TWI589987B - Method for separating photomask pattern - Google Patents
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本發明係有關於半導體製程領域,由其是關於一種光罩圖案的分割方法。 The present invention relates to the field of semiconductor processing, and relates to a method of dividing a reticle pattern.
光學微影技術是半導體製程中重要的一環,其基本原理與化學性的攝影技術十分類似,圖案化的光罩影像會藉由高精度的光學系統投射到晶圓表面所塗佈的感光化合物層(如光阻)上。在經過曝光、顯影後烘烤、以及乾/濕蝕刻等後續的複合化學反應及製程步驟後,晶圓表面上即可形成複雜的線路圖形。 Optical lithography is an important part of semiconductor manufacturing. Its basic principle is very similar to that of chemical photographic technology. The patterned reticle image is projected onto the surface of the wafer by a high-precision optical system. (such as photoresist). After subsequent composite chemical reactions and process steps such as exposure, post-development bake, and dry/wet etching, complex wiring patterns can be formed on the wafer surface.
在半導體製程中,隨著所需的圖形特徵尺度與光學微影術所使用波長之間的差距越來越大,最終所形成的晶圓影像會與原始光罩上的圖形有相當的差異。過去,為了要達到所需的圖形密度,解析度增強技術已成為了半導體製程中的必要技術手段。其中一個熟知的解析度增強技術即為光學近似校正(OPC),其作法中會刻意使部分的目標光阻圖形失真以在晶圓上形成所欲優化後的線路圖形。現今,半導體製程中有相當程度的時間與電腦計算會被用在這類線路佈局的後製步驟中。 In the semiconductor process, as the required difference between the scale of the feature features and the wavelength used by the optical lithography becomes larger, the resulting wafer image will be quite different from the pattern on the original mask. In the past, in order to achieve the required pattern density, resolution enhancement technology has become a necessary technical means in semiconductor manufacturing. One well-known resolution enhancement technique is Optical Approximation Correction (OPC), which deliberately distort portions of the target photoresist pattern to form the desired line pattern on the wafer. Today, considerable time and computer computing in semiconductor manufacturing processes are used in the post-production steps of such line layouts.
除了上述的光學近似校正技術,為了使用相同的微影技術來使半導體元件的尺寸能再進一步縮小到深次微米的領域,名為雙重圖案(double patterning)的製程被開發來作為一可克服尺寸限縮挑戰同時又能節省成本的技術手段。上述雙重圖案的其中一熱門方法 即為雙重曝光(double exposure)微影技術,其原理在於將一給定的線路佈局圖案(layout pattern)拆分為兩組圖案,每一組圖案係使用個別的光罩在個別的曝光製程中定義形成,兩組圖案最後可共同構成一所欲疊合後的線路圖案。 In addition to the optical approximation correction technique described above, in order to use the same lithography technology to further reduce the size of semiconductor components to the deep submicron range, a process called double patterning has been developed as an overcoming size. A technical means of limiting costs while saving costs. One of the popular methods of the above double pattern That is double exposure lithography, the principle is to split a given layout pattern into two groups of patterns, each group using individual masks in individual exposures The process is defined and formed, and the two sets of patterns can finally form a line pattern to be superposed.
雙重曝光微影技術的最大優點在於其可使用現有的微影技術和機台來製作密度更大、間距更小的線路圖案。然而,在實作中,該技術仍有些許問題有待改進,目前業界仍須對現有的雙重曝光圖形拆分作法作進一步的改良。 The biggest advantage of dual exposure lithography is that it can use existing lithography and machines to create denser, smaller pitch line patterns. However, in practice, there are still some problems to be solved in this technology. At present, the industry still needs to further improve the existing double exposure graphics splitting method.
雙重曝光微影技術的其中一問題在於,將線路佈局圖案拆分為兩組圖案的步驟,主要由電腦程式進行,然而交由程式所完成的兩組圖案,容易有兩組圖案分配密度不均的問題,進而影響到曝光步驟的良率。 One of the problems with the double exposure lithography technique is that the step of splitting the line layout pattern into two sets of patterns is mainly performed by a computer program. However, it is easy to have two sets of pattern assignments by the two sets of patterns completed by the program. The problem of uneven density, which in turn affects the yield of the exposure step.
