CN106711563B - Semi-annular surface wave transmission line and power divider fed by coplanar waveguide - Google Patents
Semi-annular surface wave transmission line and power divider fed by coplanar waveguide Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
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Abstract
The invention discloses a semi-annular surface wave transmission line and a power divider fed by coplanar waveguides, wherein the transmission line comprises a dielectric substrate, a first coplanar waveguide, a second coplanar waveguide, a first transition structure, a second transition structure and a semi-annular surface wave structure, wherein the first coplanar waveguide, the second coplanar waveguide, the first transition structure, the second transition structure and the semi-annular surface wave structure are arranged on the same layer of the dielectric substrate; the first coplanar waveguide and the second coplanar waveguide are symmetrical left and right, the first transition structure and the second transition structure are symmetrical left and right, the first coplanar waveguide is connected with the left end of the semi-annular surface wave structure through the first transition structure, and the second coplanar waveguide is connected with the right end of the semi-annular surface wave structure through the second transition structure. The transmission line and the power divider can realize the conversion from TEM waves to surface waves under the condition that the dielectric substrate has no bottom metal ground, and can transmit electromagnetic waves with low loss.
Description
Technical Field
The invention relates to a transmission line and a power divider, in particular to a coplanar waveguide feed semi-annular surface wave transmission line and a power divider, belonging to the technical field of integrated circuits and surface waves.
Background
The surface wave transmission can realize the high-frequency electromagnetic wave transmission of a single conductor, has good flexibility and easy processing, and can realize the low-loss electromagnetic wave transmission. In future communication technology, the surface wave structure can realize high integration and miniaturization, and has great application value to the communication industry and the integrated circuit industry.
According to investigation and understanding, the prior art that has been disclosed is as follows:
1) the invention patent with Chinese patent number 201310222354.6 discloses a device for mutual conversion of a microstrip and surface plasmon polariton, which comprises a dielectric substrate, a microstrip balun arranged on one side of the dielectric substrate, two sections of gradient metal wires connected with the microstrip balun, a metal grating connected to one end of one section of gradient metal wire, a metal wedge connected to one end of the other section of gradient metal wire, and a metal ground arranged on the other side of the dielectric substrate.
2) The invention patent application with the Chinese patent application number of 201510591849.5 discloses an ultra-wideband artificial surface plasmon low-pass filter, which consists of a dielectric substrate and metal foil layers printed on the upper surface and the lower surface of the dielectric substrate, wherein a waveguide structure is engraved on the metal foil layers, the waveguide structure comprises a microstrip line structure with two symmetrical ends, a transition structure from the microstrip line structure to a surface plasmon basic element waveguide structure, and a middle surface plasmon waveguide structure, and the transition structure is formed by connecting a first transition structure and a second transition structure.
3) The invention patent application with the Chinese patent application number of 201610513698.6 discloses a surface plasmon-based band-pass filter which has the characteristics of reasonable structural design, large bandwidth, controllable frequency and low insertion loss, and meanwhile, the change of the working frequency of the filter can be realized by properly adjusting the parameters of the structure and changing the dispersion curve of the metal surface, the adjustment mode is quite simple, the circuit processing is easy, and the filter is easy to integrate with other microwave circuits.
The above prior art all uses a microstrip line-to-surface structure, and since the microstrip line cannot be a single-layer metal and needs a bottom-layer metal ground, the surface wave and the microstrip circuit cannot be integrated in one plane.
Disclosure of Invention
The present invention is directed to solving the above-mentioned drawbacks of the prior art, and provides a coplanar waveguide-fed half-ring surface wave transmission line, which has a simple structure, can realize the conversion of TEM waves into surface waves without a bottom metal ground on a dielectric substrate, and can transmit electromagnetic waves with low loss.
Another object of the present invention is to provide a coplanar waveguide fed half-ring surface wave power divider, which can also realize the conversion from TEM wave to surface wave without bottom metal ground on the dielectric substrate, and is easy to realize the performance of power division, and can transmit electromagnetic wave with low loss.
