CN106736937A - A kind of thinning processing method of ferroelectric material based on multi- scenarios method - Google Patents
A kind of thinning processing method of ferroelectric material based on multi- scenarios method Download PDFInfo
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- CN106736937A CN106736937A CN201611096371.XA CN201611096371A CN106736937A CN 106736937 A CN106736937 A CN 106736937A CN 201611096371 A CN201611096371 A CN 201611096371A CN 106736937 A CN106736937 A CN 106736937A
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- China
- Prior art keywords
- ferroelectric material
- thinning processing
- processing method
- scenarios
- material based
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/068—Table-like supports for panels, sheets or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
A kind of thinning processing method of ferroelectric material based on multi- scenarios method, applies reversed electric field during the thinning processing in ferroelectric material surface, reverse thermal field and chemical fields multi- scenarios method are acted on, the described method comprises the following steps：(1) Surface Machining ferroelectric material, emery wheel is with nsRotating speed, the feed speed of f is processed to ferroelectric material, and the rotating speed of ferroelectric material is nw；(2) reversed electric field, reverse thermal field and chemical fields, electric field, thermal field and chemical fields reciprocation are applied when processing.The present invention provides a kind of thinning processing method of the ferroelectric material based on multi- scenarios method for improving processing efficiency.
Description
Technical field
This invention relates generally to the thinning processing of material, more specifically but it is not limited to, is related to the surface of ferroelectric material to add
Work method.
Background technology
Ferroelectric material is used widely in fields such as Aeronautics and Astronautics, civilian photovoltaics, such as surface wave device, arrowband
Wave filter, sensor, photon tunable optic filter, acousto-optical device, optical gyroscope etc., particularly in Frequency Surface wave device,
SAW device under 2.5G, 3G standard can also replace ferroelectric material without other commercial materials, in being wireless telecommunications
Most important basic material.
Ferroelectric material is in process because the piezoelectricity that external load and thermal field collective effect have along with itself is imitated
Should and pyroelectric effect, it may appear that the positive and negative electrfic centre of molecule is separated from one another and produces polarization phenomena, and material surface can produce very strong
Electric field.Because ferroelectric material has piezoelectricity back wash effect again, electric field can produce internal stress.When internal stress is more than the strength of materials
When, without external load, crackle will be produced, and cause ferroelectric material damaged, reduce the machining yield of ferroelectric material.
Current ferroelectric material Surface-micromachining process, mainly selects processing method, ferroelectricity from material mechanical characteristic angle
The polarization characteristic and its back wash effect of material do not cause enough attention, and the electric field energy that polarization phenomena are produced is quite surprising, can
To complete the nuclear fusion process of neutron and helium ion under conditions of without the help of any external load and heat, carried without outside
Lotus, electric field is just enough to cause ferroelectric material damaged for the influence processed, therefore, study, develop a kind of based on multi- scenarios method
The thinning processing method of ferroelectric material is particularly necessary.
The content of the invention
In order to the processing efficiency for overcoming the shortcomings of the thinning processing method of existing ferroelectric material is relatively low, the present invention provides a kind of
Improve the thinning processing method of the ferroelectric material based on multi- scenarios method of processing efficiency.
In order to solve the above-mentioned technical problem following technical scheme is provided：
A kind of thinning processing method of ferroelectric material based on multi- scenarios method, applies reverse during the thinning processing in ferroelectric material surface
Electric field, the multi- scenarios method such as reverse thermal field and chemical fields, the described method comprises the following steps：
(1) Surface Machining ferroelectric material, emery wheel is with nsRotating speed, the feed speed of f is processed to ferroelectric material, ferroelectricity
The rotating speed of material is nw；
(2) reversed electric field is applied when processing, reverse thermal field and chemical fields etc. form electric field, many of thermal field and chemical fields etc.
Coupling reciprocation.
Further, the ferroelectric material is the functional material with ferroelectric phase, including lithium tantalate, lithium niobate, barium titanate or
Potassium dihydrogen phosphate etc..
Further, the ferroelectric material is shaped as Circular wafer shape.
Further, the Surface Machining of the step (1) is ground comprising vertical or horizontal end face.
Described abrasive wheel end face non-integral, the emery wheel block teeth of array adhesion setting thickness, the geometry of block teeth is heart
Or rectangle.
The ferroelectric material is sticked on basal disc.
Described basal disc is aluminium alloy or glass basal disc.
The basal disc is connected with vacuum cup.
The vacuum cup material includes porous ceramics.
