CN106653870B - A kind of Schottky diode with knot terminal extended structure - Google Patents
A kind of Schottky diode with knot terminal extended structure Download PDFInfo
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- CN106653870B CN106653870B CN201611259437.2A CN201611259437A CN106653870B CN 106653870 B CN106653870 B CN 106653870B CN 201611259437 A CN201611259437 A CN 201611259437A CN 106653870 B CN106653870 B CN 106653870B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 239000004020 conductor Substances 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000009413 insulation Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 9
- 230000007423 decrease Effects 0.000 abstract description 2
- 230000005684 electric field Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000002500 effect on skin Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention relates to semiconductor Schottky devices fields, in particular to a kind of Schottky diode with knot terminal extended structure, it include: the first conductivity type substrate, first conductive type semiconductor layer, second area conduction type JTE, insulating layer and anode metal layer, multiple valley gutters are formed in the area second conduction type JTE, the area second conduction type JTE surrounds the valley gutter, the first conductive material is filled in first valley gutter of anode metal layer, the second conductive material is filled in remaining valley gutter, second conductive material and the area the second conduction type JTE form Schottky contacts, the present invention further decreases susceptibility of the breakdown voltage to JTE concentration of device, improve the reversed breakdown characteristics of diode.
Description
Technical field
The present invention relates to semiconductor Schottky devices field, in particular to a kind of Schottky with knot terminal extended structure
Diode.
Technical background
Schottky diode (Schottky Barrier Diode) is a kind of low-power consumption, high current, Speed Semiconductor
Device.Its reverse phase recovery time is short (may diminish to several nanoseconds), and forward conduction voltage is low (0.4 volt), and rectified current is big (can be high
Up to several kiloamperes), therefore be widely used in Switching Power Supply, frequency converter, driver etc..
Due to the breakdown voltage of device depend greatly on knot curvature caused by edge strong electrical field, in order to obtain
The device of good blocking ability is obtained, knot fringe field is reduced, improves the practical breakdown electric field of device, various knot terminal technologies are used for
It mainly include the structures such as field plate (FP), field limiting ring (FLR), knot terminal extension (JTE) in the preparation of schottky diode device.
Wherein, knot terminal extended structure (JTE) has very extensive application, the concentration of the anti-breakdown voltage of device for the region JTE
It is very sensitive.102376779 B of Chinese patent CN discloses a kind of SiC Schottky diode, assists tying using floating becket
The terminal structure that terminal extends, can reduce susceptibility of the breakdown voltage to JTE concentration of device, improves the breakdown potential of device
Pressure, but its breakdown characteristics still needs to be further increased.
Summary of the invention
The object of the present invention is to provide a kind of Schottky diodes with knot terminal extended structure, further decrease device
Breakdown voltage to the susceptibility of JTE concentration, improve its reversed breakdown characteristics.
To achieve the above object, the present invention adopts the following technical scheme:
A kind of Schottky diode with knot terminal extended structure, comprising: the first conductivity type substrate is formed in first
The first conductive type semiconductor layer on conductive type semiconductor substrate is formed in the of the first conductive type semiconductor layer edge
Two areas conduction type JTE, the insulating layer being formed in the second area conduction type JTE and adjacent with insulating layer are formed in first
Anode metal layer on conductive type semiconductor layer and the second area conduction type JTE, in the area the second conduction type JTE
Multiple valley gutters are formed, the area the second conduction type JTE surrounds the valley gutter, close to first valley of anode metal layer
The first conductive material is filled in slot, fills the second conductive material, second conductive material and described second in remaining valley gutter
The area conduction type JTE forms Schottky contacts.
Optionally, first conductive material is not contacted with anode metal layer.
Optionally, first conductive material is contacted with anode metal layer.
Optionally, first conductive material is conductive polycrystalline silicon.
Optionally, at the area the second conduction type JTE, anode metal layer and first conductive type semiconductor
N insulation isolation structure is formed between layer, n is positive integer.
Optionally, the insulation isolation structure is more intensive closer to edge.
Optionally, first conductive material is identical as second conductive material.
Optionally, the first conductive type semiconductor layer material is SiC.
Optionally, the insulating layer material is silica.
Optionally, first conduction type is N-type, and the second conduction type is p-type.
Compared with the existing technology, the invention has the following advantages:
The present invention has the Schottky diode of knot terminal extended structure, and knot terminal extended structure surrounds multiple valley flute profiles
At under backward voltage, the second area conduction type JTE and the first conductive type semiconductor layer form PN junction depletion layer along valley gutter side
To distribution, effectively mitigate the case where trench bottom corners electric field is assembled, improves diode compressive property, and valley slot structure makes shape
At the angle that is formed with anode metal layer of PN depletion layer become larger, further increase diode compressive property.
The second conductive material of filling and the first conductive type semiconductor layer form schottky junctions in valley gutter of the present invention
It touches, under backward voltage, changes the field distribution in the second area conduction type JTE, the edge aggregate current of schottky junction mitigates sun
The electric field strength at the edge for the schottky junction that pole metal layer and the first conductive type semiconductor layer are formed, and then the Schottky improved
The compressive property of diode, and the first conductive material of the invention is respectively formed schottky junction in the bottom of valley gutter and two sides,
Increase metal-semiconductor contact area, further enhances the compressive property of diode compared with the existing technology.
Detailed description of the invention
Fig. 1 is first embodiment of the invention structural schematic diagram；
Fig. 2 is second embodiment of the invention structural schematic diagram；
Fig. 3 is third embodiment of the invention structural schematic diagram.
Specific embodiment
With reference to the accompanying drawing and the present invention is introduced in embodiment, and embodiment is only used for explaining the present invention,
There is not any restriction effect to the present invention.
First embodiment
Such as Fig. 1, a kind of Schottky diode with knot terminal extended structure, comprising: the first conductivity type substrate 10, shape
At the first conductive type semiconductor layer 20 on the first conductive type semiconductor substrate 10, it is formed in the first conduction type and partly leads
Second area conduction type JTE 30 at 20 edge of body floor, the insulating layer 40 being formed in the second area conduction type JTE 30 and with it is exhausted
The adjacent anode metal being formed on the first conductive type semiconductor layer 20 and the second area conduction type JTE 30 of edge layer 40
Layer 50, forms multiple valley gutters 60 in the area the second conduction type JTE 30, and the area the second conduction type JTE 30 surrounds institute
Valley gutter 60 is stated, the first conductive material 70, remaining valley gutter 60 are filled in first valley gutter 60 of anode metal layer 50
The second conductive material 80 of interior filling, second conductive material 80 form schottky junctions with the area the second conduction type JTE 30
Touching.
The first conduction type of the present embodiment can be N-type, or p-type, it is more using N-type under normal circumstances, below
Using the first conduction type as N-type, the second conduction type is introduced for p-type.
First conductivity type substrate 10 and 20 material of the first conductive type semiconductor layer can for SiC or other
Semiconductor material, such as Si, wherein 10 doping concentration of the first conductivity type substrate is heavier, the first conductive type semiconductor layer
20 doping concentrations are lighter, and the first conductive type semiconductor layer 20 can be epitaxially-formed in the first conductivity type substrate 10.Second
The area conduction type JTE 30 can be by forming in 20 ion implantation doping of the first conductive type semiconductor layer.It is formed in the second conduction
Insulating layer 40 in the area type JTE 30 can be silicon dioxide insulating layer etc., can be formed by way of chemical vapor deposition.It is described
Anode metal layer 50 and the first conductive type semiconductor layer 20 form Schottky contacts.
First conductive material 70 can not be contacted or be contacted with anode metal layer 50, and the present embodiment first is conductive
Material 70 is not contacted with anode metal layer 50, at this point, the first conductive material 70 is identical as the second conductive material 80, it can be same
Technical process realization, simplification of flowsheet.
The present embodiment has the Schottky diode of knot terminal extended structure, and knot terminal extended structure surrounds multiple valley gutters
It is formed, under backward voltage, the second area 30 conduction type JTE and the first conductive type semiconductor layer 20 form PN junction depletion layer along tiltedly
60 directional spreding of groove effectively mitigates the case where trench bottom corners electric field is assembled, and improves diode compressive property, and valley gutter 60
The angle that structure forms the PN depletion layer to be formed with anode metal layer 50 becomes larger, and further increases diode compressive property.
The present embodiment invents the second conductive material 80 of filling and the first conductive type semiconductor layer 20 in the valley gutter 60
Schottky contacts are formed, under backward voltage, change the field distribution in the second area conduction type JTE 30, the edge of schottky junction
Aggregate current mitigates the electric-field strength at the edge of the schottky junction of anode metal layer 50 and the formation of the first conductive type semiconductor layer 20
Degree, and then the compressive property of the Schottky diode improved, and the first conductive material of the present embodiment 70 is in the bottom of valley gutter
And two sides are respectively formed schottky junction, increase metal-semiconductor contact area, further enhance diode compared with the existing technology
Compressive property.
Second embodiment
Such as Fig. 2, the present embodiment and first embodiment technical solution are essentially identical, the difference is that, described first leads
Electric material 70 is contacted with anode metal layer 50, at this point, the first conductive material 70 and the second conductive material in the valley gutter 60
80 can be the same or different, and preferably described first conductive material 70 is conductive polycrystalline silicon, and conductive polycrystalline silicon has good
Filling capacity keeps device performance more stable, and it is conductive that first conductive material 70 contacts increase by second with anode metal layer 50
Electric field density in the area type JTE 30, improvement result of the second area conduction type JTE 30 of enhancing to reverse withstand voltage ability.
3rd embodiment
Such as Fig. 3, the present embodiment and first embodiment technical solution are essentially identical, the difference is that, close to described the
At two areas conduction type JTE 30, between anode metal layer 50 and first conductive type semiconductor layer 20 formed n insulate every
From structure 90, for the present embodiment by taking n=3 as an example, n insulation isolation structure 90 will be by 50 first conduction type of inflow anode metal layer
The current isolation of semiconductor layer 20 disperses skin effect at several parts, reduces anode metal layer 50 close to second conductive-type
The edge in the area type JTE 30 because concentration skin effect caused by electric field assemble, reduce reverse leakage current, preferably it is described insulation every
It is more intensive closer to edge from structure 90.
Claims (8)
1. a kind of Schottky diode with knot terminal extended structure, comprising: the first conductivity type substrate is formed in first and leads
The first conductive type semiconductor layer on electric type semiconductor substrate is formed in the second of the first conductive type semiconductor layer edge
The area conduction type JTE, the insulating layer being formed in the second area conduction type JTE and adjacent with insulating layer be formed in first and lead
Anode metal layer on electric type semiconductor layer and the second area conduction type JTE, it is characterised in that: second conductive-type
Multiple valley gutters are formed in the area type JTE, the area the second conduction type JTE surrounds the valley gutter, close to anode metal layer
The first conductive material is filled in first valley gutter, fills the second conductive material, second conductive material in remaining valley gutter
Schottky contacts are formed with the area the second conduction type JTE；At the area the second conduction type JTE, anode metal layer
N insulation isolation structure is formed between first conductive type semiconductor layer, n is positive integer；The insulation isolation structure
It is more intensive closer to edge.
2. the Schottky diode according to claim 1 with knot terminal extended structure, it is characterised in that: described first
Conductive material is not contacted with anode metal layer.
3. the Schottky diode according to claim 1 with knot terminal extended structure, it is characterised in that: described first
Conductive material is contacted with anode metal layer.
4. the Schottky diode according to claim 3 with knot terminal extended structure, it is characterised in that: described first
Conductive material is conductive polycrystalline silicon.
5. the Schottky diode according to claim 1 with knot terminal extended structure, it is characterised in that: described first
Conductive material is identical as second conductive material.
6. the Schottky diode according to claim 1 with knot terminal extended structure, it is characterised in that: described first
Conductive type semiconductor layer material is SiC.
7. the Schottky diode according to claim 1 with knot terminal extended structure, it is characterised in that: the insulation
Layer material is silica.
8. the Schottky diode according to claim 1 with knot terminal extended structure, it is characterised in that: described first
Conduction type is N-type, and the second conduction type is p-type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611259437.2A CN106653870B (en) | 2016-12-30 | 2016-12-30 | A kind of Schottky diode with knot terminal extended structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611259437.2A CN106653870B (en) | 2016-12-30 | 2016-12-30 | A kind of Schottky diode with knot terminal extended structure |
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| Publication Number | Publication Date |
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| CN106653870A CN106653870A (en) | 2017-05-10 |
| CN106653870B true CN106653870B (en) | 2019-08-13 |
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| CN201611259437.2A Expired - Fee Related CN106653870B (en) | 2016-12-30 | 2016-12-30 | A kind of Schottky diode with knot terminal extended structure |
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| CN115911098A (en) * | 2023-01-29 | 2023-04-04 | 深圳市威兆半导体股份有限公司 | Silicon carbide power device terminal and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376779A (en) * | 2011-11-25 | 2012-03-14 | 中国科学院微电子研究所 | Sic schottky diode and manufacturing method thereof |
| CN105977310A (en) * | 2016-07-27 | 2016-09-28 | 电子科技大学 | Silicon carbide power device terminal structure and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015040675A1 (en) * | 2013-09-17 | 2015-03-26 | 株式会社日立製作所 | Semiconductor device, power conversion device, rail vehicle, and semiconductor device manufacturing method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376779A (en) * | 2011-11-25 | 2012-03-14 | 中国科学院微电子研究所 | Sic schottky diode and manufacturing method thereof |
| CN105977310A (en) * | 2016-07-27 | 2016-09-28 | 电子科技大学 | Silicon carbide power device terminal structure and manufacturing method thereof |
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