CN106711250A - AlGaNGaN neutron detector with varied doping and variable components - Google Patents
AlGaNGaN neutron detector with varied doping and variable components Download PDFInfo
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- 238000005516 engineering process Methods 0.000 claims abstract description 7
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- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
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- 239000004065 semiconductor Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention discloses an AlGaNGaN neutron detector with varied doping and variable components. The AlGaNGaN neutron detector is a PIN structure and takes a self-support n-type GaN as a substrate, and an n-type AlGaN layer with varied doping and variable components, an undoped GaN layer and a p-type GaN layer are grown in order on the substrate through adoption of the metallorganics chemical vapor deposition technology. The metal is subjected to deposition and annealing process in the p-type GaN and n-type substrates to form an Ohmic contact electrode. The 10BC4 or 6LiF are deposited on the p-type GaN layer to take as a neutron conversion layer. The AlGaN/GaN varied doping and variable component structure is internally provided with a built-in electric field, a nuclear reaction happens after the neutron is irradiated to the 10BC4 or 6LiF to generate [Alpha] particles, when the [Alpha] particles perform ionization of the AlGaN/GaN to generate electron-hole pairs, the electric yield drives electrons and electron holes to respectively perform directional movement to two ends of the n-type electrode and the p-type electrode to facilitate the improvement of the collection efficiency and reduction of the leak current so as to improve the sensitivity of the neutron detector and the detection efficiency.
Description
Technical field
Become component AlGaN/GaN neutron detections the present invention relates to nuclear radiation detection technical field, especially a kind of varying doping
Device.
Background technology
Neutron detector is the core component of neutron detection.Neutron detector based on semiconductor has low in energy consumption, linear
Response range is wide, the response time is fast, n/ γ good resolutions, small volume, the low advantage of operating voltage, is based particularly on broad-band gap half
The neutron detector of conductor material, can substitute in many application fields3He proportional counter tubes, BF3Proportional counter tube and scintillator
Detector.
GaN punctures as third generation semi-conducting material with broad-band gap, saturated electrons drift speed high, high heat conductance, height
The features such as electric field and good chemical stability.It is increasingly mature with GaN material, with high temperature resistant, radiotolerant GaN cores spoke
Penetrate the concern that detector receives people.In the last few years, in order to improve the detection performance of GaN nuclear radiation, existing researcher couple
This is studied, and prepares the GaN nuclear radiation detectors of various structures.2003, Vilnius university of Lithuania was prepared for base
In the nuclear radiation detector of SI GaN materials.2012, Dutch European Space research institute was prepared for the α particles and X- of PIN structural
Ray detectors.2012, Ohio State Univ-Columbus USA was visited using the α particles that Free-standing GaN material is prepared for Schottky junction structure
Device is surveyed, has been detected to be irradiated in thermal neutron and is scribbled Li2The α particles produced on the polytetrafluoroethylene (PTFE) of O, but above-mentioned detector is one
Determine all there is a problem of that leakage current is larger and carrier collection is less efficient in degree.In order to solve the above problems, can be in PIN
N areas in device architecture make active area thickness broadening and built in field increase, so as to improve using varying doping and change component structure
Carrier collection efficiency, reduces leakage current.Collection efficiency high becomes band gap AlGaN/GaN neutrons under this effect with built in field
Sensitive detection parts, have good application prospect in nuclear radiation detection field.
The content of the invention
It is above-mentioned to solve it is an object of the invention to provide the AlGaN/GaN neutron detectors that a kind of varying doping becomes component
Deficiency in background technology.
The technical scheme is that：A kind of varying doping becomes component AlGaN/GaN neutron detectors, and the detector is PIN
Structure, using self-supporting N-shaped GaN as substrate, is become on substrate using the order growth of metal-organic chemical vapor deposition equipment technology
Doping becomes N layers of component N-shaped AlGaN, I layers of undoped p GaN, P layers of p-type GaN；Using electron beam evaporation equipment in p-type GaN layer
Multiple layer metal is deposited respectively and is made annealing treatment and form p-type and N-shaped Ohm contact electrode respectively, with n-type substrate layer then using light
Carve and magnetron sputtering technique is sputtered on p-type electrode10BC4Form neutron conversion layer.
