CN106653866A - GaAs基固态等离子体PiN二极管及其制备方法 - Google Patents
GaAs基固态等离子体PiN二极管及其制备方法 Download PDFInfo
- Publication number
- CN106653866A CN106653866A CN201611188522.4A CN201611188522A CN106653866A CN 106653866 A CN106653866 A CN 106653866A CN 201611188522 A CN201611188522 A CN 201611188522A CN 106653866 A CN106653866 A CN 106653866A
- Authority
- CN
- China
- Prior art keywords
- type
- layer
- type groove
- gaas
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 69
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000000034 method Methods 0.000 claims abstract description 66
- 238000002955 isolation Methods 0.000 claims abstract description 46
- 238000005516 engineering process Methods 0.000 claims abstract description 11
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 103
- 239000007787 solid Substances 0.000 claims description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 50
- 239000011241 protective layer Substances 0.000 claims description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- 229920005591 polysilicon Polymers 0.000 claims description 27
- 239000000377 silicon dioxide Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 25
- 238000001259 photo etching Methods 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 19
- 229910052681 coesite Inorganic materials 0.000 claims description 15
- 229910052906 cristobalite Inorganic materials 0.000 claims description 15
- 229910052682 stishovite Inorganic materials 0.000 claims description 15
- 229910052905 tridymite Inorganic materials 0.000 claims description 15
- 238000001039 wet etching Methods 0.000 claims description 11
- 239000003292 glue Substances 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 238000001459 lithography Methods 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 11
- 238000002347 injection Methods 0.000 abstract description 10
- 239000007924 injection Substances 0.000 abstract description 10
- 238000000151 deposition Methods 0.000 abstract description 5
- 238000011049 filling Methods 0.000 abstract description 2
- 210000002381 plasma Anatomy 0.000 description 56
- 229910052581 Si3N4 Inorganic materials 0.000 description 31
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 31
- 150000002500 ions Chemical class 0.000 description 21
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 238000009826 distribution Methods 0.000 description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000002421 cell wall Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611188522.4A CN106653866A (zh) | 2016-12-20 | 2016-12-20 | GaAs基固态等离子体PiN二极管及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611188522.4A CN106653866A (zh) | 2016-12-20 | 2016-12-20 | GaAs基固态等离子体PiN二极管及其制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN106653866A true CN106653866A (zh) | 2017-05-10 |
Family
ID=58834348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201611188522.4A Pending CN106653866A (zh) | 2016-12-20 | 2016-12-20 | GaAs基固态等离子体PiN二极管及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106653866A (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61121370A (ja) * | 1984-11-16 | 1986-06-09 | Matsushita Electric Ind Co Ltd | 半導体装置 |
CN101714591A (zh) * | 2009-11-10 | 2010-05-26 | 大连理工大学 | 一种硅光电二极管的制作方法 |
CN102842595A (zh) * | 2011-06-20 | 2012-12-26 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
US20160005884A1 (en) * | 2012-12-26 | 2016-01-07 | Rohm Co., Ltd. | Semiconductor device |
-
2016
- 2016-12-20 CN CN201611188522.4A patent/CN106653866A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61121370A (ja) * | 1984-11-16 | 1986-06-09 | Matsushita Electric Ind Co Ltd | 半導体装置 |
CN101714591A (zh) * | 2009-11-10 | 2010-05-26 | 大连理工大学 | 一种硅光电二极管的制作方法 |
CN102842595A (zh) * | 2011-06-20 | 2012-12-26 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
US20160005884A1 (en) * | 2012-12-26 | 2016-01-07 | Rohm Co., Ltd. | Semiconductor device |
Non-Patent Citations (1)
Title |
---|
R.TAYRANI ET AL: "MICROWAVE PIN DIODES FOR GaAs IC", 《ELECTRONICS LETTERS》 * |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106847903A (zh) | 用于可重构环形天线的SiGe基异质SPiN二极管的制备方法 | |
CN106847904A (zh) | 用于套筒天线的GaAs/Ge/GaAs异质结构SPiN二极管串的制备方法 | |
CN106816684A (zh) | 用于可重构多层全息天线的Ge基等离子pin二极管制备方法 | |
CN106784019A (zh) | 一种Ge基固态等离子体PiN二极管及其制备方法 | |
CN106783600B (zh) | 一种固态等离子体PiN二极管及其制备方法 | |
CN106602215A (zh) | 用于可重构全息天线的SiGe基等离子pin二极管的制备方法 | |
CN106653866A (zh) | GaAs基固态等离子体PiN二极管及其制备方法 | |
US10177141B2 (en) | Preparation method for heterogeneous SiGe based plasma P-I-N diode string for sleeve antenna | |
CN106847901A (zh) | 多层全息天线中AlAs‑Ge‑AlAs结构基等离子pin二极管的制造方法 | |
CN106449734A (zh) | GaAs‑Ge‑GaAs异质结构的SPiN二极管及其制备方法 | |
CN106783604A (zh) | AlAs‑Ge‑AlAs结构的基固态等离子体PiN二极管及其制备方法 | |
CN106847899A (zh) | 用于可重构偶极子天线的GaAs/Ge/GaAsSPiN二极管串的制备方法 | |
CN106783601A (zh) | 一种Si‑Ge‑Si异质Ge基固态等离子体PiN二极管的制备方法及其器件 | |
CN106783597A (zh) | 用于套筒天线的AlAs/Ge/AlAs固态等离子体PiN二极管串的制备方法 | |
CN106847692A (zh) | 用于多层全息天线的GaAs基横向等离子pin二极管的制备方法 | |
CN106816682A (zh) | 可重构全息天线中的固态等离子pin二极管的制备方法 | |
CN106783596A (zh) | 用于套筒天线的异质SiGe基等离子pin二极管串的制备方法 | |
CN106711236A (zh) | 一种SiGe基固态等离子体PiN二极管及其制备方法 | |
CN106783593A (zh) | 应用于环形天线的Ge基异质固态等离子二极管的制备方法 | |
CN106784020A (zh) | 异质SiGe基固态等离子体PiN二极管的制备方法及其器件 | |
CN106783595A (zh) | 一种用于环形天线的GaAs/Ge/GaAs异质SPiN二极管的制备方法 | |
CN106847693A (zh) | 应用于可重构环形天线的GaAs固态等离子pin二极管制备方法 | |
CN106783559B (zh) | 基于SPiN二极管的频率可重构套筒偶极子天线制备方法 | |
CN106653867A (zh) | 基于台状有源区的固态等离子体PiN二极管及其制备方法 | |
CN106601616A (zh) | 可重构多层全息天线中的异质Ge基pin二极管串制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Hu Huiyong Inventor after: Li Lu Inventor after: Liu Yang Inventor after: Zhang Heming Inventor after: Song Jianjun Inventor after: Shu Bin Inventor after: Xuan Rongxi Inventor after: Su Han Inventor after: Wang Yu Inventor before: Hu Huiyong Inventor before: Kang Haiyan Inventor before: Liu Yang Inventor before: Zhang Heming Inventor before: Song Jianjun Inventor before: Shu Bin Inventor before: Xuan Rongxi Inventor before: Su Han Inventor before: Wang Yu |
|
CB03 | Change of inventor or designer information | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170510 |
|
RJ01 | Rejection of invention patent application after publication |