CN106736936A - A kind of thinning processing method of ferroelectric material based on applying pulsed magnetic field - Google Patents
A kind of thinning processing method of ferroelectric material based on applying pulsed magnetic field Download PDFInfo
- Publication number
- CN106736936A CN106736936A CN201611096365.4A CN201611096365A CN106736936A CN 106736936 A CN106736936 A CN 106736936A CN 201611096365 A CN201611096365 A CN 201611096365A CN 106736936 A CN106736936 A CN 106736936A
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- CN
- China
- Prior art keywords
- ferroelectric material
- magnetic field
- pulsed magnetic
- processing method
- thinning processing
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/068—Table-like supports for panels, sheets or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
It is a kind of that pulsed magnetic field is applied during the thinning processing in ferroelectric material surface based on the thinning processing method of ferroelectric material for applying pulsed magnetic field, the described method comprises the following steps：(1) Surface Machining ferroelectric material, emery wheel is with nsRotating speed, the feed speed of f is processed to ferroelectric material, and the rotating speed of ferroelectric material is nw；(2) pulsed magnetic field is applied when processing.The present invention provides a kind of thinning processing method of ferroelectric material based on applying pulsed magnetic field for improving processing efficiency.
Description
Technical field
This invention relates generally to the thinning processing of material, more specifically but it is not limited to, is related to the surface of ferroelectric material to add
Work method.
Background technology
Ferroelectric material is used widely in fields such as Aeronautics and Astronautics, civilian photovoltaics, such as surface wave device, arrowband
Wave filter, sensor, photon tunable optic filter, acousto-optical device, optical gyroscope etc., particularly in Frequency Surface wave device,
SAW device under 2.5G, 3G standard can also replace ferroelectric material without other commercial materials, in being wireless telecommunications
Most important basic material.
Ferroelectric material is in process because the piezoelectricity that external load and thermal field collective effect have along with itself is imitated
Should and pyroelectric effect, it may appear that the positive and negative electrfic centre of molecule is separated from one another and produces polarization phenomena, and material surface can produce very strong
Electric field.Because ferroelectric material has piezoelectricity back wash effect again, electric field can produce internal stress.When internal stress is more than the strength of materials
When, without external load, crackle will be produced, and cause ferroelectric material damaged, reduce the machining yield of ferroelectric material.
Current ferroelectric material Surface-micromachining process, mainly selects processing method, ferroelectricity from material mechanical characteristic angle
The polarization characteristic and its back wash effect of material do not cause enough attention, and the electric field energy that polarization phenomena are produced is quite surprising, can
To complete the nuclear fusion process of neutron and helium ion under conditions of without the help of any external load and heat, carried without outside
Lotus, electric field is just enough to cause ferroelectric material damaged for the influence processed, therefore, study, develop a kind of applying pulsed magnetic field
The thinning processing method of ferroelectric material is particularly necessary.
The content of the invention
In order to the processing efficiency for overcoming the shortcomings of the thinning processing method of existing ferroelectric material is relatively low, the present invention provides a kind of
Improve the thinning processing method of ferroelectric material based on applying pulsed magnetic field of processing efficiency.
In order to solve the above-mentioned technical problem following technical scheme is provided：
It is a kind of based on the thinning processing method of ferroelectric material for applying pulsed magnetic field, apply during the thinning processing in ferroelectric material surface
Pulsed magnetic field, the described method comprises the following steps：
(1) Surface Machining ferroelectric material, emery wheel is with nsRotating speed, the feed speed of f is processed to ferroelectric material, ferroelectricity
The rotating speed of material is nw；
(2) pulsed magnetic field is applied when processing.
Further, the ferroelectric material is the functional material with ferroelectric phase, and the ferroelectric material is lithium tantalate, niobic acid
Lithium, barium titanate or potassium dihydrogen phosphate etc..
Further, described ferroelectric material is shaped as wafer-like.
Further, the method for surface finish of the step (1) includes vertical cross grinding.
Described abrasive wheel end face non-integral, array adheres to certain thickness emery wheel block teeth, and the geometry of block teeth includes the heart
The shape such as shape and rectangle.
The ferroelectric material is sticked on substrate.
The material of described substrate includes aluminium alloy and glass substrate.
The substrate positioning clamping mode is included with vacuum suction in vacuum cup.
The material of described vacuum cup includes porous ceramics.
The adhesion material includes paraffin.
Technology design of the invention is：The method of surface finish of ferroelectric material is to produce outer power-up by applying pulsed magnetic field
Field reduces internal electric field pair come the internal electric field offset the positive and negative charge produced due to polarization when ferroelectric material is processed and cause
The damaged risk of ferroelectric material processing, is favorably improved processing efficiency.In one embodiment, method of surface finish includes end
Face is ground, and rapidoprint includes the ferroelectric material that lithium tantalate is representative, and applying pulse magnetic field.
Beneficial effects of the present invention are：The thinning processing efficiency of ferroelectric crystal is greatly improved.
Brief description of the drawings
Fig. 1 is according to the machining sketch chart of one embodiment of the invention.
Fig. 2 is according to pulsed magnetic field action principle schematic of the present invention.
Fig. 3 is according to the abrasive wheel end face schematic diagram of one embodiment of the invention.
Specific implementation method
The present invention will be further described below in conjunction with the accompanying drawings.
A kind of 1~Fig. 3 of reference picture, thinning processing method of ferroelectric material based on applying pulsed magnetic field is comprised the following steps：
(1) reference picture 1, vertical cross grinding processes ferroelectric material, and emery wheel 1 is with nsRotating speed, the feed speed of f is to tantalic acid
Lithium chip 2 is processed, and the rotating speed of lithium tantalate wafer 2 is nw。
(2) reference picture 2, apply pulsed magnetic field 5 during processing.
(3) emery wheel 1, reference picture 3, end face non-integral, array adheres to the emery wheel block 6 of diamond abrasive grain, emery wheel block
Geometry comprising heart, reference picture, 3, the lithium tantalate wafer 2 is adhered on substrate 3, and substrate 3 is realized with vacuum cup 4
Positioning is clamped.
(4) adherent fashion of the lithium tantalate wafer 2, is to be applied to the table of substrate 3 in the paraffin of molten condition after being heated
Face, uniform adhesion treats that paraffin realizes adhesion on substrate 3 after the exclusion bubble of lithium tantalate wafer 2.
The material of vacuum cup 4 includes porous ceramics.
Reference picture 2, it is interior with what ferroelectric material polarization was produced in the external electric field of the pulsed magnetic field generation of the applying of cross grinding
Electric field.
In this disclosure, many details are provided, thoroughly to understand embodiment of the present invention.But ability
Domain skilled artisan will realize that, the present invention can be without implementing on the premise of one or more detail.At other
In the case of, to avoid obscuring main points of the invention, do not provide or illustrate known details.
Furthermore, it is to be understood that although embodiment of the present invention is described by taking lithium tantalate as an example all the time, the present invention is not received
This limitation.One of ordinary skilled in the art of the invention can instruct to carry out the thinning processing of other ferroelectric materials.
It is exemplified below instantiation the present invention is expanded on further, it should be appreciated that example is not intended to limit guarantor of the invention
Shield scope.
Claims (10)
1. a kind of based on the thinning processing method of ferroelectric material for applying pulsed magnetic field, it is characterised in that：Ferroelectric material surface is thinning
Apply pulsed magnetic field during processing, the described method comprises the following steps：
(1) Surface Machining ferroelectric material, emery wheel is with nsRotating speed, the feed speed of f is processed to ferroelectric material, ferroelectric material
Rotating speed be nw；
(2) pulsed magnetic field is applied when processing.
2. as claimed in claim 1 based on the thinning processing method of ferroelectric material for applying pulsed magnetic field, it is characterised in that：It is described
Ferroelectric material is the functional material with ferroelectric phase, and the ferroelectric material is lithium tantalate, lithium niobate, barium titanate or biphosphate
Potassium.
3. as claimed in claim 1 or 2 based on the thinning processing method of ferroelectric material for applying pulsed magnetic field, it is characterised in that：
Described ferroelectric material is shaped as wafer-like.
4. as claimed in claim 1 or 2 based on the thinning processing method of ferroelectric material for applying pulsed magnetic field, it is characterised in that：
The method of surface finish of the step (1) is ground comprising vertical or horizontal end face.
5. as claimed in claim 1 or 2 based on the thinning processing method of ferroelectric material for applying pulsed magnetic field, it is characterised in that：
Described abrasive wheel end face non-integral, array adheres to certain thickness emery wheel block teeth, and the geometry of block teeth includes heart-shaped and rectangle
Etc. shape.
6. as claimed in claim 1 or 2 based on the thinning processing method of ferroelectric material for applying pulsed magnetic field, it is characterised in that：
The ferroelectric material is sticked on substrate.
7. as claimed in claim 6 based on the thinning processing method of ferroelectric material for applying pulsed magnetic field, it is characterised in that：It is described
Substrate material include aluminium alloy and glass substrate.
8. as claimed in claim 7 based on the thinning processing method of ferroelectric material for applying pulsed magnetic field, it is characterised in that：It is described
Substrate positioning clamping mode is included with vacuum suction in vacuum cup.
9. as claimed in claim 8 based on the thinning processing method of ferroelectric material for applying pulsed magnetic field, it is characterised in that：It is described
Vacuum cup material include porous ceramics.
10. as claimed in claim 6 based on the thinning processing method of ferroelectric material for applying pulsed magnetic field, it is characterised in that：Institute
State adhesion material and include paraffin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611096365.4A CN106736936A (en) | 2016-12-02 | 2016-12-02 | A kind of thinning processing method of ferroelectric material based on applying pulsed magnetic field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611096365.4A CN106736936A (en) | 2016-12-02 | 2016-12-02 | A kind of thinning processing method of ferroelectric material based on applying pulsed magnetic field |
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| Publication Number | Publication Date |
|---|---|
| CN106736936A true CN106736936A (en) | 2017-05-31 |
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| CN201611096365.4A Pending CN106736936A (en) | 2016-12-02 | 2016-12-02 | A kind of thinning processing method of ferroelectric material based on applying pulsed magnetic field |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101932971A (en) * | 2008-02-15 | 2010-12-29 | 南安普敦大学 | A process for poling a ferroelectric material doped with a metal |
| JP5239156B2 (en) * | 2006-12-20 | 2013-07-17 | 富士通株式会社 | Wiring forming method and semiconductor device |
| CN103264321A (en) * | 2013-05-29 | 2013-08-28 | 浙江工业大学 | Polishing method based on dielectrophoresis effect and dedicated equipment thereof |
| CN104551871A (en) * | 2014-12-31 | 2015-04-29 | 浙江工业大学 | Lithium tantalate wafer grinding method |
| CN105729251A (en) * | 2016-02-02 | 2016-07-06 | 浙江工业大学 | Ferroelectric material surface processing method based on additional symmetric electric field |
| CN106040161A (en) * | 2016-07-05 | 2016-10-26 | 中国人民大学 | Pyroelectric crystal particles and application, composite and screening method thereof |
-
2016
- 2016-12-02 CN CN201611096365.4A patent/CN106736936A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5239156B2 (en) * | 2006-12-20 | 2013-07-17 | 富士通株式会社 | Wiring forming method and semiconductor device |
| CN101932971A (en) * | 2008-02-15 | 2010-12-29 | 南安普敦大学 | A process for poling a ferroelectric material doped with a metal |
| CN103264321A (en) * | 2013-05-29 | 2013-08-28 | 浙江工业大学 | Polishing method based on dielectrophoresis effect and dedicated equipment thereof |
| CN104551871A (en) * | 2014-12-31 | 2015-04-29 | 浙江工业大学 | Lithium tantalate wafer grinding method |
| CN105729251A (en) * | 2016-02-02 | 2016-07-06 | 浙江工业大学 | Ferroelectric material surface processing method based on additional symmetric electric field |
| CN106040161A (en) * | 2016-07-05 | 2016-10-26 | 中国人民大学 | Pyroelectric crystal particles and application, composite and screening method thereof |
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Application publication date: 20170531 |