CN106742604A - The storage device of semiconductor single-tube laser - Google Patents

The storage device of semiconductor single-tube laser Download PDF

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Publication number
CN106742604A
CN106742604A CN201611121055.3A CN201611121055A CN106742604A CN 106742604 A CN106742604 A CN 106742604A CN 201611121055 A CN201611121055 A CN 201611121055A CN 106742604 A CN106742604 A CN 106742604A
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CN
China
Prior art keywords
semiconductor single
tube laser
storage device
rectangular
accumulation layer
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Granted
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CN201611121055.3A
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Chinese (zh)
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CN106742604B (en
Inventor
王鑫
吴霞
王翠鸾
井红旗
刘素平
马骁宇
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Institute of Semiconductors of CAS
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Institute of Semiconductors of CAS
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Publication of CN106742604A publication Critical patent/CN106742604A/en
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Expired - Fee Related legal-status Critical Current
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65DCONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D25/00Details of other kinds or types of rigid or semi-rigid containers
    • B65D25/38Devices for discharging contents
    • B65D25/52Devices for discharging successive articles or portions of contents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65DCONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D21/00Nestable, stackable or joinable containers; Containers of variable capacity
    • B65D21/02Containers specially shaped, or provided with fittings or attachments, to facilitate nesting, stacking, or joining together
    • B65D21/0209Containers specially shaped, or provided with fittings or attachments, to facilitate nesting, stacking, or joining together stackable or joined together one-upon-the-other in the upright or upside-down position
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65DCONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D25/00Details of other kinds or types of rigid or semi-rigid containers
    • B65D25/02Internal fittings
    • B65D25/10Devices to locate articles in containers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/0084Containers and magazines for components, e.g. tube-like magazines
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65DCONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D2585/00Containers, packaging elements or packages specially adapted for particular articles or materials
    • B65D2585/68Containers, packaging elements or packages specially adapted for particular articles or materials for machines, engines, or vehicles in assembled or dismantled form
    • B65D2585/86Containers, packaging elements or packages specially adapted for particular articles or materials for machines, engines, or vehicles in assembled or dismantled form for electrical components

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Packaging Frangible Articles (AREA)

Abstract

A kind of storage device of semiconductor single-tube laser, formed by n accumulation layer is stacked, each accumulation layer has substrate, there is the rectangular platform of dented space on substrate for upper surface, there is the cuboid of horizontal and vertical periodic arrangement in dented space, there is "+" font boss on each cuboid, the position that "+" font boss caves inward and three adjacent "+" font boss cave inward, and to form "+" font boss be spacing memory space for position, then "+" font boss surrounding forms four equal memory spaces, for storing semiconductor single-tube laser;The lower surface of substrate has the groove being engaged with rectangular platform, and the interior position corresponding with memory space interior angle of groove has cylinder, and when accumulation layer is stacked and placed on another accumulation layer, cylinder fixes the semiconductor single-tube laser of another accumulation layer.The present invention can be prevented effectively from single tube exiting surface generation any damage, spun gold cave in cause laser both positive and negative polarity short circuit;Different single tubes can also be classified and stored.

