CN106714439B - Device and method for eliminating microsphere surface static electricity - Google Patents
Device and method for eliminating microsphere surface static electricity Download PDFInfo
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- CN106714439B CN106714439B CN201611235616.2A CN201611235616A CN106714439B CN 106714439 B CN106714439 B CN 106714439B CN 201611235616 A CN201611235616 A CN 201611235616A CN 106714439 B CN106714439 B CN 106714439B
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- microsphere
- resonant cavity
- static electricity
- radio frequency
- quartz resonant
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- 239000004005 microsphere Substances 0.000 title claims abstract description 76
- 230000003068 static effect Effects 0.000 title claims abstract description 49
- 230000005611 electricity Effects 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000010453 quartz Substances 0.000 claims abstract description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 150000002500 ions Chemical class 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 22
- 238000007789 sealing Methods 0.000 claims description 15
- 230000000694 effects Effects 0.000 claims description 8
- 238000000605 extraction Methods 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 230000003472 neutralizing effect Effects 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 4
- 238000005086 pumping Methods 0.000 abstract description 4
- 238000010301 surface-oxidation reaction Methods 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000001307 helium Substances 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000003379 elimination reaction Methods 0.000 description 4
- 230000008030 elimination Effects 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
- H05F3/00—Carrying-off electrostatic charges
- H05F3/04—Carrying-off electrostatic charges by means of spark gaps or other discharge devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
Abstract
The invention discloses a device and a method for eliminating static electricity on the surface of a microsphere, which solve the problem that impurities are introduced to cause the surface oxidation of the microsphere when the traditional device for eliminating the static electricity on the surface of the microsphere is carried out under the atmosphere, and adopts the following technical scheme: the device for eliminating the static electricity on the microsphere surface comprises a quartz resonant cavity and an antenna coiled on the outer side of the quartz resonant cavity, wherein the antenna is coil-type and is connected with a radio frequency matching network; the outside of the quartz resonant cavity is provided with a vacuum measuring resistance unit, an ionization unit, a vacuum pumping hole, an air inlet and a grounding position. Firstly, preparing microspheres in a tray, and placing the tray in a quartz resonant cavity; secondly, vacuumizing the quartz resonant cavity, and then introducing discharge gas; and then, starting a radio frequency power supply, and providing a radio frequency signal for the antenna by the radio frequency matching network to generate plasma, wherein ions and electrons in the plasma are respectively neutralized with negative charges and positive charges on the surface of the microsphere, so that the aim of eliminating static electricity is fulfilled.
Description
Technical Field
The invention relates to a device and a method for eliminating static electricity on the surface of a microsphere.
Background
In Inertial Confinement Fusion (ICF) scientific research, microspheres with GDP (CH polymer) coatings are selected as the first choice of deuterium-tritium fuel containers and ablative layers in laser ICF physical experiments because of their high strength, good surface finish, high infrared transmittance and other advantages. In the preparation process of the GDP microsphere, in order to obtain the GDP microsphere with high surface smoothness and uniform coating thickness, the microsphere needs to roll randomly in plasma glow in the process of coating CH polymer, namely, an inclined microsphere tray is driven to rotate by a stepping motor, and the microsphere is placed in the tray to roll randomly under the combined action of gravity and friction force. This is already achieved in the patent with publication number CN201552114U, entitled tilting microsphere rolling device. However, in the initial stage of coating CH polymers, the surface of the microspheres often attracts or repels each other between the microspheres and the tray, and between the microspheres due to static electricity carried on the surface, thereby affecting the rolling effect of the microspheres. In addition, electrostatic effects can negatively affect the transportation, fuel loading, etc. of the GDP microspheres before and after they are formed into finished products.
