CN106675529A - Composite thermal interface material of orientated pored graphene foam and low-melting-point alloy - Google Patents
Composite thermal interface material of orientated pored graphene foam and low-melting-point alloy Download PDFInfo
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- CN106675529A CN106675529A CN201611142514.6A CN201611142514A CN106675529A CN 106675529 A CN106675529 A CN 106675529A CN 201611142514 A CN201611142514 A CN 201611142514A CN 106675529 A CN106675529 A CN 106675529A
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- low
- melting
- melting alloy
- point alloy
- alloy
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- 239000000463 material Substances 0.000 title claims abstract description 28
- 239000006260 foam Substances 0.000 title claims abstract description 25
- 239000002131 composite material Substances 0.000 title claims abstract description 19
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 14
- 239000000956 alloy Substances 0.000 title claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title abstract description 7
- 229910021389 graphene Inorganic materials 0.000 title abstract description 7
- 239000007787 solid Substances 0.000 claims abstract description 8
- 239000011148 porous material Substances 0.000 claims abstract description 5
- 230000008018 melting Effects 0.000 claims abstract description 3
- 238000002844 melting Methods 0.000 claims abstract description 3
- 229910000743 fusible alloy Inorganic materials 0.000 claims description 31
- 238000012546 transfer Methods 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000000155 melt Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910000807 Ga alloy Inorganic materials 0.000 abstract description 4
- 238000012360 testing method Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- MPZNMEBSWMRGFG-UHFFFAOYSA-N bismuth indium Chemical group [In].[Bi] MPZNMEBSWMRGFG-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004100 electronic packaging Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000005574 cross-species transmission Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/08—Materials not undergoing a change of physical state when used
- C09K5/14—Solid materials, e.g. powdery or granular
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Combustion & Propulsion (AREA)
- Thermal Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides a composite thermal interface material of orientated pored graphene foams and a low-melting-point alloy. At normal temperature, the low-melting-point alloy exists in pores of the graphene foams in a solid manner; at working temperature, the low-melting-point alloy is molten and filled into pores of heat conduction interfaces, and the low-melting-point alloy can be prevented from overflowing by the graphene foams; the low-melting-point alloy is an indium-bismuth-tin-gallium alloy; the melting point of the low-melting-point alloy is within 40-70 DEG C; the graphene foams are of a pored structure parallel to a heat conduction direction. After the low-melting-point alloy is filled, the heat conductivity in the heat conduction direction can be greatly improved.
Description
Technical field
The present invention relates to Heat Conduction Material field, and in particular to a kind of directional hole grapheme foam is answered with low-melting alloy
Close thermal interfacial material.
Background technology
As electronic device is to miniaturization, miniaturization development, and the integrated level more and more higher of electronic chip, electronics
The work efficiency and reliability of device are increasingly dependent on the solution of heat dissipation problem, therefore the radiating of Electronic Packaging becomes all the more
It is important.Heat dissipation problem is especially prominent for the impact of those high power consumption devices, and such as high power diode laser, high brightness light
Diode and high power sensor etc., can produce substantial amounts of heat during these working sensors, need using with high heat conductance
Thermal interfacial material fast and effeciently could be transferred to external environment via fin.Very smooth solid table under perusal
Face is actually very irregular under nanoscale, presents the pattern as wave, there is various nanoscales above
" mountain peak " and " mountain valley ", the actual machine contact area of solid interface is very little between electronic chip and radiator, solid table
Most of region in face is separated by air.Due to the thermal conductivity of air it is very little so that integrated circuit (chip) work when
The amount of heat of generation can not effectively be conducted via chip package shell, little by little be accumulated on the contrary, finally be caused
Temperature is substantially increased.Thermal interfacial material can fill the space between heat transfer interface, realize heat between two solid interfaces
Quick conduction, such issues that so as to solve.At present, the thermal interfacial material applied on market mainly has heat-conducting silicone grease, heat-conducting glue, phase
Become material, thermally conductive gel, particles filled polymer-based composite heat interfacial material and low-melting-point metal thermal interfacial material etc..
