CN105449326B - The microwave filter and its design method of the wide suppression of high selectivity - Google Patents
The microwave filter and its design method of the wide suppression of high selectivity Download PDFInfo
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Abstract
The invention discloses the microwave filter and its design method of the wide suppression of high selectivity, wherein, the microwave filter of the wide suppression of high selectivity, pass through conductive gluing pcb board and metal support plate together with；Pcb board includes medium substrate, and the upper and lower surface of medium substrate is respectively provided with copper coating；The copper coating of medium substrate upper surface includes the incoming feeder and output feeder for being arranged on medium substrate both ends, and incoming feeder is connected with the first parallel coupling structure, and output feeder is connected with the second parallel coupling structure；A defect sturcture is respectively provided with first parallel coupling structure and the second parallel coupling structure；First parallel coupling structure and the second parallel coupling structure are linked together by two wave filter feeder lines of setting；A SIR resonator is at least connected with every wave filter feeder line；The metallic vias turned on medium substrate lower surface copper coating is provided with two wave filter feeder lines.
Description
Technical field
The invention belongs to the technical fields such as communication equipment, radar equipment, measuring instrument, and in particular to the wide suppression of high selectivity
Microwave filter and its design method.
Background technology
As the fast development of wireless communication technology, microwave device are of increased attention.The nothing of emergence
Line communication system applications it is also proposed higher requirement, high-performance, high reliability, miniaturization, low cost to Wireless Telecom Equipment
The basic demand of novel wireless communication electronic equipment is turned into.Microwave filter be critical elements in Modern Communication System it
One, it plays the important function of selection signal, and the quality of its performance is directly connected to the quality of whole communication system.With nothing
The development of line communication system, frequency spectrum resource growing tension, the interval between frequency is less and less, wave filter it is also proposed higher
It is required that.High selectivity, miniaturization one of the study hotspot as microwave filter and difficult point, while how in wider band frequency range
In the range of curb other wireless signals interference be also be a difficult point.
The cavity body filter often used on the market at present is suitable only for higher microwave frequency band because size is larger；Substrate
For the size of integral wave guide filter for the low side of microwave frequency band, its size is bigger, and being still only suitable for higher frequency band should
With；And LTCC wave filters also have the shortcomings that complex manufacturing, Insertion Loss is big in passband, it is high to throw piece cost.
The content of the invention
For above-mentioned deficiency of the prior art, the microwave filter of the wide suppression of high selectivity provided by the invention and its set
Meter method solves the problems, such as that tradition realizes that highly selective filter needs more exponent number to cause filter area to increase.
In order to reach foregoing invention purpose, the technical solution adopted by the present invention is：
First aspect, there is provided a kind of microwave filter of the wide suppression of high selectivity, it is included by conductive gluing and one
The pcb board and metal support plate risen；Pcb board includes medium substrate, and the upper and lower surface of medium substrate is respectively provided with copper coating；Medium substrate
The copper coating of upper surface includes the incoming feeder and output feeder for being arranged on medium substrate both ends, incoming feeder coupling parallel with first
Structure connection is closed, output feeder is connected with the second parallel coupling structure；
A defect sturcture is respectively provided with first parallel coupling structure and the second parallel coupling structure；First parallel coupling structure
Linked together with the second parallel coupling structure by two wave filter feeder lines of setting；It is at least connected with every wave filter feeder line
There is a SIR resonator；The metallic vias turned on medium substrate lower surface copper coating is provided with two wave filter feeder lines.
Second aspect, there is provided a kind of design method of the microwave filter of the wide suppression of high selectivity, it comprises the following steps：
Obtain centre frequency, the relative dielectric constant of medium substrate and the thickness of medium substrate of pcb board of microwave filter
Degree；
According to the relative dielectric constant and thickness of medium substrate, the width of calculating incoming feeder and output feeder：
Wherein, ZcFor the characteristic impedance of feeder line, εrFor the relative dielectric constant of medium substrate, h is the thickness of medium substrate,
εreFor effective dielectric constant；η is free space wave impedance, and W is the width of incoming feeder or output feeder；
The size of SIR resonators is calculated according to the centre frequency of microwave filter：
Wherein, lrFor SIR resonator dimensions, f0For the centre frequency of microwave filter, c is the light velocity in vacuum, εrFor medium
The relative dielectric constant of substrate；
According to the impedance of the high low-impedance line of SIR resonators and impedance ratio, high resistant line electrical length is calculated：
θ2=arctan [Z1/(Z2tanθ1)]
Wherein, θ1For low-resistance line electrical length, θ2For high resistant line electrical length, Z1And Z2For the high low-impedance line of SIR resonators
Characteristic impedance；
By Chebyshev filter low pass prototypes, the coupling amount between each SIR resonators is calculated；
Wherein, mI, i-1For the coupling amount between i-th of SIR resonator and i+1 SIR resonators, FBW is microwave filtering
The relative bandwidth of device, giFor low-pass prototype parameter, n is the number of SIR resonators, 1≤i≤n-1；
Defect sturcture, and the chi of the parasitic passband design defect structure according to microwave filter are added on microwave filter
It is very little；
Emulated using 3 D electromagnetic to calculated value incoming feeder width, output feeder width, the size of resonator, high resistant line
The size of coupling amount and defect sturcture between electrical length, each resonator optimizes；
When the frequency response of all calculated values is equal to setting value, incoming feeder width, output feedback after output optimization
The size of coupling amount and defect sturcture between line width, the size of resonator, high resistant line electrical length, each resonator.
Compared with tradition realizes highly selective filter, beneficial effects of the present invention are：
1st, the microwave filter of this programme filters as a result of two parallel coupling structures as design cell fixed
4 zero points of incrementss in the case of device exponent number (two internal layer zero points and two outer layer zero points, it is each in microwave filter passband or so
Two), solve the technologies such as conventional microstrip, co-planar waveguide causes selectivity is poor to ask in microwave frequency band because Q values are relatively low
Topic.
2nd, as a result of defect sturcture, notch band has been additionally introduced in stopband, it is suppressed that the parasitic passband of wave filter
Generation, so as to having widened the wave filter Out-of-band rejection performance significantly, make the microwave filter that there is wider Out-of-band rejection model
Enclose that (20dB Out-of-band rejections scope is about four times in centre frequency 4f0)。
3rd, the microwave filter structure simple and compact, smaller occupancy circuit size area (is that there are tradition four zero points to filter
Ripple device area 2/3), two parallel coupling structures using of the present invention, do not increase while transmission zero is introduced additionally
Circuit area, be very beneficial for Miniaturization Design.
4th, because the microwave filter uses planar structure, it is easy to integrate with other planar circuits, it also has structure letter
List, processing cost is low, fabrication cycle is short, easy to process, thus can be processed using standard PCB processing technologys.
Brief description of the drawings
Fig. 1 is the stereogram of the pcb board of the microwave filter of the wide suppression of high selectivity.
Fig. 2 is the top view of pcb board.
Fig. 3 is the upward view of pcb board.
Fig. 4 is broadband response (S parameter) figure；
Fig. 5 is narrowband response (S parameter) figure.
Wherein, 1, medium substrate；2nd, incoming feeder；3rd, the first parallel coupling structure；4th, defect sturcture；5th, wave filter is presented
Line；6th, SIR resonators；7th, metallic vias；8th, the second parallel coupling structure；9th, output feeder 9；10th, internal layer 0. 10；11st, it is outer
Layer 0. 11.
Embodiment
The embodiment of the present invention is described below, in order to which those skilled in the art understand this hair
It is bright, it should be apparent that the invention is not restricted to the scope of embodiment, for those skilled in the art,
As long as various change in the spirit and scope of the present invention that appended claim limits and determines, these changes are aobvious and easy
See, all are using the innovation and creation of present inventive concept in the row of protection.
The microwave filter of the wide suppression of the high selectivity includes carrying by conductive gluing pcb board and metal together with
Plate；Pcb board is shouted with metal support plate by the way that conduction is gluing together with, is taken out after being put into oven for baking 2 hours, baking temperature is
150 DEG C, the temperature ensure both it is fully viscous and while will not destroy metal support plate.
The size of metal support plate and the size of microwave filter are consistent, and its thickness is designed as 2mm, and using conductive
Property good copper material, while its surface has carried out gold-plated processing and imitated with keeping good electric conductivity with providing good ground connection
Fruit, the thickness of Gold plated Layer is 1um.In use, metal support plate can provide the same of reference planes as public stratum for wave filter
When for wave filter provide physical support, the fixation and measurement of instant microwave wave filter.
As shown in Figure 1, Figure 2 and Figure 3, pcb board includes medium substrate 1, and the upper and lower surface of medium substrate 1 is respectively provided with copper painting
Layer；During design, preferably medium substrate 1 uses low-loss Rogers5880, and its dielectric constant is 2.2, and loss angle tangent is
0.001, media plate thickness 0.254mm；The thickness of the copper coating of the upper and lower surface of medium substrate 1 is arranged to 0.035mm, its
In, the major part of the copper coating of the upper surface of medium substrate 1 to the upper surface of overwrite media substrate 1, the copper of the lower surface of medium substrate 1 applies
The whole surface of layer overwrite media substrate 1.
Referring again to Fig. 1, the copper coating of the upper surface of medium substrate 1 includes the incoming feeder 2 for being arranged on the both ends of medium substrate 1
With output feeder 9, incoming feeder 2 is identical with the size of output feeder 9, wherein, incoming feeder 2 and output feeder 9 are adopted
With 50 ohm microstrips, the main purpose of incoming feeder 2 and 50 ohm microstrips of use of output feeder 9 is to be convenient for measuring and be easy to
It is connected with other circuits.
Incoming feeder 2 is connected with the first parallel coupling structure 3, and output feeder 9 is connected with the second parallel coupling structure 8；It is excellent
Select the first parallel coupling structure 3 parallel with the second parallel coupling structure 8.First parallel coupling structure 3 and the second parallel coupling knot
A defect sturcture 4 is respectively provided with structure 8；Two filtering that first parallel coupling structure 3 and the second parallel coupling structure 8 pass through setting
Device feeder line 5 links together；A SIR resonator 6 is at least connected with every wave filter feeder line 5；On two wave filter feeder lines 5
It is provided with the metallic vias 7 turned on the lower surface copper coating of medium substrate 1.
This programme respectively sets two SIR resonators 6 preferably on every wave filter feeder line 5, between each SIR resonators 6
Coupled and realized using edge, the size of coupling amount is controlled by Edge Distance between two SIR resonators 6.During design, according to micro-
Centre frequency and relative bandwidth needed for wave filter, each SIR resonators are calculated by Chebyshev filter low pass prototypes
The size of coupling amount between 6, and the size of coupling distance is determined according to coupling amount size and the relation of edge coupling distance；Separately
Outside, four SIR resonators 6 and floor connect through plated-through hole, and incoming feeder 2 and defeated is connected through with input and output
Go out feeder line 9 to connect.
As shown in figure 5, two outer layers 0. 11 in four zero points (two internal layers 0. 10 and two outer layers 0. 11)
By cross coupling structure, (cross coupling structure is the structure that non-conterminous two wave filters are formed, and cross-couplings are non-two neighboring
Coupling between wave filter) to realize, the position of four zero points is determined by the coupling amount size of cross coupling structure, in two
Layer 0. 10 is determined by the first parallel coupling structure 3 and the second parallel coupling structure 8.
In addition, defect sturcture 4 is made up of half-wavelength slots cable architecture, caused using it with the characteristics of sunken frequency response specific
Zero point is produced in frequency, so as to form parasitic band suppression, finally gives the frequency response of wide Out-of-band rejection, specifically such as Fig. 5 institutes
Show.
During design, preferably SIR resonators 6 are quarter-wave resonance device；After so setting, in posting for passband upper side band
Notch band is introduced at raw passband, so as to inhibit the generation of the parasitic passband of wave filter, so as to widen the filtering significantly
Device Out-of-band rejection performance, the microwave filter is had wider Out-of-band rejection scope, (20dB Out-of-band rejection scopes are about four times in
Centre frequency 4f0)。
So far, to complete the detailed description to the microwave filter of the wide suppression of high selectivity, below then to high selectivity
The design method for the microwave filter that width suppresses is described in detail：
The design method of the microwave filter of the wide suppression of high selectivity comprises the following steps：
Obtain the centre frequency of microwave filter, pcb board medium substrate 1 relative dielectric constant and medium substrate 1
Thickness；Microwave filter centre frequency, the relative dielectric constant of medium substrate 1 of pcb board and the parameter such as thickness of medium substrate 1
It is to have been selected as needed before microwave filter is designed.
According to the relative dielectric constant and thickness of medium substrate 1, the width of calculating incoming feeder 2 and output feeder 9：
Wherein, ZcFor the characteristic impedance of feeder line, εrFor the relative dielectric constant of medium substrate 1, h is the thickness of medium substrate 1
Degree, εreFor effective dielectric constant；η is free space wave impedance, and W is the width of incoming feeder 2 or output feeder 9；Due to input
Feeder line 2 and the size of output feeder 9 be it is duplicate, herein, it is only necessary to calculate one of those.