The purpose of the invention can be achieved by adopting the following technical scheme:
the semi-annular surface wave transmission line fed by the coplanar waveguide comprises a dielectric substrate, a first coplanar waveguide, a second coplanar waveguide, a first transition structure, a second transition structure and a semi-annular surface wave structure, wherein the first coplanar waveguide, the second coplanar waveguide, the first transition structure, the second transition structure and the semi-annular surface wave structure are arranged on the same layer of the dielectric substrate;
the first coplanar waveguide and the second coplanar waveguide are bilaterally symmetrical, the first transition structure and the second transition structure are bilaterally symmetrical, the first coplanar waveguide is connected with the left end of the semi-annular surface wave structure through the first transition structure, and the second coplanar waveguide is connected with the right end of the semi-annular surface wave structure through the second transition structure.
As a preferable scheme, the first transition structure comprises a plurality of first semi-annular transition units and first metal units positioned at two sides of the first semi-annular transition units; the first semi-annular transition unit is connected with the left end of the semi-annular surface wave structure, the first semi-annular transition units are sequentially connected from left to right and gradually become larger, the first metal unit gradually gets away from the first semi-annular transition unit from left to right and disappears at the connection position of the first semi-annular transition unit and the left end of the semi-annular surface wave structure;
the second transition structure includes a plurality of second semi-ring transition units and is located the second metal unit of second semi-ring transition unit both sides, second semi-ring transition unit is connected with the right-hand member of semi-ring surface wave structure, and second semi-ring transition unit connects gradually from the right side to left side to grow gradually, second metal unit is kept away from second semi-ring transition unit from the right side to left side gradually, and disappears in the junction of second semi-ring transition unit and semi-ring surface wave structure left end.
As a preferable scheme, the semi-ring surface wave structure is composed of a plurality of semi-ring units, and the plurality of semi-ring units are arranged according to a period and are sequentially connected together; the size of each semi-annular unit is consistent, and the height, width and thickness degree of each semi-annular unit and the distance between two adjacent semi-annular units are adjusted according to the required frequency application range.
The other purpose of the invention can be achieved by adopting the following technical scheme:
the semi-ring surface wave power divider fed by the coplanar waveguide comprises a dielectric substrate, and further comprises a first coplanar waveguide, a second coplanar waveguide, a third coplanar waveguide, a first transition structure, a second transition structure, a third transition structure, a fourth transition structure, a first semi-ring surface wave structure, a second semi-ring surface wave structure, a third semi-ring surface wave structure and a fourth semi-ring surface wave structure, wherein the first coplanar waveguide, the second coplanar waveguide, the third coplanar waveguide, the first transition structure, the second transition structure, the third transition structure, the fourth transition structure, the first semi-ring surface wave structure, the second semi-ring surface wave structure, the third semi-ring surface wave structure and the fourth semi-ring surface wave structure are arranged on the same layer of the dielectric substrate;
first transition structure and second transition structure constitute double-circuit transition structure side by side, first semi-annular surface wave structure and second semi-annular surface wave constitute double-circuit semi-annular surface wave structure side by side, first coplanar waveguide crosses double-circuit transition structure and is connected with the front end of double-circuit semi-annular surface wave structure, is connected with the front end of third semi-annular surface wave structure, the front end of fourth semi-annular surface wave structure respectively behind the terminal cross-over power divider resistance of double-circuit semi-annular surface wave structure, the second coplanar waveguide is connected with the end-to-end connection of third transition structure and third semi-annular surface wave structure, the third coplanar waveguide is connected with the end-to-end connection of fourth transition structure and fourth semi-annular surface wave structure.
As a preferred scheme, the first transition structure includes a plurality of first semi-ring transition units and a first metal unit located on the upper side of the first semi-ring transition units, the first semi-ring transition units are connected with the front end of the first semi-ring surface wave structure, the first semi-ring transition units are sequentially connected from left to right and gradually increase in size, and the first metal unit gradually gets away from the first semi-ring transition unit from left to right and disappears at the connection between the first semi-ring transition unit and the front end of the first semi-ring surface wave structure;
the second transition structure comprises a plurality of second semi-ring transition units and a second metal unit positioned on the lower side of the second semi-ring transition units, the second semi-ring transition units are connected with the front end of the second semi-ring surface wave structure, the second semi-ring transition units are sequentially connected from left to right and gradually become larger, and the second metal unit is gradually far away from the second semi-ring transition units from left to right and disappears at the connection position of the second semi-ring transition units and the front end of the second semi-ring surface wave structure;
the third transition structure comprises a plurality of third semi-ring transition units and a third metal unit positioned on the left side of the third semi-ring transition units, the third semi-ring transition units are connected with the tail ends of the third semi-ring surface wave structures, the third semi-ring transition units are sequentially connected from top to bottom and gradually become larger, and the third metal unit is gradually far away from the third semi-ring transition units from top to bottom and disappears at the connection positions of the third semi-ring transition units and the tail ends of the third semi-ring surface wave structures;
the fourth transition structure comprises a plurality of fourth semi-ring transition units and a fourth metal unit located on the left side of the fourth semi-ring transition units, the fourth semi-ring transition units are connected with the tail end of the fourth semi-ring surface wave structure in sequence from bottom to top, the fourth semi-ring transition units are gradually connected and gradually enlarged, the fourth metal unit is gradually far away from the fourth semi-ring transition units from bottom to top, and the connection position of the fourth semi-ring transition units and the front end of the fourth semi-ring surface wave structure disappears.
As a preferable scheme, the first semi-ring surface wave structure is composed of a plurality of first semi-ring units, and the plurality of first semi-ring units are arranged according to a period and are sequentially connected together;
the second semi-annular surface wave structure consists of a plurality of second semi-annular units which are arranged periodically and connected together in sequence;
the third semi-annular surface wave structure is composed of a plurality of third semi-annular units, and the third semi-annular units are arranged periodically and are connected together in sequence;
the fourth semi-annular surface wave structure is composed of a plurality of fourth semi-annular units, and the fourth semi-annular units are arranged periodically and are connected together in sequence;
the sizes of the first semi-ring unit, the second semi-ring unit, the third semi-ring unit and the fourth semi-ring unit are consistent, and the height, the width and the thickness degree of each semi-ring unit and the distance between two adjacent semi-ring units are adjusted according to the required frequency application range.
Preferably, the axis of the first coplanar waveguide is perpendicular to the axis of the second coplanar waveguide and the axis of the third coplanar waveguide.
Preferably, the second coplanar waveguide, the third transition structure and the third semi-ring surface wave structure are respectively symmetric with the third coplanar waveguide, the fourth transition structure and the fourth semi-ring surface wave structure.
Compared with the prior art, the invention has the following beneficial effects:
1. the transmission line of the invention is respectively provided with the coplanar waveguide and the transition structure at the left side and the right side of the same layer of the dielectric substrate, and the semi-annular surface wave structure is arranged in the middle, thereby realizing a planar circuit structure without metal ground, the electromagnetic wave is changed into surface wave from the TEM wave of the coplanar waveguide in the transition structure, the surface wave enters the semi-annular surface wave structure from the transition structure, the coplanar waveguide at the left side, the transition structure at the left side, the semi-annular surface wave structure, the coplanar waveguide at the right side and the transition structure at the right side are sequentially connected to form the surface wave transmission line, and the conversion between the coplanar waveguide and the semi-annular surface wave structure is realized.
2. The power divider is provided with three coplanar waveguides, four transition structures and four semi-annular surface wave structures on the same layer of a medium substrate, so that a planar circuit structure without metal ground is realized, wherein the two transition structures are arranged side by side to form a double-path transition structure, the two semi-annular surface wave structures are arranged side by side to form a double-path semi-annular surface wave structure, the tail end of the double-path semi-annular surface wave structure is connected with the other two semi-annular surface wave structures respectively after being bridged with a power dividing resistor, so that a power dividing function is realized, after power is divided into two paths, each path passes through one transition structure and then is output from a port through one coplanar waveguide, and the conversion between the coplanar waveguides and the semi-annular surface wave structures is realized.
3. In the transmission line and the power divider, the transition structure comprises a plurality of semi-annular transition units and metal units positioned on two sides of the semi-annular transition units, the semi-annular transition units are sequentially connected and gradually enlarged, the metal units are gradually far away from the semi-annular transition units and finally disappear completely, the semi-annular transition units can be changed according to actual use occasions, and the more transition units, the smoother the conversion is.
4. In the transmission line and the power divider, the semi-annular surface wave structure is composed of a plurality of semi-annular units with the same size, the number of the semi-annular units can be set according to actual needs, the semi-annular units can be arranged in a bending mode, wiring is more flexible, and the height, the width and the thickness of each semi-annular unit and the distance between two adjacent semi-annular units can be adjusted according to the required frequency application range.
Drawings
Fig. 1 is a schematic structural view of a coplanar waveguide-fed half-ring surface wave transmission line according to embodiment 1 of the present invention.
Fig. 2 is a schematic structural diagram of a coplanar waveguide-fed half-ring surface wave power splitter according to embodiment 2 of the present invention.
In fig. 1, 1-dielectric substrate, 2-first coplanar waveguide, 3-second coplanar waveguide, 4-first transition structure, 5-second transition structure, 6-semi-ring surface wave structure, 7-first semi-ring transition unit, 8-first metal unit, 9-first transmission section, 10-second semi-ring transition unit, 11-second metal unit, 12-second transmission section, 13-semi-ring unit.
In fig. 2, 1-dielectric substrate, 2-first coplanar waveguide, 3-second coplanar waveguide, 4-third coplanar waveguide, 5-first half-ring transition unit, 6-first metal unit, 7-second half-ring transition unit, 8-second metal unit, 9-first half-ring unit, 10-second half-ring unit, 11-power dividing resistance, 12-third half-ring transition unit, 13-third metal unit, 14-fourth half-ring transition unit, 15-fourth metal unit, 16-third half-ring unit, 17-fourth half-ring unit.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the present invention is not limited thereto.
Example 1:
as shown in fig. 1, the surface wave transmission line of the present embodiment includes a dielectric substrate 1, a first coplanar waveguide 2, a second coplanar waveguide 3, a first transition structure 4, a second transition structure 5, and a semi-ring surface wave structure 6, wherein the first coplanar waveguide 2, the second coplanar waveguide 3, the first transition structure 4, the second transition structure 5, and the semi-ring surface wave structure 6 are disposed on the same layer of the dielectric substrate 1, in the present embodiment, on the top layer, and the bottom layer of the dielectric substrate 1 is free of copper plating; the first coplanar waveguide 2 and the second coplanar waveguide 3 are bilaterally symmetrical, and the first transition structure 4 and the second transition structure 5 are bilaterally symmetrical.
The first transition structure 4 comprises a plurality of first semi-annular transition units 7 and first metal units 8 positioned at two sides of the plurality of first semi-annular transition units 7; the first semi-annular transition unit 7 is connected with the left end of the semi-annular surface wave structure 6, the first semi-annular transition units 7 are sequentially connected from left to right and gradually become larger, the first metal unit 8 also gradually becomes larger from left to right, namely gradually gets away from the first semi-annular transition unit 7 and disappears at the connection position of the first semi-annular transition unit 7 and the left end of the semi-annular surface wave structure 6, the first semi-annular transition unit 7 can change according to actual use occasions, and the more the first semi-annular transition units 7 are, the smoother the conversion is; electromagnetic waves are converted into surface waves in the first transition structure 4 from TEM (Transverse Electric and Magnetic Field, meaning that both the Electric Field and the Magnetic Field of the electromagnetic waves are in the plane perpendicular to the propagation direction) waves of the first transmission part 9 of the first coplanar waveguide 2, and the surface waves enter the semi-annular surface wave structure 6 from the first transition structure 4 and are transmitted to the second coplanar waveguide 3 through the second transition structure 5;
the second transition structure 5 includes a plurality of second half-ring transition units 10 and second metal units 11 located at two sides of the plurality of second half-ring transition units 10, the second half-ring transition units 10 are connected to the right end of the half-ring surface wave structure 6, the second half-ring transition units 10 are sequentially connected from right to left and gradually increase in size, the second metal units 11 also gradually increase in size from left to right, that is, gradually leave away from the second half-ring transition units 10, and disappear at the connection between the second half-ring transition units 10 and the left end of the half-ring surface wave structure 6, similarly, the second half-ring transition units 10 may change according to actual usage occasions, and the more the second half-ring transition units 10, the smoother the conversion is; similarly, the electromagnetic wave is changed from the TEM wave of the second transmission section 12 of the second coplanar waveguide 3 to the surface wave in the second transition structure 5, and the surface wave enters the semi-annular surface wave structure 6 from the second transition structure 5 and is transmitted to the first coplanar waveguide 2 through the first transition structure 4.
