CN106558596A - A kind of chip for LED/light source and preparation method thereof and light source - Google Patents
A kind of chip for LED/light source and preparation method thereof and light source Download PDFInfo
- Publication number
- CN106558596A CN106558596A CN201510602855.6A CN201510602855A CN106558596A CN 106558596 A CN106558596 A CN 106558596A CN 201510602855 A CN201510602855 A CN 201510602855A CN 106558596 A CN106558596 A CN 106558596A
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- Prior art keywords
- led
- chip
- light source
- luminous
- unit
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Abstract
The present invention relates to a kind of chip for LED/light source and preparation method thereof.Belong to LED technology field, the chip of LED/light source of the present invention, comprising two or more unit of luminous, unit of luminous is directly or indirectly electrically connected with the power supply, and improves the light emission rate of chip, increases heat and dissipates, and is beneficial to industrialized production.
Description
Technical field
The present invention relates to one kind is used for
LED
Chip of light source and preparation method thereof and light source, belong to
LED
Preparing technical field.
Background technology
The advantages of light source is with its luminous efficiency height, few light source power consumption, long service life, strong, environmental security reliability, energy-conservation so as to increasingly favored by consumers in general.On the other hand, under the worried background elevated once again of Present Global energy starved, energy saving is the important problem that we will face in future, in lighting field,
LED
The application of luminous product is just attract the sight of common people, and some developed countries surround in the world
LED
Development expand fierceness technology contest.The U.S. from
2000
Year plays investment
5
Hundred million dollars are implemented " National Semiconductor illumination plan ", and European Union also exists
2000
Year
7
Announce the moon to start similar " rainbow plan ".The Department of Science and Technology of China "
863
" under the support planned,
2003
Year
6
Propose first in month to develop semiconductor lighting plan.
LED
As a kind of new green light source product, the fields such as various instructions, display, decoration, backlight, general lighting and urban landscape are can be widely applied to.
Lamp is Semiconductor light-emitting diode lamp, is a kind of semiconducting solid luminescent device.It is to utilize solid semiconductor
LED
There is the compound energy for releasing surplus by carrier and cause photon to launch as luminescent material in chip, during building crystalline substance due to extension, defect is unavoidably present in the semiconductors, and
LED
Light electric energy and be converted into during luminous energy the heat energy as accessory substance and exist, make
LED
It is each at present that lamp heat dissipates
LED
The focus of research institution's research.
The content of the invention
The present inventor is based on reduction
LED
The generation of accessory substance heat energy in ignition, improves the luminosity of chip, improves heat and dissipates, and having invented one kind is used for
LED
The chip of light source, chip by epitaxial substrate layer, epitaxial layer, current-diffusion layer,
P\N
Pole etc. constitute, each chip by
2
It is individual or
2
It is individual more than unit of luminous constitute, in one single chip each unit of luminous except in epitaxial layer substrate layer with up to epitaxial layer
N
Podium level, epitaxial layer other parts and current-diffusion layer are independently arranged, and have one above each unit of luminous respectively
P
Pole and one
N
Pole.Multiple unit of luminous are included on one chip, it is possible to reduce the defect concentration caused by mismatching because of material, in addition because in chip between each unit of luminous luminescent layer be it is each independent, and
LED
In ignition, electric energy is converted into luminous energy byproduct in process thing heat and is concentrated mainly on luminescent layer, can improve heat by independent luminescent layer and dissipate, and increases heat and dissipates and light-emitting area product.Prior art chip is bigger because of chip, higher with respect to defect concentration, and chip epitaxial layer defects directly result in electric leakage, and antistatic effect is poor, and the present invention reduces extension internal stress by being divided into several unit of luminous to chip, reduces defect concentration,
LED
In ignition, heat is mainly derived from defect, and defect is mainly derived from the mismatch for building brilliant substrate and epitaxial film materials, no matter the defect caused by mismatch between this material and material is from theoretical or practical studies result, show it is all unavoidable, inventor passes through numerous studies, Experimental Comparison finds independently to be divided into luminescent layer in chip several individually luminous individualities Jing many times, heat energy generation can be effectively reduced with this, heat can be improved simultaneously to dissipate, and increased chip light-emitting rate.
The present invention is used for
LED
Unit of luminous in the chip of light source, wherein each chip is segmented into
1
Group or
1
More than group, in group, unit of luminous is arranged side by side, in group
P\N
Pole orientation is consistent, such as schemes
1
It is shown；Between group and group：One group of unit of luminous
P
The pole unit of luminous adjacent with adjacent sets
N
It is extremely adjacent.The unit of luminous of chip is arranged such and is on the one hand conducive to wire to arrange, and be conducive in parallel between unit of luminous, relatively small power chip, dead lamp when solving the problems, such as that small-power chip is in parallel, each small-power chip is to be sorted again through incision again, because each small-power chip individual difference is obvious, voltage inequality causes current distributing, it is maximum that electric current walks heat toward the circuit of most bottom voltage, easily glue splits dead lamp, but unit of luminous is adjacent on position in epitaxial wafer in one single chip of the present invention, its voltage individual difference is almost negligible, so as to improve
LED
The yield of light source.
The present invention is used for
LED
The chip of light source, inventor are based on current technology, it has been investigated that each chip is included
2
——
9
During individual unit of luminous its in preparation process, especially epitaxial wafer cut into slices the sliver stage yield highest.But after being not excluded for the raising of sliver technology is cut after, include in a chip in industrialized production
10
It is individual and
10
Unit of luminous more than individual.
The present invention is used for
LED
The chip of light source, under the restriction of current technology, based on considering for above-mentioned yield, the area of each chip is preferably inventor
0.01mm
2
——
6mm
2
Between.
In currently available technology
LED
The heat of light source dissipates
LED
Chip heat is down conducted to substrate layer, carries out heat by substrate layer and dissipates, and the present invention is used for
LED
The chip of light source, wherein epitaxy layer thickness are preferably
1
μ
m
——
50
μ
m
Between, inventor's research finds the present invention's
LED
Under light source works state, its heat is concentrated mainly on luminescent layer, and inventor has found that in research process the heat of luminescent layer greatly is more easy to be dissipated by upload mode, and inventor is prepared on each unit of luminous
P\N
Pole, and
P\N
The wire of pole is directly or indirectly electrically connected with the power supply, by the scattered preferably to improve heat of the electrode and wire on unit of luminous, each unit of luminous
P
Pole and
N
The diameter of wire extremely gone up preferably is selected from
0.015mm
——
0.05mm
Between.Conductor material is selected from gold thread, copper cash, aluminum steel, silver wire, alloy gold copper cash, alloy metallized thread.Electrode on single unit of luminous
P
With electrode
N
Diameter be respectively greater than
60
μ
m
, electrode
P
With electrode
N
Thickness be more than
0.9
μ
m
, electrode
P
With electrode
N
It is made up of the material of high heat conduction, high tack, material preferably is selected from：
Au, Ag, Al, Cu, Cr, Pb
。
The present invention is used for
LED
The chip of light source, its epitaxial layer by
Al
x
InGaN
1-x
With
In
x
GaN
1-x
Constitute,
x
For
0
——
80%
Between.
The present invention is used for
LED
The chip of light source, its current-diffusion layer are selected from：Indium tin oxide, nickel and billon.
It is used for improve the present invention
LED
The scattered ability of light emission rate and heat of the chip of light source, apart from ＞ between two neighboring unit of luminous edge in chip
5
μ
m
。
Another aspect of the present invention is used for there is provided the present invention
LED
The preparation method of the chip of light source, by etching epitaxial wafer：It is used to prepare including each unit of luminous in each chip
N
The epitaxial wafer in the region of electrode is etched to
N
In podium level, and chip, between each adjacent unit of luminous, epitaxial layer is etched to
N
Podium level；Prepare on unit of luminous
P\N
Electrode；Prepare current-diffusion layer；With chip as unit cutting, splitting epitaxial wafer.In chip prepared by the present invention, unit of luminous reduces preparation section, improves technique preparation efficiency, saved material and human cost relative to small-power chip.Chip of the chip of the present invention relative to equal-wattage, improves light emission rate and the scattered ability of heat.
The present invention is used for
LED
The preparation method of the chip of light source, inventor further dissipate heat and light emission rate composite chip other considerations, make chip to optimum state, and in chip, between each adjacent unit of luminous, epitaxial layer is etched to
N
Podium level, etched width are preferably greater than
5
μ
m
。
The present invention is used for
LED
The preparation method of the chip of light source, the unit of luminous in chip are divided into
1
Group or
1
More than group, in group, unit of luminous is arranged side by side, in group
P\N
Pole orientation is consistent, adjacent unit of luminous between group and group
P
Pole with
N
It is extremely adjacent.
The present invention is used for
LED
The preparation method of the chip of light source, wherein each chip area are
0.01mm
2
——
6mm
2
Between, comprising
2-9
Individual unit of luminous.
The present invention is used for
LED
The preparation method of the chip of light source, the electrode in its chips on single unit of luminous
P
With electrode
N
Gross area ＞
0.002mm
2
, each thickness of electrode is more than
1
μ
m
, material is selected from：
Au, Ag, Al, Cu, Cr, Pb
。
Another aspect of the present invention provides the present invention's
LED
Prepared by chip
LED
Light source, including one or more chip, on substrate, substrate can be transparency carrier or opaque substrate to chip package, more than one chip can be it is connected in series or in parallel in
LED
Power supply on.
