CN106584975A - Infrared enhanced broadband photothermal conversion film device - Google Patents
Infrared enhanced broadband photothermal conversion film device Download PDFInfo
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- CN106584975A CN106584975A CN201611105403.8A CN201611105403A CN106584975A CN 106584975 A CN106584975 A CN 106584975A CN 201611105403 A CN201611105403 A CN 201611105403A CN 106584975 A CN106584975 A CN 106584975A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/061—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of metal
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S70/00—Details of absorbing elements
- F24S70/10—Details of absorbing elements characterised by the absorbing material
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S70/00—Details of absorbing elements
- F24S70/10—Details of absorbing elements characterised by the absorbing material
- F24S70/12—Details of absorbing elements characterised by the absorbing material made of metallic material
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S70/00—Details of absorbing elements
- F24S70/10—Details of absorbing elements characterised by the absorbing material
- F24S70/16—Details of absorbing elements characterised by the absorbing material made of ceramic; made of concrete; made of natural stone
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/05—5 or more layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/30—Properties of the layers or laminate having particular thermal properties
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2551/00—Optical elements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/40—Solar thermal energy, e.g. solar towers
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- Sustainable Development (AREA)
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Abstract
The invention discloses an infrared enhanced broadband photothermal conversion film device. The first layer is an anti-reflection protective layer and adopts a transparent dielectric film; the second layer is a light absorption layer and adopts a transition metal film; the third layer is an optical amplitude and phase matching layer and adopts a transparent dielectric film; the fourth layer is a light absorption layer and adopts a transition metal film; the fifth layer is an optical amplitude and phase matching layer and adopts a transparent dielectric film; the sixth layer is a light absorption layer and adopts a transition metal film; the seventh layer is an optical amplitude and phase matching layer and adopts a transparent dielectric film; the eighth layer is a highly-reflective layer and adopts a completely non-transparent and highly-reflective metal film; the thickness of the first layer to the eighth layer is selected based on the optical constant of each film layer, and the high absorption conditions are: (R + T) is smaller than or equal to 5%, AX is larger than or equal to 95%, and R plus T plus AX equals 1 in the wavelength range of 250-2,000 nm. Through optimization calculation of structural parameters, the light absorption rate of the photon energy converted into heat energy in the wavelength region of 250-2,000 nm exceeds 95%.
Description
Technical field
The invention belongs to optical electron device arts, are related to a kind of infrared enhanced broadband photothermal deformation thin film device
Part.
Background technology
Plural layers with nanostructured have important application in high-tech area, such as in green solar field, can profit
Heat energy is converted solar energy into the spectral characteristic of selectivity sun light absorption film structure.At present in the research of Solar use
Aspect, is primarily focused on the photovoltaic energy conversion characteristic aspect of device, mainly using amorphous state, polycrystalline state and crystalline substance mostly
The semi-conducting material of state, the photoelectric conversion process of solar energy is realized using its special band structure.However, due to different half
Conductor material has different band structures, and it absorbs and light transfer characteristic is difficult to complete of the spectral regions broad with sunlight
Match somebody with somebody, cause the solar energy more than 70% to be fully utilized.Another factor for affecting semi-conducting material application is that it is held high
Expensive material and process costs.In contrast to this, there is thin-film material structure and technique to prepare relatively simply, by rational material
Material is selected and structure design, may be implemented in the spectral regions of broadness, and the high efficiency for realizing photon energy absorbs, with dirty without environment
Dye, stable performance, process is simple, low cost, operating temperature are high, it is easy to the advantages of promoting, and can obtain in green solar field
Must apply.
The plural layers device for obtaining application in optoelectronic areas at present is made up of non-optical absorbing material mostly, it is desirable to light
Very little is absorbed, or even can be ignored and disregarded.However, when adopting by strong light absorption material, such as metal and none light absorption materials is constituted
During the multi-layer film structure of mixing, can be according to suitable metal and the optical property of dielectric material, by selecting suitable material
With film structure parameter, can realize, in very wide spectral regions, most of photon energy being absorbed by metal film layer, and change
For heat energy.According to normalized conservation of energy principle, R+T+A=1, wherein, R, T, A are respectively the total optical reflections of device, thoroughly
Penetrate and absorbance, and be the function of wavelength and membrane structure parameter.In the present invention, it is desirable to which photothermal deformation device is in 250-
The feature of 2000nm spectral regions is：
(R+T) (≤5%)+Ax(>=95%)=1.
Therefore, by constituting membrane structure using suitable metal and dielectric material, according to suitable optical constant and knot
Structure parameter, can cause light to be converted to heat by high efficiency in such membrane structure, in the effect that very wide spectral regions produce
For R+T≤5%, while realizing total absorption Ax>=95%.With this understanding, when photon is incided in device, there will be over
95% photon is absorbed by device, and absorbed photon energy is converted into heat energy in thin layer.
Existing patent ZL200610027440.1, using 4 layer film structures, operation wavelength area is confined to as 400-1000nm
Wavelength zone, average absorption ratio only 90%, especially ultraviolet (250-400nm wavelength zones) and infrared (1000-2000nm wavelength zones)
Absorbance it is very low, it is difficult to be employed in ultraviolet and ultrared.
The A of existing patent CN 105252844, using 6 layer film structures, operation wavelength is confined to 250-1200nm wavelength
Area, its average absorption ratio up to 95%, but it is very low for the absorbance of infrared (1200-2000 wavelength zones), it is difficult to infrared
Area is employed.
The content of the invention
It is an object of the invention to provide a kind of infrared enhanced broadband photothermal deformation thin-film device, can be in 250-
2000nm wavelength zones, especially in infrared 1200-2000 wavelength zones, by selecting suitable metal material and membrane structure, realize
Photon energy is converted into the absorptivity A of heat energyxMore than 95%, problems of the prior art are solved.
For achieving the above object, the present invention is adopted the following technical scheme that：
A kind of infrared enhanced broadband photothermal deformation thin-film device in the present invention, using one kind by metal and nonmetal film
8 film structures of composition, its ground floor is the protective layer of antireflection, using transparent dielectric film；The second layer is light absorbing zone, is adopted
Transition metal films；Third layer is optical amplitude and non-colinear position layer, using transparent dielectric film；4th layer is light absorbing zone, is adopted
Use transition metal films；Layer 5 is optical amplitude and non-colinear position layer, using transparent dielectric film；Layer 6 is light absorbing zone, is adopted
Use transition metal films；Layer 7 is optical amplitude and non-colinear position layer, using transparent dielectric film；8th layer is high reflection layer, is adopted
With complete nontransparent high reflecting metal film；
The optical constant of each thin layer of selection gist of the first to the 8th thickness, in 250-2000nm wavelength zones, satisfaction
High-selenium corn condition is：
(R+T)≤5%, AX>=95%, R+T+AX=1.
Further, in the devices set out in the foregoing, the transparent dielectric material choosing of the ground floor, third layer, layer 5, layer 7
Use SiO2, glass (such as BK7), CaF2, KCl or MgF2。
Further, in the devices set out in the foregoing, the second layer, the 4th layer, the transition metal films material selection Ti of layer 6,
W、Cr。
Further, in the devices set out in the foregoing, described 8th layer of complete nontransparent high reflecting metal material selection Ag,
Al、Cu、Au。
Further, in the devices set out in the foregoing, the 8th thickness degree 100-150nm, layer 7 thickness 40-60nm, the
Six thickness degree 10-20nm, layer 5 thickness 40-80nm, the 4th thickness degree 5-10nm, third layer thickness 40-80nm, the second thickness
Degree 2-5nm, ground floor thickness 60-80nm.
The invention has the beneficial effects as follows, using 8 layer film structures, significantly enhance the light absorbs of 250-2000nm wavelength zones
Rate, by the optimization computation of structural parameters, its average absorption ratio can be more than 95%, especially in near-infrared 1000-2000nm
The absorbance of wavelength zone is significantly improved, and has higher photo-thermal conversion efficiency, is easy to device to be pushed away in broader spectral regions
Wide application.