The semi-annular surface wave structure 6 is composed of a plurality of semi-annular units 13, the semi-annular units 13 are arranged according to a period and are sequentially connected together, the number of the semi-annular units 13 is set according to actual needs, the size of each semi-annular unit 13 is consistent, and the height, the width and the thickness of each semi-annular unit and the distance between two adjacent semi-annular units are adjusted according to a required frequency application range; the first coplanar waveguide 2, the first transition structure 4, the semi-annular surface wave structure 6, the second coplanar waveguide 3 and the second transition structure 5 are connected in sequence to form a surface wave transmission line.
Example 2:
as shown in fig. 2, the surface wave power splitter of the present embodiment includes a dielectric substrate 1, a first coplanar waveguide 2, a second coplanar waveguide 3, a third coplanar waveguide 4, a first transition structure, a second transition structure, a third transition structure, a fourth transition structure, a first semi-ring surface wave structure, a second semi-ring surface wave structure, a third semi-ring surface wave structure, and a fourth semi-ring surface wave structure, wherein the first coplanar waveguide 2, the second coplanar waveguide 3, the third coplanar waveguide 4, the first transition structure, the second transition structure, the third transition structure, the fourth transition structure, the first semi-ring surface wave structure, the second semi-ring surface wave structure, the third semi-ring surface wave structure, and the fourth semi-ring surface wave structure are disposed on the same layer of the dielectric substrate 1, and a bottom layer of the dielectric substrate 1 is free of copper plating; the axis of the first coplanar waveguide 2 is vertical to the axis of the second coplanar waveguide 3 and the axis of the third coplanar waveguide 4, and the second coplanar waveguide 3, the third transition structure and the third semi-ring surface wave structure are respectively symmetrical to the third coplanar waveguide 4, the fourth transition structure and the fourth semi-ring surface wave structure.
The first transition structure comprises a plurality of first semi-annular transition units 5 and a first metal unit 6 positioned on the upper side of the first semi-annular transition units 5, the first semi-annular transition units 5 are connected with the front end of the first semi-annular surface wave structure, the first semi-annular transition units 5 are sequentially connected from left to right and gradually become larger, and the first metal unit 6 is gradually far away from the first semi-annular transition units 5 from left to right and disappears at the connection part of the first semi-annular transition units 5 and the front end of the first semi-annular surface wave structure;
the second transition structure comprises a plurality of second semi-ring transition units 7 and a second metal unit 8 positioned on the lower side of the second semi-ring transition units 7, the second semi-ring transition units 7 are connected with the front end of the second semi-ring surface wave structure, the second semi-ring transition units 7 are sequentially connected from left to right and gradually increase in size, and the second metal unit 8 gradually gets away from the second semi-ring transition units 7 from left to right and disappears at the connection position of the second semi-ring transition units 7 and the front end of the second semi-ring surface wave structure;
the first transition structure and the second transition structure form a double-path transition structure side by side, the semi-ring transition units of the double-path transition structure are enlarged synchronously, the interval between the semi-ring transition units and the metal units of the double-path transition structure is gradually widened and finally completely disappears, the first semi-ring surface wave structure and the second semi-ring surface wave structure form a double-path semi-ring surface wave structure side by side, the first semi-ring surface wave structure comprises a plurality of first semi-ring units 9, and the first semi-ring units 9 are arranged according to a period and are sequentially connected together; the second semi-annular surface wave structure is composed of a plurality of second semi-annular units 10, the second semi-annular units 10 are arranged periodically and are connected together in sequence, the number of the first semi-annular units 9 and the number of the second semi-annular units 10 can be more or less, and the tail end of the double-path semi-annular surface wave structure is connected with the front end of the third semi-annular surface wave structure and the front end of the fourth semi-annular surface wave structure respectively after being bridged with a power dividing resistor 11, so that the power dividing function is realized.
