon gas is 200~1500sccm.
Preferably, first composite film includes the first medium layer, the first functional layer, that are outwards stacked successively
One barrier layer and middle dielectric layer, the second composite film include outwards be stacked successively second dielectric layer, the second functional layer,
Second barrier layer and top dielectric layer.
Further, first composite film is outwards laminated successively by ZnO/Ag/NiCrOx/ZnSnOx.
Further, second composite film is outwards laminated successively by ZnO/Ag/NiCrOx/AZO.
Due to the utilization of above-mentioned technical proposal, the present invention has following advantages compared with prior art：One kind of the invention
Method for strengthening the resistance to tempering performance of low radiation coated glass, wherein during glass preparation, magnetic control plating sets deposition bottom
Using the argon-nitrogen mixed gas that argon gas ratio is more, nitrogen ratios are few as anti-when layer silicon nitride layer and middle nitride silicon layer
Gas is answered, it is mixed using the argon-nitrogen that argon gas ratio is less, nitrogen ratios are higher when magnetic control plating sets deposited top layer silicon nitride layer
Gas is closed as reacting gas, improves the stress distribution situation in each film layer so that double silver-layer low-radiation glass products of acquisition
The resistance to tempering performance of film layer has and is substantially improved, and remains able to stand intact by face after prolonged heating.
Brief description of the drawings
Accompanying drawing 1 is the structural representation of the low radiation coated glass of the specific embodiment of the invention.
Specific embodiment
Technical scheme is further elaborated with specific embodiment below in conjunction with the accompanying drawings.
Low radiation coated glass of the present invention, including glass basis 10 and plating are located on the surface of glass basis 10
Multiple film layers, at least three layers silicon nitride film layer in the plurality of film layer, respectively：The bottom being in contact with the surface of glass basis 10
Layer silicon nitride layer 1, the outermost top layer silicon nitride layer 5 in all film layers, and positioned at underlying silicon nitride layer 1 and top layer nitrogen
Middle nitride silicon layer 3 between SiClx layer 5.The first composite film 2 is provided between underlying silicon nitride layer 1 and middle nitride silicon layer 3,
The second composite film 4 is provided between middle nitride silicon layer 3 and top layer silicon nitride layer 5.
First composite film 2 includes that the 21, first functional layer of first medium layer 22, first being outwards stacked successively hinders
Barrier 23 and middle dielectric layer 24, the second composite film 4 include the second dielectric layer 41, the second function that are outwards stacked successively
The 42, second barrier layer 43 of layer and top dielectric layer 44.Wherein, the first functional layer 22 and the second functional layer 42 are silver layer.
When the low radiation coated glass is prepared, by each film layer of the 1, first composite film 2 of above-mentioned underlying silicon nitride layer,
Middle nitride silicon layer 3, each film layer of the second composite film 4, top layer silicon nitride layer 5 sequentially pass sequentially through magnetron sputtering and sink
Product is on the surface of glass basis 10.
It is equal in magnetron sputtering underlying silicon nitride layer 1, middle nitride silicon layer 3, this three layers of silicon nitride layers of top layer silicon nitride layer 5
It is Si to use sial mass ratio：Al=90:10 sial target as target, and using the mixed gas of argon gas and nitrogen as reaction
Gas.In the vacuum magnetic-control sputtering operation of above three silicon nitride layer 3, argon gas is different from the flow proportional of nitrogen.
Specifically, in magnetron sputtering deposition underlying silicon nitride layer 1, the flow-ratio control of argon gas and nitrogen in reacting gas
It is Ar：N2=1.5：1~1.1：1.So, for the underlying silicon nitride layer 1 for directly being contacted with glass basis 10, using argon gas ratio
The example few process control method of many, nitrogen ratios, the refractive index of the silicon nitride film of deposition is high, film layer structure is fine and close and inside is rich in
Micro Si free bonds, can effectively stop the aqueous vapor of glass surface attachment and the alkali metal of inside glass in toughening process
Ion transfer enters Low-e film layers, and the bottom dielectric layer of high index of refraction can improve the transmitance and heat of whole Low-e film layers
Work performance.
