CN106601832A - Main grid line structure of solar cell piece - Google Patents
Main grid line structure of solar cell piece Download PDFInfo
- Publication number
- CN106601832A CN106601832A CN201510661008.7A CN201510661008A CN106601832A CN 106601832 A CN106601832 A CN 106601832A CN 201510661008 A CN201510661008 A CN 201510661008A CN 106601832 A CN106601832 A CN 106601832A
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- China
- Prior art keywords
- main grid
- gate line
- grid line
- main gate
- main
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- 239000007787 solid Substances 0.000 claims abstract description 13
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000001788 irregular Effects 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000004513 sizing Methods 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 241001062009 Indigofera Species 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 230000011218 segmentation Effects 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- SJWPTBFNZAZFSH-UHFFFAOYSA-N pmpp Chemical compound C1CCSC2=NC=NC3=C2N=CN3CCCN2C(=O)N(C)C(=O)C1=C2 SJWPTBFNZAZFSH-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a main grid line structure of a solar cell piece. The main grid line structure is formed by four or more than four main grid lines; each main grid line is formed by parallel arrangement of two or more than two small main grid lines; and each small main grid line is formed by a plurality of hollow-out segments and solid segments in alternate arrangement, solid straight units, or combination of the a plurality of hollow-out segments and solid segments in alternate arrangement and the solid straight units. The solid segments of each small grid lines have oblong, elliptic, hexagonal, or irregular shapes; and the two ends of each small main grid line have square, elliptic, triangular, or irregular shapes. The main grid line structure has the following beneficial effects: the sizing agent usage amount of the main grid line as well as the leakage blue rate can be reduced; the tensile force of the main grid line can be improved; and thus the photoelectric conversion efficiency of the cell piece can be enhanced.
Description
Technical field
The present invention relates to crystal silicon solar batteries piece manufacture field, more particularly to a kind of main grid line structure of solar battery sheet.
Background technology
With the development of crystal silicon solar batteries technology, reducing its production cost becomes the problem of primary solution.At present, photovoltaic industry scholar research in this regard is concentrated mainly on surface shading loss, surface and falls into the aspect such as light and electrode contact.The usage amount that most of solar battery sheet producers are reduced surface shading and reduced silver paste using the method for reduction grid line width, hollow type and through type main gate line structure design.
At present, for many main grids（Four and more than）Design structure mostly be through type main grid, this through type main grid structure not only increases the usage amount of slurry, and reduces the light-receiving area of silion cell.Although slurry and increase light-receiving area can be reduced by the width of reduction main grid, reducing main grid width can affect the reliability of component, and substantially increase the leakage indigo plant rate of components welding.
The content of the invention
It is an object of the invention to provide a kind of main grid line structure of solar battery sheet, reduces the usage amount of slurry, the blue rate of components welding leakage is reduced, main gate line pulling force is improved and is improved the purpose of photoelectric transformation efficiency.
To reach above-mentioned purpose, the technical solution that the present invention is adopted is：A kind of main grid line structure of solar battery sheet, is made up of the main gate line of four and the above；Every main gate line is made up of side by side the little main gate line of two and the above；Per root, little main gate line is spaced by some hollow out sections and solid-section or is made up of solid straight-through shape or combined by said two devices；Per root, the figure of the solid-section of little main gate line is rectangle, ellipse, hexagon or irregularly shaped；Per root, the two ends of little main gate line are square, oval, triangle or irregularly shaped.
The invention has the beneficial effects as follows reducing the slurry usage amount of main gate line, the blue rate of components welding leakage is reduced, the pulling force of main gate line is improved, so as to improve the photoelectric transformation efficiency of cell piece.
Description of the drawings
The structure chart of Fig. 1 traditional segmentation main gate line
The Local map of Fig. 2 traditional segmentation main gate line
In figure：7 represent main grid line width, and 8 represent solid segment length, and 9 represent hollow out segment length.
The structure chart of the little main gate line segmentation entirety of Fig. 3 present invention
The Local map of the little main gate line segmentation of Fig. 4 present invention
In figure：1 and 3 represent little main grid width, and 2 represent little main grid spacing, and 4 represent hollow out segment length, and 5 represent solid segment length, and 6 represent main grid line width.
