CN106653901A - Crystalline silicon solar cell module - Google Patents
Crystalline silicon solar cell module Download PDFInfo
- Publication number
- CN106653901A CN106653901A CN201611093306.1A CN201611093306A CN106653901A CN 106653901 A CN106653901 A CN 106653901A CN 201611093306 A CN201611093306 A CN 201611093306A CN 106653901 A CN106653901 A CN 106653901A
- Authority
- CN
- China
- Prior art keywords
- solar battery
- crystal silicon
- silicon solar
- piece
- concentrating solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 13
- 229920000098 polyolefin Polymers 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 239000013078 crystal Substances 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- 230000015556 catabolic process Effects 0.000 claims description 9
- 238000006731 degradation reaction Methods 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 239000005336 safety glass Substances 0.000 claims description 6
- 230000008595 infiltration Effects 0.000 claims description 3
- 238000001764 infiltration Methods 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229920001169 thermoplastic Polymers 0.000 claims description 3
- 239000004416 thermosoftening plastic Substances 0.000 claims description 3
- 238000005243 fluidization Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 8
- 230000006698 induction Effects 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000002834 transmittance Methods 0.000 abstract description 2
- 238000010248 power generation Methods 0.000 abstract 2
- 238000005538 encapsulation Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a crystalline silicon solar cell module. The crystalline silicon solar cell module adopts a polyolefin material to package, and a battery slice adopts a concentrating solar energy cell. On the basis of an existing crystalline silicon module technology, the polyolefin material is used as a package material, the reliability of the module is improved, the effect of potential-resistant induction attenuation is very obvious, so that the application range of the crystalline silicon module is expanded, and no power attenuation of the module is generated in some relatively humid and severe environments. In the crystalline silicon solar cell module, the polyolefin material is used as the package material, the moisture transmittance is reduced, the potential-resistant induction attenuation performance is improved, the power generation quantity of a subsequent system is improved, the investment return benefit is maximum, and with the adoption of the concentrating solar energy cell, the power generation efficiency of the module is effectively improved.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of crystal silicon solar battery component.
Background technology
High voltage between the circuit being present in Crystalline Silicon PV Module and its grounded metal frame, can cause component
The decay of photovoltaic performance, title is this to decay to potential induction attenuation i.e. PID.It is generally acknowledged that battery is through encapsulating material and component side
The path that frame is formed caused by leakage current be the main cause for causing potential induction attenuation phenomenon, this just determines package material
Material and cell piece play critical effect in potential induction attenuation.Crystalline Silicon PV Module traditional at present mostly uses EVA
Encapsulation, does not typically have anti-PID performances, even if there is the anti-PID effects in part, but effect is not also obvious；For cell piece
Preparation also only focuses on the raising of efficiency all the time, seldom considers the anti-PID performances of cell piece.In actual power plant application, use
EVA and common batteries piece encapsulation component, its actual runnability often because PID impact and be difficult to it is satisfactory, it is existing
Multiple technological improvement is carried out to this in technology and has not all obtained obvious effect；Therefore the excellent anti-PID of a comparison is developed
Battery component it is very necessary, to meet real exigence.
The content of the invention
The technical problem to be solved is the defect for overcoming prior art, there is provided a kind of to overcome the anti-of the problems referred to above
Potential induction attenuation crystal silicon solar battery component.
In order to solve the above problems, the technical solution used in the present invention is：A kind of crystal silicon solar battery component, it is described
Crystal silicon solar component is followed successively by from top to bottom：Header board, ultraviolet infiltration type TPO, cell piece, ultraviolet cut
Only type thermoplastics type polyolefin, backboard and the terminal box below backboard, the cell piece is concentrating solar battery piece,
The thin grid line corresponding part in front of the concentrating solar battery piece is effective light area, the concentrating solar battery piece
Front both sides are main gate line, and the luminous energy for being injected into effective light area is effectively converted to again electric energy, and the electric current of opto-electronic conversion passes through
The thin grid line in front is reached in the main gate line on both sides after being collected, if being evenly distributed with along its length in the main gate line
The dry diversion column with conducting function, the diversion column through concentrating solar battery piece crystal silicon substrate and with the optically focused sun
Backplate A of energy cell piece is connected, and the diversion column conducts the electric current that the thin grid line in front is collected to backplate A, makees
For a pole of concentrating solar battery piece, the concentrating solar battery piece back side, corresponding backplate B in effective light area
As an other pole of concentrating solar battery piece.
