CN106683976B - Single-photon source based on single trapped ion - Google Patents
Single-photon source based on single trapped ion Download PDFInfo
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- CN106683976B CN106683976B CN201710043857.5A CN201710043857A CN106683976B CN 106683976 B CN106683976 B CN 106683976B CN 201710043857 A CN201710043857 A CN 201710043857A CN 106683976 B CN106683976 B CN 106683976B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/02—Details, e.g. electrode, gas filling, shape of vessel
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/70—Photonic quantum communication
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Abstract
The invention discloses the single-photon source based on single trapped ion, including vacuum chamber, ion trap chip and calcium atom stove, ion trap chip includes mixing arsenic silicon chip, first silicon dioxide layer and the second silicon dioxide layer, mix and be provided with substrate through-hole on arsenic silicon chip, the relative side wall of substrate through-hole is respectively arranged with optical fiber fixing groove, two multimode fibres of common optical axis are respectively arranged with two optical fiber fixing grooves, the relative end face of two multimode fibres is concave surface, the surface of concave surface sets deielectric-coating, the focus of the concave surface of two multimode fibres overlaps, optical microcavity is formed between the concave surface of two multimode fibres, the present invention realizes the Doppler cooling of single ion.Single-photon source has very high generation efficiency.It is easy to be connected with existing optical communication system.The single photon line width of preparation is set to reach the natural width of ion energy level transition.
Description
Technical field
The present invention relates to quantum information processing technology field, and in particular to the single-photon source based on single trapped ion, can
To produce the device of single photon output, single photon delivery efficiency is improved, and has narrowed single photon line width, improves quantum communications
Transmission range, and improve the security of quantum communications.
Background technology
Quantum Properties have the function of uniqueness in message area, are improving arithmetic speed, it is ensured that information security, increase letter
Breath capacity and improve accuracy of detection etc. and may break through the limit of existing classical information system, be then just born one it is new
Subject branch --- quantum information science.It is the product that quantum mechanics is combined with information science, including：Quantum cryptography, amount
Son communication, quantum calculation and quantum measurement etc., in recent years, has been achieved for important breakthrough theoretical and experimental, causes various countries
The great attention of government, scientific and technological circle and information industry circle.People increasingly believe firmly that quantum information science is the development of information science
New principle and method have been started, great potential will have been given play in 21 century, and wherein quantum cryptography is in quantum information science
One of critically important application field.By the security of quantum cryptography is ensured by principle of quantum mechanics, be measured can perceive and
Nonclonability ensure that what quantum cryptography will not leave no trace is ravesdropping, therefore be very safe.
Single-photon source refers to only launch the light source of a photon in the same time, is quantum cryptology, quantum communications and
The perfect light source of quantum calculation.How the single-photon source of an ideal stability is found for current quantum cryptology, quantum communications
Research with quantum calculation is that a needs urgently solve the problems, such as.The single-photon light source being widely used at present is by coherent light arteries and veins
Punching decays to averagely each pulse and there was only 0.1 photon, real by such decay approach due to the Poisson distribution feature of photon
In existing single-photon source, the probability in individual pulse in the presence of 2 photons still be can not ignore, so this is a kind of approximate monochromatic light
Component, its efficiency is low, has both influenceed the transmission range of quantum key, influences its security again.Therefore real single-photon source is developed
As a critical problem of quantum cryptography research.
One effective quantum communication data transfer rate and the method for signal to noise ratio of improving is exactly to use the single-photon source of radical sign, not only
Improve the repetition rate of whole system and improve the probability that each trigger pulse includes single photon.Approach generally has
It is following several：
1st, using quantum dot, although the single photon as caused by quantum dot has been used for demonstrating quantum-key distribution experiment and produced
The photon pair of polarization-entangled, but because this technical requirements are less than 10K temperature, and the wavelength of produced entangled photons is not
It is adjustable, in addition, this photon is efficiently relatively difficult with Single-Mode Fiber Coupling.
2nd, using the parametric down conversion process based on crystal second order nonlinear effect Quantum Correlation photon pair, relatively come
Say, it is fairly simple on this method and technology.The key index for describing this single-photon source is exactly to announce efficiency H, its physical significance
It is that twin photon appears in the probability of idle optical band when a photon occurs in flashlight wave band.However, due to pattern match
The reason for, when this photon is efficiently coupled with single-mode fiber, there is also technical difficulty.Current this single-photon source
Declaration efficiency comparison it is low, when especially bandwidth is less than 1nm, at present H value be less than 0.5.
3rd, using the monatomic or molecule for being trapped in high-fineness intracavitary, can be produced from this engineering philosophy non-
Very close to the single photon of perfect condition.