Conventional GDP microsphere surface static elimination methods are typically performed at atmospheric pressure. For example, patent document publication No. CN 102484358A discloses a static eliminator for eliminating static electricity of a charged object by positive and negative ion airflows. Patent document publication No. CN101031178A discloses a plasma discharge point electrostatic eliminator of dielectric barrier discharge plasma, and the like. The solution disclosed in the above document can eliminate static electricity on the surface of the GDP microspheres, but at the same time introduce impurities into the GDP microspheres. And these schemes are all carried out at normal pressure, and thus lead to oxidation of the surface of the GDP microspheres. These factors all lead to great hydrodynamic instability when the laser irradiates the ICF target pellet, which seriously affects the experimental results.
Disclosure of Invention
The invention provides a device for eliminating static electricity on the surface of a microsphere, which solves the problems that impurities are introduced and the surface of the microsphere is oxidized when the traditional device for eliminating static electricity on the surface of the microsphere is carried out under the atmosphere.
The technical scheme adopted for solving the technical problems is as follows: the device for eliminating the static electricity on the microsphere surface comprises a quartz resonant cavity and an antenna coiled on the outer side of the quartz resonant cavity, wherein the antenna is coil-type and is connected with a radio frequency matching network; the outside of the quartz resonant cavity is provided with a vacuum measuring resistance unit, an ionization unit, a vacuum extraction opening, an air inlet and a grounding position.
Further is: the quartz resonant cavity comprises a cylindrical cavity wall, an upper sealing cover and a lower sealing cover which are connected to two ends of the cavity wall, the resistor unit, the ionization unit and the air inlet are arranged on the upper sealing cover, and the grounding position and the vacuum extraction opening are arranged on the lower sealing cover.
Further is: and a gate valve is further arranged on the vacuum extraction opening.
Further is: the center of the antenna is positioned on the axis of the quartz resonant cavity.
Further is: and a sample support is further arranged in the quartz resonant cavity, and a tray is arranged on the sample support.
The invention also provides a method for eliminating the static electricity on the surface of the microsphere by any device for eliminating the static electricity on the surface of the microsphere, which comprises the following steps:
firstly, disposing a microsphere sample in a tray, and placing the tray in a quartz resonant cavity;
step two, vacuumizing the quartz resonant cavity, and then introducing discharge gas into the quartz resonant cavity, wherein the discharge gas does not chemically react with the microsphere sample to be treated, and the discharge gas does not chemically react with the microsphere sample to be treated after dissociation;
step three, turning on a radio frequency power supply, providing radio frequency signals to an antenna through a radio frequency matching network, and determining the duration of the application of the radio frequency signals according to the plasma etching effect generated by the selected discharge gas; generating plasma in the quartz resonant cavity, exposing the microsphere sample in a plasma environment, and respectively neutralizing ions and electrons in the plasma with negative charges and positive charges on the surface of the microsphere to be treated;
and fourthly, repeating the third step until the static electricity on the surface of the microsphere is eliminated.
Specifically: in the second step, the quartz resonant cavity is vacuumized to make the air pressure of the quartz resonant cavity lower than 1 x 10 - 3 Pa; and then introducing discharge gas into the quartz resonant cavity to ensure that the air pressure of the quartz resonant cavity is 20-40Pa.
Specifically: in the third step, the discharge gas is hydrogen or inert gas. Wherein the inert gas is helium, argon, etc.
Specifically: in the third step, the radio frequency signal is generated by a radio frequency generation source, and the frequency of the radio frequency signal is 13.56MHz, 27.12MHz or 40.68MHz.
Specifically: in the third step, the duration of the application of the radio frequency signal is not more than 60 seconds. The application time of the radio frequency signal is the static electricity eliminating treatment time, and the static electricity eliminating treatment adopts a time period of 60 seconds or less, so that the etching effect of plasma on the microsphere surface in the static electricity eliminating process can be reduced.
Specifically: and secondly, introducing discharge gas into the quartz resonant cavity by using a gas flow controller, wherein the flow rate of the discharge gas is 10-20ml/min.