為解決上述問題,本發明提供一種光罩圖案的分割方法,至少包含有以下步驟:首先,提供至少一佈局圖案,將該佈局圖案定義為至少一臨界間距圖案以及至少一非臨界間距圖案,接著進行一第一分割步驟,將各該臨界間距圖案分為複數個第一圖案以及複數個第二圖案,然後進行一第二分割步驟,將各該非臨界間距圖案分為複數個第三圖案以及複數個第四圖案,最後將各該第一圖案與各該第三圖案輸出到一第一光罩,並將各該第二圖案以及各該第四圖案輸出到一第二光罩上。 In order to solve the above problems, the present invention provides a method for dividing a reticle pattern, comprising at least the following steps: First, providing at least one layout pattern, the layout pattern being defined as at least one critical pitch pattern and at least one non-critical spacing pattern, and then Performing a first dividing step, dividing each of the critical pitch patterns into a plurality of first patterns and a plurality of second patterns, and then performing a second dividing step, dividing each of the non-critical spacing patterns into a plurality of third patterns and a plurality of And a fourth pattern, and finally outputting each of the first patterns and each of the third patterns to a first mask, and outputting each of the second patterns and each of the fourth patterns to a second mask.
本發明與傳統光罩分割步驟不同之處,在於更多出了一第二分割步驟,用以將傳統步驟中不重視的非臨界間距圖案也進行分割,藉由此第二分割步驟,使線路佈局圖案中無論是臨界間距圖案或是非臨界間距圖案都可以均分於兩組圖案上,避免兩組圖案分配不均的問題,進而提昇曝光步驟的良率。 The difference between the present invention and the conventional reticle segmentation step is that a second segmentation step is further used to divide the non-critical pitch pattern that is not emphasized in the conventional step, thereby making the line by the second segmentation step. In the layout pattern, both the critical pitch pattern and the non-critical pitch pattern can be equally divided into two groups of patterns, thereby avoiding the problem of uneven distribution of the two groups of patterns, thereby improving the yield of the exposure step.
10‧‧‧佈局圖案 10‧‧‧ layout pattern
20‧‧‧臨界間距區 20‧‧‧critical spacing zone
22‧‧‧臨界圖案 22‧‧‧critical pattern
24‧‧‧第一圖案 24‧‧‧ first pattern
26‧‧‧第二圖案 26‧‧‧second pattern
30‧‧‧非臨界間距區 30‧‧‧Non-critical spacing zone
32‧‧‧非臨界圖案 32‧‧‧ non-critical pattern
32'‧‧‧非臨界圖案 32'‧‧‧ non-critical pattern
32"‧‧‧非臨界圖案 32"‧‧‧ non-critical pattern
34‧‧‧第三圖案 34‧‧‧ third pattern
36‧‧‧第四圖案 36‧‧‧ fourth pattern
42‧‧‧第一分割標記 42‧‧‧First segmentation mark
44‧‧‧第二分割標記 44‧‧‧Second segmentation mark
46‧‧‧第三分割標記 46‧‧‧ third segmentation mark
52‧‧‧第一光罩 52‧‧‧First mask
54‧‧‧第二光罩 54‧‧‧second mask
S01~S09‧‧‧步驟 S01~S09‧‧‧Steps
W1、W2、W3‧‧‧寬度 W1, W2, W3‧‧‧ width
L1、L2、L3‧‧‧長度 L1, L2, L3‧‧‧ length
第1圖繪示本發明分割光罩圖案的步驟流程圖。第2~6圖繪示各步驟中佈局圖案上視示意圖。 FIG. 1 is a flow chart showing the steps of dividing a reticle pattern according to the present invention. Figures 2-6 show a top view of the layout pattern in each step.
為使熟習本發明所屬技術領域之一般技藝者能更進一步了解本發明,下文特列舉本發明之較佳實施例,並配合所附圖式,詳細說明本發明的構成內容及所欲達成之功效。 The present invention will be further understood by those of ordinary skill in the art to which the present invention pertains. .
為了方便說明,本發明之各圖式僅為示意以更容易了解本發明,其詳細的比例可依照設計的需求進行調整。在文中所描述對於圖形中相對元件之上下關係,在本領域之人皆應能理解其係指物件之相對位置而言,因此皆可以翻轉而呈現相同之構件,此皆應同屬本說明書所揭露之範圍,在此容先敘明。 For the convenience of description, the drawings of the present invention are only for the purpose of understanding the present invention, and the detailed proportions thereof can be adjusted according to the design requirements. As described in the text for the relative relationship between the relative elements in the figure, it should be understood by those skilled in the art that it refers to the relative position of the object, and therefore can be flipped to present the same member, which should belong to the same specification. The scope of the disclosure is hereby stated.
