CN106653893A - 基于多孔氮化镓的紫外光电探测器及制备方法 - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 48
- 229910052733 gallium Inorganic materials 0.000 claims description 48
- 150000004767 nitrides Chemical class 0.000 claims description 47
- 229910002601 GaN Inorganic materials 0.000 claims description 33
- 239000010931 gold Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 9
- 239000002019 doping agent Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000006056 electrooxidation reaction Methods 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 abstract description 3
- 238000003475 lamination Methods 0.000 abstract 1
- 230000001795 light effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 29
- 238000001514 detection method Methods 0.000 description 8
- 239000000306 component Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
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Abstract
本发明提供了一种多孔氮化镓的紫外光电探测器，包括：衬底；缓冲层，位于所述衬底之上；n型多孔氮化镓层，位于所述缓冲层之上；一对电极，分别叠置于所述型多孔氮化镓层之上。此外，本发明还提供了一种多孔氮化镓的紫外光电探测器的制备方法，包括：在衬底上生长缓冲层；在缓冲层上制备n型多孔氮化镓层；在n型多孔氮化镓层上生长一对电极。本发明采用多孔氮化镓结构，使得氮化镓与电极形成的肖特基结界面处会有大量的表面态密度，降低结势垒高度，增强光效应。
Description
技术领域
本发明涉及光电探测器技术领域，尤其涉及一种基于多孔氮化镓(GaN)的紫外光电探测器及制备方法。
背景技术
紫外光探测器是紫外预警系统，紫外成像系统的核心组成部分，氮化镓是一种优良的紫外光电探测器材料。在紫外探测领域，可应用于可见光盲波段(小于380nm)的材料主要是硅(Si)。
Si的禁带宽度为1.12eV左右，其光响应波段覆盖紫外光到可见光到近红外光波段。因此，Si基探测器在用于紫外光探测时，其对可见光及近红外光的光电响应会成为一种强烈的背景噪声。为了排除这种背景噪声，用于紫外光探测的Si基光电探测器通常需要配合紫外滤波片使用。但滤波片引入会降低器件的响应度，且增加器件的复杂性和成本，降低系统的可靠性，同时还会面对器件小型化及集成化的问题。
GaN的禁带宽度为3.43eV左右，这种宽禁带使得GaN本身不会对可见光和近红外光有响应，即GaN具有本征的紫外吸收窗口，不需要加入额外的滤波片。因此，基于GaN的紫外光电探测器在器件小型化及集成化上，比Si更具优势。
GaN是一种直接带隙半导体，相比于间接带隙的半导体Si，具有带边光吸收系数高，带边截止特性显著的特点。
相比于Si，GaN具有更快的载流子饱和漂移速度，在紫外光波段具有更高的吸收系数。因此，GaN更有利于制作高频高响应度的紫外光电探测器。同时GaN还具有极高的热稳定性及化学稳定性，并且具有较强的抗辐照能力，这使得GaN基光电探测器可在极端的条件下工作。
虽然GaN材料具有高的光吸收系数，但从目前报道过的GaN基光电探测器的性能来看，其量子效率，响应度及探测度依然较低，无法满足实际应用的需求，尤其是弱紫外光探测的需求。
发明内容
(一)要解决的技术问题
本发明的目的在于提供一种基于多孔氮化镓的紫外光电探测器，以解决上述的至少一项技术问题。
(二)技术方案
本发明提供了一种基于多孔氮化镓的紫外光电探测器，包括：
衬底；
缓冲层，位于所述衬底之上；
n型多孔氮化镓层，位于所述缓冲层之上；
一对电极，分别叠置于所述型多孔氮化镓层之上。
优选地，所述n型多孔氮化镓层中可以包含掺杂剂，掺杂剂包括硅烷。
优选地，所述n型多孔氮化镓层可以并入有Al组分。
优选地，所述n型多孔氮化镓层的多孔孔径可以为1nm～100nm。
优选地，所述缓冲层材料可以包括石墨烯、氮化镓或氧化锌。
优选地，所述电极可以为镍/金、钛/金、铂/金或钛/铝电极。
优选地，所述电极形状包括插指状、圆柱状、三角状或长方体状。
优选地，所述衬底的材料可以为蓝宝石、硅、碳化硅或者玻璃，衬底结构为平面或图形。
基于同一发明构思，本发明还提供了一种基于多孔氮化镓的紫外光电探测器的制备方法，包括：
S1、在衬底上生长缓冲层；
S2、在缓冲层上制备n型多孔氮化镓层；
S3、在n型多孔氮化镓层上生长一对电极。
优选地，步骤S2中，所述n型多孔氮化镓层可以通过对氮化镓进行电化学腐蚀或热退火转化得到。
(三)有益效果
多孔结构的GaN具有极大的表面-体积比，而表面会引入表面态。因此在，GaN与金属电极形成的肖特基结界面处会有大量的表面态密度。在多孔氮化镓受到紫外光照射后，在这些界面处存在的大量表面态会捕获大量光生空穴，并在界面集聚。这些大量集聚的光生空穴，会使得GaN与金属形成的肖特基结势垒高度大大降低，从而使得越过势垒的热电子大大增多，并得到极大的光电流。相比于常规的基于薄膜GaN材料的紫外光电探测器，这种基于多孔结构的GaN基光电探测在有光照后，会有更强的光电响应。
附图说明
图1为本发明实施例的基于多孔氮化镓的紫外光电探测器的纵剖面结构示意图；
图2为本发明实施例的基于多孔氮化镓的紫外光电探测器横截面扫描电子显微镜示意图；
图3为本发明实施例的基于多孔氮化镓的紫外光电探测器在340nm的紫外光照射下的光响应度及探测度随电压的变化曲线图；
图4为基于多孔氮化镓的紫外光电探测器的制备方法流程图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本发明作进一步的详细说明。
图1为本发明实施例的基于多孔氮化镓紫外光电探测器的纵剖面结构示意图，如图1所示，基于多孔氮化镓的紫外光电探测器自下而上包括：衬底10、缓冲层11、n型多孔氮化镓层12和一对电极13。
所述衬底10的材料为蓝宝石、硅、碳化硅(SiC)或者玻璃，衬底10结构为平面或图形，本发明实施例中选择碳化硅作为紫外光电探测器的衬底10。
所述缓冲层11位于所述衬底10之上，缓冲层11材料包括石墨烯、氮化镓或氧化锌。本发明实施例的缓冲层11的制备工艺为：以高纯氨气作为氮源，三甲基镓或三乙基镓作为Ga源，先低温生长GaN形核层，再高温生长非故意掺杂GaN层。
所述n型多孔氮化镓层12，位于所述缓冲层11之上；所述n型多孔氮化镓层12中包含掺杂剂，掺杂剂包括硅烷。所述n型多孔氮化镓层12通过对氮化镓进行电化学腐蚀或热退火转化得到。更进一步地，所述n型多孔氮化镓层12的孔径优选为1nm～100nm。此外，通过在n型多孔氮化镓层12中并入Al组分，组成AlGaN三元化合物半导体。通过调节Al组分，可以调节AlGaN的禁带宽度，使其可以实现日盲波段(小于280nm)的探测。
所述一对电极13，分别叠置于所述型多孔氮化镓层之上，且互不连接。所述电极13为镍/金(Ni/Au)、钛/金(Ti/Au)、铂/金(Pt/Au)或钛/铝(Ti/Al)电极。本发明实施例采用Ni/Au作为电极13。
