CN1067037A - High-k, high stable, low-loss ceramic medium material and manufacture method - Google Patents
High-k, high stable, low-loss ceramic medium material and manufacture method Download PDFInfo
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- CN1067037A CN1067037A CN 92108411 CN92108411A CN1067037A CN 1067037 A CN1067037 A CN 1067037A CN 92108411 CN92108411 CN 92108411 CN 92108411 A CN92108411 A CN 92108411A CN 1067037 A CN1067037 A CN 1067037A
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- fluxing
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Abstract
A kind of ceramic medium material is by with (35～45) % weight TiO
2, (30～46%) % weight Nd
2O
3, (16～25) % weight BaO, (5～14) % weight Bi
2O
3Form basic ingredient; With (45～60) % weight Pb
3O
4, (15～32) % weight Bi
2O
3, (6～12) % weight H
3BO
3, (3～9) % weight SiO
2, (2～6) % weight ZnO, (1.5～4) % weight Al
2O
3Form the glass ingredient of fluxing, and with 1120 ℃～1130 ℃ intermediate sintering temperature obtain the temperature varying coefficient Tcc of DIELECTRIC CONSTANT＜130, electric capacity or specific inductivity＜± premium properties of 30ppm/ ℃, loss factor DF＜0.05%.Be applied to electronic applications, can be suitable for the high frequency field especially and use.
Description
The present invention relates to the prescription of ceramic medium material and the improvement of manufacture method thereof, particularly about obtaining to have concurrently the ceramic medium material and the manufacture method thereof of high-k (high ε), smooth temperature profile (electrical capacity and dielectric constant with temperature change little, and promptly temperature factor Tcc is low) and low-loss (loss factor DF is low) with intermediate sintering temperature.
General to dielectric material used on the high frequency capacitor, require good temperature profile and low loss performance, for example require in the COG international standard of laminated ceramic capacitor specific inductivity or electrical capacity be not more than in the variation (Tcc) of-55 ℃～-125 ℃ (they are benchmark with 20 ℃) ± 30ppm/ ℃, loss factor (DF) be less than 0.1%.On the other hand, be generally the ceramic medium material that obtains high-k, majority is that the constituent material is placed sintering under the high temperature, obtains high-k with the particle structure that obtains fine compactness.But when ceramic medium material was applied to making electrical condenser, the fusing point of inevitable requirement electrode materials will surpass the sintering temperature of ceramic medium material, promptly need use the high temperature resistant electrode materials of being made up of precious metal materials such as platinum, palladiums, and cost is more expensive.For reducing cost, but the ceramic medium material of some low temperature sinterings has appearred.But with existing low temperature sintering fabrication techniques ceramic medium material, guarantee good Tcc and DF, be difficult to improve ε.Yet concerning dielectric material, specific inductivity is very important performance index, its range of application of direct relation.For example if the ε value is low, when making the large vol laminated ceramic capacitor with it, certainly will increase the lamination number, this not only influences qualification rate, reliability and palladium-silver electrode paste consumption, and cost rises thereupon increasing, and electrical condenser thickness increases and can influence miniaturization, and range of application is restricted.For this reason, many producers endeavour to study the ceramic medium material of high ε, low Tcc, low DF.For example 1988 disclosed Chinese invention patent application on November 23, (CN88102245A) proposed a kind ofly can be lower than the ceramic composition of 1140 ℃ of temperature agglomerating ε＞100, DF＜0.1% and Tcc＜150ppm/ ℃, the proposition that also has TiO
2-Nd
2O
3-BaO-Bi
2O
3It is the composition proposal of dielectric material, for example a day disclosure is speciallyyed permit clear 62-56361, clear 61-261263 etc., though these schemes have all been improved performance, satisfy simultaneously Tcc＜± the intermediate sintering temperature ceramic medium material of 30ppm/ ℃, DF＜0.1%, all never have ε to surpass 120.
The objective of the invention is at the problems referred to above, provide a kind of and can be lower than 1130 ℃ of temperature agglomerating, have high-k, smooth temperature profile and low-loss ceramic medium material and manufacture method thereof concurrently.
