CN106744640A - Micro-hotplate and its processing method with step-like structure and vacuum cavity - Google Patents
Micro-hotplate and its processing method with step-like structure and vacuum cavity Download PDFInfo
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- CN106744640A CN106744640A CN201710126277.2A CN201710126277A CN106744640A CN 106744640 A CN106744640 A CN 106744640A CN 201710126277 A CN201710126277 A CN 201710126277A CN 106744640 A CN106744640 A CN 106744640A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
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- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
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Abstract
The invention discloses a kind of micro-hotplate with step-like structure and vacuum cavity and its processing method, the micro-hotplate includes：First substrate, with back to first surface and second surface, first thermal insulation layer, insulating barrier, step-like structure layer, zone of heating and passivation layer are disposed with the first surface, the zone of heating is electrically connected with electrode；Second substrate, with the 3rd surface, second thermal insulation layer is provided with the 3rd surface；Also, the second surface of at least described first substrate is combined with the 3rd face seal of second substrate and is made to be formed between first substrate and the second substrate an at least vacuum cavity, and insulation is coated with the wall of the vacuum cavity.The micro-hotplate has structural stability good, the low advantage of operating power consumption.The invention also discloses the processing method of the micro-hotplate, the processing method is simply easily implemented, and controllability is good.
Description
Technical field
The present invention relates to a kind of micro-hotplate, more particularly to a kind of micro-hotplate with step-like structure and vacuum cavity and its
Processing method.
Background technology
At present, existing micro-hotplate has the shortcomings that sensitive membrane stress is big, thermal insulation is poor and high high-temp stability is undesirable,
Constrain micro- heating arrangement sensor such as micro element such as micro-gas sensors, microcalorimeter, micromanometer and micro-acceleration gauge
Deng development and application.
With the development that the technology of modern microelectronic is with rapid changepl. never-ending changes and improvements, small size, low-power consumption and easily with other materials or device
The micro-hotplate of combination is increasingly taken seriously, but it is unstable with device using micro- heating plate certain thermal power to be brought to be lost
Property.
In the prior art, to reduce heat power consumption, realize structural thermal insulation generally using the insulated tank of hanging structure.Micro-hotplate is general
It is all over the structure for using：Layer of silicon dioxide (SiO is deposited in the upper surface of substrate2) or silicon nitride (SiN) film layer as insulation
Layer, insulated tank is prepared in the lower surface of substrate base.One layer of silicon nitride layer is deposited again on heater strip surface as passivation layer.Example
The technique that the processing method of such as silicon substrate micro-hotplate that CN104541161A is disclosed just employs insulated tank.But this method erosion
Zone of heating after insulated tank is carved only to be supported by the silicon nitride layer of thin film structure, and the film only at two ends by support substrate branch
Support, the Stress Control of this membrane structure is more poor, and insufficient strength, easily occurs when device is given a shock or collides
Rupture causes component failure.In addition, cavity is antivacuum, and insulation effect is undesirable, not only influences the performance of device, same to go back
It is easily caused component failure.
To sum up, at least there is problems with the hanging structure of micro-hotplate of the prior art：(1) stability is poor, due to quick
Sense membrane stress control is bad to be easily deformed rupture, causes component failure；(2) effect of heat insulation is poor, the airspace between insulated tank compared with
It is big to cause heat to scatter and disappear comparatively fast, influence effect of heat insulation.
The content of the invention
It is a primary object of the present invention to provide a kind of micro-hotplate with step-like structure and vacuum cavity and its processing
Method, to overcome the deficiencies in the prior art.
To realize aforementioned invention purpose, the technical solution adopted by the present invention includes：
A kind of micro-hotplate with step-like structure and low vacuum cavity is the embodiment of the invention provides, it includes：
First substrate, with first surface and with first surface back to second surface, on the first surface successively
First thermal insulation layer, insulating barrier, step-like structure layer, zone of heating and passivation layer are provided with, the zone of heating is electrically connected with electrode；
Second substrate, with the 3rd surface, second thermal insulation layer is provided with the 3rd surface；
Also, the second surface of at least described first substrate is combined and made with the 3rd face seal of second substrate
An at least vacuum cavity is formed between first substrate and the second substrate, thermal break is coated with the wall of the vacuum cavity
Matter.
Further, the local wall body of the vacuum cavity is made up of the first thermal insulation layer and second thermal insulation layer.
Further, the electrode is formed through in the opening on the passivation layer and in electrical contact with the zone of heating.
Further, the micro-hotplate also includes the insulated tank set around the vacuum cavity, is filled out in the insulated tank
Filled with insulation.
The embodiment of the present invention additionally provides a kind of processing of the micro-hotplate with step-like structure and low vacuum cavity
Method, it includes：
First substrate is provided, its have first surface and with first surface back to second surface,
First thermal insulation layer is formed on the first surface of first substrate；
Processing forms insulated tank on the first surface of first substrate, and fills thermal break in the insulated tank
Matter, and the insulated tank is around vacuum cavity setting；
Insulating barrier, step-like structure layer, zone of heating and passivation layer are sequentially formed in the first thermal insulation layer；
Process to form groove structure in the second surface of first substrate, the groove structure is used to form vacuum chamber
Body；
The second substrate is provided, it has the 3rd surface；
Second thermal insulation layer is formed on the 3rd surface of second substrate；
The second surface of first substrate is combined with the 3rd face seal of second substrate and is formed described true
Cavity body.
In some implementations, described preparation method includes：Using vacuum bonding mode make first substrate with
The second substrate sealing is combined.
Preferably, the vacuum bonding temperature for being used in the vacuum bonding mode is 600~1000 DEG C, and vacuum is 10-3
~100Pa.
In some implementations, described preparation method includes：Using plasma dry etch process is to described
The second surface of one substrate is processed so as to form described groove structure.
Further, the depth of the groove structure is preferably 50 μm~500 μm.
In some implementations, described preparation method includes：Processing forms opening portion on the passivation layer, described
Opening portion is used to make the zone of heating be electrically connected with electrode；
Further, in the present invention, the wall body of aforementioned vacuum cavity by the first thermal insulation layer, second thermal insulation layer and
The insulation being filled in the insulated tank is constituted.
Further, in the present invention, the vacuum of aforementioned vacuum cavity is preferably 10-3Pa~100Pa.
Further, in the present invention, the depth of aforementioned vacuum cavity is preferably 10 μm~300 μm.
Further, in the present invention, foregoing first substrate or the second substrate can select silicon substrate, particularly monocrystalline silicon
Substrate.
Further, in the present invention, foregoing first thermal insulation layer or second thermal insulation layer can be porous silicon thermal insulation layer.
Further, the thickness of the porous silicon thermal insulation layer is preferably 5 μm~200 μm, especially preferably 10 μm~100 μ
M, porosity is 50%~90%.
Further, in the present invention, former electrodes be formed through in the opening on the passivation layer and with the heating
Layer is in electrical contact.
Further, in the present invention, the step depth of aforementioned step structure sheaf is preferably 100nm~1000nm, wide
Degree is preferably 1 μm~50 μm, and gap width is preferably 1 μm~50 μm.
Further, in the present invention, the step shape of aforementioned step structure sheaf includes annular or inverted trapezoidal etc., and
Not limited to this.
Further, in the present invention, the depth of foregoing insulated tank is preferably 10 μm~300 μm.
