CN106711265A - Photovoltaic tabbing ribbon - Google Patents
Photovoltaic tabbing ribbon Download PDFInfo
- Publication number
- CN106711265A CN106711265A CN201611173571.0A CN201611173571A CN106711265A CN 106711265 A CN106711265 A CN 106711265A CN 201611173571 A CN201611173571 A CN 201611173571A CN 106711265 A CN106711265 A CN 106711265A
- Authority
- CN
- China
- Prior art keywords
- photovoltaic
- interconnecting strip
- base band
- tabbing ribbon
- baseband
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 229910001074 Lay pewter Inorganic materials 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052709 silver Inorganic materials 0.000 abstract description 8
- 239000004332 silver Substances 0.000 abstract description 8
- 239000011247 coating layer Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 238000005406 washing Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000003223 protective agent Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
Abstract
The invention provides a photovoltaic tabbing ribbon which is low in resistivity and great in light reflecting effect. The photovoltaic tabbing ribbon comprises a baseband which is provided with a front surface used for receiving light and a back surface used for connecting a solar cell. The photovoltaic tabbing ribbon also comprises a silver coating layer which covers the front surface of the baseband and a tin coating layer which covers the back surface of the baseband. The front surface of the silver coating layer outwardly protrudes to form a curved surface in a way of opposing the baseband. The connecting line of the center of the circle of all the curved lines forming the curved surface extends along the length direction of the tabbing ribbon.
Description
Technical field
The present invention relates to photovoltaic field, more particularly to a kind of photovoltaic interconnecting strip.
Background technology
In the recent period with photovoltaic leader's implementing plan, photovoltaic industry circle and research institution are lifted to photovoltaic module power and increased again
Strong attention rate, wherein cell piece connecting material --- the improvement of interconnecting strip can more efficiently lifting assembly overall output work(
Rate.Gradually ripe efficiently component with industry certainly will turn into main flow in the industry.Component is that monolithic battery piece is connected with interconnecting strip
And then it is packaged into a generator unit.Traditional interconnecting strip mainly coats the structure of tin alloy layers using Copper base material, and coating material is led to
It is often Sn60%/Pb40%, Sn63%/Pb37%, coating layer thickness 0.02-0.04mm.Resistivity is up to（3.0uΩ.cm）, loss electricity
Energy.Interconnecting strip blocks cell piece light-receiving area when cell piece is connected, and smooth interconnecting strip surface is emitted onto interconnecting strip again
The light on surface is reflected back, so as to reduce the efficiency of light energy utilization again.
The content of the invention
Regarding to the issue above, it is an object of the invention to provide the photovoltaic interconnecting strip that a kind of resistivity is low and reflecting effect is good.
In order to solve the above technical problems, a kind of technical scheme for using of the present invention for：
A kind of photovoltaic interconnecting strip, including base band, the base band have for receiving the front of light and for connecting solar-electricity
The back side of pond piece, the photovoltaic interconnecting strip also including covering be arranged on the positive silvering of the base band, covering be arranged on it is described
The tin coating at the base band back side, the front of the silvering dorsad outwardly curved curved surface of the base band.
Preferably, the line for constituting the center of circle of each camber line of the arc-shaped curved surface prolongs along the length direction of the interconnecting strip
Stretch.
Preferably, the positive middle part of the silvering is outwardly.
Preferably, the tin coating is made up of leypewter.
It is highly preferred that by weight, stanniferous 60% leaded 40% in the leypewter.
The present invention uses above-mentioned technical proposal, has the following advantages that compared to existing technology：
The front of interconnecting strip is silver-plated, improves reflecting rate 30%, reduces body resistivity to 2.0u Ω .cm；Silver coating is using at arc
Reason, increases angle of reflection, improves illumination utilization rate.
Brief description of the drawings
Accompanying drawing 1 is the schematic diagram of photovoltaic welding belt of the invention.
In above-mentioned accompanying drawing：
1st, glass panel；2nd, silver coating；3rd, base band；4th, tin coating；5th, cell piece.
Specific embodiment
Presently preferred embodiments of the present invention is described in detail below in conjunction with the accompanying drawings, so that advantages and features of the invention energy
It is easier to be understood by the person skilled in the art.
Referring to the drawings shown in 1, a kind of photovoltaic interconnecting strip, it is encapsulated after, photovoltaic interconnecting strip is located at glass panel 1 and solar energy
Between cell piece 5.Photovoltaic interconnecting strip includes base band 3, and the base band 3 has for receiving the front of light and for connecting the sun
The back side of energy cell piece.The photovoltaic interconnecting strip is also arranged on the positive silvering 2 of the base band 3, covering and sets including covering
In the tin coating 4 at the back side of the base band 3.The front of the silvering 2 dorsad outwardly curved curved surface of the base band 3.Structure
Line into the center of circle of each camber line of the arc-shaped curved surface extends along the length direction of the interconnecting strip.The silvering 2
Positive middle part is outwardly, that is to say, that interconnecting strip is the low arch in middle part both sides high.The tin coating 4 is by leypewter
It is made, by weight, stanniferous 60% leaded 40% in the leypewter.
It is base material that the present invention uses red copper or fine copper, in welding non-solder face（That is front）It is silver-plated, high solar reflectivity is carried,
Interconnecting strip body resistivity is reduced simultaneously.With welding battery face（That is the back side）Plating Sn60%/Pb40% tin alloys, for battery sheet grating
Wire bonding.
It is silver-plated to mainly comprise the following steps：Acidity is deoiled, washing, chemical polishing, and distillation washing, activation, washing is pre- silver-plated, silver-plated,
Washing, is neutralized, washing, coats protective agent, and washing, hot pure water washing, centrifugation is dried.Ag is added and is typically taken Ag（CN）Form
Add, but appropriate NO3 -1, be conducive to improving the conductive capability of solution.It is silver-plated to be carried out at a temperature of 20 DEG C or so.Protected in silver plating liquid
A certain amount of free cyanide is held, makes bath stability, coating crystallization is careful, uniformly, improve solution conductivity ability and dispersibility,
Anode is promoted normally to dissolve.Add NFB.1/NFB.2 brighteners to expand current density during plated film, crystallize coating more careful,
Reflecting rate is more preferably.After coating terminates, diamond wire unhairing is used, camber silver layer surface of polishing.When glass, interconnecting strip and cell piece envelope
After dress, illumination is irradiated to arc silver layer surface, and light is reflected back glass surface, and glass is reflecting light to cell piece surface, so that will
Light makes full use of, and improves power output.
Above-mentioned interconnecting strip has the following advantages that：
Interconnecting strip front is silver-plated, improves reflecting rate 30%, reduces body resistivity to 2.0u Ω .cm；
Silver coating uses arc process, increases angle of reflection, improves illumination utilization rate；
Brightener enhancing coating surface crystallization is added during plated film, reflecting rate is further improved；
The light of interconnecting strip is emitted onto, by scattering, being reflected back cell piece, the luminous energy of cell piece absorption, corresponding work(can be lifted
Rate output will improve 1% or so.
The above embodiments merely illustrate the technical concept and features of the present invention, is a kind of preferred embodiment, and its purpose exists
In allowing person skilled in the art to will appreciate that present disclosure and implementing according to this, guarantor of the invention can not be limited with this
Shield scope.The equivalent change or modification that all Spirit Essences of the invention are made, should all cover in protection scope of the present invention
Within.
Claims (5)
1. a kind of photovoltaic interconnecting strip, including base band, the base band has for receiving the front of light and for connecting solar energy
The back side of cell piece, it is characterised in that：The photovoltaic interconnecting strip is also arranged on the positive silvering of the base band, covers including covering
Lid is arranged on the tin coating at the base band back side, the front of the silvering dorsad outwardly curved curved surface of the base band.
2. photovoltaic interconnecting strip according to claim 1, it is characterised in that：Constitute the circle of each camber line of the arc-shaped curved surface
The line of the heart extends along the length direction of the interconnecting strip.
