CN111144033A - Design method of high-selectivity broadband band-pass filter - Google Patents
Design method of high-selectivity broadband band-pass filter Download PDFInfo
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- CN111144033A CN111144033A CN202010039617.XA CN202010039617A CN111144033A CN 111144033 A CN111144033 A CN 111144033A CN 202010039617 A CN202010039617 A CN 202010039617A CN 111144033 A CN111144033 A CN 111144033A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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Abstract
The invention discloses a design method of a high-selectivity broadband band-pass filter, which structurally comprises a parallel coupling microstrip line, a double resonator, an input/output feeder line and an input/output port, wherein the parallel coupling microstrip line, the double resonator and the input/output feeder line are mutually connected in parallel, and the input/output feeder line is connected with the input/output port in series. The filter designed by the invention can realize the advantages of broadband, high selectivity and the like, and can well solve the spectrum interference in the radio frequency communication industry.
Description
Technical Field
The invention belongs to the technical field of radio frequency filtering, and particularly relates to a design method of a high-selectivity broadband band-pass filter.
Background
The rapid development of mobile wireless networks continuously generates new frequency bands, and the increase of the frequency bands can cause interference between adjacent frequency bands, thereby causing the reduction of communication quality. Therefore, it is desirable to design a filter with high selectivity to solve the above problems.
Disclosure of Invention
The invention aims to provide a design method of a high-selectivity broadband band-pass filter for solving the problem of communication quality reduction caused by frequency band interference.
The invention adopts the following technical scheme for solving the technical problems, and the design method of the high-selectivity broadband band-pass filter is characterized by comprising the following steps of: the structure of the high-selectivity broadband band-pass filter comprises a parallel coupling microstrip line, a double resonator, an input/output feeder line and an input/output port, wherein the parallel coupling microstrip line, the double resonator and the input/output feeder line are connected in parallel, and the input/output feeder line is connected with the input/output port in series;
the specific design process is as follows: according to technical indexes BW and center frequency f given by users0Calculating the characteristic impedance of the odd-even mode of the coupling microstrip line by adopting the formulas (1) to (4):
Ze=Z0(1+D+D2) (3)
Zo=Z0(1-D+D2) (4)
where FEW is the relative bandwidth of the filter, BW is the bandwidth of the filter, f0Is the center frequency of the filter, g0、g1Ze is the even mode impedance of the coupling microstrip line, and Zo is the odd mode impedance of the coupling microstrip line;
calculating the characteristic impedance of the double resonator according to the bandwidth BW by adopting the following formulas (5) to (6):
fZ2=2f0-f1(6)
wherein f isZ1Is the zero point near the lower passband, fZ2Is the zero point near the upper passband;
the electrical lengths theta of the coupling microstrip line, the double resonator and the input and output feeder line are pi/2;
and obtaining each impedance parameter of the filter by the design steps, further determining the structural parameter of the filter, modeling according to the structure of the filter by using the structural parameter value of the filter, and performing electromagnetic simulation optimization to enable the performance of the filter to finally meet the requirement of user indexes.
Further preferably, a wide center frequency f is designed0At 4GHz, the passband is [2.86,5.14 ]]The GHz filter calculates the even-odd mode characteristic impedance Ze of the coupled microstrip line 282.32 Ω and Zo 111.04 Ω from the expressions (1) to (4), calculates the impedance Z1 of the dual resonator 48.87 Ω and Z2 of the dual resonator 67 Ω from the expressions (5) to (6);
using the impedance parameters calculated above, the RO4232 substrate from Rogers was selected, the dielectric constant was 3.2, the substrate thickness was 0.308mm, and the loss tangent was 0.001, and the values of the structural parameters of the filter were W0-1.15 mm, L0-11.84 mm, W1-0.1 mm, L1-13.69 mm, S1-0.2 mm, W2-0.73 mm, L2-11.82 mm, W3-0.42 mm, and L3-12.12 mm;
modeling based on the structural parameters obtained by the calculation, performing electromagnetic simulation, optimizing the performance of the filter by means of the electromagnetic simulation, finely adjusting the structural parameters of the filter, and finally determining the structural parameters of the microstrip filter as follows: w0-1.15 mm, L0-11.79 mm, W1-0.16 mm, S1-0.15 mm, L1-12.2 mm, W2-0.86 mm, L2-12.3 mm, W3-0.56 mm, L3-11.5 mm.