Description

The storage device of semiconductor single-tube laser
Technical field
The invention belongs to opto-electronic device field of storage, relate more specifically to a kind of storage dress of semiconductor single-tube laser Put.
Background technology
Semiconductor laser have power conversion efficiency high, small volume and it is lightweight many advantages, such as, be solid state laser With the most promising pumping source of optical fiber laser, it is widely used in laser medicine, industrial processes and national defense and military fields.With section The high speed development of skill, the demand to high-brightness semiconductor pumping source is also more and more urgent.The single tube of high power semi-conductor COS encapsulation The advantages of laser relies on its high conversion efficiency, good beam quality, perfect heat-dissipating turns into efficient pumping source, with very wide General potential application field.The Cavity surface of semiconductor laser has the effect for forming resonator and output light, in semiconductor laser Need especially to keep the finish of laser cavity surface in the technique productions of device, storage and transportation, prevent from damaging or stains sharp The degradation of laser performance even fails caused by light device Cavity surface, and this is just to the storage and transport of single-tube semiconductor laser Bring great difficulty.Therefore, research and invention can safely store and transport the storage device of single-tube semiconductor laser It is a research emphasis of this area.
At present, sold in few storage devices on properly storage, transport single-tube semiconductor laser on the market, though Right some storage device can substantially meet requirement, but price is extremely expensive, and cannot mass storage and transport, because This is difficult that suitable single-tube semiconductor laser storage device is commercially available.The present invention proposes a kind of high power semi-conductor COS encapsulates single-tube laser storage device, stackable to use, and facilitates the storage of high power semi-conductor single-tube laser, in movement During single tube can be made to be not easy to move left and right and scratch exiting surface and cause both positive and negative polarity short circuit, conveniently take.
The content of the invention
Based on problem above, it is a primary object of the present invention to propose a kind of storage device of semiconductor single-tube laser, For solving at least one of above technical problem.
To achieve these goals, the present invention proposes a kind of storage device of semiconductor single-tube laser, by n storage Stacking is put and is formed, and wherein n is natural number, and each accumulation layer has a substrate, wherein for each substrate:
The upper surface of substrate is formed with a rectangular platform, and rectangular platform upper surface has a dented space, in dented space Cuboid with horizontal and vertical periodic arrangement, has a wide "+" font isometric with cuboid convex on each cuboid Platform, three adjacent with correspondence at the position that each azimuth of cuboid, i.e. "+" font boss cave inward Be formed between "+" font boss one with cuboid be support, "+" font boss be spacing memory space so that each "+" Font boss surrounding is formed with four equal memory spaces, for storing semiconductor single-tube laser;
The lower surface of substrate has a groove being engaged with rectangular platform, and in groove with each memory space four There is a cylinder, when accumulation layer is stacked and placed on into another accumulation layer, cylinder is used to be put against fixation at the corresponding position of interior angle The semiconductor single-tube laser being placed in the memory space of another accumulation layer.
Further, above-mentioned cuboid constitutes a rectangular element, outermost square with the "+" font boss on cuboid Shape unit is 1/2 cellular construction, and four azimuthal rectangular elements are 1/4 cellular construction, and 1/2 cellular construction is: It is half cuboid and half "+" font boss of rectangular element width described in 1/2 in longitudinal direction, is 1/2 in horizontal direction Half cuboid of the rectangular element length and half "+" font boss, 1/4 cellular construction are longitudinal direction and transverse direction side To 1/4 cuboid for being former rectangular element 1/2 and 1/4 "+" font boss.
Further, the gap between above-mentioned horizontal adjacent rectangle body forms and picks and places mouth, for picking and placeing semiconductor single tube Laser;The Cavity surface of semiconductor single-tube laser is located in the gap between the adjacent rectangle body of longitudinal direction.
Further, an angle of aforesaid substrate is one 45 degree of chamfering.
Further, there is at least one rectangular channel respectively near one group of position of relative edge in rectangular platform, and leans on The rectangular channel number of the rectangular channel number more than relative edge on side where nearly chamfering.
Further, there is the rectangular column corresponding with rectangular channel in the groove of aforesaid substrate lower surface, for it is another The rectangular channel of substrate is engaged.
Further, in rectangular platform, there are two spaces in the position near another group of relative edge, has for pasting There is the label of semiconductor single-tube laser information.
Further, the material of above-mentioned storage device is black antistatic plastic.
Further, the size of the semiconductor single-tube laser that aforesaid substrate, rectangular platform are stored with single accumulation layer and Number matches, and the size of memory space matches with the size of the semiconductor single-tube laser of storage.
Understood based on above-mentioned technical proposal, the storage device of semiconductor single-tube laser proposed by the present invention has and following has Beneficial effect:
1st, storage device proposed by the present invention, the gap between horizontal adjacent rectangle body forms and picks and places mouth, for taking Put semiconductor single-tube laser so that pick and place conveniently;The exiting surface of semiconductor single-tube laser is located at the adjacent of longitudinal direction during storage In gap between cuboid, can effectively prevent the exiting surface of laser with the contact of storage device, it is to avoid in gripping and The damage unnecessary to laser is caused during storage single-tube laser, the exiting surface such that it is able to be effectively protected single tube avoids producing Any damage of life, prevents spun gold from caving in the laser both positive and negative polarity short circuit for causing;