The present invention is achieved in that the composition that makes ceramic medium material mainly is made of the basic ingredient and the glass ingredient of fluxing, and wherein, basic ingredient accounts for 84～95% weight, the glass ingredient of fluxing accounts for 5～16%.Above-mentioned basic ingredient component relationship is:
The above-mentioned glass ingredient component relationship of fluxing is:
The method of making above-mentioned ceramic medium material is that earlier with basic constituent wet mixing, dry back pre-burning is incubated 2 hours down at 1100 ℃; On the other hand, the glass component of will fluxing is done and is mixed the back at about 950 ℃ of following fusion cast glass, molten back chilling, and through ball milling, obtaining particle diameter is the following slurries of 1.5 μ, dry for standby.In the ratio batching of the basic ingredient and the glass ingredient of fluxing, go out to meet the ceramic medium material of the object of the invention then at 1120 ℃～1130 ℃ of roasting temperatures.
Utilize batching of the present invention to form and manufacture method, can be lower than 1130 ℃ of following sintering go out ε＞130, Tcc＜± ceramic medium material of 30ppm/ ℃, DF＜0.05%, therefore high frequency ceramic medium material as compared with the past, performance improves greatly.When realizing that high ε can make it be applied to make laminated ceramic capacitor, reduce the lamination number, the qualification rate, reliability and the miniaturization that save electrode slurry, improve electric capacity.And, these performances obtain being lower than under 1130 ℃ of sintering temperatures, so when making medium making electrical condenser with it, can adopt fusing point be lower than 1160 ℃, the composition ratio is the electrode size of 30% palladium (weight)/70% silver medal (weight), than using the electrode slurry of precious metal composition at high proportion in the past, cost significantly reduces.
Be described in further detail the present invention by the following examples.
This example is a ceramic medium material compound method of the present invention.At first, basic ingredient is pressed table 1 batch weighing.
Table 1
| N O. | BaCO 3 | Nd 2O 3 | TiO 2 | Bi 2O 3 |
| 1 | 20.76 | 35.43 | 37.36 | 6.45 |
| 2 | 22.12 | 33.77 | 36.87 | 7.24 |
| 3 | 19.13 | 37.12 | 38.37 | 5.38 |
Pour into then wet mixing in the plastics ball grinder (material: zirconia ball: water=1: 2: 1.5), ball milling 24 hours, dry back pre-burning 1100 ℃ of insulations 2 hours down, is pulverized standby then.
On the other hand, flux glass ingredient by following batch weighing.
Pb
3O
4Bi
2O
3SiO ZnO H
3BO
3Al
2O
358 22.97 5 3.21 8.45 2.37
Pour into after do mixing in the aluminum oxide pincers pot,, again glass poured in the distilled water behind the chilling at about 950 ℃ of following fusion cast glass, ball milling with cross that to sift out particle diameter be the following slurries of 1.5 μ, dry for standby.
In this example, in basic ingredient: behind the ratio batch weighing of the glass ingredient of fluxing=89.5: 10.5, poured aluminum oxide ball milling in-tank mixing into 24 hours, go out required dielectric material at 1120 ℃～1130 ℃ roasting temperatures again.The electrical property of the laminated ceramic capacitor made from this routine dielectric material, as shown in table 2.
Table 2
Claims (2)
1, a kind of ceramic medium material is with TiO
2-Nd
2O
3-BaO-Bi
2O
3Be basic ingredient, it is characterized in that: basic ingredient accounts for 84～95% weight, the glass ingredient of fluxing accounts for 5～16% weight, and above-mentioned basic ingredient component relationship is:
The above-mentioned glass ingredient component relationship of fluxing is:
2, a kind of method of making the described ceramic medium material of claim 1 is characterized in that: earlier with basic constituent wet mixing, dry back pre-burning is incubated 2 hours down at 1100 ℃; On the other hand, the glass component of will fluxing do to mix the back at about 950 ℃ of following fusion cast glass, molten back chilling, and obtaining particle diameter through ball milling is slurry below 1.5 μ, dry for standby; In the ratio batching of the basic ingredient and the glass ingredient of fluxing, go out ceramic medium material then at 1120 ℃～1130 ℃ roasting temperatures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92108411 CN1067037A (en) | 1992-05-11 | 1992-05-11 | High-k, high stable, low-loss ceramic medium material and manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92108411 CN1067037A (en) | 1992-05-11 | 1992-05-11 | High-k, high stable, low-loss ceramic medium material and manufacture method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1067037A true CN1067037A (en) | 1992-12-16 |
Family
ID=4943520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 92108411 Pending CN1067037A (en) | 1992-05-11 | 1992-05-11 | High-k, high stable, low-loss ceramic medium material and manufacture method |
Country Status (1)
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| CN (1) | CN1067037A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1053519C (en) * | 1996-12-23 | 2000-06-14 | 广东肇庆风华电子工程开发有限公司 | High frequency high stablility sheet multilayer ceramic capacitor porcelain |
| CN1053517C (en) * | 1996-12-24 | 2000-06-14 | 广东肇庆风华电子工程开发有限公司 | Porcelain for high performance multi-layer disc ceramic capacitor sintered at moderate temperature |
| CN1063733C (en) * | 1998-04-19 | 2001-03-28 | 浙江大学 | Microwave dielectric ceramic with high dielectric constant and its preparation |
| CN1065844C (en) * | 1996-03-26 | 2001-05-16 | 株式会社村田制作所 | Dielectric ceramics composition |
| CN1067360C (en) * | 1997-09-12 | 2001-06-20 | 浙江大学 | High-dielectric constant microwave-medium ceramics |
| CN1072628C (en) * | 1997-12-05 | 2001-10-10 | 中国科学院上海硅酸盐研究所 | Dielectric ceramic component for high frequency and preparing technology |
| CN1309682C (en) * | 2000-07-28 | 2007-04-11 | Tdk株式会社 | Piezoelectric ceramics |
| CN100372802C (en) * | 2003-12-30 | 2008-03-05 | 广东风华高新科技股份有限公司 | High frequency thermostable titanium barium neodymium base ceramic medium materials and multilayer sheet type ceramic capacitor |
| CN102010198A (en) * | 2010-11-10 | 2011-04-13 | 厦门松元电子有限公司 | Ceramic capacitor dielectric material |
| CN102863220A (en) * | 2012-09-18 | 2013-01-09 | 天津大学 | Method for preparing PZT-based piezoelectric ceramic thick film material of silver electrode through low-temperature cofiring |
-
1992
- 1992-05-11 CN CN 92108411 patent/CN1067037A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1065844C (en) * | 1996-03-26 | 2001-05-16 | 株式会社村田制作所 | Dielectric ceramics composition |
| CN1053519C (en) * | 1996-12-23 | 2000-06-14 | 广东肇庆风华电子工程开发有限公司 | High frequency high stablility sheet multilayer ceramic capacitor porcelain |
| CN1053517C (en) * | 1996-12-24 | 2000-06-14 | 广东肇庆风华电子工程开发有限公司 | Porcelain for high performance multi-layer disc ceramic capacitor sintered at moderate temperature |
| CN1067360C (en) * | 1997-09-12 | 2001-06-20 | 浙江大学 | High-dielectric constant microwave-medium ceramics |
| CN1072628C (en) * | 1997-12-05 | 2001-10-10 | 中国科学院上海硅酸盐研究所 | Dielectric ceramic component for high frequency and preparing technology |
| CN1063733C (en) * | 1998-04-19 | 2001-03-28 | 浙江大学 | Microwave dielectric ceramic with high dielectric constant and its preparation |
| CN1309682C (en) * | 2000-07-28 | 2007-04-11 | Tdk株式会社 | Piezoelectric ceramics |
| CN100372802C (en) * | 2003-12-30 | 2008-03-05 | 广东风华高新科技股份有限公司 | High frequency thermostable titanium barium neodymium base ceramic medium materials and multilayer sheet type ceramic capacitor |
| CN102010198A (en) * | 2010-11-10 | 2011-04-13 | 厦门松元电子有限公司 | Ceramic capacitor dielectric material |
| CN102863220A (en) * | 2012-09-18 | 2013-01-09 | 天津大学 | Method for preparing PZT-based piezoelectric ceramic thick film material of silver electrode through low-temperature cofiring |
| CN102863220B (en) * | 2012-09-18 | 2014-02-19 | 天津大学 | Method for preparing PZT-based piezoelectric ceramic thick film material of silver electrode through low-temperature cofiring |
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