CN106653922B - 一种ⅲ‑ⅴ族半导体的太阳能电池结构及其制作方法 - Google Patents

一种ⅲ‑ⅴ族半导体的太阳能电池结构及其制作方法 Download PDF

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CN106653922B
CN106653922B CN201610954774.7A CN201610954774A CN106653922B CN 106653922 B CN106653922 B CN 106653922B CN 201610954774 A CN201610954774 A CN 201610954774A CN 106653922 B CN106653922 B CN 106653922B
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吴宝嘉
王俊盈
赵晨
谷雨时
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Yanbian University
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Abstract

本发明公开了一种Ⅲ‑Ⅴ族半导体的太阳能电池结构及其制作方法，包括保护壳以及从下到上依次设置在保护壳内透明基板、非晶硅层、Ⅲ‑Ⅴ族多晶半导体层、透明导光层、吸光层，保护壳的底端活动安装有保护底板，吸光层呈凹向的弧形设置，与透明导光层上的凹槽为吻合；透明导光层的表面和内部开设有多个微孔，将入射光线水平导向至Ⅲ‑Ⅴ族多晶半导体层中。本发明采用弧形的吸光层、透明导光层以及透明基板作为结构，不仅增加了其使用寿命，降低了总成本，而且增加吸光面积，有效的吸收光能，提高太阳能电池对光的转换效率。

Description

一种Ⅲ-Ⅴ族半导体的太阳能电池结构及其制作方法
技术领域
本发明涉及太阳能电池领域，具体是一种Ⅲ-Ⅴ族半导体的太阳能电池结构及其制作方法。
背景技术
自二十世纪到二十一世纪，随着人倾生活的进步，对于能源的需求是愈来愈高，但由于地球可用资源有限，为免资源耗尽，太阳能产业应运而生，太阳能是一种绿色环保的永续能源，开发太阳能电池可以将光能储存从而得到利用。太阳能电池是半导体吸收光量或光子后，电子被激发并发生跃迁，激发的电子驱动电路从而形成电池半导体。目前使用的各式太阳能电池材料包括单晶硅、多晶硅、非晶硅等半导体种类或Ⅲ-Ⅴ族、二六族的元素链接的材料。
Ⅲ-Ⅴ族太阳能电池，又称为聚光型太阳能电池，具有远高于硅晶太阳能电池的光电转换效率。Ⅲ-Ⅴ族太阳能电池是以在Ⅲ-Ⅴ族基板上，以化学气相沉积法形成薄膜，此类薄膜太阳能电池结构很早就应用在人造卫星的太阳能电池板上，具有可吸收光谱范围极广且转换效率可高逾30％、且寿命较其它种类太阳能电池长、性质稳定的优点。Ⅲ-Ⅴ族太阳能电池尽管不需要用到硅晶，但芯片成本仍然相对高昂，而且目前的太阳能电池没有相对应的保护措施，致使其寿命仍然不长；还有大多的太阳能电池都是平板的结构，从而使得部分太阳光反射造成损失等因素，造成其光电转换效率无法进一步提升。
发明内容
本发明的目的在于提供一种Ⅲ-Ⅴ族半导体的太阳能电池结构及其制作方法，以解决上述背景技术中提出的问题。
为实现上述目的，本发明提供如下技术方案：
一种Ⅲ-Ⅴ族半导体的太阳能电池结构，包括保护壳以及设置在保护壳内的
一透明基板，设置在保护壳内部下方；
一非晶硅层，设于该透明基板上；
一Ⅲ-Ⅴ族多晶半导体层，设于非晶硅层上，Ⅲ-Ⅴ族多晶半导体层包含N型半导体层、本征半导体层和P型半导体层，本征半导体层设置在N型半导体层和P型半导体层之间；及
一透明导光层，设于Ⅲ-Ⅴ族多晶半导体层上，且该透明导光层的表面和内部开设有多个微孔，将入射光线水平导向至Ⅲ-Ⅴ族多晶半导体层中；透明导光层上设有弧形的凹槽；
一吸光层，设于透明导光层上，且设置在保护壳的顶端，吸光层呈凹向的弧形设置，与透明导光层上的凹槽为吻合；
一保护底板，活动安装在保护壳的底端，便于拆卸。
作为本发明进一步的方案：该吸光层为V型槽、波浪型或折角式的吸光板。
作为本发明进一步的方案：该透明导导光层为氧化铟锡、氧化锌铝或氧化锌锡的透明导光导电氧化物。
作为本发明进一步的方案：所述N型半导体层为N型或P型半导体，P型半导体层为对应的P型或N型半导体。
作为本发明再进一步的方案：该透明基板的材质为玻璃、石英、透明塑胶或单晶氧化铝透明材质。
一种所述的Ⅲ-Ⅴ族半导体的太阳能电池结构的制作方法，步骤如下：将非晶硅层利用电浆辅助化学气相沉积法形成于透明基板上，将Ⅲ-Ⅴ族多晶半导体层利用金属有机化学气相沉积法依次形成于非晶硅层上，将透明导光层利用金属有机化学气相沉积法形成于Ⅲ-Ⅴ族多晶半导体层上，将吸光层设置在透明导光层上并进行固定，整体放置于保护壳内，并进行再次固定，然后将保护底板活动安装在保护壳的底端。
与现有技术相比，本发明的有益效果是：
本发明采用弧形的吸光层、透明导光层以及透明基板作为结构，不仅增加了其使用寿命，降低了总成本，而且增加吸光面积，有效的吸收光能，提高太阳能电池对光的转换效率。
附图说明
图1为Ⅲ-Ⅴ族半导体的太阳能电池结构的整体结构示意图。
图2为Ⅲ-Ⅴ族半导体的太阳能电池结构的具体结构示意图。
图中：1-吸光层；2-透明导光层；30-Ⅲ-Ⅴ族多晶半导体层；3-N型半导体层；4-本征半导体层；5-P型半导体层；6-非晶硅层；7-透明基板；8-保护壳；9-保护底板。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1～2，本发明实施例中，一种Ⅲ-Ⅴ族半导体的太阳能电池结构，包括保护壳8以及设置在保护壳8内的透明基板7、非晶硅层6、Ⅲ-Ⅴ族多晶半导体层30、透明导光层2、吸光层1、保护底板9，透明基板7设置在保护壳8内部下方，非晶硅层6设置在透明基板7上，Ⅲ-Ⅴ族多晶半导体层30设置在非晶硅层6上，透明导光层2设置在Ⅲ-Ⅴ族多晶半导体层30上，吸光层1设置在透明导光层2上，且吸光层1设置在保护壳8的顶端，保护底板9，活动安装在保护壳8的底端，便于拆卸。
吸光层1呈凹向的弧形设置，与透明导光层2上的凹槽为吻合；该吸光层1为V型槽、波浪型或折角式的吸光板，从而有利于吸光，提高光的转化率。
Ⅲ-Ⅴ族多晶半导体层30包含N型半导体层3、本征半导体层4和P型半导体层5，本征半导体层4设置在N型半导体层3和P型半导体层5之间，N型半导体层3为N型或P型半导体，P型半导体层5为对应的P型或N型半导体。
透明导光层2的表面和内部开设有多个微孔，将入射光线水平导向至Ⅲ-Ⅴ族多晶半导体层30中；透明导光层2上设有弧形的凹槽；透明导光层2采用氧化铟锡、氧化锌铝或氧化锌锡的透明导光导电氧化物。而对于透明基板7则采用玻璃、石英、透明塑胶或单晶氧化铝透明材质。
该Ⅲ-Ⅴ族半导体的太阳能电池结构的制作步骤如下：将非晶硅层利用电浆辅助化学气相沉积法形成于透明基板上，将Ⅲ-Ⅴ族多晶半导体层利用金属有机化学气相沉积法依次形成于非晶硅层上，即依次形成N型半导体层、本征半导体层和P型半导体层，将透明导光层利用金属有机化学气相沉积法形成于Ⅲ-Ⅴ族多晶半导体层上，将吸光层设置在透明导光层上并进行固定，整体放置于保护壳内，并进行再次固定，然后将保护底板活动安装在保护壳的底端。
对于本领域技术人员而言，显然本发明不限于上述示范性实施例的细节，而且在不背离本发明的精神或基本特征的情况下，能够以其他的具体形式实现本发明。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本发明的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。

