CN106558564B - The structure-improved of copper metal on back of semiconductor component - Google Patents
The structure-improved of copper metal on back of semiconductor component Download PDFInfo
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- CN106558564B CN106558564B CN201610146262.8A CN201610146262A CN106558564B CN 106558564 B CN106558564 B CN 106558564B CN 201610146262 A CN201610146262 A CN 201610146262A CN 106558564 B CN106558564 B CN 106558564B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4825—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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Abstract
A kind of structure-improved of copper metal on back of semiconductor component, wherein aforementioned structure-improved from top to bottom sequentially includes an active layer, a substrate, a back metal seed layer, a resistance to lasting high temperature buffer layer, a metal layer on back and an at least anti-oxidant metal layer, wherein the material of the back metal seed layer includes palladium and phosphorus, the material of the resistance to lasting high temperature buffer layer is nickel, silver or nickel alloy, and the material of metal layer on back is copper.It can make characteristic of the semiconductor wafer with resistance to lasting high-temperature operation with structure provided by the present invention；Each metal-layer structure at its back side is after through persistence high temperature test, still maintain the integrality of its structure, and the phenomenon that being not likely to produce gap, removing or slight crack, being not likely to produce imperfect earth, and effectively enhance the resistance to lasting high-temperature operation characteristic of chip and the reliability of chip.
Description
Technical field
The present invention relates to a kind of structure-improveds of copper metal on back of semiconductor component, and espespecially one kind is with copper as back metal
Layer, back metal seed layer includes palladium (Pd) and phosphorus (P), and a resistance to lasting high temperature buffer layer is inserted between aforementioned two layers,
Make semiconductor element that there is the structure-improved of resistance to lasting high-temperature operation characteristic.
Background technique
It would generally include the processing procedure of back metal, the processing procedure relationship of the back metal in the processing procedure of semiconductor element
To characteristics such as the flexural strength of semiconductor element, heat dissipation and ground connection.1st figure is an existing copper metal on back of semiconductor component
Structural schematic diagram, wherein structure successively includes a substrate 101, a diffusion barrier layer 105, a stress elimination metal layer 107, one
Metal layer on back 109 and an anti oxidation layer 111；Wherein the diffusion barrier layer 105 is formed under the substrate 101, the diffusion
The material on barrier layer 105 is tantalum nitride (TaN), and major function is that other metal materials is stopped to diffuse into the substrate 101, into
And have an adverse effect to element；The stress elimination metal layer 107 is formed under the diffusion barrier layer 105, the stress elimination
The material of metal layer 107 is golden (Au), and major function is to slow down or eliminate its flowering structure because of non-uniform expansion or shrinkage institute
Caused structure removing；The material of the metal layer on back 109 is copper (Cu), and thickness need to support the substrate 101 encapsulating enough
When suffered stress, while can also help the element radiating on the substrate 101；The material of the anti oxidation layer 111 is golden (Au), can
Prevent the metal layer on back 109 from aoxidizing.
However with tantalum nitride (TaN) as diffusion barrier layer, with golden (Au) as stress elimination metal layer, again with copper (Cu)
As metal layer on back, performance that the selection of this three-layer structure material operates semiconductor element high temperature resistant is simultaneously ideal not to the utmost；
The heat dissipation of modem semiconductor devices and high-temperature stability are critically important projects, can if the high-temperature stability of the element is undesirable
Semiconductor element can be caused to be damaged because of overheat, especially when semiconductor element has back side guide hole, the deep width of usual back side guide hole
Very bigger than all, under high-temperature operation, this three-decker is easier to generate gap, phenomena such as slight crack, removing occurs, causes ground connection not
Good situation, and keep the semiconductor element impaired.
In view of this, the present invention, in order to improve above-mentioned disadvantage, the present invention proposes a kind of partly leading for resistance to lasting high-temperature operation
The structure-improved of volume elements part copper metal on back not only can effectively promote the high temperature resistant operating characteristic of semiconductor element, reduce member
The part probability impaired because of overheat, while the heat-conducting effect of chip can be improved again, and reduce material cost.
Summary of the invention
The main purpose of the present invention is to provide a kind of structure-improved of copper metal on back of semiconductor component, help to be promoted
The resistance to lasting high-temperature operation characteristic of element.
In order to reach above-mentioned purpose, the present invention provides a kind of copper metal on back of semiconductor component structure-improved, comprising: one
Active layer, a substrate, a back metal seed layer, a resistance to lasting high temperature buffer layer and a metal layer on back.The active layer shape
At in the substrate one front, and the active layer include an at least integrated circuit.The back metal seed layer is formed in the substrate
A back side, and constitute the back metal seed layer material include palladium and phosphorus.The resistance to lasting high temperature buffer layer is formed in this
The lower section of back metal seed layer.The metal layer on back is formed in the lower section of the resistance to lasting high temperature buffer layer, and constitutes the back side
The material of metal layer is copper.
In an embodiment, it is contained in the distribution of the palladium of the back metal seed layer and is contained in the back metal seed layer
The distribution of phosphorus at least partly mutually overlap.
In an embodiment, the palladium for being contained in the back metal seed layer is to be distributed evenly in the back metal seed
Layer, and the phosphorus for being contained in the back metal seed layer is to be distributed evenly in the back metal seed layer.