The size of SIR resonators 6 is calculated according to the centre frequency of microwave filter：
Wherein, lrFor the size of SIR resonators 6, f0For the centre frequency of microwave filter, c is the light velocity in vacuum, εrTo be situated between
The relative dielectric constant of matter substrate 1；
According to the high low-impedance line characteristic impedance of any resonator 6 and impedance ratio, high resistant line electrical length is calculated：
θ2=arctan [Z1/(Z2tanθ1)]
Wherein, θ1For low-resistance line electrical length, θ2For high resistant line electrical length, Z1And Z2For the high low-impedance line of SIR resonators 6
Characteristic impedance；
By Chebyshev filter low pass prototypes, the coupling amount between each SIR resonators 6 is calculated；
Wherein, mI, i-1For the coupling amount between i-th of SIR resonator 6 and i+1 SIR resonators 6, FBW filters for microwave
The relative bandwidth of ripple device, giFor low-pass prototype parameter, n is the number of SIR resonators 6,1≤i≤n-1；
Defect sturcture 4 is added on microwave filter, and according to the parasitic passband design defect structure 4 of microwave filter
Size；The defects of herein, the size of structure 4 can obtain according to the parasitic passband of microwave filter, and its width is 0.2mm, length
For the half wavelength of the parasitic passband of microwave filter.
Emulated using 3 D electromagnetic to the width of calculated value incoming feeder 2, the width of output feeder 9, the size of resonator, high resistant
The size of coupling amount and defect sturcture 4 between line electrical length, each resonator optimizes.
When the frequency response of all calculated values is equal to setting value (setting value herein is 20dB), after output optimization
Coupling amount between the width of incoming feeder 2, the width of output feeder 9, the size of resonator, high resistant line electrical length, each resonator
With the size of defect sturcture 4.
During design, preferably η is 377, θ1For π/4；When the number of SIR resonators 6 is four, low-pass prototype parameter g0=
1, g1=1.1088, g2=1.3062, g3=1.7704, g4=0.8181, g5=1.3554.
In summary, this programme, which uses, etches quarter-wave resonance device pattern to form SIR on double-sided copper-clad pcb board
Resonator 6, on the one hand ensure that the planar structure of microwave filter, it is easy to integrate with other planar circuits, on the other hand by
Standard pcb board processing technology is used in it, the process-cycle is short, is advantageous to application to engineering practice.
By the way of two parallel coupling structures, while microwave filter miniaturization is maintained, also filtered in microwave
Ripple device passband both sides introduce the frequency selectivity that extra transmission zero improves microwave filter.Introduced and fallen into using defect sturcture 4
Wave point mode, wider Out-of-band rejection scope is obtained while microwave filter high selectivity is maintained.
Claims (8)
1. the microwave filter of the wide suppression of high selectivity, it is characterised in that：Including by the conductive gluing pcb board with together with
Metal support plate；The pcb board includes medium substrate, and the upper and lower surface of the medium substrate is respectively provided with copper coating；The medium base
The copper coating of plate upper surface includes the incoming feeder and output feeder for being arranged on medium substrate both ends, the incoming feeder and first
Parallel coupling structure is connected, and the output feeder is connected with the second parallel coupling structure；
A defect sturcture is respectively provided with the first parallel coupling structure and the second parallel coupling structure；Described first is parallel
Two wave filter feeder lines that coupled structure and the second parallel coupling structure are set by cross-couplings link together；Described in every
A SIR resonator is at least connected with wave filter feeder line；It is provided with and medium substrate following table on two wave filter feeder lines
The metallic vias of face copper coating conducting.
2. the microwave filter of the wide suppression of high selectivity according to claim 1, it is characterised in that：The medium substrate is adopted
With low-loss Rogers5880, its relative dielectric constant is 2.2, loss angle tangent 0.001, and dielectric substrate thickness is
0.254mm。
3. the microwave filter of the wide suppression of high selectivity according to claim 1, it is characterised in that：The SIR resonators
For quarter-wave resonance device.
4. the microwave filter of the wide suppression of high selectivity according to claim 1, it is characterised in that：The incoming feeder and
Output feeder uses 50 ohm microstrips.
5. according to the microwave filter of any described wide suppression of high selectivity of claim 1-4, it is characterised in that：The metal
Support plate is made of copper material, and its surface is coated with gold plating.
6. a kind of design method of the microwave filter of any described wide suppression of high selectivity of claim 1-5, its feature exist
In comprising the following steps：
Obtain centre frequency, the relative dielectric constant of medium substrate and the thickness of the medium substrate of pcb board of microwave filter
Degree；
According to the relative dielectric constant and thickness of the medium substrate, the width of calculating incoming feeder and output feeder：
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Wherein, ZcFor the characteristic impedance of feeder line, εrFor the relative dielectric constant of medium substrate, h is the thickness of medium substrate, εreFor
Effective dielectric constant；η is free space wave impedance, and W is the width of incoming feeder or output feeder；
The size of SIR resonators is calculated according to the centre frequency of the microwave filter：
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Wherein, lrFor SIR resonator dimensions, f0For the centre frequency of microwave filter, c is the light velocity in vacuum, εrFor medium substrate
Relative dielectric constant；
According to the impedance of the high low-impedance line of SIR resonators and impedance ratio, high resistant line electrical length is calculated：
θ2=arctan [Z1/(Z2tanθ1)]
Wherein, θ1For low-resistance line electrical length, θ2For high resistant line electrical length, Z1And Z2Hindered for the feature of the high low-impedance line of SIR resonators
It is anti-；
By Chebyshev filter low pass prototypes, the coupling amount between each SIR resonators is calculated；
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Wherein, mI, i+1For the coupling amount between i-th of SIR resonator and i+1 SIR resonators, FBW is microwave filter
Relative bandwidth, giFor low-pass prototype parameter, n is the number of SIR resonators, 1≤i≤n-1；
Defect sturcture, and the size of the parasitic passband design defect structure according to microwave filter are added on microwave filter；
It is long to calculated value incoming feeder width, output feeder width, the size of resonator, high resistant line electricity using 3 D electromagnetic emulation
The size of coupling amount and defect sturcture between degree, each resonator optimizes；
When the frequency response of all calculated values is equal to setting value, the incoming feeder width, output feeder after output optimization are wide
The size of coupling amount and defect sturcture between degree, the size of resonator, high resistant line electrical length, each resonator.
7. the design method of the microwave filter of the wide suppression of high selectivity according to claim 6, it is characterised in that：It is described
η is 377, θ1For π/4；The width of the defect sturcture is 0.2mm, and length is the half of the parasitic passband of microwave filter
Wavelength.
8. the design method of the microwave filter of the wide suppression of high selectivity according to claim 7, it is characterised in that：When
When the number of SIR resonators is four, low-pass prototype parameter g0=1, g1=1.1088, g2=1.3062, g3=1.7704, g4=
0.8181, g5=1.3554.
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| CN111129675A (en) * | 2019-12-30 | 2020-05-08 | 西安石油大学 | Wide stop band suppression broadband filter |
| CN111144033A (en) * | 2020-01-15 | 2020-05-12 | 河南师范大学 | Design method of high-selectivity broadband band-pass filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060014279A (en) * | 2004-08-10 | 2006-02-15 | 아주대학교산학협력단 | Compact and high performance lowpass filter using complementarily combined characteristics of slot and open stub |
| CN101986456A (en) * | 2010-11-05 | 2011-03-16 | 华南理工大学 | Ultra wide band filter with trap characteristics |
| CN202121040U (en) * | 2011-07-14 | 2012-01-18 | 上海大学 | High defect coplanar waveguide double-frequency filter |
| KR20120054922A (en) * | 2010-11-22 | 2012-05-31 | 숭실대학교산학협력단 | Ultra-wideband band pass filter with notch band |
| CN204067532U (en) * | 2014-09-16 | 2014-12-31 | 电子科技大学 | A kind of double frequency band-pass filter based on defect microstrip line |
-
2015
- 2015-11-30 CN CN201510855104.5A patent/CN105449326B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060014279A (en) * | 2004-08-10 | 2006-02-15 | 아주대학교산학협력단 | Compact and high performance lowpass filter using complementarily combined characteristics of slot and open stub |
| CN101986456A (en) * | 2010-11-05 | 2011-03-16 | 华南理工大学 | Ultra wide band filter with trap characteristics |
| KR20120054922A (en) * | 2010-11-22 | 2012-05-31 | 숭실대학교산학협력단 | Ultra-wideband band pass filter with notch band |
| CN202121040U (en) * | 2011-07-14 | 2012-01-18 | 上海大学 | High defect coplanar waveguide double-frequency filter |
| CN204067532U (en) * | 2014-09-16 | 2014-12-31 | 电子科技大学 | A kind of double frequency band-pass filter based on defect microstrip line |
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| CN105449326A (en) | 2016-03-30 |
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