CN106683976A - Single photon source based on single trapped ion - Google Patents
Single photon source based on single trapped ion Download PDFInfo
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- CN106683976A CN106683976A CN201710043857.5A CN201710043857A CN106683976A CN 106683976 A CN106683976 A CN 106683976A CN 201710043857 A CN201710043857 A CN 201710043857A CN 106683976 A CN106683976 A CN 106683976A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/02—Details, e.g. electrode, gas filling, shape of vessel
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/70—Photonic quantum communication
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Abstract
The present invention discloses a single photon source based on a single trapped ion. The source comprises a vacuum chamber, an ion trap chip and a calcium atomic furnace. The ion trap chip comprises an arsenic silicate substrate, a first silicon dioxide layer and a second silicon dioxide layer. The arseno silicate substrate is provided with a substrate through hole, the opposite side walls of the substrate through hole are respectively provided with fiber fixing grooves, the two fiber fixing grooves are respectively provided with two multimode fibers having the same optical axis, the opposite end surfaces of the two multimode fibers are concave surfaces, the surfaces of the concave surfaces are provided with dielectric films, the focal points of the concave surfaces of the two multimode fibers are overlapped, and an optical microcavity is formed between the concave surfaces of the two multimode fibers. The single photon source based on the single trapped ion realizes the Doppler limitation cooling of the single ion. The single photon source has higher generation efficiency and facilitates the connection with the current optical communication system to allow the prepared single photon line width to reach the natural line width of ion energy level transition.
Description
Technical field
The present invention relates to quantum information processing technology field, and in particular to the single-photon source based on single trapped ion, can
To produce the device of single photon output, single photon delivery efficiency is improve, and narrowed single photon live width, improve quantum communications
Transmission range, and improve the safety of quantum communications.
Background technology
Quantum Properties have the function of uniqueness in message area, are improving arithmetic speed, it is ensured that information security, increase letter
Breath capacity and improve the aspect such as accuracy of detection may the existing classical information system of breakthrough the limit, be then just born one it is new
Subject branch --- quantum information science.It is product of the quantum mechanics in combination with information science, including：Quantum cryptography, amount
Son communication, quantum calculation and quantum measurement etc., in recent years, theoretical and experimental important breakthrough is had been achieved for, and causes various countries
The great attention of government, scientific and technological circle and information industry circle.People increasingly believe firmly that quantum information science is the development of information science
New principle and method is started, great potential will have been given play in 21 century, and wherein quantum cryptography is in quantum information science
One of critically important application.Because the safety of quantum cryptography is ensured by principle of quantum mechanics, it is measured perceive and
Nonclonability ensure that what quantum cryptography will not leave no trace is ravesdropping, therefore be very safe.
Single-photon source to refer to and only launch the light source of a photon in the same time, is quantum cryptology, quantum communications and
The perfect light source of quantum calculation.How the single-photon source of an ideal stability is found for current quantum cryptology, quantum communications
Being one with the research of quantum calculation needs the urgent problem for solving.The single-photon light source being widely used at present is by coherent light arteries and veins
Punching decays to average each pulse and there was only 0.1 photon, due to the Poisson distribution feature of photon, by such decay approach reality
In existing single-photon source, the probability that there are 2 photons in individual pulse still be can not ignore, so this is a kind of approximate monochromatic light
Component, its efficiency is low, has both affected the transmission range of quantum key, and its safety is affected again.Therefore real single-photon source is developed
Become a critical problem of quantum cryptography research.
It is exactly the single-photon source for adopting radical sign that one is effectively improved quantum communication data transfer rate and the method for signal to noise ratio, not only
Improve the repetition rate of whole system and improve probability of each trigger pulse comprising single photon.Approach generally has
It is following several：
1st, quantum dot is utilized, although the single photon produced by quantum dot has been used for demonstrating quantum-key distribution experiment and producing polarizing
The photon pair for tangling, but the temperature due to this technical requirements less than 10K, and the wavelength of produced entangled photons can not
Adjust, additionally, this photon is efficiently relatively difficult with Single-Mode Fiber Coupling.
