CN106684159A - Design and preparation method of a surface film with atomic oxygen protection function - Google Patents
Design and preparation method of a surface film with atomic oxygen protection function Download PDFInfo
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 90
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 57
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 57
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 57
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 57
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 57
- 239000011521 glass Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 14
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 76
- 239000006059 cover glass Substances 0.000 claims description 39
- 238000000151 deposition Methods 0.000 claims description 26
- 230000008021 deposition Effects 0.000 claims description 22
- 238000001704 evaporation Methods 0.000 claims description 12
- 230000008020 evaporation Effects 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 238000005137 deposition process Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims 2
- 238000002835 absorbance Methods 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 238000005566 electron beam evaporation Methods 0.000 claims 1
- 239000008187 granular material Substances 0.000 claims 1
- 238000004062 sedimentation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 15
- 239000011248 coating agent Substances 0.000 abstract description 10
- 238000000576 coating method Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 6
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 5
- 238000010894 electron beam technology Methods 0.000 abstract description 3
- 238000002207 thermal evaporation Methods 0.000 abstract description 3
- 230000003471 anti-radiation Effects 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 description 33
- 229910004298 SiO 2 Inorganic materials 0.000 description 15
- 238000002834 transmittance Methods 0.000 description 13
- 210000004027 cell Anatomy 0.000 description 12
- 230000005855 radiation Effects 0.000 description 10
- 239000002131 composite material Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 238000012668 chain scission Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004925 denaturation Methods 0.000 description 1
- 230000036425 denaturation Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
Description
技术领域technical field
本发明属于光学薄膜设计领域,尤其是涉及一种具有原子氧防护功能的表面薄膜的设计及制备方法。The invention belongs to the field of optical film design, and in particular relates to a design and preparation method of a surface film with atomic oxygen protection function.
背景技术Background technique
目前人造卫星、飞船、空间站等航天器均利用太阳电池来获得持续运行的能量。为了保护太阳电池免受宇宙空间中的高能射线和带电粒子的辐射和轰击,延长太阳电池的使用寿命,常在太阳电池表面粘贴空间用抗辐照玻璃盖片。抗辐照玻璃盖片中掺有二氧化铈,能够有效吸收太阳光中紫外波段的光线,并大大减少了玻璃盖片中因高能粒子辐照所产生的色心,从而降低了盖片因辐照所引起的透射率衰降,保障了太阳电池输出功率的稳定持久。At present, artificial satellites, spaceships, space stations and other spacecraft all use solar cells to obtain energy for continuous operation. In order to protect the solar cell from the radiation and bombardment of high-energy rays and charged particles in space and prolong the service life of the solar cell, an anti-radiation glass cover sheet for space is often pasted on the surface of the solar cell. The radiation-resistant cover glass is doped with cerium oxide, which can effectively absorb the light in the ultraviolet band of sunlight, and greatly reduce the color centers in the cover glass caused by the irradiation of high-energy particles, thereby reducing the impact of radiation on the cover glass. The attenuation of transmittance caused by illumination ensures the stable and long-lasting output power of solar cells.
玻璃盖片的折射率在1.51左右,当太阳光垂直照射到玻璃盖片表面时,约有4%的光反射损失(单一表面反射损失)。为了减少这一部分的光损失,现有的工艺是在玻璃盖片表面沉积1/4波长光学厚度的MgF2薄膜。MgF2的折射率为1.38,理论上可以将太阳光垂直入射时的表面反射率降低到1.3%(单一表面反射损失),进一步提高了太阳电池组件的转换效率。The refractive index of the cover glass is about 1.51. When the sunlight is vertically irradiated on the surface of the cover glass, there is about 4% light reflection loss (single surface reflection loss). In order to reduce this part of light loss, the existing process is to deposit a MgF 2 film with an optical thickness of 1/4 wavelength on the surface of the cover glass. The refractive index of MgF 2 is 1.38, which can theoretically reduce the surface reflectance of sunlight to 1.3% (single surface reflection loss), which further improves the conversion efficiency of solar cell components.
在低地球轨道区域(Low Earth Orbit LEO,200km~600km),气体压强为10-5-10- 7Pa,环境组分中含有N2、O2、Ar、He、H2和原子氧(AO),其中以原子氧的含量最高,约占80%。原子氧是由氧气在紫外线的照射下分解形成的,活性很高,具有强氧化性。虽然在LEO轨道内,AO的空间密度仅为105~109/cm3,但由于航天器以接近8km/s的速度飞行,迎风面原子氧通量最高可接近1015/(cm2·s),而且其中少数原子氧还处于激发态,有向材料表面输送附加能量的能力,该能量足以引起高分子材料断链并形成低分子物质,这些物质及其氧化物的挥发造成材料的剥蚀。此外,原子氧会与航天器表面撞击产生辉光放电,造成材料表面开裂、龟裂和局部燃烧及熔化等,太阳紫外线特别是真空紫外线与原子氧的共同作用还会加剧原子氧对一些材料的剥蚀效应,严重影响到航天器的性能和使用寿命。NASA等机构所做的飞行实验、长期暴露实验和有限期选择性暴露实验均进一步证实了原子氧是导致航天器表面材料发生性能变化的主要原因。In the low earth orbit area (Low Earth Orbit LEO, 200km ~ 600km), the gas pressure is 10 -5 -10 - 7 Pa, and the environmental components contain N 2 , O 2 , Ar, He, H 2 and atomic oxygen (AO ), of which the content of atomic oxygen is the highest, accounting for about 80%. Atomic oxygen is formed by the decomposition of oxygen under the irradiation of ultraviolet rays. It is highly active and has strong oxidizing properties. Although in the LEO orbit, the space density of AO is only 10 5 ~10 9 /cm 3 , but since the spacecraft flies at a speed close to 8 km/s, the atomic oxygen flux on the windward side can reach up to 10 15 /(cm 2 · s), and a small number of atoms of oxygen are still in an excited state, which has the ability to transmit additional energy to the surface of the material, which is enough to cause chain scission of the polymer material and form low molecular substances, and the volatilization of these substances and their oxides causes the denudation of the material . In addition, atomic oxygen will collide with the surface of the spacecraft to produce glow discharge, which will cause surface cracking, cracking, local combustion and melting of the material, etc. The joint action of solar ultraviolet rays, especially vacuum ultraviolet rays, and atomic oxygen will also intensify the damage of atomic oxygen to some materials. The denudation effect seriously affects the performance and service life of the spacecraft. Flight experiments, long-term exposure experiments, and limited-term selective exposure experiments conducted by NASA and other institutions have further confirmed that atomic oxygen is the main cause of performance changes in spacecraft surface materials.
粘贴玻璃盖片的太阳电池组件在LEO中也会出现上述问题,在原子氧的强氧化性的作用下,MgF2逐渐被氧化为MgO。由于MgO的折射率约为1.74,当玻璃盖片表面的MgF2被氧化后,盖片的表面反射率将增加至11.0%,大大增加了太阳电池组件的表面光反射损失,对应的太阳电池的输出功率出现明显的下降。The above-mentioned problems will also occur in the solar cell module pasted with the glass cover sheet in LEO. Under the action of the strong oxidation of atomic oxygen, MgF 2 is gradually oxidized to MgO. Since the refractive index of MgO is about 1.74, when the MgF 2 on the surface of the cover glass is oxidized, the surface reflectance of the cover will increase to 11.0%, which greatly increases the surface light reflection loss of the solar cell module, and the corresponding output of the solar cell There is a noticeable drop in power.
现有的原子氧防护涂层的制备方法,是在制备ITO/MgF2复合靶材后,利用磁控溅射手段沉积获得的。以圆形ITO靶材为主要基底,在ITO靶材表面利用导电胶粘贴片状的扇形MgF2材料,实现对ITO靶材的部分覆盖。在氩气气氛下,利用磁控溅射手段制备复合涂层。片状MgF2对ITO基底靶材的覆盖面积比例约为15%~20%,直接影响了复合涂层中MgF2所占的比例。The existing method for preparing the atomic oxygen protective coating is obtained by depositing by means of magnetron sputtering after preparing the ITO/MgF 2 composite target. The circular ITO target is used as the main substrate, and the sheet-shaped fan-shaped MgF 2 material is pasted on the surface of the ITO target with conductive adhesive to achieve partial coverage of the ITO target. The composite coating was prepared by magnetron sputtering under argon atmosphere. The coverage area ratio of flake MgF 2 to the ITO substrate target is about 15% to 20%, which directly affects the proportion of MgF 2 in the composite coating.