The structure chart of Fig. 5 traditional solid main gate line
In figure：10 represent main grid line width.
The solid straight-through structure chart of little main gate line of Fig. 6 present invention
In figure：11 and 13 width for representing the little main gate line per root；12 spacing for representing adjacent two little main grids；14 width for representing whole main gate line.
Specific embodiment
Below in conjunction with the accompanying drawings the present invention is described in further detail.
In the present embodiment, using 156cm*156cm polysilicon chips and the production technology of the polycrystalline silicon battery plate of routine.
In the present embodiment, the structure design of traditional main gate line is as shown in figure 1, the design size of main gate line is as follows：Main grid line width 7 is 1.1mm, and solid segment length 8 is 7.8mm, and hollow out segment length 9 is 11.2mm, and every main gate line is spaced with seven sections of hollow out sections by eight sections of solid-sections.
Embodiment one：
In the present embodiment, it is described in further detail with reference to 4 couples of present invention of accompanying drawing 3 and accompanying drawing.Design size using the design of main gate line in the present invention is as follows：Main grid line width 6 is 1.2mm, and solid segment length 5 is 5.5mm, and hollow out segment length 4 is 13.5mm, and little main grid width 1 is 0.5mm, and little main grid line width 3 is 0.3mm, and little main grid distance between centers of tracks 2 is 0.4mm.
Main grid line structure is different, under the conditions of other production technology identicals, polysilicon solar battery slice is prepared, and the unit for electrical property parameters of the polycrystalline silicon battery plate to preparing, slurry usage amount, main gate line pulling force and the blue rate of leakage are analyzed.Table 1 is the unit for electrical property parameters using traditional main gate line design structure with the cell piece of the main gate line design structure preparation of the present invention, by being that the relative analyses of unit for electrical property parameters can be learnt in table 1, the photoelectric transformation efficiency of the polycrystalline silicon battery plate prepared using the main gate line design structure of the present invention improves 0.07% compared with traditional main gate line design structure.Table 2 is to adopt traditional main gate line design structure and the main gate line design structure of the present invention to prepare slurry usage amount, pulling force and leakage indigo plant rate data during cell piece, by the related data relative analyses of table 2, can learn, using main gate line design of the present invention, slurry usage amount reduces 5.6%, pulling force improves 0.9N, and the blue rate of component leakage reduces 0.14%.
The unit for electrical property parameters of the cell piece that table 1 is prepared with main gate line design structure of the invention using traditional main gate line design structure
| NCell | Uoc | Isc | Rs | Rsh | FF | Pmpp | Umpp | Impp | |
| New main gate line | 18.47% | 0.6373 | 8.9282 | 0.00216 | 129.06 | 79.01 | 4.495 | 0.5373 | 8.3663 |
| Traditional main gate line | 18.40% | 0.6374 | 8.9026 | 0.00229 | 85.99 | 78.89 | 4.477 | 0.5368 | 8.3390 |
Table 2 adopts traditional main gate line design structure and the main gate line design structure of the present invention to prepare slurry usage amount, pulling force and leakage indigo plant rate data during cell piece
| Slurry usage amount | Pulling force | The blue rate of leakage | |
| New main gate line | 0.101g | 4.1N | 0.24% |
| Traditional main gate line | 0.107g | 3.2N | 0.10% |
Embodiment two：
In the present embodiment, it is described in further detail with reference to 5 couples of present invention of accompanying drawing.Design size using the design of main gate line in the present invention is as follows：Main grid width 14 is 1.2mm, and little main grid width 11 is 0.4mm, and little main grid width 13 is 0.4mm, and adjacent little main grid spacing 12 is 0.4mm.
Main grid line structure is different, under the conditions of other production technology identicals, polysilicon solar battery slice is prepared, and the unit for electrical property parameters of the polycrystalline silicon battery plate to preparing, slurry usage amount, main gate line pulling force are analyzed.Table 3 is the unit for electrical property parameters using traditional main gate line design structure with the cell piece of the main gate line design structure preparation of the present invention, by being that the relative analyses of unit for electrical property parameters can be learnt in table 3, the photoelectric transformation efficiency of the polycrystalline silicon battery plate prepared using the main gate line design structure of the present invention improves 0.04% compared with traditional main gate line design structure.Table 4 is that the main gate line design structure using traditional main gate line design structure with the present invention prepares slurry usage amount, pulling force data during cell piece, by the related data relative analyses of table 4, can learn, using main gate line design of the present invention, slurry usage amount reduces 4.38%, and pulling force improves 0.8N.