The adhesion material includes paraffin.
Technology design of the invention is：The thining method of ferroelectric material is by applying reversed electric field, reverse thermal field and change
The interior electricity for learning the effect of the multi- scenarios methods such as field to offset the positive and negative charge produced due to polarization when ferroelectric material is processed and cause
The field risk damaged to ferroelectric material processing to reduce internal electric field, is favorably improved processing efficiency.In one embodiment,
Method of surface finish includes cross grinding, and rapidoprint includes the ferroelectric material that lithium tantalate is representative, and additional reversed electric field,
Reverse thermal field and chemical fields.
Beneficial effects of the present invention are：Improve processing efficiency.
Brief description of the drawings
Fig. 1 is according to the machining sketch chart of one embodiment of the invention.
Fig. 2 is according to additional multi- scenarios method action principle schematic diagram of the present invention.
Fig. 3 is according to the abrasive wheel end face schematic diagram of one embodiment of the invention.
Specific implementation method
The present invention will be further described below in conjunction with the accompanying drawings.
A kind of 1~Fig. 3 of reference picture, the thinning processing method of ferroelectric material based on multi- scenarios method, comprises the following steps：
(1) reference picture 1, vertical cross grinding processes ferroelectric material, and emery wheel 1 is with nsRotating speed, the feed speed of f is to tantalic acid
Lithium chip 2 is processed, and the rotating speed of lithium tantalate wafer 2 is nw。
(2) reference picture 2, apply reversed electric field 5, the processing method such as reverse thermal field 6 and chemical fields 7 during processing.
(3) emery wheel 1, reference picture 3, end face non-integral, array adheres to the emery wheel block 6 of diamond abrasive grain, emery wheel block
Geometry includes heart.Reference picture 2, the lithium tantalate wafer 2 is adhered on basal disc 3, and it is fixed that basal disc 3 is realized with vacuum cup 4
Position clamps.
(4) adherent fashion of the lithium tantalate wafer 2, is to be applied to the table of basal disc 3 in the paraffin of molten condition after being heated
Face, uniform adhesion treats that paraffin realizes adhesion on basal disc 3 after the exclusion bubble of lithium tantalate wafer 2.
The material of the vacuum cup 4 includes porous ceramics.
The ferroelectric material is the functional material with ferroelectric phase, and typical material includes lithium tantalate, lithium niobate, barium titanate,
Potassium dihydrogen phosphate etc..Ferroelectric material is shaped as wafer-like.
Described abrasive wheel end face non-integral, array adheres to certain thickness emery wheel block teeth, and the geometry of block teeth includes the heart
The shape such as shape and rectangle.
Ferroelectric material is sticked on basal disc, and the base-plate materials include aluminium alloy and glass basal disc, basal disc positioning clamping side
Formula includes with vacuum suction that in chuck described chuck materials include porous ceramics, and the adhesion material includes paraffin.
Can also be ground using horizontal end face in the step (1).
Reference picture 2, the applying reversed electric field of cross grinding, reverse thermal field and chemical fields offset ferroelectric material polarization to neutralize
The internal electric field of generation.
In this disclosure, many details are provided, thoroughly to understand embodiment of the present invention.But ability
Domain skilled artisan will realize that, the present invention can be without implementing on the premise of one or more detail.At other
In the case of, to avoid obscuring main points of the invention, do not provide or illustrate known details.
Furthermore, it is to be understood that although embodiment of the present invention is described by taking lithium tantalate as an example all the time, the present invention is not received
This limitation.One of ordinary skilled in the art of the invention can instruct to carry out the Surface Machining of other ferroelectric materials.
This example is not intended to limit protection scope of the present invention.
Claims (10)
1. the thinning processing method of a kind of ferroelectric material based on multi- scenarios method, it is characterised in that：The thinning processing in ferroelectric material surface
When apply reversed electric field, reverse thermal field and chemical fields multi- scenarios method are acted on, and be the described method comprises the following steps：
(1) Surface Machining ferroelectric material, emery wheel is with nsRotating speed, the feed speed of f is processed to ferroelectric material, ferroelectric material
Rotating speed be nw；
(2) reversed electric field, reverse thermal field and chemical fields, electric field, thermal field and chemical fields reciprocation are applied when processing.
2. the thinning processing method of a kind of ferroelectric material based on multi- scenarios method as claimed in claim 1, it is characterised in that：It is described
Ferroelectric material is the functional material with ferroelectric phase, including lithium tantalate, lithium niobate, barium titanate or potassium dihydrogen phosphate.
