CN106711334A - Solar battery containing perovskite material and preparation method of solar battery - Google Patents
Solar battery containing perovskite material and preparation method of solar battery Download PDFInfo
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Abstract
The invention discloses a solar battery containing a perovskite material and a preparation method of the solar battery. The perovskite solar battery comprises a light-transmitting layer, a transparent electrode layer, a transition layer, a light absorption layer, an electron absorption layer, a hole transmission layer and a top electrode, which are stacked in sequence, wherein the transition layer is oxide of nickel; the light absorption layer is made of a material with a perovskite structure; the electron absorption layer is composed of a fullerene derivative; the hole transportation layer is composed of ternary oxide; the top electrode is made of a material with a good conductive property. According to the solar battery disclosed by the invention, performances of the perovskite material are effectively utilized, and the photoelectric conversion efficiency of the perovskite solar battery is improved to 20 percent or more; the solar battery is suitable for large-batch production.
Description
Technical field
The invention belongs to perovskite area of solar cell, particularly a kind of high stability sun comprising perovskite material
Energy battery and preparation method thereof.
Background technology
The current commercial solar cell prevailing silicon solar cell of in the market, i.e., turned using crystalline silicon as photoelectricity
The material of change.Perovskite solar cell is a class solar cell more novel at present, mainly uses similar ABX (A=
CH NH+etc.;B=Pb2+, Sn2+ etc.;X=Cl-, Br-, I- etc.) photovoltaic material with perovskite structure realizes
Opto-electronic conversion.In recent years, people's research finds that this kind of cell photoelectric transformation efficiency is high, low cost.Promise to be low cost
Commercial solar cell of future generation.
The A of Chinese invention patent CN 104795501 disclose a kind of perovskite solar cell and preparation method thereof, the calcium
Titanium ore solar cell is by FTO transparent conducting glass substrate, electron transfer layer, light-absorption layer, hole transmission layer and metal electrode group
Into, its light-absorption layer is the perovskite material of two-dimensional layered structure, and the invention prepares Layered Perovskite light-absorption layer using spin-coating method,
Preparation method is simple, and filming performance is good, and the extinction layer material is with the change of the number of plies, and its band gap is adjustable, and with preferable
Chemical stability, the material exposes 30 days without chemical breakdown under air humidity (50-80%) higher, and remains in that good
Good layer structure, excellent performance and stabilization, but its transformation efficiency is than relatively low.
Chinese invention patent CN104810479A discloses a kind of solar cell and preparation method.Avoid existing calcium
The need for titanium ore cell making process is to high temperature, while avoiding current perovskite battery will use the shortcoming of lead.The invention is carried
A kind of tin perovskite structure flexible solar battery is supplied, conductive substrates, anode, electron transfer layer, suction have been followed successively by from top to bottom
Layer, hole transmission layer, silver are received, wherein electron transfer layer is nano oxidized aluminium film, and absorbed layer is tin perovskite structure absorbed layer.
The invention does electron transfer layer using nano aluminium oxide, and absorbed layer is done with tin perovskite like structure, and its electron transfer layer is grasped under 150 °C
Make to complete, while reducing the use of lead.Its transformation efficiency is less than 14%.
The A of Chinese invention patent CN 104701023 disclose a kind of perovskite solar cell carbon electrode material and its
Preparation method, compact titanium dioxide film electron transfer layer is prepared using sprayed on membrane method in electrically conducting transparent substrate, is then existed
The organic metal halide of perovskite structure is prepared on compact titanium dioxide film as light absorbing zone, then by sprayed on membrane
Method prepares hole transmission layer/carbon electrode layer on perovskite thin film light absorbing zone, and the C film for obtaining as perovskite is too
The carbon electrode layer of positive energy battery.The invention substitutes expensive noble metal as hole transport electrode material using carbon material, reduces
Cost.Cost is further saved using sprayed on membrane method that is simple, quick, being produced on a large scale, and solves perovskite too
Positive energy battery electrode high cost, vacuum evaporation prepare the problem that metal electrode method is difficult to large-scale production, it is adaptable to low
Temperature prepares the electrode material of large area perovskite solar cell.The transformation efficiency of the battery of the invention is less than 7%.
The B of Chinese invention patent CN 104091889 disclose a kind of semiconductor perovskite solar cell and its preparation side
Method, the invention belongs to area of solar cell, solves that existing perovskite solar cell material is expensive, complex process asks
Topic, while keeping photoelectric transformation efficiency higher.A kind of semiconductor perovskite solar cell of the invention, from bottom to top according to
It is secondary including substrate, conductive layer, hole blocking layer, mesoporous electronics collecting layer, mesoporous hole collection layer, mesoporous dorsum electrode layer, its
Preparation method includes preparing electrode district, preparing hole blocking layer, prepare mesoporous electronics collecting layer, prepare mesoporous hole collection
Layer, prepare mesoporous dorsum electrode layer and injection perovskite light absorbent step;Another semiconductor perovskite sun of the invention
Can battery, increased mesoporous insulating barrier, its preparation method accordingly increases and prepares mesoporous insulating barrier step.The present invention solves existing
There are material expensive, the problem of complex process of perovskite solar cell;Open-circuit voltage, short circuit current in battery and fill out
Factor several respects are filled all to be improved.Photoelectric transformation efficiency can reach 11.3%.
Foregoing invention progressively constantly advances perovskite solar cell to industrialization, and but, the industrialization of perovskite takes
Certainly in two conditions, one is low cost of manufacture, but its transformation efficiency is high, and its efficiency is all also below 15% at present.And
And, because current perovskite battery is easier to be formed to oxygen sensitive, defect, cause perovskite stability test poor, find more
The perovskite solar battery structure of high stable is the target of people's concerted effort.Find higher efficiency, stability higher too
Positive energy battery structure is the focus of people's work.
The content of the invention：
Goal of the invention：In order to make full use of the property of perovskite material, preparation can be used for the perovskite solar cell for producing,
The invention provides a kind of high stability solar cell comprising perovskite material and preparation method thereof.Using electricity of the invention
Pond material and its structure, can greatly improve absorption and its transformation efficiency of the solar cell to photon, so as to improve solar energy
The electricity conversion of battery, improves the stability of battery, improves device performance.
Technical scheme is as follows：
1) glass using light transmittance more than 90% is used as photic zone；
2) using electro-conductive glass as transparent electrode layer；
3) transition zone is prepared：The oxide skin(coating) of nickel is prepared in conductive glass surface using spray pyrolysis technology.Thickness control exists
In the range of 5-50nm；
4) light-absorption layer is prepared：
A. PbI2 solution is prepared, the concentration of PbI2 is 0.5-3.0Mol/L, and solvent is dimethylformamide；
B. CH3NH3I solution is prepared：Concentration 10mg/mL, solvent is isopropanol；
Using solwution method fabricated in situ perovskite material：First the spin coating PbI2 solution on transition zone, is put into CH3NH3I after drying
Immersion grows perovskite material in solution, obtains perovskite light-absorption layer, is then carried out at compressing tablet in the presence of 5 atmospheric pressure
Reason；By controlling concentration, the pressure of PbI2 and CH3NH3I reaction solutions, the pattern and thickness of perovskite are controlled, thickness control exists
Between 20-100nm；
5）Prepare Electron absorption layer：
Light-absorption layer is spun on using the chlorobenzene solution of fullerene derivate, is dried, obtain Electron absorption layer, control the concentration of solution
With coating thickness, make Electron absorption layer thickness between 30-150nm；
6）Prepare hole transmission layer：
By titanium isopropoxide（Or double (levulinic ketone group) diisopropyl titanate precursor solution）With the mixing of ethanol niobium,
Stir, be spun on Electron absorption layer；
7）The preparation of top electrode：
Using methods such as vacuum thermal evaporation, spraying, depositions, the conductive metal layer or carbon of 50-300nm are deposited with device upper surface
Layer.
The material of perovskite solar cell transparent electrode layer of the invention is transparent and can be conductive material composition, including
But it is not limited to indium tin oxide (ITO, Indium Tin Oxides), fluorine tin-oxide (FTO, fluorine doped tin
Oxide), the conventional transparent electrode material such as aluminium zinc oxide (AZO, aluminium-doped zinc oxide).Transition zone
It is the oxide of Ni, including but not limited to NiO, NiO2.Light-absorption layer is the material with perovskite structure, the perovskite for being used
Structure photovoltaic material is the organic inorganic hybridization perovskite of ABX3 type crystal structures.Wherein, B is lead, tin, antimony, and X is halogen
Element.Electron absorption layer is the derivative of fullerene, including but not limited to PCBM, PC71BM.Hole transmission layer is aoxidized by ternary
Thing is constituted, comprising tri- kinds of elements of Ti, Nb, O, and Nb/Ti mol ratio between 1：30 and 1：Between 10.Top electrode is metal electrode
Or conductive carbon material electrode, such as silver, gold, copper, graphite, Graphene.
Beneficial effect：
Using material of the invention and structure, the performance of perovskite material can be made full use of, and excavate its potential, form P-
I-N hetero-junctions, fully absorbs solar energy and improves its conversion ratio, and its transformation efficiency reaches as high as more than 20%.The present invention is adopted
With the nickeliferous transition zone of nanoscale, P-I-N hetero-junctions can not only be lifted and flutter the ability for obtaining and absorbing photon, and greatly promoted
The time stability of the battery.It is of the invention main using industrial ripe rubbing method, be adapted to industrialization production large scale, low
The production of cost, efficient solar cell.The present invention does not use electron transfer layer, and carries out compressing tablet process to perovskite,
Its density is improved, the pin-free battery layers of densification are obtained in that, so as to possess more preferable barrier to oxygen, the steady of battery is improved
It is qualitative.At present, perovskite battery transformation efficiency typically decay more than 50% after 20 days in the environment that humidity is 55%, and it is of the invention
Battery attenuation rate less than 10%.The existing solar cell containing perovskite material not yet obtains large area and can be used to give birth to
The sample of product, the present invention solves this problem, and the technology invented is suitable for preparing large area, high efficiency, high stability
Solar cell.
Specific embodiment：
Device of the invention and preparation method thereof is described in detail below by embodiment, but be not construed as limiting the invention.
Embodiment 1
1）Using low iron glass as photic zone；
2）Using ITO（Indium Tin Oxides) electro-conductive glass is used as transparent electrode layer；
3）Using spray pyrolysis technology NiO2 layers is prepared in conductive glass surface.Thickness 8nm；
4）Prepare light-absorption layer：
A. PbI2 solution is prepared, concentration is 1.5Mol/L, and solvent is dimethylformamide；
B. CH3NH3I solution is prepared：Concentration 8.5mg/mL, solvent is isopropanol；
Using solwution method fabricated in situ perovskite material：First the spin coating PbI2 solution on transition zone, is put into CH3NH3I after drying
Immersion grows perovskite material in solution, obtains perovskite light-absorption layer, is then carried out at compressing tablet in the presence of 5 atmospheric pressure
Reason；Thickness 40nm；
5）Prepare Electron absorption layer
Light-absorption layer is spun on using the chlorobenzene solution of PCBM, is dried, obtained thickness 93nm and obtain Electron absorption layer；
6）Prepare hole transmission layer：
Titanium isopropoxide and ethanol niobium are pressed 25：The mixing of 1 ratio, stirs, and is spun on Electron absorption layer, obtains sky
Cave transport layer；
7）The preparation of top electrode：
The silver layer of 50nm is deposited with hole transmission layer using the method for vacuum thermal evaporation.
Battery performance test is carried out, is used at 100mW/cm2 solar simulators (Newport) in experimentation
Carried out under AM1.5G illumination, it is 19.8% to measure optoelectronic transformation efficiency.Kept in 20 degrees Celsius of temperature, the environment that humidity is 55%
After 20 days, it is 18.2% to test its transformation efficiency.
Embodiment 2
1）Using low iron glass as photic zone；
2）Using aluminium zinc oxide AZO electro-conductive glass as transparent electrode layer；
3）Using spray pyrolysis technology NiO2 layers is prepared in conductive glass surface.Thickness 50nm；
4）Prepare light-absorption layer：
A. PbI2 solution is prepared, concentration is 0.5Mol/L, and solvent is dimethylformamide；
B. CH3NH3I solution is prepared：Concentration 10mg/mL, solvent is isopropanol；
Using solwution method fabricated in situ perovskite material：First the spin coating PbI2 solution on transition zone, is put into CH3NH3I after drying
Immersion grows perovskite material in solution, obtains perovskite light-absorption layer, is then carried out at compressing tablet in the presence of 5 atmospheric pressure
Reason；Thickness 100nm；
5）Prepare Electron absorption layer
Light-absorption layer is spun on using the chlorobenzene solution of PC71BM, is dried, obtain the Electron absorption layer of thickness 30nm；
6）Prepare hole transmission layer：
Titanium isopropoxide and ethanol niobium are pressed 20：The mixing of 1 ratio, stirs, and is spun on Electron absorption layer, obtains sky
Cave transport layer；
7）The preparation of top electrode：
The silver layer of 260nm is deposited with hole transmission layer using the method for hot evaporation.
Battery performance test is carried out, is used at 100mW/cm2 solar simulators (Newport) in experimentation
Carried out under AM1.5G illumination, it is 20.1% to measure optoelectronic transformation efficiency.Kept in 20 degrees Celsius of temperature, the environment that humidity is 55%
After 20 days, it is 18.9% to test its transformation efficiency.
Embodiment 3
1) using low iron glass as photic zone；
2) fluorine tin-oxide is used（FTO, fluorine doped tin oxide）Electro-conductive glass makees transparent electrode layer；
3）Using spray pyrolysis technology at conductive glass surface NiO2 layers.Thickness 6nm；
4）Prepare light-absorption layer：
A. PbI2 solution is prepared, concentration is 2.3Mol/L, and solvent is dimethylformamide；
B. CH3NH3I solution is prepared：Concentration 7.5mg/mL, solvent is isopropanol；
Using solwution method fabricated in situ perovskite material：First the spin coating PbI2 solution on transition zone, is put into CH3NH3I after drying
Immersion grows perovskite material in solution, obtains perovskite light-absorption layer, is then carried out at compressing tablet in the presence of 5 atmospheric pressure
Reason；Thickness 62nm；
5）Prepare Electron absorption layer
It is spun on light-absorption layer using the chlorobenzene solution of PCBM, is dried, obtains the Electron absorption layer of thickness 150nm；
6）Prepare hole transmission layer：
Double (levulinic ketone group) diisopropyl titanate precursor solution are pressed 10 with the mixing of ethanol niobium：1 ratio
Mixing, stirs, and is spun on Electron absorption layer, obtains hole transmission layer；
7）The preparation of top electrode：
The silver layer of 300nm is deposited with hole transmission layer using the method for vacuum thermal evaporation.
Battery performance test is carried out, is used at 100mW/cm2 solar simulators (Newport) in experimentation
Carried out under AM1.5G illumination, it is 19.1% to measure optoelectronic transformation efficiency.Kept in 20 degrees Celsius of temperature, the environment that humidity is 55%
After 20 days, it is 17.8% to test its transformation efficiency.
Embodiment 4
1）Using low iron glass as photic zone；
2）Using ITO electro-conductive glass as transparent electrode layer；
3）NiO layer, thickness 35nm are prepared in conductive glass surface using spray pyrolysis technology；
4）Prepare light-absorption layer：
A. PbI2 solution is prepared, concentration is 3.0Mol/L, and solvent is dimethylformamide；
B. CH3NH3I solution is prepared：Concentration 5mg/mL, solvent is isopropanol；
Using solwution method fabricated in situ perovskite material：First the spin coating PbI2 solution on transition zone, is put into CH3NH3I after drying
Immersion grows perovskite material in solution, obtains perovskite light-absorption layer, is then carried out at compressing tablet in the presence of 5 atmospheric pressure
Reason；Thickness 20nm；
5）Prepare Electron absorption layer
Light-absorption layer is spun on using the chlorobenzene solution of PCBM, is dried, obtain the Electron absorption layer of thickness 83nm；
6）Prepare hole transmission layer：
Titanium isopropoxide and ethanol niobium are pressed 30：The mixing of 1 ratio, stirs, and is spun on Electron absorption layer, obtains sky
Cave transport layer；
7）The preparation of top electrode：
The silver layer of 150nm is deposited with hole transmission layer using the method for vacuum thermal evaporation.
Battery performance test is carried out, is used at 100mW/cm2 solar simulators (Newport) in experimentation
Carried out under AM1.5G illumination, it is 19.1% to measure optoelectronic transformation efficiency.Kept in 20 degrees Celsius of temperature, the environment that humidity is 55%
After 20 days, it is 17.6% to test its transformation efficiency.
Embodiment 5
1) using low iron glass as photic zone；
2) using aluminium zinc oxide AZO electro-conductive glass as transparent electrode layer；
3）NiO layer is prepared in conductive glass surface using spray pyrolysis technology；Thickness control is in 15nm；
4）Prepare light-absorption layer：
A. PbI2 solution is prepared, concentration is 2.0Mol/L, and solvent is dimethylformamide；
B. CH3NH3I solution is prepared：Concentration 8mg/mL, solvent is isopropanol；
Using solwution method fabricated in situ perovskite material：First the spin coating PbI2 solution on transition zone, is put into CH3NH3I after drying
Immersion grows perovskite material in solution, obtains perovskite light-absorption layer；Finally carried out at compressing tablet in the presence of 5 atmospheric pressure
Reason；Thickness 84nm；
5）Prepare Electron absorption layer
Light-absorption layer is spun on using the chlorobenzene solution of PCBM, is dried, obtained thickness 98nm and obtain Electron absorption layer；
6）Prepare hole transmission layer：
Titanium isopropoxide and ethanol niobium are pressed 10：The mixing of 1 ratio, stirs, and is spun on Electron absorption layer, obtains sky
Cave transport layer；
7）The preparation of top electrode：
The carbon-coating of 92nm is deposited with hole transmission layer using the method for chemical deposition.
Battery performance test is carried out, is used at 100mW/cm2 solar simulators (Newport) in experimentation
Carried out under AM1.5G illumination, it is 18.6% to measure optoelectronic transformation efficiency.Kept in 20 degrees Celsius of temperature, the environment that humidity is 55%
After 20 days, it is 17.2% to test its transformation efficiency.
The above is only some examples of embodiment of the present invention, it should be pointed out that：For the technology people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (9)
1. a kind of solar cell comprising perovskite material and preparation method thereof, photic zone that the battery includes stacking gradually,
Transparent electrode layer, transition zone, light-absorption layer, Electron absorption layer, hole transmission layer and top electrode, wherein：The transition zone is nickel
Oxide；Light-absorption layer is the material with perovskite structure;The Electron absorption layer is made up of fullerene derivate;The sky
Cave transport layer is made up of ternary oxide, and the top electrode is made up of the good material of electric conductivity.
2. a kind of solar cell as claimed in claim 1, it is characterised in that the hole transmission layer is ternary oxide,
Be made up of tri- kinds of elements of Ti, Nb, O, and Nb/Ti mol ratio between 1：30 and 1：Between 10；The light-absorption layer thickness is in 20-
Between 100nm, between 30-150nm, the top electrode thickness is between 50-300nm for the Electron absorption thickness degree.
3. a kind of solar cell as claimed in claim 1, it is characterised in that its preparation method is comprised the steps of：
1）Photic zone uses glass of the light transmittance more than 90%；
2）Using electro-conductive glass as transparent electrode layer；
3）Prepare transition zone：The oxide skin(coating) of nickel is prepared in conductive glass surface using spray pyrolysis technology；
4）Prepare light-absorption layer：
A. PbI2 solution is prepared, the concentration of PbI2 is 0.5-3.0Mol/L, and solvent is dimethylformamide；
B. CH3NH3I solution is prepared：Concentration 5-10mg/mL, solvent is isopropanol；
Using solwution method fabricated in situ perovskite material：First the spin coating PbI2 solution on transition zone, is put into CH3NH3I after drying
Immersion grows perovskite material in solution, obtains perovskite light-absorption layer, is then carried out at compressing tablet in the presence of 5 atmospheric pressure
Reason；By controlling the concentration of PbI2 and CH3NH3I reaction solutions, the pattern and thickness of perovskite are controlled, thickness control is in 20-
Between 100nm；
5）Prepare Electron absorption layer：
Light-absorption layer is spun on using the chlorobenzene solution of fullerene derivate, is dried, obtain Electron absorption layer, control the concentration of solution
With coating thickness, make Electron absorption layer thickness between 30-150nm；
6）Prepare hole transmission layer：
By titanium isopropoxide（Or double (levulinic ketone group) diisopropyl titanate precursor solution）With the mixing of ethanol niobium,
Stir, be spun on Electron absorption layer；
7）The preparation of top electrode：
Using methods such as vacuum thermal evaporation, spraying, depositions, the conductive metal layer or carbon of 50-300nm are deposited with device upper surface
Layer.
4. the solar cell as described in claim 1, it is characterised in that the material of transparency electrode is transparent and can be conductive
Material constitute, including but not limited to indium tin oxide (ITO, Indium Tin Oxides), fluorine tin-oxide (FTO,
Fluorine doped tin oxide), the transparent electricity such as aluminium zinc oxide (AZO, aluminium-doped zinc oxide)
Pole material.
5. the solar cell as described in claim 1, it is characterised in that the perovskite structure photovoltaic material is ABX3
The organic inorganic hybridization perovskite of type crystal structure；Wherein, B is lead, tin, antimony, and X is halogen.
6. the solar cell as described in claim 1, it is characterised in that Electron absorption layer is the derivative of fullerene, bag
Containing but be not limited to PCBM, PC71BM.
7. the solar cell as described in claim 1, it is characterised in that the top electrode is metal electrode or carbon material electricity
Pole.
8. the solar cell as described in claim 1, it is characterised in that the thickness of transition zone is in the range of 5-50nm.
9. the solar cell as described in claim 1, it is characterised in that the photic zone is material of the light transmittance more than 90%
Material.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115320205A (en) * | 2022-08-19 | 2022-11-11 | Oppo广东移动通信有限公司 | Shell assembly, preparation method thereof and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304818A (en) * | 2015-11-24 | 2016-02-03 | 杨秋香 | High-efficiency perovskite solar cell and preparation method thereof |
| CN105304819A (en) * | 2015-11-24 | 2016-02-03 | 杨秋香 | Solar cell containing perovskite material and preparation method thereof |
| CN105336863A (en) * | 2015-11-24 | 2016-02-17 | 杨秋香 | PIN heterojunction solar cell and preparation method thereof |
| CN105355790A (en) * | 2015-11-24 | 2016-02-24 | 杨秋香 | Low cost perovskite solar cell being suitable for production |
-
2017
- 2017-02-17 CN CN201710085150.0A patent/CN106711334A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304818A (en) * | 2015-11-24 | 2016-02-03 | 杨秋香 | High-efficiency perovskite solar cell and preparation method thereof |
| CN105304819A (en) * | 2015-11-24 | 2016-02-03 | 杨秋香 | Solar cell containing perovskite material and preparation method thereof |
| CN105336863A (en) * | 2015-11-24 | 2016-02-17 | 杨秋香 | PIN heterojunction solar cell and preparation method thereof |
| CN105355790A (en) * | 2015-11-24 | 2016-02-24 | 杨秋香 | Low cost perovskite solar cell being suitable for production |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115320205A (en) * | 2022-08-19 | 2022-11-11 | Oppo广东移动通信有限公司 | Shell assembly, preparation method thereof and electronic equipment |
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Application publication date: 20170524 |