Preferably, 0.6 ± 0.05mm of the polyolefin package thickness.The component resisting potential induced degradation performance is (wet
Spend 85 degree of 85% temperature -1000 volts of pressurization) under the conditions of the decay of 1000h hours less than 5%, and under conditions of traditional components are same
96h just decays more than 30%, more have very reach 80%-90%.
Preferably, the cell piece of the crystal silicon solar battery component is with resisting potential induced degradation dielectric layer
Cell piece, to replace common batteries piece to increase the effect of resisting potential induced degradation.
Preferably, the header board of the crystal silicon solar battery component is the low iron safety glass of ultrawhite, the transmission of its light
Rate reaches 92%-94%, improves the utilization ratio of luminous energy.
Preferably, the one side of the low iron safety glass ingress of air of the ultrawhite is provided with anti-reflection film, light is further improved
Can conversion efficiency.
Preferably, the backboard of the crystal silicon solar battery component be macromolecular material, with improve service life and
Controllability, reduces entirety and uses overhead cost.
Preferably, isolated area is provided between backplate A and backplate B, effective light area
Edge is passivation region, to improve the conversion efficiency of cell piece.
The crystal silicon solar battery component has that reliability is high, cheap, encapsulation performance is high, potential induction attenuation is existing
The advantages of as substantially reducing.
Description of the drawings
Fig. 1 is a kind of structural representation of crystal silicon solar battery component of the present invention.
Fig. 2 is the structural representation of heretofore described concentrating solar battery piece.
Fig. 3 is the front view of Fig. 2.
Fig. 4 is the rearview of Fig. 2.
Specific embodiment
With reference to specific embodiments and the drawings, the present invention is described in further detail.
As Figure 1-4, a kind of crystal silicon solar battery component, the crystal silicon solar component is from top to bottom successively
For：Header board 1, ultraviolet infiltration type TPO 2, cell piece 3, ultraviolet cutoff type thermoplastics type polyolefin 4, backboard 5 with
And the terminal box 6 below backboard, the cell piece 3 be concentrating solar battery piece, the concentrating solar battery piece
The thin corresponding part of grid line 32 in front be effective light area 33, the front both sides of the concentrating solar battery piece are main gate line
34, the luminous energy for being injected into effective light area 33 is effectively converted to again electric energy, and the electric current of opto-electronic conversion passes through the thin grid line 32 in front
Reach after being collected in the main gate line 34 on both sides, be evenly distributed with along its length in the main gate line 34 and some have
The diversion column 35 of conducting function, the diversion column 35 through concentrating solar battery piece crystal silicon substrate 31 and with the optically focused sun
Backplate A36 of energy cell piece is connected, and the diversion column 35 conducts the electric current that the thin grid line 32 in front is collected to backplate
On A36, as a pole of concentrating solar battery piece, the concentrating solar battery piece back side, the correspondence of effective light area 33
Backplate B37 as concentrating solar battery piece an other pole, between backplate A36 and backplate B37
Isolated area 38 is provided with, the edge of effective light area 33 is passivation region 39, to improve the conversion efficiency of cell piece.
On the basis of existing crystalline silicon component technology, using polyolefine material as encapsulating material, component is increased
Reliability, resisting potential induced degradation effect is clearly, moister at some so as to extend the range of application of crystalline silicon component
Under rugged environment, the equal inactivity decay of component reduces water vapor transmittance, increases the resisting potential induced degradation performance of component, increases
Plus the generated energy of later stage system, investment repayment interests maximum.
In actual applications, 0.6 ± 0.05mm of the polyolefin package thickness.The component resisting potential induced degradation performance exists
The decay of 1000h hours is less than 5% under the conditions of (85% temperature of humidity, 85 degree of -1000 volts of pressurization), and the same condition of traditional components
Lower 96h just decays more than 30%, more have very reach 80%-90%.
In certain embodiments, the cell piece of the crystal silicon solar battery component is to be situated between with resisting potential induced degradation
The cell piece of matter layer, to replace common batteries piece to increase the effect of resisting potential induced degradation.
In certain embodiments, the header board of the crystal silicon solar battery component be the low iron safety glass of ultrawhite, its light
Transmitance reach 92%-94%, improve the utilization ratio of luminous energy.