2nd, storage device proposed by the present invention, due in the groove of the lower surface of its substrate, with memory space interior angle phase Corresponding position has a cylinder, for fixing the semiconductor single-tube laser of another accumulation layer, so as to ensure that storage device exists Single-tube laser is not easy to move left and right in moving process, and the laser caused so as to further avoid exiting surface scratch is damaged With both positive and negative polarity short circuit;
3rd, storage device proposed by the present invention is stackable uses, using black antistatic material, can effective antistatic, can be big It is big cost-effective, and different single tube classification can be stored, it is unaffected each other;
4th, storage device proposed by the present invention can be supported the use with the fixed mount of bar bar the storage box.
Brief description of the drawings
Fig. 1 be one embodiment of the invention propose semiconductor single-tube laser storage device in single accumulation layer upper table Face structural representation;
Fig. 2 be one embodiment of the invention propose semiconductor single-tube laser storage device in single accumulation layer following table Face structural representation;
Fig. 3 be one embodiment of the invention propose semiconductor single-tube laser storage device in single accumulation layer upper table Face partial enlargement structural representation.
Specific embodiment
To make the object, technical solutions and advantages of the present invention become more apparent, below in conjunction with specific embodiment, and reference Accompanying drawing, the present invention is described in further detail.
The invention discloses a kind of storage device of semiconductor single-tube laser, formed by n accumulation layer is stacked, wherein n It is natural number, each accumulation layer has a substrate, wherein for each substrate:
The upper surface of substrate is formed with a rectangular platform, and rectangular platform upper surface has a dented space, in dented space Cuboid with horizontal and vertical periodic arrangement, has a wide "+" font isometric with cuboid convex on each cuboid Platform, three adjacent with correspondence at the position that each azimuth of cuboid, i.e. "+" font boss cave inward Be formed between "+" font boss one with cuboid be support, "+" font boss be spacing memory space so that each "+" Font boss surrounding is formed with four equal memory spaces, for storing semiconductor single-tube laser;
The lower surface of substrate have a groove being engaged with rectangular platform, and in groove with memory space each described Four interior angles have a cylinder at corresponding position, and when accumulation layer is stacked and placed on into another accumulation layer, cylinder is used for against solid Surely it is positioned over the semiconductor single-tube laser in the memory space of another accumulation layer.
Above-mentioned cuboid constitutes a rectangular element with the "+" font boss on cuboid, and outermost rectangular element is 1/2 cellular construction, and four azimuthal rectangular elements are 1/4 cellular construction, 1/2 cellular construction is:In longitudinal side It is rectangle described in 1/2 in horizontal direction to half cuboid for being rectangular element width described in 1/2 and half "+" font boss Half cuboid of element length and half "+" font boss, 1/4 cellular construction is that longitudinal direction and horizontal direction are original 1/4 cuboid of rectangular element 1/2 and 1/4 "+" font boss.
Preferably, the gap between above-mentioned horizontal adjacent rectangle body forms and picks and places mouth, swashs for picking and placeing semiconductor single tube Light device;The Cavity surface of semiconductor single-tube laser is located in the gap between the adjacent rectangle body of longitudinal direction, can effectively prevent laser The exiting surface of device and the contact of storage device, it is to avoid cause unnecessary to laser when gripping and storing single-tube laser Damage, the exiting surface such that it is able to effectively avoid single tube produces any damage, prevents spun gold from caving in and causes laser both positive and negative polarity Short circuit.
Wherein, an angle of aforesaid substrate is one 45 degree of chamfering, it is preferable that near one group of relative edge in rectangular platform Position there is at least one rectangular channel respectively, and where the chamfering side rectangular channel of the rectangular channel number more than relative edge Number.
There is the rectangular column corresponding with the rectangular channel in the groove of aforesaid substrate lower surface, for another substrate Rectangular channel is engaged.
Preferably, in rectangular platform, there are two spaces in the position near another group of relative edge, has for pasting The label of semiconductor single-tube laser information.
Preferably, the material of above-mentioned storage device is black antistatic plastic, can effectively prevent influence of the electrostatic to device.
Preferably, the size of aforesaid substrate, rectangular platform and the semiconductor single-tube laser that single accumulation layer is stored and individual Number matches, and the size of memory space matches with the size of the semiconductor single-tube laser of storage.
The storage device of semiconductor single-tube laser proposed by the present invention is retouched in detail below by way of specific embodiment State.
Embodiment
As Figure 1-3, the present embodiment proposes a kind of storage device of semiconductor single-tube laser, and the storage device is by n Individual accumulation layer is stacked to be formed, and wherein n is natural number, and (n-1)th upper surface of accumulation layer connects with the lower surface of n-th accumulation layer Touch.The schematic diagram of single accumulation layer is illustrated as, each accumulation layer is respectively provided with a substrate 1, wherein:
Be as shown in Figure 1 the structural representation of single accumulation layer upper surface, the size of substrate 101 for 101.6mm × 101.6mm × 4.8mm, a rectangular slab 102 is formed with the upper surface of substrate 101, its size be 91.4mm × 91.4mm × The border 5.1mm of 4mm, the rectangular slab 102 and substrate 101.The size of rectangular slab 102 determines that whole the storage box can be deposited Single tube number and whole the storage box size, it is also possible to the single tube number deposited as needed and size determine its chi Very little, it is big that the nitridation Aluminum Heat Sink COS that the size of the rectangular slab 102 that the present embodiment is proposed can deposit 100 MARUWA companies are encapsulated Power semiconductor single-tube laser.
At a jiao of substrate 101, a chamfering 103 is formed with, the chamfering is 45 degree, for the folded of two neighboring accumulation layer Assembling positioning is put, and beneficial to the dismounting of adjacent storage layers.
There is a dented space in the upper surface of rectangular slab 102, horizontal and vertical in this dented space is formed with cycle row The cuboid 104 of row, the cycle of horizontal direction is 6.4mm, and the cycle of longitudinal direction is 8.5mm, and the number of the cuboid 104 is 11×11;There is a "+" font boss 105 in the upper surface of each cuboid 104, its length and width is equal with cuboid 104, in square 106 three "+" adjacent with correspondence at the position that each azimuth of body, i.e. "+" font boss 105 cave inward Be formed between font boss one with cuboid 104 for support, "+" font boss 105 be spacing memory space 107 so that Each "+" font boss surrounding is formed with four equal memory spaces, and "+" font boss 105 caves inward in the present embodiment A position at 106 size be 1.2mm × 2.15mm × 0.5mm.Wherein each cuboid 104, "+" font thereon are convex Platform 105 forms a rectangular element, and the periphery of the cuboid of periodic arrangement is 1/2 rectangular element and four azimuthal rectangles Unit is 1/4 cellular construction.
In addition, semiconductor single-tube laser is stored in cuboid 104 as support, "+" font boss 105 are deposited for spacing In storage space 107.
The partial enlargement structural representation of single accumulation layer upper surface is illustrated in figure 3, from figure 3, it can be seen that laterally row There is the first gap 108, gap width is 2.4mm, for as mouth is picked and placeed, picking and placeing semiconductor list between the cuboid 104 of row Pipe laser;There is the second gap 109, the width in the second gap 109 is 1.8mm, storage between the cuboid 104 of longitudinal arrangement When, the Cavity surface of semiconductor single-tube laser is located in this gap.
Rectangular slab 102 is formed with one first rectangular channel 114 in the position near the first side 110, and a width of 55mm of its length × 2mm, has two Hes of the second rectangular channel 115 differed in size near the position on the second relative side 111 of the first rectangular channel 114 3rd rectangular channel 116, a width of 40mm × 2mm of length of the second rectangular channel 115, a width of 15mm × 2mm of length of the 3rd rectangular channel 116, Location fit when described first to the 3rd rectangular channel is superimposed up and down for accumulation layer.Near the 3rd side near rectangular slab 102 112 and the 4th side 113 position respectively have a space 117, this space can be with adhesive label, for marking single-tube laser Information, at the same by each cuboid 104 also can reference numerals, be easy to recognize, take.
Be illustrated in figure 2 the structural representation of single accumulation layer lower surface, the lower surface of substrate 101 with rectangular slab 102 There is a groove 201 at corresponding position, and the size of the groove 201 is 91.8mm × 91.8mm × 3.4mm, is being used When, the lower surface of single accumulation layer is placed in another accumulation layer, prevents single tube by outside contamination and damage;In groove 201 and square The corresponding position of the interior angle of each memory space 107 is formed with a small cylinder 202, the size of the cylinder on shape plate 102 It is φ 0.5mm × 1mm, the lower surface of single accumulation layer is placed on when in another accumulation layer, and cylinder 202 can effectively prevent single tube Laser is moved left and right in memory space 107, while it also avoid the single tube laser during groove 201 crushes another accumulation layer Device, prevents from causing the spun gold of single-tube laser to cave in, and causes the short circuit of laser both positive and negative polarity.In groove 201 with rectangular slab 102 on First rectangular channel 114 on surface, the second rectangular channel 115 and the corresponding position of the 3rd rectangular channel 116, are formed with size and match The first rectangular column 203, the second rectangular column 204 and the 3rd rectangular column 205, facilitate two neighboring accumulation layer to be superimposed up and down and use Shi Dingwei, prevents from occurring covering wrong phenomenon due to changing direction between the storage box.
The material that storage device is used in the present embodiment is black antistatic plastic, and economy and durability, simple structure, price is low It is honest and clean, can effectively ensure that high power semiconductor COS encapsulates the storage of single-tube laser, prevent to high power single-tube laser chamber The damage in face.Meanwhile, the storage box box combines together with lid, can stack and use, it is easy to store, and can greatly save cost and make Use space.Furthermore it is possible to be supported the use with the fixed mount of existing 4 inches of bar bar the storage box on the market, partly led for high power Body COS encapsulates the transport of single-tube laser.
Heretofore described size is directed to the high power semi-conductor single tube of the nitridation Aluminum Heat Sink COS encapsulation of MARUWA companies Depending on, it is not limited to the embodiment of this specific dimensional structure.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect Describe in detail bright, it should be understood that the foregoing is only specific embodiment of the invention, be not intended to limit the invention, it is all Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc. should be included in protection of the invention Within the scope of.