The unit for electrical property parameters of the cell piece that table 3 is prepared with main gate line design structure of the invention using traditional main gate line design structure
| NCell | Uoc | Isc | Rs | Rsh | FF | Pmpp | Umpp | Impp | |
| New main gate line | 18.30% | 0.6343 | 8.8848 | 0.00208 | 93.27 | 79.03 | 4.454 | 0.5342 | 8.3368 |
| Traditional main gate line | 18.26% | 0.6341 | 8.8863 | 0.00223 | 185.92 | 78.86 | 4.444 | 0.5331 | 8.3353 |
Table 4 adopts traditional main gate line design structure and the main gate line design structure of the present invention to prepare slurry usage amount, pulling force and leakage indigo plant rate data during cell piece
| Slurry usage amount | Pulling force | |
| New main gate line | 0.109g | 4.5N |
| Traditional main gate line | 0.114g | 3.7N |
Claims (4)
1. the main grid line structure of a kind of solar battery sheet, it is characterised in that：It is made up of the main gate line of four and the above, every main gate line is made up of side by side the little main gate line of two and the above.
2. the main grid line structure of a kind of solar battery sheet according to claim 1, it is characterised in that：The described little main gate line per root is spaced by some hollow out sections and solid-section or is made up of solid straight-through shape or combined by said two devices.
3. the main grid line structure of a kind of solar battery sheet according to claim 1, it is characterised in that：The described figure of the solid-section of little main gate line per root is rectangle, ellipse, hexagon or irregularly shaped.
4. the main grid line structure of a kind of solar battery sheet according to claim 1, it is characterised in that：The described two ends of little main gate line per root are square, oval, triangle or irregularly shaped.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510661008.7A CN106601832A (en) | 2015-10-15 | 2015-10-15 | Main grid line structure of solar cell piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510661008.7A CN106601832A (en) | 2015-10-15 | 2015-10-15 | Main grid line structure of solar cell piece |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106601832A true CN106601832A (en) | 2017-04-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510661008.7A Pending CN106601832A (en) | 2015-10-15 | 2015-10-15 | Main grid line structure of solar cell piece |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102810578A (en) * | 2012-08-27 | 2012-12-05 | 海南英利新能源有限公司 | Solar cell and main gate line thereof |
| CN203617305U (en) * | 2013-12-25 | 2014-05-28 | 常州天合光能有限公司 | Grid line structure of solar cell |
| CN103943698A (en) * | 2014-04-21 | 2014-07-23 | 衡水英利新能源有限公司 | Photovoltaic module with main grid lines arranged side by side |
| CN104282772A (en) * | 2013-07-12 | 2015-01-14 | 上海神舟新能源发展有限公司 | Positive electrode solar crystalline silicon battery with four main grid lines |
| CN205028904U (en) * | 2015-10-15 | 2016-02-10 | 浙江鸿禧能源股份有限公司 | Solar wafer's main grid line structure |
-
2015
- 2015-10-15 CN CN201510661008.7A patent/CN106601832A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102810578A (en) * | 2012-08-27 | 2012-12-05 | 海南英利新能源有限公司 | Solar cell and main gate line thereof |
| CN104282772A (en) * | 2013-07-12 | 2015-01-14 | 上海神舟新能源发展有限公司 | Positive electrode solar crystalline silicon battery with four main grid lines |
| CN203617305U (en) * | 2013-12-25 | 2014-05-28 | 常州天合光能有限公司 | Grid line structure of solar cell |
| CN103943698A (en) * | 2014-04-21 | 2014-07-23 | 衡水英利新能源有限公司 | Photovoltaic module with main grid lines arranged side by side |
| CN205028904U (en) * | 2015-10-15 | 2016-02-10 | 浙江鸿禧能源股份有限公司 | Solar wafer's main grid line structure |
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Application publication date: 20170426 |