The beneficial effects of the invention are as follows: the static neutralization speed is high, the coating of the microsphere by the plasma environment is comprehensive and uniform, the static elimination effect is thorough, the sample is prevented from being oxidized by the vacuum environment treatment, no impurity component enters the surface layer of the sample in the static elimination process, and the device for eliminating the static on the surface of the microsphere has the characteristics of simple structure and stable operation, and the method for eliminating the static on the surface of the microsphere has the characteristic of convenient operation.
Drawings
FIG. 1 is a schematic structural diagram of an apparatus for eliminating static electricity on the surface of microspheres according to the present invention.
FIG. 2 is a schematic process diagram of the method for eliminating static electricity on the surface of microspheres according to the invention.
Parts, parts and numbers in the figures: the device comprises a quartz resonant cavity 1, an upper sealing cover 2, a resistor unit 3, an ionization unit 4, a lower sealing cover 5, an air inlet 6, a grounding position 7, a sample support 8, a tray 9, an antenna 10, a radio frequency matching network 11, a vacuum pumping port 12 and a gate valve 13.
Detailed Description
The invention is further described below with reference to the drawings and examples.
As shown in FIG. 1, the device for eliminating the static electricity on the surface of the microsphere comprises a quartz resonant cavity 1 and an antenna 10 coiled on the outer side of the quartz resonant cavity 1, wherein the antenna 10 is coil-type and is connected with a radio frequency matching network 11. The quartz resonant cavity 1 has a cylindrical cavity wall, an upper sealing cover 2 and a lower sealing cover 5 are respectively arranged at two ends of the cavity wall, a vacuum measuring resistor unit 3 and an ionization unit 4 are arranged outside the upper sealing cover 2, and an air inlet 6 is also arranged on the upper sealing cover 2. The lower sealing cover 5 is provided with a grounding position 7 and a vacuum extraction opening 12, and the vacuum extraction opening 12 is also provided with a gate valve 13.
A sample support 8 is also arranged in the quartz resonant cavity 1, and a tray 9 is arranged on the sample support 8. The tray 9 is used for loading microspheres to be processed. In order to ensure that the tray 9 carrying the sample of microspheres to be treated is as central as possible in the plasma source zone, which is so dense and uniformly distributed that the microspheres to be treated are completely immersed in the plasma environment, the position of the coil-type antenna 10 can be adjusted along the axis of the quartz resonator 1.
Referring to fig. 2, an embodiment of the method for removing the static electricity on the surface of the microsphere by the above-mentioned device for removing the static electricity on the surface of the microsphere is as follows.
Example 1
Firstly, a proper amount of microsphere sample to be treated is configured in a tray 9, and the tray 9 is placed in a quartz resonant cavity 1. The relative positions of the tray 9 and the antenna 10 are adjusted so that the tray 9 is at the center of the plasma source region.
Secondly, the quartz resonant cavity 1 is vacuumized through the vacuum pumping hole 12, so that the air pressure in the quartz resonant cavity 1 is pumped to 1 multiplied by 10 -3 Pa or less to ensure that the number of oxygen atoms contained in the quartz resonator 1 is sufficiently small. And then the discharge gas, specifically hydrogen, is injected into the quartz resonant cavity 1 through the gas inlet 6, and the hydrogen injection flow rate is 10ml/min. The air pressure in the quartz resonator 1 was measured by the resistance unit 3 and the ionization unit 4, and the air pressure in the quartz resonator 1 was adjusted to 30Pa using the gate valve 13.
Thirdly, when the air pressure in the quartz resonant cavity 1 is stable, a radio frequency power supply is started, a 40.68MHz radio frequency signal is provided for the antenna 10 through the radio frequency matching network 11, the input power is adjusted to 10W, so that a high-frequency alternating electric field is formed in the space of the discharge chamber, and free electrons bombard neutral particles in the electric field at a high speed to dissociate, so that a dynamically balanced plasma is generated; ions and electrons in the plasma are respectively neutralized with opposite charges on the surfaces of the microspheres, so that the aim of removing static electricity is fulfilled. The duration of the application of the radio frequency signal is determined according to the plasma etching effect generated by the selected discharge gas, the application time of the radio frequency signal is the static electricity elimination processing time, and the surface morphology of the microsphere can be changed under the etching effect due to the fact that the microsphere is exposed to the plasma for a long time, so that the plasma processing time is as short as possible, and specifically 40-60s is taken as one period, and 1min is taken as one period in the embodiment.
And finally, repeating the operation of the upper section until the static electricity on the surface of the microsphere is eliminated.
Example 2
The procedure of this example was essentially the same as that of example 1, except that: helium is used as the discharge gas. The advantage of using helium discharge is that the plasma generated by helium is chemically inert and does not react with the microsphere sample to be treated.
Example 3
Firstly, a proper amount of microsphere sample to be treated is configured in a tray 9, and the tray 9 is placed in a quartz resonant cavity 1. The relative positions of the tray 9 and the antenna 10 are adjusted so that the tray 9 is at the center of the plasma source region.
Secondly, the quartz resonant cavity 1 is vacuumized through the vacuum pumping hole 12, so that the air pressure in the quartz resonant cavity 1 is pumped to 1 multiplied by 10 -3 Pa or below. And then injecting the discharge gas, specifically argon, into the quartz resonant cavity 1 through the gas inlet 6, wherein the injection flow rate is 20ml/min. The air pressure in the quartz resonator 1 was measured by the resistance unit 3 and the ionization unit 4, and the air pressure in the quartz resonator 1 was adjusted to 40Pa using the gate valve 13.
And thirdly, when the air pressure in the quartz resonant cavity 1 is stable, a radio frequency power supply is started, a 40.68MHz radio frequency signal is provided for the antenna 10 through the radio frequency matching network 11, the input power of the radio frequency signal is regulated to 80W, so that a high-frequency alternating electric field is formed in the space of the discharge chamber, and free electrons bombard neutral particles in the electric field at an increased speed to dissociate the neutral particles, so that a dynamically balanced plasma is generated. The application time of the radio frequency signal is the static electricity eliminating processing time, wherein the duration of single continuous application of the radio frequency signal is 40s. Ions and electrons in the plasma are respectively neutralized with opposite charges on the surfaces of the microspheres, so that static electricity on the surfaces of the microspheres is eliminated.
And finally, repeating the operation of the upper section until the static electricity on the surface of the microsphere is eliminated, and finally achieving the purpose of eliminating the static electricity.
Because the mass of argon is much larger than that of hydrogen and helium, after the argon generates plasma, when ions bombard the surface of the microsphere sample, the exchanged energy is much larger than that of the hydrogen and helium. Therefore, it is preferable to use a higher discharge gas pressure, and a lower radio frequency input power, to reduce ion energy and sheath potential drop in the argon plasma.
Claims (8)
1. The device for eliminating the static electricity on the surface of the microsphere is characterized in that: the antenna (10) is coiled and connected with a radio frequency matching network (11); the quartz resonant cavity (1) is provided with a resistance unit (3) and an ionization unit (4) for vacuum measurement, a vacuum extraction opening (12) and an air inlet (6), a grounding position (7) is further arranged on the quartz resonant cavity (1), the quartz resonant cavity (1) comprises a cylindrical cavity wall, an upper sealing cover (2) and a lower sealing cover (5) which are connected to two ends of the cavity wall, the resistance unit (3), the ionization unit (4) and the air inlet (6) are arranged on the upper sealing cover (2), and the grounding position (7) and the vacuum extraction opening (12) are arranged on the lower sealing cover (5); a sample support (8) is further arranged in the quartz resonant cavity (1), and a tray (9) is arranged on the sample support (8).
2. The apparatus for removing static electricity from the surface of microspheres according to claim 1, wherein: a gate valve (13) is also arranged on the vacuum extraction opening (12).