In certain embodiments, the one side of the low iron safety glass ingress of air of the ultrawhite is provided with anti-reflection film, further
Improve light energy use efficiency.
In certain embodiments, the backboard of the crystal silicon solar battery component is macromolecular material, is used with improving
Life-span and controllability, reduce entirety and use overhead cost.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (7)
1. a kind of crystal silicon solar battery component, it is characterised in that：The crystal silicon solar component is followed successively by from top to bottom：
Header board, ultraviolet infiltration type TPO, cell piece, ultraviolet cutoff type thermoplastics type's polyolefin, backboard and it is arranged on
Terminal box below backboard, the cell piece be concentrating solar battery piece, the thin grid in front of the concentrating solar battery piece
Line corresponding part is effective light area, and the front both sides of the concentrating solar battery piece are main gate line, are injected into and effectively receive
The luminous energy in light region is effectively converted to again electric energy, and the electric current of opto-electronic conversion reaches both sides after being collected by the thin grid line in front
In main gate line, some diversion columns with conducting function are evenly distributed with along its length in the main gate line, it is described to lead
Fluidization tower runs through the crystal silicon substrate of concentrating solar battery piece and is connected with backplate A of concentrating solar battery piece, described
Diversion column conducts the electric current that the thin grid line in front is collected to backplate A, described as a pole of concentrating solar battery piece
The concentrating solar battery piece back side, corresponding backplate B in effective light area are used as other the one of concentrating solar battery piece
Pole.
2. crystal silicon solar battery component according to claim 1, it is characterised in that the polyolefin package thickness
0.6±0.05mm。
3. crystal silicon solar battery component according to claim 2, it is characterised in that the crystal silicon solar energy battery
The cell piece of component is the cell piece with resisting potential induced degradation dielectric layer.
4. crystal silicon solar battery component according to claim 1, it is characterised in that the crystal silicon solar energy battery
The header board of component is the low iron safety glass of ultrawhite, and the transmitance of its light reaches 92%-94%.
5. crystal silicon solar battery component according to claim 4, it is characterised in that the low iron safety glass of the ultrawhite
The one side of ingress of air is provided with anti-reflection film.
6. crystal silicon solar battery component according to claim 1, it is characterised in that the crystal silicon solar energy battery
The backboard of component is macromolecular material.
7. crystal silicon solar battery component according to claim 1, it is characterised in that backplate A and the back side
Isolated area is provided between electrode B, the edge of effective light area is passivation region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611093306.1A CN106653901A (en) | 2016-12-01 | 2016-12-01 | Crystalline silicon solar cell module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611093306.1A CN106653901A (en) | 2016-12-01 | 2016-12-01 | Crystalline silicon solar cell module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106653901A true CN106653901A (en) | 2017-05-10 |
Family
ID=58814073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611093306.1A Pending CN106653901A (en) | 2016-12-01 | 2016-12-01 | Crystalline silicon solar cell module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106653901A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108462458A (en) * | 2018-04-25 | 2018-08-28 | 嘉兴能发电子科技有限公司 | A kind of anti-attenuation polysilicon chip |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203589044U (en) * | 2013-10-09 | 2014-05-07 | 山东力诺太阳能电力股份有限公司 | P-type double-faced solar cell |
| CN204230263U (en) * | 2014-09-26 | 2015-03-25 | 中利腾晖光伏科技有限公司 | A kind of anti-PID crystal silicon solar battery component |
| CN105514185A (en) * | 2015-12-18 | 2016-04-20 | 四川钟顺太阳能开发有限公司 | Medium- and low-magnification concentrator solar cell |
-
2016
- 2016-12-01 CN CN201611093306.1A patent/CN106653901A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203589044U (en) * | 2013-10-09 | 2014-05-07 | 山东力诺太阳能电力股份有限公司 | P-type double-faced solar cell |
| CN204230263U (en) * | 2014-09-26 | 2015-03-25 | 中利腾晖光伏科技有限公司 | A kind of anti-PID crystal silicon solar battery component |
| CN105514185A (en) * | 2015-12-18 | 2016-04-20 | 四川钟顺太阳能开发有限公司 | Medium- and low-magnification concentrator solar cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108462458A (en) * | 2018-04-25 | 2018-08-28 | 嘉兴能发电子科技有限公司 | A kind of anti-attenuation polysilicon chip |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170510 |
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