2nd, the photon pair of the Quantum Correlation based on the parametric down conversion process of crystal second order nonlinear effect is utilized, is come relatively
Say, it is fairly simple on this method and technology.The key index for describing this single-photon source is exactly to announce efficiency H, its physical significance
It is a light period of the day from 11 p.m. to 1 a.m occur in flashlight wave band, twin photon occurs in the probability of idle optical band.However, due to pattern match
The reason for, when this photon is efficiently coupled with single-mode fiber, there is also technical difficulty.Current this single-photon source
Declaration efficiency comparison it is low, when especially bandwidth is less than 1nm, the value of current H is less than 0.5.
3rd, using being trapped in the monatomic or molecule of high-fineness intracavity, in this engineering philosophy for can produce it is non-
Very close to the single photon of perfect condition.
The content of the invention
The purpose of the present invention is the problems referred to above existed for prior art, there is provided the single photon based on single trapped ion
Source, meets the needs of quantum communications and quantum calculation.Single photon output is produced using the fluorescence that sends of single ion of imprison,
The live width of its single-photon source is very narrow, and can ensure that output single photon be preferable single photon.Quantum can be increased to lead to
The transmission range of letter and improve the safety of communication, at the same can increase in terms of quantum calculation quantum state fidelity and
Coherence time.
The above-mentioned purpose of the present invention is achieved through the following technical solutions：
Based on the single-photon source of single trapped ion, including vacuum chamber, also including the ion trap chip being arranged in vacuum room and
Calcium atom stove, ion trap chip include ginseng arsenic silicon chip and be separately positioned on ginseng arsenic silicon chip two sides the first silicon dioxide layer and
Second silicon dioxide layer, on ginseng arsenic silicon chip substrate through-hole is provided with, and is respectively provided with the relative two side wall of substrate through-hole
There is optical fiber fixing groove, two multimode fibres, the common light in opposite end of two multimode fibres are respectively arranged with two optical fiber fixing grooves
Axle, the relative end face of two multimode fibres is concave surface, and the focus of the concave surface of two multimode fibres overlaps, two multimode fibres
Optical microcavity is formed between concave surface, the focus of optical microcavity overlaps with the focus of the concave surface of two multimode fibres,
Part in first silicon dioxide layer positioned at substrate through-hole offers the first silicon dioxide layer through hole, the second silicon dioxide layer
The upper part positioned at substrate through-hole offers the second silicon dioxide layer through hole,
It is provided with first silicon dioxide layer and the second silicon dioxide layer for forming DC control electric field in optical microcavity
DC electrode, the radio-frequency electrode for forming radio frequency imprison electric field in optical microcavity and for forming straight in optical microcavity
The micromotion compensating electrode of flow control compensating electric field.
Micromotion compensating electrode as above and DC electrode are 10, and radio-frequency electrode is 2,5 DC electrode
The side of the first silicon dioxide layer through hole is arranged on, 5 micromotion compensating electrodes and 1 radio-frequency electrode are arranged on the first titanium dioxide
The opposite side of silicon layer through hole, in addition 5 DC electrode be arranged on the side of the second silicon dioxide layer through hole, 5 micromotions in addition
Compensating electrode and other 1 radio-frequency electrode are arranged on the opposite side of the second silicon dioxide layer through hole, the first silicon dioxide layer through hole
Side 5 DC electrode and the second silicon dioxide layer through hole side 5 DC electrode respectively positioned at optical microcavity
Both sides.
The cross section of the first silicon dioxide layer through hole as above and the second silicon dioxide layer through hole is less than substrate through-hole
Cross section.
Ion trap chip as above is fixed in the chip putting hole in filter circuit plate, and filter circuit plate is fixed on
On wafer support frame, calcium atom stove is fixed on wafer support frame, and wafer support frame is fixed in direct current feedthrough, filter circuit plate
On be provided with the passive RC filter circuits of single order and radio-frequency wires, DC electrode and micromotion compensating electrode pass through the passive RC of single order
Filter circuit is connected with direct current feedthrough, and radio-frequency electrode is led to radio-frequency feed by radio-frequency wires and connect, two multimode fibres respectively with
Optical fiber feed-through connects.
A CF35 interfaces~the 8th CF35 interfaces are evenly arranged with along same circumferential spread on vacuum chamber as above,
A CF100 interfaces and the 2nd CF100 interfaces are additionally provided with vacuum chamber, are provided with for incident photoelectricity on a CF35 interfaces
From laser and cooling laser to the thang-kng window of the focus of optical microcavity, it is provided with for incident single photon on the 3rd CF35 interfaces
Laser is produced to the thang-kng window of the focus of optical microcavity, on the 5th CF35 interfaces and the 7th CF35 interfaces thang-kng window is respectively mounted
Mouthful, optical fiber feed-through is respectively mounted on the 4th CF35 interfaces and the 8th CF35 interfaces, radio frequency feedthrough is installed on the 2nd CF35 interfaces, the
Six CF35 interfaces are connected respectively by 4 logical vacuum couplings with ionic pump, sublimation pump and vacuum corner valve.
The present invention has the advantages that relative to prior art：
1st, single ion of the invention imprison system realizes processing and the optics of ion trap using the semiconductor microactuator processing technique of standard
The making of microcavity, ion trap has a pair of radio-frequency electrodes, five pairs of DC control electrodes and five pairs of micromotion compensating electrodes, one-dimensional
Can be with the coupling of precise control ion and optical microcavity on direction, and the accurate micromotion of three-dimensional is compensated, and is realized single
The Doppler cooling of ion.
2nd, when single photon is exported, cooling down laser by 397nm and 866nm will be single for single ion of the invention imprison system
Ion is cooled to Doppler, closes 397nm laser, opens 732nm laser, realizes by 4S1/2State is to 4P1/2The continuous pump of state
Pu, so as to continuously export 397nm single photons, in the presence of optical microcavity and single ion optical fiber output is coupled to；In single light source
During work pump light (732nm and 866nm) wavelength is different from flashlight (397nm) wavelength, it is to avoid due to pump light and signal
The impure problem of single photon that light frequency is identical and produces, while realizing continuous pumping and optical microcavity coupling output, monochromatic light
Component has very high generation efficiency.
3rd, single photon output of the present invention based on the single-photon source of single trapped ion is coupled using multimode fibre
Output, it is easy to be connected with existing optical communication system.
4th, when single photon is exported, the single ion of imprison is cooled single-photon source of the present invention based on single trapped ion
To Doppler, the effect of the single photon frequency bandspread produced due to ion warm-up movement is eliminated, make the monochromatic light sub-line of preparation
Width reaches the natural width of ion energy level transition, is the perfect single-photon source of remote quantum communications.
Description of the drawings
Fig. 1 is the cross-sectional view of the vacuum chamber of the present invention.
Fig. 2 is the overall structure diagram of the present invention.
Fig. 3 a are the mounting structure schematic diagram of the filter circuit plate of the present invention.
Fig. 3 b are the floor map of the ion trap chip of the present invention.
Fig. 3 c are the mounting structure schematic diagram of the ion trap chip of the present invention.
Fig. 3 d are the structural representation of the optical fiber fixing groove of the present invention.
Fig. 3 e are the enlarged diagram in A portions in Fig. 3 d.
Fig. 4 is the dimensional structure diagram of the ion trap chip of the present invention.
Fig. 5 is the calcium ion level structure schematic diagram of the present invention.
Fig. 6 is the principle schematic of the present invention.
In figure：1- photo-ionisation laser and cooling laser；2- radio frequency feedthroughs；3- multimode fibres；4- single photons produce laser；5-
Thang-kng window；6- optical fiber feed-throughs；7- vacuum pipe adapters；8- vacuum chambers；9- ion trap chips；10- sublimation pumps；11- ions
Pump；12- direct current feedthroughs；13- wafer support framves；14- calcium atom stoves；15- filter circuit plates；16- filter capacitors；17- filtered electricals
Resistance；18- DC electrode；19- radio-frequency electrodes；20- optical fiber fixing grooves；21- optical microcavities；22- calcium ions；23- vacuum corner valves；
24-4 leads to vacuum coupling；25- micromotion compensating electrodes；26- the first silicon dioxide layer through holes；27- substrate through-holes；28- second
Silicon dioxide layer through hole；29- chip putting holes；30- joins arsenic silicon chip；The silicon dioxide layers of 31- first；The silicon dioxide of 32- second
Layer.
