CN106735691A - A kind of molten tin device - Google Patents
A kind of molten tin device Download PDFInfo
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- CN106735691A CN106735691A CN201710144678.0A CN201710144678A CN106735691A CN 106735691 A CN106735691 A CN 106735691A CN 201710144678 A CN201710144678 A CN 201710144678A CN 106735691 A CN106735691 A CN 106735691A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/04—Heating appliances
- B23K3/047—Heating appliances electric
- B23K3/0475—Heating appliances electric using induction effects, e.g. Kelvin or skin effects
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- Health & Medical Sciences (AREA)
- Dermatology (AREA)
- General Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Induction Heating (AREA)
- Dc-Dc Converters (AREA)
Abstract
The present invention relates to induction heating technique field, a kind of molten tin device is disclosed.Including circuit board storehouse and high-frequency oscillating circuits, the high frequency oscillation circuit includes resonance circuit plate, resonance coil and afterflow inductance, the resonance circuit plate and afterflow inductance are arranged on inside circuit board storehouse, the resonance coil includes two second high frequency coils and the 3rd high frequency coil of series connection, one end of second high frequency coil and the 3rd high frequency coil is mutually threaded together to form tap, the tap and afterflow inductance detachable connection, the other end of second high frequency coil and the 3rd high frequency coil stretches into circuit board storehouse and resonance circuit plate detachable connection, the circuit board storehouse is hollow cylindrical shape.Resonance coil produces the voltage by sinusoidal rule change, and eddy heating for heating is carried out to the device in resonance coil, makes homogeneous heating, and energy loss is low.
Description
Technical field
The present invention relates to induction heating technique field, particularly a kind of molten tin device.
Background technology
Heat gun is that existing frequently-used chip removes welding equipment, and its flowing for passing through hot-air reaches the mesh of heat transfer
, its energy transmission mode limits its efficiency and heating surface (area) (HS；Hot-air flowing carry out the thermal losses of heat transfer compared with
Height, and heat it is uneven, can not be heated to larger area.Therefore, if can provide, a kind of small-sized heating surface (area) (HS is controllable, energy
Few firing equipment is lost in transmittance process, above-mentioned puzzlement will be solved, bring convenience to people's lives.
The content of the invention
The technical problems to be solved by the invention are：For above-mentioned problem, thermal losses is reduced, adapt to different area
Heating, there is provided a kind of molten tin device.
The technical solution adopted by the present invention is as follows：A kind of molten tin device, including circuit board storehouse and high-frequency oscillating circuits, it is described
High frequency oscillation circuit includes resonance circuit plate, resonance coil and afterflow inductance, and the resonance circuit plate and afterflow inductance are arranged on
Inside circuit board storehouse, the resonance coil includes two second high frequency coils and the 3rd high frequency coil of series connection, and described second is high
One end of frequency coil and the 3rd high frequency coil is mutually threaded together to form tap, the tap and the detachable company of afterflow inductance
Connect, the other end of second high frequency coil and the 3rd high frequency coil stretches into circuit board storehouse and the detachable company of resonance circuit plate
Connect, the circuit board storehouse is hollow cylindrical shape.
Further, the high frequency oscillation circuit specifically includes power supply, first resistor, second resistance, 3rd resistor, the 4th
Resistance, the first electric capacity, the first high frequency coil, the first transistor, transistor seconds, the first diode, the second diode, the three or two
Pole pipe, the 4th diode, the 5th diode, the 6th diode, the second high frequency coil, the 3rd high frequency coil, first high frequency
Coil is first end, first end, the electricity of the 4th resistance of afterflow inductance, the first end of the first resistor and the first high frequency coil
Source positive pole connection, the second end of the first resistor and the first end of second resistance, the second end of the first diode, the three or two pole
The first end of pipe, the connection of the control end of the first transistor, the of the second end of first high frequency coil and the second high frequency coil
Two ends, the first end connection of the 3rd high frequency coil, the second end of the 4th resistance and the second end, the six or two pole of 3rd resistor
The first end of pipe, the second end of the 4th diode, transistor seconds control end connection, the first end of first diode with
Second end end of the 3rd high frequency coil, the second end of the first electric capacity, the second end of the 5th diode, the first end of transistor seconds
Connection, the second end of the 6th diode and first end, the first end of the first electric capacity, second diode of the second high frequency coil
First end, the first end of the first transistor connection, the second end of the second resistance, the second end, first of the 3rd diode
Second end of transistor, the second end of the second diode, the first end of 3rd resistor, the first end of the 4th diode, the second crystalline substance
Power supply ground is accessed at second end of body pipe, the first end of the 5th diode.