請參考第1圖,第1圖繪示本發明分割光罩圖案的步驟流程圖,並請同時參考第2圖~第6圖,第2~6圖繪示各步驟中佈局圖案上視示意圖。本發明的分割光罩步驟如下。首先,輸入一佈局圖案10至一電腦系統等計算機的一儲存媒介中(步驟S01),然後利用電腦系統來對整個佈局圖案10進行一篩選步驟,以於佈局圖案10中定義至少一臨界間距區20與至少一非臨界間距區30(步驟S03),其中定義臨界間距區20與非臨界間距區30的區別為:佈局圖案10內包含有複數個子圖案(sub-pattern),當一子圖案與相臨的子圖案彼此間的間距小於一最小曝光間距時,則此兩子圖案皆定義為臨界圖案22,且由臨界圖案22組成的群組為臨界間距區20;反之,當一子圖案與其相鄰的子圖案之間距都大於最小曝光間距時,該子圖案就定義為非臨界圖案32,而由非臨界圖案32組成的群組為非臨界間距區30。因此,各臨界間距區20內包含有複數個臨界圖案22,而非臨界間距區30內則包含有複數個非臨界圖案32。其中每一個臨界圖案22與相鄰的臨界圖案22彼此之間的距離小於一最小曝光間距,而每一個非臨界圖案32與相臨的非臨界圖案32彼 此之間的距離大於該最小曝光間距。其中,上述的最小曝光間距為正常狀況下,包含此佈局圖案10的光罩於後續所應用之曝光製程中,相鄰兩圖案在曝光顯影後仍可明顯區分、鑑別,所允許的最小間距,舉例來說,現今20奈米的製程,其最小曝光間距大約為118奈米,當兩圖案之間的間距小於118奈米時,兩圖案經過曝光與顯影步驟後,兩圖案可能相連在一起。因此在正常的一次曝光顯影製程狀況下,由於臨界圖案22過於密集,導致曝光效能不佳,甚至可能造成曝光後的圖案無法區分。為此,本發明在定義臨界間距區20後,接續會進行一第一分割步驟(步驟S05),將臨界間距區20內的臨界圖案22拆分為兩組,如第3圖所示,分別定義為複數個第一圖案24以及複數個第二圖案26,且所有的第一圖案24(以斜線標示者)會預設被分割至一光罩,而所有的第二圖案26會預設被分割至另一光罩。其中,各第一圖案24彼此之間的間距大於該最小曝光間距,而各個第二圖案26彼此之間的間距也大於該最小曝光間距。因此拆分後的第一圖案24與第二圖案26,不再會有與相臨圖案間距過小,而導致曝光失敗的問題。 Please refer to FIG. 1 . FIG. 1 is a flow chart showing the steps of dividing the reticle pattern according to the present invention. Referring to FIG. 2 to FIG. 6 simultaneously, FIG. 2 to FIG. 6 are schematic diagrams showing the layout pattern in each step. The step of splitting the mask of the present invention is as follows. First, a layout pattern 10 is input into a storage medium of a computer such as a computer system (step S01), and then a screening step is performed on the entire layout pattern 10 by using a computer system to define at least one critical spacing area in the layout pattern 10. 20 and at least one non-critical spacing region 30 (step S03), wherein the difference between the critical spacing region 20 and the non-critical spacing region 30 is defined as: the layout pattern 10 includes a plurality of sub-patterns, when a sub-pattern and When the spacing between adjacent sub-patterns is less than a minimum exposure interval, then the two sub-patterns are all defined as the critical pattern 22, and the group consisting of the critical patterns 22 is the critical spacing region 20; conversely, when a sub-pattern is When the distance between adjacent sub-patterns is greater than the minimum exposure pitch, the sub-pattern is defined as a non-critical pattern 32, and the group consisting of the non-critical patterns 32 is a non-critical pitch region 30. Therefore, each of the critical pitch regions 20 includes a plurality of critical patterns 22, and the non-critical pitch regions 30 include a plurality of non-critical patterns 32. The distance between each of the critical patterns 22 and the adjacent critical patterns 22 is less than a minimum exposure interval, and each of the non-critical patterns 32 and the adjacent non-critical pattern 32 The distance between this is greater than the minimum exposure pitch. Wherein, the minimum exposure interval is normal, and the reticle including the layout pattern 10 is in the subsequent exposure process, and the adjacent two patterns can be clearly distinguished and identified after exposure and development, and the minimum spacing allowed, For example, in the current 20 nm process, the minimum exposure pitch is about 118 nm. When the spacing between the two patterns is less than 118 nm, the two patterns may be joined together after the exposure and development steps of the two patterns. Therefore, under the normal one-shot development process, the critical pattern 22 is too dense, resulting in poor exposure performance, and may even cause the pattern after exposure to be indistinguishable. Therefore, after defining the critical pitch region 20, the present invention performs a first dividing step (step S05), and splits the critical pattern 22 in the critical spacing region 20 into two groups, as shown in FIG. 3, respectively. Defined as a plurality of first patterns 24 and a plurality of second patterns 26, and all of the first patterns 24 (indicated by diagonal lines) are preset to be divided into a mask, and all of the second patterns 26 are preset to be Split to another mask. Wherein, the distance between each of the first patterns 24 is greater than the minimum exposure interval, and the spacing between the respective second patterns 26 is also greater than the minimum exposure interval. Therefore, the split first pattern 24 and the second pattern 26 no longer have a problem that the interval between adjacent patterns is too small, resulting in failure of exposure.
其中,第3圖所示的分割方法僅為本發明的其中一種可能的實施例,上述第一分割步驟的分割方式並不限於第3圖所示,也可依照實際需求而改變,僅需滿足分割後的第一圖案24彼此之間的間距大於該最小曝光間距,各個第二圖案26彼此之間的間距也大於該最小曝光間距,即屬於本發明所涵蓋的範圍內。 The segmentation method shown in FIG. 3 is only one possible embodiment of the present invention, and the segmentation manner of the first segmentation step is not limited to that shown in FIG. 3, and may be changed according to actual needs, and only needs to be satisfied. The distance between the divided first patterns 24 is greater than the minimum exposure pitch, and the spacing between the respective second patterns 26 is also greater than the minimum exposure pitch, which is within the scope of the present invention.
除了第一分割步驟之外,本發明分割光罩圖案的方法更包含有針對各該非臨界間距區30進行一第二分割步驟(步驟S07),其中分割的方法如下所述:請參考第4圖,首先,選定非臨界間距區30內的任一非臨界圖案(例如第4圖中的32'),接著沿該選定之非臨界圖案設置複數個分割標記(separate mark)。例如,由該非臨界圖案32,的一邊界向外延伸,當此分割標記碰觸到相鄰的非臨界圖案(例如第4圖中的32")時,則將原先的非臨界圖案32'定義為一第三圖案34,被分割標記碰觸到的非臨界圖案32"定義為一第四圖案36。 接著,選定被碰觸到的非臨界圖案32"再重複一次上述步驟,而將與分割標記碰觸到,且尚未被定義為第三圖案34或是第四圖案36的非臨界圖案,定義為與自己本身相異的圖案。舉例來說,一非臨界圖案已經被定義為第三區塊,則與之相鄰,被分割標記碰觸到的其他非臨界圖案則皆定義為第四區塊,或是反之,一非臨界圖案已經被定義為第四區塊,則與之相鄰,被分割標記碰觸到的其他非臨界圖案則皆定義為第三區塊。重複上述步驟,直到位於非臨界間距區30內所有非臨界圖案32都被定義為止,因此,上述每個分割標記都會位於兩個非臨界圖案之間。至於有部分非臨界圖案,從其邊界向外延伸的分割標記並未接觸到其他任何相鄰的非臨界圖案(例如第4圖中左上角的非臨界圖案),則該非臨界圖案則可任意定義為第三區塊或是第四區塊,可理解的是,第4圖中所繪示的第三圖案與第四圖案的分割情況僅為本發明其中一種可能性而已,本發明並不限於此。而且向外延伸的方向較佳係平行非臨界圖案32'的任一邊界,例如可為水平或是垂直方向。 In addition to the first dividing step, the method for dividing the mask pattern of the present invention further includes performing a second dividing step (step S07) for each of the non-critical spacing regions 30, wherein the method of dividing is as follows: Please refer to FIG. First, any non-critical pattern within the non-critical spacing region 30 (e.g., 32' in FIG. 4) is selected, and then a plurality of separate marks are placed along the selected non-critical pattern. For example, extending from a boundary of the non-critical pattern 32, when the segmentation mark touches an adjacent non-critical pattern (for example, 32" in FIG. 4), the original non-critical pattern 32' is defined. For a third pattern 34, the non-critical pattern 32" touched by the segment marks is defined as a fourth pattern 36. Then, the non-critical pattern 32" that is touched is selected to repeat the above step, and the non-critical pattern that is touched with the division mark and has not been defined as the third pattern 34 or the fourth pattern 36 is defined as A pattern that is different from itself. For example, if a non-critical pattern has been defined as a third block, adjacent to it, other non-critical patterns touched by the split mark are defined as the fourth block. Or, conversely, if a non-critical pattern has been defined as a fourth block, adjacent to it, other non-critical patterns touched by the divided marks are defined as the third block. Repeat the above steps until it is located. All non-critical patterns 32 in the non-critical spacing region 30 are defined, so each of the above-mentioned segmentation marks will be located between the two non-critical patterns. As for the partial non-critical pattern, the segmentation marks extending outward from the boundary thereof are Without touching any other adjacent non-critical patterns (such as the non-critical pattern in the upper left corner of FIG. 4), the non-critical pattern can be arbitrarily defined as the third block or the fourth block. It is understandable that Figure 4 The division of the third pattern and the fourth pattern is only one of the possibilities of the present invention, and the present invention is not limited thereto, and the outwardly extending direction is preferably any boundary of the parallel non-critical pattern 32'. For example, it can be horizontal or vertical.