Description of the drawings
Below in conjunction with the accompanying drawings and embodiment, to the real material and structural parameters selected by the present invention and obtained
As a result it is described in further detail.
Fig. 1 is by transition metal and transparent in the infrared enhanced broadband photothermal deformation thin-film device of one kind of the present invention
8 layer film structure schematic diagrams of medium mixing.
Fig. 2 is that Fig. 1 structures are based in embodiment, adopts transition metal Ti for absorbing material；SiO2For dielectric material；Cu is
High reflecting metal absorbing material, using SiO2(65.0nm)/Ti(3.4nm)/SiO2(72.6nm)/Ti(6.3nm)/SiO2
(67nm)/Ti(12.9nm)/SiO2(52.4nm)/Cu(>Structural parameters 100.0nm), obtain 250-2000nm spectral regions
Reflectance spectrum R and absorption spectra A calculating and experimental result correction data figure.
Specific embodiment
A kind of infrared enhanced broadband photothermal deformation thin-film device of the present invention is one kind by metal and nonmetal film group
Into 8 film structures, be to generally reflection and transmit the improvement of non-absorbing membrane structure, its structure is：
Ground floor is transparent dielectric film, and its effect is the light reflection loss for reducing transition metal layer surface, and by transition
Metal level and isolated from atmosphere, effective protection transition metal layer.
The second layer is light absorbing zone, strengthens the absorption characteristic of ultrared, using transition metal films.
Third layer is transparent dielectric film, and optical amplitude and phase matched are played a part of in the structure, makes photon energy master
In concentrating on transition metal layer, absorbed by transition metal layer.
4th layer is light absorbing zone, using transition metal films.
Layer 5 is transparent dielectric film, and optical amplitude and phase matched are played a part of in the structure, makes photon energy master
In concentrating on transition metal layer, absorbed by transition metal layer.
Layer 6 is light absorbing zone, using transition metal films.
Layer 7 is transparent dielectric film, and optical amplitude and phase matched are played a part of in the structure, makes photon energy master
In concentrating on transition metal layer, absorbed by transition metal layer.
8th layer is high reflection layer, using complete nontransparent high reflecting metal film.
In above-mentioned device, ground floor, third layer, layer 5, the transparent dielectric material of layer 7 select SiO2, glass (such as
BK7)、CaF2, KCl or MgF2Transparent dielectric material.
The second layer, the 4th layer, layer 6 transition metal films material selection Ti, W, Cr transition metal material.
8th layer adopts Ag, Al, Cu, Au high reflecting metal material.
In the device, the optical constant of each thin layer of selection gist of the first to the 6th thickness, in 250-2000nm wavelength
Area, the high-selenium corn condition of satisfaction is：
(R+T)≤5%, AX>=95%, R+T+AX=1.
The present invention is a kind of infrared enhancing broadband photothermal deformation thin-film device, is prepared according to following steps and structural parameters：
Step 1, under vacuum, using ion sputtering, thermal evaporation, electron beam evaporation and other film growth methods,
Polishing glass substrate on deposit suitable thickness (>The complete nontransparent high reflecting metal film of the 8th layer 100nm), formation
Membrane structure has complete nontransparent high reflection spectral characteristic in 250-2000nm spectral regions.
Step 2, then on the 8th layer of complete nontransparent high reflecting metal film, deposits suitable thickness (40-60nm)
Layer 7 transparent dielectric film, plays a part of optical amplitude and non-colinear position.
Step 3, then on layer 7 transparent dielectric film, deposits the layer 6 transition metal of relatively small thickness (10-20nm)
Film layer, plays a part of very strong photon energy absorption.
Step 4, then in layer 6 transition metal film layer, deposits transparent Jie of layer 5 of suitable thickness (40-80nm)
Plasma membrane layer, plays a part of optical amplitude and non-colinear position.
Step 5, then in layer 5 transparent medium film layer, deposits the 4th layer of transition metal films of relatively small thickness (5-10nm)
Layer, plays a part of very strong photon energy absorption.
Step 6, then in the 4th layer of transition metal film layer, deposits transparent Jie of third layer of suitable thickness (40-80nm)
Plasma membrane layer, plays a part of optical amplitude and non-colinear position.
Step 7, then in third layer transparent medium film layer, deposits the second layer transition metal films of relatively small thickness (2-5nm)
Layer, plays a part of very strong photon energy absorption.
Step 8, finally, the ground floor that suitable thickness (60-80nm) is deposited in the transition metal film layer of the second layer is transparent
Media coating, plays antireflection and the protective effect by transition metal layer and isolated from atmosphere, significantly improves device in atmospheric environment
The reliability of medium-term and long-term work.
The photothermal deformation thin-film device prepared using 8 layers of transition metal and transparent medium of present invention design, can be in 250-
2000nm spectral regions, realize photonic absorbance Ax>=95% performance.This is a kind of stable performance, environmentally safe, technique
Simply, cost is relatively low, draw materials be relatively easy to, operating temperature it is high, be obtained in that the device that practical application is promoted.
Embodiment
As shown in figure 1, in various selectable structural parameters, the attainable optimised devices structural parameters of reality
For：
Ground floor 1, antireflection and protective layer, thickness d=65nm, transparent medium SiO2Layer；
The second layer 2, light absorbing zone, thickness d=3.4nm, transition metal Ti layers；
Third layer 3, optical amplitude and non-colinear position layer, thickness d=72.6nm, transparent medium SiO2Layer；
4th layer 4, light absorbing zone, thickness d=6.3nm, transition metal Ti layers；
Layer 55, optical amplitude and non-colinear position layer, thickness d=67nm, transparent medium SiO2Layer；
Layer 66, light absorbing zone, thickness d=12.9nm, transition metal Ti layers；
Layer 77, optical amplitude and phase matching layer, thickness d=52.4nm, transparent medium SiO2Layer；
8th layer 8, high reflection layer, thickness d>100nm, Ni metal layer.
Reflected and absorbance using photon of the present invention of above-mentioned optimised devices structural parameters in 250-2000nm spectral regions
Characteristic shows that in fig. 2 this is that eight layer film structures being made up of transition metal and transparent medium mixing that the present invention is provided exist
The design of 250-2000nm spectral regions and absorption characteristic are calculated and experimental result, in very wide 250-2000nm spectral regions, especially
It is that, in infrared 1000-2000nm wavelength zones, photon energy has exceeded 95% by the average efficiency that device absorbs, and (actual value reaches
98.3%).
Plural layers preparation technology can be adopted to realize designed device spectral characteristic.In preparation process, using K9 glass
Glass is used as the material of substrate 9, surface optical polishing.Then in vacuum film growth system, using ion sputtering, thermal evaporation, electricity
The method such as sub- art evaporation and other thin film growths, deposits about on the glass of K9 substrates 9 of polishing>100nm is thick, and purity is 99.9%
Cu metal levels.Then on Cu metallic diaphragms, continue to deposit the thick SiO of 52.4nm2Dielectric thin film layer, forms optical interference
Layer.Then in SiO2Continuation deposit 12.9nm is thick on thin layer, and purity is 99.9% Ti metal levels.Then in transition metal films
On Ti layers, continue to deposit the thick SiO of 67nm2Dielectric thin film layer, forms optical interference layer.Then in SiO2Continue to form sediment on thin layer
6.3nm is thick for product, and purity is 99.9% Ti metal levels.Then on transition metal films Ti layer, continue to deposit 72.6nm thickness
SiO2Dielectric thin film layer, forms optical interference layer.Then in SiO2Continuation deposit 3.4nm is thick on thin layer, and purity is 99.9%
Ti metal levels.Then the thick SiO of 65nm are deposited on transition metal films Ti layer2Layer, plays antireflecting effect, and plays mistake
The effect of metal level and isolated from atmosphere is crossed, prevents device from aoxidizing, strengthen the reliability of device long-term work in atmospheric environment.
Those of ordinary skill in the art it should be appreciated that the embodiment of the above be intended merely to explanation the present invention,
And be not used as limitation of the invention, as long as in the spirit of the present invention, the change to embodiment described above
Change, modification all will fall in scope of the presently claimed invention.
Claims (5)
1. a kind of infrared enhanced broadband photothermal deformation thin-film device, it is characterised in that 8 be made up of metal and nonmetal film
Film structure, its structure is：
Ground floor is the protective layer of antireflection, using transparent dielectric film；
The second layer is light absorbing zone, using transition metal films；
Third layer is optical amplitude and non-colinear position layer, using transparent dielectric film；
4th layer is light absorbing zone, using transition metal films；
Layer 5 is optical amplitude and non-colinear position layer, using transparent dielectric film；
Layer 6 is light absorbing zone, using transition metal films；
Layer 7 is optical amplitude and non-colinear position layer, using transparent dielectric film；
8th layer is high reflection layer, using complete nontransparent high reflecting metal film；
Ground floor to each film layer of selection gist of the 8th thickness degree optical constant, in 250-2000nm wavelength zones, the height of satisfaction
Acceptance condition is：
(R+T)≤5%, AX>=95%, R+T+AX=1.
2. the infrared enhanced broadband photothermal deformation thin-film device of one kind according to claim 1, it is characterised in that described
One layer, third layer, layer 5, the material selection SiO of layer 72, glass, CaF2, KCl or MgF2Transparent dielectric material.
3. the infrared enhanced broadband photothermal deformation thin-film device of one kind according to claim 1, it is characterised in that described
Two layers, the 4th layer, layer 6 transition metal films material selection Ti, W, Cr.
4. the infrared enhanced broadband photothermal deformation thin-film device of one kind according to claim 1, it is characterised in that described
Eight layers adopt Ag, Al, Cu, Au.
5. the infrared enhanced broadband photothermal deformation thin-film device of one kind according to claim 1, it is characterised in that described
Eight thickness degree 100-150nm, layer 7 thickness 40-60nm, layer 6 thickness 10-20nm, layer 5 thickness 40-80nm, the 4th
Thickness degree 5-10nm, third layer thickness 40-80nm, second layer thickness 2-5nm, ground floor thickness 60-80nm.
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| CN201611105403.8A CN106584975B (en) | 2016-12-05 | 2016-12-05 | A kind of broadband photothermal conversion thin-film device of infrared enhancing |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023178822A1 (en) * | 2022-03-23 | 2023-09-28 | 苏州大学 | Ultra-wideband optical absorber based on multiple transition metal layers |
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|---|---|---|---|---|
| CN1868734A (en) * | 2006-06-08 | 2006-11-29 | 复旦大学 | Light heat energy conversion device having metal and non-metal multilayer film structure |
| CN102053288A (en) * | 2010-11-16 | 2011-05-11 | 中国科学院长春光学精密机械与物理研究所 | Color changing film for video bionic stealth |
| US7968201B2 (en) * | 2005-08-30 | 2011-06-28 | Pilkington Group Limited | Light transmittance optimizing coated glass article for solar cell and method for making |
| CN105252844A (en) * | 2015-10-15 | 2016-01-20 | 复旦大学 | Broadband film type photo-thermal energy conversion device |
| CN106052171A (en) * | 2016-06-21 | 2016-10-26 | 华中科技大学 | Selective absorption film |
-
2016
- 2016-12-05 CN CN201611105403.8A patent/CN106584975B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7968201B2 (en) * | 2005-08-30 | 2011-06-28 | Pilkington Group Limited | Light transmittance optimizing coated glass article for solar cell and method for making |
| CN1868734A (en) * | 2006-06-08 | 2006-11-29 | 复旦大学 | Light heat energy conversion device having metal and non-metal multilayer film structure |
| CN102053288A (en) * | 2010-11-16 | 2011-05-11 | 中国科学院长春光学精密机械与物理研究所 | Color changing film for video bionic stealth |
| CN105252844A (en) * | 2015-10-15 | 2016-01-20 | 复旦大学 | Broadband film type photo-thermal energy conversion device |
| CN106052171A (en) * | 2016-06-21 | 2016-10-26 | 华中科技大学 | Selective absorption film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023178822A1 (en) * | 2022-03-23 | 2023-09-28 | 苏州大学 | Ultra-wideband optical absorber based on multiple transition metal layers |
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