CN106656064A - Power amplification circuit - Google Patents
Power amplification circuit Download PDFInfo
- Publication number
- CN106656064A CN106656064A CN201610915606.7A CN201610915606A CN106656064A CN 106656064 A CN106656064 A CN 106656064A CN 201610915606 A CN201610915606 A CN 201610915606A CN 106656064 A CN106656064 A CN 106656064A
- Authority
- CN
- China
- Prior art keywords
- transistor
- circuit
- power amplification
- base stage
- amplification circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/555—A voltage generating circuit being realised for biasing different circuit elements
Abstract
The present disclosure provides a power amplification circuit that includes a bias circuit that can improve the distortion characteristics of an output signal across a wide range of output levels and a wide range of frequencies. A power amplification circuit includes: a first output transistor that has a power supply voltage supplied to its collector or drain, has a common emitter or source, amplifies an input signal supplied to its base or gate and outputs a first amplified signal from its collector or drain; a first transistor that has the power supply voltage supplied to its collector or drain, has a first current supplied to its base or gate and supplies a first bias current to the base or gate of the first output transistor from its emitter or source; and a second transistor that has its collector or drain connected to the base or gate of the first transistor, has a second current supplied to its base or gate and supplies a second bias current to the base or gate of the first output transistor from its emitter or source.
Description
Technical field
The present invention relates to power amplification circuit.
Background technology
Output signal can produce distortion in the known power amplification circuit using transistor, so as to generally require larger
Suppress the distortion of output signal under the output level of scope.For the requirement, for example, Patent Document 1 discloses a kind of power
Amplifying circuit, its detection used in biasing circuit carries out detection with the amplitude of the envelope signal of diode pair input signal, should
Amplitude is bigger, just all the more suppresses the magnitude of current of bias current.
Prior art literature
Patent document
Patent document 1：International Publication No. 2009/125555
The content of the invention
Invent technical problem to be solved
Distorted characteristic not only has the dependence of output level, also there is frequency dependence, but public in patent document 1
In the circuit opened, although the distorted characteristic of output signal can be improved under large range of output level, but it is difficult to improve wide
Distorted characteristic under the frequency of frequency band.
The present invention is completed in view of the foregoing, its objective is that providing one kind possesses and can export electricity large range of
Improve the power amplification circuit of the biasing circuit of the distorted characteristic of output signal under flat and wide band frequency.
Solve the technical scheme of technical problem
In order to reach above-mentioned purpose, the power amplification circuit involved by a side of the present invention includes：First output is brilliant
Body pipe, the colelctor electrode of first output transistor or drain electrode are provided supply voltage, emitter stage or source ground, to providing
Input signal to base stage either grid is amplified and amplifies signal from colelctor electrode or drain electrode output first；First crystal
Pipe, the colelctor electrode of the first transistor or drain electrode are provided supply voltage, and base stage or grid are provided the first electric current, from sending out
Either source electrode provides the first bias current to emitter-base bandgap grading to the base stage or grid of the first output transistor；And transistor seconds, should
The base stage or grid that the colelctor electrode of transistor seconds either drains with the first transistor is connected, the base stage of the transistor seconds or
Person's grid is provided the second electric current, and from emitter stage, either source electrode is inclined to the base stage or grid offer second of the first output transistor
Electric current is put, and the power amplification circuit can be adjusted to the magnitude of current of at least one party in the first electric current and the second electric current.
Invention effect
According to the present invention, can provide that one kind possesses can be under large range of output level and wide band frequency to defeated
Go out the power amplification circuit of the biasing circuit that the distorted characteristic of signal is improved.
Description of the drawings
Fig. 1 is the circuit diagram of the power amplification circuit involved by the 1st embodiment of the present invention.
Fig. 2 is the curve map of the gain characteristic figure of the power amplification circuit involved by the 1st embodiment for illustrating the present invention.
Fig. 3 is the circuit diagram of the power amplification circuit involved by the 2nd embodiment of the present invention.
Fig. 4 is the circuit diagram of the power amplification circuit involved by the 3rd embodiment of the present invention.
Fig. 5 is the circuit diagram of the power amplification circuit involved by the 4th embodiment of the present invention.
Fig. 6 is the curve map of the gain characteristic figure of the power amplification circuit involved by the 4th embodiment for illustrating the present invention.
Fig. 7 A are the simulations of the ACLR characteristics of the power amplification circuit involved by the 1st embodiment for illustrating the present invention and comparative example
As a result curve map.
Fig. 7 B are the simulations of the gain characteristic of the power amplification circuit involved by the 1st embodiment for illustrating the present invention and comparative example
As a result curve map.
Fig. 8 A are the songs of the analog result of the ACLR characteristics of the power amplification circuit involved by the 4th embodiment for illustrating the present invention
Line chart.
Fig. 8 B are the songs of the analog result of the ACLR characteristics of the power amplification circuit involved by the 4th embodiment for illustrating the present invention
Line chart.
Fig. 8 C are the songs of the analog result of the ACLR characteristics of the power amplification circuit involved by the 4th embodiment for illustrating the present invention
Line chart.
Fig. 8 D are the songs of the analog result of the gain characteristic of the power amplification circuit involved by the 4th embodiment for illustrating the present invention
Line chart.
Fig. 8 E are the songs of the analog result of the gain characteristic of the power amplification circuit involved by the 4th embodiment for illustrating the present invention
Line chart.
Fig. 8 F are the songs of the analog result of the gain characteristic of the power amplification circuit involved by the 4th embodiment for illustrating the present invention
Line chart.
Fig. 9 A are the songs of the analog result of the ACLR characteristics of the power amplification circuit involved by the 4th embodiment for illustrating the present invention
Line chart.
Fig. 9 B are the songs of the analog result of the gain characteristic of the power amplification circuit involved by the 4th embodiment for illustrating the present invention
Line chart.
Fig. 9 C are the songs of the analog result of the ACLR characteristics of the power amplification circuit involved by the 4th embodiment for illustrating the present invention
Line chart.
Fig. 9 D are the songs of the analog result of the gain characteristic of the power amplification circuit involved by the 4th embodiment for illustrating the present invention
Line chart.
Fig. 9 E are the songs of the analog result of the ACLR characteristics of the power amplification circuit involved by the 4th embodiment for illustrating the present invention
Line chart.
Fig. 9 F are the songs of the analog result of the gain characteristic of the power amplification circuit involved by the 4th embodiment for illustrating the present invention
Line chart.