The content of the invention
The purpose of the present invention is in view of the above-mentioned problems existing in the prior art, there is provided the single photon based on single trapped ion
Source, meet the needs of quantum communications and quantum calculation.The fluorescence sent using the single ion of imprison is exported to produce single photon,
The line width of its single-photon source is very narrow, and the single photon that can ensure to export is preferable single photon.Quantum can be increased to lead to
The transmission range of letter and the security for improving communication, at the same can increase in terms of quantum calculation quantum state fidelity and
Coherence time.
The above-mentioned purpose of the present invention is achieved through the following technical solutions：
Based on the single-photon source of single trapped ion, including vacuum chamber, in addition to the ion trap core being arranged in vacuum chamber
Piece and calcium atom stove, ion trap chip include mixing arsenic silicon chip and are separately positioned on the first silica for mixing arsenic silicon chip two sides
Layer and the second silicon dioxide layer, mix and substrate through-hole are provided with arsenic silicon chip, in relative two side wall of substrate through-hole respectively
Optical fiber fixing groove is provided with, two multimode fibres, the opposite end of two multimode fibres are respectively arranged with two optical fiber fixing grooves
Common optical axis, the relative end face of two multimode fibres is concave surface, and the focus of the concave surface of two multimode fibres overlaps, two multimode light
Optical microcavity is formed between fine concave surface, the focus of optical microcavity overlaps with the focus of the concave surface of two multimode fibres,
Part in first silicon dioxide layer positioned at substrate through-hole offers the first silicon dioxide layer through hole, the second titanium dioxide
Part on silicon layer positioned at substrate through-hole offers the second silicon dioxide layer through hole,
It is provided with first silicon dioxide layer and the second silicon dioxide layer for forming DC control electricity in optical microcavity
DC electrode, in optical microcavity formed radio frequency imprison electric field radio-frequency electrode and for the shape in optical microcavity
Into the micromotion compensating electrode of DC control compensating electric field.
Micromotion compensating electrode and DC electrode as described above are 10, and radio-frequency electrode is 2,5 DC electrodes
The side of the first silicon dioxide layer through hole is arranged on, 5 micromotion compensating electrodes and 1 radio-frequency electrode are arranged on the first titanium dioxide
The opposite side of silicon layer through hole, in addition 5 DC electrodes be arranged on the side of the second silicon dioxide layer through hole, 5 micromotions in addition
Compensating electrode and other 1 radio-frequency electrode are arranged on the opposite side of the second silicon dioxide layer through hole, the first silicon dioxide layer through hole
Side 5 DC electrodes and the second silicon dioxide layer through hole side 5 DC electrodes respectively positioned at optical microcavity
Both sides.
The cross section of first silicon dioxide layer through hole as described above and the second silicon dioxide layer through hole is less than substrate through-hole
Cross section.
Ion trap chip as described above is fixed in the chip putting hole in filter circuit plate, and filter circuit plate is fixed on
On wafer support frame, calcium atom stove is fixed on wafer support frame, and wafer support frame is fixed in direct current feedthrough, filter circuit plate
On be provided with the passive RC filter circuits of single order and radio-frequency wires, DC electrode and micromotion compensating electrode pass through the passive RC of single order
Filter circuit is connected with direct current feedthrough, and radio-frequency electrode is led to by radio-frequency wires with radio-frequency feed to be connect, two multimode fibres respectively with
Optical fiber feed-through connects.
The CF35 of the first CF35 interfaces~the 8th is evenly arranged with vacuum chamber as described above along same circumferential spread to connect
Mouthful, the first CF100 interfaces and the 2nd CF100 interfaces are additionally provided with vacuum chamber, is provided with the first CF35 interfaces for incidence
Photo-ionisation laser and cooling laser arrive the thang-kng window of the focus of optical microcavity, are provided with the 3rd CF35 interfaces for incident list
Photon produces the thang-kng window that laser arrives the focus of optical microcavity, and installation is led to respectively on the 5th CF35 interfaces and the 7th CF35 interfaces
Light window, optical fiber feed-through is respectively mounted on the 4th CF35 interfaces and the 8th CF35 interfaces, radio-frequency feed is installed on the 2nd CF35 interfaces
Logical, the 6th CF35 interfaces are connected with ionic pump, sublimation pump and vacuum corner valve respectively by 4 logical vacuum couplings.
The present invention has the advantages that relative to prior art：
1st, single ion of the invention imprison system using the semiconductor microactuator processing technology of standard realize ion trap processing and
The making of optical microcavity, ion trap have a pair of radio-frequency electrodes, five pairs of DC control electrodes and five pairs of micromotion compensating electrodes,
The coupling of ion and optical microcavity, and the accurate micromotion compensation of three-dimensional can be accurately controlled in one-dimensional square, is realized
The Doppler cooling of single ion.