Further, in the present invention, foregoing insulation leads polymer etc. including porous silicon or low-heat, and is not limited to
This.For example, the low thermal conductive polymer includes polyimides or dimethyl silicone polymer etc..
Further, in the present invention, the thickness of foregoing zone of heating is preferably 100nm~500nm.
Further, in the present invention, the material of foregoing zone of heating is including any one in TaAlN, polysilicon, W, TIN
Plant or two or more combinations, and not limited to this.
Further, in the present invention, the thickness of foregoing passivation layer is preferably 100nm~2 μm.
Further, in the present invention, the material of foregoing passivation layer includes SiN, SiO2Or any one in polyimides
Or two or more combinations, and not limited to this.
Further, in the present invention, foregoing zone of heating and passivation layer are respectively provided with ledge structure.
Preferably, aforementioned step structure sheaf, zone of heating and passivation layer are respectively provided with step-like class spring structure.
Compared with prior art, advantages of the present invention includes：
(1) by setting step-like structure layer on the substrates such as monocrystalline substrate, and it is covered in zone of heating, passivation layer etc.
On step-like structure layer, so as to be formed with step-like membrane structure, and then using this there is step-like membrane structure to be in
The characteristic of the spring-like for revealing, can effectively buffer when formed micro-hotplate (following abbreviation device) is given a shock collision
Stress, prevents insulating barrier, zone of heating, passivation layer etc. from being ruptured because stress is excessive, and can also be prevented effectively from device in temperature
There is insulating barrier, zone of heating, passivation layer deformation warpage in degree when drastically changing the problems such as；
(2) by forming the vacuum cavity of low vacuum state in the devices, heat transfer can be significantly reduced, effectively reduces heat
Amount loss, reduces device power consumption, while improving the stability of device.Especially, just gone up by the way that zone of heating is arranged on into vacuum cavity
In square region, the effect of more preferable insulation can be played, so that preferably boost device performance；
(3) by setting multiple thermal insulation layers in the devices, not only can further boost device work when heat scatter and disappear,
Can also be allowed to as supporting layer, further enhance the structural strength of device, improve the reliability for using of micro-hotplate.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is a kind of micro-hotplate overall structure with step-like structure and vacuum cavity in exemplary embodiments of the present invention 1
Schematic diagram, wherein insulated tank filler are porous silicon；
Fig. 2 be in exemplary embodiments of the present invention 2 a kind of insulated tank filler for low thermal conductive polymer has step-like structure
With the micro-hotplate overall structure diagram of vacuum cavity；
Fig. 3 be in an exemplary embodiments of the invention in a kind of process of micro-hotplate in the first substrate (upper silicon substrate)
The upper schematic diagram for forming groove structure；
Fig. 4 is the second substrate (the lower silicon used in a kind of process of micro-hotplate in an exemplary embodiments of the invention
Substrate) schematic diagram；
Fig. 5 is that step-like structure is the schematic diagram of annular in an exemplary embodiments 3 of the invention；
Fig. 6 is that step-like structure is the schematic diagram of inverted trapezoidal in an exemplary embodiments 4 of the invention；
Description of reference numerals：The upper silicon substrates of 1-；2- porous silicon layers；3- insulated tanks；4- insulating barriers；5- ledge structures layer；6-
Zone of heating；7- passivation layers；8- aperture portions, 9- porous silicon heat insulation layers；Silicon substrate under 10-；11- vacuum cavities；12/12 '-porous silicon
Material.
Specific embodiment
In view of deficiency of the prior art, inventor is able to propose of the invention through studying for a long period of time and largely put into practice
Technical scheme.The technical scheme, its implementation process and principle etc. will be further explained as follows.
The one side of the embodiment of the present invention provides a kind of micro-hotplate with step-like structure and low vacuum cavity, its
Including：
First substrate, with first surface and with first surface back to second surface, on the first surface successively
First thermal insulation layer, insulating barrier, step-like structure layer, zone of heating and passivation layer are provided with, the zone of heating is electrically connected with electrode；
Second substrate, with the 3rd surface, second thermal insulation layer is provided with the 3rd surface；
Also, the second surface of at least described first substrate is combined and made with the 3rd face seal of second substrate
An at least vacuum cavity is formed between first substrate and the second substrate, thermal break is coated with the wall of the vacuum cavity
Matter.
Wherein, the insulations such as porous silicon are covered by the vacuum cavity surface, can be effectively solved exposed to sky
Thermal losses caused by the first substrate surface in gas, further reduces power consumption, strengthens the heating properties of micro-hotplate.
Further, the local wall body of the vacuum cavity is made up of the first thermal insulation layer and second thermal insulation layer.
Further, the electrode is formed through in the opening on the passivation layer and in electrical contact with the zone of heating.
Further, the micro-hotplate also includes the insulated tank set around the vacuum cavity, is filled out in the insulated tank
Filled with insulation.Using the insulation being filled in insulated tank (also referred to as isolation channel), distribution on the one hand can be increased
The intensity of the membrane structure above vacuum cavity, it can in addition contain reach the effect for strengthening being thermally isolated.
Further, the insulated tank can be formed between the main body of the first substrate and vacuum cavity.Particularly make vacuum
The wall body of cavity is made up of the first thermal insulation layer, second thermal insulation layer and the insulation being filled in the insulated tank.
The another aspect of the embodiment of the present invention is additionally provided described in a kind of making has step-like structure and low vacuum cavity
Micro-hotplate method, it includes：
First substrate is provided, its have first surface and with first surface back to second surface,
First thermal insulation layer is formed on the first surface of first substrate；
Processing forms insulated tank on the first surface of first substrate, and fills thermal break in the insulated tank
Matter, and the insulated tank is around vacuum cavity setting；
Insulating barrier, step-like structure layer, zone of heating and passivation layer are sequentially formed in the first thermal insulation layer；
Process to form groove structure in the second surface of first substrate, the groove structure is used to form vacuum chamber
Body；
The second substrate is provided, it has the 3rd surface；
Second thermal insulation layer is formed on the 3rd surface of second substrate；
The second surface of first substrate is combined with the 3rd face seal of second substrate and is formed described true
Cavity body.
In some implementations, described preparation method includes：Using vacuum bonding mode make first substrate with
The second substrate sealing is combined.
Preferably, the vacuum bonding temperature for being used in the vacuum bonding mode is 600~1000 DEG C, and vacuum is 10-3
~100Pa.
In some implementations, described preparation method includes：Using plasma dry etch process is to described
The second surface of one substrate is processed so as to form described groove structure.
Further, the depth of the groove structure is preferably 50 μm~500 μm.
In some implementations, described preparation method includes：Processing forms opening portion on the passivation layer, described
Opening portion is used to make the zone of heating be electrically connected with electrode；
Further, in the present invention, the wall body of aforementioned vacuum cavity by the first thermal insulation layer, second thermal insulation layer and
The insulation being filled in the insulated tank is constituted.
Further, in the present invention, the vacuum of aforementioned vacuum cavity is preferably 10-3Pa~100Pa.
Further, in the present invention, the depth of aforementioned vacuum cavity is preferably 10 μm~300 μm.
In the present invention, by using the foregoing vacuum cavity with low vacuum state, the low-grade fever can be significantly reduced
Plate heat transfer in the course of the work outwardly, effectively reduces thermal loss, reduces power consumption, while improving the stabilization of micro-hotplate
Property.