Claims (9)

1. a kind of storage device of semiconductor single-tube laser, is formed by n accumulation layer is stacked, and wherein n is natural number, and each is deposited Reservoir has a substrate, wherein for each substrate:
The upper surface of the substrate is formed with a rectangular platform, and the rectangular platform upper surface has a dented space, described recessed Falling into space has the cuboid of horizontal and vertical periodic arrangement, isometric wide with cuboid with one on each cuboid "+" font boss, at the position that each azimuth of the cuboid, i.e. described "+" font boss cave inward One is formed between three "+" font boss adjacent with correspondence to be limited by support, the "+" font boss of the cuboid The memory space of position, so that each described "+" font boss surrounding is formed with four equal memory spaces, it is described for storing Semiconductor single-tube laser;
The lower surface of the substrate have a groove being engaged with the rectangular platform, and in the groove with described in each There is a cylinder, when the accumulation layer is stacked and placed on into another accumulation layer, institute at the corresponding position of four interior angles of memory space Stating cylinder is used for against fixed placement in the semiconductor single-tube laser in the memory space of another accumulation layer.
2. the storage device of semiconductor single-tube laser as claimed in claim 1, it is characterised in that the cuboid and rectangle "+" font boss on body constitutes a rectangular element, and the outermost rectangular element is 1/2 cellular construction, and four Azimuthal rectangular element is 1/4 cellular construction.
3. the storage device of semiconductor single-tube laser as claimed in claim 1, it is characterised in that the horizontal adjacent square Gap between body forms and picks and places mouth, for picking and placeing the semiconductor single-tube laser;The semiconductor single-tube laser Cavity surface is located in the gap between longitudinal adjacent rectangle body.
4. the storage device of semiconductor single-tube laser as claimed in claim 1 a, it is characterised in that angle of the substrate It is one 45 degree of chamfering.
5. the storage device of semiconductor single-tube laser as claimed in claim 4, it is characterised in that in the rectangular platform There is at least one rectangular channel respectively near one group of position of relative edge, and it is big to be close to the rectangular channel number on side where the chamfering In the rectangular channel number of relative edge.
6. the storage device of semiconductor single-tube laser as claimed in claim 5, it is characterised in that the base lower surface There is the rectangular column corresponding with the rectangular channel in groove, be engaged for the rectangular channel with another substrate.
7. the storage device of semiconductor single-tube laser as claimed in claim 4, it is characterised in that in the rectangular platform On, there are two spaces in the position near another group of relative edge, there is the semiconductor single-tube laser information for pasting Label.
8. the storage device of semiconductor single-tube laser as claimed in claim 1, it is characterised in that the material of the storage device Expect to be black antistatic plastic.
9. the storage device of semiconductor single-tube laser as claimed in claim 1, it is characterised in that the substrate, rectangle are put down The size and number of the semiconductor single-tube laser that platform is stored with single accumulation layer match, and the size of the memory space with The size of the semiconductor single-tube laser of storage matches.
CN201611121055.3A 2016-12-07 2016-12-07 The storage device of semiconductor single-tube laser Expired - Fee Related CN106742604B (en)

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CN113682627A (en) * 2021-08-25 2021-11-23 苏州长光华芯光电技术股份有限公司 Storage device
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