2nd, single ion of the invention imprisons system when exporting single photon, and cooling down laser by 397nm and 866nm will be single
Ion is cooled to Doppler, closes 397nm laser, opens 732nm laser, realizes by 4S1/2State is to 4P1/2State it is continuous
Pumping, so as to continuously export 397nm single photons, it is coupled to optical fiber output in the presence of optical microcavity and single ion；In monochromatic light
Pump light (732nm and 866nm) wavelength is different from flashlight (397nm) wavelength when source works, and avoids due to pump light and letter
The problem of number identical and caused single photon of light frequency is impure, while continuous pumping and optical microcavity coupling output are realized, it is single
Photon source has very high generation efficiency.
3rd, the single photon output of the single-photon source of the invention based on single trapped ion is coupled using multimode fibre
Output, it is easy to be connected with existing optical communication system.
4th, when single photon exports, the single ion of imprison is cooled the single-photon source of the invention based on single trapped ion
To Doppler, the monochromatic light sub-line for due to the effect of single photon frequency bandspread caused by ion warm-up movement, making preparation is eliminated
Width reaches the natural width of ion energy level transition, is the perfect single-photon source of remote quantum communications.
Brief description of the drawings
Fig. 1 is the cross-sectional view of the vacuum chamber of the present invention.
Fig. 2 is the overall structure diagram of the present invention.
Fig. 3 a are the mounting structure schematic diagram of the filter circuit plate of the present invention.
Fig. 3 b are the floor map of the ion trap chip of the present invention.
Fig. 3 c are the mounting structure schematic diagram of the ion trap chip of the present invention.
Fig. 3 d are the structural representation of the optical fiber fixing groove of the present invention.
Fig. 3 e are the enlarged diagram in A portions in Fig. 3 d.
Fig. 4 is the dimensional structure diagram of the ion trap chip of the present invention.
Fig. 5 is the calcium ion level structure schematic diagram of the present invention.
Fig. 6 is the principle schematic of the present invention.
In figure：1- photo-ionisation laser and cooling laser；2- radio frequency feedthroughs；3- multimode fibres；4- single photons produce laser；5-
Thang-kng window；6- optical fiber feed-throughs；7- vacuum pipe connectors；8- vacuum chambers；9- ion trap chips；10- sublimation pumps；11- ions
Pump；12- direct current feedthroughs；13- wafer support framves；14- calcium atom stoves；15- filter circuit plates；16- filter capacitors；17- filtered electricals
Resistance；18- DC electrodes；19- radio-frequency electrodes；20- optical fiber fixing grooves；21- optical microcavities；22- calcium ions；23- vacuum corner valves；
24-4 leads to vacuum coupling；25- micromotion compensating electrodes；26- the first silicon dioxide layer through holes；27- substrate through-holes；28- second
Silicon dioxide layer through hole；29- chip putting holes；30- mixes arsenic silicon chip；The silicon dioxide layers of 31- first；The silica of 32- second
Layer.
Embodiment
Technical scheme is further described below in conjunction with accompanying drawing：
Based on the single-photon source of single trapped ion, including vacuum chamber 8, in addition to the ion trap being arranged in vacuum chamber 8
Chip 9 and calcium atom stove 14, ion trap chip 9 include mixing that arsenic silicon chip 30 and being separately positioned on mixes the two sides of arsenic silicon chip 30
One silicon dioxide layer 31 and the second silicon dioxide layer 32, mix and substrate through-hole 27 are provided with arsenic silicon chip 30, substrate through-hole 27
Optical fiber fixing groove 20 is respectively arranged with two relative side walls, two multimode light are respectively arranged with two optical fiber fixing grooves 20
Fibre 3, the opposite end common optical axis of two multimode fibres 3, the relative end face of two multimode fibres 3 is concave surface, and the surface of concave surface is set
Deielectric-coating is put, the focus of the concave surface of two multimode fibres is overlapped, and optical microcavity 21, light are formed between the concave surface of two multimode fibres
The focus for learning microcavity 21 overlaps with the focus of the concave surface of two multimode fibres,
Part in first silicon dioxide layer 31 positioned at substrate through-hole 27 offers the first silicon dioxide layer through hole 26, the
Part in two silicon dioxide layers 32 positioned at substrate through-hole 27 offers the second silicon dioxide layer through hole 28,
It is provided with first silicon dioxide layer 31 and the second silicon dioxide layer 32 for forming direct current in optical microcavity 21
Control the DC electrode 18 of electric field, the radio-frequency electrode 19 for forming radio frequency imprison electric field in the optical microcavity 21 and for
The micromotion compensating electrode 25 of DC control compensating electric field is formed in optical microcavity 21.
The CF35 interfaces of the first CF35 interfaces~the 8th are evenly arranged with along same circumferential spread, on vacuum chamber 8 on vacuum chamber 8
Be additionally provided with the first CF100 interfaces and the 2nd CF100 interfaces, be provided with the first CF35 interfaces for incident photo-ionisation laser and
The thang-kng window 5 that laser arrives the focus of optical microcavity 21 is cooled down, is provided with the 3rd CF35 interfaces for the generation of incident single photon
Laser installs thang-kng window on the 5th CF35 interfaces and the 7th CF35 interfaces respectively to the thang-kng window 5 of the focus of optical microcavity 21
Mouthfuls 5, optical fiber feed-through 6 is respectively mounted on the 4th CF35 interfaces and the 8th CF35 interfaces, and radio frequency feedthrough is installed on the 2nd CF35 interfaces
2, the 6th CF35 interfaces are connected with ionic pump 11, sublimation pump 10 and vacuum corner valve 23 respectively by 4 logical vacuum couplings 24.
As a kind of preferred scheme, as shown in Fig. 2 vacuum chamber 8 by ionic pump 11 and sublimation pump 10 by vacuum chamber 8
Vacuum maintains 1.0 × 10-8Pa or so.Vacuum chamber 8 is in 10 face body structures, is uniformly divided along same circumferential spread on vacuum chamber 8
The center in 8 faces of cloth is respectively arranged with 8 CF35 interfaces, sets and respectively is the first CF35 along circumferential spread direction and connects
Mouth, the 2nd CF35 interfaces, the 3rd CF35 interfaces, the 4th CF35 interfaces, the 5th CF35 interfaces, the 6th CF35 interfaces, the 7th CF35
Interface and the 8th CF35 interfaces (in fig. 2, top for the first CF35 interfaces, be followed successively by clockwise along circumferential spread
One~the 8th CF35), the center of circle of circumferential spread and the center concurrent of vacuum chamber 8, wherein the first CF35 interfaces central point and the 5th
The line of CF35 interface central points crosses the center of circle of circumferential spread and is located at vertical direction, and the first CF35 interfaces are located at top, and the 5th
CF35 interfaces are located at bottom, and the line of the 3rd CF35 interfaces central point and the 7th CF35 interface central points crosses the center of circle of circumferential spread
And perpendicular to the first CF35 interfaces central point and the line of the 5th CF35 interface central points, the 2nd CF35 interfaces central point and
The line of six CF35 interface central points cross the center of circle of circumferential spread and with the first CF35 interfaces central point and the 5th CF35 interfaces
The line of heart point is in 45 degree of angles, and the line of the 4th CF35 interfaces central point and the 8th CF35 interface central points crosses the circle of circumferential spread
The heart and be in 45 degree of angles with the line of the first CF35 interfaces central point and the 5th CF35 interface central points, two other face of vacuum chamber 8
It is respectively arranged with the first CF100 interfaces and the 2nd CF100 interfaces, the line of the first CF100 interfaces and the 2nd CF100 interfaces hangs down
Directly in circumferential spread.First CF100 interfaces install the direct current feedthrough 12 of 25 cores, and the 2nd CF100 interfaces are mounted with to be used to detect prisoner
Prohibit the detection window that ion sends fluorescence.
It is mounted with to use respectively on the first CF35 interfaces and the 5th CF35 interfaces, the 3rd CF35 interfaces and the 7th CF35 interfaces
In the thang-kng window 5 of laser thang-kng, the thang-kng window 5 on the first CF35 interfaces is used for photo-ionisation laser and cooling laser
1 input, thang-kng window 5 on the 3rd CF35 interfaces are used for the input that single photon produces laser, in the 4th CF35 interfaces and
Optical fiber feed-through 6 is respectively mounted on 8th CF35 interfaces, the single photon output coupled for optical microcavity 21, on the 2nd CF35 interfaces
Radio frequency feedthrough 2 is mounted with, for connecting the radio-frequency electrode 19 of ion trap chip 9, the 6th CF35 interfaces and 4 logical vacuum couplings 24
It is connected.
Ion trap chip 9 is fixed in the chip putting hole 29 in filter circuit plate 15, and filter circuit plate 15 is fixed on core
On piece support frame 13, calcium atom stove 14 is fixed on wafer support frame 13, and wafer support frame 13 is fixed in direct current feedthrough 12,
The passive RC filter circuits of single order and radio-frequency wires, DC electrode 18 and micromotion compensating electrode 25 are provided with filter circuit plate 15
It is connected by the passive RC filter circuits of single order with direct current feedthrough 12, radio-frequency electrode 19 is connected by radio-frequency wires and radio frequency feedthrough 2
Connect, two multimode fibres are connected with optical fiber feed-through 6 respectively.
As a kind of preferred scheme, as shown in Figure 3 a, ion trap chip 9 is fixed in filter circuit plate 15 by vacuum glue
Chip putting hole 29 in, filter circuit plate 15 utilizes M3 stainless steel spiral shell by a diameter of 3 millimeters of aperture on 4 angles
Nail is connected with wafer support frame 13, and wafer support frame 13 is fixed in direct current feedthrough 12, and calcium original is fixed with wafer support frame 13
Sub- stove 14.
As a kind of preferred scheme, as shown in Figure 3 b, the passive RC filtering of single order is provided with described filter circuit plate 15
Circuit, the passive RC filter circuits of single order include filter capacitor 16 and filter resistance 17, and the capacitance of filter capacitor 16 is 820pF, filter
The resistance of ripple resistance 17 is 240 Ω, and the corner frequency of the passive RC filter circuits of single order is 810KHz.The size of filter circuit plate 15
For 60mm × 50mm × 1.6mm, center is provided with the chip putting hole 29 for placing ion trap chip 9, and chip putting hole 29 is
Step-like through hole, one end size of chip putting hole 29 are 7mm × 9mm × 0.8mm, the size of the other end of chip putting hole 29
For 5mm × 7mm × 0.8mm.
As a kind of preferred scheme, as shown in Figure 3 d, ion trap chip 9 is step-like, the chi of the one side of ion trap chip 9
Very little is 5mm × 7mm, and the size of the another side of ion trap chip 9 is 7mm × 9mm, is that arsenic silicon is mixed in 330 μm of twin polishings by thickness
Substrate forms the first silicon dioxide layer that thickness is 15 μm and the respectively by thermal oxide, mixing the top surface of arsenic silicon chip and bottom surface
Two silicon dioxide layers.In ion-beam cleaning region, by etching, substrate through-hole 27 is formed on arsenic silicon chip is mixed, in the first dioxy
The first silicon dioxide layer through hole 26 is offered on SiClx layer, the second silicon dioxide layer through hole is offered in the second silicon dioxide layer
28, the cross section of the first silicon dioxide layer through hole 26 and the second silicon dioxide layer through hole 28 is less than the cross section of substrate through-hole 27.
The preferable length × width × height of substrate through-hole 27 is 2.84mm × 330 μm of 640 μ m, the first silicon dioxide layer through hole 26 and second
The length × width × height of silicon dioxide layer through hole 28 is 2.54mm × 15 μm of 340 μ m, the first silicon dioxide layer through hole 26, second
Silicon dioxide layer through hole 28, the central axis of substrate through-hole 27 are conllinear, and the first silicon dioxide layer through hole 26, the second silica
Layer through hole 28, the length direction of substrate through-hole 27 are consistent,
Micromotion compensating electrode 25 and DC electrode 18 are 10, and radio-frequency electrode 19 is 2, and 5 DC electrodes 18 are set
Put and be arranged on first in the side of the first silicon dioxide layer through hole 26,5 micromotion compensating electrodes 25 and 1 radio-frequency electrode 19
The opposite side of silicon dioxide layer through hole 26, in addition 5 DC electrodes 18 be arranged on the side of the second silicon dioxide layer through hole 28,
Other 5 micromotion compensating electrodes 25 and other 1 radio-frequency electrode 19 are arranged on the another of the second silicon dioxide layer through hole 28
Side, the 5 of the side of the silicon dioxide layer through hole 28 of 5 DC electrodes 18 and second of the side of the first silicon dioxide layer through hole 26
Individual DC electrode 18 is located at the both sides of optical microcavity 21 respectively.
