CN106711075B - Wafer level chip packaging para-position XY theta nano compensation device - Google Patents
Wafer level chip packaging para-position XY theta nano compensation device Download PDFInfo
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- CN106711075B CN106711075B CN201710178615.7A CN201710178615A CN106711075B CN 106711075 B CN106711075 B CN 106711075B CN 201710178615 A CN201710178615 A CN 201710178615A CN 106711075 B CN106711075 B CN 106711075B
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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Abstract
The embodiment of the invention discloses a wafer-level chip packaging para-position XY theta nanometer compensation device, which is used for solving the technical problems that the existing XY theta three-degree-of-freedom displacement compensation device is small in stroke caused by adopting a 3RRR parallel device, small in working range, complex in control and more in calculation and analysis. The embodiment of the invention comprises the following steps: the device comprises an output platform, an eighth flexible hinge, a decoupling mechanism, a displacement mechanism, an input platform and piezoelectric ceramics; the decoupling mechanism is sequentially connected with a displacement mechanism, an input platform and piezoelectric ceramics in four directions of a positive X axis and a negative Y axis which are centered by the decoupling mechanism; the decoupling mechanism is connected with the output platform through an eighth flexible hinge in the directions of an X axis and a Y axis; the eighth flexible hinge is a straight round hinge.
Description
Technical Field
The invention relates to the technical field of wafer-level chip packaging, in particular to a wafer-level chip packaging para-position XY theta nanometer compensation device.
Background
Chip packaging requires high precision and multiple degrees of freedom to work cooperatively, especially with the great demand for the degree of freedom of angular θ. In the micro-nano processing category, in order to obtain high precision, a motion positioning device which uses piezoelectric ceramics as a driver and a flexible mechanism as a frame is often used, but the motion positioning device has high use precision, but has smaller stroke and can not meet the use under a large stroke, so that a macro-micro composite positioning strategy which uses the flexible mechanism as a displacement compensation device is adopted. The design of the compensation device is critical.
As shown in fig. 1 and 2, the conventional XY θ three-degree-of-freedom displacement compensation device mostly adopts a 3RRR parallel device. The parallel structure makes three degrees of freedom control relatively difficult and the stroke is insufficient. The method comprises the following steps: a) The stroke is small, and the working range is small; b) The control is complex, and more calculation and analysis are needed.
Disclosure of Invention
The embodiment of the invention provides a wafer-level chip packaging para-position XY theta nanometer compensation device, which solves the technical problems of small stroke, small working range, complex control and more calculation and analysis requirements caused by the fact that the existing XY theta three-degree-of-freedom displacement compensation device adopts a 3RRR parallel device.
The wafer-level chip package alignment XY theta nanometer compensation device provided by the embodiment of the invention comprises:
the device comprises an output platform, an eighth flexible hinge, a decoupling mechanism, a displacement mechanism, an input platform and piezoelectric ceramics;
the decoupling mechanism is sequentially connected with a displacement mechanism, an input platform and piezoelectric ceramics in four directions of a positive X axis and a negative Y axis which are centered by the decoupling mechanism;
the decoupling mechanism is connected with the output platform through an eighth flexible hinge in the directions of an X axis and a Y axis;
the eighth flexible hinge is a straight round hinge.
Optionally, the displacement mechanism comprises: the device comprises a first hinge mechanism, an amplified output platform and a second hinge mechanism;
the input platform is sequentially connected with the first hinge mechanism, the amplifying output platform, the second hinge mechanism and the decoupling mechanism.
Optionally, the first hinge mechanism comprises a lever, a flexible hinge.
Optionally, the lever comprises a first lever and a second lever.
Optionally, the flexible hinges include a first flexible hinge, a second flexible hinge, a third flexible hinge, a fourth flexible hinge.
Optionally, one end of the first flexible hinge is connected with the input platform, and the other end of the first flexible hinge is connected with the first lever;
one end of the first lever is also connected with a second flexible hinge, and the other end of the first lever is also connected with a third flexible hinge, a second lever and a fourth flexible hinge in sequence.
Optionally, the other end of the fourth flexible hinge is connected to the amplified output platform.
Optionally, the first flexible hinge is an arc-shaped hinge, the second flexible hinge is an arc-shaped hinge, the third flexible hinge is a straight round hinge, and the fourth flexible hinge is a straight round hinge.