Further, in the present invention, foregoing first substrate or the second substrate can select silicon substrate, particularly monocrystalline silicon
Substrate.
Further, in the present invention, foregoing first thermal insulation layer or second thermal insulation layer can be porous silicon thermal insulation layer.
Further, the thickness of the porous silicon thermal insulation layer is preferably 5 μm~200 μm, especially preferably 10 μm~100 μ
M, porosity is 50%~90%.
Further, in the present invention, former electrodes be formed through in the opening on the passivation layer and with the heating
Layer is in electrical contact.
Further, in the present invention, the step depth of aforementioned step structure sheaf is preferably 100nm~1000nm, wide
Degree is preferably 1 μm~50 μm, and gap width is preferably 1 μm~50 μm, is preferably slowed down with ensureing that step-like structure layer can be produced
The effect of stress and raising intensity.
Further, in the present invention, the step shape of aforementioned step structure sheaf includes annular or inverted trapezoidal etc., and
Not limited to this.
Further, in the present invention, the depth of foregoing insulated tank is preferably 10 μm~300 μm.
Further, in the present invention, foregoing insulation leads polymer etc. including porous silicon or low-heat, and is not limited to
This.For example, the low thermal conductive polymer includes polyimides or dimethyl silicone polymer etc..
In the present invention, foregoing porous silicon can be obtained using chemical etching technology, and its porosity is preferably 50%-
90%.
Further, in the present invention, the thickness of foregoing zone of heating is preferably 100nm~500nm.
Further, in the present invention, the material of foregoing zone of heating is including any one in TaAlN, polysilicon, W, TiN
Plant or two or more combinations, and not limited to this.
Further, in the present invention, the thickness of foregoing passivation layer is preferably 100nm~2 μm.
Further, in the present invention, the material of foregoing passivation layer includes SiN, SiO2Or any one in polyimides
Or two or more combinations, and not limited to this.
Further, in the present invention, foregoing zone of heating and passivation layer are respectively provided with ledge structure.
Preferably, aforementioned step structure sheaf, zone of heating and passivation layer are using thin with step-like class spring structure
Film.
In the present invention, by forming foregoing step-like membrane structure in micro-hotplate, it is possible to use should have step
The characteristic of the spring-like that the membrane structure of shape shows, answering when effectively the formed micro-hotplate of buffering is given a shock collision
The intensity of the structure sheafs such as power, reinforced insulation layer, zone of heating, passivation layer, prevents it from being ruptured because stress is excessive, and effectively keep away
Exempt from device occur when temperature drastically changes insulating barrier, zone of heating, passivation layer deformation warpage the problems such as.
In of the invention one more specific embodiment, a kind of low-grade fever with step-like structure and low vacuum cavity
Plate can include：Upper silicon substrate (monocrystalline substrate, i.e., foregoing first substrate)；Porous silicon thermal insulation layer, is formed at the upper silicon lining
The upper surface at bottom and with certain depth；Insulated tank；Insulating barrier, covers the upper surface of the porous silicon thermal insulation layer；It is formed at absolutely
The step-like structure layer on edge layer surface；Zone of heating, is arranged at the upper surface of the step-like structure layer；Passivation layer, covering is described
The upper surface of zone of heating；Lower silicon substrate (monocrystalline substrate, i.e., foregoing second substrate), covers one layer of Porous Silicon structures thereon, should
Lower silicon substrate forms a vacuum cavity with low vacuum, the inwall of vacuum cavity by the upper silicon substrate of vacuum bonding mode month
Insulated material covering, zone of heating is located at the surface of vacuum cavity.
Wherein, it is located in the area just above of the vacuum cavity and insulating barrier etc. by making zone of heating, is may be such that described
Vacuum cavity can reduce to greatest extent heat scatter and disappear and heat insulation layer can more stably support zone of heating, while also ensuring
Sufficient effect of heat insulation.
Wherein, by the way that zone of heating, passivation layer to be covered in the upper surface of step-like structure layer, and it is designed to class bullet
Spring it is step-like, can effectively buffer stress when micro-hotplate is given a shock collision, prevent zone of heating, passivation layer etc. because stress mistake
Rupture greatly, micro-hotplate can also be prevented effectively from and added caused by zone of heating, passivation layer deformation warpage when temperature change is larger
Thermosphere comes off.
Wherein, in order to ensure preferable Stress Control, the distance of the step-like structure layer is preferably 20-100 μm, width
Preferably 300-1000nm, step spacing is preferably 1-5 μm.
Wherein, in order to strengthen the insulation effect of vacuum cavity, can form many on the outer wall of vacuum cavity and/or inwall
Mesoporous silica film, and the thickness of the porous silicon film is preferably 5 μm~200 μm.Further, in order to strengthen the exhausted of vacuum cavity
Thermal effect and reduction heat transfer, can make the vacuum in vacuum cavity be maintained at 10-3In the range of Pa~100Pa, that is, be allowed to for
Low vacuum cavity.
In of the invention one more specific embodiment, the processing method of foregoing micro-hotplate can include following step
Suddenly：
S1, prepare porous silicon thermal insulation layer in the upper surface preparation of upper silicon substrate；
S2, silicon substrate surrounding digs insulated tank on above-mentioned, wherein filling adiabatic polymerisation thing or preparing porous silicon；
S3, prepare insulating barrier in the above-mentioned upper surface of silicon for preparing porous silicon；
S4, above-mentioned surface of insulating layer etch to be formed Stress Release step-like structure layer；
S5, in above-mentioned step-like structure layer zone of heating prepared above；
S6, the deposit passivation layer on above-mentioned zone of heating；
S7, above-mentioned passivation layer edge retain breach formed zone of heating lead window (opening portion), beneficial to zone of heating and electrode
Electrical connection；
S8, silicon substrate back-etching forms cavity (i.e. aforementioned grooves structure) on above-mentioned, wherein plasma can be used
Body dry etch process, can also use wet corrosion technique；
S9, lower surface of silicon prepare porous silicon layer；
Lower silicon substrate prepared by S10, the silicon substrate for being prepared above-mentioned steps S8 using techniques such as Vacuum Packages and step S9
Vacuum bonding, forms vacuum cavity, particularly low vacuum cavity.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art obtained on the premise of creative work is not made it is all its
His embodiment, belongs to the scope of protection of the invention.
Embodiment 1
Fig. 1 is referred to, a kind of micro-hotplate with step-like structure and vacuum cavity of the embodiment includes：Upper silicon substrate
1；Porous silicon layer 2, is formed on this surface of silicon substrate 1 and with certain thickness；Insulated tank 3, filled with porous silica material 12；
Insulating barrier 4, is covered on the porous silicon layer 2；Step-like structure layer 5, is arranged on above-mentioned insulating barrier 4；Zone of heating 6, covers
Cover on step-like structure layer 5；Passivation layer 7, is covered on zone of heating 6；Aperture portion 8；Lower silicon substrate 10；Porous silicon heat insulation layer 9,
It is covered on lower silicon substrate 10.Lower silicon substrate 10, porous silicon heat insulation layer 9, upper silicon substrate 1, porous silicon layer 2 and insulated tank 3 are enclosed
Form a vacuum cavity 11.
