CN106711277A - 一种n型双面太阳能电池的制备方法 - Google Patents
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Abstract
本发明公开了一种N型双面太阳能电池的制备方法，避免连续高温过程对电池少子寿命的衰减，提高电池的转换效率，工艺简化。一种N型双面太阳能电池的制备方法，依次包括：S1、对N型单晶硅片进行双面制绒；S2、对步骤S1处理后的硅片的正面进行单面硼扩散；S3、清洗去除步骤S2处理后的硅片表面的硼硅玻璃；S4、在硅片的正面通过PECVD或ALD沉积氧化铝钝化层，在所述氧化铝钝化层上通过PECVD沉积氮化硅钝化减反射层；S5、对硅片的背面进行磷扩散；S6、清洗去除步骤S5处理后的硅片表面的磷硅玻璃；然后在硅片背面通过PECVD沉积氮化硅钝化减反射层；S7、对硅片刻边以将硅片正面和背面隔离；S8、在硅片的正面和背面分别印刷栅线电极，并烧结。
Description
技术领域
本发明属于太阳能电池领域，特别涉及一种N型双面太阳能电池的制备方法。
背景技术
太阳能光伏作为洁净能源的一种是未来能源解决方案的候选之一。特别是经过近年来的发展，其应用日渐广泛，工艺日趋成熟。太阳能电池是以半导体材料为基础的能量转换器件，是太阳能发电的核心部分。目前太阳能电池领域以晶硅电池的工艺技术最为成熟，产业化水平最高，晶硅太阳能电池分为P型电池和N型电池，其中N型单晶硅电池具有光致衰减小、少子寿命高、耐金属污染性能好等优点，未来效率提升方面有巨大潜力。而双面N型晶硅电池背面也能吸收转化光能，其发电量要远高于传统P型单面晶硅电池。
N型双面单晶硅电池需要在N型基底上双面掺杂，目前行业内主要使用液态硼源BBr3高温扩散、旋涂硼浆或印刷硼浆再退火扩散进行正面硼掺杂，液态POCl3 高温扩散进行背面磷掺杂，2次扩散制程间的相互掩蔽至关重要。当前的常用手段为在完成正面硼掺杂后，通过高温热氧化形成氧化硅或制作氮化硅作为正面掩膜，以减少背面磷扩过程对正面的影响。但热氧化的高温过程会影响已形成的正面PN结的质量，同时高温过程会导致硅基底的杂质浓度增加，电池体复合加剧，对电池的效率影响较大。而氮化硅做掩膜需涉及多次镀膜和清洗过程，工艺较复杂，不利于提高生产效率和降低成本。
对扩散面的钝化效果，主要通过形成致密的氧化硅和制作氮化硅膜实现。氧化硅通过高温热氧化的手段，温度高达800~1100℃，对电池的少子寿命有损害，进而影响电池效率。单纯氮化硅膜对硼扩面的钝化效果不理想。
发明内容
本发明的目的是解决上述现有技术中存在的不足和问题，提出了一种N型双面太阳能电池的制备方法，避免连续高温过程对电池少子寿命的衰减，提高电池的转换效率，工艺简化。
本发明采用的技术方案如下：
一种N型双面太阳能电池的制备方法，依次包括：
S1、对N型单晶硅片进行双面制绒；
S2、对步骤S1处理后的硅片的正面进行单面硼扩散；
S3、清洗去除步骤S2处理后的硅片表面的硼硅玻璃；
S4、在硅片的正面通过PECVD或ALD沉积氧化铝钝化层，在所述氧化铝钝化层上通过PECVD沉积氮化硅钝化减反射层；
S5、对硅片的背面进行磷扩散；
S6、清洗去除步骤S5处理后的硅片表面的磷硅玻璃；然后在硅片背面通过PECVD沉积氮化硅钝化减反射层；
S7、对硅片刻边以将硅片正面和背面隔离；
S8、在硅片的正面和背面分别印刷栅线电极，并烧结。
优选地，步骤S4中，所述氧化铝钝化层的厚度为5~30nm，所述氮化硅钝化减反射层的厚度为60~95nm。
优选地，步骤S6中，所述氮化硅钝化减反射层的厚度为60~95nm。
优选地，步骤S2中，将相邻两个硅片的背面相对放置并露出正面，采用液态BBr3扩散，扩散温度为900~970摄氏度，扩散时间为30~50min，方阻为55~75Ω/□。
优选地，步骤S2中，在硅片正面旋涂或印刷硼源进行高温扩散。
优选地，步骤S3中，采用质量浓度为5~15%的HF溶液去除硅片表面的硼硅玻璃。
优选地，步骤S4中，将相邻两个硅片的正面相对设置并露出背面，采用液态POCl3扩散，扩散温度为750~850℃，扩散时间为20~45min，方阻为30~50Ω/□。
优选地，步骤S6中，采用质量浓度为2~3%的HF溶液去除硅片表面的磷硅玻璃。
本发明采用以上方案，相比现有技术具有如下优点：
本发明提供一种更简洁的N型双面太阳能电池的制备方法，叠层钝化的工艺有助于提升电池效率，钝化过程使用低温工艺，降低表面态的复合，提高基底载流子寿命，避免了连续的高温过程对电池少子寿命的衰减，提高电池的转换效率；将掩膜与钝化工艺结合，减少了多次镀膜及反复清洗的过程，有利于大规模生产。
附图说明
附图1为本发明的一种N型双面太阳能电池的制备方法的流程示意图；
附图2为采用本发明的制备方法制得的N型双面太阳能电池。
上述附图中，
1、氮化硅钝化减反射层；2、氧化铝钝化层；3、硼扩散层；4、N型基底；5、磷扩散层；6、氮化硅钝化减反射层。
具体实施方式
下面结合附图对本发明的较佳实施例进行详细阐述，以使本发明的优点和特征能更易于被本领域的技术人员理解。
参照附图1所示，本发明的一种N型双面太阳能电池的制备方法具体如下：
S1、对N型单晶硅片通过氢氧化钠和制绒添加剂进行双面碱制绒，在硅片表面（正面和背面）形成具有陷光作用的金字塔绒面结构。这种绒面的结构的表面反射率只有9%-10%，可以起到陷光作用，提高对光的吸收。
S2、将S1处理后的硅片背对背放置进行单面硼扩散，即将相邻的硅片两两划分为一组，一组的两个硅片的背面相对放置而露出正面，采用液态BBr3扩散的方式，扩散温度为900~970℃，扩散时间为30~50min，方阻为55~75Ω/□。除此之外，还可以采用在硅片正面旋涂或印刷硼源在进行高温扩散的方式进行。
S3、用质量浓度为5~15%的HF溶液去除S2处理后的硅片表面的硼硅玻璃，硼硅玻璃是硼扩散的副产物，可用HF溶液去除。
S4、在硅片正面（硼扩面）使用PECVD或ALD沉积氧化铝（Al2O3）钝化层，厚度为5~30nm；在氧化铝钝化层上面使用PECVD制作60~95nm厚的氮化硅钝化减反射膜。PECVD（等离子体增强化学气相沉积法，Plasma Enhanced Chemical Vapor Deposition的缩写）在沉积时的温度约为200~400摄氏度，ALD（原子层沉，Atomic layer deposition的缩写）在沉积时的温度约为200~300摄氏度。
S5、将S4处理后的硅片面对面放置进行背面磷扩散，即将相邻的硅片两两划分为一组，一组的两个硅片的正面相对放置而露出背面，采用液态POCl3扩散的方式，扩散温度为750~850℃，扩散时间为20~45min，方阻为30~50Ω/□。
S6、用质量浓度为2~3%的HF稀溶液清洗磷扩面去除磷硅玻璃，因HF溶液浓度较小，对正面氮化硅膜基本无损伤；在磷扩面使用PECVD制作60~95nm厚的氮化硅钝化减反射膜。
S7、使用等刻机对硅片刻边，实现硅片正面和背面隔离
S8、采用丝网印刷的方式在硅片上下面进行栅线印刷，并进行烧结。
参照附图2所示，经上述制备方法制得的N型双面太阳能电池包括自上至下依次层叠的氮化硅钝化减反射层1、氧化铝钝化层2、硼扩散层3、N型基底4、磷扩散层5、氮化硅钝化减反射层6，其中，硅片正面扩散有硼的部分即形成所述的硼扩散层3，硅片背面扩散有磷的部分即形成所述的磷扩散层5，而位于这两层之间的硅片部分即为所述的N型基底4。
本发明提供一种更简洁的N型双面太阳能电池的制备方法，低温工艺的叠层钝化有助于提升电池效率，钝化过程为低温工艺，降低表面态的复合，提高基底载流子寿命，避免了连续的高温过程对电池少子寿命的衰减，提高电池的转换效率；简化工艺步骤，减少制作氮化硅膜的次数，将掩膜与钝化工艺结合，减少了多次镀膜及反复清洗的过程，节省去膜的清洗过程，有利于大规模生产，有利于规模化生产的产能效率。
上述实施例只为说明本发明的技术构思及特点，是一种优选的实施例，其目的在于熟悉此项技术的人士能够了解本发明的内容并据以实施，并不能以此限定本发明的保护范围。凡根据本发明的精神实质所作的等效变换或修饰，都应涵盖在本发明的保护范围之内。
Claims (8)
1.一种N型双面太阳能电池的制备方法，其特征在于，依次包括：
S1、对N型单晶硅片进行双面制绒；
S2、对步骤S1处理后的硅片的正面进行单面硼扩散；
S3、清洗去除步骤S2处理后的硅片表面的硼硅玻璃；
S4、在硅片的正面通过PECVD或ALD沉积氧化铝钝化层，在所述氧化铝钝化层上通过PECVD沉积氮化硅钝化减反射层；
S5、对硅片的背面进行磷扩散；
S6、清洗去除步骤S5处理后的硅片表面的磷硅玻璃；然后在硅片背面通过PECVD沉积氮化硅钝化减反射层；
S7、对硅片刻边以将硅片正面和背面隔离；
S8、在硅片的正面和背面分别印刷栅线电极，并烧结。
2.根据权利要求1所述的N型双面太阳能电池的制备方法，其特征在于，步骤S4中，所述氧化铝钝化层的厚度为5~30nm，所述氮化硅钝化减反射层的厚度为60~95nm。
3.根据权利要求1所述的N型双面太阳能电池的制备方法，其特征在于，步骤S6中，所述氮化硅钝化减反射层的厚度为60~95nm。
4.根据权利要求1所述的N型双面太阳能电池的制备方法，其特征在于，步骤S2中，将相邻两个硅片的背面相对放置并露出正面，采用液态BBr3扩散，扩散温度为900~970摄氏度，扩散时间为30~50min，方阻为55~75Ω/□。
5.根据权利要求1所述的N型双面太阳能电池的制备方法，其特征在于，步骤S2中，在硅片正面旋涂或印刷硼源进行高温扩散。
6.根据权利要求1所述的N型双面太阳能电池的制备方法，其特征在于，步骤S3中，采用质量浓度为5~15%的HF溶液去除硅片表面的硼硅玻璃。
7.根据权利要求1所述的N型双面太阳能电池的制备方法，其特征在于，步骤S4中，将相邻两个硅片的正面相对设置并露出背面，采用液态POCl3扩散，扩散温度为750~850℃，扩散时间为20~45min，方阻为30~50Ω/□。
8.根据权利要求1所述的N型双面太阳能电池的制备方法，其特征在于，步骤S6中，采用质量浓度为2~3%的HF溶液去除硅片表面的磷硅玻璃。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108550632A (zh) * | 2018-04-25 | 2018-09-18 | 协鑫集成科技股份有限公司 | N型双面电池的制备方法及电池 |
| CN110299434A (zh) * | 2019-07-17 | 2019-10-01 | 浙江晶科能源有限公司 | 一种n型双面电池的制作方法 |
| CN111477719A (zh) * | 2019-10-22 | 2020-07-31 | 国家电投集团西安太阳能电力有限公司 | 一种全绒面n型双面电池的制作方法 |
| CN112017984A (zh) * | 2020-08-19 | 2020-12-01 | 无锡尚德太阳能电力有限公司 | 一种测试背面钝化太阳能电池高温衰减的方法 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108550632A (zh) * | 2018-04-25 | 2018-09-18 | 协鑫集成科技股份有限公司 | N型双面电池的制备方法及电池 |
| CN110299434A (zh) * | 2019-07-17 | 2019-10-01 | 浙江晶科能源有限公司 | 一种n型双面电池的制作方法 |
| CN111477719A (zh) * | 2019-10-22 | 2020-07-31 | 国家电投集团西安太阳能电力有限公司 | 一种全绒面n型双面电池的制作方法 |
| CN112017984A (zh) * | 2020-08-19 | 2020-12-01 | 无锡尚德太阳能电力有限公司 | 一种测试背面钝化太阳能电池高温衰减的方法 |
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