CN106653983A - High power LCD chip packaging protection material - Google Patents
High power LCD chip packaging protection material Download PDFInfo
- Publication number
- CN106653983A CN106653983A CN201611223147.2A CN201611223147A CN106653983A CN 106653983 A CN106653983 A CN 106653983A CN 201611223147 A CN201611223147 A CN 201611223147A CN 106653983 A CN106653983 A CN 106653983A
- Authority
- CN
- China
- Prior art keywords
- lcd chip
- chip packaging
- protection material
- power lcd
- packaging protection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 20
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 16
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 13
- 229920001558 organosilicon polymer Polymers 0.000 claims abstract description 11
- OLLFKUHHDPMQFR-UHFFFAOYSA-N dihydroxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](O)(O)C1=CC=CC=C1 OLLFKUHHDPMQFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000004593 Epoxy Substances 0.000 claims description 10
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 9
- 239000003957 anion exchange resin Substances 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000005485 electric heating Methods 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 239000000376 reactant Substances 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000005292 vacuum distillation Methods 0.000 claims description 3
- 238000007664 blowing Methods 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 claims description 2
- 238000003760 magnetic stirring Methods 0.000 claims description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 3
- 125000003700 epoxy group Chemical group 0.000 abstract description 2
- 238000006068 polycondensation reaction Methods 0.000 abstract description 2
- 238000002834 transmittance Methods 0.000 abstract description 2
- 239000005022 packaging material Substances 0.000 abstract 2
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- -1 polysiloxane Polymers 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 229910001410 inorganic ion Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Epoxy Resins (AREA)
Abstract
The present invention discloses a high power LCD chip packaging protection material. Propyltrimethoxysilane and diphenyl silandiol are used as raw materials, an organic silicon polymer of high refractive index with phenyl and epoxy groups is prepared through polycondensation reaction, and the organic silicon polymer and methyl hexahydrophthalic anhydride are cured so as to obtain a transparent organic silicon packaging material. The organic silicon packaging material prepared through the method has high refractive index, high transmittance, good adhesion, and good thermal resistance and mechanical property, and can be used as the high power LCD chip packaging protection material.
Description
Technical field
The present invention relates to a kind of high-power LCD chip packaging protection material.
Background technology
As people pursue the color of display and show the pursuit of practicality, the flat board of liquid crystal technology before recent two decades
Display comes out, and monitor market there occurs earth-shaking change.But with the enhancing of practicality demand, transparence and soft
The Display Technique of change also comes out.The high-power LCD chip packaging protection material for commonly using at present is epoxy resin and organosilicon
Material, epoxy resin is cheap most widely used because of its, but is not suitable for the high-power LCD chip packaging protection materials of L.Prepare high
The core technology of the high-power LCD chip packaging protection material of refractive index is synthesis silicon phenyl polysiloxane.At present major part is with benzene
Base chlorosilane is raw material, is hydrolyzed and obtains phenyl polysiloxane.But this kind of method produces larger amount of hydrogen chloride, seriously corroded.
The content of the invention
To overcome the shortcomings of that prior art is above-mentioned, the invention provides a kind of high-power LCD chip packaging protection material, with
Propyl trimethoxy silicane and diphenyl silanediol are raw material, and the height with phenyl and epoxide group is prepared by polycondensation reaction
Refraction index organosilicon polymer, with this obtained organosilicon encapsulating material have higher refraction index, higher light transmittance,
Excellent cementability, good heat resistance and mechanical property, can be used for high-power LCD chip packaging protection material.
For achieving the above object, the technical scheme is that and devise a kind of high-power LCD chip packaging protection material,
It is made by the steps:
（1）, in the reactor sequentially add mass ratio be 1: 0.3～1: 1 propyl trimethoxy silicane, diphenyl silanediol and
Alkalescence anion-exchange resin D296R（Consumption is reactant gross mass 10%）.Thermostatical oil bath is warmed up to into 40～70 DEG C,
6～15h is reacted under magnetic stirring；
（2）, gained sample filtered, remove anion exchange resin D296R；
（3）And then at 140-160 DEG C, vacuum distillation removes low-boiling-point substance, obtains phenyl epoxy radicals organosilicon polymer；
（4）, in phenyl epoxy radicals organosilicon polymer obtained above add methyl hexahydrophthalic anhydride to be curing agent, triethylamine is
Accelerator, after stirring after vacuum defoamation, carries out solidification and high-power LCD chip encapsulation is obtained in electric heating constant-temperature blowing drying box
Protection materials.
Preferably, the condition of cure is 120 DEG C/3h.
Preferably, the consumption of curing agent is the 20-35% of phenyl epoxy radicals organosilicon polymer,
Preferably, the consumption of accelerator is the 2-8% of phenyl epoxy radicals organosilicon polymer.