Optionally, the second hinge mechanism includes a fifth flexible hinge and a sixth flexible hinge, and the amplifying output platform is sequentially connected with the fifth flexible hinge and the sixth flexible hinge.
Optionally, the fifth flexible hinge is a straight beam hinge, and the sixth flexible hinge is an arc hinge.
From the above technical solutions, the embodiment of the present invention has the following advantages:
the embodiment of the invention provides a wafer-level chip packaging para-position XY theta nanometer compensation device, which comprises: the device comprises an output platform, an eighth flexible hinge, a decoupling mechanism, a displacement mechanism, an input platform and piezoelectric ceramics; the decoupling mechanism is sequentially connected with a displacement mechanism, an input platform and piezoelectric ceramics in four directions of a positive X axis and a negative Y axis which are centered by the decoupling mechanism; the decoupling mechanism is connected with the output platform through an eighth flexible hinge in the directions of an X axis and a Y axis; the eighth flexible hinge is a straight round hinge, the output platform is connected with the decoupling mechanism in the X-axis direction and the Y-axis direction through the straight round eighth flexible hinge, the decoupling mechanism is sequentially connected with the displacement mechanism, the input platform and the piezoelectric ceramics in the positive and negative X-axis direction and the positive and negative Y-axis direction which are centered by the decoupling mechanism, the piezoelectric ceramics are electrified and elongated, and the input platform is driven to move, and then the displacement mechanism is driven to carry out displacement amplification, so that the compensation device fully utilizes the deformation of the flexible hinge, decoupling in the XY direction and the XY theta direction is realized, the three degrees of freedom are not influenced, the technical problems that the conventional XY theta three-degree-of-freedom displacement compensation device is small in stroke caused by adopting a 3RRR parallel device, the working range is small, the control is complex, and more calculation and analysis are needed are solved.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained from these drawings without inventive faculty for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a parallel device in the prior art according to an embodiment of the present invention;
fig. 2 is a schematic structural analysis diagram of a parallel device in the prior art according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a wafer level chip package alignment XY θ nano compensation device according to an embodiment of the present invention;
fig. 4 is a schematic diagram of an assembly structure of a wafer level chip package alignment xyθ nano compensation device according to an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating a motion simulation of a wafer level chip package alignment XY θ nano compensation device in an X-axis direction according to an embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating a motion simulation of a wafer level chip package alignment XY θ nano compensation device in a Y-axis direction according to an embodiment of the present invention;
fig. 7 is a schematic diagram of motion simulation of a wafer level chip package alignment xyθ nano compensation device in a θ direction according to an embodiment of the present invention.
The illustration is 1 first lever, 2 second flexible hinge, 3 first flexible hinge, 4 input platform, 5 amplified output platform, 6 fourth flexible hinge, 7 second lever, 8 third flexible hinge, 9 fifth flexible hinge, 10 sixth flexible hinge, 11 eighth flexible hinge, 12 seventh flexible hinge, 13 decoupling mechanism, 14 output platform.
Detailed Description
The embodiment of the invention provides a wafer-level chip packaging para-position XY theta nanometer compensation device, which is used for solving the technical problems of small stroke, small working range, complex control and more calculation and analysis requirements caused by the fact that the existing XY theta three-degree-of-freedom displacement compensation device adopts a 3RRR parallel device.
In order to make the objects, features and advantages of the present invention more comprehensible, the technical solutions in the embodiments of the present invention are described in detail below with reference to the accompanying drawings, and it is apparent that the embodiments described below are only some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 3 and 4, a wafer level chip package alignment xyθ nano compensation device provided in an embodiment of the invention includes:
an output platform 14, an eighth flexible hinge 11, a decoupling mechanism 13, a displacement mechanism, an input platform 4 and piezoelectric ceramics;
the decoupling mechanism 13 is sequentially connected with a displacement mechanism, an input platform 4 and piezoelectric ceramics in four directions of a positive X axis and a negative Y axis which are centered on the decoupling mechanism 13;
the decoupling mechanism 13 is connected with the output platform 14 through an eighth flexible hinge 11 in the X-axis and Y-axis directions;
the eighth flexible hinge 11 is a straight round hinge.