本发明实施例提供的基于多孔氮化镓的紫外光电探测器为金属-半导体-金属型光电探测器，电子从一电极流动至n型多孔氮化镓层12，最后流向另一电极。此外，所述电极13形状包括插指状、圆柱状、三角状或长方体状，优选为插指状，可以增强本实施例中金属-半导体-金属型光电探测器的电流流动速度，增大电压。
此外，其它可实施的器件结构还包括肖特基势垒型光电探测器及p-i-n型光电探测器。
图2为本发明实施例的基于多孔氮化镓的紫外光电探测器横截面扫描电子显微镜示意图，如图2所示，图2以500nm为参考比例，所述多孔GaN的横截面的孔的形貌介于三角形和圆形之间，所述n型多孔氮化镓层12的孔径优选为1nm～100nm。在本实施例中，GaN平均孔径约为40nm。此外，所述多孔GaN形状大小可以不一致，不均匀排列。
图3为本发明实施例的基于多孔GaN的紫外光电探测器在340nm的紫外光照射下的光响应度及探测度随电压的变化曲线图，如图3所示，所述紫外光电探测器(PD_A)在光功率密度为1.68毫瓦每平方厘米(mW/cm2)的340nm的紫外光照射下的光响应度(Responsivity)及探测度(specific detectivity)随电压(Voltage)的变化曲线。在1V偏压下，响应度大于13000安培每瓦特(A/W)，探测度约为1.0×1014琼斯(Jones)。由此可见，该基于多孔GaN的紫外光电探测器的光响应度及探测度远远大于现有的GaN基光电探测器。
图4为本发明实施的基于多孔氮化镓的紫外光电探测器的制备方法流程图，如图4所示，包括：
S1、在衬底10上生长缓冲层11；
S2、在缓冲层11上制备n型多孔氮化镓层12；
S3、在n型多孔氮化镓层12上生长一对电极13。
其中，步骤S2的具体步骤为：先在缓冲层11上生长n型氮化镓层；将所述n型氮化镓层通过电化学腐蚀或热退火转化得到n型多孔氮化镓层12。其中，所述n型多孔氮化镓层12中包含掺杂剂，掺杂剂包括硅烷。更进一步地，所述n型多孔氮化镓层12的孔径优选为1nm～100nm。此外，通过在n型多孔氮化镓层12中并入Al组分，组成AlGaN三元化合物半导体。通过调节Al组分，可以调节AlGaN的禁带宽度，使其可以实现日盲波段(小于280nm)的探测。
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (10)
1.一种基于多孔氮化镓的紫外光电探测器，其特征在于，包括：
衬底；
缓冲层，位于所述衬底之上；
n型多孔氮化镓层，位于所述缓冲层之上；
一对电极，分别叠置于所述型多孔氮化镓层之上。
2.根据权利要求1所述的紫外光电探测器，其特征在于，所述n型多孔氮化镓层中包含掺杂剂，掺杂剂包括硅烷。
3.根据权利要求1所述的紫外光电探测器，其特征在于，所述n型多孔氮化镓层并入有Al组分。
4.根据权利要求1所述的紫外光电探测器，其特征在于，所述n型多孔氮化镓层的孔径为1nm～100nm。
5.根据权利要求1所述的紫外光电探测器，其特征在于，所述缓冲层材料包括石墨烯、氮化镓或氧化锌。
6.根据权利要求1所述的紫外光电探测器，其特征在于，所述电极为镍/金、钛/金、铂/金或钛/铝电极。
7.根据权利要求1所述的紫外光电探测器，其特征在于，所述电极形状包括插指状、圆柱状、三角状或长方体状。
8.根据权利要求1所述的紫外光电探测器，其特征在于，所述衬底的材料为蓝宝石、硅、碳化硅或者玻璃，衬底结构为平面或图形。
9.一种基于多孔氮化镓的紫外光电探测器的制备方法，其特征在于，包括：
S1、在衬底上生长缓冲层；
S2、在缓冲层上制备n型多孔氮化镓层；
S3、在n型多孔氮化镓层上生长一对电极。
10.根据权利要求9所述的制备方法，其特征在于，步骤S2中，所述n型多孔氮化镓层通过对氮化镓进行电化学腐蚀或热退火转化得到。
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