Specific embodiment
Hereinafter, for embodiments of the present invention, it is described in detail referring to the drawings.Additionally, for identical key element, mark
Note same-sign simultaneously omits repeat specification.
The embodiment of==the 1st==
Fig. 1 is the figure of the configuration example of the power amplification circuit 100A of an embodiment of the invention.
Power amplification circuit 100A is to wireless frequency (RF：Radio Frequency) signal RFin (input signal) carries out
Amplify, and export amplification signal RFout1 (first amplifies signal).
As shown in figure 1, power amplification circuit 100A includes biasing circuit 200A, control circuit 300, capacity cell C1, electricity
Sensor L1 and bipolar transistor TrRF1.
Biasing circuit 200A generates bias current Ibias1 (the first bias current), Ibias2 (the second bias current), and
The base stage of bidirectional bipolar transistor TrRF1 provides bias current Ibias1, Ibias2.The details of the structure of biasing circuit 200A
To illustrate below.
Control circuit 300 generates the electric current of regulation, and supplies current to biasing circuit 200A.Specifically, electricity is controlled
Control electric current Icont1 (the first control electric current) and Icont2 (the second control electric current) are supplied to biasing circuit 200A by road 300,
To control the magnitude of current of bias current Ibias1 and Ibias2.Control electric current Icont1 and Icont2 can be carried out separately
Control.
In capacity cell C1, RF signal RFin, the second end are provided from the outside of power amplification circuit 100A to the first terminal
Son is connected with the base stage of bipolar transistor TrRF1.Capacity cell C1 removes the DC component of RF signal RFin.
In inductor L1, power source voltage Vcc is provided to the collection of the first terminal, Second terminal and bipolar transistor TrRF1
Electrode connects.
Supply voltage is provided on the colelctor electrode of bipolar transistor TrRF1 (the first output transistor) via inductor L1
Vcc, base stage is connected with the Second terminal of capacity cell C1, grounded emitter.There is provided from the outside of power amplification circuit 100A
RF signals RFin and bias current Ibias1, Ibias2 from biasing circuit 200A outputs are provided to bipolar transistor
The base stage of TrRF1.Thus, the amplification signal after RF signals RFin is amplified is exported from the colelctor electrode of bipolar transistor TrRF1
RFout1.Additionally, the gain characteristic of bipolar transistor TrRF1 is controlled by the bias current provided from biasing circuit 200A.
Then, the production method of the bias current for biasing circuit 200A is described.
Biasing circuit 200A includes voltage generation circuit 210 (210a, 210b)；Resistive element R1, R2；And bipolar transistor
Pipe Tr1, Tr2.
Voltage generation circuit 210 (210a, 210b) based on from control circuit 300 provide control electric current Icont1 and
Icont2, generates the voltage of specified level.
Specifically, voltage generation circuit 210a (first voltage generative circuit) includes such as resistive element R3；Bipolar crystalline substance
Body pipe Tr4, Tr5；And capacity cell C2.In resistive element R3 (first resistor element), control electric current Icont1 is provided to
The first terminal, Second terminal is connected with the colelctor electrode of bipolar transistor Tr4.In bipolar transistor Tr4 (the 4th transistor), carry out
Diode connects, and colelctor electrode is connected to the Second terminal of resistive element R3, and emitter stage is connected to the current collection of bipolar transistor Tr5
Pole.In bipolar transistor Tr5 (the 5th transistor), diode connection is carried out, colelctor electrode is connected to the transmitting of bipolar transistor Tr4
Pole, grounded emitter.In capacity cell C2, the first terminal is connected to the Second terminal of resistive element R3 and bipolar transistor Tr4
Colelctor electrode, Second terminal ground connection.
Additionally, voltage generation circuit 210b (second voltage generative circuit) includes such as resistive element R4 (second resistance units
Part)；Bipolar transistor Tr6 (the 6th transistor), Tr7 (the 7th transistor)；And capacity cell C3.Voltage generation circuit 210b
Structure it is identical with voltage generation circuit 210a, therefore omit detailed description.
According to above-mentioned structure, in voltage generation circuit 210a, by diode connect two bipolar transistor Tr4,
Tr5, in the colelctor electrode of bipolar transistor Tr4 the voltage (first voltage) (such as 2.6v or so) of specified level is produced.In voltage
In generative circuit 210b, two bipolar transistors Tr6, Tr7 connected by diode, in the colelctor electrode of bipolar transistor Tr6
Produce the voltage (second voltage) (such as 2.6v or so) of specified level.
In bipolar transistor Tr1 (the first transistor), power source voltage Vcc is provided to colelctor electrode, and base stage is connected to bipolar
The colelctor electrode of transistor Tr4, emitter stage is connected to the first terminal of resistive element R1.There is provided to the base stage of bipolar transistor Tr1
Electric current (the first electric current) be controlled by control electric current Icont1 provided from control circuit 300.
In bipolar transistor Tr2 (transistor seconds), colelctor electrode is connected to the base stage of bipolar transistor Tr1, base stage connection
To the colelctor electrode of bipolar transistor Tr1, emitter stage is connected to the first terminal of resistive element R2.There is provided to bipolar transistor Tr2
The electric current (the second electric current) of base stage be controlled by control electric current Icont2 provided from control circuit 300.
In resistive element R1, R2, respective the first terminal is connected with the emitter stage of bipolar transistor Tr1, Tr2, the second end
Son is connected with the base stage of bipolar transistor TrRF1.
According to said structure, biasing circuit 200A generates bias current Ibias1, Ibias2, and provides to bipolar transistor
The base stage of TrRF1.
Hereinafter, as the power supply source of bias current, the switching effect and effect for bias current Ibias and Ibias2 is entered
Row detailed description.
Each current value of bias current Ibias and Ibias2 enters according to power output Pout1 of bipolar transistor TrRF1
Row changes.For this point is illustrated.
In the less situation of power output Pout1 of bipolar transistor TrRF1 (the less feelings of signal level of RF signals
Condition) under, the magnitude of current of the base current Ibb of bipolar transistor TrRF1 is less.In this case, needed for bipolar transistor TrRF1
The bias current wanted is a small amount of, therefore as the power supply source of bias current, flows through the bias current Ibias2 of bipolar transistor Tr2
Account for leading.This is because if bipolar transistor Tr2 has electric current to flow through, the base current of bipolar transistor Tr1 is brought out, so as to
The base current of bipolar transistor Tr1 is reduced.
On the other hand, in power output Pout1 of the bipolar transistor TrRF1 larger situation (signal level of RF signals
Larger situation) under, the magnitude of current of the base current Ibb of bipolar transistor TrRF1 is larger.In this case, bipolar transistor
TrRF1 needs more bias currents, hence in so that also providing bias current Ibias1 from bipolar transistor Tr1.Now, if double
Gated transistors Tr1 has electric current to flow through, then the collector current of bipolar transistor Tr2 will reduce the base stage electricity of bipolar transistor Tr1
Stream (if the current amplification degree of bipolar transistor Tr1 is set into hFE, base current=Ibias1 ÷ hFE) part.Thus, partially
Electric current Ibias1 increases are put, and bias current Ibias2 is reduced.That is, if the base current Ibb of bipolar transistor TrRF1 exceedes rule
Fixed level, then as the power supply source of bias current, the bias current Ibias1 for flowing through bipolar transistor Tr1 accounts for leading.For
The magnitude of current of above-mentioned bias current Ibias1, Ibias2, can be carried out by the magnitude of current to control electric current Icont1, Icont2
Control to adjust.
Then, the biased electrical obtained from the base terminal observation of bipolar transistor TrRF1 in power amplification circuit 100A is paid close attention to
Output impedance Z* of road 200A.Z1 will be set to via the output impedance in the path of bipolar transistor Tr1, and will be via bipolar transistor
The output impedance in the path of pipe Tr2 is set to Z2 and Boltzmann constant is set into k, and absolute temperature is set into T, and elementary charge is set into q,
The resistance value of resistive element R1, R2 is set into r1, r2, the current amplification degree of bipolar transistor Tr1 is set into hFE, will be from bipolar
The output impedance of the side of control circuit 300 that the base terminal observation of transistor Tr1 is obtained is set to Z ', then Z1 and Z2 is by following formula
(1), (2) are representing.
【Mathematical expression 1】
Thus, Z* with following formula (3) by being represented.
【Mathematical expression 2】
In the case where the magnitude of current of base current Ibb is less, the power supply source of bias current as described above, biased electrical
Stream Ibias2 accounts for leading, and the value of the Ibias1 in the right Section 1 of formula (1) is less.Thus, Z1 is overall very big value, root
According to formula (3), Z* ≈ Z2 set up.Herein, by the output impedance Z1 ratio of Z2 and biasing circuit when not possessing bipolar transistor Tr2
Compared with, then in the 2nd, the right of formula (2), Z2 Zs ' bigger than Z1 not divided by (1+hFE) part value.Thus, in base stage electricity
In the case that the current value of stream Ibb is relatively low, biasing circuit 200A overall output impedance Z* with do not possess bipolar transistor Tr2's
Situation is compared higher.
On the other hand, the Ibias2 in the case where the magnitude of current of base current Ibb is more, in the 1st, the right of formula (2)
Value it is less, therefore Z2 becomes very big value.Thus, according to formula (3), Z* ≈ Z1 set up, overall defeated of biasing circuit 200A
Go out the situation identical value that impedance Z * becomes and do not possess bipolar transistor Tr2.
That is, in the less region of power output Pout1 of bipolar transistor TrRF1, overall defeated of biasing circuit 200A
Go out impedance Z * higher compared with the circuit for not possessing bipolar transistor Tr2.On the contrary, in the output work of bipolar transistor TrRF1
In the larger region of rate Pout1, biasing circuit 200A overall output impedance Z* becomes and the electricity for not possessing bipolar transistor Tr2
The roughly the same value in road.Thus, biasing circuit 200A overall output impedance Z* and the circuit phase for not possessing bipolar transistor Tr2
Than variable quantity is larger.Thus, in power amplification circuit 100A, the control of control electric current Icont1, Icont2 can be passed through, it is right
The magnitude of current of bias current Ibias1, Ibias2 is adjusted, so that the change of output impedance Z*.
Herein, with bipolar transistor TrRF1 power output Pout1 increase, bipolar transistor TrRF1 base stage electricity
The current value of stream Ibb increases, then the value of Ibb × Z* increases.Thus, bipolar transistor TrRF1 base voltage decline Ibb ×
Z*, therefore preferable gain can not be obtained.That is, if bipolar transistor TrRF1 exceedes the performance number under the output level of regulation
, then there is the phenomenon (gain compression) that gain reduces, gain characteristic deterioration in Pcomp.Additionally, under large range of output level
It is preferable that gain is fixed situation, and unfixed situation is referred to as gain characteristic deterioration.
And, if power output Pout1 further increases, increase with the amplitude of RF signal RFin, bipolar transistor
The RF amplitudes of the emitter terminal of Tr1 become big.On the other hand, based on RF signal RFin amplitudes bipolar transistor Tr1 base terminal
RF amplitudes it is less.That is, in bipolar transistor Tr1, emitter voltage is changed greatly, the change of another aspect base voltage
It is less.
Thus, in the case where the emitter voltage of bipolar transistor Tr1 rises with the amplitude of RF signal RFin, and base stage
The subtractive of voltage is little, and bipolar transistor Tr1 becomes cut-off state.On the other hand, the emitter voltage in bipolar transistor Tr1 declines
In the case of, and the difference increase of base voltage, bipolar transistor Tr1 becomes conducting state, suppresses the decline of emitter voltage.By
This, by repeating conducting state and cut-off state, the mean value of the emitter voltage of bipolar transistor Tr1 rises.
Thus, the base voltage of bipolar transistor TrRF1 rises, and the higher phenomenon of ratio of gains ideal value occurs, and (gain is expanded
Exhibition).That is, in bipolar transistor TrRF1, if the output electricity higher more than performance number Pcomp under the output level than specifying
, then there is gain extension, gain characteristic deterioration in performance number Pexp under flat.
For above-mentioned gain compression and gain extension, in power amplification circuit 100A, by above-mentioned output impedance
The control of Z*, performance number Pcomp that energy adjust gain compression starts.Hereinafter, with reference to Fig. 2, for performance number Pcomp, Pexp
Specific method of adjustment is illustrated.
Fig. 2 is the curve map of the graph of a relation of the power output Pout1 and gain characteristic for illustrating bipolar transistor TrRF1.This
Place, as an example of the control of output impedance Z*, is adjusted to the magnitude of current of control electric current Icont2.As shown in Fig. 2
If increasing the magnitude of current of control electric current Icont2, output impedance Z* increases, and performance number Pcomp that gain compression starts diminishes.
If on the contrary, reducing the magnitude of current of control electric current Icont2, output impedance Z* reduces, the performance number that gain compression starts
Pcomp becomes big.Thus, by being adjusted to control electric current Icont2 so that gain compression starts performance number Pcomp for producing
Close gain extension starts performance number Pexp for producing such that it is able to suppress gain characteristic with the variation of power output Pout1
And deteriorate.
And, although be present frequency dependence in gain characteristic, but in power amplification circuit 100A, can be believed according to RF
The frequency of number RFin is independently controlled to control electric current Icont1 and Icont2 of control circuit 300.Thus, in broadband
RF signal RFin in, the deterioration of gain characteristic can be improved.
The embodiment of==the 2nd==
Fig. 3 is an example i.e. figure of power amplification circuit 100B for illustrating power amplification circuit 100.Additionally, with work(
Identical label is marked in the key element of rate amplifying circuit 100A equivalents and is omitted the description.Power amplification circuit 100B includes biased electrical
Road 200B replaces the biasing circuit 200A of power amplification circuit 100A.
Compared with the biasing circuit 200A shown in Fig. 1, difference is to be also equipped with electric current adjustment electricity to biasing circuit 200B
Road 220.
Matrix current adjustment circuit 220 includes bipolar transistor Tr3 and resistive element R5.
In bipolar transistor Tr3 (third transistor), colelctor electrode is connected with the base stage of bipolar transistor Tr2, base stage with electricity
The first terminal connection of resistance element R5, grounded emitter.
In resistive element R5, the first terminal is connected with the base stage of bipolar transistor Tr3, Second terminal and bipolar transistor
The emitter stage connection of Tr1.
In biasing circuit 200B, matrix current adjustment circuit 220 is according to the bias current Ibias1 for flowing through bipolar transistor Tr1
The magnitude of current, the magnitude of current of the base current of bipolar transistor Tr2 is adjusted.Specifically, if bias current Ibias1
More than the level of regulation, then bipolar transistor Tr3 is in conducting state, and draws the base current of bipolar transistor Tr2.Thus,
The magnitude of current for flowing through the bias current Ibias2 of bipolar transistor Tr2 is reduced, therefore, it is possible to reduce the main power supply of bias current
Source is switched to bipolar transistor Tr1 (from Ibias1 from bipolar transistor Tr2<Ibias2 is changed into Ibias1>It is defeated when Ibias2)
Go out the level of signal.
The embodiment of==the 3rd==
Fig. 4 is an example i.e. figure of power amplification circuit 100C for illustrating power amplification circuit 100.Additionally, with work(
Identical label is marked in the key element of rate amplifying circuit 100A equivalents and is omitted the description.Power amplification circuit 100C includes biased electrical
Road 200C replaces the biasing circuit 200A of power amplification circuit 100A.
Compared with the biasing circuit 200A shown in Fig. 1, difference is biasing circuit 200C：Power source voltage Vcc (first
Control voltage) replace control electric current Icont1 to be provided to input terminal (the of resistive element R3 of voltage generation circuit 210a
One terminal).According to the structure, voltage generation circuit 210a is driven by power source voltage Vcc, thus with biasing circuit 200A phases
Than reducing by a terminal.Thus, power amplification circuit 100C can reduce chip compared with power amplification circuit 100A
Size and acquisition and power amplification circuit 100A identical effects.
Moreover it is possible to using following structure：Power source voltage Vcc (the second control voltage) is provided to voltage generation circuit
The input terminal (the first terminal of resistive element R4) of 210b rather than voltage generation circuit 210a, control electric current Icont1 is provided
To the input terminal (the first terminal of resistive element R3) of voltage generation circuit 210a.
Additionally, power amplification circuit 100B as shown in Figure 3 is like that, even if in the structure for possessing matrix current adjustment circuit 220
In, it is also possible to adopt and the embodiment identical structure shown in Fig. 4.
The embodiment of==the 4th==
Fig. 4 is an example i.e. figure of power amplification circuit 100D for illustrating power amplification circuit 100.Additionally, with work(
Identical label is marked in the key element of rate amplifying circuit 100A equivalents and is omitted the description.
Compared with the power amplification circuit 100A shown in Fig. 1, difference is to adopt two-stage to power amplification circuit 100D
The multistage amplifier circuit of amplifier.
Specifically, as shown in figure 5, power amplification circuit 100D is in addition to the structure of power amplification circuit 100A, also
Including biasing circuit 200D, capacity cell C4, inductor L2 and bipolar transistor TrRF2.
Biasing circuit 200D includes voltage generation circuit 210c, resistive element R6 and bipolar transistor Tr8.
Voltage generation circuit 210c includes such as resistive element R7；Bipolar transistor Tr9, Tr10；And capacity cell C5.
The structure of voltage generation circuit 210c is identical with voltage generation circuit 210a, therefore omits detailed description.
In resistive element R6, the first terminal is connected with the emitter stage of bipolar transistor Tr8, Second terminal and bipolar transistor
The base stage connection of TrRF2.
In bipolar transistor Tr8, power source voltage Vcc is provided to colelctor electrode, and base stage is connected to the second of resistive element R7
The colelctor electrode of terminal and bipolar transistor Tr9, emitter stage is connected to the first terminal of resistive element R6.Carry from control circuit 300
For control electric current Icont3 and voltage from voltage generation circuit 210c outputs be provided to the base stage of bipolar transistor Tr8.
Thus, from the emitter stage output bias current of bipolar transistor Tr8.
By said structure, biasing circuit 200D is provided bias current to the base stage of bipolar transistor TrRF2.
In capacity cell C4, the amplification signal RFout1 after the colelctor electrode of bipolar transistor TrRF1 amplifies is provided
To the first terminal, Second terminal is connected with the base stage of bipolar transistor TrRF2.Capacity cell C4 is removed and is amplified signal RFout1's
DC component.
In inductor L2, power source voltage Vcc is provided to the collection of the first terminal, Second terminal and bipolar transistor TrRF2
Electrode connects.
In bipolar transistor TrRF2 (the second output transistor), power source voltage Vcc is provided to current collection via inductor L2
Pole, base stage is connected with the Second terminal of capacity cell C4, grounded emitter.Amplify signal RFout1 and defeated from biasing circuit 200D
The bias current for going out is provided to the base stage of bipolar transistor TrRF2.Thus, export from the colelctor electrode of bipolar transistor TrRF2
The amplification signal RFout2 after signal RFout1 further sends out greatly will be amplified (second amplifies signal).That is, power amplification circuit
100D is the higher circuit of the overall magnifying power of circuit compared with power amplification circuit 100A～100C.