Further, the high frequency oscillation circuit also includes protection circuit, and the protection circuit is coupled to feeder ear and the
Between the first end of one high frequency coil, including generating circuit from reference voltage and feedback control loop, the generating circuit from reference voltage bag
Parallel circuit and the 7th resistance are included, the parallel circuit includes the 7th Zener diode in parallel, the 8th resistance and the second electric capacity,
The first end ground connection of the parallel circuit, the second end of the parallel circuit couples the first end of the 7th resistance, the feedback loop
Road includes third transistor, the first amplifier, the second amplifier and the 9th resistance, and the first end coupling of the third transistor is supplied
Electric end, the second end of the third transistor couples the first end of the first high frequency coil, the control end coupling of the third transistor
The output end of the first amplifier is connect, the second input of first amplifier couples the second end of parallel circuit, described first
The first input end of amplifier couples the output end of the second amplifier, and the input of second amplifier couples the first high-frequency line
The first end of circle, the output end of second amplifier couples ground after coupling the 9th resistance, and the third transistor is field-effect
Transistor or MOS transistor or triode.
Further, the protection circuit also includes resistor network, comparator and discharge path, and the resistor network includes
Tenth resistance, the 11st resistance, the 12nd resistance and the 13rd resistance, the first end coupling feeder ear of the tenth resistance, institute
The second end for stating the tenth resistance couples coupling ground after the 11st resistance, the first end coupling feeder ear of the 12nd resistance, institute
State the 12nd resistance the second end couple the 13rd resistance after couple ground, the of the second end coupling comparator of the tenth resistance
One input, the second end of the 12nd resistance couples the second input of comparator, the discharge path control end coupling
To the comparator output terminal, the discharge path first end is coupled to the second input of the first amplifier, and the electric discharge is led to
Road first end is coupled to earth terminal.
Further, the discharge path include series connection N-MOS transistors and the 14th resistance, the comparator it is defeated
Go out the control end of end connection N-MOS transistors, the second end coupling ground of the N-MOS transistors, the of the N-MOS transistors
One end couples the first end of the 14th resistance, and the second end of the 14th resistance couples the second input of the first amplifier.
Further, the tenth resistance and the 12nd resistance are build-out resistor, and the temperature coefficient of the 11st resistance is big
In the temperature coefficient of the 13rd resistance, resistance of the resistance of the 11st resistance less than the 13rd resistance under normal temperature.
Further, the 3rd diode, the 4th diode are voltage-regulator diode, first diode, the two or two
Pole pipe, the 5th diode, the 6th diode are fast recovery diode.
Further, the first transistor and transistor seconds are field-effect transistor.
Further, the circuit board storehouse has aperture, and the aperture is provided with the switch of power supply in high frequency oscillation circuit.
Further, a diameter of 20mm of first high frequency coil, the second high frequency coil and the 3rd high frequency coil.
Further, the number of turn of first high frequency coil, the second high frequency coil and the 3rd high frequency coil is 5 circles.
In sum, by adopting the above-described technical solution, the beneficial effects of the invention are as follows：Overall structure is simple, use
It is convenient；When input is higher than 12 volts of voltage, can realize carrying out eddy heating for heating to the device in the first high frequency coil, it is to avoid pass through
Medium carries out the dissipation issues in heat transfer process；Afterflow inductance is that the first high frequency coil passes through removably with resonance coil
Connection, thus it is possible to vary the diameter of the first high frequency coil, you can the change heating surface (area) (HS of simple and flexible.
Brief description of the drawings
Fig. 1 is the structural representation of molten tin device of the invention.
Fig. 2 is the structural representation of high frequency oscillation circuit 200 of the invention.
Fig. 3 is dither circuit 300 structural representation of the present invention with protection circuit.