In magnetron sputtering deposition middle nitride silicon layer 3, argon gas and the flow-rate ratio of nitrogen are Ar in reacting gas：N2=
1.5：1~1.1：1, that is, for the middle nitride silicon layer 3, still take the technology controlling and process that argon gas ratio is more, nitrogen ratios are few
Method, the O that can play a part of to be rich in isolation oxide dielectric layer in toughening process invades Ag layers of functional layer.Specifically,
In this stage process the flow-rate ratio of argon gas and nitrogen can with magnetron sputtering underlying silicon nitride layer 1 when be consistent, the stage argon gas
Flow value and nitrogen flow value also can with magnetron sputtering underlying silicon nitride layer 1 when be consistent.
In magnetron sputtering deposition top layer silicon nitride layer 5, argon gas and the flow-rate ratio of nitrogen are Ar in reacting gas：N2=1：1
~1：2.For top layer silicon nitride layer 5, then using the process control method that argon gas ratio is less, nitrogen ratios are higher, deposition
Silicon nitride film has internal stress small, it is to avoid because thermal stress it is excessive caused by that film layer is oxidizable, resistance to tempering performance is not enough is weak
Point, moreover, top surface roughness is low, smooth, friction resistant performance is good.
In each silicon nitride layer of above-mentioned magnetron sputtering deposition, the flow of argon gas is 200~1500sccm, specifically should be according to plating
The size of film device determined, the flow of nitrogen flow and argon gas then according to argon gas is controlled with the corresponding discharge ratio of nitrogen
System, nitrogen is filled with the vacuum chamber of filming equipment and is sufficiently mixed simultaneously with argon gas, and nitrogen in vacuum chamber is monitored in process
The flow and ratio value of gas and argon gas.
It is explained below in conjunction with specific embodiment：
Embodiment 1
It is the film layer structure schematic diagram of glass in the present embodiment shown in ginseng Fig. 1.
In the present embodiment, the film layer for setting is plated on glass basis 10 and is followed successively by：SiNx/ZnO/Ag/NiCrOx/ZnSnOx/
SiNx/ZnO/Ag/NiCrOx/AZO/SiNx, the thickness of glass substrate is 6mm.Will in vacuum magnetron sputtering coating film equipment
SiNx/ZnO/Ag/NiCrOx/ZnSnOx/SiNx/ZnO/Ag/NiCrOx/AZO/SiNx is plated and set to glass successively according to sequencing
On the surface of glass matrix 10.Note：X is the constant more than 0.
Wherein, when plating sets three layers of silicon nitride layer, using following parameter and technique：
Underlying silicon nitride layer SiNx magnetron sputtering deposition technology controlling and process be：
Glass walking speed：5m/min；Power：90kw；Argon flow amount：800sccm；Nitrogen flow 540sccm.
Demarcate the optical constant n/k values of the silicon nitride film deposited under the argon nitrogen flow proportional：Refraction at 550nm after measured
Rate n values are that 2.3, k values are 1.2 × 10-6。
The magnetron sputtering deposition technology controlling and process of middle nitride silicon layer SiNx is：
Glass walking speed：5m/min；Power：70kw；Argon flow amount：800sccm；Nitrogen flow 540sccm.
Demarcate the optical constant n/k values of the silicon nitride film deposited under the argon nitrogen flow proportional：Refraction at 550nm after measured
Rate n values are that 2.25, k values are 1.05 × 10-6。
The magnetron sputtering deposition technology controlling and process of top layer silicon nitride layer SiNx is：
Glass walking speed：5m/min；Power：60kw；Argon flow amount：800sccm；Nitrogen flow 1400sccm.
Demarcate the optical constant n/k values of the silicon nitride film deposited under the argon nitrogen flow proportional：Refraction at 550nm after measured
Rate n values are that 2.0, k values are 0.
Tested through tempering, above-mentioned 6mm it is thick can the double silver glass of tempering after more long than the normal heating time 10%, its film layer
Surface still stands intact.
And plated film processing is carried out to above-mentioned pair of silver-layer low-radiation glass using prior art, for underlying silicon nitride layer, centre
In the magnetron sputtering deposition operation of silicon nitride layer and top layer silicon nitride layer these three film layers, argon gas and nitrogen in reacting gas
Ratio and flow are consistent, and argon gas ratio is small, nitrogen ratios are big；And the plating of other film layers set technological parameter with this Shen
Please in be consistent to be tested.After measured, at underlying silicon nitride layer 550nm, at middle nitride silicon layer 550nm, top layer
Refractive index n values at silicon nitride layer 550nm are 2.0, k values and are also 0.The glass product obtained by above-mentioned technique is through just
After normal time heating, its film layer just has slight oxidation phenomenon；And after more long than the normal heating time 10%, the surface of its film layer
Complete oxidation.
Therefore, using process control method of the invention after, it is prepared can tempered and low-radiation glass resistance to tempering
Performance has and is substantially improved.
Embodiment 2
The glass that the present embodiment is directed to is also adopted by the identical film layer structure of embodiment 1, when plating sets three layers of silicon nitride layer, using such as
Under parameter and technique：
Underlying silicon nitride layer SiNx magnetron sputtering deposition technology controlling and process be：
Glass walking speed：5m/min；Power：90kw；Argon flow amount：900sccm；Nitrogen flow 780sccm.
Demarcate the optical constant n/k values of the silicon nitride film deposited under the argon nitrogen flow proportional：Refraction at 550nm after measured
Rate n values are that 2.5, k values are 1.6 × 10-6。
The magnetron sputtering deposition technology controlling and process of middle nitride silicon layer SiNx is：
Glass walking speed：5m/min；Power：70kw；Argon flow amount：900sccm；Nitrogen flow 780sccm.
Demarcate the optical constant n/k values of the silicon nitride film deposited under the argon nitrogen flow proportional：Refraction at 550nm after measured
Rate n values are that 2.4, k values are 1.25 × 10-6。
The magnetron sputtering deposition technology controlling and process of top layer silicon nitride layer SiNx is：
Glass walking speed：5m/min；Power：60kw；Argon flow amount：900sccm；Nitrogen flow 1400sccm.
Demarcate the optical constant n/k values of the silicon nitride film deposited under the argon nitrogen flow proportional：Refraction at 550nm after measured
Rate n values are that 1.98, k values are 0.
Tested through tempering, above-mentioned 6mm it is thick can the double silver glass of tempering after more long than the normal heating time 10%, its film layer
Surface still stands intact.
Embodiment 3
The glass that the present embodiment is directed to still uses the identical film layer structure of embodiment 1, when plating sets three layers of silicon nitride layer, uses
Following parameter and technique：
Underlying silicon nitride layer SiNx magnetron sputtering deposition technology controlling and process be：
Glass walking speed：5m/min；Power：90kw；Argon flow amount：700sccm；Nitrogen flow 540sccm.
Demarcate the optical constant n/k values of the silicon nitride film deposited under the argon nitrogen flow proportional：Refraction at 550nm after measured
Rate n values are that 2.2, k values are 1.5 × 10-6。
The magnetron sputtering deposition technology controlling and process of middle nitride silicon layer SiNx is：
Glass walking speed：5m/min；Power：70kw；Argon flow amount：700sccm；Nitrogen flow 540sccm.
Demarcate the optical constant n/k values of the silicon nitride film deposited under the argon nitrogen flow proportional：Refraction at 550nm after measured
Rate n values are that 2.1, k values are 1.15 × 10-6。
The magnetron sputtering deposition technology controlling and process of top layer silicon nitride layer SiNx is：
Glass walking speed：5m/min；Power：60kw；Argon flow amount：900sccm；Nitrogen flow 900sccm.
Demarcate the optical constant n/k values of the silicon nitride film deposited under the argon nitrogen flow proportional：Refraction at 550nm after measured
Rate n values are that 2.03, k values are 0.
Tested through tempering, above-mentioned 6mm it is thick can the double silver glass of tempering after more long than the normal heating time 10%, its film layer
Surface still stands intact.
The above embodiments merely illustrate the technical concept and features of the present invention, its object is to allow person skilled in the art's energy
Solution present disclosure much of that is simultaneously carried out, and it is not intended to limit the scope of the present invention, all according to spirit of the invention
The equivalent change or modification that essence is made, should all cover within the scope of the present invention.
Claims (7)
1. a kind of method for strengthening the resistance to tempering performance of low radiation coated glass, the low radiation coated glass includes glass base
Body and successively plating are located at underlying silicon nitride layer, the first composite film, middle nitride silicon layer, second on the glass basis surface
Composite film, top layer silicon nitride layer, it is characterised in that：In underlying silicon nitride layer, middle nitride silicon layer and institute described in magnetron sputtering
When stating top layer silicon nitride layer, it is 90 to use sial mass ratio:10 sial target as target, and with the mixing of argon gas and nitrogen
Gas as reacting gas,
Wherein, in underlying silicon nitride layer described in magnetron sputtering deposition, argon gas and the flow-rate ratio of nitrogen are Ar in reacting gas：N2=
1.5：1~1.1：1；In middle nitride silicon layer described in magnetron sputtering deposition, argon gas is with the flow-rate ratio of nitrogen in reacting gas
Ar：N2=1.5：1~1.1：1；In top layer silicon nitride layer described in magnetron sputtering deposition, the stream of argon gas and nitrogen in reacting gas
Amount is than being Ar：N2=1：1~1：2.
2. the method for strengthening the resistance to tempering performance of low radiation coated glass according to claim 1, it is characterised in that：
When plating sets the underlying silicon nitride layer with middle nitride silicon layer, argon gas is consistent with the flow-rate ratio of nitrogen in reacting gas.
3. the method for strengthening the resistance to tempering performance of low radiation coated glass according to claim 2, it is characterised in that：
When plating sets the underlying silicon nitride layer with middle nitride silicon layer, argon gas is consistent with the flow value of nitrogen in reacting gas.
4. the method for strengthening the resistance to tempering performance of low radiation coated glass according to claim 1, it is characterised in that：
Described in magnetron sputtering deposition when underlying silicon nitride layer, middle nitride silicon layer and the top layer silicon nitride layer, the flow of the argon gas
It is 200~1500sccm.
5. according to any described method for strengthening the resistance to tempering performance of low radiation coated glass of Claims 1-4, its feature
It is：First composite film include outwards be stacked successively first medium layer, the first functional layer, the first barrier layer and
Middle dielectric layer, the second composite film includes the second dielectric layer, the second functional layer, the second barrier layer that are outwards stacked successively
And top dielectric layer.
6. the method for strengthening the resistance to tempering performance of low radiation coated glass according to claim 5, it is characterised in that：Institute
The first composite film is stated outwards to be laminated successively by ZnO/Ag/NiCrOx/ZnSnOx.
7. the method for strengthening the resistance to tempering performance of low radiation coated glass according to claim 5, it is characterised in that：Institute
The second composite film is stated outwards to be laminated successively by ZnO/Ag/NiCrOx/AZO.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112321171A (en) * | 2020-11-04 | 2021-02-05 | 威海中玻新材料技术研发有限公司 | Online low-emissivity coated glass and preparation method thereof |
| CN115849731A (en) * | 2021-09-26 | 2023-03-28 | 河北勒克斯光学薄膜技术有限公司 | Temperable glass mirror and preparation method thereof |
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| CN115849731A (en) * | 2021-09-26 | 2023-03-28 | 河北勒克斯光学薄膜技术有限公司 | Temperable glass mirror and preparation method thereof |
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Application publication date: 20170531 |