CN106684259B - OLED encapsulation method and OLED encapsulating structures - Google Patents
OLED encapsulation method and OLED encapsulating structures Download PDFInfo
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- CN106684259B CN106684259B CN201710036058.5A CN201710036058A CN106684259B CN 106684259 B CN106684259 B CN 106684259B CN 201710036058 A CN201710036058 A CN 201710036058A CN 106684259 B CN106684259 B CN 106684259B
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- 238000000034 method Methods 0.000 title claims abstract description 32
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- 239000012044 organic layer Substances 0.000 claims abstract description 119
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- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000005266 casting Methods 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
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- 150000004767 nitrides Chemical class 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
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- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
A kind of OLED encapsulation method of present invention offer and OLED encapsulating structures.The OLED encapsulation method of the present invention, combine frame glue encapsulation technology and thin film encapsulation technology, cofferdam is carried out to organic layer by using frame glue, the size of organic layer can be limited, ensure that each layer of organic layer is completely covered by the inorganic layer above it, improve packaging effect, simultaneously, multiple inorganic layers may be used a set of mask plate and be prepared, and reduce the usage quantity of mask plate, save production cost.The OLED encapsulating structures of the present invention, combine frame glue encapsulating structure and thin-film packing structure, cofferdam is carried out to organic layer by using frame glue, the size of organic layer can be limited, ensure that each layer of organic layer is completely covered by the inorganic layer above it, packaging effect is good, simultaneously, multiple inorganic layers may be used a set of mask plate and be prepared, and production cost is low.
Description
Technical field
The present invention relates to display technology field more particularly to a kind of OLED encapsulation method and OLED encapsulating structures.
Background technology
Organic LED display device (Organic Light Emitting Display, OLED) has spontaneous
Light, driving voltage are low, luminous efficiency is high, the response time is short, clarity and contrast are high, nearly 180 ° of visual angles, use temperature ranges
Width is known as being the display for most having development potentiality by industry, it can be achieved that many advantages, such as Flexible Displays are with large area total colouring
Device.
OLED according to type of drive can be divided into passive matrix OLED (Passive Matrix OLED, PMOLED) and
Active array type OLED (Active Matrix OLED, AMOLED) two major classes, i.e. direct addressin and film transistor matrix are sought
Two class of location.Wherein, AMOLED has the pixel in array arrangement, belongs to active display type, luminous efficacy is high, is typically used as
High-definition large scale display device.
OLED device generally includes：Substrate, the hole injection layer on anode, is set to sky at the anode on substrate
Hole transmission layer on the implanted layer of cave, the electron transfer layer on luminescent layer, is set to the luminescent layer on hole transmission layer
Electron injecting layer on electron transfer layer and the cathode on electron injecting layer.The principle of luminosity of OLED device is semiconductor
Material and luminous organic material pass through carrier injection and composite guide photoluminescence under electric field driven.Specifically, OLED device is logical
Frequently with tin indium oxide (ITO) electrode and metal electrode respectively as the anode and cathode of device, under certain voltage driving, electricity
Son and hole are injected into electron transfer layer and hole transmission layer from cathode and anode respectively, and electrons and holes are passed through electronics and passed respectively
Defeated layer and hole transmission layer move to luminescent layer, and meet in luminescent layer, form exciton and light emitting molecule is made to excite, Hou Zhejing
Overshoot relaxation and send out visible light.
Flexible OLED is the important research direction of OLED device.Luminescent material in OLED device is usually polymer or has
Machine small molecule, cathode material are usually the lower active metal of work function such as magnalium etc., these luminescent materials and cathode material pair
Steam and oxygen are very sensitive, and the infiltration of water/oxygen can reduce the service life of OLED device significantly, in order to reach commercialization for OLED
The requirement of the service life and stability of device, requirement of the OLED device for packaging effect is very high, usually requires that OLED devices
The service life of part is at least 104Hour or more, water vapor transmittance is less than 10-6g/m2/ day, oxygen penetration rate are less than 10-6cc/
m2/ day (1atm), therefore be encapsulated in the making of OLED device and be in very important position, it is the pass for influencing product yield
One of key factor.
Traditional encapsulation technology includes：(1) cover board encapsulation technology：Coating can be ultraviolet (UV) on packaged glass/metal
After cured frame glue or frame glue and desiccant-filled (Dam＆Fill) after solidification for luminescent device provide one it is relatively closed
Environment, to completely cut off water oxygen enter；(2) radium-shine encapsulation technology：The coated glass glue on packaged glass becomes after solvent flashing
Glass powder after substrate and encapsulation cover plate to be deposited are to group, are realized using laser fusion glass powder and is binded.Above traditional encapsulation skill
Art can reach effective water/oxygen barriering effect, but can increase the thickness and weight of device, therefore be unfavorable for preparing flexible
OLED。
In recent years, thin-film package (Thin Film Encapsulation, the TFE) technology come into being dexterously overcomes
The drawbacks of conventional packaging techniques, need not encapsulate OLED device using encapsulation cover plate and frame glue, but use thin-film package
Traditional glass-encapsulated is substituted, the encapsulation of large-size device may be implemented and makes device lightening.So-called film envelope
Dress forms inorganic-organic alternating layer on the areas the OLED surface of substrate, water oxygen is obstructed in a manner of deposition film.In film
In encapsulating structure, inorganic layer (main component is the oxide of the nitride of silicon, the oxide of silicon or aluminium) is effective resistance of water/oxygen
Barrier, but will produce some pin holes (Pinholes) or foreign matter (Particle) defect during preparing inorganic layer；And have
The effect of machine layer (including some high molecular polymers, siliceous organic matter, resin etc.) is exactly to cover the defect of inorganic layer, and can
To discharge the stress between inorganic layer, planarization is realized.
Common thin-film packing structure is as shown in Figure 1, include the multilayer inorganic layer being arranged alternately in OLED device 100
200 with multilayer organic layer 300, the area equation of the multilayer inorganic layer 200 and multilayer organic layer 300, the thin-film packing structure
The advantages of it is simple for preparation process, only need to singly cover mask plate (Mask) deposition of multilayer inorganic layer 200 can be completed, but sink
Organic layer 300 is not completely covered in long-pending inorganic layer 200, and 300 end of organic layer can touch air, and it is logical to provide steam entrance
Road, to destroy packaging effect.Therefore there is another thin-film packing structure (as shown in Figure 2) comprising in OLED device
The multilayer inorganic layer 200 ' being arranged alternately on 100 ' and multilayer organic layer 300 ', the thin-film packing structure require each layer of organic layer
The area of inorganic layer 200 ' above in the of 300 ' is all higher than the area of the organic layer 300 ', to realize each layer of organic layer 300 ' all
Can completely by above it inorganic layer 200 ' cover, avoid steam from organic layer 300 ' enter device inside, however, due to from
The area of the multilayer inorganic layer 200 ' gradually increases in 100 ' upwardly direction of OLED device, it is therefore desirable to more set mask plates
The deposition of multilayer inorganic layer 200 ' is completed, needs repeatedly to exchange mask plate in preparation process, complex process is readily incorporated uncontrollable
Factor.
Invention content
The purpose of the present invention is to provide a kind of OLED encapsulation methods, can improve packaging effect, while saving and being produced into
This.
The present invention also aims to provide a kind of OLED encapsulating structures, packaging effect is good, and production cost is low.
To achieve the above object, present invention firstly provides a kind of OLED encapsulation method, include the following steps：
Step 1 provides a underlay substrate, and OLED device is formed on the underlay substrate；
Step 2 forms first frame glue of circle on the underlay substrate around the OLED device, and to described the
One frame glue is cured, and the height of first frame glue is more than the height of the OLED device；
Step 3 forms the first inorganic layer on the OLED device, the first frame glue and underlay substrate, and described first is inorganic
Layer covers the OLED device and the first frame glue, and the area of first inorganic layer is more than first frame glue in the horizontal direction
On the area in region that surrounds；
Step 4 forms the first organic layer on first inorganic layer in the region on the inside of first frame glue, and
First organic layer is cured；
Step 5 forms the second inorganic layer, the second inorganic layer covering on first organic layer and the first inorganic layer
First organic layer, and the area of second inorganic layer is more than the area of first organic layer.
The height of first frame glue is 3 μm~20 μm, and the width of first frame glue is 0.1mm~5mm；
The distance between the inside edge of first frame glue and the OLED device edge are 1mm~10mm；
The ingredient of first frame glue includes at least one of silicones and acryl resin.
The outer ledge at the edge of first inorganic layer and the second inorganic layer and first frame glue in the horizontal direction
The distance between be 50 μm~2000 μm；
The thickness of first inorganic layer and the second inorganic layer is respectively 100nm~1 μm；
The ingredient of first inorganic layer and the second inorganic layer respectively includes the oxide of silicon, the nitride of silicon and aluminium
At least one of oxide；
The preparation method of first inorganic layer and the second inorganic layer respectively include plasma enhanced chemical vapor deposition,
At least one of atomic layer deposition and magnetron sputtering.
The thickness of first organic layer is 500nm~5 μm；
The ingredient of first organic layer includes at least one of silicones and polymethyl methacrylate；
The preparation method of first organic layer include in silk-screen printing, spin coating, inkjet printing and casting film-forming at least
It is a kind of.
Optionally, the OLED encapsulation method further includes：Step 6 forms at least one envelope on second inorganic layer
Fill unit, the encapsulation unit include the second frame glue, the second organic layer in the region on the inside of second frame glue and
Cover second organic layer and the third inorganic layer of the second frame glue.