Compared with the prior art, the invention has the following beneficial effects: the filter designed by the invention can realize the advantages of broadband, high selectivity and the like, and can well solve the spectrum interference in the radio frequency communication industry.
Drawings
Fig. 1 is a schematic structural diagram of a high-selectivity broadband bandpass filter proposed by the present invention;
FIG. 2 is a layout of a high selectivity broadband bandpass filter proposed by the present invention;
fig. 3 is a simulated amplitude-frequency response diagram of the high selectivity broadband bandpass filter proposed by the present invention.
In the figure: 1-coupling microstrip line, 2-double resonator, 3-input/output feeder line and 4-input/output port.
Detailed Description
The present invention is described in further detail below with reference to examples, but it should not be construed that the scope of the above subject matter of the present invention is limited to the following examples, and that all the technologies realized based on the above subject matter of the present invention belong to the scope of the present invention.
Examples
The impedance parameters of the parallel coupling microstrip line 1 in the high-selectivity broadband band-pass filter designed by the invention are determined by the central frequency and the bandwidth of the filter, and the double-resonator 2 adjusts the zero point near the passband to determine the selectivity of the filter. The structure of the filter in the design method comprises a parallel coupling microstrip line 1, a double resonator 2, an input/output feeder line 3 and an input/output port 4. The parallel coupling microstrip line 1, the double resonator 2 and the input/output feeder line 3 are connected in parallel; the input output feeder 3 and the terminal input output port 4 are connected in series.
By way of illustration, without loss of generality, a wide center frequency f is designed in this way0At 4GHz, the passband is [2.86,5.14 ]]A filter of GHz. According to the technical index, the even-odd mode characteristic impedance Ze of the coupled microstrip line is calculated to 282.32 Ω and Zo is calculated to 111.04 Ω according to the expressions (1) to (4). The impedance Z1 of the double resonator is 48.87 Ω, and Z2 is 67 Ω, calculated by equations (5) to (6).
By way of illustration, without loss of generality, Rogers' RO4232 substrate was selected, with a dielectric constant of 3.2, a substrate thickness of 0.308mm, and a loss tangent of 0.001. Using the impedance parameters calculated above, the values of the structural parameters of the filter can be calculated as W0-1.15 mm, L0-11.84 mm, W1-0.1 mm, L1-13.69 mm, S1-0.2 mm, W2-0.73 mm, L2-11.82 mm, W3-0.42 mm, and L3-12.12 mm.
Modeling based on the structural parameters obtained by the calculation, performing electromagnetic simulation, optimizing the performance of the filter by means of the electromagnetic simulation, finely adjusting the structural parameters of the filter, and finally determining the structural parameters of the microstrip filter as follows: w0-1.15 mm, L0-11.79 mm, W1-0.16 mm, S1-0.15 mm, L1-12.2 mm, W2-0.86 mm, L2-12.3 mm, W3-0.56 mm, L3-11.5 mm, as shown in fig. 2. The performance of the optimized filter meets the technical index, as shown in fig. 3.
The foregoing embodiments illustrate the principles, principal features and advantages of the invention, and it will be understood by those skilled in the art that the invention is not limited to the foregoing embodiments, which are merely illustrative of the principles of the invention, and that various changes and modifications may be made therein without departing from the scope of the principles of the invention.
Claims (2)
1. A design method of a high-selectivity broadband band-pass filter is characterized by comprising the following steps: the structure of the high-selectivity broadband band-pass filter comprises a parallel coupling microstrip line, a double resonator, an input/output feeder line and an input/output port, wherein the parallel coupling microstrip line, the double resonator and the input/output feeder line are connected in parallel, and the input/output feeder line is connected with the input/output port in series;
the specific design process is as follows: according to technical indexes BW and center frequency f given by users0Calculating the characteristic impedance of the odd-even mode of the coupling microstrip line by adopting the formulas (1) to (4):
Ze=Z0(1+D+D2) (3)
Zo=Z0(1-D+D2) (4)
where FEW is the relative bandwidth of the filter, BW is the bandwidth of the filter, f0Is the center frequency of the filter, g0、g1Ze is the even mode impedance of the coupled microstrip line and Zo is the low pass prototype parameter of the filterOdd mode impedance of the coupling microstrip line;
calculating the characteristic impedance of the double resonator according to the bandwidth BW by adopting the following formulas (5) to (6):
fZ2=2f0-f1(6)
wherein f isZ1Is the zero point near the lower passband, fZ2Is the zero point near the upper passband;
the electrical lengths theta of the coupling microstrip line, the double resonator and the input and output feeder line are pi/2;
and obtaining each impedance parameter of the filter by the design steps, further determining the structural parameter of the filter, modeling according to the structure of the filter by using the structural parameter value of the filter, and performing electromagnetic simulation optimization to enable the performance of the filter to finally meet the requirement of user indexes.