Metal generally has higher thermal conductivity, is the thermal interfacial material that a class is highly paid close attention to.For most of gold
For category, fusing point is all higher, it is impossible to apply individually to Electronic Packaging.Under normal circumstances, reducing the fusing point of metal mainly has
Two approach, one is to form solid solution, eutectic structure or intermetallic compound with low-melting-point metal, and another is to realize metal
Size extra smallization of nano-particle, so can just be preferably applied for hot interface field of radiating.Low-melting-point metal thermal interfacial material
Mainly there are bismuth, stannum, indium, lead, gallium etc., and low-melting alloy not only has relatively low fusing point, and adjustment alloy can be passed through
Constitute to obtain different fusing points.Generally the thermal conductivity of low-melting-point metal or alloy is higher than macromolecule or grease of silicone fluid
Go out two orders of magnitude.
The excellent thermal conductivity of low-melting alloy itself, and low-melting alloy just can melt at relatively low temperatures
For liquid, two solid interfaces of moistening, the space of contact interface is filled, reduce thermal contact resistance.When but low-melting alloy is melted
Spillover is also easy to produce, easily pollution is produced to electronic devices and components and is even caused short trouble.If can be by low-melting alloy
Combine composition composite heat interfacial material with porous material, it is possible to avoid the overflow problem of liquid low-melting alloy.Additionally,
Common porous material thermal resistance is larger, and inner void random distribution, and thermally conductive pathways are long, are also unfavorable for the raising of thermal conductivity.
The content of the invention
For the problems referred to above, the invention provides the Graphene with directional hole and low-melting alloy of a kind of high heat conduction
Composite heat interfacial material.
Graphene itself has high thermal conductivity, and grapheme foam plays the work of skeleton in composite heat interfacial material
With while play a part of storage to liquid low-melting alloy, liquid low-melting alloy being avoided from overflowing.In grapheme foam
Hole be align and with the parallel through hole in heat transfer direction, low-melting alloy is filled in hole.Low-melting alloy
It is made up of indium, bismuth, stannum, gallium, quality is In100BixSnyGaz, wherein x ＜ 100, y ＜ 50, z ＜ 2.5 than formula.Above-mentioned eutectic
The fusing point of point alloy is between 40~70 DEG C.Low-melting alloy is present in solid form the hole of grapheme foam under room temperature
In.When operating temperature exceedes the fusing point of low-melting alloy, low-melting alloy melts the liquid alloy moistening heat transfer contact to be formed
Face, the space on filling interface, so as to reduce interface contact heat resistance.Simultaneously as the duct aligned in grapheme foam
Parallel to heat transfer direction, therefore liquid gold melting alloy has most short heat-transfer path.Above-mentioned factor is integrated so that described
Composite heat interfacial material has excellent heat transfer property.
Description of the drawings
Fig. 1 is the structural representation of composite heat interfacial material of the present invention, wherein 1 is with parallel to heat transfer direction
The grapheme foam of directional hole, 2 is low-melting alloy.
Specific embodiment
Below with reference to embodiment, the invention will be further described.
Example 1
The composite heat interfacial material that the present embodiment is provided, by the grapheme foam with directional hole and low-melting alloy group
Into low-melting alloy is filled uniformly with the hole of grapheme foam.The directional hole of grapheme foam is parallel to heat transfer side
To aperture is 1300 microns.Low-melting alloy is indium bismuth stannum gallium alloy, and mass ratio is In100Bi66Sn33Ga1.2, and fusing point is
63℃.In Longwin TIM LW-9389 stable state heat flow method thermal conductivity test instrument (Taiwan Rui Ling Science and Technology Co., Ltd.) tests
The thermal conductivity of above-mentioned composite heat interfacial material, when test temperature is 30 DEG C, thermal conductivity is 8W/ (mk)；Test temperature is 70 DEG C
When, thermal conductivity is 36W/ (mk).