Fig. 4 is the structural representation of protection circuit of the present invention 400.
Fig. 5 is the structural representation of protection circuit 500 of the further optimization of protection circuit in Fig. 4.
Fig. 6 is the temperature adjustment curve of one embodiment of the invention.
Specific embodiment
The present invention is described further below in conjunction with the accompanying drawings.
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Such as Fig. 1, a kind of molten tin device, including circuit board storehouse 2 and high-frequency oscillating circuits, the high frequency oscillation circuit include humorous
Shaken circuit board, resonance coil 1 and afterflow inductance, and the resonance circuit plate and afterflow inductance are arranged on inside circuit board storehouse, described
Resonance coil 1 includes two the second high frequency coil L2 and the 3rd high frequency coil L3 of series connection, the second high frequency coil L2 and the
One end of three high frequency coil L3 is mutually threaded together to form tap, the tap and afterflow inductance detachable connection, and described the
The other end of two high frequency coil L2 and the 3rd high frequency coil L3 stretches into circuit board storehouse 2 and resonance circuit plate detachable connection, institute
It is hollow cylindrical shape to state circuit board storehouse.When high frequency coil works, the second high frequency coil L2 and the 3rd high frequency coil L3 sends out
Raw resonance, voltage is changed by sinusoidal rule, the device that just can be given in the second high frequency coil L2 and the 3rd high frequency coil L3
Carry out eddy heating for heating.The first high frequency coil L1, the second high frequency coil L2 and the 3rd high frequency coil L3 are copper cash composition.
As shown in Fig. 2 the high frequency oscillation circuit 200 specifically includes power supply, first resistor R1, second resistance R2, the 3rd
Resistance R3, the 4th resistance R4, the first electric capacity C1, the first high frequency coil L1, the first transistor Q1, transistor seconds Q2, the one or two
Pole pipe D1, the second diode D2, the 3rd diode D3, the 4th diode D4, the 5th diode D5, the 6th diode D6, second
High frequency coil L2, the 3rd high frequency coil L3；First end, the 4th of the first end of the first resistor R1 and the first high frequency coil L1
The first end of resistance R4, positive source connection, second end of the first resistor R1 and first end, the one or two of second resistance R2
Second end of pole pipe D1, the first end of the 3rd diode D3, the connection of the control end of the first transistor Q1, first high frequency coil
Second end of L1 is connected with second end of the second high frequency coil L2, the first end of the 3rd high frequency coil L3, the 4th resistance R4
Second end of the second end and 3rd resistor R3, first end of the 6th diode D6, second end of the 4th diode D4, second brilliant
The control end connection of body pipe Q2, the first end of the first diode D1 and the second end end of the 3rd high frequency coil L3, the first electricity
Hold the second end, second end of the 5th diode D5, the first end connection of transistor seconds Q2 of C1, the 6th diode D6's
The first end of the second end and the second high frequency coil L2, the first end of the first electric capacity C1, the first end of the second diode D2, the first crystalline substance
The first end connection of body pipe Q1, second end of the second resistance R2, second end of the 3rd diode D3, the first transistor Q1
Second end, second end of the second diode D2, the first end of 3rd resistor R3, the first end of the 4th diode D3, the second crystal
Power supply ground is accessed at second end of pipe Q2, the first end of the 5th diode D5.Because no any two element is duplicate,
One of transistor such as the first transistor Q1 is faster than what another transistor seconds Q2 was opened, and more electric currents will flow through
The first transistor Q1.By turn on side resonance coil electric current by the control end voltage pull-down of opposite side transistor seconds Q2 simultaneously
Begin to turn off it.And there is electric current in the 3rd inductance L3 being now connected with transistor seconds Q2, due to the 3rd high frequency coil
Electric current in L3 can not be mutated, now by produce high potential that the first transistor Q1 is reached by the second high frequency coil L2 first
End, originally because the transistor seconds Q2 that the first transistor Q1 conductings are turned off leads again by the high potential that the 3rd inductance L3 is produced
It is logical, and now the first transistor Q1 can then be closed, then the second inductance L2 can produce high potential again, and there is electric current, so anti-
It is multiple then form high frequency oscillation.Therefore, there is LC resonance and voltage is changed by sinusoidal rule in the first electric capacity C1 and resonance coil.