3. photovoltaic interconnecting strip according to claim 1, it is characterised in that：The positive middle part convex of the silvering
Go out.
4. photovoltaic interconnecting strip according to claim 1, it is characterised in that：The tin coating is made up of leypewter.
5. photovoltaic interconnecting strip according to claim 4, it is characterised in that：By weight, stanniferous 60% in the leypewter
Leaded 40%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611173571.0A CN106711265B (en) | 2016-12-16 | 2016-12-16 | A kind of photovoltaic interconnecting strip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611173571.0A CN106711265B (en) | 2016-12-16 | 2016-12-16 | A kind of photovoltaic interconnecting strip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106711265A true CN106711265A (en) | 2017-05-24 |
| CN106711265B CN106711265B (en) | 2019-03-29 |
Family
ID=58939206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611173571.0A Active CN106711265B (en) | 2016-12-16 | 2016-12-16 | A kind of photovoltaic interconnecting strip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106711265B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107799615A (en) * | 2017-10-20 | 2018-03-13 | 杭州瞩日能源科技有限公司 | Solar cell blade unit, photovoltaic cell module and its preparation technology |
| CN108172639A (en) * | 2017-12-15 | 2018-06-15 | 中建材浚鑫科技有限公司 | Multiple-grid efficient photovoltaic module |
| CN115416510A (en) * | 2022-10-08 | 2022-12-02 | 湖南汽车工程职业学院 | Parking space wireless charging system based on light storage and charging and discharging integration |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203085561U (en) * | 2013-02-07 | 2013-07-24 | 凡登（常州）新型金属材料技术有限公司 | Solder strip for increasing power of photovoltaic battery assembly |
| CN203659898U (en) * | 2014-01-10 | 2014-06-18 | 常州天合光能有限公司 | Micro-condensation photovoltaic welding strip |
| CN204632766U (en) * | 2014-12-24 | 2015-09-09 | 无锡尚德太阳能电力有限公司 | Compound embossing photovoltaic welding belt |
| CN205542834U (en) * | 2016-02-23 | 2016-08-31 | 孙益民 | Structure photovoltaic solder strip |
-
2016
- 2016-12-16 CN CN201611173571.0A patent/CN106711265B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203085561U (en) * | 2013-02-07 | 2013-07-24 | 凡登（常州）新型金属材料技术有限公司 | Solder strip for increasing power of photovoltaic battery assembly |
| CN203659898U (en) * | 2014-01-10 | 2014-06-18 | 常州天合光能有限公司 | Micro-condensation photovoltaic welding strip |
| CN204632766U (en) * | 2014-12-24 | 2015-09-09 | 无锡尚德太阳能电力有限公司 | Compound embossing photovoltaic welding belt |
| CN205542834U (en) * | 2016-02-23 | 2016-08-31 | 孙益民 | Structure photovoltaic solder strip |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107799615A (en) * | 2017-10-20 | 2018-03-13 | 杭州瞩日能源科技有限公司 | Solar cell blade unit, photovoltaic cell module and its preparation technology |
| CN108172639A (en) * | 2017-12-15 | 2018-06-15 | 中建材浚鑫科技有限公司 | Multiple-grid efficient photovoltaic module |
| CN115416510A (en) * | 2022-10-08 | 2022-12-02 | 湖南汽车工程职业学院 | Parking space wireless charging system based on light storage and charging and discharging integration |
| CN115416510B (en) * | 2022-10-08 | 2024-04-09 | 湖南汽车工程职业学院 | Parking space wireless charging system based on light storage, charging and discharging integration |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106711265B (en) | 2019-03-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 215542 Jiangsu city of Suzhou province Changshou City Shajiabang Changkun Industrial Park Teng Hui Road No. 1 Applicant after: Suzhou Tenghui Photovoltaic Technology Co., Ltd. Address before: 215542 Jiangsu city of Suzhou province Changshou City Shajiabang Changkun Industrial Park Teng Hui Road No. 1 Applicant before: Zhongli Talesun Solar Technology Co., Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |