CN106684159A - Method for design and preparation of surface film with elemental oxygen protection function - Google Patents
Method for design and preparation of surface film with elemental oxygen protection function Download PDFInfo
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- CN106684159A CN106684159A CN201611234122.2A CN201611234122A CN106684159A CN 106684159 A CN106684159 A CN 106684159A CN 201611234122 A CN201611234122 A CN 201611234122A CN 106684159 A CN106684159 A CN 106684159A
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- elemental oxygen
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 239000001301 oxygen Substances 0.000 title claims abstract description 42
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 74
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 68
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 68
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 68
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 68
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 68
- 239000011521 glass Substances 0.000 claims abstract description 16
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims abstract description 6
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 54
- 239000006059 cover glass Substances 0.000 claims description 52
- 238000000151 deposition Methods 0.000 claims description 32
- 239000010409 thin film Substances 0.000 claims description 32
- 230000008021 deposition Effects 0.000 claims description 25
- 238000001704 evaporation Methods 0.000 claims description 12
- 230000008020 evaporation Effects 0.000 claims description 12
- 238000002835 absorbance Methods 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 239000008187 granular material Substances 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 17
- 239000000126 substance Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 230000003471 anti-radiation Effects 0.000 abstract 1
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 229940044927 ceric oxide Drugs 0.000 abstract 1
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000002131 composite material Substances 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 230000007850 degeneration Effects 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
The invention provides a method for design and preparation of a surface film with an elemental oxygen protection function. The design of the surface film adopts a combined film layer and a structure thereof is as follows: AIR|HSiO2LSiO2|GLASS, wherein AIR is an incident medium, HSiO2 is a SiO2 film layer with the refractive index of 1.45+/-0.01 and the thickness of 20+/-1 nm, LSiO2 is a SiO2 film layer with the refractive index of 1.28+/-0.02 and the thickness of 95+/-5 nm, GLASS is a glass cover sheet doped with ceric oxide, and two layers of films are deposited on the glass cover sheet layer by layer through an electron beam evaporation way. The method has the beneficial effects that the main material of the surface film prepared by adopting the method is SiO2, so that the surface film cannot be oxidized by highly active elemental oxygen to denature, so that the chemical stability of the surface film is improved. Meanwhile, the film is specially designed for anti-radiation glass cover sheet for space, the refractive index of the material and the glass cover sheet form a good match, and the cover sheet after film coating has higher transmissivity to be helpful for improving the working efficiency of a solar cell module.
Description
Technical field
The invention belongs to optical thin film design field, more particularly, to a kind of surface film with elemental oxygen safeguard function
Design and preparation method.
Background technology
At present the spacecraft such as artificial satellite, airship, space station obtains the energy of continuous service using solar cell.For
Protect solar cell from the radiation and bombardment of the high-energy ray in cosmic space and charged particle, extend making for solar cell
With the life-span, often spaceborne anti-irradiation coverglass is pasted in solar battery surface.Mixed with ceria in Flouride-resistani acid phesphatase cover glass,
The light of ultraviolet band in sunlight can be effectively absorbed, and is greatly reduced in cover glass because produced by high energy particle irradiation
Colour center, so as to reduce cover plate because the absorbance caused by irradiation declines drop, ensured that stablizing for solar cell output is held
Long.
The refractive index of cover glass, when sunlight vertical irradiation is to cover glass surface, there are about 4% 1.51 or so
Light reflection loss (single surface reflection loss).In order to reduce this part of light loss, existing technique is in cover glass
Surface deposits the MgF of 1/4 wave optical thickness2Thin film.MgF2Refractive index be 1.38, sunlight can vertically be entered in theory
Surface reflectivity when penetrating is reduced to 1.3% (single surface reflection loss), further increases the conversion of solar module
Efficiency.
At Low Earth Orbit region (Low Earth Orbit LEO, 200km~600km), gas pressure intensity is 10-5-10- 7Pa, in environment component N is contained2、O2、Ar、He、H2With elemental oxygen (AO), wherein with the content highest of elemental oxygen, accounting for 80%.
Elemental oxygen is decomposed to form by oxygen under ultraviolet irradiation, and activity is very high, with strong oxidizing property.Although in LEO tracks
Interior, the spatial density of AO is only 105~109/cm3, but because spacecraft is flown with the speed for being close to 8km/s, windward side elemental oxygen
Flux highest accessible 1015/(cm2S), and wherein minority elemental oxygen is also in excited state, oriented material surface conveying is attached
Plus the ability of energy, the energy be enough to cause macromolecular material chain rupture and formed lower-molecular substance, these materials and its oxide
Volatilization cause degrading for material.In addition, elemental oxygen can produce glow discharge with spacecraft surface impacts, cause material surface to open
Split, be cracked and partial combustion and fusing etc., solar ultraviolet is particularly vacuum ultraviolet can also be added with the collective effect of elemental oxygen
Erosion of the acute elemental oxygen to some materials, badly influences the performance and used life of spacecraft.The mechanisms such as NASA are done
Flight experiment, long-term exposure experiment and the exposure experiment of limited period selectivity further demonstrate that elemental oxygen is to cause spacecraft
There is the main cause of performance change in surfacing.
The solar module of sticking glass cover plate also occurs the problems referred to above in LEO, in the strong oxidizing property of elemental oxygen
In the presence of, MgF2Gradually it is oxidized to MgO.Because the refractive index of MgO is about 1.74, as the MgF on cover glass surface2By oxygen
After change, the surface reflectivity of cover plate will be increased to 11.0%, considerably increase the surface light reflection loss of solar module, right
Significantly declining occurs in the output of the solar cell answered.
The preparation method of existing atom oxygen protective coating, is to prepare ITO/MgF2After composite target material, splashed using magnetic control
Shooter's section deposition is obtained.With circular ITO target as major bases, on ITO target surface the fan of conducting resinl pasted sheet-shaped is utilized
Shape MgF2Material, realizes that the part to ITO target covers.Under an argon atmosphere, composite coating is prepared using magnetron sputtering means.
Lamellar MgF215%~20% is about to the area coverage ratio of ITO substrate target, MgF in composite coating is directly affects2It is shared
Ratio.
Because composite coating is by ITO and MgF2Bi-material is mixed, although MgF2Shared ratio is less, but still meeting
There is degeneration because of the oxidation of elemental oxygen.Meanwhile, the refractive index of ITO is 1.7~1.9 or so, although mixed with a small amount of MgF2,
But the overall refractive index of composite coating is still that, apparently higher than cover glass, therefore this kind of composite coating cannot be cover glass band
Carry out good antireflective effect.
To sum up, for spaceborne anti-irradiation coverglass, above-mentioned composite coating is not simultaneously applied to.Need proposition a kind of new
Surface film, both protected resistance with elemental oxygen, can provide good antireflective effect for cover plate again.
The content of the invention
The problem to be solved in the present invention be to provide a kind of design of surface film with elemental oxygen safeguard function and
Preparation method, is especially suitable for spaceborne anti-irradiation coverglass surface film, solves Flouride-resistani acid phesphatase cover glass surface MgF2Thin film
By the problem of the elemental oxygen oxidative deformation in LEO tracks.
To solve above-mentioned technical problem, the technical solution used in the present invention is：A kind of table with elemental oxygen safeguard function
Face thin film, including double-layer filmses HSiO2And LSiO2, its structure is as follows：AIR∣HSiO2LSiO2∣ GLASS, AIR are incident medium, HSiO2
For the SiO of refractive index 1.45 ± 0.012Film layer, thickness is 20 ± 1nm, LSiO2For the SiO of refractive index 1.28 ± 0.022Film layer is thick
Spend for 95 ± 5nm, GLASS is the cover glass mixed with ceria.
Further, HSiO2SiO2Thicknesses of layers is 20nm, refractive index 1.45.
Further, LSiO2SiO2Thicknesses of layers is 95nm, refractive index 1.28.
Further, incident medium is air or vacuum.
A kind of method for preparing the surface film with elemental oxygen safeguard function, by two by the way of electron beam evaporation
Layer film film layer by layer deposition comprises the steps on cover glass：
(1) cover glass carries out cleaning pretreatment；
(2) ground floor L is deposited on cover glassSiO2Thin film, using inclined deposition mode, evaporation source deposition direction and glass
Angle between glass cover plate is 15 ° ± 2 °, deposits ground floor LSiO2Film thickness be 95 ± 5nm, refractive index position 1.28 ± 0.02, very
Without Baking out in empty room；
(3) using spectroscopic ellipsometers to depositing ground floor LSiO2Physical thickness and refractive index of the thin film under reference wavelength enters
Row measurement；
(4) in ground floor LSiO2Second layer deposition H is deposited on thin filmSiO2Thin film, using normal sedimentation process, evaporation
Angle between source direction and cover glass is 75 ° ± 2 °, second layer deposition HSiO2The thickness of thin film is 20 ± 1nm, and refractive index is
1.45 ± 0.01, to 150 DEG C, ion source carries out assistant depositing to Baking out used in deposition process in vacuum room；
(5) using spectroscopic ellipsometers to depositing second layer HSiO2Thin film carries physical thickness and lower refractive index under reference wavelength
Measure；
(6) after the completion of plated film, using absorbance of the spectrophotometer measurement cover glass in the range of 280nm~1800nm
Curve.
Wherein, evaporation source is SiO2Granule, the reference wavelength in step (3) and step (5) is 628nm.
The present invention has the advantages and positive effects that：Due to adopting above-mentioned technical proposal, the master of the surface film of preparation
Material is wanted to be SiO2, the chemical stability of surface film will not be improved because being aoxidized and degeneration by highly active elemental oxygen.Together
When, the thin film aims at spaceborne anti-irradiation coverglass and designs, and Refractive Index of Material and cover glass form good
Match somebody with somebody, the absorbance of plated film back cover plate is higher, be conducive to improving the work efficiency of solar module.
Description of the drawings
Fig. 1 is the MgF that deposited 1/4 wave optical thickness of actual preparation2And SiO2Cover glass transmittance graph
Fig. 2 is surface film structural representation of the present invention with elemental oxygen safeguard function
Fig. 3 is the inclined deposition L of the present inventionSiO2Film layer schematic diagram
Fig. 4 is the normal process deposition H of the present inventionSiO2Film layer schematic diagram
Fig. 5 is the MgF that deposited 1/4 wave optical thickness of actual preparation2Cover glass and deposited with elemental oxygen
The transmittance graph of the cover glass of the surface film of safeguard function
In figure：
1st, substrate 2, cover glass 3, evaporation source deposition direction
4th, evaporation source
Specific embodiment
Below in conjunction with the accompanying drawings the present invention is described further with specific embodiment.
In order to solve Flouride-resistani acid phesphatase cover glass surface MgF2Thin film is by the problem of elemental oxygen oxidative deformation in LEO tracks, sheet
Invention provides a kind of design of surface film with elemental oxygen safeguard function and preparation method, is adapted to space Flouride-resistani acid phesphatase glass cover
Piece is used.Wherein, a kind of surface film with elemental oxygen safeguard function, the combination film layer that is designed with of surface film is designed, bag
Include HSiO2And LSiO2Double-layer filmses, its structure is as follows：AIR∣HSiO2LSiO2∣ GLASS, as shown in Fig. 2 AIR is incident medium, enter
Medium is penetrated for air or vacuum；HSiO2For the SiO of refractive index 1.45 ± 0.012Film layer, thickness is 20 ± 1nm；LSiO2For refractive index
1.28 ± 0.02 SiO2Film layer, thickness is 95 ± 5nm；GLASS is the cover glass mixed with ceria.Preferably,
HSiO2SiO2Thicknesses of layers is 20nm, refractive index 1.45.Preferably, LSiO2SiO2Thicknesses of layers is 95nm, refractive index 1.28.
Preparing cover glass surface reflectance coating using oxide can avoid the occurrence of by the problem of elemental oxygen oxidation, but common
Oxide film material in refractive index it is minimum be SiO2, refractive index is 1.45.If preparing SiO using normal process2Antireflective
Film, its antireflective coating effect will decline.As shown in figure 1, give in figure actual preparation to deposited 1/4 wavelength optical thick
The MgF of degree2And SiO2Cover glass transmittance graph, (wave-length coverage is silicon in 400nm~1100nm wave-length coverages
The operating wavelength range of solar cell, while being also the important process wave-length coverage of three-junction gallium arsenide solar battery) the two flat
Absorbance is respectively 94.38% and 93.65%.Therefore need to prepare the SiO of low-refraction2Thin film, this kind of thin film is neither
Can be aoxidized by elemental oxygen and degeneration occurs, and be matched with cover glass refractive index, with good transmission effects.
The preparation method should with the surface film of elemental oxygen safeguard function is by 2 layers by the way of electron beam evaporation
Layer by layer deposition of thin films comprises the steps on cover glass：
(1) cover glass 2 carries out cleaning pretreatment；
(2) ground floor L is deposited on cover glass 2SiO2Thin film, in order to obtain the SiO of low-refraction2Thin film, using inclination
Depositional mode, as shown in figure 3, the angle between the deposition direction 3 of evaporation source 4 and cover glass 2 is 15 ° ± 2 °, that is, reduces evaporation source 4
Angle between deposition direction 3 and cover glass 2, deposits ground floor LSiO2Film thickness be 95 ± 5nm, refractive index be 1.28 ±
0.02, without Baking out in vacuum room.Using inclined deposition mode deposition film, by increasing capacitance it is possible to increase the porosity of thin film, so as to drop
The effective refractive index of low thin film；During inclined deposition, vacuum degree in vacuum chamber is 2.5 × 10-3Pa。
(3) using spectroscopic ellipsometers to depositing ground floor LSiO2Physical thickness and refractive index of the thin film under reference wavelength enters
Row measurement；
(4) due to the L of inclined deposition acquisitionSiO2The porosity of film layer is larger, in order that thin film is more firm, reduces to miscellaneous
The adsorption of matter gas and steam, in ground floor LSiO2Second layer deposition H is deposited on thin filmSiO2Thin film, using normal sedimentation work
Process, as shown in figure 4, the angle between evaporation source direction 3 and cover glass 2 is 75 ° ± 2 °, second layer deposition HSiO2Thin film
Thickness be 20 ± 1nm, refractive index be 1.45 ± 0.01, in vacuum room Baking out to 150 DEG C, ion source used in deposition process
Assistant depositing is carried out, the layer film mainly shields, protect ground floor LSiO2Thin film is not clashed into by space elemental oxygen and is made
Into face checking, cracking and the phenomenon such as partial combustion and fusing；Vacuum degree in vacuum chamber is 3.0 × 10 during pre-deposition-3Pa, medium gas
Body is argon, and ion energy is 80eV, line 5A.
During using ion source assisted：Noble gases form ion after being ionized, ion bombarded after electric field acceleration to
Cover glass 2.The coating materials particle that ion bom bardment is given to up to cover glass 2 provides enough kinetic energy, so as to improve deposit particle
Mobility, increases film layer gather density, filling film internal pore defect.(5) using spectroscopic ellipsometers to depositing second layer HSiO2It is thin
Thickness and lower refractive index of the film under reference wavelength is measured；
(6) after the completion of plated film, using transmission of the spectrophotometer measurement cover glass 2 in the range of 280nm~1800nm
Rate curve.As shown in figure 5, deposited average transmittance of the cover glass 2 of surface film in the range of 400nm~1100nm being
95.11%, its transmission effects is better than MgF2The 94.38% of cover plate.
Wherein, the material of evaporation source 4 is SiO2Granule, a diameter of 2mm~4mm.Reference wave in step (3) and step (5)
A length of 628nm.
Surface film is prepared on the cover glass mixed with ceria, this kind of cover glass is in 400nm-1800nm
Average transmittance be 92.2%, cut-off absorption wavelength be 330nm, the surface film of preparation is in the range of 400nm~1100nm
Average transmittance be 95.11%, with cover glass formed it is good match, the absorbance of cover glass is higher after plated film.
The present invention has the advantages and positive effects that：Due to adopting above-mentioned technical proposal, the master of the surface film of preparation
Material is wanted to be SiO2, the chemical stability of surface film will not be improved because being aoxidized and degeneration by highly active elemental oxygen.Together
When, the thin film aims at spaceborne anti-irradiation coverglass and designs, and Refractive Index of Material and cover glass form good
Match somebody with somebody, the absorbance of plated film back cover plate is higher, be conducive to improving the work efficiency of solar module.
One embodiment of the present of invention has been described in detail above, but the content is only the preferable enforcement of the present invention
Example, it is impossible to be considered as the practical range for limiting the present invention.All impartial changes made according to the present patent application scope and improvement
Deng, all should still belong to the present invention patent covering scope within.
Claims (7)
1. a kind of surface film with elemental oxygen safeguard function, it is characterised in that：Including double-layer filmses HSiO2And LSiO2, its knot
Structure is as follows：AIR∣HSiO2 LSiO2∣ GLASS, the AIR be incident medium, described HSiO2For refractive index 1.45 ± 0.01
SiO2Film layer, thickness is 20 ± 1nm, the LSiO2For the SiO of refractive index 1.28 ± 0.022Film layer, thickness is 95 ± 5nm, described
GLASS is the cover glass mixed with ceria.
2. the surface film with elemental oxygen safeguard function according to claim 1, it is characterised in that：Described
HSiO2SiO2Thicknesses of layers is 20nm, refractive index 1.45.
3. the surface film with elemental oxygen safeguard function according to claim 1, it is characterised in that：Described
LSiO2SiO2Thicknesses of layers is 95nm, refractive index 1.28.
4. the surface film with elemental oxygen safeguard function according to claim 1, it is characterised in that：Described incident Jie
Matter is air or vacuum.