本發明的分割標記包含有多種不同的幾何形狀,例如第4圖中即繪示有本實施中三種不同的分割標記,分別標示為第一分割標記42、第二分割標記44以及第三分割標記46。其中第一分割標記42呈現矩形,且其寬度(W1)等於非臨界圖案的其中一邊長,當一非臨界圖案與其相鄰的非臨界圖案呈現水平或是垂直方向的平行排列時,第一分割標記42設置於非臨界圖案的邊界,即有可能接觸相鄰的非臨界圖案。而當非臨界圖案與其相鄰的非臨界圖案呈現水平或是垂直錯位時,則可能選擇第二分割標記44或是第三分割標記46設置於非臨界圖案的邊界,本實施例中,第二分割標記44是由非臨界圖案的邊界向水平方向延伸,且其寬度(W2)大於該非臨界圖案的邊界,而第三分割標記46是由非臨界圖案的邊界向垂直方向延伸,且其寬度(W3)大於該非臨界圖案的邊界,因此可接觸位於斜向的相鄰非臨界圖案。除此之外,改變各個分割標記的長度可以調整非臨界圖案32的分割情形,舉例來說,本實施例中,第一分割標記42、第二分割標記44以及第三分割標記46的長度(L1、 L2、L3)較佳小於一預定值,例如為2微米(μm),如此一來,可確保分割後的各個第三圖案34彼此之間的間距大於2μm,分割後的第四圖案36彼此之間的間距也大於2μm。當然,本發明的分割標記並不限於上述,而可依照實際需求而改變寬度、長度與形狀,除了矩形外,更可自由選擇圓形、橢圓形、或是任何不規則的形狀作為分割標記。 The segmentation mark of the present invention comprises a plurality of different geometric shapes. For example, in FIG. 4, three different segmentation marks in the present embodiment are illustrated, which are respectively labeled as a first segmentation mark 42, a second segmentation mark 44, and a third segmentation mark. 46. The first segment mark 42 has a rectangular shape, and its width (W1) is equal to one side of the non-critical pattern. When a non-critical pattern and its adjacent non-critical pattern are arranged in parallel in a horizontal or vertical direction, the first segmentation is performed. The mark 42 is placed at the boundary of the non-critical pattern, that is, it is possible to contact adjacent non-critical patterns. When the non-critical pattern and the adjacent non-critical pattern are horizontally or vertically misaligned, it is possible to select the second dividing mark 44 or the third dividing mark 46 to be disposed at the boundary of the non-critical pattern. In this embodiment, the second The division mark 44 is extended from the boundary of the non-critical pattern in the horizontal direction, and its width (W2) is larger than the boundary of the non-critical pattern, and the third division mark 46 is extended from the boundary of the non-critical pattern to the vertical direction, and its width ( W3) is larger than the boundary of the non-critical pattern, and thus can contact adjacent non-critical patterns located in an oblique direction. In addition, changing the length of each of the divided marks can adjust the division of the non-critical pattern 32. For example, in the present embodiment, the lengths of the first divided mark 42, the second divided mark 44, and the third divided mark 46 ( L1 L2, L3) is preferably less than a predetermined value, for example, 2 micrometers (μm), so that the spacing between the divided third patterns 34 is greater than 2 μm, and the divided fourth patterns 36 are mutually The spacing between them is also greater than 2 μm. Of course, the division mark of the present invention is not limited to the above, and the width, the length and the shape can be changed according to actual needs. In addition to the rectangle, a circle, an ellipse, or any irregular shape can be freely selected as the division mark.
值得注意的是,上述實施例中,先進行第一分割步驟S05後,才進行第二分割步驟S07,亦即先分割各臨界間距區20中的臨界圖案22,再分割各非臨界間距區30中的非臨界圖案32。然而本發明並不限於此,也可在定義臨界間距區20與非臨界間距區30後,先進行第二分割步驟S07,再進行第一分割步驟S05,亦即先分割各非臨界間距區30中的非臨界圖案32,再分割各臨界間距區20中的臨界圖案22,也屬於本發明所涵蓋的範圍內。隨後,可選擇性對第一圖案24、第二圖案26、第三圖案34與第四圖案36進行合適的光學鄰近修正(optical proximity correction,OPC)。 It should be noted that, in the foregoing embodiment, after the first dividing step S05 is performed, the second dividing step S07 is performed, that is, the critical pattern 22 in each critical spacing region 20 is first divided, and then each non-critical spacing region 30 is divided. The non-critical pattern 32 in the middle. However, the present invention is not limited thereto, and after the critical pitch region 20 and the non-critical pitch region 30 are defined, the second dividing step S07 is performed first, and then the first dividing step S05 is performed, that is, the non-critical spacing regions 30 are first divided. The non-critical pattern 32 in the sub-dividing of the critical pattern 22 in each critical spacing region 20 is also within the scope of the present invention. Subsequently, appropriate optical proximity correction (OPC) may be selectively performed on the first pattern 24, the second pattern 26, the third pattern 34, and the fourth pattern 36.
最後,將電腦系統中佈局圖案10所有的第一圖案與第三圖案輸出到一第一光罩上,並將所有的第二圖案與第四圖案輸出到一第二光罩上(步驟S09),如第5~6圖所示,第一光罩52包含有第一圖案24與第三圖案34,第二光罩54包含有第二圖案26與第四圖案36。此外,也可以將電腦系統中佈局圖案10所有的第一圖案與第四圖案輸出到第一光罩上,並將所有的第二圖案與第三圖案輸出到第二光罩上,只要第一圖案與第二圖案(或第三圖案與第四圖案)不同時存在在單一光罩上即可。接著利用第一光罩52與第二光罩54依序進行兩次曝光顯影製程,兩光罩上圖案的組合,即為佈局圖案10的完整圖形。 Finally, all the first patterns and the third patterns of the layout pattern 10 in the computer system are output to a first mask, and all the second patterns and the fourth patterns are output to a second mask (step S09). As shown in FIGS. 5-6, the first mask 52 includes a first pattern 24 and a third pattern 34, and the second mask 54 includes a second pattern 26 and a fourth pattern 36. In addition, all the first patterns and the fourth patterns of the layout pattern 10 in the computer system may be output to the first mask, and all the second patterns and the third pattern are output to the second mask, as long as the first The pattern may be present on a single reticle when it is different from the second pattern (or the third pattern and the fourth pattern). Then, the first photomask 52 and the second photomask 54 are sequentially used for the two exposure and development processes, and the combination of the patterns on the two masks is the complete pattern of the layout pattern 10.
本發明的特徵在於,第一分割步驟S05,可以將原先曝光間距過小的圖案,拆分成兩組不同圖案,因此可以有效增加圖案之間的間距,避免曝光間距過小失敗的問題,除此之外,由於本發明更具有第二分割步驟S07,因此即使位於非臨界間距區30內的圖案也會被平均拆分為兩組圖案,如此一 來,後續將圖案輸出到光罩時,可以使兩光罩上的圖案分配較平均,不易因圖案分配不均,導致兩次曝光過程中,通過兩塊光罩的光強差異太大而導致問題。 The invention is characterized in that, in the first dividing step S05, the pattern with the original exposure pitch too small can be split into two different patterns, so that the spacing between the patterns can be effectively increased, and the problem that the exposure interval is too small is avoided, and the problem is eliminated. In addition, since the present invention further has the second dividing step S07, even the pattern located in the non-critical spacing region 30 is equally divided into two groups of patterns, such that When the pattern is output to the mask, the pattern distribution on the two masks can be evenly distributed, and it is not easy to be unevenly distributed due to the pattern, so that the difference in light intensity between the two masks is too large during the double exposure process. problem.
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.
S01~S09‧‧‧步驟 S01~S09‧‧‧Steps
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