Then, the ameliorative way of the deterioration of the gain characteristic for power amplification circuit 100D, illustrates with reference to Fig. 6.
The top of Fig. 6 is to illustrate the bipolar transistor TrRF1 (first order amplifier) of power amplification circuit 100D and bipolar
The curve map of the graph of a relation of transistor TrRF2 (last pole amplifier) respective power outputs and gain characteristic.Such as Fig. 6 tops institute
Show do not possess the gain characteristic of most post-amplifier at the biasing circuit 200D places of bipolar transistor Tr2 more than regulation
There is gain extension during output power value, gain compression is carried out afterwards.
Herein, first order amplifier, can be to starting the defeated of gain compression as shown in Fig. 2 by biasing circuit 200A
Performance number Pcomp gone out under level is adjusted.Thus, by being adjusted to performance number Pcomp so that first order amplifier
Gain characteristic become most post-amplifier gain characteristic opposite characteristic such that it is able to make first order amplifier and most rear class
The respective deterioration in characteristics of amplifier is cancelled out each other, and improves the deterioration of the gain characteristic after whole amplifier.
Specifically, as in fig. 6 upper, first order amplifier can be made to start performance number Pcomp_ of gain compression
Pre is close to performance number Pexp_Post that most post-amplifier starts gain extension.Thus, as shown in the lower part of Figure 6, if by first
Level amplifier and most post-amplifier gain characteristic synthesize, then most post-amplifier generation gain extension by the first order
The gain compression that amplifier is produced is offset, so as to improve the linear of gain characteristic.Thus, power amplification circuit 100D is put with power
Big circuit 100A is compared, it can be ensured that higher magnifying power, and can improve the bad of the gain characteristic after whole amplifier
Change.
And, as shown in the lower part of Figure 6, for the power under the output level that gain compression and gain extension switch
Value Ptop, in gain characteristic in post synthesis, compared with the most post-amplifier for not using biasing circuit 200A, can be compared
The higher performance number Ptop ' of performance number Ptop.That is, power amplification circuit 100D and the multistage amplification for not possessing biasing circuit 200A
Device is compared, and the deterioration of its gain characteristic can be improved to the RF signal RFin of larger range of performance number.
Additionally, identical with power amplification circuit 100A, by control circuit 300 can to control electric current Icont1～
Icont3 is separately controlled, therefore, it is possible to improve the deterioration of its gain characteristic to wide band RF signals RFin.
Even if additionally, possess the structure of matrix current adjustment circuit 220 like that in power amplification circuit 100B as shown in Figure 3,
Or power amplification circuit 100C as shown in Figure 4 like that provides power source voltage Vcc to voltage generation circuit 210a or 210b
Input terminal structure in, it is also possible to using and the embodiment identical structure shown in Fig. 5.
Additionally, amplifier is not limited to more than two-stage, or three-level.
Additionally, in the present embodiment, for although first order amplifier is to provide biased electrical by biasing circuit 200A
Stream, but the amplifier that biasing circuit 200A provides bias current is not limited to the first order, can be the amplifier of any level.
==analog result==
Then, the Adjacent Channel Leakage power ratio (AdjacentChannel for power amplifier 100A, 100D
Leakage Ratio:ACLR) analog result of characteristic and gain characteristic, illustrates with reference to Fig. 7～Fig. 9.
Fig. 7 A and Fig. 7 B are the power amplification circuit 100A and comparative example involved by the 1st embodiment for illustrating the present invention
The curve map of the analog result of ACLR characteristics and gain characteristic.Additionally, comparative example is that possess biasing circuit 200D to replace power
The power amplification circuit of the biasing circuit 200A in the structural element of amplifying circuit 100A.The longitudinal axis in curve map shown in Fig. 7 A
ACLR (dBc) is represented, the longitudinal axis in curve map shown in Fig. 7 B represents gain (dB), and transverse axis is all represented and amplifies signal RFout1's
Power P out1 (dBm).Fig. 7 A and Fig. 7 B are the control electric current Icont1=200 μ when the frequency of RF signal RFin is 824MHz
Analog result during A, Icont2=10 μ A.
As shown in Figure 7, it is known that the ACLR characteristics for power amplification circuit 100A, particularly it is in power output Pout1
In the region of 17dBm～29dBm, the ACLR of power amplification circuit 100A is lower than comparative example, amplifies the output letter of signal RFout1
Number distortion improved.
Additionally, as shown in Figure 7 B, it is known that for gain characteristic, particularly power P out1 are the increasing in the region of more than 20dBm
Benefit extension is inhibited compared to comparative example, and the linear of gain characteristic is also improved.
Then, for multistage amplifier circuit is the power amplification circuit 100D's involved by the 4th embodiment of the present invention
Analog result is illustrated.
Fig. 8 A～Fig. 8 F are power amplification electricity when illustrating the value generation various change for making control electric current Icont1, Icont2
The curve map of the analog result of the ACLR characteristics and gain characteristic of road 100D.The longitudinal axis table in curve map shown in Fig. 8 A～Fig. 8 C
Show ACLR (dBc), the longitudinal axis in curve map shown in Fig. 8 D～Fig. 8 F represents gain (dB), and transverse axis all represents amplification signal
Power P out2 (dBm) of RFout2.Fig. 8 A～Fig. 8 F are the RF signal RFin for frequency for 716MHz, make control electric current
Icont1, Icont2 are changed into respectively Icont1=(320 μ A, 400 μ A, 480 μ A), Icont2=(490 μ A, 560 μ A, 630 μ A,
700 μ A, 770 μ A, 840 μ A, 910 μ A (Fig. 8 A～Fig. 8 C)) when result.
As shown in Fig. 8 A～Fig. 8 F, it is known that occurred according to the magnitude of current of Icont1, Icont2, ACLR characteristics and gain characteristic
Change.According to the comparison of Fig. 8 A～Fig. 8 C, in (Icont1, Icont2)=(320 μ A, 840 μ A), particularly power P out2
ACLR near 25dBm is minimum (Fig. 8 A).Additionally, according to the comparison of Fig. 8 D～Fig. 8 F, for gain, (Icont1,
When Icont2)=(320 μ A, 840 μ A), the gain highest under large range of power P out2, and maintain linear (Fig. 8 D).
Thus, it is known that for frequency for 716MHz RF signal RFin, for example by control electric current is set to (Icont1, Icont2)=
(320 μ A, 840 μ A), can significantly improve the distortion of the output signal for amplifying signal RFout2.
Then, for different frequency RF signal RFin control electric current preferred compositions, reference picture 9A～Fig. 9 F carry out
Explanation.
Fig. 9 A～Fig. 9 F are illustrated in power amplification circuit 100D, by the frequency of RF signal RFin be set to 716MHz,
The curve of analog result when appropriately respectively setting the magnitude of current of control electric current Icont1, Icont2 when 824MHz, 915MHz
Figure.The longitudinal axis in curve map shown in Fig. 9 A, Fig. 9 C, Fig. 9 E represents ACLR (dBc), the curve map shown in Fig. 9 B, Fig. 9 D, Fig. 9 F
In the longitudinal axis represent gain (dB), transverse axis all represents power P out2 (dBm) for amplifying signal RFout2.
As shown in Fig. 9 A～Fig. 9 F, control electric current Icont1, Icont2 corresponding with the frequency of RF signal RFin it is preferred
Combination is (frequency:Icont1, Icont2)=(716MHz:320μA,840μA),(824MHz:480μA,840μA),
(915MHz:400μA,910μA).That is, the preferred compositions of control electric current Icont1, Icont2 are sent out according to the frequency of RF signal RFin
Changing.
It can be seen from above-mentioned analog result, in power amplification circuit 100D, by the frequency according to RF signal RFin
Separately control electric current Icont1, Icont2 is controlled, the mistake of the output signal for amplifying signal RFout2 can be reduced
Very.
Above for the exemplary embodiment of the present invention is illustrated.Power amplification circuit 100A～100D passes through
Bipolar transistor Tr2 is set in biasing circuit, and it is inclined that the base terminal observation so as to increase from bipolar transistor TrRF1 is obtained
Output impedance Z* of circuits, and output impedance Z* can be adjusted by the adjustment of control electric current Icont1～Icont3
It is whole.Accordingly, for the gain characteristic of bipolar transistor TrRF1, can adjust under power output carries out gain compression and gain
The region of extension, can improve the mistake of the output signal for amplifying signal RFout1, RFout2 under large range of power output
Very.Additionally, according to the frequency of RF signal RFin, can suitably be adjusted to control electric current Icont1～Icont3.Thus,
In wide band RF signals RFin, the distortion of the output signal for amplifying signal RFout1, RFout2 can be improved.
Additionally, power amplification circuit 100B possesses matrix current adjustment circuit 220, its basis flows through the inclined of bipolar transistor Tr1
The magnitude of current of electric current Ibias1 is put, the magnitude of current of the base current of bipolar transistor Tr2 is drawn.Thus, with power amplification circuit
100A is compared, can reduce the power supply source of bias current from bipolar transistor Tr2 bidirectional bipolar transistors Tr1 switch when output signal
Level.
Additionally, power amplification circuit 100C replaces control circuit 300 by power source voltage Vcc to voltage generation circuit 210a
Or voltage generation circuit 210b is driven.Thus, compared with power amplification circuit 100A, less chip chi can be passed through
Very little acquisition and power amplification circuit 100A identical effects.
Additionally, power amplification circuit 100D is in the multistage amplifier circuits for possessing dual-stage amplifier, will be by first
The amplification signal RFout1 that level amplifier is obtained further amplifies in last level, so as to export the circuit for amplifying signal RFout2.
In power amplification circuit 100D, by using biasing circuit 200A for first order amplifier, gain characteristic can be adjusted to
The opposite characteristic of the gain characteristic of most post-amplifier.Thus, the deterioration in characteristics of the first order and most rear class is cancelled out each other, so as to
Improve the deterioration as the overall gain characteristic of circuit.
Additionally, power amplification circuit 100A～100D possess according to the frequency of RF signal RFin to control electric current Icont1～
The control circuit 300 that the magnitude of current of Icont3 is adjusted.Thereby, it is possible to according to the frequency of RF signal RFin, to bipolar transistor
The base current of pipe Tr1 or bipolar transistor Tr2 is adjusted.
Additionally, each bipolar transistor in the power amplification circuit shown in Fig. 1 and Fig. 3～Fig. 5 can also use MOSFET
To replace.
Each embodiment described above, is to understand the present invention for convenient, and is not used to limit and explain the present invention.
On the premise of the thought without departing from the present invention, the present invention can be carried out to change/improve, and the equivalent invention of the present invention
It is included in the present invention.That is, the in addition appropriate design alteration on each embodiment of those skilled in the art, as long as comprising this
The technical characteristic of invention, is also contained in the scope of the present invention.Each key element that for example, each embodiment possesses and its configuration,
Material, condition, shape, size etc., it is exemplified to be not limited to embodiment, can suitably be changed.Additionally, each implement
The each key element for possessing is combined in the range of being technically possible, as long as technology of the composition of these key elements comprising the present invention is special
Levy and be also contained in the scope of the present invention.
Label declaration
100A, 100B, 100C, 100D power amplification circuit
200A, 200B, 200C, 200D biasing circuit
210a, 210b, 210c voltage generation circuit
220 matrix current adjustment circuits
300 control circuits
Vcc supply voltages
Tr1, Tr2, Tr3, Tr4, Tr5, Tr6, Tr7, Tr8, Tr9, Tr10, TrRF1, TrRF2 bipolar transistor
C1, C2, C3, C4, C5 capacity cell
R1, R2, R3, R4, R5, R6, R7 resistive element
L1, L2 inductor.
Claims (8)
1. a kind of power amplification circuit, including：
First output transistor, the colelctor electrode of first output transistor or drain electrode are provided supply voltage, first output
The emitter stage or source ground of transistor, to providing to the base stage of first output transistor or the input signal of grid
Row amplifies, and amplifies signal from the colelctor electrode or drain electrode output first；
The first transistor, the colelctor electrode of the first transistor or drain electrode are provided the supply voltage, the first transistor
Base stage or grid are provided the first electric current, and the emitter stage or source electrode from the first transistor is to first output transistor
Base stage or grid provide the first bias current；And
Transistor seconds, the base stage or grid that the colelctor electrode of the transistor seconds either drains with the first transistor connects
Connect, the base stage or grid of the transistor seconds are provided the second electric current, from the emitter stage or source electrode of the transistor seconds
The second bias current is provided to the base stage or grid of first output transistor,
And the power amplification circuit can be adjusted to the magnitude of current of first electric current and at least one party in the second electric current.
2. power amplification circuit as claimed in claim 1, it is characterised in that
Be also equipped with matrix current adjustment circuit, the matrix current adjustment circuit from the base stage of the transistor seconds or grid draw with it is described
The corresponding electric current of first bias current.
3. power amplification circuit as claimed in claim 2, it is characterised in that
The matrix current adjustment circuit possesses third transistor, the colelctor electrode of the third transistor or drain electrode and second crystal
The base stage of pipe or grid connect, the base stage of the third transistor either emitter stage or source of the grid with the first transistor
Pole connects, the emitter stage or source ground of the third transistor.
4. the power amplification circuit as described in any one in claims 1 to 3, it is characterised in that include：
First voltage generative circuit, the first voltage generative circuit provides the first voltage of specified level to the first crystal
The base stage or grid of pipe；And
Second voltage generative circuit, the second voltage generative circuit provides the second voltage of specified level to second crystal
The base stage or grid of pipe.
5. power amplification circuit as claimed in claim 4, it is characterised in that
The first voltage generative circuit includes：
First resistor element, one end of the first resistor element is provided the first control electric current or the first control voltage；
4th transistor, the colelctor electrode of the 4th transistor or drain electrode are connected to the other end of the first resistor element, should
Either grid is connected the base stage of the 4th transistor with colelctor electrode or drain electrode；And
5th transistor, the emitter stage or source electrode that the colelctor electrode of the 5th transistor either drains with the 4th transistor connects
Connect, either grid is connected with colelctor electrode or drain electrode for the base stage of the 5th transistor, the emitter stage of the 5th transistor or source
Pole is grounded,
The second voltage generative circuit includes：
Second resistance element, one end of the second resistance element is provided the second control electric current or the second control voltage；
6th transistor, the colelctor electrode of the 6th transistor or drain electrode are connected to the other end of the second resistance element, should
Either grid is connected the base stage of the 6th transistor with colelctor electrode or drain electrode；And
7th transistor, the emitter stage or source electrode that the colelctor electrode of the 7th transistor either drains with the 6th transistor connects
Connect, either grid is connected with colelctor electrode or drain electrode for the base stage of the 7th transistor, the emitter stage of the 7th transistor or source
Pole is grounded, from the colelctor electrode or the drain electrode output first voltage of the 4th transistor,
From the colelctor electrode or the drain electrode output second voltage of the 6th transistor.
6. the power amplification circuit as described in claim 4 or 5, it is characterised in that
The input terminal of the first voltage generative circuit or second voltage generative circuit is connected to the supply voltage.
7. the power amplification circuit as described in any one in claim 1 to 6, it is characterised in that
Also include control circuit, the control circuit according to the frequency of the input signal, to first electric current and the second electric current
In the magnitude of current of at least one party be adjusted.
8. power amplification circuit as claimed in any of claims 1 to 7 in one of claims, it is characterised in that
The second output transistor is also equipped with, second output transistor is amplified to the described first amplification signal, and exports the
Two amplify signal.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015215771A JP2017092526A (en) | 2015-11-02 | 2015-11-02 | Power amplifier circuit |
| JP2015-215771 | 2015-11-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106656064A true CN106656064A (en) | 2017-05-10 |
| CN106656064B CN106656064B (en) | 2020-02-21 |
Family
ID=58635717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610915606.7A Active CN106656064B (en) | 2015-11-02 | 2016-10-20 | Power amplifying circuit |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US9768738B2 (en) |
| JP (1) | JP2017092526A (en) |
| CN (1) | CN106656064B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108933574A (en) * | 2017-05-23 | 2018-12-04 | 株式会社村田制作所 | Power amplification circuit |
| CN109586674A (en) * | 2017-09-29 | 2019-04-05 | 株式会社村田制作所 | Power amplification circuit |
| CN109768775A (en) * | 2017-11-10 | 2019-05-17 | 株式会社村田制作所 | Power amplification circuit |
| CN110034731A (en) * | 2017-12-19 | 2019-07-19 | 株式会社村田制作所 | Power amplification circuit |
| CN110518883A (en) * | 2018-05-21 | 2019-11-29 | 株式会社村田制作所 | Power amplification circuit |
| CN113721691A (en) * | 2020-05-25 | 2021-11-30 | 株式会社村田制作所 | Bias circuit |
| CN113994590A (en) * | 2020-04-30 | 2022-01-28 | 新唐科技日本株式会社 | Power amplifying device |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10666200B2 (en) | 2017-04-04 | 2020-05-26 | Skyworks Solutions, Inc. | Apparatus and methods for bias switching of power amplifiers |
| US10700643B2 (en) * | 2017-09-22 | 2020-06-30 | Qualcomm Incorporated | Envelope-shaped bias for power amplifier |
| JP2019192987A (en) * | 2018-04-19 | 2019-10-31 | 株式会社村田製作所 | Control circuit of power amplifier |
| US11502647B2 (en) * | 2018-05-11 | 2022-11-15 | Sony Semiconductor Solutions Corporation | Amplifier |
| US10958222B2 (en) | 2018-06-15 | 2021-03-23 | Richwave Technology Corp. | Bias circuit |
| US10680565B2 (en) * | 2018-06-29 | 2020-06-09 | Qorvo Us, Inc. | Power amplifier system |
| JP2020027992A (en) * | 2018-08-10 | 2020-02-20 | 株式会社村田製作所 | Power amplifier circuit |
| WO2020063409A1 (en) * | 2018-09-27 | 2020-04-02 | Huawei Technologies Co., Ltd. | Amplifier with non-linearity cancellation |
| CN112753164B (en) * | 2018-10-17 | 2024-03-08 | 株式会社村田制作所 | Power amplifying circuit |
| TWI710210B (en) | 2019-06-13 | 2020-11-11 | 立積電子股份有限公司 | Bias device |
| TWI770969B (en) * | 2021-04-28 | 2022-07-11 | 立積電子股份有限公司 | Bias compensation circuit of amplifier |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009125555A1 (en) * | 2008-04-08 | 2009-10-15 | 三菱電機株式会社 | High-frequency amplifier |
| CN201365228Y (en) * | 2009-02-25 | 2009-12-16 | 陈红敏 | Pure post power amplifier with high fidelity, high linearity and broad frequency band |
| CN101764582A (en) * | 2008-12-24 | 2010-06-30 | 三星电机株式会社 | Systems and methods for self-mixing adaptive bias circuit for power amplifier |
| US7936219B2 (en) * | 2009-07-27 | 2011-05-03 | Mitsubishi Electric Corporation | Power amplifier bias circuit |
| CN104380598A (en) * | 2012-05-25 | 2015-02-25 | 株式会社村田制作所 | Power amplification circuit |
| US8994455B2 (en) * | 2013-02-19 | 2015-03-31 | Samsung Electro-Mechanics Co., Ltd. | Radio frequency amplifying apparatus having protection voltage varying function |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2003216835A1 (en) * | 2002-03-20 | 2003-10-08 | Roke Manor Research Limited | A bias circuit for a bipolar transistor |
| JP4519659B2 (en) * | 2005-01-06 | 2010-08-04 | ルネサスエレクトロニクス株式会社 | Bias circuit |
| JP2011160256A (en) * | 2010-02-02 | 2011-08-18 | Mitsubishi Electric Corp | Emitter-follower type bias circuit |
| US8138835B2 (en) * | 2010-02-11 | 2012-03-20 | Qualcomm, Incorporated | Wide band LNA with noise canceling |
| WO2012111274A1 (en) * | 2011-02-14 | 2012-08-23 | パナソニック株式会社 | High frequency power amplifier |
| US8791760B2 (en) * | 2011-06-21 | 2014-07-29 | Rf Micro Devices, Inc. | Closed loop bias control |
| KR101792271B1 (en) * | 2012-05-29 | 2017-11-01 | 삼성전기주식회사 | Bias circuit and power amplifier having the same |
| TWI467916B (en) * | 2012-11-14 | 2015-01-01 | Universal Scient Ind Shanghai | Electronic system, rf power amplifier and temperature compensation method thereof |
-
2015
- 2015-11-02 JP JP2015215771A patent/JP2017092526A/en active Pending
-
2016
- 2016-09-19 US US15/268,815 patent/US9768738B2/en active Active
- 2016-10-20 CN CN201610915606.7A patent/CN106656064B/en active Active
-
2017
- 2017-08-23 US US15/683,859 patent/US10224880B2/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009125555A1 (en) * | 2008-04-08 | 2009-10-15 | 三菱電機株式会社 | High-frequency amplifier |
| CN101764582A (en) * | 2008-12-24 | 2010-06-30 | 三星电机株式会社 | Systems and methods for self-mixing adaptive bias circuit for power amplifier |
| CN201365228Y (en) * | 2009-02-25 | 2009-12-16 | 陈红敏 | Pure post power amplifier with high fidelity, high linearity and broad frequency band |
| US7936219B2 (en) * | 2009-07-27 | 2011-05-03 | Mitsubishi Electric Corporation | Power amplifier bias circuit |
| CN104380598A (en) * | 2012-05-25 | 2015-02-25 | 株式会社村田制作所 | Power amplification circuit |
| US8994455B2 (en) * | 2013-02-19 | 2015-03-31 | Samsung Electro-Mechanics Co., Ltd. | Radio frequency amplifying apparatus having protection voltage varying function |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108933574B (en) * | 2017-05-23 | 2023-10-24 | 株式会社村田制作所 | Power amplifying circuit |
| CN108933574A (en) * | 2017-05-23 | 2018-12-04 | 株式会社村田制作所 | Power amplification circuit |
| CN109586674A (en) * | 2017-09-29 | 2019-04-05 | 株式会社村田制作所 | Power amplification circuit |
| CN109586674B (en) * | 2017-09-29 | 2023-09-22 | 株式会社村田制作所 | Power amplifying circuit |
| CN109768775B (en) * | 2017-11-10 | 2023-03-07 | 株式会社村田制作所 | Power amplifying circuit |
| CN109768775A (en) * | 2017-11-10 | 2019-05-17 | 株式会社村田制作所 | Power amplification circuit |
| CN110034731B (en) * | 2017-12-19 | 2023-03-14 | 株式会社村田制作所 | Power amplifying circuit |
| CN110034731A (en) * | 2017-12-19 | 2019-07-19 | 株式会社村田制作所 | Power amplification circuit |
| CN110518883B (en) * | 2018-05-21 | 2023-08-25 | 株式会社村田制作所 | Power amplifying circuit |
| CN110518883A (en) * | 2018-05-21 | 2019-11-29 | 株式会社村田制作所 | Power amplification circuit |
| CN113994590A (en) * | 2020-04-30 | 2022-01-28 | 新唐科技日本株式会社 | Power amplifying device |
| CN113721691B (en) * | 2020-05-25 | 2022-09-09 | 株式会社村田制作所 | Bias circuit |
| CN113721691A (en) * | 2020-05-25 | 2021-11-30 | 株式会社村田制作所 | Bias circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017092526A (en) | 2017-05-25 |
| US9768738B2 (en) | 2017-09-19 |
| US20170126183A1 (en) | 2017-05-04 |
| CN106656064B (en) | 2020-02-21 |
| US20170353162A1 (en) | 2017-12-07 |
| US10224880B2 (en) | 2019-03-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106656064A (en) | Power amplification circuit | |
| CN108111135B (en) | Power amplification circuit | |
| CN106100594B (en) | Power amplification circuit | |
| CN208337517U (en) | Power amplification circuit | |
| CN108880489A (en) | Power amplification circuit | |
| CN108011597A (en) | Envelope-tracking current biasing circuit and power amplifier apparatus | |
| CN110391788A (en) | The control circuit of power amplifier | |
| CN106330107B (en) | Low noise amplifier circuit | |
| CN104917475B (en) | A kind of adjustable gain power amplifier, gain adjusting method therefore and mobile terminal | |
| CN106208980B (en) | A kind of radio-frequency power amplifier biasing circuit and its implementation | |
| CN109039289A (en) | Power amplification circuit | |
| CN103166581A (en) | Radio frequency low noise amplifier with high linearity | |
| CN106357226A (en) | Power amplification module | |
| CN104904117B (en) | High-frequency amplifier circuit | |
| JP2020039053A (en) | Power amplifier circuit | |
| KR20160113349A (en) | Power amplifier | |
| CN110350881A (en) | Attenuator system | |
| CN107045374B (en) | Power amplification circuit | |
| CN104348424B (en) | The separation of the linearity with enhancing biases radio-frequency power amplifier | |
| CN1619950B (en) | Variable amplifier and mobile wireless terminal using same | |
| CN102457235B (en) | The pseudo-dynatron performance multiplying arrangement of sound and the pseudo-dynatron performance push-pull type of sound multiplying arrangement | |
| CN115940837A (en) | Power amplifier and electronic device | |
| CN110034731A (en) | Power amplification circuit | |
| WO2021056881A1 (en) | Compensation circuit for amplitude modulation to amplitude modulation of a radio frequency power amplifier | |
| CN111277234A (en) | Power amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |