CN106653775A - Array substrate, manufacturing process thereof, display panel and display device - Google Patents
Array substrate, manufacturing process thereof, display panel and display device Download PDFInfo
- Publication number
- CN106653775A CN106653775A CN201710005659.XA CN201710005659A CN106653775A CN 106653775 A CN106653775 A CN 106653775A CN 201710005659 A CN201710005659 A CN 201710005659A CN 106653775 A CN106653775 A CN 106653775A
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- Prior art keywords
- film layer
- scraggly
- blue light
- array base
- base palte
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- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 30
- 239000010408 film Substances 0.000 description 82
- 238000000034 method Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 239000004744 fabric Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229940097275 indigo Drugs 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 208000017442 Retinal disease Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 210000001525 retina Anatomy 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L2021/775—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses an array substrate, a manufacturing process thereof, a display panel and a display device, in order to prevent the generation of Rubbering Mura or reducing the degree of the Rubbering Mura. The array substrate provided by the invention comprises a glass substrate and a layer structure arranged on the glass substrate, a scraggly film layer is arranged in the layer structure, and the array substrate further comprises a film layer used for adjusting the smoothness of the scraggly film layer.
Description
Technical field
The application is related to display technology field, more particularly to a kind of array base palte and its manufacture craft, display floater, display
Device.
Background technology
In crystal liquid substrate manufacture process, in order that liquid crystal molecule shape has a certain degree, it usually needs on substrate
Alignment films carry out friction orientation.If occurring that friction is uneven in this course, panel quality can be caused bad.Friction is not
Uniformly the mechanism of production of (Rubbing Mura) phenomenon is, due to the uneven surface of (Rubbing) of being rubbed, to cause in Rubbing
During, the fine hair skewness on Rubbing cloth is caused, and produce Rubbing Mura.
Senior super dimension field switch technology (Advanced Super Dimension Switch, ADS) product is being carried out
During Rubbing, referring to Fig. 1, roller 101Rubbing directions are parallel with grid line (Gate lines), during Rubbing due to
Gate lines region 103 is more higher than the surface of glass substrate 104, causes the fine hair skewness of Rubbing cloth 102, i.e. region in figure
The fine hair skewness of the Rubbing cloth in 1021, so as in Rubbing, easily produce on Gate lines region 103
Rubbing Mura 106。
The content of the invention
The embodiment of the present application provides a kind of array base palte and its manufacture craft, display floater, display device, to prevent
Produce Rubbing Mura or reduce the degree of Rubbing Mura.
A kind of array base palte that the embodiment of the present application is provided, including glass substrate and be arranged on the glass substrate
Rotating fields, have scraggly film layer in the Rotating fields, the array base palte also includes:It is described rough and uneven in surface for adjusting
Film layer flatness film layer.
The film layer of flatness of the embodiment of the present application by being provided for adjusting scraggly film layer in array base palte,
So that array base palte is more smooth, prevents Rubbing Mura or reduce the degree of Rubbing Mura.
Alternatively, the scraggly film layer is controlling grid scan line.
The embodiment of the present application, by being provided for adjusting the scraggly film that controlling grid scan line is located to controlling grid scan line
The film layer of the flatness of layer, so as to reduce or avoid the segment difference of thin film transistor (TFT) (Thin Film Transistor, TFT), because
This can reduce the degree of Rubbing Mura or prevent Rubbing Mura.
Alternatively, the film layer for adjusting the flatness of the scraggly film layer, is transparent film layer.
Due to adopting transparent film layer, so as to not affect the transmitance of light.
Alternatively, arrange fluted in the transparent film layer, the controlling grid scan line layer is arranged in the groove.
If controlling grid scan line layer is provided entirely in groove, smooth Rotating fields can be obtained, so as to prevent
Rubbing Mura;If controlling grid scan line layer segment is arranged in groove, more smooth Rotating fields can be obtained, so as to drop
The degree of low Rubbing Mura.
Alternatively, the controlling grid scan line layer is provided entirely in the groove, and the groove is filled and led up.
Alternatively, the transparent film layer is anti-blue light film layer.
TFT segment differences are adjusted by using anti-blue light film layer, so as to both Rubbing Mura can be reduced again with anti-blue light
Degree or prevent Rubbing Mura.
A kind of display floater that the embodiment of the present application is provided, including the array base palte described in the embodiment of the present application.
A kind of display device that the embodiment of the present application is provided, including the display floater described in the embodiment of the present application.