Example 2
The composite heat interfacial material that the present embodiment is provided, by the grapheme foam with directional hole and low-melting alloy group
Into low-melting alloy is filled uniformly with the hole of grapheme foam.The directional hole of grapheme foam is parallel to heat transfer side
To aperture is 1300 microns.Low-melting alloy is indium bismuth stannum gallium alloy, and mass ratio is In100Bi62Sn31Ga16, and fusing point is 47
℃.In Longwin TIM LW-9389 stable state heat flow method thermal conductivity test instrument (Taiwan Rui Ling Science and Technology Co., Ltd.) tests
The thermal conductivity of composite heat interfacial material is stated, when test temperature is 30 DEG C, thermal conductivity is 13W/ (mk)；Test temperature is 60 DEG C
When, thermal conductivity is 42W/ (mk).
Example 3
The composite heat interfacial material that the present embodiment is provided, by the grapheme foam with directional hole and low-melting alloy group
Into low-melting alloy is filled uniformly with the hole of grapheme foam.The directional hole of grapheme foam is parallel to heat transfer side
To aperture is 700 microns.Low-melting alloy is indium bismuth stannum gallium alloy, and mass ratio is In100Bi66Sn33Ga1.2, and fusing point is 63
℃.In Longwin TIM LW-9389 stable state heat flow method thermal conductivity test instrument (Taiwan Rui Ling Science and Technology Co., Ltd.) tests
The thermal conductivity of composite heat interfacial material is stated, when test temperature is 30 DEG C, thermal conductivity is 5W/ (mk)；When test temperature is 70 DEG C,
Thermal conductivity is 32W/ (mk).
Claims (4)
1. the composite heat interfacial material of a kind of directional hole grapheme foam and low-melting alloy, it is characterised in that low under room temperature
Melting alloy is present in solid form in the hole of grapheme foam, and low-melting alloy melts and fill heat transfer under operating temperature
The space at interface, grapheme foam can prevent low-melting alloy from overflowing.
2. composite heat interfacial material as claimed in claim 1, it is characterised in that described grapheme foam has parallel to biography
The pore space structure in hot direction, hole diameter is 200~2000 microns, and length is 500~5000 microns.
3. composite heat interfacial material as claimed in claim 1, it is characterised in that the low-melting alloy is by indium, bismuth, stannum, gallium
Composition, quality is In100BixSnyGaz, wherein x ＜ 100, y ＜ 50, z ＜ 2.5 than formula.
4. composite heat interfacial material as claimed in claim 1, it is characterised in that the fusing point of described low-melting alloy is between 40
Between~70 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611142514.6A CN106675529A (en) | 2016-12-13 | 2016-12-13 | Composite thermal interface material of orientated pored graphene foam and low-melting-point alloy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611142514.6A CN106675529A (en) | 2016-12-13 | 2016-12-13 | Composite thermal interface material of orientated pored graphene foam and low-melting-point alloy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106675529A true CN106675529A (en) | 2017-05-17 |
Family
ID=58869314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611142514.6A Pending CN106675529A (en) | 2016-12-13 | 2016-12-13 | Composite thermal interface material of orientated pored graphene foam and low-melting-point alloy |
Country Status (1)
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511407A (en) * | 2018-03-26 | 2018-09-07 | 清华大学深圳研究生院 | A kind of thermal interfacial material and preparation method thereof, application process |
| CN108912683A (en) * | 2018-06-13 | 2018-11-30 | 中国科学院金属研究所 | Based on low-melting-point metal conductive particle composite heat-conducting network thermal interfacial material and preparation method thereof |
| CN111263574A (en) * | 2020-03-19 | 2020-06-09 | 哈尔滨工程大学 | Thermoelectric protection device based on equivalent medium method and preparation method |
| CN113897184A (en) * | 2021-10-28 | 2022-01-07 | 广东墨睿科技有限公司 | Graphene-based high-thermal-conductivity phase-change material, and preparation method and production device thereof |