The third transition structure comprises a plurality of third semi-ring transition units 12 and a third metal unit 13 positioned on the left side of the third semi-ring transition units 12, the third semi-ring transition units 12 are connected with the tail ends of the third semi-ring surface wave structures, the third semi-ring transition units 12 are sequentially connected from top to bottom and gradually become larger, and the third metal unit 13 is gradually far away from the third semi-ring transition units 12 from top to bottom and disappears at the connection positions of the third semi-ring transition units 12 and the tail ends of the third semi-ring surface wave structures;
the fourth transition structure comprises a plurality of fourth semi-ring transition units 14 and a fourth metal unit 15 positioned on the left side of the fourth semi-ring transition units 14, the fourth semi-ring transition units 14 are connected with the tail ends of the fourth semi-ring surface wave structures, the fourth semi-ring transition units 14 are sequentially connected from bottom to top and gradually become larger, and the fourth metal unit 15 gradually keeps away from the fourth semi-ring transition units 14 from bottom to top and disappears at the connection part of the fourth semi-ring transition units 14 and the front ends of the fourth semi-ring surface wave structures;
the third semi-ring surface wave structure is composed of a plurality of third semi-ring units 16 which are arranged according to a period and are sequentially connected together; the fourth semi-ring surface wave structure is composed of a plurality of fourth semi-ring units 17 which are arranged according to a period and are connected together in sequence; the second coplanar waveguide 3 is connected with the end of the third semi-annular surface wave structure through a third transition structure, the third coplanar waveguide 4 is connected with the end of the fourth semi-annular surface wave structure through a fourth transition structure, electromagnetic waves input from the Port1 pass through the first coplanar waveguide 2 and then pass through the two-way transition structure, the power division function is realized on the two-way semi-annular surface wave structure, after the power is divided into two ways, one way passes through the third transition structure and then is output from the Port2 through the second coplanar waveguide 3, and the other way passes through the fourth transition structure and then is output from the Port3 through the third coplanar waveguide 4.
The first semi-ring unit 9, the second semi-ring unit 10, the third semi-ring unit 14 and the fourth semi-ring unit 16 are arranged according to actual needs, the sizes of the first semi-ring unit, the second semi-ring unit, the third semi-ring unit and the fourth semi-ring unit are consistent, and the height, the width and the thickness of each semi-ring unit and the distance between two adjacent semi-ring units are adjusted according to the required frequency application range.
In summary, the transmission line of the present invention has coplanar waveguides and transition structures respectively disposed on the left and right sides of the same layer of the dielectric substrate, and a half-ring surface wave structure disposed in the middle, so as to realize a planar circuit structure without metal ground, where electromagnetic waves are changed from TEM waves of the coplanar waveguides to surface waves in the transition structure, and the surface waves enter the half-ring surface wave structure from the transition structure, and the coplanar waveguides on the left, the transition structure on the left, the half-ring surface wave structure, the coplanar waveguides on the right, and the transition structures on the right are sequentially connected to form a surface wave transmission line, so as to realize conversion between the coplanar waveguides and the half-ring surface wave structure; the power divider is provided with three coplanar waveguides, four transition structures and four semi-annular surface wave structures on the same layer of a medium substrate, so that a planar circuit structure without metal ground is realized, wherein the two transition structures are arranged side by side to form a double-path transition structure, the two semi-annular surface wave structures are arranged side by side to form a double-path semi-annular surface wave structure, the tail end of the double-path semi-annular surface wave structure is connected with the other two semi-annular surface wave structures respectively after being bridged with a power dividing resistor, so that a power dividing function is realized, after power is divided into two paths, each path passes through one transition structure and then is output from a port through one coplanar waveguide, and the conversion between the coplanar waveguides and the semi-annular surface wave structures is realized.