The advantages of the present invention are：Alkalescence anion-exchange resin catalysis method, processing procedure is simple, only needs
Filtering just can separate catalyst from reaction system, and can reuse, both reduces cost, while being beneficial to
Environmental protection；In addition inorganic ions is not contained in product, with excellent insulating properties.
Specific embodiment
With reference to embodiment, the specific embodiment of the present invention is further described.Following examples are only used for more
Plus technical scheme is clearly demonstrated, and can not be limited the scope of the invention with this.
The technical scheme that the present invention is embodied as is：
A kind of high-power LCD chip packaging protection material, is made by the steps:
Propyl trimethoxy silicane, diphenyl silanediol and alkalescence that mass ratio is 1: 0.3～1: 1 are sequentially added in the reactor
Anion exchange resin D296R（Consumption is reactant gross mass 10%）.Thermostatical oil bath is warmed up to into 40～70 DEG C, in magnetic
Power stirring 6～15h of lower reaction；Gained sample is filtered, anion exchange resin D296R is removed；Then in 140-160
At DEG C, vacuum distillation removes low-boiling-point substance, obtains phenyl epoxy radicals organosilicon polymer；It is organic in phenyl epoxy radicals obtained above
Methyl hexahydrophthalic anhydride is added to be curing agent in silicon polymer, triethylamine is accelerator, after stirring after vacuum defoamation, in electric heating
Constant temperature blast drying oven carries out solidification and high-power LCD chip packaging protection material is obtained.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, on the premise of without departing from the technology of the present invention principle, some improvements and modifications can also be made, these improvements and modifications
Also should be regarded as protection scope of the present invention.
Claims (4)
1. a kind of high-power LCD chip packaging protection material, it is characterised in that be made by the steps：
（1）, in the reactor sequentially add mass ratio be 1: 0.3～1: 1 propyl trimethoxy silicane, diphenyl silanediol and
Alkalescence anion-exchange resin D296R（Consumption is reactant gross mass 10%）.
2. thermostatical oil bath is warmed up to into 40～70 DEG C, 6～15h is reacted under magnetic stirring；
（2）, gained sample filtered, remove anion exchange resin D296R；
（3）And then at 140-160 DEG C, vacuum distillation removes low-boiling-point substance, obtains phenyl epoxy radicals organosilicon polymer；
（4）, in phenyl epoxy radicals organosilicon polymer obtained above add methyl hexahydrophthalic anhydride to be curing agent, triethylamine is
Accelerator, after stirring after vacuum defoamation, carries out solidification and high-power LCD chip encapsulation is obtained in electric heating constant-temperature blowing drying box
Protection materials.
3. high-power LCD chip packaging protection material according to claim 2, it is characterised in that step（4）Described in it is solid
Change condition is 120 DEG C/3h.
4. high-power LCD chip packaging protection material according to claim 2, it is characterised in that step（4）Described in it is solid
The consumption of agent is the 20-35% of phenyl epoxy radicals organosilicon polymer, and the consumption of the accelerator is phenyl epoxy silicones
The 2-8% of polymer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611223147.2A CN106653983A (en) | 2016-12-27 | 2016-12-27 | High power LCD chip packaging protection material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611223147.2A CN106653983A (en) | 2016-12-27 | 2016-12-27 | High power LCD chip packaging protection material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106653983A true CN106653983A (en) | 2017-05-10 |
Family
ID=58832282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611223147.2A Pending CN106653983A (en) | 2016-12-27 | 2016-12-27 | High power LCD chip packaging protection material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106653983A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101921571A (en) * | 2010-08-13 | 2010-12-22 | 东莞市英迈新能源材料有限公司 | High-temperature resistant packaging adhesive for high-power LED lamp and preparation method thereof |
| CN102504270A (en) * | 2011-10-28 | 2012-06-20 | 中科院广州化学有限公司 | High-performance organic silicon electronic pouring sealant and preparation method and application thereof |
| US9407317B2 (en) * | 2013-04-03 | 2016-08-02 | Umm Al-Qura University | Differential ultra-wideband indoor positioning method |
-
2016
- 2016-12-27 CN CN201611223147.2A patent/CN106653983A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101921571A (en) * | 2010-08-13 | 2010-12-22 | 东莞市英迈新能源材料有限公司 | High-temperature resistant packaging adhesive for high-power LED lamp and preparation method thereof |
| CN102504270A (en) * | 2011-10-28 | 2012-06-20 | 中科院广州化学有限公司 | High-performance organic silicon electronic pouring sealant and preparation method and application thereof |
| US9407317B2 (en) * | 2013-04-03 | 2016-08-02 | Umm Al-Qura University | Differential ultra-wideband indoor positioning method |
Non-Patent Citations (1)
| Title |
|---|
| 李媛等: "LED封装用有机硅材料的制备与性能", 《高分子材料科学与工程》 * |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170510 |