5. a kind of method of the surface film with elemental oxygen safeguard function prepared described in claim 1, it is characterised in that：Adopt
With the mode of electron beam evaporation by the double-layer filmses layer by layer deposition to the cover glass, comprise the steps：
(1) cover glass carries out cleaning pretreatment；
(2) ground floor L is deposited on the cover glassSiO2Thin film, using inclined deposition mode, evaporation source deposition direction and institute
It is 15 ° ± 2 ° to state the angle between cover glass, the deposition ground floor LSiO2Film thickness is 95 ± 5nm, and refractive index is 1.28
± 0.02, without Baking out in vacuum room；
(3) using spectroscopic ellipsometers to the deposition ground floor LSiO2Physical thickness and refractive index of the thin film under reference wavelength enters
Row measurement；
(4) in the ground floor LSiO2Second layer deposition H is deposited on thin filmSiO2Thin film, using normal sedimentation process, evaporation
Angle between source direction and the cover glass is 75 ° ± 2 °, and the second layer deposits HSiO2The thickness of thin film is 20 ± 1nm,
Refractive index is 1.45 ± 0.01, and to 150 DEG C, ion source carries out assistant depositing to Baking out used in deposition process in vacuum room；
(5) using spectroscopic ellipsometers to the deposition second layer HSiO2Physical thickness and lower refractive index of the thin film under reference wavelength
Measure；
(6) after the completion of plated film, the absorbance using spectrophotometer measurement cover glass in the range of 280nm~1800nm is bent
Line.
6. the method that preparation according to claim 5 has the surface film of elemental oxygen safeguard function, it is characterised in that：Institute
The evaporation source stated is SiO2Granule.
7. the method that preparation according to claim 5 has the surface film of elemental oxygen safeguard function, it is characterised in that：Institute
It is 628nm to state the reference wavelength in step (3) and step (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611234122.2A CN106684159B (en) | 2016-12-28 | 2016-12-28 | A kind of design and preparation method of the surface film with elemental oxygen safeguard function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611234122.2A CN106684159B (en) | 2016-12-28 | 2016-12-28 | A kind of design and preparation method of the surface film with elemental oxygen safeguard function |
Publications (2)
| Publication Number | Publication Date |
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| CN106684159A true CN106684159A (en) | 2017-05-17 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108333647A (en) * | 2017-12-27 | 2018-07-27 | 中国电子科技集团公司第十八研究所 | A kind of space cover glass graded index anti-reflection film and preparation method thereof |
| CN112666646A (en) * | 2020-12-15 | 2021-04-16 | 兰州空间技术物理研究所 | Anti-static ultraviolet reflecting film and preparation method thereof |
| CN112666644A (en) * | 2020-12-15 | 2021-04-16 | 兰州空间技术物理研究所 | Anti-static ultralow-absorption solar spectrum reflector and preparation method thereof |
| CN113896929A (en) * | 2021-10-13 | 2022-01-07 | 北京博瑞原子空间能源科技有限公司 | Flexible glass and preparation method and application thereof |
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| CN1580823A (en) * | 2003-08-01 | 2005-02-16 | 默克专利股份有限公司 | Optical layer system having antireflection properties |
| US20160027938A1 (en) * | 2014-07-23 | 2016-01-28 | The Regents Of The University Of Michigan | Tetradymite Layer Assisted Heteroepitaxial Growth And Applications |
| CN105293953A (en) * | 2015-11-23 | 2016-02-03 | 云南汇恒光电技术有限公司 | Ultraviolet protective lens and preparation method |
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| CN1580823A (en) * | 2003-08-01 | 2005-02-16 | 默克专利股份有限公司 | Optical layer system having antireflection properties |
| US20160027938A1 (en) * | 2014-07-23 | 2016-01-28 | The Regents Of The University Of Michigan | Tetradymite Layer Assisted Heteroepitaxial Growth And Applications |
| CN105293953A (en) * | 2015-11-23 | 2016-02-03 | 云南汇恒光电技术有限公司 | Ultraviolet protective lens and preparation method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108333647A (en) * | 2017-12-27 | 2018-07-27 | 中国电子科技集团公司第十八研究所 | A kind of space cover glass graded index anti-reflection film and preparation method thereof |
| CN112666646A (en) * | 2020-12-15 | 2021-04-16 | 兰州空间技术物理研究所 | Anti-static ultraviolet reflecting film and preparation method thereof |
| CN112666644A (en) * | 2020-12-15 | 2021-04-16 | 兰州空间技术物理研究所 | Anti-static ultralow-absorption solar spectrum reflector and preparation method thereof |
| CN113896929A (en) * | 2021-10-13 | 2022-01-07 | 北京博瑞原子空间能源科技有限公司 | Flexible glass and preparation method and application thereof |
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