| CN115433552A (en) * | 2022-09-23 | 2022-12-06 | 云南科威液态金属谷研发有限公司 | Foam metal and low-melting-point alloy compounded thermal interface material and preparation method thereof |
| CN116589985A (en) * | 2023-07-17 | 2023-08-15 | 正通新捷科技(成都)有限公司 | Alloy phase change material for multi-temperature thermal management of lithium battery |
| US11795529B1 (en) | 2022-06-20 | 2023-10-24 | Industrial Technology Research Institute | Low-melting-point alloy composite material and composite material structure |
| CN117285822A (en) * | 2023-01-06 | 2023-12-26 | 六安铭芯信息科技有限公司 | Thermal interface material and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103490050A (en) * | 2012-06-11 | 2014-01-01 | 上海一广新能源科技有限公司 | Preparation method of porous graphene and applications of finished product thereof |
| CN104140786A (en) * | 2013-05-09 | 2014-11-12 | 中国科学院理化技术研究所 | Composite phase-change heat storage material |
| CN104773722A (en) * | 2015-04-01 | 2015-07-15 | 广东烛光新能源科技有限公司 | Multifunctional device, porous quasi-graphene macroscopic body and preparation method thereof |
| CN105349866A (en) * | 2015-11-26 | 2016-02-24 | 苏州天脉导热科技有限公司 | Low-melting-point alloy with melting point being 40-60 DEG C and preparation method of low-melting-point alloy |
-
2016
- 2016-12-13 CN CN201611142514.6A patent/CN106675529A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103490050A (en) * | 2012-06-11 | 2014-01-01 | 上海一广新能源科技有限公司 | Preparation method of porous graphene and applications of finished product thereof |
| CN104140786A (en) * | 2013-05-09 | 2014-11-12 | 中国科学院理化技术研究所 | Composite phase-change heat storage material |
| CN104773722A (en) * | 2015-04-01 | 2015-07-15 | 广东烛光新能源科技有限公司 | Multifunctional device, porous quasi-graphene macroscopic body and preparation method thereof |
| CN105349866A (en) * | 2015-11-26 | 2016-02-24 | 苏州天脉导热科技有限公司 | Low-melting-point alloy with melting point being 40-60 DEG C and preparation method of low-melting-point alloy |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511407A (en) * | 2018-03-26 | 2018-09-07 | 清华大学深圳研究生院 | A kind of thermal interfacial material and preparation method thereof, application process |
| CN108511407B (en) * | 2018-03-26 | 2020-07-17 | 清华大学深圳研究生院 | Thermal interface material and preparation method and application method thereof |
| CN108912683A (en) * | 2018-06-13 | 2018-11-30 | 中国科学院金属研究所 | Based on low-melting-point metal conductive particle composite heat-conducting network thermal interfacial material and preparation method thereof |
| CN111263574A (en) * | 2020-03-19 | 2020-06-09 | 哈尔滨工程大学 | Thermoelectric protection device based on equivalent medium method and preparation method |
| CN111263574B (en) * | 2020-03-19 | 2021-10-01 | 哈尔滨工程大学 | Thermoelectric protection device based on equivalent medium method and preparation method |
| CN113897184B (en) * | 2021-10-28 | 2022-08-09 | 广东墨睿科技有限公司 | Graphene-based high-thermal-conductivity phase-change material, and preparation method and production device thereof |
| CN113897184A (en) * | 2021-10-28 | 2022-01-07 | 广东墨睿科技有限公司 | Graphene-based high-thermal-conductivity phase-change material, and preparation method and production device thereof |
| US11795529B1 (en) | 2022-06-20 | 2023-10-24 | Industrial Technology Research Institute | Low-melting-point alloy composite material and composite material structure |
| CN115433552A (en) * | 2022-09-23 | 2022-12-06 | 云南科威液态金属谷研发有限公司 | Foam metal and low-melting-point alloy compounded thermal interface material and preparation method thereof |
| CN115433552B (en) * | 2022-09-23 | 2024-03-29 | 云南科威液态金属谷研发有限公司 | Foam metal and low-melting-point alloy composite thermal interface material and preparation method thereof |
| CN117285822A (en) * | 2023-01-06 | 2023-12-26 | 六安铭芯信息科技有限公司 | Thermal interface material and preparation method thereof |
| CN116589985A (en) * | 2023-07-17 | 2023-08-15 | 正通新捷科技(成都)有限公司 | Alloy phase change material for multi-temperature thermal management of lithium battery |
| CN116589985B (en) * | 2023-07-17 | 2023-12-26 | 正通新捷科技(成都)有限公司 | Alloy phase change material for multi-temperature thermal management of lithium battery |
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Application publication date: 20170517 |