A kind of varying doping becomes component AlGaN/GaN neutron detectors, and its preparation process is as follows：
1）Choose self-supporting N-shaped GaN material and do substrate, it is desirable to which its dislocation density is less than 106cm-2, and uniformity is good, and crystal orientation is
Ga faces（1-110）, twin polishing, N-shaped doping concentration is 5~10 × 1018cm-3, thickness is 150~200 μm；
2）In step 1）In the N-shaped GaN substrate of middle acquisition, epitaxial growth Si doping N-shaped varying dopings become component AlGaN/GaN PIN
N layers in structure, N thickness degree is 4~8 μm, and during from substrate toward outgrowth, N-shaped doping concentration is by 1~10 × 1018cm-3By finger
Number is decremented to 5~10 × 1016cm-3, Al components are by 0.2~0.3 linear decrease to 0；
3）In step 2）Continue the GaN of the undoped p that epitaxial growth thickness is 1~3 μm on the N layers of middle acquisition as in PIN structural
I layers；
4）In step 3）Continuation epitaxial growth Mg doping thickness is the GaN of 100~500nm as PIN structural on the I layers of middle acquisition
In P layers, its doping concentration be 1~5 × 1019cm-3。
Described p-type Ohm contact electrode, in step 4）In the p-type GaN layer of middle acquisition, deposition Ni/Au connects as ohm
Metal is touched, the wherein thickness of Ni is 10~20nm, and the thickness of Au is 50~100nm, is then carried out at Ohm contact electrode annealing
Reason, annealing temperature is 450~550 DEG C, and annealing time is 600~900s.
Described N-shaped Ohm contact electrode, in n-type substrate, depositing Ti/Al/Ni/Au as metal ohmic contact, its
The thickness of middle Ti is 10~20nm, and the thickness of Al is 30~50nm, and the thickness of Ni is 20~40nm, the thickness of Au for 50~
100nm, then carries out Ohm contact electrode annealing, and annealing temperature is 550~650 DEG C, and annealing time is 400~600s.
Described neutron conversion layer, neutron transition material is10B4C or6LiF, thickness is 4~6 μm；Chamber during deposition conversion layer
The base vacuum of body is 1~5 × 10-5 Pa, operating pressure is 1~3Pa, and argon flow amount is 5~20sccm, and radio frequency source is 100
~300W, sputtering time is 2000~3000s, and backwash bias is 50~150V.
Mechanism for the present invention, feature and advantage:
The present invention is that a kind of varying doping becomes component AlGaN/GaN neutron detectors.Its feature is, the Al groups in AlGaN/GaN
It is that the change of component can cause the band gap that can be gradient to GaN from height with band gap, in material from 0.2 ~ 0.3 linear gradient to 0 to divide
Portion forms built in field；Meanwhile, the GaN interfaces of AlGaN/GaN and undoped p there is also a piezoelectric polarization electric field.Two kinds of electric fields
Direction is consistent, the electric field that alternative a part of applying bias are produced, that is, reduce the applying bias of detector.In AlGaN/GaN
When sub- detector works, when there is neutron exposure to device, in neutron conversion layer10B or6There is nuclear reaction with neutron in Li,
Discharge α particles.A part of α particles ionize the GaN layer of undoped p through I layers in PIN structural, produce electron hole pair；One
Through I layers in PIN structural, then off-energy moves forward part α particles, reaches varying doping and becomes component AlGaN N
Layer, ionization varying doping becomes N layers of component, produces electron hole pair.In the electricity that the built in field and applying bias of AlGaN/GaN are produced
Under field action, electronics is collected by n-type substrate, and hole is collected by p-type GaN, so that the charge collection efficiency of carrier is improved, while
Also improve the detection efficient of detector.
The advantage of the invention is that：1st, varying doping of the present invention becomes component AlGaN/GaN neutron detectors, with PIN structural,
The leakage current of device is reduced, detection efficient is improve.2nd, varying doping of the present invention becomes component AlGaN/GaN neutron detectors, by
In the increase of built in field, active area thickness is consequently increased, thus is very beneficial for the collection of carrier, so as to improve detection
The sensitivity of device and detection efficient.