由于复合涂层由ITO和MgF2两种材料混合而成,虽然MgF2所占的比例较少,但仍会因原子氧的氧化而发生变性。同时,ITO的折射率是在1.7~1.9左右,虽然掺有少量的MgF2,但复合涂层整体的折射率仍是明显高于玻璃盖片的,因此此种复合涂层无法为玻璃盖片带来良好的增透效果。Since the composite coating is made of a mixture of ITO and MgF 2 materials, although MgF 2 accounts for a small proportion, it will still be denatured due to the oxidation of atomic oxygen. At the same time, the refractive index of ITO is about 1.7 to 1.9. Although a small amount of MgF 2 is mixed in, the overall refractive index of the composite coating is still significantly higher than that of the cover glass, so this composite coating cannot be used for the cover glass. Bring good anti-reflection effect.
综上,对于空间用抗辐照玻璃盖片,上述复合涂层并不适用。需要提出一种新型的表面薄膜,既具有原子氧防护抗性,又能够为盖片提供良好的增透效果。To sum up, the above-mentioned composite coating is not suitable for the radiation-resistant glass cover slips used in space. There is a need to propose a new type of surface film that is both resistant to atomic oxygen shielding and capable of providing good anti-reflection effects for the cover slip.
发明内容Contents of the invention
本发明要解决的问题是提供一种一种具有原子氧防护功能的表面薄膜的设计及制备方法,尤其适合空间用抗辐照玻璃盖片表面薄膜,解决抗辐照玻璃盖片表面MgF2薄膜被LEO轨道中的原子氧氧化变性的问题。The problem to be solved by the present invention is to provide a design and preparation method of a surface film with atomic oxygen protection function, which is especially suitable for the surface film of the radiation-resistant glass cover sheet used in space, and solves the problem of MgF2 film on the surface of the radiation-resistant glass cover sheet. The problem of oxidative denaturation by atomic oxygen in the LEO orbital.
为解决上述技术问题,本发明采用的技术方案是:一种具有原子氧防护功能的表面薄膜,包括两层薄膜HSiO2和LSiO2,其结构如下:AIR∣HSiO2LSiO2∣GLASS,AIR为入射介质,HSiO2为折射率1.45±0.01的SiO2膜层,厚度为20±1nm,LSiO2为折射率1.28±0.02的SiO2膜层,厚度为95±5nm,GLASS为掺有二氧化铈的玻璃盖片。In order to solve the above-mentioned technical problems, the technical solution adopted in the present invention is: a surface film with atomic oxygen protection function, including two layers of film H SiO2 and L SiO2 , its structure is as follows: AIR∣H SiO2 L SiO2∣GLASS , AIR is Incident medium, H SiO2 is a SiO 2 film with a refractive index of 1.45±0.01, with a thickness of 20±1nm, L SiO2 is a SiO 2 film with a refractive index of 1.28±0.02, with a thickness of 95±5nm, and GLASS is a film doped with ceria glass cover slip.
进一步的,HSiO2SiO2膜层厚度为20nm,折射率1.45。Further, the thickness of the H SiO2 SiO 2 film is 20 nm, and the refractive index is 1.45.
进一步的,LSiO2SiO2膜层厚度为95nm,折射率1.28。Further, the thickness of the L SiO 2 SiO 2 film is 95 nm, and the refractive index is 1.28.
进一步的,入射介质为空气或真空。Further, the incident medium is air or vacuum.
一种制备具有原子氧防护功能的表面薄膜的方法,采用电子束热蒸发的方式将两层薄膜膜逐层沉积到玻璃盖片上,包括如下步骤:A method for preparing a surface film with an atomic oxygen protection function, using electron beam thermal evaporation to deposit two layers of film on a cover glass layer by layer, comprising the following steps:
(1)玻璃盖片进行清洗预处理;(1) The glass coverslip is cleaned and pretreated;
(2)在玻璃盖片上沉积第一层LSiO2薄膜,采用倾斜沉积方式,蒸发源沉积方向与玻璃盖片间的夹角为15°±2°,沉积第一层LSiO2薄膜厚度为95±5nm,折射率位1.28±0.02,真空室内无烘烤加热;(2) Deposit the first layer of L SiO2 film on the cover glass, using an oblique deposition method, the angle between the deposition direction of the evaporation source and the cover glass is 15°±2°, and the thickness of the first layer of L SiO2 film deposited is 95± 5nm, the refractive index is 1.28±0.02, no baking heating in the vacuum chamber;
(3)应用光谱椭偏仪对沉积第一层LSiO2薄膜在参考波长下的物理厚度和折射率进行测量;(3) The physical thickness and refractive index of the deposited first layer of L SiO2 film at the reference wavelength are measured by spectroscopic ellipsometer;
(4)在第一层LSiO2薄膜上沉积第二层沉积HSiO2薄膜,采用正常沉积工艺方法,蒸发源方向与玻璃盖片间的夹角为75°±2°,第二层沉积HSiO2薄膜的厚度为20±1nm,折射率为1.45±0.01,真空室内烘烤加热至150℃,沉积过程中使用离子源进行辅助沉积;(4) Deposit the second layer of H SiO2 film on the first layer of L SiO2 film, using the normal deposition process method, the angle between the direction of the evaporation source and the glass cover is 75 ° ± 2 °, the second layer of deposition H SiO2 The thickness of the film is 20±1nm, the refractive index is 1.45±0.01, it is baked and heated to 150°C in a vacuum chamber, and an ion source is used for assisted deposition during the deposition process;
(5)应用光谱椭偏仪对沉积第二层HSiO2薄膜载参考波长下的物理厚度和下折射率进行测量;(5) Spectroscopic ellipsometer is used to measure the physical thickness and lower refractive index of the deposited second layer of H SiO2 film under the reference wavelength;
(6)镀膜完成后,应用分光光度计测量玻璃盖片在280nm~1800nm范围内的透射率曲线。(6) After the coating is completed, use a spectrophotometer to measure the transmittance curve of the cover glass in the range of 280nm to 1800nm.
其中,蒸发源为SiO2颗粒,步骤(3)和步骤(5)中的参考波长为628nm。Wherein, the evaporation source is SiO 2 particles, and the reference wavelength in step (3) and step (5) is 628nm.
本发明具有的优点和积极效果是:由于采用上述技术方案,制备的表面薄膜的主要材质为SiO2,不会因被高活性的原子氧氧化而变性,提升了表面薄膜的化学稳定性。同时,该薄膜是专为空间用抗辐照玻璃盖片而设计的,材料折射率与玻璃盖片形成良好的匹配,镀膜后盖片的透射率较高,有利于提高太阳电池组件的工作效率。The advantages and positive effects of the present invention are: due to the adoption of the above technical scheme, the main material of the prepared surface film is SiO 2 , which will not be denatured due to oxidation by highly active atomic oxygen, and the chemical stability of the surface film is improved. At the same time, the film is specially designed for the radiation-resistant glass cover used in space. The refractive index of the material matches well with the glass cover. The transmittance of the coated cover is high, which is conducive to improving the working efficiency of solar cell modules. .
附图说明Description of drawings
图1是实际制备的沉积了1/4波长光学厚度的MgF2和SiO2的玻璃盖片的透射率曲线Figure 1 is the transmittance curve of the actually prepared glass cover slip deposited with 1/4 wavelength optical thickness of MgF2 and SiO2
图2是本发明具有原子氧防护功能的表面薄膜结构示意图Fig. 2 is a schematic diagram of the surface film structure of the present invention with atomic oxygen protection function
图3是本发明的倾斜沉积LSiO2膜层示意图Fig. 3 is the oblique deposition L SiO of the present invention Film layer schematic diagram
图4是本发明的正常工艺沉积HSiO2膜层示意图Fig. 4 is the normal process deposition H SiO of the present invention Film layer schematic diagram
图5是实际制备的沉积了1/4波长光学厚度的MgF2玻璃盖片和沉积了具有原子氧防护功能的表面薄膜的玻璃盖片的透射率曲线Figure 5 is the transmittance curve of the actually prepared MgF2 cover glass deposited with 1/4 wavelength optical thickness and the cover glass deposited with a surface film with atomic oxygen protection function
图中:In the picture:
1、基片 2、玻璃盖片 3、蒸发源沉积方向1. Substrate 2. Cover glass 3. Evaporation source deposition direction
4、蒸发源4. Evaporation source
具体实施方式detailed description
下面结合附图和具体实施例对本发明做进一步的说明。The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
为了解决抗辐照玻璃盖片表面MgF2薄膜被LEO轨道中原子氧氧化变性的问题,本发明提供一种具有原子氧防护功能的表面薄膜的设计及制备方法,适合空间抗辐照玻璃盖片用。其中,一种具有原子氧防护功能的表面薄膜,表面薄膜的设计采用组合膜层设计,包括HSiO2和LSiO2两层薄膜,其结构如下:AIR∣HSiO2LSiO2∣GLASS,如图2所示,AIR为入射介质,入射介质为空气或真空;HSiO2为折射率1.45±0.01的SiO2膜层,厚度为20±1nm;LSiO2为折射率1.28±0.02的SiO2膜层,厚度为95±5nm;GLASS为掺有二氧化铈的玻璃盖片。优选的,HSiO2SiO2膜层厚度为20nm,折射率1.45。优选的,LSiO2SiO2膜层厚度为95nm,折射率1.28。In order to solve the problem that the MgF2 film on the surface of the radiation-resistant glass cover is oxidized and denatured by the atomic oxygen in the LEO orbit, the present invention provides a design and preparation method of a surface film with the protection function of atomic oxygen, which is suitable for the space radiation-resistant glass cover use. Among them, a surface film with atomic oxygen protection function, the design of the surface film adopts the composite film design, including H SiO2 and L SiO2 two-layer film, its structure is as follows: AIR∣H SiO2 L SiO2∣GLASS , as shown in Figure 2 AIR is the incident medium, and the incident medium is air or vacuum; H SiO2 is a SiO 2 film with a refractive index of 1.45±0.01, with a thickness of 20±1nm; L SiO2 is a SiO 2 film with a refractive index of 1.28±0.02, with a thickness of 95±5nm; GLASS is a cover glass doped with ceria. Preferably, the H SiO2 SiO 2 film has a thickness of 20 nm and a refractive index of 1.45. Preferably, the L SiO2 SiO2 film has a thickness of 95 nm and a refractive index of 1.28.
利用氧化物制备玻璃盖片表面反射膜可以避免出现被原子氧氧化的问题,但常见的氧化物薄膜材料中折射率最低的是SiO2,折射率为1.45。若利用正常工艺制备SiO2减反射膜,其减反射膜效果将有所下降。如图1所示,图中给出了实际制备的沉积了1/4波长光学厚度的MgF2和SiO2的玻璃盖片的透射率曲线,在400nm~1100nm波长范围内(该波长范围是硅太阳电池的工作波长范围,同时也是三结砷化镓太阳电池的重要工作波长范围)二者的平均透射率分别为94.38%和93.65%。因此需要制备出低折射率的SiO2薄膜,此种薄膜既不会被原子氧氧化而发生变性,而且与玻璃盖片折射率相匹配,具有良好的透射效果。Using oxides to prepare reflective films on the surface of glass coverslips can avoid the problem of being oxidized by atomic oxygen, but SiO 2 has the lowest refractive index among common oxide film materials, with a refractive index of 1.45. If the SiO 2 anti-reflection film is prepared by using the normal process, the effect of the anti-reflection film will be reduced. As shown in Figure 1 , the figure shows the transmittance curve of the actually prepared glass cover glass deposited with 1/4 wavelength optical thickness of MgF2 and SiO2 , in the wavelength range of 400nm to 1100nm (this wavelength range is silicon The working wavelength range of the solar cell is also an important working wavelength range of the triple-junction gallium arsenide solar cell) and the average transmittances of the two are 94.38% and 93.65% respectively. Therefore, it is necessary to prepare a SiO 2 film with a low refractive index, which will not be denatured by atomic oxygen oxidation, and which matches the refractive index of the cover glass and has a good transmission effect.