The above description is only for the preferred embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can substitute or change the technical solution and the inventive concept of the present invention within the scope of the present invention.
Claims (6)
1. The semi-annular surface wave transmission line of coplanar waveguide feed includes the dielectric substrate, its characteristic is: the dielectric substrate is provided with a first coplanar waveguide, a second coplanar waveguide, a first transition structure, a second transition structure and a semi-annular surface wave structure, wherein the first coplanar waveguide, the second coplanar waveguide, the first transition structure, the second transition structure and the semi-annular surface wave structure are arranged on the top layer of the dielectric substrate, and the bottom layer of the dielectric substrate is free of copper-clad ground;
the first coplanar waveguide and the second coplanar waveguide are bilaterally symmetrical, the first transition structure and the second transition structure are bilaterally symmetrical, the first coplanar waveguide is connected with the left end of the semi-annular surface wave structure through the first transition structure, and the second coplanar waveguide is connected with the right end of the semi-annular surface wave structure through the second transition structure;
the first transition structure comprises a plurality of first semi-annular transition units and first metal units positioned on two sides of the first semi-annular transition units; the first semi-annular transition unit is connected with the left end of the semi-annular surface wave structure, the first semi-annular transition units are sequentially connected from left to right and gradually become larger, the first metal unit gradually gets away from the first semi-annular transition unit from left to right and disappears at the connection position of the first semi-annular transition unit and the left end of the semi-annular surface wave structure;
the second transition structure includes a plurality of second semi-ring transition units and is located the second metal unit of second semi-ring transition unit both sides, second semi-ring transition unit is connected with the right-hand member of semi-ring surface wave structure, and second semi-ring transition unit connects gradually from the right side to left side to grow gradually, second metal unit is kept away from second semi-ring transition unit from the right side to left side gradually, and disappears in the junction of second semi-ring transition unit and semi-ring surface wave structure left end.
2. A coplanar waveguide fed half-ring surface wave transmission line as defined in claim 1 wherein: the semi-annular surface wave structure consists of a plurality of semi-annular units, and the semi-annular units are arranged periodically and are connected together in sequence; the size of each semi-annular unit is consistent, and the height, width and thickness degree of each semi-annular unit and the distance between two adjacent semi-annular units are adjusted according to the required frequency application range.
3. The semi-annular surface wave power divider of coplanar waveguide feed includes the dielectric substrate, its characteristic is: the dielectric substrate is characterized by further comprising a first coplanar waveguide, a second coplanar waveguide, a third coplanar waveguide, a first transition structure, a second transition structure, a third transition structure, a fourth transition structure, a first semi-ring surface wave structure, a second semi-ring surface wave structure, a third semi-ring surface wave structure and a fourth semi-ring surface wave structure, wherein the first coplanar waveguide, the second coplanar waveguide, the third coplanar waveguide, the first transition structure, the second transition structure, the third transition structure, the fourth transition structure, the first semi-ring surface wave structure, the second semi-ring surface wave structure, the third semi-ring surface wave structure and the fourth semi-ring surface wave structure are arranged on the top layer of the dielectric substrate, and the bottom layer of the dielectric substrate is free of copper-clad;
the first transition structure and the second transition structure form a double-path transition structure side by side, the first semi-annular surface wave structure and the second semi-annular surface wave structure form a double-path semi-annular surface wave structure side by side, the first coplanar waveguide is connected with the front end of the double-path semi-annular surface wave structure through the double-path transition structure, the tail end of the double-path semi-annular surface wave structure is connected with the front end of the third semi-annular surface wave structure and the front end of the fourth semi-annular surface wave structure respectively after being bridged with a power divider resistor, the second coplanar waveguide is connected with the tail end of the third semi-annular surface wave structure through the third transition structure, and the third coplanar waveguide is connected with the tail end of the fourth semi-annular surface wave structure through the fourth transition structure;
