CN106601600A - Method for improving photolithography technique - Google Patents
Method for improving photolithography technique Download PDFInfo
- Publication number
- CN106601600A CN106601600A CN201611234831.0A CN201611234831A CN106601600A CN 106601600 A CN106601600 A CN 106601600A CN 201611234831 A CN201611234831 A CN 201611234831A CN 106601600 A CN106601600 A CN 106601600A
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- China
- Prior art keywords
- photoetching
- photoresist
- improving
- substrate
- focal plane
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention provides a method for improving a photolithography technique. The method comprises steps that a substrate of which a surface has photoresist is provided, and different photolithography focal planes at different positions of the substrate and corresponding technology windows are acquired; according to a desired target pattern, the acquired different positions and the corresponding technology windows are combined; according to the technology windows after combination, different focal planes are selected for each position; another substrate of which a surface has photoresist is provided, for each position, the photolithography technique under the focal planes is implemented, photolithography for the photoresist is carried out, and the target pattern is acquired from the photoresist. The method is advantaged in that high-precision line width can be acquired, and controllable morphology of the pattern after photolithography is realized.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of method for improving photoetching process.
Background technology
As the sustainable development of integrated circuit technology, device feature live width are less and less, the requirement to photoetching process is also got over
Come higher.In order to be met the critical size (Critical Dimension, CD) and photoresist pattern of requirement, first have to into
Row depth of focus energy matrix (Focus Energy Matrix, FEM) is tested, to obtain suitable process conditions depth of focus and exposure energy
Amount, then carries out again photoetching process.
However, in photoetching process, focusing on and exposure energy no longer changing.Therefore, on the one hand, to single exposure area,
Process conditions may not forever be in optimised process state；On the other hand, to other exposure areas, this process conditions can
Deviation can occur；In a word, process window is smaller.
The content of the invention
In order to overcome problem above, the present invention is intended to provide a method for improving photoetching process, so as to expand photoetching process
Middle process window.
In order to achieve the above object, the invention provides a kind of method for improving photoetching process, it includes：
Step 01：The substrate that one surface has photoresist is provided, obtain substrate diverse location different photoetching focal planes and
Corresponding process window；
Step 02：According to the target pattern to be obtained, resulting diverse location and corresponding process window are carried out
Combination；Also, according to the process window after combination, for each position different focal planes are selected；
Step 03：The substrate that another surface has photoresist is provided, for each position, under implementing corresponding focal plane
Photoetching process, to carry out photoetching to photoresist, so as to obtain target pattern in the photoresist.
Preferably, in the step 01, the diverse location includes the diverse location distribution of substrate surface and patterned area.
Preferably, in the step 01, the figure that the process window of the substrate diverse location of acquisition is constituted includes：Inverted trapezoidal
And trapezoid.
Preferably, target pattern is rectangle, in the step 02, when carrying out the photoetching process, by inverted trapezoidal and positive ladder
Shape overlay, makes the central shaft of inverted trapezoidal and the center overlapping of axles of trapezoid, each the depth position from rectangular top to rectangular central portion
The photoetching put using inverted trapezoidal corresponding photoetching focal plane, from each depth location of bottom of the middle part of rectangle to rectangle
Photoetching adopts the corresponding photoetching focal plane of trapezoid.
Preferably, in the step 03, first, rectangular top is etched in the photoresist using the photoetching focal plane of inverted trapezoidal
Then portion, is etched in the photoresist from rectangular central portion to square to the pattern of rectangular central portion using the photoetching focal plane of trapezoid
The pattern of shape bottom.
Preferably, in the step 01, also include：During the corresponding exposure of the different focal planes for obtaining substrate diverse location
Between.
Preferably, also include in the step 02：According to the process window after combination, for each different photoetching position
Put, select different focal planes and corresponding time of exposure.
Preferably, also include in the step 03, for each photoetching position, implement corresponding time of exposure and focal plane
Under the conditions of photoetching process.
The method for improving photoetching process of the present invention, by obtaining different photoetching focal planes of substrate diverse location and corresponding
Process window；According to the target pattern to be obtained, resulting diverse location and corresponding process window are combined；
Also, according to the process window after combination, for each position different focal planes are selected；For each position, implement corresponding
Photoetching process under focal plane, to carry out photoetching to photoresist, so as to the photoetching pattern avoided for substrate diverse location floats
The problem of shifting.
Description of the drawings
Fig. 1 is the schematic flow sheet of the method for improving photoetching process of a preferred embodiment of the present invention
Fig. 2～4 are each step schematic diagram of the method for improving photoetching process of a preferred embodiment of the present invention
Specific embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Step explanation.Certainly the specific embodiment, the general replacement known to those skilled in the art be the invention is not limited in
Cover within the scope of the present invention.
A kind of method of improvement photoetching process of the present invention includes：
The substrate that one surface has photoresist is provided, the different photoetching focal planes of substrate diverse location and corresponding work is obtained
Skill window；
According to the target pattern to be obtained, resulting diverse location and corresponding process window are combined；And
And, according to the process window after combination, for each position different focal planes are selected；
The substrate that another surface has photoresist is provided, for each position, implements the photoetching work under corresponding focal plane
Skill, to carry out photoetching to photoresist, so as to obtain target pattern in the photoresist.
The present invention is described in further detail below in conjunction with accompanying drawing 1～4 and specific embodiment.It should be noted that, accompanying drawing
In the form of simplifying very much, using non-accurately ratio, and only conveniently, clearly to reach aid illustration the present embodiment
Purpose.
In the present embodiment, diverse location includes each depth location from substrate surface to substrate interior, refer to Fig. 1,
A kind of method of improvement photoetching process of the present embodiment includes：
Step 01：The substrate that a surface has photoresist is provided, the different photoetching for obtaining substrate different depth position are burnt flat
Face and corresponding process window；
Specifically, can be using the corresponding work of focal plane/exposure energy matrix method (FEM, Focus Energy Matrix)
Skill window.Wherein, diverse location includes the diverse location distribution of substrate surface and patterned area.Here, due to photoetching process bar
The restriction of part various factors, refers to Fig. 2, there is provided a surface has the substrate S of photoresist R, is generally directed to same target pattern
The figure that the process window of different depth position is constituted in acquired substrate has inverted trapezoidal (left side structure in Fig. 2) and trapezoid
(right side structure in Fig. 2), for example, the inverted trapezoidal and trapezoid for being obtained is isosceles trapezoid.This step 01 is gone back in the present embodiment
Including：Obtain the corresponding time of exposure of the different photoetching focal planes of substrate S diverse location.
Step 02：According to the target pattern to be obtained, resulting diverse location and corresponding process window are carried out
Combination；Also, according to the process window after combination, for each position different focal planes are selected；
Specifically, in this step 02, according to the process window after combination, for each diverse location, select different burnt flat
Face and corresponding time of exposure.The target pattern of the present embodiment is rectangle；Next describe in detail different depth position and
The particular content that corresponding process window is combined.In this step 02, Fig. 3 is referred to, inverted trapezoidal and trapezoid overlay make
The central shaft of inverted trapezoidal overlaps with the central shaft of trapezoid (vertical dotted line in figure), (Tu Zhongshui from rectangular top to rectangular central portion
Flat dotted line place depth) each depth location photoetching using inverted trapezoidal corresponding photoetching focal plane, from the middle part of rectangle
(horizontal dotted line place depth in figure) adopts the corresponding photoetching of trapezoid to the photoetching of each depth location of the bottom of rectangle
Focal plane.
Step 03：The substrate that another surface has photoresist is provided, for each position, under implementing corresponding focal plane
Photoetching process, to carry out photoetching to photoresist, so as to obtain target pattern in the photoresist；
Specifically, in this step 03, for each depth location, under implementing corresponding time of exposure and corresponding focal plane
Photoetching process.Refer to Fig. 4 and combine Fig. 3, first, existed using the photoetching focal plane and corresponding time of exposure of inverted trapezoidal
Rectangular top is etched in photoresist R to the pattern of rectangular central portion, then, using the photoetching focal plane of trapezoid and corresponding
Time of exposure etches the pattern from rectangular central portion to rectangular base in photoresist R, so as to obtain rectangular patterns.
For example, the photoetching total time of target pattern is t, using the photoetching process condition of inverted trapezoidal, is etched in the photoresist
Go out time of exposure that rectangular top adopted to the pattern of rectangular central portion for t/2, using the photoetching process condition of trapezoid in light
The time of exposure that the pattern from rectangular central portion to rectangular base is etched in photoresist is t/2.
It should be noted that only just overlap to be defined by the horizontal center line of inverted trapezoidal and trapezoid in the present embodiment carrying out
Illustrate, but in other embodiments of the invention, can be designing different photoetching works according to different lithographic process windows
The combination of skill condition, including the combination and the combination of corresponding photoetching time of focal plane.
Although the present invention is disclosed as above with preferred embodiment, right embodiment is illustrated only for the purposes of explanation, and
Be not used to limit the present invention, those skilled in the art can make without departing from the spirit and scope of the present invention it is some more
Dynamic and retouching, the protection domain that the present invention is advocated should be defined by claims.
Claims (8)
1. a kind of method for improving photoetching process, it is characterised in that include：
Step 01：The substrate that one surface has photoresist is provided, different photoetching focal planes of substrate diverse location and corresponding are obtained
Process window；
Step 02：According to the target pattern to be obtained, resulting diverse location and corresponding process window are combined；
Also, according to the process window after combination, for each position different photoetching focal planes are selected；
Step 03：The substrate that another surface has photoresist is provided, for each position, under implementing corresponding photoetching focal plane
Photoetching process, to carry out photoetching to photoresist, so as to obtain target pattern in the photoresist.
2. the method for improving photoetching process according to claim 1, it is characterised in that in the step 01, the difference
Position includes the diverse location distribution of substrate surface and patterned area.
3. the method for improving photoetching process according to claim 1, it is characterised in that in the step 01, the lining of acquisition
The figure that the process window of bottom diverse location is constituted includes：Inverted trapezoidal and trapezoid.
4. the method for improving photoetching process according to claim 3, it is characterised in that target pattern is rectangle, the step
In rapid 02, when carrying out the photoetching process, by inverted trapezoidal and trapezoid overlay, the central shaft of inverted trapezoidal and the center of trapezoid are made
Overlapping of axles, the photoetching of each depth location from rectangular top to rectangular central portion adopts the corresponding photoetching focal plane of inverted trapezoidal,
The corresponding photoetching focal plane of trapezoid is adopted from the photoetching of each depth location of bottom of the middle part of rectangle to rectangle.
5. the method for improving photoetching process according to claim 4, it is characterised in that in the step 03, first, adopts
The photoetching focal plane of inverted trapezoidal etches in the photoresist rectangular top to the pattern of rectangular central portion, then, using trapezoid
Photoetching focal plane etches in the photoresist the pattern from rectangular central portion to rectangular base.
6. the method for improving photoetching process according to claim 1, it is characterised in that in the step 01, also include：Obtain
Take the corresponding time of exposure of the different photoetching focal planes of substrate diverse location.
7. the method for improving photoetching process according to claim 6, it is characterised in that also include in the step 02：Root
According to the process window after combination, for each different photoetching position, when selecting different photoetching focal planes and exposing accordingly
Between.
8. the method for improving photoetching process according to claim 6, it is characterised in that also include in the step 03, pin
To each photoetching position, implement corresponding time of exposure and the photoetching process under the conditions of photoetching focal plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611234831.0A CN106601600A (en) | 2016-12-28 | 2016-12-28 | Method for improving photolithography technique |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611234831.0A CN106601600A (en) | 2016-12-28 | 2016-12-28 | Method for improving photolithography technique |
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| Publication Number | Publication Date |
|---|---|
| CN106601600A true CN106601600A (en) | 2017-04-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611234831.0A Pending CN106601600A (en) | 2016-12-28 | 2016-12-28 | Method for improving photolithography technique |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020005496A1 (en) * | 2000-07-11 | 2002-01-17 | Kazuo Sakamoto | Apparatusn for determining exposure conditions, method for determining exposure conditions and process apparatus |
| CN1732412A (en) * | 2002-12-30 | 2006-02-08 | 皇家飞利浦电子股份有限公司 | A method of determining best process setting for optimum process window optimizing process performance determining optimum process window for a lithographic process |
| US20060183040A1 (en) * | 2005-02-16 | 2006-08-17 | Hideaki Sasazawa | Method for controlling semiconductor device production process and a method for producing semiconductor devices |
| CN104570593A (en) * | 2013-10-29 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Photoetching method for coating material |
-
2016
- 2016-12-28 CN CN201611234831.0A patent/CN106601600A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020005496A1 (en) * | 2000-07-11 | 2002-01-17 | Kazuo Sakamoto | Apparatusn for determining exposure conditions, method for determining exposure conditions and process apparatus |
| CN1732412A (en) * | 2002-12-30 | 2006-02-08 | 皇家飞利浦电子股份有限公司 | A method of determining best process setting for optimum process window optimizing process performance determining optimum process window for a lithographic process |
| US20060183040A1 (en) * | 2005-02-16 | 2006-08-17 | Hideaki Sasazawa | Method for controlling semiconductor device production process and a method for producing semiconductor devices |
| CN104570593A (en) * | 2013-10-29 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Photoetching method for coating material |
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Application publication date: 20170426 |
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