该具有原子氧防护功能的表面薄膜的制备方法为采用电子束热蒸发的方式将2层薄膜逐层沉积到玻璃盖片上,包括如下步骤:The preparation method of the surface film with atomic oxygen protection function is to deposit two layers of film on the cover glass layer by layer by means of electron beam thermal evaporation, including the following steps:
(1)玻璃盖片2进行清洗预处理;(1) The glass coverslip 2 is cleaned and pretreated;
(2)在玻璃盖片2上沉积第一层LSiO2薄膜,为了获得低折射率的SiO2薄膜,采用倾斜沉积方式,如图3所示,蒸发源4沉积方向3与玻璃盖片2间的夹角为15°±2°,即减小蒸发源4沉积方向3与玻璃盖片2间的夹角,沉积第一层LSiO2薄膜厚度为95±5nm,折射率为1.28±0.02,真空室内无烘烤加热。利用倾斜沉积方式沉积薄膜,能够增加薄膜的孔隙度,从而降低薄膜的有效折射率;倾斜沉积时,真空室真空度为2.5×10-3Pa。(2) Deposit the first layer of L SiO on the cover glass 2 Thin film, in order to obtain the SiO of low refractive index Thin film, adopt oblique deposition mode, as shown in Figure 3, between evaporation source 4 deposition direction 3 and glass cover 2 The included angle is 15°±2°, that is, to reduce the included angle between the deposition direction 3 of the evaporation source 4 and the cover glass 2, and deposit the first layer of L SiO2 film with a thickness of 95±5nm and a refractive index of 1.28±0.02 in a vacuum Indoor heating without baking. Depositing the thin film by oblique deposition can increase the porosity of the thin film, thereby reducing the effective refractive index of the thin film; during oblique deposition, the vacuum degree of the vacuum chamber is 2.5×10 -3 Pa.
(3)应用光谱椭偏仪对沉积第一层LSiO2薄膜在参考波长下的物理厚度和折射率进行测量;(3) The physical thickness and refractive index of the deposited first layer of L SiO2 film at the reference wavelength are measured by spectroscopic ellipsometer;
(4)由于倾斜沉积获得的LSiO2膜层的孔隙度较大,为了使薄膜更加牢固,减少对杂质气体和水汽的吸附作用,在第一层LSiO2薄膜上沉积第二层沉积HSiO2薄膜,采用正常沉积工艺方法,如图4所示,蒸发源方向3与玻璃盖片2间的夹角为75°±2°,第二层沉积HSiO2薄膜的厚度为20±1nm,折射率为1.45±0.01,真空室内烘烤加热至150℃,沉积过程中使用离子源进行辅助沉积,该层薄膜主要起保护作用,保护第一层LSiO2薄膜不被空间原子氧撞击而造成表面开裂、龟裂和局部燃烧及熔化等现象;预沉积时真空室真空度为3.0×10-3Pa,介质气体为氩气,离子能量为80eV,束流5A。(4) Due to the large porosity of the L SiO2 film obtained by oblique deposition, in order to make the film firmer and reduce the adsorption of impurity gases and water vapor, a second layer of H SiO2 film is deposited on the first layer of L SiO2 film , using the normal deposition process method, as shown in Figure 4, the angle between the evaporation source direction 3 and the cover glass 2 is 75°±2°, the thickness of the second layer deposited H SiO2 film is 20±1nm, and the refractive index is 1.45±0.01, baked and heated to 150°C in a vacuum chamber, and an ion source was used for auxiliary deposition during the deposition process. This layer of film mainly plays a protective role, protecting the first layer of L SiO2 film from being hit by space atomic oxygen and causing surface cracking and turtles. Cracking, partial combustion and melting; during pre-deposition, the vacuum degree of the vacuum chamber is 3.0×10 -3 Pa, the medium gas is argon, the ion energy is 80eV, and the beam current is 5A.
