CN106584975B - A kind of broadband photothermal conversion thin-film device of infrared enhancing - Google Patents
A kind of broadband photothermal conversion thin-film device of infrared enhancing Download PDFInfo
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- CN106584975B CN106584975B CN201611105403.8A CN201611105403A CN106584975B CN 106584975 B CN106584975 B CN 106584975B CN 201611105403 A CN201611105403 A CN 201611105403A CN 106584975 B CN106584975 B CN 106584975B
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Abstract
The invention discloses a kind of broadband photothermal conversion thin-film devices of infrared enhancing, and first layer is the protective layer of antireflection, using transparent dielectric film；The second layer is light absorbing layer, using transition metal films；Third layer is optical amplitude and position phase matching layer, using transparent dielectric film；4th layer is light absorbing layer, using transition metal films；Layer 5 is optical amplitude and position phase matching layer, using transparent dielectric film；Layer 6 is light absorbing layer, using transition metal films；Layer 7 is optical amplitude and position phase matching layer, using transparent dielectric film；8th layer is high reflection layer, using complete nontransparent high reflecting metal film；First layer to the 8th thickness degree each film layer of selection gist optical constant, in the wavelength zone 250-2000nm, the high-selenium corn condition of satisfaction are as follows: (R+T)≤5%, AX>=95%, R+T+AX=1., can be in the wavelength zone 250-2000nm by the optimization computation of structural parameters, realizing that photon energy is converted into the absorptivity Ax of thermal energy is more than 95%.
Description
Technical field
The invention belongs to optical electron device arts, are related to a kind of broadband photothermal conversion film device of infrared enhancing
Part.
Background technique
Plural layers with nanostructure have important application can benefit such as in green solar field in high-tech area
Thermal energy is converted solar energy into the spectral characteristic of selective sun light absorption film structure.At present in the research of Solar use
Aspect is primarily focused on the photovoltaic energy conversion characteristic aspect of device mostly, mainly uses amorphous state, polycrystalline state and crystalline substance
The semiconductor material of state realizes the photoelectric conversion process of solar energy using its special band structure.However, due to different half
Conductor material has different band structures, absorbs and light transfer characteristic is difficult to the spectral regions broad with sunlight complete
Match, causes to be more than that 70% solar energy cannot be fully utilized.Another factor for influencing semiconductor material application is that it is high
Expensive material and process costs.In contrast to this, thin-film material has structure and technique preparation relatively simple, passes through reasonable material
Material selection and structure design realize that the high efficiency of photon energy absorbs, it can be achieved that in wide spectral regions, dirty with no environment
The advantages that dye, performance are stablized, and simple process, low cost, operating temperature are high, easy to spread, and can be obtained in green solar field
It must apply.
It is made of mostly non-optical absorbing material in the plural layers device that optoelectronic areas obtains application at present, it is desirable that light
Very little is absorbed, or even can be ignored and disregard.However, being formed when using by strong light absorption material, such as metal and none light absorption materials
When mixed multi-layer film structure, selection suitable material can be passed through according to the optical property of suitable metal and dielectric material
It with film structure parameter, can be realized in very wide spectral regions, most of photon energy absorbed by metal film layer, and converts
For thermal energy.According to normalized conservation of energy principle, R+T+A=1, wherein R, T, A be respectively the total optical reflection of device, thoroughly
It penetrates and absorptivity, and is the function of wavelength and membrane structure parameter.In the present invention, it is desirable that photothermal conversion device is in 250-
The feature of 2000nm spectral regions are as follows:
(R+T) (≤5%)+Ax(>=95%)=1.
Therefore, membrane structure is formed by using suitable metal and dielectric material, according to suitable optical constant and knot
Structure parameter will may make light to be converted to heat by high efficiency in such membrane structure, in the effect that very wide spectral regions generate
For R+T≤5%, while realizing total absorption Ax>=95%.With this condition, it when photon is incident in device, there will be over
95% photon is absorbed by device, and absorbed photon energy is converted into thermal energy in film layer.
Existing patent ZL200610027440.1, using 4 layer film structures, operation wavelength area is confined to as 400-1000nm
Wavelength zone, average absorption ratio only 90% are especially ultraviolet (wavelength zone 250-400nm) and infrared (wavelength zone 1000-2000nm)
Absorptivity it is very low, it is difficult to applied in ultraviolet and infrared region.
Existing patent CN105252844A, using 6 layer film structures, operation wavelength is confined to the wavelength zone 250-1200nm,
Its average absorption ratio is but very low for the absorptivity of infrared (wavelength zone 1200-2000) up to 95%, it is difficult in infrared region quilt
Using.
Summary of the invention
The object of the present invention is to provide a kind of broadband photothermal conversion thin-film devices of infrared enhancing, can be in 250-
The wavelength zone 2000nm is especially realized in the infrared wavelength zone 1200-2000 by selecting suitable metal material and membrane structure
Photon energy is converted into the absorptivity A of thermal energyxMore than 95%, solve problems of the prior art.
To achieve the above object, the present invention adopts the following technical scheme:
A kind of broadband photothermal conversion thin-film device of infrared enhancing in the present invention, using one kind by metal and nonmetal film
8 film structures of composition, first layer is the protective layer of antireflection, using transparent dielectric film；The second layer is light absorbing layer, is used
Transition metal films；Third layer is optical amplitude and position phase matching layer, using transparent dielectric film；4th layer is light absorbing layer, is adopted
Use transition metal films；Layer 5 is optical amplitude and position phase matching layer, using transparent dielectric film；Layer 6 is light absorbing layer, is adopted
Use transition metal films；Layer 7 is optical amplitude and position phase matching layer, using transparent dielectric film；8th layer is high reflection layer, is adopted
With complete nontransparent high reflecting metal film；
The optical constant of each film layer of selection gist of first to the 8th thickness, in the wavelength zone 250-2000nm, satisfaction
High-selenium corn condition are as follows:
(R+T)≤5%, AX>=95%, R+T+AX=1.
In the devices set out in the foregoing, the transparent dielectric material selection SiO of the first layer, third layer, layer 5, layer 72, glass
Glass (such as BK7), CaF2, KCl or MgF2。
In the devices set out in the foregoing, the second layer, the 4th layer, transition metal films material selection Ti, W, Cr of layer 6.
In the devices set out in the foregoing, described 8th layer complete nontransparent high reflecting metal material selection Ag, Al, Cu, Au.
In the devices set out in the foregoing, the 8th thickness degree 100-150nm, layer 7 thickness 40-60nm, layer 6 thickness 10-
20nm, layer 5 thickness 40-80nm, the 4th thickness degree 5-10nm, third layer thickness 40-80nm, second layer thickness 2-5nm, the
A layer thickness 60-80nm.
The invention has the advantages that significantly enhancing the light absorption of the wavelength zone 250-2000nm using 8 layer film structures
Rate, by the optimization computation of structural parameters, average absorption ratio can be greater than 95%, especially in near-infrared 1000-2000nm
The absorptivity of wavelength zone is significantly improved, and has higher photothermal conversion efficiency, is pushed away convenient for device in broader spectral regions
Wide application.
Detailed description of the invention
With reference to the accompanying drawing and embodiment, to real material selected by the present invention and structural parameters and obtained
As a result it is described in further detail.
Fig. 1 is in a kind of broadband photothermal conversion thin-film device of infrared enhancing of the present invention by transition metal and transparent
8 layer film structure schematic diagrames of medium mixing.
Fig. 2 is that Fig. 1 structure is based in embodiment, uses transition metal Ti for absorbing material；SiO2For dielectric material；Cu is
High reflecting metal absorbing material, using SiO2(65.0nm)/Ti(3.4nm)/SiO2(72.6nm)/Ti(6.3nm)/SiO2
(67nm)/Ti(12.9nm)/SiO2The structural parameters of (52.4nm)/Cu (> 100.0nm), obtain 250-2000nm spectral regions
Reflectance spectrum R and absorption spectra A calculating and experimental result correlation data figure.
Specific embodiment
A kind of broadband photothermal conversion thin-film device of infrared enhancing of the invention is one kind by metal and nonmetal film group
At 8 film structures, be the improvement to usually reflecting and transmiting non-absorbing membrane structure, structure are as follows:
First layer is transparent dielectric film, and effect is to reduce the light reflection loss of transition metal layer surface, and by transition
Metal layer and isolated from atmosphere, effective protection transition metal layer.
The second layer is light absorbing layer, enhances the absorption characteristic of infrared region, using transition metal films.
Third layer is transparent dielectric film, plays the role of optical amplitude and phase matched in the structure, makes photon energy master
It concentrates in transition metal layer, is absorbed by transition metal layer.
4th layer is light absorbing layer, using transition metal films.
Layer 5 is transparent dielectric film, plays the role of optical amplitude and phase matched in the structure, makes photon energy master
It concentrates in transition metal layer, is absorbed by transition metal layer.
Layer 6 is light absorbing layer, using transition metal films.
Layer 7 is transparent dielectric film, plays the role of optical amplitude and phase matched in the structure, makes photon energy master
It concentrates in transition metal layer, is absorbed by transition metal layer.
8th layer is high reflection layer, using complete nontransparent high reflecting metal film.
In above-mentioned device, first layer, third layer, layer 5, layer 7 transparent dielectric material select SiO2, glass (such as
BK7)、CaF2, KCl or MgF2Transparent dielectric material.
The second layer, the 4th layer, layer 6 transition metal films material selection Ti, W, Cr transition metal material.
8th layer uses Ag, Al, Cu, Au high reflecting metal material.
In the device, the optical constant of each film layer of selection gist of the first to the 6th thickness, in 250-2000nm wavelength
Area, the high-selenium corn condition of satisfaction are as follows:
(R+T)≤5%, AX>=95%, R+T+AX=1.
The present invention is a kind of infrared enhancing broadband photothermal conversion thin-film device, is prepared according to the following steps with structural parameters:
Step 1, under vacuum conditions, using ion sputtering, thermal evaporation, electron beam evaporation and other film growth methods,
The 8th layer of complete nontransparent high reflecting metal film of suitable thickness (> 100nm) is deposited in the glass substrate of polishing, formation
Membrane structure has complete nontransparent high reflection spectral characteristic in 250-2000nm spectral regions.
Step 2, then on the 8th layer of complete nontransparent high reflecting metal film, deposit suitable thickness (40-60nm)
Layer 7 transparent dielectric film, plays the role of optical amplitude and position matches.
Step 3, then on layer 7 transparent dielectric film, the layer 6 transition metal of relatively small thickness (10-20nm) is deposited
Film layer plays the role of very strong photon energy absorption.
Step 4, then in layer 6 transition metal film layer, transparent Jie of layer 5 of suitable thickness (40-80nm) is deposited
Plasma membrane layer, plays the role of optical amplitude and position matches.
Step 5, the 4th layer of transition metal films of relatively small thickness (5-10nm) then are deposited in layer 5 transparent medium film layer
Layer, plays the role of very strong photon energy absorption.
Step 6, then in the 4th layer of transition metal film layer, transparent Jie of third layer of suitable thickness (40-80nm) is deposited
Plasma membrane layer, plays the role of optical amplitude and position matches.
Step 7, the second layer transition metal films of relatively small thickness (2-5nm) then are deposited in third layer transparent medium film layer
Layer, plays the role of very strong photon energy absorption.
Step 8, finally, the first layer for depositing suitable thickness (60-80nm) in the transition metal film layer of the second layer is transparent
Media coating plays antireflection and by the protective effect of transition metal layer and isolated from atmosphere, significantly improves device in atmospheric environment
The reliability of medium-term and long-term work.
The photothermal conversion thin-film device of 8 layers of transition metal and transparent medium preparation designed by the invention, can be in 250-
2000nm spectral regions realize photonic absorbance Ax>=95% performance.This is that a kind of performance is stable, no pollution to the environment, technique
Simply, cost is relatively low, materials are relatively easy to, operating temperature is high, can obtain the device of practical application popularization.
Embodiment
As shown in Figure 1, in various selectable structural parameters, the achievable optimised devices structural parameters of a reality
Are as follows:
First layer 1, antireflection and protective layer, thickness d=65nm, transparent medium SiO2Layer；
The second layer 2, light absorbing layer, thickness d=3.4nm, Ti layers of transition metal；
Third layer 3, optical amplitude and position phase matching layer, thickness d=72.6nm, transparent medium SiO2Layer；
4th layer 4, light absorbing layer, thickness d=6.3nm, Ti layers of transition metal；
Layer 55, optical amplitude and position phase matching layer, thickness d=67nm, transparent medium SiO2Layer；
Layer 66, light absorbing layer, thickness d=12.9nm, Ti layers of transition metal；
Layer 77, optical amplitude and phase matching layer, thickness d=52.4nm, transparent medium SiO2Layer；
8th layer 8, high reflection layer, thickness d > 100nm, Ni metal layer.
Using the present invention of above-mentioned optimised devices structural parameters in the photon reflection of 250-2000nm spectral regions and absorptivity
Characteristic is shown in Fig. 2, this is that eight layer film structures being made of transition metal and transparent medium mixing that the present invention provides exist
The design and absorption characteristic of 250-2000nm spectral regions calculate and experimental result, in very wide 250-2000nm spectral regions, especially
It is in the infrared wavelength zone 1000-2000nm, photon energy has been more than 95% by the average efficiency that device absorbs, and (actual value reaches
98.3%).
Plural layers preparation process can be used and realize designed device spectral characteristic.During the preparation process, using K9 glass
Glass is as 9 material of substrate, surface optical polishing.Then in vacuum film growth system, using ion sputtering, thermal evaporation, electricity
The methods of sub- art evaporation and the growth of other films deposit about > 100nm thickness, purity 99.9% on 9 glass of K9 substrate of polishing
Cu metal layer.Then on Cu metallic diaphragm, continue the SiO for depositing 52.4nm thickness2Dielectric thin film layer forms optical interference
Layer.Then in SiO2Continue to deposit the Ti metal layer that 12.9nm is thick, and purity is 99.9% in film layer.Then in transition metal films
On Ti layer, continue the SiO for depositing 67nm thickness2Dielectric thin film layer forms optical interference layer.Then in SiO2Continue to form sediment in film layer
Product 6.3nm is thick, the Ti metal layer that purity is 99.9%.Then on transition metal films Ti layer, continue to deposit 72.6nm thickness
SiO2Dielectric thin film layer forms optical interference layer.Then in SiO2Continue to deposit 3.4nm thickness in film layer, purity is 99.9%
Ti metal layer.Then the SiO of 65nm thickness is deposited on transition metal films Ti layer2Layer, plays the role of antireflective, and play mistake
The effect for crossing metal layer and isolated from atmosphere, prevents device from aoxidizing, the reliability that enhancing device works for a long time in atmospheric environment.
Those of ordinary skill in the art it should be appreciated that more than embodiment be intended merely to illustrate the present invention,
And be not used as limitation of the invention, as long as the change in spirit of the invention, to embodiment described above
Change, modification will all be fallen in scope of the presently claimed invention.
Claims (1)
1. a kind of broadband photothermal conversion thin-film device of infrared enhancing, which is characterized in that 8 be made of metal and nonmetal film
Film structure, structure are as follows:
First layer is the protective layer of antireflection, using transparent dielectric film；
The second layer is light absorbing layer, using transition metal films；
Third layer is optical amplitude and position phase matching layer, using transparent dielectric film；
4th layer is light absorbing layer, using transition metal films；
Layer 5 is optical amplitude and position phase matching layer, using transparent dielectric film；
Layer 6 is light absorbing layer, using transition metal films；
Layer 7 is optical amplitude and position phase matching layer, using transparent dielectric film；
8th layer is high reflection layer, using complete nontransparent high reflecting metal film；
First layer to the 8th thickness degree each film layer of selection gist optical constant, in the wavelength zone 250-2000nm, the height of satisfaction
Acceptance condition are as follows:
(R+T)≤5%, AX>=95%, R+T+AX=1；
The first layer, third layer, layer 5, layer 7 material selection SiO2, glass, CaF2, KCl or MgF2Transparent medium
Material；
The second layer, the 4th layer, layer 6 transition metal films material selection Ti, W, Cr；
Described 8th layer uses Ag, Al, Cu, Au；
The 8th thickness degree 100-150nm, layer 7 thickness 40-60nm, layer 6 thickness 10-20nm, layer 5 thickness 40-
80nm, the 4th thickness degree 5-10nm, third layer thickness 40-80nm, second layer thickness 2-5nm, first layer thickness 60-80nm.
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| CN102053288A (en) * | 2010-11-16 | 2011-05-11 | 中国科学院长春光学精密机械与物理研究所 | Color changing film for video bionic stealth |
| CN105252844A (en) * | 2015-10-15 | 2016-01-20 | 复旦大学 | Broadband film type photo-thermal energy conversion device |
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| EP1929542A1 (en) * | 2005-08-30 | 2008-06-11 | Pilkington Group Limited | Light transmittance optimizing coated glass article for solar cell and method for making |
| CN100439092C (en) * | 2006-06-08 | 2008-12-03 | 复旦大学 | Light heat energy conversion device having metal and non-metal multilayer film structure |
| CN106052171A (en) * | 2016-06-21 | 2016-10-26 | 华中科技大学 | Selective absorption film |
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| CN105252844A (en) * | 2015-10-15 | 2016-01-20 | 复旦大学 | Broadband film type photo-thermal energy conversion device |
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