CN106683791B - Method for preparing flexible transparent conductive electrode with multilevel metal grid structure - Google Patents
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- CN106683791B CN106683791B CN201611186137.6A CN201611186137A CN106683791B CN 106683791 B CN106683791 B CN 106683791B CN 201611186137 A CN201611186137 A CN 201611186137A CN 106683791 B CN106683791 B CN 106683791B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 68
- 239000002184 metal Substances 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 30
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 16
- 239000011651 chromium Substances 0.000 claims abstract description 16
- -1 polydimethylsiloxane Polymers 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 238000004528 spin coating Methods 0.000 claims abstract description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 21
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 21
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 15
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 14
- 239000002070 nanowire Substances 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 238000002604 ultrasonography Methods 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- WOZVHXUHUFLZGK-UHFFFAOYSA-N dimethyl terephthalate Chemical group COC(=O)C1=CC=C(C(=O)OC)C=C1 WOZVHXUHUFLZGK-UHFFFAOYSA-N 0.000 claims 1
- 150000003949 imides Chemical class 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 7
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000011160 research Methods 0.000 abstract description 2
- 238000000861 blow drying Methods 0.000 abstract 1
- 239000004205 dimethyl polysiloxane Substances 0.000 abstract 1
- 238000012827 research and development Methods 0.000 abstract 1
- 238000009210 therapy by ultrasound Methods 0.000 abstract 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000001527 near-field phase shift lithography Methods 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 125000005487 naphthalate group Chemical group 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 239000003431 cross linking reagent Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002493 microarray Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Hybrid Cells (AREA)
- Manufacturing Of Electric Cables (AREA)
- Non-Insulated Conductors (AREA)
Abstract
The invention discloses a method for preparing a flexible transparent conductive electrode with a multilevel metal grid structure, which comprises the steps of uniformly spin-coating a photoresist layer on a substrate, carrying out prebaking, sequentially adopting a polydimethylsiloxane seal and a chromium plate as mask plates for exposure, carrying out developing treatment and blow-drying, then depositing a conductive metal layer on the flexible substrate, and finally carrying out ultrasonic treatment to obtain the flexible transparent conductive electrode with the multilevel metal grid structure. The preparation method is simple, and the prepared flexible transparent electrode has a novel structure and excellent performance, can be applied to the research and production of flexible transparent electrodes, and has profound significance for the research and development of flexible electronic devices.
Description
Technical field
The present invention relates to the fields such as flexible electronic, sensing more particularly to photoetching technique to be used for field prepared by transparent electrode,
More particularly to a kind of method for the flexible and transparent conductive electrode for preparing and having multi-level metal network.
Background technology
Flexible transparent electrode is a kind of important component of flexible electronic device.Flexible electronic device includes flexible sends out
Light, flexible display device, flexible solar battery, flexible field-effect transistor, flexible biosensor etc..These are flexible
, wearable electronic device by be next-generation consumer electronics product important form.Occur currently on the market soft
Property printed electronic device R FID, as market is gradually approved and expands, more and more people put into the pass to flexible electronic
Note and research.Photic zone and electrode of the flexible transparent electrode as these flexible electronic devices, flexibility, light transmittance and
Electric conductivity is most important to the overall performance of device.Therefore, a kind of flexible transparent electrode of high quality is developed to flexible electronic
Development, is especially significantly to the application of light-emitting display device and solar cell.
The material for being presently available for preparing transparent electrode is broadly divided into metal grill, metal-oxide film, graphene, carbon
Nanotube, the types such as conducting polymer, by metal grill, metal-oxide film, graphene, the materials such as carbon nanotube are produced on
It can be obtained by flexible transparent electrode in flexible and transparent substrate, transparent substrates include mainly the high scores such as PET, PDMS, polyimides
Sub- material.Metal has natural advantage as electrode as most typical conductive material, high conductivity, therefore, many to study
Personnel are dedicated to studying the preparation that metal material is used for flexible transparent electrode.Due to the opaqueness of metal, metal grill is just
At the most important type of the flexible and transparent conductive electrode based on metal material.Most of transparent electrodes based on metal grill
All it is that the method for silk-screen printing is first used to obtain lattice, redeposited metal obtains.It is screen printed onto photoetching for example, first passing through
Glue-line obtains 5 microns of grid line width, and the pattern that 50 microns of spacing, then deposition is golden on it, is just obtained after stripping
Golden grid, if it is be produced in transparent flexible substrates be exactly flexible and transparent metal electrode.But how further to carry
The electric conductivity and light transmittance of high this electrode are still the important topic of researcher's concern.
Near field photolithography technology based on PDMS microarrays is a kind of novel nanometer that can reach 100 nanometers or less resolution ratio
Patterning techniques, this is technically simple efficiently, of low cost, is not required to large-scale instrument, can be rapid in laboratory, big face
Product, inexpensive obtains nano level pattern, and in micro-nano manufacture, there are many applications in the fields such as biochip.
Expensive equipment and harsh working environment are needed compared to traditional ultraviolet photolithographic technology, used near field photolithography
PDMS making stamps are simple, of low cost, and can be patterned in arbitrary substrate, therefore in organic electronic, printing electricity
Today of son and flexible electronic fast development, near field photolithography technology will play huge effect.The purpose of this patent is to use
Near field photolithography technology prepares a kind of novel structure having multi-level metal network, to improve each of flexible transparent electrode
Item performance.
Invention content
In view of the deficiencies of the prior art, it is prepared with multi-level metal network the purpose of the present invention is to provide a kind of
The method of flexible transparent electrode.Present invention combination near field photolithography technology is easily obtained using metal material, electric property is outstanding, steams
The features such as electroplating method maturation and high quality of materials obtained, a kind of simple for process high-performance flexible transparent electrode for preparing of design
Method.
The purpose of the present invention can be achieved by the following measures：
A method of the flexible and transparent conductive electrode with multi-level metal network being prepared, the uniform spin coating in substrate
Photoresist layer after front baking, then uses dimethyl silicone polymer seal and chromium plate to be exposed as mask plate successively, developed
After handling and drying up, then the conductive metal deposition layer in the flexible substrates, it is finally ultrasonically treated and obtains with multi-level metal
The flexible and transparent conductive electrode of network.
The multi-level metal network is 1-15 microns by line width, the metal grill and line width that 50-300 microns of spacing
It it is 80-400 nanometers, the array of metal lines that spacing is 2-5 microns forms.
The substrate is non-transparent flexible substrate, selected from polyethylene terephthalate (PET), dimethyl silicone polymer
(PDMS) any one and in polyimides etc., preferably polyethylene terephthalate or dimethyl silicone polymer.
The dimethyl silicone polymer seal is dimethyl silicone polymer (PDMS) seal with nano-wire array；Institute
The chromium plate stated is the chromium plate with grid image.Successively using dimethyl silicone polymer (PDMS) seal with nano-wire array
It is exposed as mask plate with the chromium plate with grid image, wherein the size of the nano-wire array of PDMS and chromium plate grid
The size of image in multi-level metal network metal wire and metal grill size it is corresponding.It is described that there is nano-wire array
Dimethyl silicone polymer (PDMS) seal preferably use following methods prepare：Using traditional photoetching technique, by there is lines
The chromium plate of pattern carries out photoetching to oxidation piece substrate, and the silicon chip template of V-type array groove is obtained after wet etching.By poly- two
After methylsiloxane (PDMS) monomer mixes in proportion with crosslinking agent and removes bubble removing, that pours into preparation has V-type array
The silicon chip template of groove, and be heating and curing in an oven, obtain the polydimethylsiloxanes with nano-wire array after removing template
Alkane (PDMS) seal.The mass ratio of dimethyl silicone polymer (PDMS) monomer and crosslinking agent is preferably 10:1.
The conductive metal of the conductive metal layer is at least one in common conductive metal Au, Ag, Cu, Pt, Zn and Fe etc.
Kind, preferably Au, Ag or Cu.Method used by conductive metal deposition is heat sink area method, is well known method in field.
The thickness of the conductive metal layer need to be less than the 1/2 of photoresist layer thickness.
The time of the ultrasound is 1~30min, wherein it is preferred that 3~5min.
Compared with prior art, the present invention has had the advantage that：
First, the only simple a kind of grid of specification line width of traditional flexible transparent electrode based on metal grill, mostly
Number is micron-sized, and light transmittance is different and different with its mesh-density, and prepared by the present invention has multi-level metal grid knot
The novel flexible transparent conductive electrode of structure adds nano level metal wire on the basis of original micro-sized metal grid,
In the case of smaller on the influence of electrode light transmittance, the electric conductivity of electrode is significantly improved.
Secondly, the present invention has used near field photolithography technology to prepare nano level metal wire, is improved in conventional processes,
One-step method, which is made, has both micron order and nano level metal grill, has not only reduced the difficulty for making flexible transparent electrode, but also carry
The high electric conductivity of electrode.
Finally, prepared by the present invention has the flexible transparent electrode of multi-level metal network, and preparation method is simple, prepares
Mild condition has far reaching significance to further exploitation, the popularization of flexible transparent electrode and flexible electronic.
Description of the drawings
Fig. 1 is that PDMS seals is used to carry out showing for photoetching to the substrate for being coated with positive photoetching rubber shipley1805 as mask plate
It is intended to, basal layer herein is PET；
The electron scanning micrograph for the multi-level metal grid that Fig. 2 makes, the material deposited herein are silver；
The electric conductivity comparison diagram of transparent electrode and common metal grill transparent electrode of the Fig. 3 based on multi-level metal grid,
Abscissa indicates；
Fig. 4 is under conditions of 5 microns of grids, 400 nano wires, the visible-range light transmittance of the flexible transparent electrode of preparation
Curve；
The flexible and transparent conductive electrode based on multi-level metal grid that Fig. 5 makes, substrate is PET；
The flexible and transparent conductive electrode for the metal grill that Fig. 6 comparative examples 2 make；
The flexible and transparent conductive electrode for the metal grill that Fig. 7 comparative examples 3 make.
Specific implementation mode
With reference to embodiment, the invention will be further described.
Embodiment 1：Make the PDMS seals with nano-wire array
Using traditional photoetching technique, photoetching, lines spacing 5 are carried out to oxidation piece substrate by the chromium plate for having line image
Micron, can obtain the silicon chip template of V-type array groove after wet etching.
By dimethyl silicone polymer (PDMS) monomer and crosslinking agent (DOW CORNING Sylgard 184) with mass ratio for 10:1
After ratio is uniformly mixed and removes bubble removing, the silicon chip template for having V-type array groove of preparation is poured into, and in 80 DEG C of baking oven
Be heating and curing 4h, and flexible mask version (PDMS seals) (the nano-wire array lines with nano-wire array are obtained after removing template
5 microns of spacing), it is used for the preparation of follow-up nano-pattern.
Embodiment 2：Prepare the flexible transparent electrode for having multi-level metal network：
It is first handled with plasma cleaner and cleans flexible substrates polyethylene terephthalate (PET), poly- to benzene
The photoresist (shipley1805) of 150 nanometer thickness of spin coating utilizes implementation after front baking on naphthalate (PET) film
The PDMS seals prepared in example 1 are 100mw/cm in light intensity2Halogen light source under expose 18s, then carry grid with traditional
The chromium plate of (10 microns of line width, 100 microns of spacing) pattern is in 500mw/cm2Ultraviolet source under expose 40s, then use MF319
Developing liquid developing 23s deposits the silver of 45 nanometer thickness, then ultrasound 5 minutes in acetone in substrate, PET bases can be obtained after drying
Multi-level metal grid transparent electrode (Fig. 2) on bottom, wherein 10 microns of metal grill line width, 100 microns of spacing, metal sodium rice
200 nanometers of linear array line width, 5 microns of line width.It is 9.8 Ω/sq (Fig. 3) to test its sheet resistance with four probe electrode platforms, than traditional
The metal grid electrode of no metal nanometer line array improves 50% or more.Its light transmittance is tested with ultraviolet specrophotometer to exist
Up to 83.1% (Fig. 4) under 550nm wavelength.
Embodiment 3：
It is first handled with plasma cleaner and cleans flexible substrates dimethyl silicone polymer (PDMS), in polydimethylsiloxanes
The photoresist (shipley1805) of 100 nanometer thickness of spin coating utilizes what is prepared in embodiment 1 after front baking on alkane (PDMS) film
PDMS seals are 100mw/cm in light intensity2Halogen light source under expose 20s, then with it is traditional with grid (15 microns of line width,
200 microns of spacing) pattern chromium plate in 500mw/cm2Ultraviolet source under expose 30s, then use MF319 developing liquid developings
18s deposits the silver of 40 nanometer thickness, then ultrasound 4 minutes in acetone in substrate, the multistage in PDMS substrates can be obtained after drying
Metal grill transparent electrode.
Comparative example 1
It is first handled with plasma cleaner and cleans flexible substrates polyethylene terephthalate (PET), poly- to benzene
The photoresist (shipley1805) of 150 nanometer thickness of spin coating on naphthalate (PET) film, after front baking, with traditional
Chromium plate with grid (10 microns of line width, 100 microns of spacing) pattern is in 500mw/cm2Ultraviolet source under expose 40s, then
With MF319 developing liquid developing 23s, the silver of 45 nanometer thickness, then ultrasound 5 minutes in acetone are deposited after drying in substrate, can be obtained
To transparent electrode.It is 21.5 Ω/sq to test its sheet resistance with four probe electrode platforms.
Comparative example 2
It is first handled with plasma cleaner and cleans flexible substrates polyethylene terephthalate (PET), poly- to benzene
The photoresist (shipley1805) of 150 nanometer thickness of spin coating utilizes implementation after front baking on naphthalate (PET) film
The PDMS seals prepared in example 1 expose 18s under the halogen light source that light intensity is, then (line width 10 is micro- with traditional grid that carries
Rice, 100 microns of spacing) pattern chromium plate in 500mw/cm2Ultraviolet source under expose 40s, then use MF319 developing liquid developings
23s deposits the silver of 100 nanometer thickness, then ultrasound 5 minutes in acetone, because there is the metal of great quantities of spare in substrate after drying
It can not be eluted by ultrasound with photoresist, cause electrode transparency very low.As shown in Figure 6.
Comparative example 3
It is first handled with plasma cleaner and cleans flexible substrates polyethylene terephthalate (PET), poly- to benzene
The photoresist (shipley1805) of 150 nanometer thickness of spin coating utilizes implementation after front baking on naphthalate (PET) film
The PDMS seals prepared in example 1 expose 18s under the halogen light source that light intensity is, then (line width 10 is micro- with traditional grid that carries
Rice, 100 microns of spacing) pattern chromium plate in 500mw/cm2Ultraviolet source under expose 40s, then use MF319 developing liquid developings
23s deposits the silver of 45 nanometer thickness, then ultrasound 20 minutes in acetone in substrate, has part metals line to fall off, influence after drying
The electric conductivity of electrode.As shown in Figure 7.
Claims (9)
1. a kind of method preparing the flexible and transparent conductive electrode with multi-level metal network, it is characterised in that：In substrate
Upper uniform spin coating photoresist layer after front baking, then uses dimethyl silicone polymer seal and chromium plate to be carried out as mask plate successively
Exposure, after subjected to development and drying, then the conductive metal deposition layer in the substrate, it is finally ultrasonically treated and obtains with more
The flexible and transparent conductive electrode of grade metal mesh structure；
The multi-level metal network is 1-15 microns by line width, and the metal grill and line width that 50-300 microns of spacing are
80-400 nanometers, the array of metal lines that spacing is 2-5 microns forms.
2. the method according to claim 1 for preparing the flexible and transparent conductive electrode with multi-level metal network,
It is characterized in that：The substrate is non-transparent flexible substrate, selected from polyethylene terephthalate, dimethyl silicone polymer and is gathered
Any one in acid imide.
3. the method according to claim 2 for preparing the flexible and transparent conductive electrode with multi-level metal network,
It is characterized in that：The substrate is polyethylene terephthalate or dimethyl silicone polymer.
4. the method according to claim 1 for preparing the flexible and transparent conductive electrode with multi-level metal network,
It is characterized in that：The dimethyl silicone polymer seal is the dimethyl silicone polymer seal with nano-wire array；Described
Chromium plate is the chromium plate with grid image.
5. the method according to claim 1 for preparing the flexible and transparent conductive electrode with multi-level metal network,
It is characterized in that：The conductive metal of the conductive metal layer is at least one of Au, Ag, Cu, Pt, Zn and Fe.
6. the method according to claim 5 for preparing the flexible and transparent conductive electrode with multi-level metal network,
It is characterized in that：The conductive metal of the conductive metal layer is Au, Ag or Cu.
7. the method according to claim 1 for preparing the flexible and transparent conductive electrode with multi-level metal network,
It is characterized in that：The thickness of the conductive metal layer need to be less than the 1/2 of the photoresist layer thickness.
8. the method according to claim 1 for preparing the flexible and transparent conductive electrode with multi-level metal network,
It is characterized in that：The time of the ultrasound is 1 ~ 30 min.
9. the method according to claim 8 for preparing the flexible and transparent conductive electrode with multi-level metal network,
It is characterized in that：The time of the ultrasound is 3 ~ 5 min.
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| CN108565214B (en) * | 2018-04-09 | 2020-09-25 | 大连理工大学 | Method for preparing silicon groove by PDMS masking technology |
| CN109686699B (en) * | 2018-12-25 | 2021-03-23 | Tcl华星光电技术有限公司 | Metal transparent electrode and preparation method thereof |
| CN110265178A (en) * | 2019-07-01 | 2019-09-20 | 深圳技术大学 | Preparation method of flexible transparent conductive film |
| CN110565123B (en) * | 2019-08-28 | 2021-06-08 | 清华大学 | Manufacturing method and device of transferable transparent flexible breathable antenna |
| CN112951485B (en) * | 2021-01-26 | 2022-10-18 | 青岛理工大学 | Metal grid stretchable transparent electrode with shell-core structure, and preparation method and application thereof |
| CN113077937B (en) * | 2021-03-25 | 2022-11-04 | 惠州深格光电科技有限公司 | Processing technology of flexible transparent conductive film |
| CN113630915A (en) * | 2021-07-29 | 2021-11-09 | 上海师范大学 | Composite processing method for flexibly customizing high-adjustable flexible micro-heater and micro-heater |
| CN114283994B (en) * | 2021-11-23 | 2023-05-09 | 华中科技大学 | Embedded metal grid flexible electrode film and preparation method and application thereof |
| CN115274420B (en) * | 2022-08-15 | 2024-07-26 | 福州大学 | Preparation method of ALD hafnium dioxide thin film based on flexible substrate |
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