使用离子源辅助沉积时:惰性气体被电离后形成离子,离子被电场加速后轰击向玻璃盖片2。离子轰击给到达玻璃盖片2的膜料粒子提供足够的动能,从而提高淀积粒子的迁移率,增加膜层聚集密度,填充膜内空隙缺陷。(5)应用光谱椭偏仪对沉积第二层HSiO2薄膜在参考波长下的厚度和下折射率进行测量;When using an ion source to assist deposition: the inert gas is ionized to form ions, and the ions are accelerated by an electric field and then bombard to the cover glass 2 . The ion bombardment provides sufficient kinetic energy to the film material particles reaching the cover glass 2, thereby improving the mobility of the deposited particles, increasing the aggregation density of the film layer, and filling the void defects in the film. (5) The thickness and the lower refractive index of the deposited second layer of H SiO2 film at the reference wavelength are measured by spectroscopic ellipsometer;
(6)镀膜完成后,应用分光光度计测量玻璃盖片2在280nm~1800nm范围内的透射率曲线。如图5所示,沉积了表面薄膜的玻璃盖片2在400nm~1100nm范围内的平均透射率为95.11%,其透射效果优于MgF2盖片的94.38%。(6) After the coating is completed, measure the transmittance curve of the cover glass 2 in the range of 280nm-1800nm with a spectrophotometer. As shown in FIG. 5 , the average transmittance of the cover glass 2 deposited with the surface film in the range of 400nm-1100nm is 95.11%, which is better than the 94.38% of the cover glass of MgF 2 .
其中,蒸发源4材料为SiO2颗粒,直径为2mm~4mm。步骤(3)和步骤(5)中的参考波长为628nm。Wherein, the evaporation source 4 is made of SiO 2 particles with a diameter of 2mm-4mm. The reference wavelength in step (3) and step (5) is 628nm.
将表面薄膜制备到掺有二氧化铈的玻璃盖片上,此种玻璃盖片在400nm-1800nm内的平均透射率为92.2%,截止吸收波长为330nm,制备的表面薄膜在400nm~1100nm范围内的平均透射率为95.11%,与玻璃盖片形成良好的匹配,镀膜后玻璃盖片的透射率较高。The surface film is prepared on the cover glass doped with cerium oxide. The average transmittance of the cover glass is 92.2% in the range of 400nm-1800nm, and the cut-off absorption wavelength is 330nm. The prepared surface film is in the range of 400nm-1100nm. The average transmittance is 95.11%, forming a good match with the cover glass, and the transmittance of the cover glass after coating is relatively high.
本发明具有的优点和积极效果是:由于采用上述技术方案,制备的表面薄膜的主要材质为SiO2,不会因被高活性的原子氧氧化而变性,提升了表面薄膜的化学稳定性。同时,该薄膜是专为空间用抗辐照玻璃盖片而设计的,材料折射率与玻璃盖片形成良好的匹配,镀膜后盖片的透射率较高,有利于提高太阳电池组件的工作效率。The advantages and positive effects of the present invention are: due to the adoption of the above technical scheme, the main material of the prepared surface film is SiO 2 , which will not be denatured due to oxidation by highly active atomic oxygen, and the chemical stability of the surface film is improved. At the same time, the film is specially designed for the radiation-resistant glass cover used in space. The refractive index of the material matches well with the glass cover. The transmittance of the coated cover is high, which is conducive to improving the working efficiency of solar cell modules. .
以上对本发明的一个实施例进行了详细说明,但所述内容仅为本发明的较佳实施例,不能被认为用于限定本发明的实施范围。凡依本发明申请范围所作的均等变化与改进等,均应仍归属于本发明的专利涵盖范围之内。An embodiment of the present invention has been described in detail above, but the content described is only a preferred embodiment of the present invention, and cannot be considered as limiting the implementation scope of the present invention. All equivalent changes and improvements made according to the application scope of the present invention shall still belong to the scope covered by the patent of the present invention.
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CN112666646A (en) * | 2020-12-15 | 2021-04-16 | 兰州空间技术物理研究所 | Anti-static ultraviolet reflecting film and preparation method thereof |
CN113896929A (en) * | 2021-10-13 | 2022-01-07 | 北京博瑞原子空间能源科技有限公司 | A kind of flexible glass and its preparation method and application |
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