Brief description of the drawings
Varying doping becomes component AlGaN/GaN neutron detector preparation process schematic diagram as shown in Figure 1, Figure 2, Figure 3, Figure 4；Its
In：
Fig. 1 is using the figure after metal organic chemical vapor deposition；
Fig. 2 is to prepare the figure after Ohmic contact；
Fig. 3 is to apply the figure after negative photoresist and exposure imaging；
Fig. 4 is to prepare10BC4Figure after neutron conversion layer.
In figure, 1, Ga faces（1-110）N-type substrate, 2, varying doping become N-GaN layers of component, 3, I layers, 4, P-GaN layers, 5,
Ni/Au Ohm contact electrodes, 6, Ti/Al/Ni/Au Ohm contact electrodes, 7, photoengraving pattern, 8,10BC4Neutron conversion layer.
Specific embodiment
In order to deepen the understanding of the present invention, below in conjunction with embodiment and accompanying drawing, the invention will be further described, should
Embodiment is only used for the explanation present invention, does not constitute the restriction to protection scope of the present invention.
Varying doping becomes component AlGaN/GaN neutron detector preparation methods and comprises the following steps that：
As shown in figure 1, first, choosing the base material of N-shaped GaN substrate 1, uniformity is good, and crystal orientation is Ga faces（1-110）, twin polishing, position
Dislocation density is less than 106cm-2, N-shaped doping concentration is (5~10) × 1018cm-3, thickness is 150 μm；Secondly, it is organic using metal
Thing chemical vapour deposition technique first epitaxial growth thickness on substrate is 6 μm, N-shaped doping concentration is from 5 × 1018cm-3Passed by index
Reduce to 5 × 1016cm-3, Al constituent contents from the AlGaN layer of 0.25 linear decline to 0 be N layers 2 in PIN structural；Then grow
Thickness is 1 μm of layer of undoped gan as I layers 3；Regrowth thickness is 100nm, doping concentration is 1 × 1019cm-3P-type GaN
Layer is used as P layers 4 in PIN structural.
As shown in Fig. 2 using electron beam evaporation equipment, Ni/Au is deposited on P layers 4 of above-mentioned acquisition as Ohmic contact
Metal, its thickness is respectively 20/50nm, is annealed under 500 DEG C of air atmospheres 900s using rapid thermal annealing, forms detector
Front Ni/Au Ohm contact electrode 5；Using electron beam evaporation equipment, depositing Ti/Al/Ni/Au is used as Europe in N-shaped GaN substrate
Nurse contacting metal, its thickness is respectively 20/50/20/50nm, is annealed under 550 DEG C of nitrogen atmospheres 600s using rapid thermal annealing,
Form detector back side Ti/Al/Ni/Au Ohm contact electrode 6.
As shown in figure 3, spin coating a layer thickness is 6 μm of negative photoresist on Ni/Au Ohm contact electrodes 5 using sol evenning machine
Layer, is then put on the hot plate that heating-up temperature is 90 DEG C and toasts 90s, litho machine position is removed and placed in after cooling, using chromium light
Mask exposure 4s is carved, the slice, thin piece after exposure is put on the hot plate that temperature is 110 DEG C and toasts 60s, be put into developer for negative photoresist development
25s, is dried up using deionized water rinsing and with nitrogen, places into and 120s is toasted on the hot plate that temperature is 120 DEG C, is formed neutron and is turned
Change the photoengraving pattern 7 of layer.
As shown in figure 4, deposit thickness is 4 μm on photoengraving pattern 7 using magnetron sputtering apparatus after above-mentioned exposure10B4C as detector neutron conversion layer 8.Magnetron sputtering cavity base vacuum is 1.0 × 10-5 Pa, operating pressure is
1Pa, argon flow amount is 10sccm, and radio frequency source is 200W, and sputtering time is 2500s, and backwash bias is 100V.Deposition neutron conversion
After layer 8, the AlGaN/GaN materials that photoresist is arranged at top are put into the stripper that removes photoresist, removal AlGaN/GaN film tops
Residual photoresist.
Finally, the front electrode and backplate of AlGaN/GaN detectors, front electricity are respectively coated with using conductive silver paste
Pole is Nian Jie with gold-plated aluminum shell, and backplate copper conductor is adhered on the bnc interface of gold-plated aluminum shell, is then put into temperature
Heated at constant temperature 30min in the heater box for 90 DEG C is spent, solidifies silver paste, complete the assembling of neutron detector.
General principle of the invention and principal character and advantages of the present invention has been shown and described above.The technology of the industry
Personnel it should be appreciated that the present invention is not limited to the above embodiments, simply explanation described in above-described embodiment and specification this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, these changes
Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appending claims and its
Equivalent thereof.
Claims (5)
1. a kind of varying doping becomes component AlGaN/GaN neutron detectors, it is characterised in that：The detector is PIN structural, to prop up certainly
N-shaped GaN is used as substrate for support, and component n is become using metal-organic chemical vapor deposition equipment technology order growth varying doping on substrate
N layers of type AlGaN, I layers of undoped p GaN, P layers of p-type GaN；Using electron beam evaporation equipment in p-type GaN layer and n-type substrate layer
Multiple layer metal is deposited respectively and is made annealing treatment and form p-type and N-shaped Ohm contact electrode respectively, then using photoetching and magnetron sputtering
Technology is sputtered on p-type electrode10BC4Form neutron conversion layer.
2. varying doping according to claim 1 becomes component AlGaN/GaN neutron detectors, and its preparation process is as follows：
1）Choose self-supporting N-shaped GaN material and do substrate, it is desirable to which its dislocation density is less than 106cm-2, and uniformity is good, and crystal orientation is
Ga faces（1-110）, twin polishing, N-shaped doping concentration is 5~10 × 1018cm-3, thickness is 150~200 μm；
2）In step 1）In the N-shaped GaN substrate of middle acquisition, epitaxial growth Si doping N-shaped varying dopings become component AlGaN/GaN PIN
N layers in structure, N thickness degree is 4~8 μm, and during from substrate toward outgrowth, N-shaped doping concentration is by 1~10 × 1018cm-3By finger
Number is decremented to 5~10 × 1016cm-3, Al components are by 0.2~0.3 linear decrease to 0；
3）In step 2）Continue the GaN of the undoped p that epitaxial growth thickness is 1~3 μm on the N layers of middle acquisition as in PIN structural
I layers；
4）In step 3）Continuation epitaxial growth Mg doping thickness is the GaN of 100~500nm as PIN structural on the I layers of middle acquisition
In P layers, its doping concentration be 1~5 × 1019cm-3。
3. component AlGaN/GaN neutron detectors are become according to claim 1 varying doping, it is characterised in that：Described p-type ohm connects
Touched electrode, in step 4）In the p-type GaN layer of middle acquisition, deposition Ni/Au is 10 as metal ohmic contact, the wherein thickness of Ni
The thickness of~20nm, Au is 50~100nm, then carries out Ohm contact electrode annealing, and annealing temperature is 450~550 DEG C,
Annealing time is 600~900s.
4. component AlGaN/GaN neutron detectors are become according to claim 1 varying doping, it is characterised in that：Described N-shaped ohm connects
Touched electrode, in n-type substrate, depositing Ti/Al/Ni/Au is 10~20nm, Al as metal ohmic contact, the wherein thickness of Ti
Thickness be 30~50nm, the thickness of Ni is 20~40nm, and the thickness of Au is 50~100nm, then carries out Ohm contact electrode
Annealing, annealing temperature is 550~650 DEG C, and annealing time is 400~600s.
5. component AlGaN/GaN neutron detectors are become according to claim 1 varying doping, it is characterised in that：Described neutron conversion
Layer, neutron transition material is10B4C or6LiF, thickness is 4~6 μm；The base vacuum of cavity is 1~5 × 10 during deposition conversion layer-5 Pa, operating pressure is 1~3Pa, and argon flow amount is 5~20sccm, and radio frequency source is 100~300W, and sputtering time is 2000
~3000s, backwash bias is 50~150V.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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