CN106646864B - Film resistor array infrared scene generation device and working method - Google Patents
Film resistor array infrared scene generation device and working method Download PDFInfo
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- CN106646864B CN106646864B CN201611069645.6A CN201611069645A CN106646864B CN 106646864 B CN106646864 B CN 106646864B CN 201611069645 A CN201611069645 A CN 201611069645A CN 106646864 B CN106646864 B CN 106646864B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
Abstract
The invention discloses a film resistor array infrared scene generation device, which comprises an image generation device, a film resistor array driving device, a film resistor array and an infrared optical device which are sequentially connected, and further comprises an environment control device, wherein the environment control device is connected with the film resistor array; the infrared optical device is used for being connected with the infrared imaging detection device. The film resistor array infrared scene generation device is good in matching performance and wide in application range.
Description
Technical Field
The invention belongs to the technical field of simulation, and particularly relates to a thin film resistor array infrared scene generation device and a working method.
Background
Thin film resistor arrays are one type of high-precision, large-scale integrated, application-specific electronic device that can produce thermal images. It is generally combined with optical system, electronic driving system, image computer generating system and mechanical system to form an infrared scene generating system. The system is an important component subsystem of a hardware-in-loop simulation system, and is mainly applied to testing and simulation of an infrared imaging system, such as a missile position marker, an infrared imaging alarm, an infrared imaging observer and the like. At present, the design, production and use of the device are intensively studied abroad, and for example, honeywell and SBIR companies in the united states have related products which are reported in the open. Several infrared scene generation systems with thin film resistor arrays as core components have been successfully built by the U.S. military, and are put into testing, simulation and evaluation of various infrared imaging guided weapon systems.
The particularity of the application of the thin film resistor array enables the main technology of China in the field and an infrared scene generating device based on the thin film resistor array to be blocked abroad. At present, china develops a second-generation film resistor array chip preparation technology, and a film resistor array chip is produced based on the independent proprietary technology. The infrared scene generating device using the thin film resistor array is substantially different from other projection display devices (such as a projection display system based on a DMD), for example, the thin film resistor array needs a special electronic driving device, a harsh environment control device, and the like. With other projection display devices, the frame rate is low and the temperature range is narrow.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a thin film resistor array infrared scene generation apparatus with good matching performance and wide application range and a working method thereof, aiming at the defects of the prior art.
In order to solve the technical problems, the invention adopts the technical scheme that the film resistor array infrared scene generation device comprises an image generation device, a film resistor array driving device, a film resistor array and an infrared optical device which are sequentially connected, and further comprises an environment control device, wherein the environment control device is connected with the film resistor array; the infrared optical device is used for being connected with the infrared imaging detection device; the image generation device is used for generating infrared scene image data and sending the infrared scene image data to the thin film resistor array driving device; the thin film resistor array driving device is used for receiving the image data sent by the image generating device, carrying out non-uniformity and non-linear correction on the image data, completing format conversion of the image data and generating a logic time sequence signal required for driving the thin film resistor array to work; converting the converted image data into analog voltage through a multi-path synchronous D/A array; the environment control device is used for controlling the environment requirement required by the thin film resistor array; the thin film resistor array is used for generating an infrared radiation image under the control of the thin film resistor array driving device; the infrared optical device is used for projecting an infrared image generated by the thin film resistor array onto the array surface of the infrared imaging detection device after being collimated.
Further, the environment control device comprises a temperature control device and a vacuum control device, wherein the temperature control device is used for controlling the temperature of the thin film resistor array substrate; the vacuum control device is used for controlling the atmospheric pressure in the thin film resistor array vacuum cavity during working.
Further, the thin film resistor array is a 256 × 256 element thin film resistor array.
Furthermore, the thin film resistor array driving device comprises an image data processing and sending board, an image data receiving and driving logic board and a multi-path high-speed synchronous D/A array board which are in signal connection in sequence, wherein the image data processing and sending board, the image data receiving and driving logic board and the multi-path high-speed synchronous D/A array board are separately arranged, and the image data processing and sending board is used for being connected with an image computer bus or an interface; the multi-path high-speed synchronous D/A array board and the image data receiving and driving logic board are both used for being connected with the thin film resistor array.
The image data processing and transmitting board is used for receiving and buffering image data sent by an image computer, performing non-uniform and non-linear correction on the buffered image data, then performing drive format conversion on the corrected image data, and transmitting the image data after the drive format conversion. The image data receiving and driving logic board is used for receiving and buffering image data sent by the image data processing and sending board, generating driving logic signals required by controlling the D/A array, and synchronously transmitting the driving logic signals and the image data to the multi-path high-speed synchronous D/A array board; and is also used for: generating a time sequence logic signal required for driving the thin film resistor array according to the driving logic time sequence requirement of the thin film resistor array; the multi-path high-speed synchronous D/A array board is used for receiving the image data and driving the driving logic signal and the image data sent by the driving logic board, driving the multi-path D/A array to work synchronously, converting the image data into a voltage signal for driving the thin film resistor array to display, and transmitting the voltage signal to the thin film resistor array.
The invention also discloses a working method of the film resistor array infrared scene generation device, which comprises the following steps:
the image generating device generates infrared scene image data and sends the infrared scene image data to the thin film resistor array driving device, and the thin film resistor array driving device receives the image data given by the image generating device, performs non-uniformity and non-linear correction on the image data, completes format conversion of the image data and generates a logic time sequence signal required by driving the thin film resistor array to work; the film resistor array generates an infrared radiation image under the control of the film resistor array driving device and transmits the infrared radiation image to the infrared optical device, and the infrared optical device collimates the infrared image generated by the film resistor array and then projects the infrared image onto the array surface of the infrared imaging detection device; in the transmission working process, the environment control device controls the environment requirement required by the thin film resistor array.
The film resistor array infrared scene generation device has the following advantages: the device can be used for testing and semi-physical simulation of various infrared imaging detection and guidance systems (such as scanning type and staring type), can perform good matching test no matter how long the integration time of the infrared detector is, and has the characteristics that the infrared image generated by the device has wide effective radiation wave band (2-12 mu m) and large radiation temperature range (room temperature-350 ℃).
Drawings
FIG. 1 is a schematic structural diagram of an infrared scene generating device of a thin film resistor array according to the present invention;
FIG. 2 is a schematic structural diagram of a thin film resistor array driving device according to the present invention;
FIG. 3 is a schematic diagram of an image data processing and transmitting board according to the present invention;
FIG. 4 is a schematic diagram of the image data receiving and driving logic board and the external connection according to the present invention;
wherein: 1. an image generating device; 2. a thin film resistor array driving device; 2-1, an image data processing and transmitting board; 2-2, receiving and driving the image data by a logic board; 2-3, multi-path high-speed synchronous D/A array plate; 2-11 a first memory; 2-12. A non-uniformity and non-linearity correction circuit; 2-13. Format conversion circuit; 2-14, high-speed communication sending interface; 2-21. A second memory; 2-22. Logic generation and D/A control logic circuit; 2-23 logic level conversion circuit; 2-24. High speed communication receiving interface; 3. an environmental control device; 3-1, a temperature control device; 3-2, a vacuum control device; 4. a thin film resistor array; 5. an infrared optical device; 6. an infrared imaging detection device.
Detailed Description
The invention relates to a film resistor array infrared scene generation device, which comprises an image generation device 1, a film resistor array driving device 2, a film resistor array 4, an infrared optical device 5 and an environment control device 3, wherein the image generation device 1, the film resistor array driving device 2, the film resistor array 4 and the infrared optical device 5 are sequentially connected, and the environment control device 3 is connected with the film resistor array 4; the infrared optical device 5 is used for being connected with an infrared imaging detection device 6.
The image generating device 1 is used for generating infrared scene image data and sending the infrared scene image data to the thin film resistor array driving device 2; optionally, a high performance graphics workstation, such as Z800 from Hp corporation, generates infrared image sequence data with a radiance resolution of 16 bits as required, and sends the image sequence data to the thin film resistor array driver via the DVI video interface on the workstation. An image-generating computer may also be used.
The thin film resistor array driving device 2 is configured to receive image data sent by the image generating device, perform non-uniformity and non-linearity correction on the image data, complete format conversion on the image data, and generate logic timing signals required for driving the thin film resistor array to operate, where the logic timing signals include a row clock signal, a row strobe signal, a row reset signal, a column clock signal, a column strobe signal, and a column reset signal. And converting the converted image data into analog voltage through a multi-path synchronous D/A array, and driving the thin film resistor array 4 to work. The environment control device 5 is used for controlling the environment requirements required by the thin film resistor array; the thin film resistor array 4 is used for generating an infrared radiation image under the control of the thin film resistor array driving device 2; the infrared optical device 5 is used for projecting the infrared image generated by the thin film resistor array 4 onto the front surface of the infrared imaging detection device 6 after being collimated. The parameters of the infrared optical device are as follows: the long wave band is 2-12 μm. The device can be independently selected and designed according to the working waveband and the optical parameters of the infrared imaging detection device to be tested.
The environment control device 3 comprises a temperature control device 3-1 and a vacuum control device 3-2, wherein the temperature control device 3-1 is used for controlling the temperature of the thin film resistor array substrate; the vacuum control device 3-2 is used for controlling the atmospheric pressure in the thin film resistor array vacuum cavity during working. And detecting the temperature in the sealed cavity of the thin film resistor array by using a thermocouple, and controlling the temperature of the substrate of the thin film resistor array by using a semiconductor refrigerator, wherein the temperature of the substrate is controlled to be 0 ℃ and the control precision is +/-2 ℃. Meanwhile, a water-cooling circulator is used for assisting the semiconductor refrigerator to control the temperature; the oil-free vacuum molecular pump is used for vacuumizing the film resistor array sealed cavity, the gauge tube is used for detecting the vacuum degree in the sealed cavity, and the air pressure in the sealed cavity is not more than 15Pa when the film resistor array is driven. The thin film resistor array 4 is a 256 × 256 element thin film resistor array.
As shown in fig. 2, the thin film resistor array driving device 2 includes an image data processing and sending board 2-1, an image data receiving and driving logic board 2-2, and a multi-path high-speed synchronous D/a array board 2-3, which are sequentially connected by signals, the image data processing and sending board 2-1 is placed separately from the image data receiving and driving logic board 2-2 and the multi-path high-speed synchronous D/a array board 2-3, and the image data processing and sending board 2-1 is used for connecting with an image computer bus or an interface; the multi-path high-speed synchronous D/A array board 2-3 and the image data receiving and driving logic board 2-2 are also used for being connected with the thin film resistor array 4.
The image data processing and transmitting board 2-1 is used for receiving and buffering image data sent by an image computer, performing non-uniform and non-linear correction on the buffered image data, performing drive format conversion on the corrected image data, and transmitting the image data after the drive format conversion;
the image data receiving and driving logic board 2-2 is used for receiving and buffering image data sent by the image data processing and sending board 2-1, generating driving logic signals required by controlling the D/A array, and synchronously transmitting the driving logic signals and the image data to the multi-path high-speed synchronous D/A array board; and is also used for: and generating a time sequence logic signal required for driving the thin film resistor array 4 according to the driving logic time sequence requirement of the thin film resistor array 4.
The multi-path high-speed synchronous D/A array board 2-3 is used for receiving the image data and driving logic signals and image data sent by the driving logic board 2-2, driving the multi-path D/A array to work synchronously, converting the image data into voltage signals for driving the thin film resistor array to display, and transmitting the voltage signals to the thin film resistor array 4.
The image data processing and transmitting board 2-1 as shown in fig. 3 includes a first memory 2-11, a non-uniformity and non-linearity correcting circuit 2-12, a format converting circuit 2-13 and a high-speed communication transmitting interface 2-14 which are connected in sequence; the first memory 2-11 is used for connecting with the image generating device 1 and buffering data; the high-speed communication interface 2-14 is used for connecting with the image data receiving and driving logic board 2-2. The non-uniformity and non-linearity correction circuits 2-12 comprise a first FPGA chip, a dual-port RAM and a second FPGA chip which are connected in sequence; the first FPGA chip is used for completing non-uniformity and non-linear correction of images and writing corrected data into the two dual-port RAMs alternately, the second FPGA chip reads data from the dual-port RAMs and carries out format conversion, and then the converted data are sent to the image data receiving and driving logic board 2-2 through the optical fiber high-speed communication interface.
As shown in fig. 4, the image data receiving and driving logic board 2-2 includes a high-speed communication receiving interface 2-24, a second memory 2-21, a logic generating and D/a control logic circuit 2-22 and a logic level converting circuit 2-23 connected in sequence; the logic generation and D/A control logic circuit is used for generating a D/A array control signal; the logic level conversion circuits 2-23 are used for generating thin film resistor array logic driving control signals; the high-speed communication receiving interfaces 2-24 are connected with the high-speed communication transmitting interfaces 2-14. The logic generation and D/A control logic circuit 2-22 comprises a third FPGA chip arranged on the image data receiving and driving logic board 2-2, and the third FPGA chip is used for extracting image data from the second memory 2-21, generating a D/A array control signal, synchronously sending the control signal and the image data to the D/A array, and simultaneously generating a logic driving control signal of the thin film resistor array.
The invention discloses a working method of the film resistor array infrared scene generation device, which comprises the following steps:
the image generating device 1 generates image data of an infrared scene and sends the image data to the thin film resistor array driving device 2, the thin film resistor array driving device 2 receives the image data sent by the image generating device, non-uniformity and non-linearity correction of the image data are carried out, format conversion of the image data is completed, and a logic time sequence signal required by driving the thin film resistor array 4 to work is generated; the thin film resistor array 4 generates an infrared radiation image under the control of the thin film resistor array driving device 2 and transmits the infrared radiation image to the infrared optical device 5, and the infrared optical device 5 collimates the infrared image generated by the thin film resistor array and then projects the infrared image onto the array surface of the infrared imaging detection device 6; in the transmission process, the environment control device 3 controls the environment requirement required by the thin film resistor array 4.
Claims (6)
1. The device for generating the infrared scene of the thin film resistor array is characterized by comprising an image generation device (1), a thin film resistor array driving device (2), the thin film resistor array (4), an infrared optical device (5) and an environment control device (3), wherein the image generation device, the thin film resistor array driving device and the infrared optical device are sequentially connected, and the environment control device (3) is connected with the thin film resistor array (4); the infrared optical device (5) is used for being connected with the infrared imaging detection device (6);
the image generation device (1) is used for generating infrared scene image data and sending the infrared scene image data to the thin film resistor array driving device (2);
the thin film resistor array driving device (2) is used for receiving the image data sent by the image generating device, carrying out non-uniformity and non-linear correction on the image data, completing format conversion of the image data and generating a logic time sequence signal required for driving the thin film resistor array to work; converting the converted image data into analog voltage through a multi-path synchronous D/A array;
the environment control device (3) is used for controlling the environment requirement required by the thin film resistor array;
the thin film resistor array (4) is used for generating an infrared radiation image under the control of the thin film resistor array driving device (2);
the infrared optical device (5) is used for projecting an infrared image generated by the thin film resistor array (4) to the array surface of the infrared imaging detection device (6) after being collimated.
2. The thin film resistor array infrared scene generating device as claimed in claim 1, wherein said environment control device (3) comprises a temperature control device (3-1) and a vacuum control device (3-2), said temperature control device (3-1) is used for controlling the temperature of the thin film resistor array substrate; the vacuum control device (3-2) is used for controlling the atmospheric pressure in the thin film resistor array vacuum cavity during working.
3. The infrared scene generator of claim 2, wherein said thin film resistor array (4) is a 256 x 256 element thin film resistor array.
4. A thin film resistive array infrared scene producing apparatus as defined in claim 3, wherein the parameters of said infrared optical means are as follows: the long wave band is 2-12 μm.
5. The thin film resistor array infrared scene generating device as claimed in claim 3 or 4, wherein the thin film resistor array driving device (2) comprises an image data processing and transmitting board (2-1), an image data receiving and driving logic board (2-2) and a multi-path high-speed synchronous D/A array board (2-3) which are connected in sequence by signals, the image data processing and transmitting board (2-1) is arranged separately from the image data receiving and driving logic board (2-2) and the multi-path high-speed synchronous D/A array board (2-3), and the image data processing and transmitting board (2-1) is used for connecting with an image computer bus or interface; the multi-path high-speed synchronous D/A array board (2-3) and the image data receiving and driving logic board (2-2) are also used for being connected with the thin film resistor array (4);
the image data processing and transmitting board (2-1) is used for receiving and buffering image data transmitted by an image computer, performing non-uniform and non-linear correction on the buffered image data, performing drive format conversion on the corrected image data, and transmitting the image data after the drive format conversion;
the image data receiving and driving logic board (2-2) is used for receiving and buffering image data sent by the image data processing and sending board (2-1), generating driving logic signals required by a control D/A array, and synchronously transmitting the driving logic signals and the image data to the multi-path high-speed synchronous D/A array board; and is also used for: generating a time sequence logic signal required for driving the thin film resistor array (4) according to the driving logic time sequence requirement of the thin film resistor array (4);
the multi-channel high-speed synchronous D/A array board (2-3) is used for receiving the image data and driving logic signals and image data sent by the driving logic board (2-2), driving the multi-channel D/A array to work synchronously, converting the image data into voltage signals for driving the thin film resistor array to display, and transmitting the voltage signals to the thin film resistor array (4).
6. The method for operating a thin film resistor array infrared scene generating device according to any one of claims 1 to 5, characterized in that the method comprises the following steps:
the image generating device (1) generates infrared scene image data and sends the infrared scene image data to the thin film resistor array driving device (2), and the thin film resistor array driving device (2) receives the image data sent by the image generating device, performs non-uniformity and non-linear correction on the image data, completes format conversion of the image data and generates a logic time sequence signal required by driving the thin film resistor array (4) to work; the film resistor array (4) generates an infrared radiation image under the control of the film resistor array driving device (2) and transmits the infrared radiation image to the infrared optical device (5), and the infrared optical device (5) collimates the infrared image generated by the film resistor array and then projects the infrared image onto the array surface of the infrared imaging detection device (6); in the transmission working process, the environment control device (3) controls the environment requirement required by the thin film resistor array (4).
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| CN107367374A (en) * | 2017-09-19 | 2017-11-21 | 北京仿真中心 | A kind of infrared imaging scenario simulation device and its method of work |
| CN108627251B (en) * | 2018-06-22 | 2020-06-02 | 北京仿真中心 | Active radiation infrared scene conversion system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4769527A (en) * | 1985-09-04 | 1988-09-06 | British Aerospace Plc | Thermal image generating device |
| JP2012093099A (en) * | 2010-10-25 | 2012-05-17 | Shimadzu Corp | Flow sensor and infrared gas analyzer |
| CN206235777U (en) * | 2016-11-29 | 2017-06-09 | 西安天圆光电科技有限公司 | A kind of film resistor battle array IR Scene generation device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4769527A (en) * | 1985-09-04 | 1988-09-06 | British Aerospace Plc | Thermal image generating device |
| JP2012093099A (en) * | 2010-10-25 | 2012-05-17 | Shimadzu Corp | Flow sensor and infrared gas analyzer |
| CN206235777U (en) * | 2016-11-29 | 2017-06-09 | 西安天圆光电科技有限公司 | A kind of film resistor battle array IR Scene generation device |
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