Specific embodiment
Technical scheme is further described below in conjunction with accompanying drawing：
Based on the single-photon source of single trapped ion, including vacuum chamber 8, also including the ion trap chip 9 being arranged in vacuum chamber 8
With calcium atom stove 14, ion trap chip 9 includes ginseng arsenic silicon chip 30 and is separately positioned on the 1st of the two sides of ginseng arsenic silicon chip 30
The silicon dioxide layer 32 of silicon oxide layer 31 and second, is provided with substrate through-hole 27 on ginseng arsenic silicon chip 30, substrate through-hole 27 it is relative
Two side walls on be respectively arranged with optical fiber fixing groove 20, be respectively arranged with two multimode fibres 3 in two optical fiber fixing grooves 20,
The opposite end common optical axis of two multimode fibres 3, the relative end face of two multimode fibres 3 is concave surface, and the surface of concave surface arranges and is situated between
Plasma membrane, the focus of the concave surface of two multimode fibres overlaps, and optical microcavity 21 is formed between the concave surface of two multimode fibres, and optics is micro-
The focus in chamber 21 overlaps with the focus of the concave surface of two multimode fibres,
Part in first silicon dioxide layer 31 positioned at substrate through-hole 27 offers the first silicon dioxide layer through hole 26, the second dioxy
Part on SiClx layer 32 positioned at substrate through-hole 27 offers the second silicon dioxide layer through hole 28,
It is provided with first silicon dioxide layer 31 and the second silicon dioxide layer 32 for forming DC control in optical microcavity 21
The DC electrode 18 of electric field, the radio-frequency electrode 19 for forming radio frequency imprison electric field in the optical microcavity 21 and in optics
The micromotion compensating electrode 25 of DC control compensating electric field is formed in microcavity 21.
A CF35 interfaces~the 8th CF35 interfaces are evenly arranged with along same circumferential spread on vacuum chamber 8, on vacuum chamber 8
Be additionally provided with a CF100 interfaces and the 2nd CF100 interfaces, be provided with a CF35 interfaces for incident photo-ionisation laser and
Cooling laser is provided with for the generation of incident single photon to the thang-kng window 5 of the focus of optical microcavity 21 on the 3rd CF35 interfaces
Laser is respectively mounted thang-kng window to the thang-kng window 5 of the focus of optical microcavity 21 on the 5th CF35 interfaces and the 7th CF35 interfaces
Mouth 5, on the 4th CF35 interfaces and the 8th CF35 interfaces optical fiber feed-through 6 is respectively mounted, and radio frequency feedthrough is installed on the 2nd CF35 interfaces
2, the 6th CF35 interfaces are connected respectively by 4 logical vacuum couplings 24 with ionic pump 11, sublimation pump 10 and vacuum corner valve 23.
As a kind of preferred version, as shown in Fig. 2 vacuum chamber 8 passes through ionic pump 11 and sublimation pump 10 by vacuum chamber 8
Vacuum maintains 1.0 × 10-8Pa or so.Vacuum chamber 8 is in 10 face body structures, is uniformly divided along same circumferential spread on vacuum chamber 8
The center in 8 faces of cloth is respectively arranged with 8 CF35 interfaces, and setting respectively is a CF35 and connects along circumferential spread direction
Mouth, the 2nd CF35 interfaces, the 3rd CF35 interfaces, the 4th CF35 interfaces, the 5th CF35 interfaces, the 6th CF35 interfaces, the 7th CF35
Interface and the 8th CF35 interfaces（In fig. 2, top for a CF35 interfaces, be followed successively by clockwise along circumferential spread
One~the 8th CF35）, the center of circle of circumferential spread and the center concurrent of vacuum chamber 8, wherein a CF35 interfaces central point and the 5th
The line of CF35 interface central points crosses the center of circle of circumferential spread and positioned at vertical direction, a CF35 interfaces be located at top, the 5th
CF35 interfaces are located at the center of circle that the line of bottom, the 3rd CF35 interfaces central point and the 7th CF35 interface central points crosses circumferential spread
And perpendicular to a CF35 interfaces central point and the line of the 5th CF35 interface central points, the 2nd CF35 interfaces central point and the 6th
The line of CF35 interface central points cross the center of circle of circumferential spread and with a CF35 interfaces central point and the 5th CF35 interfaces center
Line of the line of point in 45 degree of angles, the 4th CF35 interfaces central point and the 8th CF35 interface central points crosses the center of circle of circumferential spread
And with the line of a CF35 interfaces central point and the 5th CF35 interface central points be in 45 degree angles, two other face of vacuum chamber 8 is divided
Be not provided with the line of a CF100 interfaces and the 2nd CF100 interfaces, a CF100 interfaces and the 2nd CF100 interfaces perpendicular to
Circumferential spread.First CF100 interfaces install 25 cores direct current feedthrough 12, the 2nd CF100 interfaces be mounted with for detection imprison from
Son sends the detection window of fluorescence.
Use has been respectively mounted on a CF35 interfaces and the 5th CF35 interfaces, the 3rd CF35 interfaces and the 7th CF35 interfaces
In the thang-kng window 5 of laser thang-kng, the thang-kng window 5 on a CF35 interfaces is used for photo-ionisation laser and cooling laser
1 input, the thang-kng window 5 on the 3rd CF35 interfaces is used for the input that single photon produces laser, in the 4th CF35 interfaces and
Optical fiber feed-through 6 is respectively mounted on 8th CF35 interfaces, for the single photon output of the coupling of optical microcavity 21, on the 2nd CF35 interfaces
Radio frequency feedthrough 2 is mounted with, for connecting the radio-frequency electrode 19 of ion trap chip 9, the 6th CF35 interfaces and 4 logical vacuum couplings 24
It is connected.
Ion trap chip 9 is fixed in the chip putting hole 29 in filter circuit plate 15, and filter circuit plate 15 is fixed on core
On piece bracing frame 13, calcium atom stove 14 is fixed on wafer support frame 13, and wafer support frame 13 is fixed in direct current feedthrough 12, filter
The passive RC filter circuits of single order and radio-frequency wires are provided with wave circuit plate 15, DC electrode 18 and micromotion compensating electrode 25 are equal
It is connected with direct current feedthrough 12 by the passive RC filter circuits of single order, radio-frequency electrode 19 is connected by radio-frequency wires with radio frequency feedthrough 2,
Two multimode fibres are connected respectively with optical fiber feed-through 6.
Used as a kind of preferred version, as shown in Figure 3 a, ion trap chip 9 is fixed in filter circuit plate 15 by vacuum glue
Chip putting hole 29 in, the aperture that filter circuit plate 15 passes through a diameter of 3 millimeters on 4 angles, using the rustless steel spiral shell of M3
Nail is connected with wafer support frame 13, and wafer support frame 13 is fixed in direct current feedthrough 12, calcium is fixed with wafer support frame 13 former
Sub- stove 14.
As a kind of preferred version, as shown in Figure 3 b, the passive RC filtering of single order is provided with described filter circuit plate 15
Circuit, the passive RC filter circuits of single order include filter capacitor 16 and filter resistance 17, and the capacitance of filter capacitor 16 is 820pF, is filtered
The resistance of ripple resistance 17 is 240 Ω, and the corner frequency of the passive RC filter circuits of single order is 810KHz.The size of filter circuit plate 15
For 60mm × 50mm × 1.6mm, center is provided with the chip putting hole 29 for placing ion trap chip 9, and chip putting hole 29 is
Step-like through hole, one end size of chip putting hole 29 is 7mm × 9mm × 0.8mm, and the size of the other end of chip putting hole 29 is
5mm×7mm×0.8mm。
Used as a kind of preferred version, as shown in Figure 3 d, ion trap chip 9 is step-like, the size of the one side of ion trap chip 9
For 5mm × 7mm, the size of the another side of ion trap chip 9 is 7mm × 9mm, by the ginseng arsenic silicon substrate that thickness is 330 μm of twin polishings
Piece forms respectively the first silicon dioxide layer and second that thickness is 15 μm by thermal oxide in the top surface and bottom surface for joining arsenic silicon chip
Silicon dioxide layer.In ion-beam cleaning region, by etching, substrate through-hole 27 is formed on ginseng arsenic silicon chip, in the first titanium dioxide
The first silicon dioxide layer through hole 26 is offered on silicon layer, the second silicon dioxide layer through hole is offered in the second silicon dioxide layer
28, the cross section of the cross section of the first silicon dioxide layer through hole 26 and the second silicon dioxide layer through hole 28 less than substrate through-hole 27.
The preferred length × width × height of substrate through-hole 27 is 330 μm of 2.84mm × 640 μ m, the first silicon dioxide layer through hole 26 and the 2nd 2
The length × width × height of silicon oxide layer through hole 28 is 15 μm of 2.54mm × 340 μ m, the first silicon dioxide layer through hole the 26, the 2nd 2
Silicon oxide layer through hole 28, substrate through-hole 27 central axis it is conllinear, and the first silicon dioxide layer through hole 26, the second silicon dioxide layer
Through hole 28, substrate through-hole 27 length direction it is consistent,
Micromotion compensating electrode 25 and DC electrode 18 are 10, and radio-frequency electrode 19 is 2, and 5 DC electrode 18 are arranged on
The side of the first silicon dioxide layer through hole 26,5 micromotion compensating electrodes 25 and 1 radio-frequency electrode 19 are arranged on the first titanium dioxide
The opposite side of silicon layer through hole 26, in addition 5 DC electrode 18 be arranged on the side of the second silicon dioxide layer through hole 28,5 in addition
Micromotion compensating electrode 25 and other 1 radio-frequency electrode 19 are arranged on the opposite side of the second silicon dioxide layer through hole 28, and the one or two
5 DC electrode of the side of the silicon dioxide layer through hole 28 of 5 DC electrode 18 and second of the side of silicon oxide layer through hole 26
18 respectively positioned at the both sides of optical microcavity 21.
As a kind of preferred version, in the first silicon dioxide layer and the second silicon dioxide layer surface by hot evaporation and plating
Mode forms 5 micron thickness layer gold electrodes, and these layer gold electrodes include 10 DC electrode, 18,2 radio-frequency electrodes 19 and 10
The width of 25,10 DC electrode 18 of micromotion compensating electrode and 10 micromotion compensating electrodes 25 is 340 μm, 2 radio frequencies
The width of electrode 19 is 50 μm.There are 5 DC electrode 18 to be arranged at the side of the first silicon dioxide layer through hole 26, and 5 are micro-
Motion compensation electrode 25 and 1 radio-frequency electrode 19 are arranged at the opposite side of the first silicon dioxide layer through hole 26, in addition 5 unidirectional currents
Pole 18 is in the side of the second silicon dioxide layer through hole 28, in addition 5 micromotion compensating electrodes 25 and other 1 radio-frequency electrode 19
In the opposite side of the second silicon dioxide layer through hole 28,18 points of above-mentioned 10 DC electrode are that two parts are located at respectively substrate through-hole
Between between radio-frequency electrode 19 and micromotion compensating electrode 25 in 27 both sides, the first silicon dioxide layer or the second silicon dioxide layer
Away from for 50 μm.The spacing between DC electrode 18 in first silicon dioxide layer or the second silicon dioxide layer be 10 μm, the one or two
The spacing between micromotion compensating electrode 25 on silicon oxide layer or the second silicon dioxide layer is 10 μm.Join arsenic silicon chip 9 in addition
The upper both sides positioned at substrate through-hole 27 have etched respectively long 3.18mm, wide 200 μm, deep 900 μm optical fiber fixing groove 20, two light
The length direction of fine fixing groove 20 is vertical with the length direction of substrate through-hole 27 and is located along the same line, two optical fiber fixing grooves
Two root multimode fibers are placed respectively in 20.Ion trap chip 9 is adhesive in the chip putting hole at the center of filter circuit 15 by vacuum
On 29, each DC electrode 18 and each micromotion compensating electrode 25 of ion trap chip 9 pass through a diameter of 25.4 μm of gold thread
It is connected with the passive RC filter circuits one end of a single order in filter circuit plate 15 respectively.The filtering of the passive RC filter circuits of single order
The capacitance of electric capacity 16 is 820pF, and the resistance of filter resistance 17 is 240 Ω, and its corner frequency is 810KHz.The passive RC filtering of single order
The circuit other end is connected in direct current feedthrough 12 by vacuum wire, and direct current feedthrough 12 is connected with direct voltage source.Ion trap core
Each radio-frequency electrode 19 of piece 9 is respectively by the radio-frequency wires one end on a diameter of 25.4 μm of gold thread and filter circuit plate 15
Connection, then the radio-frequency wires other end is connected in radio frequency feedthrough 13 by vacuum wire, radio frequency feedthrough 13 then again with radio frequency
Source is connected.
The core diameter of two root multimode fibers 3 is 200 μm, and the relative end face of two multimode fibres 3 is heated by laser
Method to form radius of curvature be 320 μm of concave surface, and the surface of concave surface is coated with the deielectric-coating that 397nm reflectance is 99%.Such as
Shown in Fig. 4, multimode fibre 3 is fixed in optical fiber fixing groove 20 by insulating heat-conductive viscose glue N353ND, and the two of two multimode fibres 3
Individual concave surface is staggered relatively, and the edge of the concave surface of multimode fibre 3 and the groove of optical fiber fixing groove are along concordant, two multimode fibres
The focus of concave surface overlaps, and optical microcavity 21 is just formed between the concave surface of two such multimode fibre, and the focus of optical microcavity 21 is
The focus of the concave surface of two multimode fibres, the optical axis coincidence of the concave surface of two multimode fibres and as the optical axis of optical microcavity 21,
From the incident photo-ionisation laser of the vertical direction of thang-kng window 5 of a CF35 interfaces and cooling laser through optical microcavity 21 Jiao
Point, from the incident single photon of the horizontal direction of thang-kng window 5 of the 3rd CF35 interfaces focus of the laser through optical microcavity 21 is produced,
The optical axis of optical microcavity 21, single photon produce laser, vertical direction two-by-two vertically, fineness F=312 of its optical microcavity 21.Quilt
Center of the calcium ion 22 of imprison in optical microcavity 21.The other end of two multimode fibres is the sub-miniature A connector of standard, two
The sub-miniature A connector of the standard of individual multimode fibre is connected respectively to the optical fiber feed-through installed on the 4th CF35 interfaces and the 8th CF35 interfaces
6。
As shown in figure 5, single-photon source laser pump (ing) generation process of this embodiment based on single trapped ion is as follows：
Step 1, to the electrified regulation of calcium atom stove 14, calcium atom stove 14 produces calcium atom steam, and calcium atom steam is diffused into optics
In microcavity 21；
Step 2, from the thang-kng window 5 of a CF35 interfaces（Vertical direction）Incident photo-ionisation laser (423nm and 375nm) and cold
But laser (397nm and 866nm) arrives optical microcavity 21, under photo-ionisation laser interacts with calcium atom, produces monovalence calcium ion
(40Ca+)；
Step 3, radio frequency source are 15MHz~30MHz in 2 loading frequency scopes of radio-frequency electrode 19, and peak-to-peak scope is 100Vp-p~
400 Vp-pVoltage.The DC voltage range that direct voltage source is loaded in DC electrode 18 is 20V~60V.In radio frequency electrical
In the interior product of optical microcavity 21 in the presence of the radio frequency imprison electric field that pole 19 produces and the DC control electric field that DC electrode 18 is produced
Raw imprison field, the monovalence calcium ion of generation is trapped in imprison field.The monovalence calcium ion being held in captivity is in a CF35 interfaces
Thang-kng window 5（Vertical direction）Under incident cooling laser (397nm and 866nm) effect, while by adjusting micromotion compensation
DC voltage on electrode 25, and then the compensating direct current control electric field being carried in optical microcavity 21 is adjusted, by monovalence calcium ion
The focal point of optical microcavity 21 is adjusted to, and monovalence calcium ion is cooled to into below 5mK.
Step 4, close from the thang-kng window 5 of a CF35 interfaces（Vertical direction）Incident photo-ionisation laser and cooling swashs
Light, by single photon laser is produced（732nm and 866nm）Incided in optical microcavity 21 by the 3rd CF35 interfaces, the one of imprison
It is 397nm single photons that valency calcium ion spontaneous radiation goes out wavelength, and wavelength is 397nm single photons in the presence of optical microcavity, is passed through
Multimode fibre coupling output.
Single photon prepared by above-mentioned steps is after Doppler effect is eliminated, to be narrowed natural width to ion, i.e.,
Live width is the narrow line width single photon source of order of megahertz, and it is applied to remote quantum communications.
Specific embodiment described herein is only explanation for example spiritual to the present invention.Technology neck belonging to of the invention
The technical staff in domain can be made various modifications to described specific embodiment or supplement or replaced using similar mode
Generation, but without departing from the spiritual of the present invention or surmount scope defined in appended claims.
Claims (5)
1. the single-photon source based on single trapped ion, including vacuum chamber（8）, it is characterised in that also including being arranged on vacuum chamber
（8）Interior ion trap chip（9）With calcium atom stove（14）, ion trap chip（9）Including ginseng arsenic silicon chip（30）Be respectively provided with
In ginseng arsenic silicon chip（30）First silicon dioxide layer on two sides（31）With the second silicon dioxide layer（32）, join arsenic silicon chip（30）On
It is provided with substrate through-hole（27）, substrate through-hole（27）Relative two side wall on be respectively arranged with optical fiber fixing groove（20）, two
Individual optical fiber fixing groove（20）Inside it is respectively arranged with two multimode fibres（3）, two multimode fibres（3）Opposite end common optical axis, two
Individual multimode fibre（3）Relative end face be concave surface, the focus of the concave surface of two multimode fibres overlaps, two multimode fibres it is recessed
Optical microcavity is formed between face（21）, optical microcavity（21）Focus overlap with the focus of the concave surface of two multimode fibres,
First silicon dioxide layer（31）It is upper to be located at substrate through-hole（27）Part offer the first silicon dioxide layer through hole（26）, the
Two silicon dioxide layers（32）It is upper to be located at substrate through-hole（27）Part offer the second silicon dioxide layer through hole（28）,
First silicon dioxide layer（31）With the second silicon dioxide layer（32）On be provided with optical microcavity（21）It is interior to form straight
The DC electrode of flow control electric field（18）, in optical microcavity（21）It is interior to form the radio-frequency electrode that radio frequency imprisons electric field（19）With
And in optical microcavity（21）The interior micromotion compensating electrode for forming DC control compensating electric field（25）.
2. the single-photon source based on single trapped ion according to claim 1, it is characterised in that described micromotion is mended
Repay electrode（25）And DC electrode（18）10 are, radio-frequency electrode（19）For 2,5 DC electrode（18）It is arranged on first
Silicon dioxide layer through hole（26）Side, 5 micromotion compensating electrodes（25）With 1 radio-frequency electrode（19）It is arranged on the first dioxy
SiClx layer through hole（26）Opposite side, 5 DC electrode in addition（18）It is arranged on the second silicon dioxide layer through hole（28）Side,
Other 5 micromotion compensating electrodes（25）With other 1 radio-frequency electrode（19）It is arranged on the second silicon dioxide layer through hole（28）'s
Opposite side, the first silicon dioxide layer through hole（26）Side 5 DC electrode（18）With the second silicon dioxide layer through hole（28）
Side 5 DC electrode（18）Optical microcavity is located at respectively（21）Both sides.
3. the single-photon source based on single trapped ion according to claim 1, it is characterised in that the first described dioxy
SiClx layer through hole（26）With the second silicon dioxide layer through hole（28）Cross section be less than substrate through-hole（27）Cross section.
4. the single-photon source based on single trapped ion according to claim 1, it is characterised in that described ion trap core
Piece（9）It is fixed on filter circuit plate（15）On chip putting hole（29）It is interior, filter circuit plate（15）It is fixed on wafer support frame
（13）On, calcium atom stove（14）It is fixed on wafer support frame（13）On, wafer support frame（13）It is fixed on direct current feedthrough（12）On,
Filter circuit plate（15）On be provided with the passive RC filter circuits of single order and radio-frequency wires, DC electrode（18）With micromotion compensation electricity
Pole（25）By the passive RC filter circuits of single order and direct current feedthrough（12）Connection, radio-frequency electrode（19）By radio-frequency wires with penetrate
Frequency feedthrough（2）Connection, two multimode fibres respectively with optical fiber feed-through（6）Connection.
5. the single-photon source based on single trapped ion according to claim 4, it is characterised in that described vacuum chamber
（8）On be evenly arranged with a CF35 interfaces~the 8th CF35 interfaces, vacuum chamber along same circumferential spread（8）On be additionally provided with
One CF100 interfaces and the 2nd CF100 interfaces, are provided with a CF35 interfaces and are arrived for incident photo-ionisation laser and cooling laser
Optical microcavity（21）Focus thang-kng window（5）, it is provided with the 3rd CF35 interfaces and is arrived for incident single photon generation laser
Optical microcavity（21）Focus thang-kng window（5）, on the 5th CF35 interfaces and the 7th CF35 interfaces thang-kng window is respectively mounted
（5）, on the 4th CF35 interfaces and the 8th CF35 interfaces optical fiber feed-through is respectively mounted（6）, radio-frequency feed is installed on the 2nd CF35 interfaces
It is logical（2）, the 6th CF35 interfaces are by 4 logical vacuum couplings（24）Respectively with ionic pump（11）, sublimation pump（10）And vacuum corner valve
（23）Connection.
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