A kind of manufacture craft of the array base palte described in the embodiment of the present application that the embodiment of the present application is provided, including glass is set
Glass substrate, and Rotating fields are set on the glass substrate, there is scraggly film layer, described in the Rotating fields
During the Rotating fields are arranged on glass substrate, including being provided for adjusting the flatness of the scraggly film layer
Film layer.
Alternatively, the film layer for adjusting the flatness of the scraggly film layer, is anti-blue light film layer;It is described
Scraggly film layer is controlling grid scan line;
The Rotating fields are set on the glass substrate, are specifically included:
Anti-blue light film layer is set on the glass substrate;
Groove is set in the anti-blue light film layer;
Controlling grid scan line is set in the groove.
Description of the drawings
Technical scheme in order to be illustrated more clearly that the embodiment of the present application, below will be to making needed for embodiment description
Accompanying drawing is briefly introduced, it should be apparent that, drawings in the following description are only some embodiments of the present application, for this
For the those of ordinary skill in field, on the premise of not paying creative work, can be obtaining other according to these accompanying drawings
Accompanying drawing.
Fig. 1 is the generation process schematic of Rubbing Mura phenomenons of the prior art;
The each structural representation made during array base palte that Fig. 2~Figure 14 is provided for the embodiment of the present application;
Figure 15 is the structural representation of array base palte of the prior art.
Specific embodiment
The embodiment of the present application provides a kind of array base palte and its manufacture craft, display floater, display device, to prevent
Produce Rubbing Mura or reduce the degree of Rubbing Mura.
The technical scheme that the embodiment of the present application is provided is illustrated below in conjunction with the accompanying drawings.
A kind of array base palte that the embodiment of the present application is provided, including glass substrate and be arranged on the glass substrate
Rotating fields, have scraggly film layer in the Rotating fields, the array base palte also includes:It is described rough and uneven in surface for adjusting
Film layer flatness film layer.
The film layer of flatness of the embodiment of the present application by being provided for adjusting scraggly film layer in array base palte,
So that array base palte is more smooth, prevents Rubbing Mura or reduce the degree of Rubbing Mura.
Alternatively, the scraggly film layer is controlling grid scan line.
The embodiment of the present application, by being provided for adjusting the scraggly film that controlling grid scan line is located to controlling grid scan line
The film layer of the flatness of layer, so as to reduce or avoid the segment difference of thin film transistor (TFT) (Thin Film Transistor, TFT), because
This can reduce the degree of Rubbing Mura or prevent Rubbing Mura.
Of course, except controlling grid scan line is this there is scraggly film layer in addition to, in the same manner, the embodiment of the present application can be with
There is scraggly film layer to other to be adjusted.
Alternatively, the film layer for adjusting the flatness of the scraggly film layer, is transparent film layer.
Due to adopting transparent film layer, so as to not affect the transmitance of light.
Alternatively, arrange fluted in the transparent film layer, the controlling grid scan line layer is arranged in the groove.
Alternatively, the controlling grid scan line layer is provided entirely in the groove, and the groove is filled and led up.
If controlling grid scan line layer is provided entirely in groove, smooth Rotating fields can be obtained, so as to prevent
Rubbing Mura;If controlling grid scan line layer segment is arranged in groove, more smooth Rotating fields can be obtained, so as to drop
The degree of low Rubbing Mura.
Alternatively, the transparent film layer is clear glass.
Alternatively, the material of the transparent film layer is silicon nitride or silica.
All there is the shortwave of substantial amounts of irregular frequency in the screen such as various mobile phones, computer, television set used on the market
Blue light.Blue light can cause kopiopia, long-time blue light illumination retina to cause retina eye diseases.Send to improve display screen
Blue light for the injury of personnel, develop a kind of anti-blue light technology.For current TFT LCD (Liquid
Crystal Display, LCD) the anti-blue light technology of product is before TFT LCD productions are carried out, anti-indigo plant to be increased on the tft substrate
Light film layer, by the alternate plural layers of high low-refraction the principle of angle of reflection is equal to by the incidence angle of specific band light, real
Now reduce the transmission of blue light.
Specifically, referring to Fig. 2, before TFT techniques make, anti-blue light film 202 is coated on glass substrate 201, then
On the basis of anti-blue light film, the making of TFT LCD techniques is carried out.If increased together after anti-blue light film layer completes
Mask techniques, by blue light film layer some grooves are dug out, and Gate layers are placed in the groove of anti-blue light layer, can reduce Gate high
Degree, reduces segment difference in TFT, and then prevents or reduce the degree of Rubbing Mura.
Therefore, alternatively, the transparent film layer is anti-blue light film layer.
In the embodiment of the present application, TFT segment differences can be reduced with reference to existing Rotating fields, such as by anti-blue light technical products
On anti-blue light film layer on increase Mask exposure technologys, Gate layers are placed in anti-blue light film layer, reduce TFT surfaces segment difference,
So as to reducing the degree of Rubbing technique Rubbing Mura or preventing Rubbing Mura.I.e. the embodiment of the present application is carried
For technical scheme, by using anti-blue light film layer adjust TFT segment differences, so as to both Rubbing can be reduced again with anti-blue light
The degree of Mura prevents Rubbing Mura.
A kind of display floater that the embodiment of the present application is provided, including the array base palte described in the embodiment of the present application.
A kind of display device that the embodiment of the present application is provided, including the display floater described in the embodiment of the present application.For example, should
Display device is the products with display function such as mobile phone, TV, computer, PAD.
A kind of manufacture craft of the array base palte described in the embodiment of the present application that the embodiment of the present application is provided, including glass is set
Glass substrate, and Rotating fields are set on the glass substrate, there is scraggly film layer, described in the Rotating fields
During the Rotating fields are arranged on glass substrate, including being provided for adjusting the flatness of the scraggly film layer
Film layer.
Alternatively, the film layer for adjusting the flatness of the scraggly film layer, is anti-blue light film layer;It is described
Scraggly film layer is controlling grid scan line;
The Rotating fields are set on the glass substrate, are specifically included:
Anti-blue light film layer is set on the glass substrate;
Groove is set in the anti-blue light film layer;
Controlling grid scan line is set in the groove.
The manufacturing process of the array base palte provided in the embodiment of the present application is provided.
Referring to Fig. 3, after anti-blue light film layer 202 is set on glass substrate 201, apply in the anti-blue light film layer 202
Photoetching (Photo Resist, PR) glue 203 is covered, then increases anti-blue light mask (Mask) 204 in the top of photoresist 203, and led to
Overexposure technique so that light 205 (light that exposure technology is adopted, such as ultraviolet light) passes through anti-blue light Mask 204, in photoresist
The groove pattern of needs is formed on 203, as shown in Figure 4.
On the basis of structure shown in Fig. 4, by developer solution so that anti-blue light film layer and developer solution that unglazed photoresist is blocked
Reaction is rotten, the groove pattern 206 of needs is formed in anti-blue light film layer 202, as shown in Figure 5.
On the basis of structure shown in Fig. 5, referring to Fig. 6, by etching technics, by the rotten portion in anti-blue light film layer 202
Divide and remove, and then groove 207 is obtained in anti-blue light film layer.
On the basis of structure shown in Fig. 6, referring to Fig. 7, remaining photoresist 203 in anti-blue light film layer 202 is peeled off,
Form the anti-blue light film layer 202 with groove 207 (or referred to as raceway groove).
On the basis of structure shown in Fig. 7, referring to Fig. 8, target 208 is set on structure shown in Fig. 7, is splashed by target
Technique is penetrated, Gate layers are coated in anti-blue light film layer 202, referring to Fig. 9, wherein, a part 2081 for target 208 is coated in anti-indigo plant
In the groove 207 of light film layer 202, another part 2082 of target 208 is coated in the surface of anti-blue light film layer 202.
On the basis of structure shown in Fig. 9, referring to Figure 10, photoresist 210, Ran Hou is coated on structure shown in Fig. 9
The top of photoresist 210 increases Gate layers Mask 211, by exposure technology so that light 205 passes through Gate layers Mask 211, in light
The figure of needs is formed in photoresist 210, as shown in figure 11.
On the basis of structure shown in Figure 11, referring to Figure 12, by developer solution so that the Gate that unglazed photoresist 210 is blocked
Layer 2082 is rotten with developer solution reaction, forms the figure for needing.
On the basis of structure shown in Figure 12, by etching technics, by the photoresist 210 in anti-blue light film layer 202 and
The Gate layers 2082 of rotten part remove, and then obtain the Gate layers 2081 in the groove of anti-blue light film layer, as shown in figure 13.
That is, most at last controlling grid scan line has been accomplished in the groove of anti-blue light film layer.
Subsequently, other Rotating fields can be made on architecture basics shown in Figure 13, for example, with reference to Figure 14, continues to lay grid
Pole insulating barrier 211, as seen from Figure 14, can obtain smooth Rotating fields.
And in prior art, referring to Figure 15, due to controlling grid scan line 207 be set directly at the surface of anti-blue light film layer 202 it
On, therefore, the subsequent films such as gate insulator 209 are subsequently re-layed, can all form rough surface.
In sum, the embodiment of the present application is by before existing TFT designs, increasing on the glass substrate the anti-indigo plant of layer of transparent
Light film layer, in transparent anti-blue light film layer one Mask technique is increased, and some grooves will be dug out in transparent anti-blue light film layer, by Gate
Layer is placed in transparent anti-blue light film layer, so as to reduce TFT integral surface segment differences, makes Rubbing cloth in Rubbing technical process
On fine hair distribution it is homogeneous, so as to prevent or reduce the degree of Rubbing Mura.
Obviously, those skilled in the art can carry out the essence of various changes and modification without deviating from the application to the application
God and scope.So, if these modifications of the application and modification belong to the scope of the application claim and its equivalent technologies
Within, then the application is also intended to comprising these changes and modification.
Claims (10)
1. a kind of array base palte, including glass substrate and the Rotating fields being arranged on the glass substrate, in the Rotating fields
With scraggly film layer, it is characterised in that the array base palte also includes:For adjusting the scraggly film layer
The film layer of flatness.
2. array base palte according to claim 1, it is characterised in that the scraggly film layer is controlling grid scan line.
3. array base palte according to claim 2, it is characterised in that described for adjusting the scraggly film layer
The film layer of flatness, is transparent film layer.
4. array base palte according to claim 3, it is characterised in that arrange fluted in the transparent film layer, the grid
Pole scan line layer is arranged in the groove.
5. array base palte according to claim 4, it is characterised in that the controlling grid scan line layer is provided entirely in described recessed
In groove, and the groove is filled and led up.
6. array base palte according to claim 4, it is characterised in that the transparent film layer is anti-blue light film layer.
7. a kind of display floater, it is characterised in that including the array base palte described in the arbitrary claim of claim 1~6.
8. a kind of display device, it is characterised in that including the display floater described in claim 7.
9. the manufacture craft of the array base palte described in a kind of arbitrary claim of claim 1~6, including setting glass substrate, and
Rotating fields are set on the glass substrate, there is scraggly film layer, it is characterised in that described in the Rotating fields
During the Rotating fields are arranged on glass substrate, including being provided for adjusting the flatness of the scraggly film layer
Film layer.
10. manufacture craft according to claim 9, it is characterised in that described for adjusting the scraggly film layer
Flatness film layer, be anti-blue light film layer;The scraggly film layer is controlling grid scan line;
The Rotating fields are set on the glass substrate, are specifically included:
Anti-blue light film layer is set on the glass substrate;
Groove is set in the anti-blue light film layer;
Controlling grid scan line is set in the groove.
Priority Applications (1)
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CN201710005659.XA CN106653775A (en) | 2017-01-04 | 2017-01-04 | Array substrate, manufacturing process thereof, display panel and display device |
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CN201710005659.XA CN106653775A (en) | 2017-01-04 | 2017-01-04 | Array substrate, manufacturing process thereof, display panel and display device |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111223879A (en) * | 2020-02-28 | 2020-06-02 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103855085A (en) * | 2012-11-29 | 2014-06-11 | 索尼公司 | Thin film device, method of manufacturing the same, and method of manufacturing display |
CN104459834A (en) * | 2014-12-23 | 2015-03-25 | 四川东方绝缘材料股份有限公司 | Multilayer optical thin film and manufacturing method thereof |
KR101533098B1 (en) * | 2008-06-04 | 2015-07-02 | 삼성디스플레이 주식회사 | Thin film transistor and method of manufacturing thereof |
CN105093377A (en) * | 2015-09-17 | 2015-11-25 | 京东方科技集团股份有限公司 | Blue ray attenuation device and preparation method, base plate, displayer and intelligent wearable product |
-
2017
- 2017-01-04 CN CN201710005659.XA patent/CN106653775A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101533098B1 (en) * | 2008-06-04 | 2015-07-02 | 삼성디스플레이 주식회사 | Thin film transistor and method of manufacturing thereof |
CN103855085A (en) * | 2012-11-29 | 2014-06-11 | 索尼公司 | Thin film device, method of manufacturing the same, and method of manufacturing display |
CN104459834A (en) * | 2014-12-23 | 2015-03-25 | 四川东方绝缘材料股份有限公司 | Multilayer optical thin film and manufacturing method thereof |
CN105093377A (en) * | 2015-09-17 | 2015-11-25 | 京东方科技集团股份有限公司 | Blue ray attenuation device and preparation method, base plate, displayer and intelligent wearable product |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111223879A (en) * | 2020-02-28 | 2020-06-02 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
CN111223879B (en) * | 2020-02-28 | 2022-10-18 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
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Application publication date: 20170510 |