CN106684158A - High power generation efficiency space solar cell structure - Google Patents
High power generation efficiency space solar cell structure Download PDFInfo
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- CN106684158A CN106684158A CN201510759760.5A CN201510759760A CN106684158A CN 106684158 A CN106684158 A CN 106684158A CN 201510759760 A CN201510759760 A CN 201510759760A CN 106684158 A CN106684158 A CN 106684158A
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- Prior art keywords
- solar cell
- refractive index
- antireflective coating
- space use
- film
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- 238000010248 power generation Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 239000006117 anti-reflective coating Substances 0.000 claims description 29
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 27
- 230000008859 change Effects 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims description 3
- 238000004804 winding Methods 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 238000010884 ion-beam technique Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 210000004027 cell Anatomy 0.000 abstract description 29
- 238000001228 spectrum Methods 0.000 abstract description 5
- 238000002310 reflectometry Methods 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 230000009466 transformation Effects 0.000 description 7
- 238000001659 ion-beam spectroscopy Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 230000009102 absorption Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a space solar cell structure. The structure is characterized by coating an improved reflective film on an antireflection film position of an existing space solar cell surface, wherein a refractive index of the improved antireflection film is gradually changed to 0 from a refractive index ns of a substrate. Compared to the antireflection film of the existing space solar cell, by using the structure of the invention, the refractive index of the antireflection film in the solar cell structure is gradually changed to the refractive index of the substrate from approximate 0 of space so that reflection among different materials does not exist and complete permeation of a solar spectrum can be realized; and a theoretical value of reflectivity of a full spectrum segment is 0 so that complete sunlight absorption is realized.
Description
Technical field
The invention belongs to Space power sources utilize technical field, specifically, the present invention relates to a kind of high generating
The battery structure that the solar battery structure of efficiency, particularly space solar are utilized.
Background technology
Existing solar cell for space use mainly has silicon solar cell, unijunction gallium arsenide solar cell, three knot arsenic
Change gallium solar cell and multijunction gallium arsenide solar cell etc..
Because silicon and unijunction gallium arsenide solar cell can only absorb the sunshine of special spectrum scope, its conversion
It is inefficient.Therefore, it is prepared into multijunction solar cell with III-V races material of different band gap widths. allow
Its respectively selectively absorb and change solar spectrum different from domain, so as to increase substantially solar cell
Photoelectric transformation efficiency.
Three-junction gallium arsenide solar battery is the major cell primitive of current space solar battery array, and it is by pushing up
Battery, middle battery and bottom battery composition, using GaInP2, the vertical series windings of GaAs, Ge tri- pn-junction
To solar energy carrying out opto-electronic conversion respectively, structure is referring to Fig. 1.Respectively to 300nm～660nm,
660nm～900nm, the light of 900nm～1800nm wave bands are absorbed, and three sub- batteries pass through tunnel junctions
Series connection, photoelectric transformation efficiency can reach more than 40% 28% or so.By the arsenic of more knots
Gallium solar cell is connected, and can obtain more preferable photoelectric transformation efficiency.
However, there is cost intensive, photoelectric transformation efficiency in three-junction gallium arsenide solar battery of the prior art
The key issue such as have much room for improvement.For this purpose, GalnP can be passed through2The optimization of top battery structure, middle son electricity
The performance improvement in pond, improve Lattice Matching, tunnelling node structure optimization design, antireflective between battery material
The measure of five aspects such as film design optimization is solving the problems, such as photoelectric transformation efficiency.
Meanwhile, with the rising of temperature, the efficiency of three-junction gallium arsenide solar battery there is also certain decline,
It has been generally acknowledged that its temperature coefficient is -0.29%W/ DEG C.
Therefore, the performance that raising subtracts transmitting film is to improve three-junction gallium arsenide solar battery photoelectric transformation efficiency
Important channel.
Generally, the design of antireflective coating be according to film interference principle, using relevant computing formula, it is determined that
The thickness and refractive index of suitable antireflective coating, then looks for phase according to the refractive index that theory analysis is obtained
Whether the antireflection film material answered, also need to consider material absorptivity enough when selecting antireflection film material
Little, the physics and chemical property whether feasibility of stable and preparation technology finally recycles selected material
Material parameter reuses theoretical model carries out calculation optimization thickness.
The antireflective coating of space three-junction gallium arsenide solar battery typically adopts double-layer reflection-decreasing membrane system, i.e. profit
With two kinds of high low-index materials, preparing antireflective coating, its spectral reflectivity leads to such as TiOx/SiOx
Often can meet between 400nm～900nm less than 5%, 3% is smaller than between 500nm～800nm.Subtract
The wave band relative narrower of reflection, its spectrogram is referring to Fig. 2.
As can be seen here, the generating efficiency of space three-junction gallium arsenide solar battery of the prior art is subject to anti-reflection
The narrow restriction of film wave band is penetrated, luminous efficiency is low, for this reason, it is necessary to seek the technological means that solves to carry
High its generating efficiency.
The content of the invention
In consideration of it, it is an object of the invention to provide a kind of solar cell for space use structure, the battery structure profit
The antireflective coating of Traditional Space solar battery surface is substituted with a kind of film of ad hoc structure, it is right to obtain
The more efficient utilization of sunshine, improves the photoelectric transformation efficiency of solar cell.
The present invention is achieved through the following technical solutions.
A kind of solar cell for space use structure, it is characterised in that in the anti-reflection on existing solar cell for space use surface
Penetrate on film location and be coated with a kind of improved antireflective coating, the refractive index of the improved antireflective coating is from substrate
Refractive index nsTaper to 0.
Wherein, existing solar cell for space use include silicon solar cell, unijunction gallium arsenide solar cell, three
Junction gallium arsenide solar battery and multijunction gallium arsenide solar cell.
Wherein, existing solar cell for space use be three-junction gallium arsenide solar battery, it include push up battery, in
Battery and bottom battery, using the pn-junction of tri- vertical series windings of GaInP2, GaAs, Ge to respectively to the sun
Opto-electronic conversion can be carried out, in three-junction gallium arsenide solar battery, the refractive index of its antireflective coating is from base material
The refractive index of AlInP tapers to 0.
Wherein, antireflective coating selects a kind of Coating Materials by preparing on base material, its folding
Rate is penetrated for n1, it is desirable to meet n1>ns(refractive index of substrate), when angle of inclination is θ1When, preparation
The refractive index of film is ns, using electron beam evaporation or the method for ion beam sputtering, by controlling film
Angle of deposit from θ1To 90 degree, then the refractive index of film is from nsGradually become 0.
Wherein, antireflective coating, from a pure metals, is passed through one by preparing on base material
Quantitative reacting gas so as to react during film is prepared, generates sull, from
And change refractive index, while preparing the angle of deposition to realize the change of film consistency.
Further, simple substance material is obtained using methods such as reactive magnetron sputtering, ion beam sputtering reactions
The oxide antireflective coating of material, its refractive index is changed to from substrate refractive index and is approximately spatial refractive index 0.
Wherein, antireflective coating is prepared by the method for etching, and one layer and base material are first prepared in substrate
Refractive index identical uniform film layer, by surface physics etching or chemical etching, makes the consistency of superficial layer
Gradually change, spatial refractive index 0 is changed to by substrate refractive index so as to reach refractive index.
The antireflective coating of relatively existing solar cell for space use, the anti-reflection in the solar battery structure of the present invention
The refractive index for penetrating film is similar to 0 refractive index for tapering to substrate from space, so as to there is no difference
The reflection of storeroom, it is possible to achieve solar spectrum completely through in the theoretical value of the reflectivity of full spectral coverage
For 0, that is, realize whole absorptions of sunshine.
Description of the drawings
Fig. 1 is three-junction gallium arsenide solar battery structural representation of the prior art；
Fig. 2 is three-junction gallium arsenide solar battery antireflective coating reflectance spectrum figure in prior art；
Fig. 3 is new antireflective coating variations in refractive index in three-junction gallium arsenide solar battery structure of the invention
Schematic diagram；
Fig. 4 is new antireflective in the three-junction gallium arsenide solar battery structure in an embodiment of the present invention
The structural representation of film.
Specific embodiment
The solar cell for space use structure of the present invention is further described below in conjunction with the accompanying drawings, the explanation is only
Only it is exemplary, it is no intended to limit the scope of the invention.
In following implementation process accompanying drawing is combined to of the invention special by taking three-junction gallium arsenide solar cell for space use as an example
Profit is described in detail.
The present invention replaces traditional individual layer, double-deck or three layers of antireflection film layer using new antireflection film layer
Form the solar cell for space use structure of high generation efficiency.Wherein, new antireflective coating is with solar cell
Surface (by taking three-junction gallium arsenide solar battery as an example, then AlInP base materials) is coated with for base material
's.Assume that base material refractive index under vacuo is ns, then a kind of antireflective coating is prepared on its surface,
Make its refractive index from the refractive index of base material by nsGradually it is reduced to the refractive index 0 for being similar to space.Example
Such as referring to Fig. 3, Fig. 3 is new antireflective coating folding in three-junction gallium arsenide solar battery structure of the invention
Rate change schematic diagram is penetrated, as can be seen from Fig., with the increase of antireflective coating thickness, refractive index is from base
The ns of material is dull to be reduced, and is gradually lowered to 0.
In order to obtain above-mentioned antireflective coating, can be using following several specific preparation methods：
Method one：A kind of medium Coating Materials (zirconium oxide, hafnium oxide etc.), its refractive index is selected to be
n1, it is desirable to meet n1>ns.When angle of inclination is θ1When, the refractive index of the film of preparation is ns.Utilize
Electron beam evaporation or the method for ion beam sputtering, by controlling the angle of deposit of film from θ1To 90
Degree, then the refractive index of film is from nsGradually become 0.
Method two：From a kind of pure metals (aluminium, zirconium, hafnium, silicon etc.), a certain amount of reaction is passed through
Gas, such as oxygen, nitrogen so as to react during film is prepared, generate a kind of oxidation
Thing or nitride film, so as to change refractive index, while the angle of deposition can be prepared to realize film
The change of consistency.Such as obtain simple substance using reactive magnetron sputtering, ion beam sputtering reaction method
The oxide or nitride antireflective coating of material, its refractive index is changed to from substrate refractive index and is approximately space
Refractive index 0.
Method three：Using the method for physical etchings.Prepare one layer first in substrate to reflect with base material
Rate identical uniform film layer, by the way that in surface physics etching or chemical etching, the consistency for making superficial layer is sent out
Life is gradually changed, and spatial refractive index 0 is changed to by substrate refractive index so as to reach refractive index.For example, see
Fig. 4, is n in refractive indexsSubstrate on prepare upper certain thickness refractive index and be similarly nsFilm layer,
Its physical pattern is set to form needle pattern structure by laser ablation, then it is with the change of film thickness, folding
Rate is penetrated by nsIt is gradually varied to 0.
Although giving detailed description to the specific embodiment of the present invention above and illustrating, should refer to
Bright, we can carry out various equivalent changes to above-mentioned embodiment and repair according to the conception of the present invention
Change, the function produced by it still without departing from specification and accompanying drawing covered it is spiritual when, all should this
Within the protection domain of invention.
Claims (9)
1. a kind of solar cell for space use structure, it is characterised in that on existing solar cell for space use surface
It is coated with a kind of antireflective coating on antireflective coating position, the refractive index of the refractive index of the antireflective coating from substrate
Ns tapers to 0.
2. solar cell for space use structure as claimed in claim 1, wherein, existing space sun electricity
Pond includes silicon solar cell, unijunction gallium arsenide solar cell, three-junction gallium arsenide solar battery and ties arsenic more
Change gallium solar cell.
3. solar cell for space use structure as claimed in claim 2, wherein, existing space sun electricity
Pond is three-junction gallium arsenide solar battery, and it includes pushing up battery, middle battery and bottom battery, using GaInP2、
The pn-junction of the vertical series windings of GaAs, Ge tri- ties arsenic to solar energy carrying out opto-electronic conversion respectively three
In gallium solar cell, the refractive index of its antireflective coating tapers to 0 from the refractive index of base material AlInP.
4. solar cell for space use structure as claimed in claim 1, wherein, antireflective coating be by
Prepare on base material, select a Coating Materials, its refractive index is n1, it is desirable to meet n1>ns, when
Angle of inclination is θ1When, the refractive index of the film of preparation is ns, using electron beam evaporation or ion beam
The method of sputtering, by controlling the angle of deposit of film from θ1To 90 degree, then the refractive index of film from
nsGradually become 0.
5. solar cell for space use structure as claimed in claim 1, wherein, Coating Materials is zirconium oxide
Or hafnium oxide.
6. solar cell for space use structure as claimed in claim 1, wherein, antireflective coating be by
Prepare on base material, from a pure metals, be passed through a certain amount of reacting gas so as to preparing
React during film, sull is generated, so as to change refractive index, while preparing
The angle of deposition is realizing the change of film consistency.
7. solar cell for space use structure as claimed in claim 6, wherein, pure metals be aluminium, zirconium,
Hafnium or silicon.
8. solar cell for space use structure as claimed in claim 6, using reactive magnetron sputtering, ion
Obtaining the oxide antireflective coating of pure metals, its refractive index is reflected beam sputtering reaction method from substrate
Rate nsChange to and be approximately spatial refractive index 0.
9. solar cell for space use structure as claimed in claim 1, wherein, antireflective coating is by etching
Method prepare, first prepare in substrate one layer with base material refractive index identical uniform film layer, pass through
Surface physics is etched or chemical etching, and the consistency for making superficial layer is gradually changed, so as to reach refraction
Rate changes to spatial refractive index 0 by substrate refractive index.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510759760.5A CN106684158A (en) | 2015-11-10 | 2015-11-10 | High power generation efficiency space solar cell structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510759760.5A CN106684158A (en) | 2015-11-10 | 2015-11-10 | High power generation efficiency space solar cell structure |
Publications (1)
| Publication Number | Publication Date |
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| CN106684158A true CN106684158A (en) | 2017-05-17 |
Family
ID=58863683
Family Applications (1)
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| CN201510759760.5A Pending CN106684158A (en) | 2015-11-10 | 2015-11-10 | High power generation efficiency space solar cell structure |
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| CN101499493A (en) * | 2009-02-23 | 2009-08-05 | 东南大学 | Three-junction solar cell |
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| CN102148286A (en) * | 2011-01-10 | 2011-08-10 | 东华大学 | Preparation method for light anti-reflection protective film of space solar cell |
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-
2015
- 2015-11-10 CN CN201510759760.5A patent/CN106684158A/en active Pending
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| CN1752275A (en) * | 2005-10-21 | 2006-03-29 | 中国科学院上海光学精密机械研究所 | The preparation method of wide spectrum dimmer reflecting film |
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