CN106601579B - Top electrode mechanism and semiconductor processing equipment - Google Patents

Top electrode mechanism and semiconductor processing equipment Download PDF

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Publication number
CN106601579B
CN106601579B CN201510679475.2A CN201510679475A CN106601579B CN 106601579 B CN106601579 B CN 106601579B CN 201510679475 A CN201510679475 A CN 201510679475A CN 106601579 B CN106601579 B CN 106601579B
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CN
China
Prior art keywords
coil
plate
top
adaptation
electrode mechanism
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CN201510679475.2A
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Chinese (zh)
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CN106601579A (en
Inventor
张虎威
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北京北方华创微电子装备有限公司
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Priority to CN201510679475.2A priority Critical patent/CN106601579B/en
Publication of CN106601579A publication Critical patent/CN106601579A/en
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Publication of CN106601579B publication Critical patent/CN106601579B/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32568Relative arrangement or disposition of electrodes; moving means

Abstract

The present invention provides a kind of top electrode mechanism and semiconductor processing equipment comprising coil, adaptation and coil shield assembly at the top of reaction chamber is arranged in, wherein coil is electrically connected by coil connector with adaptation.Coil shield assembly is used to be isolated with the horizontal disturbance electric field that the junction of coil connector generates with the vertical electric field generated by coil in adaptation.Top electrode mechanism provided by the invention can interfere the vertical electric field generated by coil to avoid the horizontal disturbance electric field generated in the junction of adaptation and coil connector, thereby may be ensured that the distributing homogeneity of plasma.

Description

Top electrode mechanism and semiconductor processing equipment

Technical field

The present invention relates to microelectronics technologies, and in particular, to a kind of top electrode mechanism and semiconductor processing equipment.

Background technique

In MEMS etching apparatus, radio-frequency coil is usually provided at the top of reaction chamber, the radio-frequency coil by Orchestration is connect with radio-frequency power supply, forms plasma to the indoor process gas of provocative reaction chamber.

Fig. 1 is a kind of existing cross-sectional view of etching apparatus.As shown in Figure 1, etching apparatus includes reaction chamber 11, coil 12, adaptation 13 and radio-frequency power supply (not shown).Wherein, lower electrode 16 is provided in reaction chamber 11, for carrying Chip;Coil 12 uses helicoidal structure, is fixed on the top of reaction chamber 11 using coil brace 15, and coil 12 Input terminal and output end are electrically connected by coil connection strap 14 with adaptation 13, and adaptation 13 is electrically connected with radio-frequency power supply.When penetrating After frequency power is powered, radio-frequency power supply loads alternating voltage, the alternation magnetic generated by coil 12 to coil 12 by adaptation 13 Process gas in field excitation reaction chamber 11 generates plasma and performs etching.

Above-mentioned etching apparatus is inevitably present following problems in practical applications:

By the proof of theory analysis and many experiments, adaptation 13 can generate parallel with the junction of coil connection strap 14 In the horizontal disturbance electric field of 12 place plane of coil, which will have a direct impact on the vertical electricity generated by coil 12 , the distributing homogeneity of plasma is destroyed, so as to cause etching homogeneity reduction, influences process results, interference region such as Fig. 1 Shown in the region I.

Summary of the invention

The present invention is directed at least solve one of the technical problems existing in the prior art, propose a kind of top electrode mechanism and Semiconductor processing equipment, can be to avoid the horizontal disturbance electric field generated in the junction of adaptation and coil connector to by line The vertical electric field that circle generates is interfered, and thereby may be ensured that the distributing homogeneity of plasma.

A kind of top electrode mechanism is provided to achieve the purpose of the present invention, including be arranged in coil at the top of reaction chamber and Adaptation, the coil are electrically connected by coil connector with the adaptation, further include coil shield assembly, and being used for will be in institute State the junction horizontal disturbance electric field generated of adaptation and the coil connector and the vertical electric field generated by the coil Isolation.

Preferably, the coil shield assembly includes closed shielding box, and the shielding box is made of metal material;Institute The output end for stating adaptation extends to the inside of the shielding box;One end of the coil connector is connect with the coil, institute The other end for stating coil connector is connect with the output end of the adaptation.

Preferably, the shielding box is the polyhedron being made of at least four side plates, top plate and bottom plate, each side plate with And each side plate respectively with First Line ring recess is provided on the interface of top plate and bottom plate, and be arranged in the First Line ring recess There is the first shielded coil, to realize each side plate and each side plate electromagnetic shielding between top plate and bottom plate respectively.

Preferably, the shielding box is the cylinder being made of annular slab, top plate and bottom plate, the annular slab respectively with institute It states and is provided with First Line ring recess on the interface of top plate and bottom plate, and be provided with the first shielding line in the First Line ring recess Circle, to realize electromagnetic shielding of the annular slab respectively between the top plate and bottom plate.

Preferably, first through hole is provided on the top plate, the output end of the adaptation passes through the first through hole Protrude into the inside of the shielding box;Also, on the top plate, and it is looped around around the first through hole and is provided with the second line Ring recess, and be provided with secondary shielding coil in the second coil slot, to realize the adaptation and the top plate it Between electromagnetic shielding.

Preferably, the coil connector includes coil adapter, insulating fixing piece and adaptation connector, wherein institute The one end for stating coil adapter is connect with the coil, and the other end of the coil adapter passes through the bottom plate, and passes through institute Adaptation connector is stated to connect with the output end of the adaptation;The insulating fixing piece is for fixing the coil adapter It is electrically insulated on the bottom plate, and by the coil adapter with the bottom plate.

Preferably, the metal material includes aluminium sheet, and the surface of the aluminium sheet is formed with oxide layer by electric conductive oxidation.

Preferably, the top electrode mechanism further include coil box at the top of the reaction chamber and closed is set, and Support plate is provided in the coil box, the inside division of the coil box is formed upper space and lower part by the support plate Space;The coil shield assembly is arranged in the support plate, and is located in the upper space;The adaptation setting exists The top of the coil shield assembly, and be located in the upper space;The coil is arranged in the lower space.

Preferably, the top electrode mechanism further includes coil brace, for the coil to be fixed on the reaction chamber Top;The coil brace includes horizontally disposed fixed plate and the annular support member for being used to support the fixed plate, described Enclosure space is formed on the top of fixed plate, annular support member and the reaction chamber, and the coil is located in the enclosure space, And it is fixed on the lower surface of the fixed plate.

As another technical solution, the present invention also provides a kind of semiconductor processing equipments, including reaction chamber, top electrode The top of the reaction chamber is arranged in mechanism and bottom electrode mechanism, the top electrode mechanism;The bottom electrode mechanism setting exists The inside of the reaction chamber, the top electrode mechanism use above-mentioned top electrode mechanism provided by the invention.

The invention has the following advantages:

Top electrode mechanism provided by the invention can will be connected by setting coil shield assembly in adaptation and coil The horizontal disturbance electric field that the junction of fitting generates is isolated with the vertical electric field generated by coil, so as to avoid the horizon bar It disturbs electric field to interfere the vertical electric field generated by coil, and then can guarantee the distributing homogeneity of plasma.

Semiconductor processing equipment provided by the invention can be with by using above-mentioned top electrode mechanism provided by the invention It avoids the horizontal disturbance electric field from interfering the vertical electric field generated by coil, thereby may be ensured that the distribution of plasma is equal Even property.

Detailed description of the invention

Fig. 1 is a kind of existing cross-sectional view of etching apparatus;

Fig. 2 is the installation diagram of top electrode mechanism provided in an embodiment of the present invention;

Fig. 3 A is the cross-sectional view of top electrode mechanism provided in an embodiment of the present invention;

Fig. 3 B is the enlarged drawing in the region II in Fig. 3 A;And

Fig. 3 C is the enlarged drawing in the region III in Fig. 3 A.

Specific embodiment

To make those skilled in the art more fully understand technical solution of the present invention, come with reference to the accompanying drawing to the present invention The top electrode mechanism and semiconductor processing equipment of offer are described in detail.

Fig. 2 is the installation diagram of top electrode mechanism provided in an embodiment of the present invention.Referring to Fig. 2, being set in reaction chamber 32 It is equipped with lower electrode 33, and the top of reaction chamber 32 is provided with flat medium window 30 and (uses the exhausted of ceramics or quartz etc. The production of edge material), and the top of medium window 30 is arranged in top electrode mechanism, for penetrating medium window 30 for radio-frequency power feed-in The inside of reaction chamber 32.

In the present embodiment, top electrode mechanism includes coil 29, adaptation 21 and coil shield assembly.Wherein, coil 29 It is fixed on 30 top of medium window by coil brace 28, which includes horizontally disposed fixed plate and be used to support this The annular support member 31 of fixed plate, fixed plate, annular support member 31 and medium window 30 form enclosure space, and coil 29 is located at the envelope It closes in space, and is fixed on the lower surface of fixed plate.It certainly, in practical applications, can also be solid using any other mode Alignment circle, and the structure of coil is different, the mode of fixed coil is also different.

Moreover, coil 29 is electrically connected by coil connector with adaptation 21, the adaptation 21 and radio-frequency power supply are (in figure not Show) electrical connection, radio-frequency power supply is used to load RF energy to coil 29 by the adaptation 21, so that coil 29 can excite Reaction gas in reaction chamber 32 forms plasma.Coil shield assembly is used for will be in adaptation 21 and coil connector The horizontal disturbance electric field that junction generates is isolated with the vertical electric field generated by coil 29, so as to avoid the horizontal disturbance electric The vertical electric field generated by coil is interfered in field, and then can guarantee the distributing homogeneity of plasma.

Fig. 3 A is the cross-sectional view of top electrode mechanism provided in an embodiment of the present invention.Fig. 3 B is the amplification in the region II in Fig. 3 A Figure.Fig. 3 C is the enlarged drawing in the region III in Fig. 3 A.Also referring to Fig. 3 A-3C, in the present embodiment, coil shield assembly packet Closed shielding box 23 is included, which is made of metal material, to realize the effect of radio shielding.Preferably, above-mentioned Metal material includes aluminium sheet, and electric conductive oxidation is passed through on the surface of the aluminium sheet, and is formed with and can fill with its exterior space in surface of aluminum plate Separate exhausted oxide layer, so that shielding box 23 effectively seals, so as to avoid radio frequency from revealing, influences to etch result.

The shielding box 23 is the hexahedron being made of four side plates 232, top plate 231 and bottom plate 233, in each side plate 232 And each side plate 232 respectively with First Line ring recess is provided on the interface of top plate 231 and bottom plate 233, and in the First Line The first shielded coil 34 is provided in ring recess, to realize each side plate 232 and each side plate 232 respectively with top plate 231 and Electromagnetic shielding between bottom plate 233, as shown in Figure 3B.

Top electrode mechanism further includes that the top of reaction chamber 23 and closed coil box 26 is arranged in, and in the coil box Support plate 27 is provided in 26, which forms upper space and lower space for the inside division of coil box 26.Upper In portion space, above-mentioned shielding box 23 is arranged in support plate 27;The top of shielding box 23 is arranged in adaptation 21.Coil 26 is arranged In lower space.

In the present embodiment, as shown in Figure 3 C, first through hole, the output end 211 of adaptation 21 are provided on top plate 231 The inside of shielding box 23 is protruded by the first through hole;Also, on top plate 231, and it is looped around around first through hole and is arranged There is the second coil slot, and be provided with secondary shielding coil 35 in the second coil slot, to realize adaptation 21 and top plate Electromagnetic shielding between 231.

Moreover, the output end of adaptation 21 extends to the inside of shielding box 23.One end of coil connector and coil 29 connect It connects, the other end of coil connector is connect with the output end of adaptation 21, since the output end of adaptation 21 is located at shielding box 23 Inside, thus the junction of the output end of the other end of coil connector and adaptation 21 is located at the inside of shielding box 23, from And may be implemented by the horizontal disturbance electric field generated in the junction of adaptation 21 and coil connector with generated by coil 29 Vertical electric field isolation.

In the present embodiment, above-mentioned coil connector includes that coil adapter 25, insulating fixing piece 24 are connected with adaptation Part 22.Wherein, as shown in Figure 3A, coil adapter 25 is made of first adapter 251 and the second adapter 252, the second switching The lower end of part 252 is connect with coil 29, and the upper end of the second adapter 252 is connect with the lower end of first adapter 251, the first switching The upper end of part 251 passes through bottom plate 233, and is connect by adaptation connector 22 with the output end 211 of adaptation 21;Insulation is fixed Part 24 is used to the second adapter 252 being fixed on bottom plate 233, and the second adapter 252 is electrically insulated with bottom plate 233, thus Realize the radio frequency isolation of the two.In practical applications, insulating fixing piece 24 can use arbitrary structures, as long as can be realized second The radio frequency isolation of adapter 252 and bottom plate 233.

It should be noted that in the present embodiment, coil adapter 25 is by first adapter 251 and the second adapter 252 Composition, but the present invention is not limited thereto, in practical applications, coil adapter 25 can also use any other structure, As long as bottom plate can be passed through, and the output end of coil and adaptation is linked together.In addition, in practical applications, The output end 211 of orchestration 21 is two, and coil 29 is usually docked by completely identical in structure two fissions, each fission Tool there are two connecting pin, two fissions have altogether there are four connecting pin, in this case it is necessary to which four coil adapters 25 are arranged With two adaptation connectors 22, wherein one end of four coil adapters 25 is connect with four connecting pins correspondingly;Two A adaptation connector 22 is connect with two output ends 211 of adaptation 21 respectively.Also, in four coil adapters 25, The other end of two of them coil adapter 25 passes through adaptation connector 22 while one of output end with adaptation 21 The other end of 211 connections, other two coil adapter 25 is wherein another with adaptation 21 simultaneously by adaptation connector 22 One output end 211 connects.In addition, in practical applications, adaptation connector 22 can use arbitrary structures, as long as can be real Now being electrically connected coil adapter 25 and the output end of adaptation 21.

It should also be noted that, in the present embodiment, shielding box 23 is by four side plates 232, top plate 231 and bottom plate 233 The hexahedron of composition, but the present invention is not limited thereto, in practical applications, shielding box can also be pentahedron or seven faces Body etc., that is, shielding box can be the polyhedron being made of five or six or more side plates and top plate and bottom plate.

Explanation is needed further exist for, in practical applications, shielding box can also be cylinder, which can be by annular Plate, top plate and bottom plate composition.It is similar with the shielding box of above-mentioned polyhedral structure, in order to realize the electromagnetic screen between each plate Cover, annular slab respectively with First Line ring recess is provided on the interface of top plate and bottom plate, and be provided in First Line ring recess First shielded coil, to realize electromagnetic shielding of the annular slab respectively between top plate and bottom plate.Certainly, in practical applications, Shielding box can also use any other structure, as long as its effect that can be realized radio shielding.

It, can will be by setting coil shield assembly in conclusion top electrode mechanism provided in an embodiment of the present invention Adaptation is isolated with the horizontal disturbance electric field that the junction of coil connector generates with the vertical electric field generated by coil, so as to The vertical electric field generated by coil is interfered to avoid the horizontal disturbance electric field, and then can guarantee the distribution of plasma Uniformity.

As another technical solution, the embodiment of the present invention also provides a kind of semiconductor processing equipment, including reaction chamber, Bottom electrode mechanism and top electrode mechanism.Wherein, the top of reaction chamber is arranged in top electrode mechanism, which uses The top electrode mechanism that the above embodiment of the present invention provides;The inside of reaction chamber is arranged in bottom electrode mechanism.

Semiconductor processing equipment provided in an embodiment of the present invention above-mentioned is powered on by using provided in an embodiment of the present invention Pole mechanism can interfere the vertical electric field generated by coil to avoid the horizontal disturbance electric field, thereby may be ensured that etc. from The distributing homogeneity of daughter.

It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.

Claims (7)

1. a kind of top electrode mechanism, including coil and adaptation at the top of reaction chamber is arranged in, the coil is connected by coil Fitting is electrically connected with the adaptation, which is characterized in that further includes coil shield assembly, the coil shield assembly is at described The junction of orchestration and the coil connector surrounds to form confined space, the horizontal disturbance electric field that the junction is generated It is isolated with the vertical electric field generated by the coil;The coil shield assembly includes closed shielding box, and the shielding box is adopted It is made of metal material;The output end of the adaptation extends to the inside of the shielding box;One end of the coil connector It is connect with the coil, the other end of the coil connector is connect with the output end of the adaptation;The shielding box is served as reasons The polyhedron of at least four side plates, top plate and bottom plate composition, each side plate and each side plate respectively with top plate and bottom plate It is provided with First Line ring recess on interface, and is provided with the first shielded coil in the First Line ring recess, it is each to realize Side plate and each side plate electromagnetic shielding between top plate and bottom plate respectively;Alternatively,
The shielding box is the cylinder being made of annular slab, top plate and bottom plate, the annular slab respectively with the top plate and bottom It is provided with First Line ring recess on the interface of plate, and is provided with the first shielded coil in the First Line ring recess, to realize The annular slab electromagnetic shielding between the top plate and bottom plate respectively.
2. top electrode mechanism according to claim 1, which is characterized in that be provided with first through hole, institute on the top plate The output end for stating adaptation protrudes into the inside of the shielding box by the first through hole;Also, on the top plate, and it surround It is provided with the second coil slot around the first through hole, and is provided with secondary shielding line in the second coil slot Circle, to realize the electromagnetic shielding between the adaptation and the top plate.
3. top electrode mechanism according to claim 1, which is characterized in that the coil connector include coil adapter, Insulating fixing piece and adaptation connector, wherein
One end of the coil adapter is connect with the coil, and the other end of the coil adapter passes through the bottom plate, and It is connect by the adaptation connector with the output end of the adaptation;
The insulating fixing piece is used to the coil adapter being fixed on the bottom plate, and by the coil adapter and institute State bottom plate electrical isolation.
4. top electrode mechanism according to claim 1, which is characterized in that the metal material includes aluminium sheet, and the aluminium The surface of plate is formed with oxide layer by electric conductive oxidation.
5. top electrode mechanism according to any one of claims 1-4, which is characterized in that the top electrode mechanism further includes Coil box at the top of the reaction chamber and closed is set, and is provided with support plate in the coil box, the support The inside division of the coil box is formed upper space and lower space by plate;
The coil shield assembly is arranged in the support plate, and is located in the upper space;
The top of the coil shield assembly is arranged in the adaptation, and is located in the upper space;
The coil is arranged in the lower space.
6. top electrode mechanism according to any one of claims 1-4, which is characterized in that the top electrode mechanism further includes Coil brace, for the coil to be fixed on to the top of the reaction chamber;
The coil brace includes horizontally disposed fixed plate and the annular support member for being used to support the fixed plate, the fixation Enclosure space is formed on the top of plate, annular support member and the reaction chamber, and the coil is located in the enclosure space, and solid It is scheduled on the lower surface of the fixed plate.
7. a kind of semiconductor processing equipment, including reaction chamber, top electrode mechanism and bottom electrode mechanism, the top electrode mechanism are set It sets at the top of the reaction chamber;The inside of the reaction chamber is arranged in the bottom electrode mechanism, which is characterized in that described Top electrode mechanism uses top electrode mechanism as claimed in any one of claims 1 to 6.
CN201510679475.2A 2015-10-19 2015-10-19 Top electrode mechanism and semiconductor processing equipment CN106601579B (en)

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Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
CN201510679475.2A CN106601579B (en) 2015-10-19 2015-10-19 Top electrode mechanism and semiconductor processing equipment

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CN106601579B true CN106601579B (en) 2019-02-19

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101231943A (en) * 2002-11-26 2008-07-30 东京毅力科创株式会社 Plasma processing apparatus and method
CN101730375A (en) * 2008-10-27 2010-06-09 东京毅力科创株式会社 Inductively coupled plasma processing device and plasma processing method
CN102418073A (en) * 2010-09-27 2012-04-18 北京北方微电子基地设备工艺研究中心有限责任公司 Sputtering chamber, pre-cleaning chamber and plasma processing equipment
CN104342632A (en) * 2013-08-07 2015-02-11 北京北方微电子基地设备工艺研究中心有限责任公司 Pre-cleaning cavity and plasma machining device
CN104752134A (en) * 2013-12-29 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 Reaction chamber and plasma processing equipment

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330058A (en) * 1998-05-19 1999-11-30 Tokyo Electron Ltd Plasma processor
TWI279169B (en) * 2002-01-24 2007-04-11 Alps Electric Co Ltd Plasma processing apparatus capable of performing uniform plasma treatment by preventing drift in plasma discharge current
TWI239794B (en) * 2002-01-30 2005-09-11 Alps Electric Co Ltd Plasma processing apparatus and method
US9520276B2 (en) * 2005-06-22 2016-12-13 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
CN202888133U (en) * 2009-09-29 2013-04-17 应用材料公司 Apparatus for coupling RF (Radio Frequency) power to plasma chamber

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101231943A (en) * 2002-11-26 2008-07-30 东京毅力科创株式会社 Plasma processing apparatus and method
CN101730375A (en) * 2008-10-27 2010-06-09 东京毅力科创株式会社 Inductively coupled plasma processing device and plasma processing method
CN102418073A (en) * 2010-09-27 2012-04-18 北京北方微电子基地设备工艺研究中心有限责任公司 Sputtering chamber, pre-cleaning chamber and plasma processing equipment
CN104342632A (en) * 2013-08-07 2015-02-11 北京北方微电子基地设备工艺研究中心有限责任公司 Pre-cleaning cavity and plasma machining device
CN104752134A (en) * 2013-12-29 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 Reaction chamber and plasma processing equipment

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