2. The method of claim 1, wherein: designing a wide center frequency f0At 4GHz, the passband is [2.86,5.14 ]]The GHz filter calculates the even-odd mode characteristic impedance Ze of the coupled microstrip line 282.32 Ω and Zo 111.04 Ω from the expressions (1) to (4), calculates the impedance Z1 of the dual resonator 48.87 Ω and Z2 of the dual resonator 67 Ω from the expressions (5) to (6);
using the impedance parameters calculated above, the RO4232 substrate from Rogers was selected, the dielectric constant was 3.2, the substrate thickness was 0.308mm, and the loss tangent was 0.001, and the values of the structural parameters of the filter were W0-1.15 mm, L0-11.84 mm, W1-0.1 mm, L1-13.69 mm, S1-0.2 mm, W2-0.73 mm, L2-11.82 mm, W3-0.42 mm, and L3-12.12 mm;
modeling based on the structural parameters obtained by the calculation, performing electromagnetic simulation, optimizing the performance of the filter by means of the electromagnetic simulation, finely adjusting the structural parameters of the filter, and finally determining the structural parameters of the microstrip filter as follows: w0-1.15 mm, L0-11.79 mm, W1-0.16 mm, S1-0.15 mm, L1-12.2 mm, W2-0.86 mm, L2-12.3 mm, W3-0.56 mm, L3-11.5 mm.
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Publication number | Priority date | Publication date | Assignee | Title |
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CN114826187A (en) * | 2022-03-29 | 2022-07-29 | 清华大学 | Filter and electronic device |
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KR20130091370A (en) * | 2012-02-07 | 2013-08-19 | 연세대학교 산학협력단 | Dual-band filter using stepped-impedance and design method thereof |
CN104241750A (en) * | 2014-09-16 | 2014-12-24 | 电子科技大学 | Dual-frequency band-pass filter based on defect micro-strip lines |
CN105449326A (en) * | 2015-11-30 | 2016-03-30 | 成都亿豪智科技有限公司 | High-selectivity and wide-suppression microwave filter and design method therefor |
CN106169635A (en) * | 2016-08-13 | 2016-11-30 | 南京理工大学 | A kind of pocket super-broadband band filter with trap characteristic |
CN106571507A (en) * | 2016-11-14 | 2017-04-19 | 南京理工大学 | Multifunctional reconfigurable filter based on principle of signal interference |
CN107146932A (en) * | 2017-06-27 | 2017-09-08 | 南京理工大学 | Ultra wide band bandpass filter based on parallel coupled line |
CN107196024A (en) * | 2017-04-15 | 2017-09-22 | 深圳市景程信息科技有限公司 | Broadband band-pass filter with broadband Out-of-band rejection |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130091370A (en) * | 2012-02-07 | 2013-08-19 | 연세대학교 산학협력단 | Dual-band filter using stepped-impedance and design method thereof |
CN104241750A (en) * | 2014-09-16 | 2014-12-24 | 电子科技大学 | Dual-frequency band-pass filter based on defect micro-strip lines |
CN105449326A (en) * | 2015-11-30 | 2016-03-30 | 成都亿豪智科技有限公司 | High-selectivity and wide-suppression microwave filter and design method therefor |
CN106169635A (en) * | 2016-08-13 | 2016-11-30 | 南京理工大学 | A kind of pocket super-broadband band filter with trap characteristic |
CN106571507A (en) * | 2016-11-14 | 2017-04-19 | 南京理工大学 | Multifunctional reconfigurable filter based on principle of signal interference |
CN107196024A (en) * | 2017-04-15 | 2017-09-22 | 深圳市景程信息科技有限公司 | Broadband band-pass filter with broadband Out-of-band rejection |
CN107146932A (en) * | 2017-06-27 | 2017-09-08 | 南京理工大学 | Ultra wide band bandpass filter based on parallel coupled line |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114826187A (en) * | 2022-03-29 | 2022-07-29 | 清华大学 | Filter and electronic device |
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