3. the thinning processing method of a kind of ferroelectric material based on multi- scenarios method as claimed in claim 1 or 2, it is characterised in that：
The ferroelectric material is shaped as Circular wafer shape.
4. the thinning processing method of a kind of ferroelectric material based on multi- scenarios method as claimed in claim 1 or 2, it is characterised in that：
The Surface Machining of the step (1) is ground comprising vertical or horizontal end face.
5. the thinning processing method of a kind of ferroelectric material based on multi- scenarios method as claimed in claim 1 or 2, it is characterised in that：
Described abrasive wheel end face non-integral, the emery wheel block teeth of array adhesion setting thickness, the geometry of block teeth is heart-shaped or rectangle.
6. the thinning processing method of a kind of ferroelectric material based on multi- scenarios method as claimed in claim 4, it is characterised in that：It is described
Ferroelectric material is sticked on substrate.
7. the thinning processing method of a kind of ferroelectric material based on multi- scenarios method as claimed in claim 6, it is characterised in that：It is described
Substrate be aluminium alloy or glass substrate.
8. the thinning processing method of a kind of ferroelectric material based on multi- scenarios method as claimed in claim 6, it is characterised in that：It is described
Substrate is connected with vacuum cup.
9. the thinning processing method of a kind of ferroelectric material based on multi- scenarios method as claimed in claim 7, it is characterised in that：It is described
Vacuum cup material includes porous ceramics.
10. the thinning processing method of a kind of ferroelectric material based on multi- scenarios method as claimed in claim 6, it is characterised in that：Institute
State adhesion material and include paraffin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611096371.XA CN106736937A (en) | 2016-12-02 | 2016-12-02 | A kind of thinning processing method of ferroelectric material based on multi- scenarios method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611096371.XA CN106736937A (en) | 2016-12-02 | 2016-12-02 | A kind of thinning processing method of ferroelectric material based on multi- scenarios method |
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| CN106736937A true CN106736937A (en) | 2017-05-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611096371.XA Pending CN106736937A (en) | 2016-12-02 | 2016-12-02 | A kind of thinning processing method of ferroelectric material based on multi- scenarios method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113103076A (en) * | 2021-04-13 | 2021-07-13 | 霖鼎光学(上海)有限公司 | Wafer polishing device based on inductively coupled plasma |
Citations (5)
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|---|---|---|---|---|
| US20040266095A1 (en) * | 2003-06-30 | 2004-12-30 | Sang-Hyun Oh | Method for manufacturing ferroelectric random access memory capacitor |
| CN102560617A (en) * | 2012-02-14 | 2012-07-11 | 中国科学院福建物质结构研究所 | Method for preparing ferroelectric single crystal lead indium niobate-lead titanate |
| JP2012204407A (en) * | 2011-03-23 | 2012-10-22 | Panasonic Corp | Manufacturing method of semiconductor memory device and semiconductor memory device |
| CN104752603A (en) * | 2014-12-31 | 2015-07-01 | 浙江工业大学 | Electric field energy offset effect based ferroelectric material surface ultra-precision machining method |
| CN105729251A (en) * | 2016-02-02 | 2016-07-06 | 浙江工业大学 | Ferroelectric material surface processing method based on additional symmetric electric field |
-
2016
- 2016-12-02 CN CN201611096371.XA patent/CN106736937A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040266095A1 (en) * | 2003-06-30 | 2004-12-30 | Sang-Hyun Oh | Method for manufacturing ferroelectric random access memory capacitor |
| JP2012204407A (en) * | 2011-03-23 | 2012-10-22 | Panasonic Corp | Manufacturing method of semiconductor memory device and semiconductor memory device |
| CN102560617A (en) * | 2012-02-14 | 2012-07-11 | 中国科学院福建物质结构研究所 | Method for preparing ferroelectric single crystal lead indium niobate-lead titanate |
| CN104752603A (en) * | 2014-12-31 | 2015-07-01 | 浙江工业大学 | Electric field energy offset effect based ferroelectric material surface ultra-precision machining method |
| CN105729251A (en) * | 2016-02-02 | 2016-07-06 | 浙江工业大学 | Ferroelectric material surface processing method based on additional symmetric electric field |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113103076A (en) * | 2021-04-13 | 2021-07-13 | 霖鼎光学(上海)有限公司 | Wafer polishing device based on inductively coupled plasma |
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Application publication date: 20170531 |