Wherein described zone of heating 6 is located at the area just above of the porous silicon layer 2, insulating barrier 4 and step-like structure layer 5
It is interior so that the porous silicon layer 2, insulating barrier 4 and step-like structure layer 5 can more stably support zone of heating, effectively prevent
Because the rupture occurred without effectively support when micro-hotplate (abbreviation device) is given a shock collision.Meanwhile, aforementioned step knot
Structure can also effectively the slow down micro-hotplate stress that produces when collision is being used or when temperature drastically changes, it is to avoid cause zone of heating because
Ruptured caused by deformation warpage and come off, device stability and service life during use is effectively improved, while the heating
Layer 6 is located in the area just above of the vacuum cavity 11, moreover it is possible to ensure good effect of heat insulation
The step-like structure slows down stress and improves the effect of intensity and the selection of its material, width and step spacing to be had
Close.On the premise of ensureing that technique is realized, step is deeper, width is smaller, spacing is smaller, slows down stress and improves intensity effect and gets over
It is good.
In order to ensure that step-like structure layer can produce preferable support strength and insulation effect, the step-like structure layer 5
Lower surface cover one layer of porous silicon layer 2, its thickness be 100 μm, porosity is 50%.
In order to ensure that step-like structure has the effect for preferably slowing down stress and improving intensity, the step-like structure layer
Step depth can be 100nm~1000nm, step clearance can be 500nm, width can for 1 μm~50 μm, this implementation
Step clearance is preferably 1 μm in example, and step width is preferably 1 μm.
Referring to Fig. 1, in order to strengthen the heat insulating effect of insulated tank 3, the inner filling porous silicon of the insulated tank 3 or
Person's low-heat leads polymer, and the adiabatic groove depth of surrounding is 100 μm, and the porosity of previous porous silicon is about 50%.
Because the general electrical conductivity of zone of heating is higher, in order to ensure safety, insulating barrier preferably is set on the porous silicon layer 2
4, insulating barrier can be silicon nitride/silicon oxide film, and thickness is 50nm.
The zone of heating 6 can be TaAlN films, and thickness is 100nm.
The zone of heating 6 can also be polysilicon/W/TiN/Mo/Pt etc., but not limited to this.
Likewise, because the general electrical conductivity of zone of heating is higher, in order to ensure safety, being set preferably on the zone of heating 6
Passivation layer 7, the passivation layer can be SiN, and thickness is 100nm.
Preferably, the passivation layer 7 can also SiO2/ polyimides.
For the ease of zone of heating lead, opening portion 8 can also be processed in the edge of passivation layer 7 on described, be used to it is accommodating plus
Thermode.
For the ease of forming adiabatic vacuum cavity, porous silicon layer (i.e. previous porous are preferably prepared on lower silicon substrate 10
Silicon heat insulation layer 9), the thickness of the porous silicon heat insulation layer 9 is 50 μm, and porosity is 50%.Lower silicon substrate is preferably silicon chip (especially
It is monocrystalline substrate), thickness is 500 μm.
Fig. 1, Fig. 3 and Fig. 4 are referred to, the processing method of the present embodiment micro-hotplate may comprise steps of：
S1, prepare porous silicon layer 2 in the upper surface of upper silicon substrate 1；
S2, the surrounding of above-mentioned monocrystalline substrate 1 prepare insulated tank 3, filled using porous silica material 12；
S3, prepare insulating barrier 4 in the upper surface of the upper silicon substrate 1 with the porous silicon layer 2；
S4, the upper surface of the upper silicon substrate 1 with the porous silicon layer 2 prepare step-like structure layer 5；
S5, prepare zone of heating 6 in the upper surface of the step-like structure layer 5 for preparing, the zone of heating 6 is located at the step
The area just above of shape structure sheaf 5,；
S6, the upper surface in the zone of heating 6 for preparing, passivation layer 7 is prepared according to the method for step S3；
S7, for the ease of zone of heating lead, retain breach at its edge when can in step s 6 prepare the passivation layer
Form opening portion 8；
S8, upper silicon substrate back-etching form groove structure；
The preparation of S9, lower surface of silicon porous silicon (porous silicon heat insulation layer 9)；
S10, upper silicon substrate and lower silicon substrate vacuum bonding, form vacuum cavity；
Preferably, the size of the upper silicon substrate 1 can be 2~12 cun, it is possible to use monocrystalline substrate.
Described method also includes：Before the S1 steps, using the concentrated sulfuric acid upper silicon substrate 1 is boiled 10~30 minutes, it
The upper silicon substrate 1 is cleaned with solution such as deionized waters afterwards, is then dried up with nitrogen.
In order to ensure preferable effect of heat insulation, the thickness of porous silicon layer 2 is 100 μm in the S1 steps, and porosity is
50%, prepared using the method for wet etching.
The method for preparing the insulated tank 3 in the step S2 is dry etching, specially：First define with photoresist
The position of groove and shape, then groove is produced with dry etch process, the interior porous silicon of groove is filled.
In order to strengthen the insulation effect of zone of heating, after the step S2 steps, also include：In the insulated tank 3 for preparing
Surface prepare silica membrane 4 as insulating barrier；The method of silica membrane is prepared for thermal oxidation process, and described two
The thickness of silicon oxide film is 50nm；Detailed process is：Magnetron sputtering will be used on upper silicon substrate 1 with the insulated tank 3
Deposition layer of silicon dioxide.
In the step S4, when preparing step-like structure layer 5, the step-like structure layer 5 falls in the insulating barrier 4
In area just above so that the step-like structure can more stably support zone of heating 6, effectively slow down anti-device and be given a shock
The larger stress of ratio that collision or temperature are produced when drastically changing, prevents rupture.
In order to ensure safety, passivation layer 7 is set on silicon substrate 1 and the zone of heating 6 on described, is prepared in step S6 blunt
Change layer 7 method be：The magnetron sputtering deposition layer of sin on silicon substrate 1 and the zone of heating 6 on described, thickness can be
100nm。
Optionally, the passivation layer 7 can also be SiO2/ polyimides.
Scattered and disappeared to reduce heat, during vacuum cavity 11 is prepared, can be carried on the back upper silicon substrate by step S8
Face etches to form cavity (i.e. aforementioned grooves structure), as shown in figure 3, etching can be by wet etching and dry plasma etch.
And then, porous silicon can be formed on lower silicon substrate 10 by step S9 wet etchings.Can be by step S10 by upper silicon substrate
With lower silicon substrate vacuum bonding, the vacuum cavity 11 of low vacuum is formed, the vacuum of the vacuum cavity is 10-3Pa, can be notable
Reinforcing heat insulation, reduce heat transfer.
Embodiment 2
Fig. 2 is referred to, a kind of micro-hotplate with step-like structure and vacuum cavity of the embodiment includes：Upper silicon substrate
1；Porous silicon layer 2, is formed on silicon substrate 1 surface and with certain thickness；Insulated tank 3, is filled out with low thermal conductive polymer 12 '
Fill；Insulating barrier 4, is covered on the porous silicon layer 2；Step-like structure layer 5, is arranged on insulating barrier 4；Zone of heating 6, covering
On step-like structure layer 5；Passivation layer 7, is covered on zone of heating 6；Opening portion 8；Lower silicon substrate 10；Porous silicon heat insulation layer 9, covers
Cover on lower silicon substrate 10；Vacuum cavity 11.
Wherein described zone of heating 6 is located at the area just above of the porous silicon layer 2, insulating barrier 4 and step-like structure layer 5
It is interior so that the porous silicon layer 2, insulating barrier 4 and step-like structure layer 5 can more stably support zone of heating, effectively prevent
Because without effectively supporting and the rupture of generation, step-like structure can also effectively slow down micro-hotplate when device is given a shock collision
The stress produced when using collision or when temperature drastically changes, it is to avoid cause because rupture is de- caused by zone of heating deformation warpage
Fall, effectively improve stability and service life during use；Meanwhile, the zone of heating 6 is being located at the vacuum cavity 11 just
In upper area, moreover it is possible to ensure sufficient effect of heat insulation
In the present invention, described step-like structure slows down stress and improves the effect of intensity and selection, the width of its material
Degree and step spacing are relevant.Ensure technique realize on the premise of, step is deeper, width is smaller, spacing is smaller, slow down stress and
Improve intensity effect better.
In order to ensure that step-like structure layer can produce preferable support strength and insulation effect, the step-like structure layer 5
Lower surface cover one layer of porous silicon layer 2, thickness be 50 μm, porosity is 60%.
In order to ensure that step-like structure layer preferably slows down the effect of stress and raising intensity, the step-like structure layer
Step depth is 100nm~1000nm, and the present embodiment step clearance is 500nm.Width：1 μm~50 μm, between the present embodiment step
Gap is 10 μm, gap width：1 μm~50 μm, the present embodiment step width is 10 μm.
Fig. 2 is referred to again, in order to strengthen the heat insulating effect of insulated tank 3, the low heat conduction polymerization of the inner filling of the insulated tank 3
Thing 12 ', 10 μm~300 μm of adiabatic groove depth, porous silicon thickness can be 100 μm, and porosity is 50%.
Because the general electrical conductivity of zone of heating is higher, in order to ensure safety, insulating barrier 4 is set on the porous silicon layer 2, should
Insulating barrier can be silicon nitride/silicon oxide film, and thickness can be 50nm.
The zone of heating 6 can be Pt films, and thickness is 200nm.Optionally, the zone of heating 6 can also polysilicon/W/
TiN/Mo/Pt etc., but not limited to this.
Likewise, because the general electrical conductivity of zone of heating is higher, in order to ensure safety, being set preferably on the zone of heating 6
Passivation layer 7, the passivation layer can be SiN, and thickness is 100nm.Optionally, the passivation layer 7 can also be SiO2/ polyamides is sub-
Amine.
For the ease of zone of heating lead, can process to form opening portion 8 in the edge of passivation layer 7 on described, be used to it is accommodating plus
Thermode.
For the ease of forming heat-insulation vacuum cavity, one layer of porous silicon heat insulation layer 9 can be covered in lower layer-of-substrate silicon 10, its
Thickness is 50 μm, and porous silicon porosity is 50%.Silicon substrate is wherein descended for silicon chip (particularly monocrystalline substrate), thickness is 500 μ
m。
The processing method of foregoing micro-hotplate is comprised the following steps：
S1, prepare porous silicon layer 2 in the upper surface of upper silicon substrate 1；
S2, the surrounding of above-mentioned monocrystalline substrate 1 dig insulated tank 3, using low thermal conductive polymer 12 ' fill；
S3, prepare insulating barrier 4 in the upper surface of the upper silicon substrate 1 with the porous silicon layer；
S4, the upper surface of the upper silicon substrate 1 with the porous silicon layer 2 prepare step-like structure layer 5；
S5, prepare zone of heating 6 in the upper surface of the step-like structure layer 5 for preparing, the zone of heating 6 is located at the step
In shape structure sheaf area just above；
S6, the upper surface in the zone of heating 6 for preparing, passivation layer 7 is prepared according to the method for step S3；
S7, retain breach at its edge when can in step s 6 prepare the passivation layer and form opening portion 8；
S8, upper silicon substrate back-etching formed cavity (i.e. aforementioned grooves structure)；
The preparation of S9, lower surface of silicon porous silicon (porous silicon heat insulation layer 9)；
S10, upper silicon substrate and lower silicon substrate vacuum bonding, form vacuum cavity；
Optionally, the size of the upper silicon substrate 1 can be 2~12 cun, it is possible to be monocrystalline substrate.
Described method also includes：Before the S1 steps, 10 are boiled to upper silicon substrate (monocrystalline substrate) 1 using the concentrated sulfuric acid
~30 minutes, with solution such as deionized waters the upper silicon substrate 1 is cleaned afterwards, then dried up with nitrogen.
In order to ensure preferable effect of heat insulation, the thickness of porous silicon layer 2 is 100 μm in the S1 steps, and porosity is
50%, prepared using the method for wet etching.
The method for preparing the insulated tank 3 in the step S2 is dry etching, specially：First define with photoresist
The position of groove and shape, then groove is produced with dry etch process, the interior porous silicon of groove is filled.
In order to strengthen the insulation effect of zone of heating, after the step S2 steps, also include：In the insulated tank 3 for preparing
Surface prepare silica membrane as insulating barrier.The method of silica membrane is prepared for thermal oxidation process, and described two
The thickness of silicon oxide film is 50nm.Detailed process is：Magnetron sputtering will be used on upper silicon substrate 1 with the insulated tank 3
Deposition layer of silicon dioxide.
In the step S4, when preparing step-like structure layer 5, the step-like structure layer 5 falls in the insulating barrier 4
In area just above so that the step-like structure can more stably support zone of heating 6, effectively slow down anti-device and be given a shock
The larger stress of ratio that collision or temperature are produced when drastically changing, prevents rupture.
In order to ensure safety, passivation layer 7 is set on silicon substrate 1 and the zone of heating 6 on described.Prepared in step S6 blunt
Change layer 7 method be：The magnetron sputtering deposition layer of sin on silicon substrate 1 and the zone of heating 6 on described, thickness is 100nm.
Optionally, the passivation layer 7 can also be SiO2/ polyimides.
The method that the zone of heating is prepared in the step S5 is：One layer of TaAlN film is deposited on the lower insulating barrier,
On TaAlN films spin coating lithographic definition go out zone of heating shape and position as barrier layer, removed using ion reaction etching
Unnecessary TaAlN films obtain TaAlN film heatings silk layer, and the thickness of the TaAlN film heatings silk layer is 100nm.
Optionally, described 6 polysilicons of zone of heating/W/TiN/Mo/Pt etc..
Optionally, scattered and disappeared to reduce heat, during vacuum cavity 11 is prepared, can be carried on the back by by upper silicon substrate
Face etches to form groove structure, as shown in figure 3, etching can be by wet etching and dry plasma etch, by wet etching
Porous silicon is formed on lower silicon substrate 10, by by upper silicon substrate and lower silicon substrate vacuum bonding, forming vacuum cavity 11, vacuum
Chamber vacuum degree is 10-3Pa can significantly strengthen heat insulation, reduce heat transfer.
Embodiment 3
Refer to Fig. 1 or Fig. 2 and Fig. 5, a kind of micro-hotplate with step-like structure and vacuum cavity of the embodiment
Including：Upper silicon substrate 1；2 porous silicon layers 2, are formed on above-mentioned heating chip on silicon substrate 1 surface and with certain thickness；
Insulated tank 3, is filled with porous silicon；Insulating barrier 4, is covered on the porous silicon layer 2；Step-like structure layer 5, is arranged at above-mentioned exhausted
On edge layer 4；Zone of heating 6, is covered on step-like structure layer 5；Passivation layer 7, is covered on zone of heating 6；Opening portion 8；Lower silicon
Substrate 10；Porous silicon heat insulation layer 9, is covered on lower silicon substrate 10, vacuum cavity 11.
The zone of heating 6 is located in the area just above of the porous silicon layer 2, insulating barrier 4 and step-like structure layer 5,
Enable that the porous silicon layer 2, insulating barrier 4 and step-like structure layer 5 more stably supports zone of heating, effectively prevent device
Because without effectively supporting and the rupture of generation, step-like structure can also effectively slow down micro-hotplate to be made when being given a shock collision
The stress that produces during with collision or when temperature drastically changes, it is to avoid cause to come off because being ruptured caused by zone of heating deformation warpage.Have
Effect improves stability and service life during use, meanwhile, the zone of heating 6 is located at the surface area of the vacuum cavity 11
In domain, moreover it is possible to ensure sufficient effect of heat insulation
In the present invention, described step-like structure slows down stress and improves the effect of intensity and selection, the width of its material
Degree and step spacing are relevant.Ensure technique realize on the premise of, step is deeper, width is smaller, spacing is smaller, slow down stress and
Improve intensity effect better.Fig. 5 is referred to, the step shape structure layer 5 in the embodiment can include multiple ecto-entads gradually
Become the circular step for reducing.
In order to ensure that step-like structure layer can produce preferable support strength and insulation effect, the step-like structure layer 5
Lower surface cover one layer of porous silicon layer 2, its thickness be 100 μm, porosity is 50%.
In order to ensure that step-like structure layer preferably slows down the effect of stress and raising intensity, the step-like structure layer
Step depth is 500nm, and width is 1 μm.
Fig. 1 or Fig. 2 is referred to, in order to strengthen the heat insulating effect of insulated tank 3, the inner filling porous silicon of the insulated tank 3
12 or low thermal conductive polymer 12 ', 10 μm~300 μm of the depth of insulated tank, the thickness of porous silicon is 100 μm, and porosity is
50%.
Because the general electrical conductivity of zone of heating is higher, in order to ensure safety, insulating barrier 4 is set on the top of the porous silicon layer 2.
Insulating barrier is silica, and thickness is 50nm.
The zone of heating 6 is TaAlN films, and thickness is 100nm.
Optionally, the zone of heating 6 can also polysilicon/W/TiN/Mo/Pt etc..
Likewise, because the general electrical conductivity of zone of heating is higher, in order to ensure safety, being set preferably on the zone of heating 6
Passivation layer 7, the passivation layer can be SiN, and thickness is 100nm.
Optionally, the passivation layer 7 can also be SiO2/ polyimides.
For the ease of zone of heating lead, the edge of upper passivation layer 7 can be set opening portion 8, with accommodating heating electrode.
For the ease of forming heat-insulation vacuum cavity, porous silicon heat insulation layer 9 can be prepared on lower silicon substrate 10, its thickness is
50 μm, porosity is 50%.Lower silicon substrate is silicon chip (particularly monocrystalline substrate), and thickness is 500 μm.
The processing method of foregoing micro-hotplate is comprised the following steps：
S1, prepare porous silicon layer 2 in the upper surface of upper silicon substrate 1；
S2, the surrounding of silicon substrate 1 digs insulated tank 3 on above-mentioned, is filled using porous silicon 12 or low thermal conductive polymer 12 '；
S3, prepare insulating barrier 4 in the upper surface of the upper silicon substrate 1 with the porous silicon layer 2；
S4, the upper surface of the upper silicon substrate 1 with the porous silicon layer 2 prepare step-like structure layer 5；
S5, prepare zone of heating 6 in the upper surface of the step-like structure layer 5 for preparing, the zone of heating 6 is located at the step
In shape structure sheaf area just above；
S6, the upper surface in the zone of heating 6 for preparing, passivation layer 7 is prepared according to the method for step S3；
It is S7, preferred, for the ease of zone of heating lead, protected at its edge when can in step s 6 prepare the passivation layer
Breach is stayed to form opening portion 8；
S8, upper silicon substrate back-etching form groove structure；
The preparation of S9, lower surface of silicon porous silicon heat insulation layer 9；
S10, upper silicon substrate and lower silicon substrate vacuum bonding, form vacuum cavity；
Optionally, the size of the upper silicon substrate 1 can be 2~12 cun, it is possible to use monocrystalline substrate.
Described method also includes：Before the S1 steps, using the concentrated sulfuric acid upper silicon substrate 1 is boiled 10~30 minutes, it
The upper silicon substrate 1 is cleaned with solution such as deionized waters afterwards, is then dried up with nitrogen.
In order to ensure preferable effect of heat insulation, the thickness of porous silicon layer 2 is 100 μm in the S1 steps, and porosity is
50%；Prepared using the method for wet etching.
The method for preparing the insulated tank 3 in the step S2 is dry etching, specially：First define with photoresist
The position of groove and shape, then groove is produced with dry etch process, the interior porous silicon of groove is filled.
Insulation effect is protected in order to strengthen zone of heating, after the step S2 steps, is also included：In the insulated tank 3 for preparing
Surface prepare silica membrane；The method of silica membrane is prepared for thermal oxidation process, and the silica membrane
Thickness be 50nm；Detailed process is：Upper silicon substrate 1 with the insulated tank 3 is used into one layer of dioxy of magnetron sputtering deposition
SiClx.
In the step S4, when preparing step-like structure layer 5, the step-like structure layer 5 falls in the insulating barrier 4
In area just above so that the step-like structure can more stably support zone of heating 6, effectively slow down anti-device and be given a shock
The larger stress of ratio that collision or temperature are produced when drastically changing, prevents rupture.
In order to ensure safety, passivation layer 7 is set on silicon substrate 1 and the zone of heating 6 on described, due to silica tool
There are preferable insulating properties, insulating barrier can be used as；The method that passivation layer 7 is prepared in step S6 is：On described silicon substrate 1 and
Magnetron sputtering deposition layer of sin on the zone of heating 6, thickness is 100nm.
Optionally, the passivation layer 7 can also be SiO2/ polyimides.
The method that the zone of heating is prepared in the step S5 is：One layer of TaAlN film is deposited on the lower insulating barrier,
On TaAlN films spin coating lithographic definition go out zone of heating shape and position as barrier layer, removed using ion reaction etching
Unnecessary TaAlN films obtain TaAlN film heatings silk layer, and the thickness of the TaAlN film heatings silk layer is 100nm.
Optionally, the zone of heating 6 can also be polysilicon/W/TiN/Mo/Pt etc..
Optionally, scattered and disappeared to reduce heat, during vacuum cavity 11 is prepared, can be carried on the back by by upper silicon substrate
Face etches to form groove structure, as shown in figure 3, etching can be by wet etching and dry plasma etch, by wet etching
Porous silicon is formed on lower silicon substrate 10, by by upper silicon substrate and lower silicon substrate vacuum bonding, forming low vacuum cavity 11, very
Cavity body vacuum is 10-3Pa。
Embodiment 4
Refer to Fig. 1 or Fig. 2 and Fig. 6, a kind of micro-hotplate with step-like structure and vacuum cavity of the embodiment
Including：Upper silicon substrate 1；Porous silicon layer 2, is formed on above-mentioned heating chip on silicon substrate 1 surface and with certain thickness；Absolutely
Heat channel 3, is filled with low thermal conductive polymer；Insulating barrier 4, is covered on the porous silicon layer 2；Step-like structure layer 5 is arranged at
State on insulating barrier 4；Zone of heating 6 is covered on step-like structure layer 5；Passivation layer 7, is covered on zone of heating 6；Opening portion 8；Under
Silicon substrate 10；Porous silicon heat insulation layer 9, is covered on lower silicon substrate 10；Vacuum cavity 11.
The zone of heating 6 is located in the area just above of the porous silicon layer 2, insulating barrier 4 and step-like structure layer 5,
So that the porous silicon layer 2, insulating barrier 4 and step-like structure layer 5 can more stably support zone of heating, device is effectively prevented
Because without effectively supporting and the rupture of generation, step-like structure can also effectively slow down micro-hotplate to be made when being given a shock collision
The stress that produces during with collision or when temperature drastically changes, it is to avoid cause to come off because being ruptured caused by zone of heating deformation warpage.Have
Effect improves stability and service life during use, meanwhile, the zone of heating 6 is located at the surface area of the vacuum cavity 11
In domain, moreover it is possible to ensure sufficient effect of heat insulation
In the present invention, described step-like structure slows down stress and improves the effect of intensity and selection, the width of its material
Degree and step spacing are relevant.Ensure technique realize on the premise of, step is deeper, width is smaller, spacing is smaller, slow down stress and
Improve intensity effect better.Fig. 4 is referred to, the step shape structure 5 in the embodiment includes multiple ecto-entad gradual changes
That reduces returns shape step
In order to ensure that step-like structure layer can produce preferable support strength and insulation effect, the step-like structure layer 5
Lower surface cover one layer of 5 μm~200 μm of 2 thickness of porous silicon layer, porosity is 50%-90%.50 μ of the present embodiment porous silicon thickness
M, porosity is 60%.
In order to ensure that step-like structure layer preferably slows down the effect of stress and raising intensity, the step-like structure layer
Step depth is 100nm~1000nm, and width is 1 μm~50 μm, and gap width is 1 μm~50 μm.Preferably, between foregoing step
Gap is 10 μm, step width is 10 μm.
Fig. 1 or Fig. 2 is referred to, in order to strengthen the heat insulating effect of insulated tank 3, can be filled in the insulated tank 3
Porous silicon 12 or low thermal conductive polymer 12 ', wherein 10 μm~300 μm of adiabatic groove depth, the thickness of porous silicon can be 100 μ
M, porosity is 50%.
Because the general electrical conductivity of zone of heating is higher, in order to ensure safety, insulating barrier preferably is set on the porous silicon layer 2
4.Insulating barrier can be silicon nitride/silicon oxide film, thickness 50nm~500nm.Preferably, thickness of insulating layer is 50nm.
The zone of heating 6 is Pt films, and thickness is 200nm.
Optionally, the zone of heating 6 can also be polysilicon/W/TiN/Mo/Pt etc..
Likewise, because the general electrical conductivity of zone of heating is higher, in order to ensure safety, being set preferably on the zone of heating 6
Passivation layer 7, the passivation layer can be SiN, and thickness is 100nm.
Optionally, the passivation layer 7 can also SiO2/ polyimides.
For the ease of zone of heating lead, the edge of upper passivation layer 7 can be set opening portion 8, with accommodating heating electrode.
For the ease of forming heat-insulation vacuum cavity, one layer of porous silicon heat insulation layer 9 can be covered in following layer-of-substrate silicon 10, it is thick
Degree can be 50 μm, and porosity is 50%.Lower silicon substrate is silicon chip (particularly monocrystalline substrate), and thickness is 500 μm.
The processing method of the micro-hotplate is comprised the following steps：
S1, prepare porous silicon layer 2 in the upper surface of upper silicon substrate 1；
S2, the surrounding of silicon substrate 1 digs insulated tank 3 on above-mentioned, is filled out using porous silicon 12 or low thermal conductive polymer 12 ' etc.
Fill；
S3, prepare insulating barrier 4 in the upper surface of the upper silicon substrate 1 with the porous silicon layer；
S4, the upper surface of the upper silicon substrate 1 with the porous silicon layer 2 prepare step-like structure layer 5；
S5, prepare zone of heating 6 in the upper surface of the step-like structure layer 5 for preparing, the zone of heating 6 is located at the step
In shape structure sheaf area just above；
S6, the upper surface in the zone of heating 6 for preparing, passivation layer 7 is prepared according to the method for step S3；
S7, for the ease of zone of heating lead, retain breach at its edge when can in step s 6 prepare the passivation layer
Form opening portion 8；
S8, upper silicon substrate back-etching form groove structure；
The preparation of S9, lower surface of silicon porous silicon (porous silicon heat insulation layer 9)；
S10, by upper silicon substrate and lower silicon substrate vacuum bonding, form vacuum cavity；
Optionally, the size of the upper silicon substrate 1 can be 2~12 cun.
Described method also includes：Before the S1 steps, 10 are boiled to upper silicon substrate (monocrystalline substrate) 1 using the concentrated sulfuric acid
~30 minutes, with solution such as deionized waters the monocrystalline substrate is cleaned afterwards, then dried up with nitrogen.
In order to ensure preferable effect of heat insulation, the thickness of porous silicon layer 2 is 100 μm in the S1 steps, and porosity is
50%；Can be prepared using the method for wet etching.
The method for preparing the insulated tank 3 in the step S2 is dry etching；Specially：First define with photoresist
The position of groove and shape, then groove is produced with dry etch process, the interior porous silicon of groove is filled.
Insulation effect is protected in order to strengthen zone of heating, after the step S2, is also included：In the table of the insulated tank 3 for preparing
Face prepares silica membrane 4 as insulating barrier, prepares the method for silica membrane for thermal oxidation process, and the titanium dioxide
The thickness of silicon thin film is 50nm；Detailed process is：Upper silicon substrate 1 with the insulated tank 3 is used into magnetron sputtering deposition one
Layer silica.
In the step S4, when preparing step-like structure layer 5, the step-like structure layer 5 falls in the insulating barrier 4
In area just above so that the step-like structure can more stably support zone of heating 6, effectively slow down anti-device and be given a shock
The larger stress of ratio that collision or temperature are produced when drastically changing, prevents rupture.
In order to ensure safety, passivation layer 7 is set on silicon substrate 1 and the zone of heating 6 on described；Prepared in step S6 blunt
Change layer 7 method be：The magnetron sputtering deposition layer of sin on silicon substrate 1 and the zone of heating 6 on described, thickness is 100nm.
Optionally, the passivation layer 7 can also be SiO2/ polyimides etc..
The method that the zone of heating is prepared in the step S5 is：One layer of TaAlN film is deposited on the lower insulating barrier,
On TaAlN films spin coating lithographic definition go out zone of heating shape and position as barrier layer, removed using ion reaction etching
Unnecessary TaAlN films obtain TaAlN film heatings silk layer, and the thickness of the TaAlN film heatings silk layer is 100nm.