Claims (6)

1.一种Ⅲ-Ⅴ族半导体的太阳能电池结构，其特征在于，包括保护壳以及设置在保护壳内的
一透明基板，设置在保护壳内部下方；
一非晶硅层，设于该透明基板上；
一Ⅲ-Ⅴ族多晶半导体层，设于非晶硅层上，Ⅲ-Ⅴ族多晶半导体层包含N型半导体层、本征半导体层和P型半导体层，本征半导体层设置在N型半导体层和P型半导体层之间；及
一透明导光层，设于Ⅲ-Ⅴ族多晶半导体层上，且该透明导光层的表面和内部开设有多个微孔，将入射光线水平导向至Ⅲ-Ⅴ族多晶半导体层中；透明导光层上设有弧形的凹槽；
一吸光层，设于透明导光层上，且设置在保护壳的顶端，吸光层呈凹向的弧形设置，与透明导光层上的凹槽为吻合；
一保护底板，活动安装在保护壳的底端，便于拆卸。
2.根据权利要求1所述的Ⅲ-Ⅴ族半导体的太阳能电池结构，其特征在于，该吸光层为V型槽、波浪型或折角式的吸光板。
3.根据权利要求1所述的Ⅲ-Ⅴ族半导体的太阳能电池结构，其特征在于，该透明导光层为氧化铟锡、氧化锌铝或氧化锌锡的透明导光导电氧化物。
4.根据权利要求1所述的Ⅲ-Ⅴ族半导体的太阳能电池结构，其特征在于，所述N型半导体层为N型半导体，P型半导体层为P型半导体。
5.根据权利要求1所述的Ⅲ-Ⅴ族半导体的太阳能电池结构，其特征在于，该透明基板的材质为玻璃、石英、透明塑胶或单晶氧化铝透明材质。
6.一种如权利要求1所述的Ⅲ-Ⅴ族半导体的太阳能电池结构的制作方法，其特征在于，步骤如下：将非晶硅层利用电浆辅助化学气相沉积法形成于透明基板上，将Ⅲ-Ⅴ族多晶半导体层利用金属有机化学气相沉积法依次形成于非晶硅层上，将透明导光层利用金属有机化学气相沉积法形成于Ⅲ-Ⅴ族多晶半导体层上，将吸光层设置在透明导光层上并进行固定，整体放置于保护壳内，并进行再次固定，然后将保护底板活动安装在保护壳的底端。
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