CN106653647A - 一种带有陶瓷衬套的可控温盘面结构 - Google Patents

一种带有陶瓷衬套的可控温盘面结构 Download PDF

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CN106653647A
CN106653647A CN201510725508.2A CN201510725508A CN106653647A CN 106653647 A CN106653647 A CN 106653647A CN 201510725508 A CN201510725508 A CN 201510725508A CN 106653647 A CN106653647 A CN 106653647A
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hole
chamber lining
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吴凤丽
苏欣
张建
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Piotech Inc
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Abstract

一种带有陶瓷衬套的可控温盘面结构，主要解决现有的控温盘面打火几率大导致支撑件加工数量、难度、费用增加的问题，本发明提供一种带有陶瓷衬套的可控温盘面结构，该结构包括铝盘与陶瓷衬套，所述铝盘上设有三个通孔A和九个通孔B，铝盘的内部还设有传热通道，所述传热通道上设有进口和出口；所述陶瓷衬套上设有凸台和边沿，陶瓷衬套的内部设有与所述三个通孔A位置对应的三个顶升销套管，每个顶升销套管中有通孔C，陶瓷衬套内部还设有与所述九个通孔位置相对应的九个支撑柱，陶瓷衬套的底部设有孔A与孔B。本发明的可控温盘面结构可消除打火现象并且温度可控。

Description

一种带有陶瓷衬套的可控温盘面结构
技术领域
本发明涉及一种带有陶瓷衬套的可控温盘面结构，属于半导体薄膜沉积应用及制造技术领域。
背景技术
现有的半导体镀膜设备，薄膜沉积工艺通常需要在真空且一定温度环境下进行，如等离子化学气相沉积设备中，薄膜衬底往往被一种可控温基底承载，且所述的基底通常作为下电极与某种上电极零件对应产生薄膜沉积工艺所需要的电场环境，当工艺反应进行时，上电极加载射频电压，铝材料的基底作为下电极接地，薄膜衬底在基底上接收工艺气体反应附着形成薄膜，为避免射频电压产生的打火，行业内通常将铝材料的薄膜基底边缘安装陶瓷定位环来定位薄膜衬底的中心位置，并在铝材料的基底表面设置高度相等的若干薄膜衬底支撑件，所述的支撑件的物理化学性质必须满足半导体行业标准，如薄膜衬底与所述支撑件接触时，不能有颗粒产生等条件，因此行业中一般采用陶瓷材料或蓝宝石材料嵌入铝材料基底中的方式实现对薄膜衬底的支撑，但是，在薄膜沉积工艺中，氟化处理往往会破坏设置在铝材料基底表面的嵌入结构，导致若干陶瓷材料或蓝宝石材料嵌入铝材料基底中时，高度不一致，影响薄膜衬底的水平。所以在此类半导体设备调试时，需要加工不同规格的陶瓷材料或蓝宝石支撑件，安装在铝材料基底表面后还需测量高度，选取不同规格的支撑件满足高度一致的要求，而且当薄膜衬底置于铝材料基底表面时，基底除边缘有陶瓷定位环，其余铝表面均暴露在反应腔体中，增大产生打火的几率，使停机调试时间加长，支撑件加工数量、难度、费用增加，打火烧灼零件及损坏薄膜，由于嵌入支撑件的方式还会带来支撑件脱出铝材料基底的风险，设备可靠性降低。
发明内容
本发明以解决上述问题为目的，提供了一种带有陶瓷衬套的可控温盘面结构，该结构使带有传热结构的铝材料基承载薄膜衬底时完全被陶瓷包覆，并将薄膜衬底支撑结构、薄膜衬底中心定位结构与陶瓷衬套结合，实现对薄膜衬底水平承载、温度控制、中心定位，防止打火的功能。
为实现上述目的，本发明采用下述技术方案：
一种带有陶瓷衬套的可控温盘面结构，该结构包括铝盘与陶瓷衬套，所述铝盘上设有三个通孔A和九个通孔B，铝盘的内部还设有传热通道，所述传热通道上设有进口和出口；所述陶瓷衬套上设有凸台和边沿，陶瓷衬套的内部设有与所述三个通孔A位置对应的三个顶升销套管，每个顶升销套管中有通孔C，陶瓷衬套内部还设有与所述九个通孔位置相对应的九个支撑柱，陶瓷衬套的底部设有孔A与孔B，所述孔A与出口相通，所述孔B与入口相通；所述传热通道采用摩擦焊或钎焊的方式固定于铝盘内部，所述铝盘和陶瓷衬套扣合固定，使陶瓷衬套底部的三个顶升销套管插入铝盘边缘处的三个通孔A内，使陶瓷衬套设置的九个支撑柱插入铝盘中的九个通孔B中。
所述九个支撑柱插入九个通孔B中使九个支撑柱的顶端高于铝盘1的盘面。
所述九个支撑柱的高度均相同。
所述传热通道中通入液态传热介质或埋设加热丝来实现温度控制。
本发明的有益效果及特点在于：
本发明采用一种带有陶瓷衬套的可控温盘面结构，使带有传热结构的铝材料基承载薄膜衬底时完全被陶瓷包覆，消除打火并且温度可控。将薄膜衬底支撑结构、薄膜衬底中心定位结构与陶瓷衬套结合，无需加工多种规格且容易脱出的支撑件，实现对薄膜衬底水平承载，中心定位。
附图说明
图1为本发明的铝盘的结构示意图；
图2为本发明的铝盘的内部结构示意图；
图3为本发明的陶瓷衬套结构示意图。
图4为本发明的结构示意图。
具体实施方式
下面结合实施例进一步对本发明进行详细说明，但发明保护内容不局限于所述实施例：
参照图1-4，一种带有陶瓷衬套的可控温盘面结构，该结构包括铝盘1与陶瓷衬套9，所述铝盘1上设有三个通孔A2和九个通孔B3，铝盘1的内部还设有传热通道4，所述传热通道4上设有进口5和出口6；所述陶瓷衬套9上设有凸台8和边沿7，陶瓷衬套9的内部设有与所述三个通孔A2位置对应的三个顶升销套管13，每个顶升销套管13中有通孔C12，陶瓷衬套9内部还设有与所述九个通孔B3位置相对应的九个支撑柱14，陶瓷衬套9的底部设有孔A10与孔B11，所述孔A10与出口6相通，所述孔B11与入口5相通；所述传热通道4采用摩擦焊或钎焊的方式固定于铝盘1内部，所述铝盘1和陶瓷衬套9扣合固定，使陶瓷衬套9底部的三个顶升销套管13插入铝盘1边缘处的三个通孔A2内，使陶瓷衬套9设置的九个支撑柱14插入铝盘1中的九个通孔B3中。
所述九个支撑柱14插入九个通孔B3中使九个支撑柱14的顶端高于铝盘1的盘面。
所述九个支撑柱14的高度均相同。
所述传热通道4中通入液态传热介质或埋设加热丝来实现温度控制。
使用时，将铝盘1与陶瓷衬套9进行扣合，使陶瓷衬套9底部边缘设置的三个顶升销套管13插入铝盘1边缘处的三个通孔A2，实现薄膜衬底被传送时，顶升销在顶升销套管13中上下移动，顶起或放下薄膜衬底。使陶瓷衬套9底部设置的九个支撑柱14插入铝盘1盘面规律分布的通孔B3，加工陶瓷衬套9底部的支撑柱14时，控制高度，使插入后支撑柱14的顶端稍高于铝盘1盘面，实现对薄膜衬底的支撑作用。同时陶瓷衬套9边缘处薄膜衬底中心定位结构的凸台8和边沿7对薄膜衬底进行中心定位。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (4)

1.一种带有陶瓷衬套的可控温盘面结构，其特征在于，该结构包括铝盘与陶瓷衬套，所述铝盘上设有三个通孔A和九个通孔B，铝盘的内部还设有传热通道，所述传热通道上设有进口和出口；所述陶瓷衬套上设有凸台和边沿，陶瓷衬套的内部设有与所述三个通孔A位置对应的三个顶升销套管，每个顶升销套管中有通孔C，陶瓷衬套内部还设有与所述九个通孔位置相对应的九个支撑柱，陶瓷衬套的底部设有孔A与孔B，所述孔A与出口相通，所述孔B与入口相通；所述传热通道采用摩擦焊或钎焊的方式固定于铝盘内部，所述铝盘和陶瓷衬套扣合固定，使陶瓷衬套底部的三个顶升销套管插入铝盘边缘处的三个通孔A内，使陶瓷衬套设置的九个支撑柱插入铝盘中的九个通孔B中。
2.如权利要求1所述的一种带有陶瓷衬套的可控温盘面结构，其特征在于，所述九个支撑柱插入九个通孔B中使九个支撑柱的顶端高于铝盘1的盘面。
3.如权利要求1所述的一种带有陶瓷衬套的可控温盘面结构，其特征在于，所述九个支撑柱的高度均相同。
4.如权利要求1所述的一种带有陶瓷衬套的可控温盘面结构，其特征在于，所述传热通道中通入液态传热介质或埋设加热丝来实现温度控制。
CN201510725508.2A 2015-10-29 2015-10-29 一种带有陶瓷衬套的可控温盘面结构 Pending CN106653647A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109930132A (zh) * 2019-03-08 2019-06-25 沈阳拓荆科技有限公司 陶瓷环及具有陶瓷环的半导体反应腔体
CN110364409A (zh) * 2018-04-09 2019-10-22 Asm知识产权私人控股有限公司 衬底支撑设备、包含其的衬底处理设备以及衬底处理方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110364409A (zh) * 2018-04-09 2019-10-22 Asm知识产权私人控股有限公司 衬底支撑设备、包含其的衬底处理设备以及衬底处理方法
CN109930132A (zh) * 2019-03-08 2019-06-25 沈阳拓荆科技有限公司 陶瓷环及具有陶瓷环的半导体反应腔体

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