Optionally, the zone of heating 6 can also be polysilicon/W/TiN/Mo/Pt etc..
Optionally, scattered and disappeared to reduce heat, during vacuum cavity 11 is prepared, can be carried on the back by by upper silicon substrate
Face etches to form groove structure, as shown in figure 3, etching can be by wet etching and dry plasma etch, by wet etching
Porous silicon heat insulation layer 9 is formed on lower silicon substrate 10.By by upper silicon substrate and lower silicon substrate vacuum bonding, forming vacuum cavity
11, the vacuum 10 of vacuum cavity-3Pa, can significantly strengthen heat insulation, reduce heat transfer.
It should be appreciated that above-described embodiment is only explanation technology design of the invention and feature, this is familiar with its object is to allow
The personage of item technology will appreciate that present disclosure and implement according to this that it is not intended to limit the scope of the present invention.It is all
According to the equivalent change or modification that spirit of the invention is made, should all be included within the scope of the present invention.
Claims (10)
1. a kind of micro-hotplate with step-like structure and low vacuum cavity, it is characterised in that including：
First substrate, with first surface and with first surface back to second surface, set gradually on the first surface
There are first thermal insulation layer, insulating barrier, step-like structure layer, zone of heating and passivation layer, the zone of heating is electrically connected with electrode；
Second substrate, with the 3rd surface, second thermal insulation layer is provided with the 3rd surface；
Also, the second surface of at least described first substrate is combined with the 3rd face seal of second substrate and made described
An at least vacuum cavity is formed between first substrate and the second substrate, insulation is coated with the wall of the vacuum cavity.
2. micro-hotplate according to claim 1, it is characterised in that：The local wall body of the vacuum cavity by described first every
Thermosphere and second thermal insulation layer are constituted；Preferably, the vacuum of the vacuum cavity is 10-3Pa~100Pa；Preferably, it is described true
The depth of cavity body is 10 μm~300 μm.
3. micro-hotplate according to claim 1, it is characterised in that：First substrate or the second substrate are silicon substrate；And/or,
The first thermal insulation layer or second thermal insulation layer are porous silicon thermal insulation layer；Preferably, the thickness of the porous silicon thermal insulation layer be 5 μm~
200 μm, preferably 10 μm~100 μm, porosity is 50%~90%；And/or, the electrode is formed through in the passivation layer
On opening and in electrical contact with the zone of heating.
4. micro-hotplate according to claim 1, it is characterised in that：The step depth of the step-like structure layer is 100nm
~1000nm, width is 1 μm~50 μm, and gap width is 1 μm~50 μm；And/or, the step shape of the step-like structure layer
Including annular or inverted trapezoidal.
5. micro-hotplate as claimed in claim 1, it is characterised in that：The micro-hotplate also includes being set around the vacuum cavity
Insulated tank, insulation is filled with the insulated tank；Preferably, the depth of the insulated tank is 10 μm~300 μm；It is preferred that
, the insulation includes that porous silicon or low-heat lead polymer；Preferably, the low thermal conductive polymer includes polyimides
Or dimethyl silicone polymer.
6. micro-hotplate as claimed in claim 1, it is characterised in that：The thickness of the zone of heating is 100nm~500nm；With/
Or, the material of the zone of heating includes any one in TaAlN, polysilicon, W, TIN or two or more combinations；And/or,
The thickness of the passivation layer is 100nm~2 μm；And/or, the material of the passivation layer includes SiN, SiO2Or in polyimides
The combination of any one or more；And/or, the zone of heating and passivation layer are respectively provided with ledge structure；Preferably, the step
Shape structure sheaf, zone of heating and passivation layer are respectively provided with step-like class spring structure.
7. micro-hotplate as claimed in claim 1, it is characterised in that pass through vacuum key between first substrate and the second substrate
Conjunction mode is combined；Preferably, the temperature of the vacuum bonding that the vacuum bonding mode is used for 600 DEG C~1000 DEG C, vacuum
It is 10-3Pa~100Pa.
8. a kind of processing method of the micro-hotplate with step-like structure and low vacuum cavity, it is characterised in that including：
First substrate is provided, first substrate have first surface and with first surface back to second surface,
First thermal insulation layer is formed on the first surface of first substrate；
Processing forms insulated tank on the first surface of first substrate, and fills insulation in the insulated tank, and
The insulated tank is set around vacuum cavity；
Insulating barrier, step-like structure layer, zone of heating and passivation layer are sequentially formed in the first thermal insulation layer；
Process to form groove structure in the second surface of first substrate, the groove structure is used to form vacuum cavity；
The second substrate is provided, second substrate has the 3rd surface；
Second thermal insulation layer is formed on the 3rd surface of second substrate；
The second surface of first substrate is combined with the 3rd face seal of second substrate and the vacuum chamber is formed
Body.
9. processing method according to claim 8, it is characterised in that the processing method includes：On the passivation layer
Processing forms opening portion, and the opening portion is used to make the zone of heating be electrically connected with electrode；
And/or, the processing method includes：Using plasma dry etch process is entered to the second surface of first substrate
Row processing is so as to form described groove structure；
And/or, the processing method includes：Make first substrate be sealed with second substrate using vacuum bonding mode to tie
Close；Preferably, the vacuum bonding temperature for being used in the vacuum bonding mode is 600~1000 DEG C, and vacuum is 10-3~
100Pa。
10. processing method according to claim 8, it is characterised in that：The wall body of the vacuum cavity by described first every
Thermosphere, second thermal insulation layer and the insulation being filled in the insulated tank are constituted；Preferably, the vacuum of the vacuum cavity
Spend is 10-3Pa~100Pa；Preferably, the depth of the vacuum cavity is 10 μm~300 μm；And/or, first substrate or
Second substrate is silicon substrate；And/or, the first thermal insulation layer or second thermal insulation layer are porous silicon thermal insulation layer；Preferably, it is described many
The thickness of hole silicon thermal insulation layer is 5 μm~200 μm, and preferably 10 μm~100 μm, porosity is 50%~90%；And/or, it is described
Electrode is formed through in the passivation layer upper shed and in electrical contact with the zone of heating；And/or, the step-like structure layer
Step depth is 100nm~1000nm, and width is 1 μm~50 μm, and gap width is 1 μm~50 μm；And/or, it is described step-like
The step shape of structure sheaf includes annular or inverted trapezoidal；And/or, the depth of the insulated tank is 10 μm~300 μm；It is preferred that
, the insulation includes that porous silicon or low-heat lead polymer；Preferably, the low thermal conductive polymer includes polyimides
Or dimethyl silicone polymer；And/or, the depth of the groove structure is 50 μm~500 μm；And/or, the thickness of the zone of heating
It is 100nm~500nm；And/or, the material of the zone of heating includes any one or two kinds in TaAlN, polysilicon, W, TIN
Combination above；And/or, the thickness of the passivation layer is 100nm~2 μm；And/or, the material of the passivation layer include SiN,
SiO2Or the combination of any one or more in polyimides；And/or, the zone of heating and passivation layer are respectively provided with Step-edge Junction
Structure；Preferably, the step-like structure layer, zone of heating and passivation layer are respectively provided with step-like class spring structure.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109467044A (en) * | 2018-12-29 | 2019-03-15 | 杭州北芯传感科技有限公司 | Single chip integrated CMOS adds the micro-heater and preparation method of MEMS |
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