As a kind of preferred scheme, pass through hot evaporation and plating in the first silicon dioxide layer and the second silica layer surface
Mode forms 5 micron thickness layer gold electrodes, and these layer gold electrodes include 10 DC electrodes, 18,2 radio-frequency electrodes 19 and 10
The width of 25,10 DC electrodes 18 of micromotion compensating electrode and 10 micromotion compensating electrodes 25 is 340 μm, 2 radio frequencies
The width of electrode 19 is 50 μm.There is the side that 5 DC electrodes 18 are arranged at the first silicon dioxide layer through hole 26, and 5 are micro-
Motion compensation electrode 25 and 1 radio-frequency electrode 19 are arranged at the opposite side of the first silicon dioxide layer through hole 26, in addition 5 direct currents
Pole 18 is in the side of the second silicon dioxide layer through hole 28, in addition 5 micromotion compensating electrodes 25 and other 1 radio-frequency electrode 19
Opposite side in the second silicon dioxide layer through hole 28, above-mentioned 10 DC electrodes 18 are divided to is located at substrate through-hole respectively for two parts
Between radio-frequency electrode 19 and micromotion compensating electrode 25 in 27 both sides, the first silicon dioxide layer or the second silicon dioxide layer
Spacing is 50 μm.The spacing between DC electrode 18 in first silicon dioxide layer or the second silicon dioxide layer is 10 μm, first
The spacing between micromotion compensating electrode 25 in silicon dioxide layer or the second silicon dioxide layer is 10 μm.Arsenic silicon chip is mixed in addition
Both sides on 9 positioned at substrate through-hole 27 have etched long 3.18mm respectively, wide 200 μm, deep 900 μm optical fiber fixing groove 20, two
The length direction of optical fiber fixing groove 20 is vertical with the length direction of substrate through-hole 27 and is located along the same line, and two optical fiber are fixed
Two root multimode fibers are placed in groove 20 respectively.The chip that ion trap chip 9 is adhesive in the center of filter circuit 15 by vacuum is placed
On hole 29, each DC electrode 18 of ion trap chip 9 and each micromotion compensating electrode 25 pass through a diameter of 25.4 μm of gold
Line is connected with passive RC filter circuits one end of a single order in filter circuit plate 15 respectively.The filter of the passive RC filter circuits of single order
The capacitance of ripple electric capacity 16 is 820pF, and the resistance of filter resistance 17 is 240 Ω, and its corner frequency is 810KHz.The passive RC filters of single order
The wave circuit other end is connected in direct current feedthrough 12 by vacuum wire, and direct current feedthrough 12 is connected with direct voltage source.Ion trap
Each radio-frequency electrode 19 of chip 9 respectively passes through the radio-frequency wires on a diameter of 25.4 μm of gold thread and filter circuit plate 15
One end connect, then the radio-frequency wires other end is connected in radio frequency feedthrough 13 by vacuum wire, radio frequency feedthrough 13 then again with
Radio frequency source is connected.
The core diameter of two root multimode fibers 3 is 200 μm, and the relative end face of two multimode fibres 3 is heated by laser
Method to form radius of curvature be 320 μm of concave surface, and the surface of concave surface is coated with the deielectric-coating that 397nm reflectivity is 99%.
As shown in figure 4, multimode fibre 3 is fixed in optical fiber fixing groove 20 by insulating heat-conductive viscose glue N353ND, two multimode fibres 3
Two concave surfaces are staggered relatively, and the groove of the edge of the concave surface of multimode fibre 3 and optical fiber fixing groove is along concordant, two multimode fibres
The focus of concave surface overlap, optical microcavity 21 is just formed between the concave surface of two such multimode fibre, the focus of optical microcavity 21 is
For the focus of the concave surface of two multimode fibres, the optical axis coincidence of the concave surface of two multimode fibres and as the light of optical microcavity 21
Axle, pass through optical microcavity 21 from the incident photo-ionisation laser of the vertical direction of thang-kng window 5 of the first CF35 interfaces and cooling laser
Focus, the single photon incident from the horizontal directions of thang-kng window 5 of the 3rd CF35 interfaces produce laser by optical microcavity 21
Focus, the optical axis of optical microcavity 21, single photon generation laser, vertical direction are vertical two-by-two, the fineness F=of its optical microcavity 21
312.The calcium ion 22 being held in captivity is in the center of optical microcavity 21.The other end of two multimode fibres is the SMA of standard
Joint, the SMA joints of the standard of two multimode fibres are connected respectively to what is installed on the 4th CF35 interfaces and the 8th CF35 interfaces
Optical fiber feed-through 6.
As shown in figure 5, single-photon source laser pump (ing) generation process of this embodiment based on single trapped ion is as follows：
Step 1, calcium atom steam is produced to the electrified regulation of calcium atom stove 14, calcium atom stove 14, calcium atom steam is diffused into
In optical microcavity 21；
Step 2, from the incident photo-ionisation laser of thang-kng window 5 (vertical direction) of the first CF35 interfaces (423nm and
375nm) and cooling laser (397nm and 866nm) arrives optical microcavity 21, and photo-ionisation laser is with calcium atom interaction, producing
Monovalence calcium ion (40Ca+)；
Step 3, radio frequency source are 15MHz~30MHz in 2 loading frequency scopes of radio-frequency electrode 19, and peak scope in peak is
100Vp-p~400Vp-pVoltage.The DC voltage range that direct voltage source loads on DC electrode 18 is 20V~60V.