The circuit board storehouse has aperture 3, and the aperture 3 is provided with the switch of power supply in high frequency oscillation circuit.
The first high frequency coil L1, a diameter of 20mm of the second high frequency coil L2 and the 3rd high frequency coil L3, described
One high frequency coil L1, the number of turn of the second high frequency coil L2 and the 3rd high frequency coil L3 are 5 circles.
The structural representation of high frequency oscillation circuit 300 according to an embodiment of the invention as illustrated in FIG. 3, and shown in Fig. 2
High frequency oscillation circuit 200 compare, the high frequency oscillation circuit 200 also include protection circuit 400, as shown in figure 4, the protection
Circuit 400 is coupled between the first end of feeder ear and the first high frequency coil L1, including generating circuit from reference voltage and feedback loop
Road, the generating circuit from reference voltage includes parallel circuit and the 7th resistance R7, and the parallel circuit includes that in parallel the 7th is neat
Receive diode D7, the 8th resistance R8 and the second electric capacity C2, the first end ground connection of the parallel circuit, the second of the parallel circuit
The first end of the 7th resistance R7 of end coupling, the second end coupling feeder ear VCC of the 7th resistance R7, the feedback control loop includes
Third transistor Q3, the first amplifier AM1, the second amplifier AM2 and the 9th resistance R9, the first end of the third transistor Q3
Second end of coupling feeder ear VCC, the third transistor Q3 couples the first end of the first high frequency coil L1, the 3rd crystal
The control end of pipe Q3 couples the output end of the first amplifier AM1, the second input coupling electricity in parallel of the first amplifier AM1
Second end on road, the first input end of the first amplifier AM1 couples the output end of the second amplifier AM2, and described second puts
The input of big AM2 devices couples the first end of the first high frequency coil L1, the electricity of output end coupling the 9th of the second amplifier AM2
Ground is coupled after resistance R9, the third transistor Q3 is field-effect transistor or MOS transistor or triode, and wherein MOS is brilliant
The preferred P channel MOS transistor of body pipe.The generating circuit from reference voltage produces reference voltage VREF, the third transistor Q3
Current limit by identified current values such as reference voltage VREF, the 9th resistance R9.The second amplifier AM2 is put for electric current
Big device, the electric current of measurement third transistor Q3, multiplication factor is set to A, and the output end of the second amplifier AM2 connects the 9th resistance
R9, then the voltage of the 9th resistance R9 one end can be expressed as
VR9=A*IQ3*R9 （1）
Wherein IQ3 is the electric current of third transistor Q3, and the R9 is the resistance of the 9th resistance.At steady state, first amplifies
The voltage of second input of device AM1 is fixed as reference voltage VREF, and the voltage of the input of the second amplifier AM2 is brilliant with the 3rd
Body pipe Q3 electric currents and change and first end less than the first amplifier AM1 reference voltage VREF, third transistor Q3 keeps most
Small conducting resistance.When the reasons such as circuit failure cause the electric current IQ3 of third transistor Q3 to increase, according to formula（1）,
The voltage of the first input end of the first amplifier AM1 also begins to increase and move closer to reference voltage VREF, the first amplifier AM1
The output end voltage also conducting resistance of increase third transistor Q3 therewith, and then by the maximum current stabilization of third transistor Q3
IQ3=VREF/ (A*R9) （2）
In system shutdown procedures, the 8th resistance R8 discharges the second electric capacity C2, and the voltage on the second electric capacity C2 is 0.In system
After electricity, feeder ear VCC is charged by the 7th resistance R7 to the second electric capacity C2 so that the voltage on the second electric capacity C2 is slow by 0
It is gradually increased to reference voltage VREF.According to formula 2, the electric current IQ3 of third transistor Q3 is also gradually increased to VREF/ by 0
(A*R9).That is, the protection circuit 400 shown in Fig. 4 can not only protect the overcurrent in running, can also be in start-up course
In soft start is carried out to device.Protection circuit 400 has soft start and overcurrent protection function, can prevent high frequency oscillation circuit
Electric current is excessive in 300 start-up courses or when running causes equipment to burn out.
The protection circuit 400 further comprises resistor network, comparator and discharge path DS, is designated as protection circuit
500, the resistor network includes the tenth resistance R10, the 11st resistance R11, the 12nd resistance R12 and the 13rd resistance R13, institute
The second end for stating first end coupling the feeder ear VCC, the tenth resistance R10 of the tenth resistance R10 couples the 11st resistance R11 couplings
Ground connection, the second end coupling the tenth of first end coupling the feeder ear VCC, the 12nd resistance R12 of the 12nd resistance R12
Ground is coupled after three resistance R13, second end of the tenth resistance R10 couples the first input end of comparator CM1, the described 12nd
Second end of resistance R12 couples second input of comparator CM1, and the discharge path DS includes the N-MOS transistors of series connection
With the 14th resistance R14, the control end of the output end connection N-MOS transistors of the comparator CM1, the N-MOS transistors
The second end coupling ground, the first end of the N-MOS transistors couples the first end of the 14th resistance R14, the 14th electricity
The second end for hindering R14 couples second input of the first amplifier AM1.The resistor network reduces power-supply fluctuation to protection electricity
The influence on road 500, the discharge path DS is used to discharge the second electric capacity C2.
In one embodiment, the tenth resistance R10 and the 12nd resistance R12 is the equal build-out resistor of resistance（Temperature is special
Property is identical）, the temperature coefficient of the temperature coefficient more than the 13rd resistance R13 of the 11st resistance R11, i.e., when temperature is raised, the tenth
One resistance R11 resistances increase characteristic is more obvious.Under normal temperature, the resistance of the 11st resistance R11 is slightly less than the 13rd resistance R13's
Resistance exports low level to ensure comparator CM1, and discharge path DS is remained turned-off, i.e., do not produce influence to other circuits.Work as temperature
When degree is increased to design temperature, because the 11st resistance R11 resistances increase more, the voltage of the first input end of comparator CM1
The voltage of its second input will be exceeded, comparator CM1 will export high level, and discharge path DS starts to put the second electric capacity C2
Electricity, the second input terminal voltage reduction of the first amplifier AM1.
According to formula（2）, due to the voltage reduction of second input of the first amplifier AM1, by third transistor Q3
Electric current IQ3 be gradually lowered, and then cause device temperature reduction.With temperature reduction, due to the 11st resistance R11 resistances drop
Low, the voltage of the first input end of comparator CM1 is also reduced, and when device temperature is reduced enough to low, comparator CM1 will again
It is low level to overturn, and discharge path DS is closed.Then, feeder ear VCC begins through the 7th resistance R7 and the second electric capacity C2 is charged,
The voltage of second input of the first amplifier AM1 is raised, and also begins to raise by the electric current IQ3 of third transistor Q3.Wherein
One embodiment, comparator CM1 can select hysteresis comparator.
Fig. 6 shows to include the temperature adjustment curve of the higher-order of oscillation electrical equipment embodiment of protection circuit 500 according to this, wherein horizontal
Axle is time (T), and the longitudinal axis is electric current（I）.In Fig. 6,
IC2= VC2/(A*R9) （3）
Wherein VC2 is voltage on the second electric capacity C2.It is assumed that during system worked well, the electric current of third transistor Q3 is less than system
Maximum current（I.e. system power is not up to maximum, VC2<VREF, IC2<VREF/(A*R9)）.It is assumed that due to now load current
Larger, device temperature is persistently raised, the T1 moment, and device temperature reaches design temperature, and discharge path DS starts to the second electric capacity C2
Electric discharge, voltage VC2 starts to reduce on the second electric capacity C2.Due to equipment and undercapacity work, i.e. the electric current IQ3 of third transistor Q3
Maximum and not up to maximum, T1 to the T2 moment, although voltage VC2 is gradually reduced on the second electric capacity C2, but third transistor
The upper electric current IQ3 of Q3 do not reduce.At the T2 moment, voltage is reduced to sufficiently small, electricity on third transistor Q3 on the second electric capacity C2
Stream IQ3 starts to reduce with the voltage VC2 of the second electric capacity C2, and system temperature starts to reduce.T3 moment, system temperature is near enough
Low level, comparator CM1 upsets are low level, and discharge path DS stops discharging the second electric capacity C2, and feeder ear VCC starts to lead to
Cross the 7th resistance R7 to charge the second electric capacity C2, the terminal voltages of amplifier AM1 first are raised, by the electric current of third transistor Q3
IQ3 also begins to raise.At the T4 moment, start to recover to normal level by the electric current IQ3 of Q3.T5 moment, the electricity of the second electric capacity C2
Pressure VC2 recovers to maximum voltage VREF.It should be noted that because discharge path DS and the 7th resistance R7 fill to the second electric capacity C2
Discharge rate is inconsistent, and electric current IQ3 declines and the speed for rising are likely to inconsistent on the 3rd crystal Q3.
By Fig. 6 it is recognised that the protection circuit 500 shown in Fig. 5 can cause temperature smooth variation within the specific limits,
Rather than frequently switch on machine or sometimes hot and sometimes cold.Thus, those skilled in the art can be by rationally setting the tenth resistance R10, the
11 resistance R11, the ratio of the 12nd resistance R12 and the 13rd resistance R13, to the speed of the second electric capacity C2 discharge and recharges, and then
By the temperature stabilization of the device within the specific limits, constant temperature purpose is reached.For example, stabilization is between 280 ~ 300 degree.
It is pointed out that those skilled in the art can rationally set the tenth resistance with teaching of the invention
R10, the 11st resistance R11, the resistance of the 12nd resistance R12 and the 13rd resistance R13, ratio and temperature characterisitic are to complete this
The purpose of invention, such as temperature coefficient by the temperature coefficient of the tenth resistance R10 less than the 12nd resistance R12, and not necessarily is such as
The 11st resistance R11 is set to temperature coefficient higher than the 13rd resistance R13 described in embodiment.These are all not depart from this hair
Bright protection domain.
The invention is not limited in foregoing specific embodiment.The present invention is expanded to and any in this manual disclosed
New feature or any new combination, and disclose any new method or process the step of or any new combination.If this
Art personnel, are altered or modified the unsubstantiality that spirit of the invention done is not departed from, and should all belong to power of the present invention
The claimed scope of profit.
Claims (10)
1. a kind of molten tin device, it is characterised in that including circuit board storehouse and high-frequency oscillating circuits, the high frequency oscillation circuit includes
Resonance circuit plate, resonance coil and afterflow inductance, the resonance circuit plate and afterflow inductance are arranged on inside circuit board storehouse, described
Resonance coil includes two second high frequency coils and the 3rd high frequency coil of series connection, second high frequency coil and the 3rd high-frequency line
One end of circle is mutually threaded together to form tap, the tap and afterflow inductance detachable connection, second high frequency coil
Circuit board storehouse and resonance circuit plate detachable connection are stretched into the other end of the 3rd high frequency coil, the circuit board storehouse is hollow
Cylindrical shape.
2. molten tin device as claimed in claim 1, it is characterised in that the high frequency oscillation circuit include power supply, first resistor,
Second resistance, 3rd resistor, the 4th resistance, the first electric capacity, the first high frequency coil, the first transistor, transistor seconds, the one or two
Pole pipe, the second diode, the 3rd diode, the 4th diode, the 5th diode, the 6th diode, the second high frequency coil, the 3rd
High frequency coil, first high frequency coil is afterflow inductance, the first end of the first resistor and the first of the first high frequency coil
End, the connection of the first end of the 4th resistance, positive source, the second end of the first resistor and first end, first of second resistance
Second end of diode, the first end of the 3rd diode, the connection of the control end of the first transistor, the of first high frequency coil
Two ends are connected with the second end of the second high frequency coil, the first end of the 3rd high frequency coil, the second end of the 4th resistance and the
Second end of three resistance, the first end of the 6th diode, the second end of the 4th diode, the control end connection of transistor seconds,
The first end of first diode and the second end end of the 3rd high frequency coil, the second end of the first electric capacity, the 5th diode
Second end, the first end connection of transistor seconds, the second end of the 6th diode and the first end of the second high frequency coil, the
The first end of one electric capacity, the first end of the second diode, the connection of the first end of the first transistor, the second of the second resistance
End, the second end of the 3rd diode, the second end of the first transistor, the second end of the second diode, the first end of 3rd resistor,
The first end of the 4th diode, the second end of transistor seconds, the first end of the 5th diode access power supply ground.
3. tin device is melted as claimed in claim 2, it is characterised in that：Also include protection circuit, the protection circuit is coupled to
Between the first end of feeder ear and the first high frequency coil, including generating circuit from reference voltage and feedback control loop, the reference voltage
Producing circuit includes parallel circuit and the 7th resistance, and the parallel circuit includes the 7th Zener diode, the 8th resistance in parallel
With the second electric capacity, the first end of the parallel circuit is grounded, and the second end of the parallel circuit couples the first end of the 7th resistance,
The second end coupling feeder ear of the 7th resistance, the feedback control loop includes that third transistor, the first amplifier, second are amplified
Device and the 9th resistance, the first end coupling feeder ear of the third transistor, the second end coupling first of the third transistor
The first end of high frequency coil, the control end of the third transistor couples the output end of the first amplifier, first amplifier
The second input couple the second end of parallel circuit, the first input end of first amplifier couples the defeated of the second amplifier
Go out end, the input of second amplifier couples the first end of the first high frequency coil, the output end coupling of second amplifier
Ground is coupled after connecing the 9th resistance, the third transistor is field-effect transistor or MOS transistor or triode.
4. tin device is melted as claimed in claim 3, it is characterised in that the protection circuit also includes resistor network, comparator
And discharge path, the resistor network includes the tenth resistance, the 11st resistance, the 12nd resistance and the 13rd resistance, described the
The first end coupling feeder ear of ten resistance, the second end of the tenth resistance couples ground, the described tenth after coupling the 11st resistance
The first end coupling feeder ear of two resistance, the second end of the 12nd resistance couples and couple after the 13rd resistance ground, and described the
Second end of ten resistance couples the first input end of comparator, and the second of the second end coupling comparator of the 12nd resistance is defeated
Enter end, the discharge path control end is coupled to the comparator output terminal, and the discharge path first end is coupled to first and puts
Second input of big device, the discharge path first end is coupled to earth terminal.
5. tin device is melted as claimed in claim 4, it is characterised in that the tenth resistance and the 12nd resistance are matching electricity
Resistance, more than the temperature coefficient of the 13rd resistance, the resistance of the 11st resistance is less than the under normal temperature for the temperature coefficient of the 11st resistance
The resistance of 13 resistance.
6. tin device is melted as claimed in claim 4, it is characterised in that the discharge path includes the N-MOS transistors of series connection
With the 14th resistance, the control end of the output end connection N-MOS transistors of the comparator, the second of the N-MOS transistors
End coupling ground, the first end of the N-MOS transistors couples the first end of the 14th resistance, the second end of the 14th resistance
Couple the second input of the first amplifier.
7. molten tin device as claimed in claim 3, the 3rd diode, the 4th diode are voltage-regulator diode, described the
One diode, the second diode, the 5th diode, the 6th diode are fast recovery diode；The first transistor and the second crystal
Pipe is field-effect transistor or MOS transistor.
8. tin device is melted as claimed in claim 1, it is characterised in that the circuit board storehouse has aperture, the aperture is set
The switch of power supply in high frequency oscillation circuit.
9. molten tin device as claimed in claim 1, it is characterised in that first high frequency coil, the second high frequency coil and the
A diameter of 20mm of three high frequency coils.
10. molten tin device as claimed in claim 1, it is characterised in that first high frequency coil, the second high frequency coil and the
The number of turn of three high frequency coils is 5 circles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710144678.0A CN106735691B (en) | 2017-03-13 | 2017-03-13 | Tin melting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710144678.0A CN106735691B (en) | 2017-03-13 | 2017-03-13 | Tin melting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106735691A true CN106735691A (en) | 2017-05-31 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113820666A (en) * | 2021-08-02 | 2021-12-21 | 西安电子科技大学 | Radio frequency front end transmitting module and phased array radar front end chip |
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| CN106735691B (en) | 2022-11-08 |
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