The present invention also provides a kind of OLED encapsulating structures, including：Underlay substrate, the OLED devices on the underlay substrate
Part, is set to the OLED device, the first frame at the first frame glue on the underlay substrate and around the OLED device
The first inorganic layer on glue and underlay substrate is located on first inorganic layer in the region on the inside of first frame glue
First organic layer and the second inorganic layer on first organic layer and the first inorganic layer；
The height of first frame glue is more than the height of the OLED device；First inorganic layer covers the OLED devices
Part and the first frame glue, and the area of first inorganic layer is more than the face in the region that first frame glue surrounds in the horizontal direction
Product；Second inorganic layer covers first organic layer, and the area of second inorganic layer is more than first organic layer
Area.
The height of first frame glue is 3 μm~20 μm, and the width of first frame glue is 0.1mm~5mm；
The distance between the inside edge of first frame glue and the OLED device edge are 1mm~10mm；
The ingredient of first frame glue includes at least one of silicones and acryl resin.
The outer ledge at the edge of first inorganic layer and the second inorganic layer and first frame glue in the horizontal direction
The distance between be 50 μm~2000 μm；
The thickness of first inorganic layer and the second inorganic layer is respectively 100nm~1 μm；
The ingredient of first inorganic layer and the second inorganic layer respectively includes the oxide of silicon, the nitride of silicon and aluminium
At least one of oxide.
The thickness of first organic layer is 500nm~5 μm；
The ingredient of first organic layer includes at least one of silicones and polymethyl methacrylate.
Optionally, the OLED encapsulating structures further include：At least one encapsulation unit on second inorganic layer,
The encapsulation unit includes the second frame glue, the second organic layer in the region on the inside of second frame glue and covering institute
State the second organic layer and the third inorganic layer of the second frame glue.
Beneficial effects of the present invention：A kind of OLED encapsulation method provided by the invention combines frame glue encapsulation technology and thin
Film encapsulation technology carries out cofferdam to organic layer by using frame glue, can limit the size of organic layer, ensure that each layer has
Machine layer is completely covered by the inorganic layer above it, improves packaging effect, meanwhile, a set of mask plate may be used in multiple inorganic layers
It is prepared, reduces the usage quantity of mask plate, save production cost.A kind of OLED encapsulating structures provided by the invention, knot
Frame glue encapsulating structure and thin-film packing structure have been closed, cofferdam is carried out to organic layer by using frame glue, it can be to the size of organic layer
It being limited, ensures that each layer of organic layer is completely covered by the inorganic layer above it, packaging effect is good, meanwhile, it is multiple inorganic
Layer may be used a set of mask plate and be prepared, and production cost is low.
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with the detailed of the present invention
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
Description of the drawings
Below in conjunction with the accompanying drawings, it is described in detail by the specific implementation mode to the present invention, technical scheme of the present invention will be made
And other beneficial effects are apparent.
In attached drawing,
Fig. 1 is a kind of existing schematic cross-sectional view of thin-film packing structure；
Fig. 2 is the schematic cross-sectional view of existing another thin-film packing structure；
Fig. 3 is the flow chart of the OLED encapsulation method of the present invention；
Fig. 4 is the schematic diagram of the step 1 of the OLED encapsulation method of the present invention；
Fig. 5 is the schematic diagram of the step 2 of the OLED encapsulation method of the present invention；
Fig. 6 is the schematic diagram of the step 3 of the OLED encapsulation method of the present invention；
Fig. 7 is the schematic diagram of the step 4 of the OLED encapsulation method of the present invention；
Fig. 8 is the first of the schematic diagram of the step 5 of the OLED encapsulation method of the present invention and the OLED encapsulating structures of the present invention
The schematic cross-sectional view of embodiment；
Fig. 9 is the second of the schematic diagram of the step 6 of the OLED encapsulation method of the present invention and the OLED encapsulating structures of the present invention
The schematic cross-sectional view of embodiment.
Specific implementation mode
Further to illustrate the technological means and its effect of the invention taken, below in conjunction with the preferred implementation of the present invention
Example and its attached drawing are described in detail.
Referring to Fig. 3, the present invention provides a kind of OLED encapsulation method, include the following steps：
Step 1, as shown in figure 4, provide a underlay substrate 10, on the underlay substrate 10 formed OLED device 20.
Specifically, the underlay substrate 10 is TFT substrate.
Step 2, as shown in figure 5, on the underlay substrate 10 around the OLED device 20 formed one circle first
Frame glue 31, and first frame glue 31 is cured, the height of first frame glue 31 is more than the height of the OLED device 20
Degree.
Specifically, the height of first frame glue 31 is 3 μm~20 μm, the width of first frame glue 31 be 0.1mm~
5mm。
Specifically, the distance between the inside edge of first frame glue 31 and 20 edge of the OLED device be 1mm~
10mm。
Specifically, the ingredient of first frame glue 31 includes at least one of silicones and acryl resin.
Specifically, the curing mode of first frame glue 31 includes at least one of heat cure and UV solidifications, it is preferred that
The curing mode of first frame glue 31 cures for UV.
Step 3, as shown in fig. 6, being formed on the OLED device 20, the first frame glue 31 and underlay substrate 10 first inorganic
Layer 41, first inorganic layer 41 covers the OLED device 20 and the first frame glue 31, and the area of first inorganic layer 41
More than the area in the region that first frame glue 31 surrounds in the horizontal direction.
Specifically, the distance between the edge of first inorganic layer 41 and the outer ledge of first frame glue 31 are 50
μm~2000 μm.
Specifically, the thickness of first inorganic layer 41 is 100nm~1 μm.
Specifically, the preparation method of first inorganic layer 41 includes plasma enhanced chemical vapor deposition (Plasma
Enhanced Chemical Vapor Deposition, PECVD), atomic layer deposition (Atomic Layer Deposition,
ALD) at least one of with magnetron sputtering (Sputtering).
Specifically, the ingredient of first inorganic layer 41 includes the oxide of silicon (Si), the nitride of silicon and aluminium (Al)
At least one of oxide.
Step 4, as shown in fig. 7, being located at shape in the region of the inside of first frame glue 31 on first inorganic layer 41
Cure at the first organic layer 51, and to first organic layer 51.
In the preparation process of the first organic layer 51, first frame glue 31 plays the role of cofferdam anti-overflow, and limits
The size of the first organic layer 51 has been made, has ensured that first organic layer 51 can be completely covered in the second inorganic layer 42 subsequently made,
Improve packaging effect.
Specifically, the thickness of first organic layer 51 is 500nm~5 μm.
Specifically, the preparation method of first organic layer 51 includes silk-screen printing, spin coating, inkjet printing and is cast into
At least one of film.
Specifically, the ingredient of first organic layer 51 is organic resin.Preferably, the ingredient of first organic layer 51
Including at least one of silicones and polymethyl methacrylate.
Specifically, the curing mode of first organic layer 51 includes at least one of heat cure and UV solidifications, preferably
, the curing mode of first organic layer 51 is heat cure.
Step 5, as shown in figure 8, forming the second inorganic layer 42, institute on first organic layer, 51 and first inorganic layer 41
It states the second inorganic layer 42 and covers first organic layer 51, and the area of second inorganic layer 42 is more than first organic layer
51 area.
Specifically, in the horizontal direction the outer ledge of the edge of second inorganic layer 42 and first frame glue 31 it
Between distance be 50 μm~2000 μm.
Specifically, the thickness of second inorganic layer 42 is 100nm~1 μm.
Specifically, the preparation method of second inorganic layer 42 includes plasma enhanced chemical vapor deposition, atomic layer
At least one of deposition and magnetron sputtering.
Specifically, the ingredient of second inorganic layer 42 include the oxide of silicon, the nitride of silicon and aluminium oxide in
At least one.
Specifically, identical mask plate, which may be used, in second inorganic layer, 42 and first inorganic layer 41 prepares completion, from
And the usage quantity of mask plate is reduced, save production cost.
Optionally, OLED encapsulation method of the invention can also include：
Step 6, as shown in figure 9, form at least one encapsulation unit 60 on second inorganic layer 42, the encapsulation is single
Member 60 includes described in the second frame glue 32, the second organic layer 52 in the region of second frame glue, 32 inside and covering
The third inorganic layer 43 of second organic layer 52 and the second frame glue 32.
Specifically, the area of the third inorganic layer 43 is more than the region that second frame glue 32 surrounds in the horizontal direction
Area.
Preferably, second frame glue 32 is located at the periphery of first frame glue 31 in the horizontal direction.
Preferably, from 10 upwardly direction of the underlay substrate, the second frame at least one encapsulation unit 60
Horizontal distance between 20 edge of the inside edge of glue 32 and the OLED device gradually increases.
Specifically, the height of second frame glue 32 is 3 μm~20 μm, the width of second frame glue 32 be 0.1mm~
5mm。
Specifically, in the horizontal direction between 20 edge of the inside edge of second frame glue 32 and the OLED device
Distance is 1mm~10mm.
Specifically, the ingredient of second frame glue 32 includes at least one of silicones and acryl resin.
Specifically, the curing mode of second frame glue 32 includes at least one of heat cure and UV solidifications, it is preferred that
The curing mode of second frame glue 32 cures for UV.
Specifically, the thickness of the third inorganic layer 43 is 100nm~1 μm.
Specifically, the preparation method of the third inorganic layer 43 includes plasma enhanced chemical vapor deposition, atomic layer
At least one of deposition and magnetron sputtering.
Specifically, the ingredient of the third inorganic layer 43 include the oxide of silicon, the nitride of silicon and aluminium oxide in
At least one.
Specifically, the thickness of second organic layer 52 is 500nm~5 μm.
Specifically, the preparation method of second organic layer 52 includes silk-screen printing, spin coating, inkjet printing and is cast into
At least one of film.
Specifically, the ingredient of second organic layer 52 is organic resin.Preferably, the ingredient of second organic layer 52
Including at least one of silicones and polymethyl methacrylate.
Specifically, the curing mode of second organic layer 52 includes at least one of heat cure and UV solidifications, preferably
, the curing mode of second organic layer 52 is heat cure.
Specifically, the third inorganic layer 43 can be with first inorganic layer, 41 and second inorganic layer 42 using identical
Prepared by mask plate completes, and to reduce the usage quantity of mask plate, saves production cost.
The step 1 of the OLED encapsulation method of the present invention is explained in detail to step 5 below in conjunction with two preferred embodiments
It states.
Example one：
Step 1, as shown in figure 4, provide a underlay substrate 10, on the underlay substrate 10 formed OLED device 20.
Step 2, as shown in figure 5, on the underlay substrate 10 around the OLED device 20 formed one circle first
Frame glue 31, and first frame glue 31 is cured.
The height of first frame glue 31 is 3 μm~6 μm；The width of first frame glue 31 is 0.1mm~3mm；
The distance between inside edge and 20 edge of the OLED device of first frame glue 31 are 1.0mm~1.5mm；
The main component of first frame glue 31 is acryl resin；
The curing mode of first frame glue 31 cures for UV, and in UV solidification process, the energy density of UV light is 3000mJ/
cm2~5000mJ/cm2, UV irradiation times are 30s~100s.
Step 3, as shown in fig. 6, form the first inorganic layer 41 on the underlay substrate 10 and OLED device 20, described
One inorganic layer 41 covers the OLED device 20 and the first frame glue 31, and the area of first inorganic layer 41 is more than described first
The area in the region that frame glue 31 surrounds in the horizontal direction.
The main component of first inorganic layer 41 is the nitride of silicon；
The preparation method of first inorganic layer 41 is plasma enhanced chemical vapor deposition；The plasma enhancing
The technological parameter of chemical vapor deposition is：With monosilane (SiH4) and ammonia (NH3) be reaction gas, monosilane and ammonia it is pure
Degree is all higher than 99.99%, and auxiliary ionized gas is argon gas (Ar) (purity 99.99%), radio-frequency power supply power for 10W~
The pressure of 500W, deposit cavity are 10Pa~20Pa, and deposition rate is 3nm/s~20nm/s, sedimentation time 20min~60min.
Step 4, as shown in fig. 7, being located at shape in the region of the inside of first frame glue 31 on first inorganic layer 41
Cure at the first organic layer 51, and to first organic layer 51.
The preparation method of first organic layer 51 is inkjet printing；
The main component of first organic layer 51 be silicones, it is preferred that the viscosity of the silicones be 10cps~
20cps；
The thickness of first organic layer 51 is 500nm~800nm.
Step 5, as shown in figure 8, forming the second inorganic layer 42, institute on first organic layer, 51 and first inorganic layer 41
It states the second inorganic layer 42 and covers first organic layer 51, and the area of second inorganic layer 42 is more than first organic layer
51 area.
Example two：
Step 1, as shown in figure 4, provide a underlay substrate 10, on the underlay substrate 10 formed OLED device 20.
Step 2, as shown in figure 5, on the underlay substrate 10 around the OLED device 20 formed one circle first
Frame glue 31, and first frame glue 31 is cured.
The height of first frame glue 31 is 10 μm~15 μm；The width of first frame glue 31 is 1mm~2mm；
The distance between inside edge and 20 edge of the OLED device of first frame glue 31 are 1.5mm~2mm；
The main component of first frame glue 31 is silicones；
The curing mode of first frame glue 31 is heat cure, and the condition of heat cure is：60 DEG C~90 DEG C of heating temperature, adds
Hot time 30min~100min.
Step 3, as shown in fig. 6, form the first inorganic layer 41 on the underlay substrate 10 and OLED device 20, described
One inorganic layer 41 covers the OLED device 20 and the first frame glue 31, and the area of first inorganic layer 41 is more than described first
The area in the region that frame glue 31 surrounds in the horizontal direction.
The main component of first inorganic layer 41 is the nitride of silicon；
The preparation method of first inorganic layer 41 is plasma enhanced chemical vapor deposition；The plasma enhancing
The technological parameter of chemical vapor deposition is：With monosilane (SiH4) and ammonia (NH3) be reaction gas, monosilane and ammonia it is pure
Degree is all higher than 99.99%, and auxiliary ionized gas is argon gas (Ar) (purity 99.99%), radio-frequency power supply power for 10W~
The pressure of 500W, deposit cavity are 10Pa~20Pa, and deposition rate is 3nm/s~20nm/s, sedimentation time 20min~60min.
Step 4, as shown in fig. 7, being located at shape in the region of the inside of first frame glue 31 on first inorganic layer 41
Cure at the first organic layer 51, and to first organic layer 51.
The preparation method of first organic layer 51 is silk-screen printing；The main component of first organic layer 51 is poly- first
Base methyl acrylate；
The thickness of first organic layer 51 is 1 μm~2 μm；
The curing mode of first organic layer 51 is heat cure, and the condition of heat cure is：60 DEG C~90 DEG C of heating temperature,
Heating time 30min~90min.
Step 5, as shown in figure 8, forming the second inorganic layer 42, institute on first organic layer, 51 and first inorganic layer 41
It states the second inorganic layer 42 and covers first organic layer 51, and the area of second inorganic layer 42 is more than first organic layer
51 area.
Above-mentioned OLED encapsulation method combines frame glue encapsulation technology and thin film encapsulation technology, by using frame glue to organic
Layer carries out cofferdam, can limit the size of organic layer, ensures that each layer of organic layer is covered by the inorganic layer above it completely
Lid improves packaging effect, meanwhile, multiple inorganic layers may be used a set of mask plate and be prepared, and reduce the use of mask plate
Quantity saves production cost.
Referring to Fig. 8, being based on above-mentioned OLED encapsulation method, the present invention also provides a kind of OLED encapsulating structures, including：Substrate
Substrate 10, the OLED device 20 on the underlay substrate 10 are set on the underlay substrate 10 and are located at the OLED devices
The first frame glue 31 around part 20, the first inorganic layer on the OLED device 20, the first frame glue 31 and underlay substrate 10
41, the first organic layer 51, the Yi Jishe being located on first inorganic layer 41 in the region of first frame glue, 31 inside
The second inorganic layer 42 on first organic layer, 51 and first inorganic layer 41；
The height of first frame glue 31 is more than the height of the OLED device 20；First inorganic layer 41 covers described
OLED device 20 and the first frame glue 31, and the area of first inorganic layer 41 is more than first frame glue 31 in the horizontal direction
The area in the region surrounded；Second inorganic layer 42 covers first organic layer 51, and the face of second inorganic layer 42
Area of the product more than first organic layer 51.
Specifically, the underlay substrate 10 is TFT substrate.
Specifically, the height of first frame glue 31 is 3 μm~20 μm, the width of first frame glue 31 be 0.1mm~
5mm。
Specifically, the distance between the inside edge of first frame glue 31 and 20 edge of the OLED device be 1mm~
10mm。
Specifically, the ingredient of first frame glue 31 includes at least one of silicones and acryl resin.
Specifically, the edge of first inorganic layer, 41 and second inorganic layer 42 and first frame glue in the horizontal direction
The distance between 31 outer ledge is 50 μm~2000 μm.
Specifically, the thickness of first inorganic layer, 41 and second inorganic layer 42 is respectively 100nm~1 μm.
Specifically, the ingredient of first inorganic layer, 41 and second inorganic layer 42 respectively includes the nitrogen of the oxide of silicon, silicon
At least one of the oxide of compound and aluminium.
Preferably, the material of second inorganic layer 42, size and projected position on underlay substrate 10 and described the
One inorganic layer 41 is identical.
Specifically, the thickness of first organic layer 51 is 500nm~5 μm.
Specifically, the ingredient of first organic layer 51 is organic resin.Preferably, the ingredient of first organic layer 51
Including at least one of silicones and polymethyl methacrylate.
Referring to Fig. 9, optional, the OLED encapsulating structures can also include：On second inorganic layer 42
At least one encapsulation unit 60, the encapsulation unit 60 include the second frame glue 32, the region set on second frame glue, 32 inside
The third inorganic layer 43 of interior the second organic layer 52 and covering 52 and second frame glue 32 of the second organic layer.
Specifically, the area of the third inorganic layer 43 is more than the region that second frame glue 32 surrounds in the horizontal direction
Area.
Preferably, second frame glue 32 is located at the periphery of first frame glue 31 in the horizontal direction.
Preferably, from 10 upwardly direction of the underlay substrate, the second frame at least one encapsulation unit 60
Horizontal distance between 20 edge of the inside edge of glue 32 and the OLED device gradually increases.
Preferably, the height of second frame glue 32 is 3 μm~20 μm, the width of second frame glue 32 be 0.1mm~
5mm。
Specifically, in the horizontal direction between 20 edge of the inside edge of second frame glue 32 and the OLED device
Distance is 1mm~10mm.
Specifically, the ingredient of second frame glue 32 includes at least one of silicones and acryl resin.
Specifically, the ingredient of the third inorganic layer 43 include the oxide of silicon, the nitride of silicon and aluminium oxide in
At least one.
Specifically, the thickness of the third inorganic layer 43 is 100nm~1 μm.
Preferably, the material of the third inorganic layer 43, size and projected position on underlay substrate 10 and described the
One inorganic layer 41 and the second inorganic layer 42 are identical.
Specifically, the ingredient of second organic layer 52 is organic resin.Preferably, the ingredient of second organic layer 52
Including at least one of silicones and polymethyl methacrylate.
Specifically, the thickness of second organic layer 52 is 500nm~5 μm.
Above-mentioned OLED encapsulating structures, combine frame glue encapsulating structure and thin-film packing structure, by using frame glue to organic
Layer carries out cofferdam, can limit the size of organic layer, ensures that each layer of organic layer is covered by the inorganic layer above it completely
Lid, packaging effect is good, meanwhile, multiple inorganic layers may be used a set of mask plate and be prepared, and production cost is low.
In conclusion a kind of OLED encapsulation method of present invention offer and OLED encapsulating structures.The encapsulation sides OLED of the present invention
Method combines frame glue encapsulation technology and thin film encapsulation technology, and cofferdam is carried out to organic layer by using frame glue, can be to organic layer
Size is limited, and ensures that each layer of organic layer is completely covered by the inorganic layer above it, improves packaging effect, meanwhile, it is more
A inorganic layer may be used a set of mask plate and be prepared, and reduce the usage quantity of mask plate, save production cost.The present invention
OLED encapsulating structures, combine frame glue encapsulating structure and thin-film packing structure, by using frame glue to organic layer carry out cofferdam,
The size of organic layer can be limited, ensure that each layer of organic layer is completely covered by the inorganic layer above it, packaging effect
It is good, meanwhile, multiple inorganic layers may be used a set of mask plate and be prepared, and production cost is low.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding change and deformations are made in design, and all these change and distortions should all belong to the claims in the present invention
Protection domain.
Claims (10)
1. a kind of OLED encapsulation method, which is characterized in that include the following steps：
Step 1 provides a underlay substrate (10), and OLED device (20) is formed on the underlay substrate (10)；
Step 2 forms first frame glue of circle (31) on the underlay substrate (10) around the OLED device (20), and
First frame glue (31) is cured, the height of first frame glue (31) is more than the height of the OLED device (20)；
Step 3 forms the first inorganic layer (41) on the OLED device (20), the first frame glue (31) and underlay substrate (10),
First inorganic layer (41) covers the OLED device (20) and the first frame glue (31), and forms one in first inorganic layer
(41) top and the recess area on the inside of first frame glue (31), and the area of first inorganic layer (41) is more than institute
State the area in the region that the first frame glue (31) surrounds in the horizontal direction；
Step 4 is located at formation first in the recess area on the inside of first frame glue (31) on first inorganic layer (41)
Organic layer (51), and first organic layer (51) is cured；
Step 5 forms the second inorganic layer (42), second nothing on first organic layer (51) and the first inorganic layer (41)
Machine layer (42) covers first organic layer (51), and the area of second inorganic layer (42) is more than first organic layer
(51) area；
The distance between inside edge and the OLED device (20) edge of first frame glue (31) are 1mm~10mm.
2. OLED encapsulation method as described in claim 1, which is characterized in that the height of first frame glue (31) be 3 μm~
20 μm, the width of first frame glue (31) is 0.1mm~5mm；
The ingredient of first frame glue (31) includes at least one of silicones and acryl resin.
3. OLED encapsulation method as described in claim 1, which is characterized in that first inorganic layer (41) in the horizontal direction
And second the distance between the outer ledge of edge and first frame glue (31) of inorganic layer (42) be 50 μm~2000 μm；
First inorganic layer (41) and the thickness of the second inorganic layer (42) are respectively 100nm~1 μm；
The ingredient of first inorganic layer (41) and the second inorganic layer (42) respectively include the oxide of silicon, silicon nitride and
At least one of oxide of aluminium；
First inorganic layer (41) and the preparation method of the second inorganic layer (42) respectively include plasma enhanced chemical vapor
At least one of deposition, atomic layer deposition and magnetron sputtering.
4. OLED encapsulation method as described in claim 1, which is characterized in that the thickness of first organic layer (51) is
500nm~5 μm；
The ingredient of first organic layer (51) includes at least one of silicones and polymethyl methacrylate；
The preparation method of first organic layer (51) include in silk-screen printing, spin coating, inkjet printing and casting film-forming at least
It is a kind of.
5. OLED encapsulation method as described in claim 1, which is characterized in that further include：Step 6, in second inorganic layer
(42) at least one encapsulation unit (60) is formed on, the encapsulation unit (60) includes the second frame glue (32), is set to described second
The second organic layer (52) and covering second organic layer (52) in region on the inside of frame glue (32) and the second frame glue (32)
Third inorganic layer (43).
6. a kind of OLED encapsulating structures, which is characterized in that including：Underlay substrate (10) is set on the underlay substrate (10)
OLED device (20), be set to the first frame glue (31) on the underlay substrate (10) and around the OLED device (20),
The first inorganic layer (41) on the OLED device (20), the first frame glue (31) and underlay substrate (10) is set to described the
It is located at the first organic layer (51) in the recess area on the inside of first frame glue (31) on one inorganic layer (41) and is set to institute
State the first organic layer (51) and the second inorganic layer (42) on the first inorganic layer (41)；
The height of first frame glue (31) is more than the height of the OLED device (20)；First inorganic layer (41) covers institute
OLED device (20) and the first frame glue (31) are stated, and the area of first inorganic layer (41) exists more than first frame glue (31)
The area in the region surrounded in horizontal direction；Second inorganic layer (42) covers first organic layer (51), and described the
The area of two inorganic layers (42) is more than the area of first organic layer (51)；
The distance between inside edge and the OLED device (20) edge of first frame glue (31) are 1mm~10mm.
7. OLED encapsulating structures as claimed in claim 6, which is characterized in that the height of first frame glue (31) be 3 μm~
20 μm, the width of first frame glue (31) is 0.1mm~5mm；
The ingredient of first frame glue (31) includes at least one of silicones and acryl resin.
8. OLED encapsulating structures as claimed in claim 6, which is characterized in that first inorganic layer (41) in the horizontal direction
And second the distance between the outer ledge of edge and first frame glue (31) of inorganic layer (42) be 50 μm~2000 μm；
First inorganic layer (41) and the thickness of the second inorganic layer (42) are respectively 100nm~1 μm；
The ingredient of first inorganic layer (41) and the second inorganic layer (42) respectively include the oxide of silicon, silicon nitride and
At least one of oxide of aluminium.
9. OLED encapsulating structures as claimed in claim 6, which is characterized in that the thickness of first organic layer (51) is
500nm~5 μm；
The ingredient of first organic layer (51) includes at least one of silicones and polymethyl methacrylate.
10. OLED encapsulating structures as claimed in claim 6, which is characterized in that further include：Set on second inorganic layer (42)
On at least one encapsulation unit (60), the encapsulation unit (60) include the second frame glue (32), be set to second frame glue
(32) the of the second organic layer (52) in the region on the inside of and covering second organic layer (52) and the second frame glue (32)
Three inorganic layers (43).
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| CN201710036058.5A CN106684259B (en) | 2017-01-18 | 2017-01-18 | OLED encapsulation method and OLED encapsulating structures |
| PCT/CN2017/073728 WO2018133147A1 (en) | 2017-01-18 | 2017-02-16 | Oled packaging method, and oled packaging structure |
| US15/509,196 US10181579B2 (en) | 2017-01-18 | 2017-02-16 | Organic light-emitting diode (OLED) encapsulation methods and OLED encapsulation structure |
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| KR102552840B1 (en) * | 2017-12-15 | 2023-07-06 | 엘지디스플레이 주식회사 | Lighting device and display device |
| CN108110147B (en) * | 2018-01-08 | 2021-02-02 | 京东方科技集团股份有限公司 | Electroluminescent display panel, packaging method thereof and display device |
| JP6983084B2 (en) * | 2018-02-07 | 2021-12-17 | 株式会社ジャパンディスプレイ | Organic EL display device |
| CN108365135A (en) * | 2018-02-11 | 2018-08-03 | 武汉华星光电半导体显示技术有限公司 | OLED encapsulation method and OLED encapsulating structures |
| CN108511629A (en) | 2018-05-31 | 2018-09-07 | 京东方科技集团股份有限公司 | Oled display substrate and preparation method thereof, display device |
| CN109065744B (en) * | 2018-07-10 | 2020-03-17 | 武汉华星光电半导体显示技术有限公司 | OLED display panel and packaging method thereof |
| CN109103343B (en) * | 2018-07-12 | 2020-06-16 | 武汉华星光电半导体显示技术有限公司 | OLED display panel packaging component and OLED display device |
| CN109461823B (en) * | 2018-08-30 | 2020-11-10 | 昆山国显光电有限公司 | Packaging structure and packaging device |
| CN109238940A (en) * | 2018-09-29 | 2019-01-18 | 汉能新材料科技有限公司 | A kind of packaging film method for testing vapor transmission |
| CN111916473A (en) * | 2019-05-07 | 2020-11-10 | 上海和辉光电有限公司 | Thin film packaging device and manufacturing method thereof |
| JP2021034261A (en) * | 2019-08-27 | 2021-03-01 | 株式会社ジャパンディスプレイ | Display device |
| CN110649183A (en) * | 2019-09-02 | 2020-01-03 | 武汉华星光电半导体显示技术有限公司 | Manufacturing method of display panel |
| CN110707242A (en) | 2019-09-02 | 2020-01-17 | 武汉华星光电半导体显示技术有限公司 | Manufacturing method of display panel |
| CN111477656B (en) * | 2020-03-16 | 2023-01-31 | 福建华佳彩有限公司 | Processing method of glue layer of AMOLED panel |
| CN111948833A (en) * | 2020-08-14 | 2020-11-17 | Tcl华星光电技术有限公司 | Three-dimensional display device and manufacturing method |
| CN113013352B (en) * | 2021-01-29 | 2023-07-21 | 固安翌光科技有限公司 | Film packaging structure and organic photoelectric device |
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