The present invention's
LED
Prepared by chip
LED
The strip integrated optical sources such as light source, preferred filament lamp, strip integrated optical source prepared by currently available technology in working order under, find when measuring its temperature
90%
Heat energy all concentrate in the colloid between chip substrate and substrate, this part heat carries out the probability that heat dissipates from substrate and goes to zero.The light source of the present invention is due to having used the present invention's
LED
Chip, its in working order under the heat major part of generation can be because of the present invention
LED
The unique texture of chip and introduce up, carrying out effectively heat by the wire on electrode and electrode dissipates, so as to reduce because
LED
Light source descends heat evacuate in time in working order, the too high series of problems for causing of temperature.
Description of the drawings
The present invention accompanying drawing be in order to the present invention is further described, rather than to the present invention invention scope restriction.
Figure
1
, the present invention is used for
LED
The chip structure schematic diagram of light source.
Figure
2
, the present invention is used for
LED
The chip profile schematic diagram of light source.
Figure
3
, with the present invention chip prepare
LED
Light source schematic top plan view.
Figure
4
, with the present invention chip prepare
LED
The schematic perspective view of light source.
Explanation：
1
, be
P
Electrode,
2
, be
N
Electrode,
3
, for unit of luminous,
3'
, for omit unit of luminous,
4
、
N
Podium level,
5
, wire,
6
、
P
Podium level,
7
, luminescent layer,
8
, substrate layer
,9
, chip
1,10
, chip
2,11
, for omit chip
,12
, chip
N,13
, transparency carrier or opaque substrate.
Specific embodiment
Embodiments of the invention be in order to the present invention is further described, rather than to the present invention invention scope restriction.
Embodiment
For
LED
The chip of light source
Taking and brilliant complete epitaxial wafer being built into chip processing procedure, wherein epitaxial part thickness is
10
μ
m
Left and right, each unit of luminous region in planning chip region and chip, each chip
2mm
2
Including
6
Individual unit of luminous, unit of luminous are arranged side by side,
P\N
Pole orientation is consistent, and epitaxial wafer is etched, and on the one hand in etching chip, each unit of luminous is used to prepare
N
The region of electrode, is etched to
N
Podium level, while etching the epitaxial layer in chip between each adjacent unit of luminous, etched width
40
μ
m
Left and right, is also etched to
N
Podium level, prepares copper to the unit of luminous in each chip
P\N
Electrode, the electrode on a unit of luminous
P
With electrode
N
The gross area
0.01mm
2
, thickness of electrode
2
μ
m
, current-diffusion layer is prepared with indium tin oxide.
Claims (26)
1. a kind of chip for LED/light source, including epitaxial substrate layer, epitaxial layer, current-diffusion layer, P N poles, it is characterized in that each chip is made up of the unit of luminous of 2 or more than 2, each unit of luminous except in epitaxial layer substrate layer with N podium levels in up to epitaxial layer, epitaxial layer other parts and current-diffusion layer are independently arranged, and have a P poles and a N poles above each unit of luminous respectively.
2. the chip for LED/light source according to claim 1, it is characterised in that unit of luminous has 1 group or more than 1 group, in group, unit of luminous is arranged side by side, in group P the orientation of N poles it is consistent；Between group and group：The N of the P poles of the one group of unit of luminous unit of luminous adjacent with adjacent sets is extremely adjacent.
3. the chip for LED/light source according to claim 1, it is characterised in that each chip includes 2 --- 9 unit of luminous.
4. the chip for LED/light source according to claim 1, it is characterised in that chip area is 0.01mm2——6mm2Between.
5. the chip for LED/light source according to claim 1, it is characterised in that each unit of luminous is directly or indirectly electrically connected with the power supply by the wire that point is extremely gone up in P poles, N.
6. the chip for LED/light source according to claim 5, it is characterised in that described diameter of wire is 0.015mm --- between 0.05mm.
7. the chip for LED/light source according to claim 6, it is characterised in that described wire is selected from gold thread, copper cash, aluminum steel, silver wire, alloyed copper palladium line, alloy metallized thread.
8. the chip for LED/light source according to claim 1, it is characterised in that described epitaxial layer is by AlxInGaN1-xAnd InxGaN1-xConstitute, x is 0 --- between 80%.
9. the chip for LED/light source according to claim 8, it is characterised in that described epitaxy layer thickness is 1 μm --- between 100 μm.
10. the chip for LED/light source according to claim 1, it is characterised in that described current-diffusion layer is selected from：Indium tin oxide, nickel and billon.
11. chips for LED/light source according to claim 1, it is characterised in that apart from 5 μm of ＞ between two neighboring unit of luminous edge.
12. chips for LED/light source according to claim 1, it is characterised in that the diameter of the electrode P on single unit of luminous and electrode N is respectively greater than 60 μm.
13. chips for LED/light source according to claim 1, it is characterised in that the thickness of electrode P and electrode N is more than 0.9 μm.
14. chips for LED/light source according to claim 1, it is characterised in that electrode P is made up of the material of high heat conduction, high tack with electrode N.
15. chips for LED/light source according to claim 1, it is characterised in that electrode P is selected from the material of electrode N：Au, Ag, Al, Cu, Cr, Pb.
The preparation method of the chip for LED/light source described in 16. any one of claim 1-15：
Etching epitaxial wafer：The epitaxial wafer in the region for being used to prepare N electrode including each unit of luminous in each chip is etched to N podium levels, and between each adjacent unit of luminous, epitaxial layer is etched to N podium levels in chip；
Prepare P on unit of luminous N electrode；
Prepare current-diffusion layer；
With chip as unit cutting, splitting epitaxial wafer.
The preparation method of 17. chips for LED/light source according to claim 16, it is characterised in that epitaxial layer is etched to N podium levels, 5 μm of etched width ＞ between each adjacent unit of luminous in described chip.
The preparation method of 18. chips for LED/light source according to claim 16, it is characterized in that the unit of luminous in the chip is divided into 1 group or more than 1 group, in group, unit of luminous is arranged side by side, in group P the orientation of N poles it is consistent, between group and group, the P poles of adjacent unit of luminous are extremely adjacent with N.
The preparation method of 19. chips for LED/light source according to claim 16, it is characterised in that described each chip area is 0.01mm2——6mm2Between, comprising 2-9 unit of luminous.
The preparation method of 20. chips for LED/light source according to claim 16, it is characterised in that the electrode P on the single unit of luminous and electrode N gross area ＞ 0.002mm2, more than 1 μm, material is selected from each thickness of electrode：Au, Ag, Al, Cu, Cr, Pb.
21. a kind of LED/light sources, comprising the chip for LED/light source described in one or more any one of claim 1-15.
22. LED/light sources according to claim 21, it is characterised in that described chip package is on substrate.
23. LED/light sources according to claim 22, it is characterised in that described substrate includes transparency carrier, opaque substrate.
24. LED/light sources according to claim 21, it is characterised in that connected in series or in parallel on the power supply of LED between described more than one chip.
25. LED/light sources according to claim 21, it is characterised in that described light source is strip integrated optical source.
26. LED/light sources according to claim 25, it is characterised in that described strip integrated optical source is filament lamp source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510602855.6A CN106558596A (en) | 2015-09-21 | 2015-09-21 | A kind of chip for LED/light source and preparation method thereof and light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510602855.6A CN106558596A (en) | 2015-09-21 | 2015-09-21 | A kind of chip for LED/light source and preparation method thereof and light source |
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| Publication Number | Publication Date |
|---|---|
| CN106558596A true CN106558596A (en) | 2017-04-05 |
Family
ID=58414991
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510602855.6A Pending CN106558596A (en) | 2015-09-21 | 2015-09-21 | A kind of chip for LED/light source and preparation method thereof and light source |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659330A (en) * | 2018-12-14 | 2019-04-19 | 鸿利智汇集团股份有限公司 | A kind of LED component and its manufacturing method |
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| US20120326171A1 (en) * | 2009-12-14 | 2012-12-27 | Seoul Opto Device Co., Ltd. | Light emitting diode having electrode pads |
| CN205016529U (en) * | 2015-09-21 | 2016-02-03 | 江西宝盛半导体能源科技有限公司 | A LED light source that is used for chip of LED light source and uses its preparation |
-
2015
- 2015-09-21 CN CN201510602855.6A patent/CN106558596A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100197060A1 (en) * | 2009-02-05 | 2010-08-05 | Chun-Yen Chang | Method of Forming Laterally Distributed LEDs |
| US20120326171A1 (en) * | 2009-12-14 | 2012-12-27 | Seoul Opto Device Co., Ltd. | Light emitting diode having electrode pads |
| CN102479914A (en) * | 2010-11-29 | 2012-05-30 | 上海蓝宝光电材料有限公司 | High-efficiency high-voltage electrode side wall bonding type light emitting diode (LED) chip and manufacture method thereof |
| CN102185066A (en) * | 2011-04-26 | 2011-09-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-power LED (light emitting diode) with improved structure |
| CN102354699A (en) * | 2011-09-30 | 2012-02-15 | 映瑞光电科技(上海)有限公司 | High-voltage nitride-based LED (light emitting diode) device and manufacturing method thereof |
| CN205016529U (en) * | 2015-09-21 | 2016-02-03 | 江西宝盛半导体能源科技有限公司 | A LED light source that is used for chip of LED light source and uses its preparation |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659330A (en) * | 2018-12-14 | 2019-04-19 | 鸿利智汇集团股份有限公司 | A kind of LED component and its manufacturing method |
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Application publication date: 20170405 |