In optical microcavity in the presence of DC control electric field caused by radio frequency imprison electric field caused by radio-frequency electrode 19 and DC electrode 18
Imprison field is produced in 21, caused monovalence calcium ion is trapped in imprison field.The monovalence calcium ion being held in captivity is in the first CF35
Under incident cooling laser (the 397nm and 866nm) effect of the thang-kng window 5 (vertical direction) of interface, while by adjusting micro- fortune
DC voltage on dynamic compensating electrode 25, and then the compensating direct current control electric field being carried in optical microcavity 21 is adjusted, by monovalence
Monovalence calcium ion and is cooled to below 5mK by regulation of calcium to the focal point of optical microcavity 21.
Step 4, close and swash from the incident photo-ionisation laser of the thang-kng window 5 (vertical direction) of the first CF35 interfaces and cooling
Light, single photon is produced into laser (732nm and 866nm) and incided by the 3rd CF35 interfaces in optical microcavity 21, the one of imprison
It is 397nm single photons that valency calcium ion spontaneous radiation, which goes out wavelength, wavelength be 397nm single photons in the presence of optical microcavity, pass through
Multimode fibre coupling output.
Single photon prepared by above-mentioned steps is after Doppler effect is eliminated, and is narrowed natural width to ion, i.e.,
Line width is the narrow line width single photon source of order of megahertz, and it is applied to remote quantum communications.
Specific embodiment described herein is only to spirit explanation for example of the invention.Technology belonging to the present invention is led
The technical staff in domain can be made various modifications or supplement to described specific embodiment or be replaced using similar mode
Generation, but without departing from the spiritual of the present invention or surmount scope defined in appended claims.
Claims (1)
1. the single-photon source production method based on single trapped ion, using the single-photon source based on single trapped ion, is based on
The single-photon source of single trapped ion includes vacuum chamber (8), it is characterised in that the single-photon source based on single trapped ion also wraps
The ion trap chip (9) and calcium atom stove (14) being arranged in vacuum chamber (8) are included, ion trap chip (9) includes mixing arsenic silicon chip
(30) and the first silicon dioxide layer (31) and the second silicon dioxide layer (32) for mixing arsenic silicon chip (30) two sides are separately positioned on, mixed
Substrate through-hole (27) is provided with arsenic silicon chip (30), optical fiber is respectively arranged with relative two side wall of substrate through-hole (27)
Fixing groove (20), two optical fiber fixing grooves (20) are interior to be respectively arranged with two multimode fibres (3), the phase of two multimode fibres (3)
Opposite end common optical axis, the relative end face of two multimode fibres (3) is concave surface, and the focus of the concave surface of two multimode fibres overlaps, two
Optical microcavity (21), the focus of optical microcavity (21) and the concave surface of two multimode fibres are formed between the concave surface of individual multimode fibre
Focus overlaps,
Part in first silicon dioxide layer (31) positioned at substrate through-hole (27) offers the first silicon dioxide layer through hole (26), the
Part in two silicon dioxide layers (32) positioned at substrate through-hole (27) offers the second silicon dioxide layer through hole (28),
It is provided with first silicon dioxide layer (31) and the second silicon dioxide layer (32) straight for being formed in optical microcavity (21)
The DC electrode (18) of flow control electric field, for the radio-frequency electrode (19) of radio frequency imprison electric field is formed in the optical microcavity (21) with
And for forming the micromotion compensating electrode (25) of DC control compensating electric field in optical microcavity (21),
Micromotion compensating electrode (25) and DC electrode (18) are 10, and radio-frequency electrode (19) is 2,5 DC electrodes
(18) side of the first silicon dioxide layer through hole (26), 5 micromotion compensating electrodes (25) and 1 radio-frequency electrode (19) are arranged on
Another offside of the first silicon dioxide layer through hole (26) is arranged on, 5 DC electrodes (18) are arranged on the second silica in addition
The side of layer through hole (28), 5 micromotion compensating electrodes (25) and other 1 radio-frequency electrode (19) are arranged on the second dioxy in addition
Another offside of SiClx layer through hole (28), 5 DC electrodes (18) of the side of the first silicon dioxide layer through hole (26) and second
5 DC electrodes (18) of the side of silicon dioxide layer through hole (28) are located at the both sides of optical microcavity (21) respectively,
The cross section of first silicon dioxide layer through hole (26) and the second silicon dioxide layer through hole (28) is less than substrate through-hole (27)
Cross section,
Ion trap chip (9) is fixed on the chip putting hole (29) in filter circuit plate (15) Nei, and filter circuit plate (15) is fixed
On wafer support frame (13), calcium atom stove (14) is fixed on wafer support frame (13), and wafer support frame (13) is fixed on directly
Flow in feedthrough (12), the passive RC filter circuits of single order and radio-frequency wires, DC electrode (18) are provided with filter circuit plate (15)
It is connected with micromotion compensating electrode (25) by the passive RC filter circuits of single order with direct current feedthrough (12), radio-frequency electrode (19) is logical
Radio-frequency wires to be crossed to be connected with radio frequency feedthrough (2), two multimode fibres are connected with optical fiber feed-through (6) respectively,
The CF35 interfaces of the first CF35 interfaces~the 8th are evenly arranged with along same circumferential spread, on vacuum chamber (8) on vacuum chamber (8)
Be additionally provided with the first CF100 interfaces and the 2nd CF100 interfaces, be provided with the first CF35 interfaces for incident photo-ionisation laser and
Laser is cooled down to the thang-kng window (5) of the focus of optical microcavity (21), is provided with for incident single photon on the 3rd CF35 interfaces
Laser is produced to the thang-kng window (5) of the focus of optical microcavity (21), is pacified respectively on the 5th CF35 interfaces and the 7th CF35 interfaces
Thang-kng window (5) is filled, optical fiber feed-through (6) is respectively mounted on the 4th CF35 interfaces and the 8th CF35 interfaces, on the 2nd CF35 interfaces
Radio frequency feedthrough (2) is installed, the 6th CF35 interfaces by 4 logical vacuum couplings (24) respectively with ionic pump (11), sublimation pump (10)
Connected with vacuum corner valve (23),
Concretely comprise the following steps：
Step 1, calcium atom steam is produced to calcium atom stove (14) electrified regulation, calcium atom stove (14), calcium atom steam is diffused into
In optical microcavity (21)；
Step 2, the incident photo-ionisation laser of thang-kng window (5) and cooling laser to optical microcavity (21) from the first CF35 interfaces,
Photo-ionisation laser is with calcium atom interaction, producing monovalence calcium ion, the wavelength of photo-ionisation laser is 423nm and 375nm, cold
But the wavelength of laser is 397nm and 866nm；
Step 3, radio frequency source are 15MHz~30MHz in 2 radio-frequency electrode (19) loading frequency scopes, and peak scope in peak is 100Vp-p
~400Vp-pVoltage, the DC voltage range that direct voltage source loads on DC electrode (18) is 20V~60V, in radio frequency
In optical microcavity in the presence of DC control electric field caused by radio frequency imprison electric field caused by electrode (19) and DC electrode (18)
(21) imprison field is produced in, caused monovalence calcium ion is trapped in imprison field, and the monovalence calcium ion being held in captivity is first
Under the incident cooling laser action of the thang-kng window (5) of CF35 interfaces, while by adjusting on micromotion compensating electrode (25)
DC voltage, and then the compensating direct current control electric field being carried in optical microcavity (21) is adjusted, by monovalence regulation of calcium to light
The focal point of microcavity (21) is learned, and monovalence calcium ion is cooled to below 5mK,
Step 4, close from the incident photo-ionisation laser of the thang-kng window (5) of the first CF35 interfaces and cooling laser, by single photon
Laser is produced to incide in optical microcavity (21) by the 3rd CF35 interfaces, single photon produce the wavelength of laser for 732nm and
866nm, it is 397nm single photons that the monovalence calcium ion spontaneous radiation of imprison, which goes out wavelength, and wavelength is 397nm single photons in optical microcavity
In the presence of, coupled and exported by multimode fibre.
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| US10755913B2 (en) | 2017-07-18 | 2020-08-25 | Duke University | Package comprising an ion-trap and method of fabrication |
| CN110828022B (en) * | 2018-08-14 | 2021-11-19 | 华为技术有限公司 | Ion optical cavity coupling system and method |
| CN111383870B (en) * | 2018-12-28 | 2021-08-13 | 华为技术有限公司 | Ion trap system |
| CN109814049B (en) * | 2019-03-15 | 2024-02-27 | 中国科学院精密测量科学与技术创新研究院 | Based on 43 Ca + Device and method for measuring weak high-frequency alternating magnetic field by ions |
| CN113970662B (en) * | 2021-10-19 | 2023-05-16 | 中山大学 | Electric field force detection system based on single trapping ions |
| CN116227610B (en) * | 2023-05-08 | 2023-07-25 | 国仪量子(合肥)技术有限公司 | Ion trap system, electric field compensation method thereof and ion trap quantum computer |
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