the first transition structure comprises a plurality of first semi-annular transition units and a first metal unit positioned on the upper side of the first semi-annular transition units, the first semi-annular transition units are connected with the front end of the first semi-annular surface wave structure, the first semi-annular transition units are sequentially connected from left to right and gradually become larger, and the first metal unit is gradually far away from the first semi-annular transition units from left to right and disappears at the connection position of the first semi-annular transition units and the front end of the first semi-annular surface wave structure;
the second transition structure comprises a plurality of second semi-ring transition units and a second metal unit positioned on the lower side of the second semi-ring transition units, the second semi-ring transition units are connected with the front end of the second semi-ring surface wave structure, the second semi-ring transition units are sequentially connected from left to right and gradually become larger, and the second metal unit is gradually far away from the second semi-ring transition units from left to right and disappears at the connection position of the second semi-ring transition units and the front end of the second semi-ring surface wave structure;
the third transition structure comprises a plurality of third semi-ring transition units and a third metal unit positioned on the left side of the third semi-ring transition units, the third semi-ring transition units are connected with the tail ends of the third semi-ring surface wave structures, the third semi-ring transition units are sequentially connected from top to bottom and gradually become larger, and the third metal unit is gradually far away from the third semi-ring transition units from top to bottom and disappears at the connection positions of the third semi-ring transition units and the tail ends of the third semi-ring surface wave structures;
the fourth transition structure comprises a plurality of fourth semi-ring transition units and a fourth metal unit located on the left side of the fourth semi-ring transition units, the fourth semi-ring transition units are connected with the tail end of the fourth semi-ring surface wave structure in sequence from bottom to top, the fourth semi-ring transition units are gradually connected and gradually enlarged, the fourth metal unit is gradually far away from the fourth semi-ring transition units from bottom to top, and the connection position of the fourth semi-ring transition units and the front end of the fourth semi-ring surface wave structure disappears.
4. A coplanar waveguide fed half-ring surface wave power splitter as claimed in claim 3 wherein:
the first semi-annular surface wave structure is composed of a plurality of first semi-annular units which are arranged according to a period and are sequentially connected together;
the second semi-annular surface wave structure consists of a plurality of second semi-annular units which are arranged periodically and connected together in sequence;
the third semi-annular surface wave structure is composed of a plurality of third semi-annular units, and the third semi-annular units are arranged periodically and are connected together in sequence;
the fourth semi-annular surface wave structure is composed of a plurality of fourth semi-annular units, and the fourth semi-annular units are arranged periodically and are connected together in sequence;
the sizes of the first semi-ring unit, the second semi-ring unit, the third semi-ring unit and the fourth semi-ring unit are consistent, and the height, the width and the thickness degree of each semi-ring unit and the distance between two adjacent semi-ring units are adjusted according to the required frequency application range.
5. A coplanar waveguide fed half-ring surface wave power splitter as claimed in claim 3 wherein: the axis of the first coplanar waveguide is vertical to the axis of the second coplanar waveguide and the axis of the third coplanar waveguide.
6. A coplanar waveguide fed half-ring surface wave power splitter as claimed in claim 3 wherein: the second coplanar waveguide, the third transition structure and the third semi-annular surface wave structure are respectively in upper-lower symmetry with the third coplanar waveguide, the fourth transition structure and the fourth semi-annular surface wave structure.
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| WO2020041968A1 (en) * | 2018-08-28 | 2020-03-05 | 华为技术有限公司 | Surface wave conversion coupling device and surface wave communication system |
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| US9837695B2 (en) * | 2014-08-01 | 2017-12-05 | The Boeing Company | Surface-wave waveguide with conductive sidewalls and application in antennas |
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