3. The apparatus for removing static electricity from the surface of microspheres according to claim 1, wherein: the center of the antenna (10) is positioned on the axis of the quartz resonant cavity (1).
4. The method for eliminating the static electricity on the microsphere surface is characterized by comprising the following steps: a method for eliminating static electricity on the surface of microspheres by the device for eliminating static electricity on the surface of microspheres according to any one of the claims 1 to 3, comprising the steps of:
firstly, disposing microsphere samples in a tray (9), and placing the tray (9) in a quartz resonant cavity (1);
step two, vacuumizing the quartz resonant cavity (1), and then introducing discharge gas into the quartz resonant cavity (1), wherein the discharge gas does not chemically react with the microsphere sample to be treated, and substances which can chemically react with the microsphere sample to be treated are not generated after the discharge gas is dissociated;
step three, turning on a radio frequency power supply, providing radio frequency signals to an antenna (10) through a radio frequency matching network (11), and determining the duration of the application of the radio frequency signals according to the plasma etching effect generated by the selected discharge gas; generating plasma in the quartz resonant cavity (1), exposing the microsphere sample in a plasma environment, and respectively neutralizing ions and electrons in the plasma with negative charges and positive charges on the surface of the microsphere to be treated;
and fourthly, repeating the third step until the static electricity on the surface of the microsphere is eliminated.
5. The method for eliminating static electricity on the surface of the microsphere according to claim 4, wherein: in the second step, the quartz resonant cavity (1) is vacuumized to ensure that the air pressure of the quartz resonant cavity (1) is lower than 1 multiplied by 10 -3 Pa; and then, introducing discharge gas into the quartz resonant cavity (1) to ensure that the air pressure of the quartz resonant cavity (1) is 20-40Pa.
6. The method for eliminating static electricity on the surface of the microsphere according to claim 4, wherein: in the second step, the discharge gas is hydrogen or inert gas.
7. The method for eliminating static electricity on the surface of the microsphere according to claim 4, wherein: in the third step, the radio frequency signal is generated by a radio frequency generation source, and the frequency of the radio frequency signal is 13.56MHz, 27.12MHz or 40.68MHz.
8. The method for eliminating static electricity on the surface of the microsphere according to claim 4, wherein: in the third step, the duration of the application of the radio frequency signal is not more than 60s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611235616.2A CN106714439B (en) | 2016-12-28 | 2016-12-28 | Device and method for eliminating microsphere surface static electricity |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611235616.2A CN106714439B (en) | 2016-12-28 | 2016-12-28 | Device and method for eliminating microsphere surface static electricity |
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| Publication Number | Publication Date |
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| CN106714439A CN106714439A (en) | 2017-05-24 |
| CN106714439B true CN106714439B (en) | 2023-10-27 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101346032A (en) * | 2008-04-24 | 2009-01-14 | 大连海事大学 | Barometric pressure microwave plasma generation device |
| CN104131269A (en) * | 2014-07-24 | 2014-11-05 | 中国工程物理研究院激光聚变研究中心 | Preparation apparatus of microspheric polymer coating |
| CN206314049U (en) * | 2016-12-28 | 2017-07-07 | 中国工程物理研究院激光聚变研究中心 | Eliminate the device of microsphere surface electrostatic |
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2016
- 2016-12-28 CN CN201611235616.2A patent/CN106714439B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101346032A (en) * | 2008-04-24 | 2009-01-14 | 大连海事大学 | Barometric pressure microwave plasma generation device |
| CN104131269A (en) * | 2014-07-24 | 2014-11-05 | 中国工程物理研究院激光聚变研究中心 | Preparation apparatus of microspheric polymer coating |
| CN206314049U (en) * | 2016-12-28 | 2017-07-07 | 中国工程物理研究院激光聚变研究中心 | Eliminate the device of microsphere surface electrostatic |
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| CN106714439A (en) | 2017-05-24 |
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