It should be noted that, the decoupling mechanism 13 further includes a seventh flexible hinge 12, the decoupling mechanism 13 may be divided into a left decoupling portion and a right decoupling portion, and the decoupling mechanisms 13 of the left and right portions are connected by the seventh flexible hinge 12, where the seventh flexible hinge 12 is an arc hinge.
Further, the displacement mechanism includes: a first hinge mechanism, an amplified output platform 5, a second hinge mechanism;
the input platform 4 is sequentially connected with the first hinge mechanism, the amplifying output platform 5, the second hinge mechanism and the decoupling mechanism 13.
Further, the first hinge mechanism includes a lever, a flexible hinge.
Further, the lever comprises a first lever 1 and a second lever 7.
Further, the flexible hinges include a first flexible hinge 3, a second flexible hinge 2, a third flexible hinge 8, and a fourth flexible hinge 6.
Further, one end of the first flexible hinge 3 is connected with the input platform 4, and the other end of the first flexible hinge 3 is connected with the first lever 1;
one end of the first lever 1 is also connected with a second flexible hinge 2, and the other end of the first lever 1 is also connected with a third flexible hinge 8, a second lever 7 and a fourth flexible hinge 6 in sequence.
Further, the other end of the fourth flexible hinge 6 is connected to the amplification output stage 5.
Further, the first flexible hinge 3 is an arc-shaped hinge, the second flexible hinge 2 is an arc-shaped hinge, the third flexible hinge 8 is a straight round hinge, and the fourth flexible hinge 6 is a straight round hinge.
Further, the second hinge mechanism includes a fifth flexible hinge 9 and a sixth flexible hinge 10, and the amplifying output platform 5 is sequentially connected to the fifth flexible hinge 9 and the sixth flexible hinge 10.
Further, the fifth flexible hinge 9 is a straight beam type hinge, and the sixth flexible hinge 10 is an arc type hinge.
For easy understanding, the working principle of the wafer-level chip package alignment xyθ nano compensation device provided by the embodiment of the invention will be described in detail.
Firstly, analyzing the working principle:
the piezoelectric ceramic is connected with a power supply, the piezoelectric ceramic stretches under the action of the power supply to drive the input platform 4 to move, the first lever 1 is pulled by the first flexible hinge 3 to input corresponding initial displacement at the input end of the lever, and lever displacement amplification is performed under the action of the second flexible hinge 2, the second lever 7 obtains an input displacement due to the connection of the second lever 7 and the third hinge 8, the final output displacement under the action of the second hinge 2 drives the third hinge 8 to move, the output platform 5 is finally amplified to obtain a larger displacement output through the transmission of the displacement and the deformation of the fourth hinge 6, and the fifth hinge 9 and the sixth hinge 10 are used for enabling the decoupling mechanism 13 to obtain a displacement under the action of the amplified output platform 5 and finally outputting a larger displacement output on the output platform 14 through the deformation of the eighth hinge 11.
It should be noted that, the motion precision of the arc flexible hinge is higher, but the rotation range is relatively smaller; the straight beam type flexible hinge has a larger rotation range, but the motion precision is poor; the straight-round flexible hinge is characterized by stable force transmission and accurate output. Therefore, when the multistage displacement amplifier is designed, a straight beam type flexible hinge is selected at a place needing a larger rotation range, an arc type flexible hinge is selected at a place needing higher motion precision, and a straight round type flexible hinge is selected at a place needing both motion precision and force transmission precision.
Specific movement pattern analysis:
when the displacement in the X direction is required to be output, the piezoelectric ceramic 1 or the piezoelectric ceramic 2 is powered on, the piezoelectric ceramic 1 or the piezoelectric ceramic 2 stretches under the action of the power supply and drives the input platform 4 to move, and the displacement in the X direction is finally output on the output platform 14 through the displacement mechanism in the X direction for amplification.
When a displacement in the Y direction is required to be output, the piezoelectric ceramic 3 or 4 is powered on, and the principle is the same as above, and finally a displacement in the Y direction is output on the output platform 14.
When a displacement in the theta direction is required to be output, the piezoelectric ceramic 1, the piezoelectric ceramic 2, the piezoelectric ceramic 3 and the piezoelectric ceramic 4 are powered on simultaneously, and finally, the displacement mechanism is used for simultaneously generating the mutual-action displacement in the X direction and the Y direction on the output platform 14, so that the output platform 14 rotates, and displacement input in the theta direction is realized.
And the whole mechanism fully utilizes the deformation of the fifth flexible hinge 9, the sixth flexible hinge 10, the eighth flexible hinge 11 and the seventh flexible hinge 12, so that the whole mechanism can realize decoupling in the XY direction and in the XY theta direction, and the three degrees of freedom are not mutually influenced.
Please refer to fig. 5-7, which are simulation graphs of motion analysis in the directions X, Y, θ by ANSYS, respectively.
It will be clear to those skilled in the art that, for convenience and brevity of description, specific working procedures of the above-described systems, apparatuses and units may refer to corresponding procedures in the foregoing method embodiments, which are not repeated herein.
The above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. The wafer level chip package alignment XY theta nanometer compensation device is characterized by comprising:
the device comprises an output platform, an eighth flexible hinge, a decoupling mechanism, a displacement mechanism, an input platform and piezoelectric ceramics;
the decoupling mechanism is sequentially connected with a displacement mechanism, an input platform and piezoelectric ceramics in four directions of a positive X axis and a negative Y axis which are centered by the decoupling mechanism;
the decoupling mechanism is connected with the output platform through the eighth flexible hinge in the directions of an X axis and a Y axis;
the decoupling mechanism further comprises a seventh flexible hinge;
the decoupling mechanism is divided into a left decoupling part and a right decoupling part, and the decoupling mechanisms of the left part and the right part are connected through the seventh flexible hinge;
the eighth flexible hinge is a straight round hinge;
the piezoelectric ceramics specifically comprise a first piezoelectric ceramic, a second piezoelectric ceramic, a third piezoelectric ceramic and a fourth piezoelectric ceramic;
when displacement in the theta direction is required to be output, the power supplies of the first piezoelectric ceramic, the second piezoelectric ceramic, the third piezoelectric ceramic and the fourth piezoelectric ceramic are simultaneously connected, and the displacement mechanism is used for simultaneously generating the mutual-action displacement in the X direction and the Y direction on the output platform, so that the output platform rotates, and displacement input in the theta direction is realized.
2. The wafer level chip package alignment xyθ nano-compensation device of claim 1, wherein the displacement mechanism comprises: the device comprises a first hinge mechanism, an amplified output platform and a second hinge mechanism;
the input platform is sequentially connected with the first hinge mechanism, the amplifying output platform, the second hinge mechanism and the decoupling mechanism.
3. The wafer level chip package alignment xyθ nano-compensation device of claim 2, wherein the first hinge mechanism comprises a lever, a flexible hinge.
4. The wafer level chip package alignment xyθ nano-compensation device of claim 3, wherein the lever comprises a first lever and a second lever.
5. The wafer level chip package alignment xyθ nano-compensation device of claim 4, wherein the flexible hinge comprises a first flexible hinge, a second flexible hinge, a third flexible hinge, and a fourth flexible hinge.
6. The wafer level chip package alignment xyθ nano compensation device of claim 5, wherein one end of the first flexible hinge is connected to the input platform and the other end of the first flexible hinge is connected to the first lever;
one end of the first lever is also connected with a second flexible hinge, and the other end of the first lever is also connected with a third flexible hinge, the second lever and the fourth flexible hinge in sequence.
7. The wafer level chip package alignment xyθ nano compensation device of claim 6, wherein the other end of the fourth flexible hinge is connected to the amplified output platform.
8. The wafer level chip package alignment xyθ nano-compensation device of claim 7, wherein the first flexible hinge is a circular arc hinge, the second flexible hinge is a circular arc hinge, the third flexible hinge is a straight circular hinge, and the fourth flexible hinge is a straight circular hinge.
9. The wafer level chip package alignment xyθ nano compensation device of claim 2, wherein the second hinge mechanism comprises a fifth flexible hinge and a sixth flexible hinge, and the amplified output platform is sequentially connected with the fifth flexible hinge and the sixth flexible hinge.
10. The wafer level chip package alignment xyθ nano-compensation device of claim 9, wherein the fifth flexible hinge is a straight beam hinge and the sixth flexible hinge is a circular arc hinge.
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| CN201710178615.7A CN106711075B (en) | 2017-03-23 | 2017-03-23 | Wafer level chip packaging para-position XY theta nano compensation device |
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| CN201710178615.7A CN106711075B (en) | 2017-03-23 | 2017-03-23 | Wafer level chip packaging para-position XY theta nano compensation device |
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