In an embodiment, the palladium for being contained in the back metal seed layer is distributed across the back side for being closer to the substrate,
And the phosphorus for being contained in the back metal seed layer is distributed across and is closer to the resistance to lasting high temperature buffer layer.
In an embodiment, the back metal seed layer include one first sublevel and one second sublevel, constitute this first
The material of sublevel is palladium, and the material for constituting second sublevel is phosphorus.
In an embodiment, which is formed in the back side of the substrate, which is formed in the first time
The lower section of layer, and the resistance to lasting high temperature buffer layer is formed in the lower section of second sublevel.
In an embodiment, the material for constituting the resistance to lasting high temperature buffer layer is nickel alloy.
In an embodiment, the material for constituting the resistance to lasting high temperature buffer layer is nickel.
In an embodiment, the material of the resistance to lasting high temperature buffer layer is constituted as silver.
In an embodiment, a thickness of the resistance to lasting high temperature buffer layer is greater thanAnd it is less thanIt is greater than
And it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less thanGreatly
InAnd it is less thanOr it is greater thanAnd it is less than
In an embodiment, further include an at least anti-oxidant metal layer, wherein this at least an anti-oxidant metal layer is formed in
The lower section of the metal layer on back.
In an embodiment, the material for constituting an at least anti-oxidant metal layer includes selected from one of following group: nickel,
Gold, palladium, vanadium, nickel billon, Ni-Pd alloy, Polarium, nickel alloy and nickel-vanadium alloy.
In an embodiment, an at least guide hole is further included, wherein an at least guide hole is formed in the back side of the substrate, should
One inner surface of an at least guide hole is covered by the back metal seed layer.
In an embodiment, a thickness of the back metal seed layer is greater thanAnd it is less thanIt is greater than
And it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less thanGreatly
InAnd it is less thanOr it is greater thanAnd it is less than
To further appreciate that the present invention, preferred embodiment is lifted below, cooperates schema, figure number, by specific structure of the invention
At content and its it is reached the effect of detailed description are as follows.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure of the copper metal on back of the prior art.
Fig. 2A is the structure improved specific embodiment of copper metal on back of semiconductor component of the invention in copper metal on back
The schematic diagram of the section structure before change.
Fig. 2 B is that the cross-section structure of the structure improved specific embodiment of copper metal on back of semiconductor component of the invention shows
It is intended to.
Fig. 2 C is the structure improved specific embodiment of copper metal on back of semiconductor component of the invention in metal layer on back
Form the schematic diagram of the section structure of street shape groove.
Fig. 2 D is that the structure improved specific embodiment of copper metal on back of semiconductor component of the invention forms at least primary antibody
The schematic diagram of the section structure after metal oxide layer.
Fig. 2 E is the cross-section structure of the structure improved another specific embodiment of copper metal on back of semiconductor component of the invention
Schematic diagram.
Fig. 2 F is the structure improved another specific embodiment of copper metal on back of semiconductor component of the invention in back metal
Layer forms the schematic diagram of the section structure of street shape groove.
Fig. 2 G is that the structure improved another specific embodiment of copper metal on back of semiconductor component of the invention forms at least one
The schematic diagram of the section structure after anti-oxidant metal layer.
Fig. 2 H is the partial enlarged view of Fig. 2 B.
Fig. 3 A is copper metal on back of semiconductor component structure-improved of the invention after persistence high temperature test, then with energy
C-c ' in dispersive X-ray spectrometer (EDS, Energy-Dispersive X-Ray Spectroscope) analysis chart 2H is cutd open
The analysis result of the structure of upper thread.
The test result of Fig. 3 B local display Fig. 3 A.
Description of symbols: 101- substrate；105- diffusion barrier layer；107- stress elimination metal layer；109- back metal
Layer；111- anti oxidation layer；201- substrate, 203- active layer；205- back metal seed layer；The resistance to lasting high temperature buffer layer of 207-；
209- metal layer on back；211- anti-oxidant metal layer；213- guide hole；215- groove；The first sublevel of 11-；The second sublevel of 12-.
Specific embodiment
2A figure is the structure improved specific embodiment of copper metal on back of semiconductor component of the invention in back side copper gold
The schematic diagram of the section structure before categoryization.Including a substrate 201, an active layer 203 and an at least guide hole 213.Substrate 201
Usually use the semiconductor materials institute such as GaAs (GaAs), indium phosphide (InP), gallium nitride (GaN) or silicon carbide (SiC) structure
At.The front of substrate 201 is provided with an active layer 203, and it includes an at least integrated circuit that active layer 203, which is then,.Due to
Integrated circuit in active layer 203 needs grounding point, therefore can produce required number at the back side of substrate 201 with etching technique
The back side guide hole 213 of amount, the ground connection for the integrated circuit that can be allowed in active layer 203 by back side guide hole 213 are connected to distal end
The access area of configuration.
2B figure is the cross-section structure of the structure improved specific embodiment of copper metal on back of semiconductor component of the invention
Schematic diagram.Its primary structure is roughly the same with embodiment shown in 2A figure, only, wherein a back metal seed layer 205 is formed
Lower section and the back of back metal seed layer 205 are formed in a back side of substrate 201, a resistance to lasting high temperature buffer layer 207
Face metal layer 209 is formed in the lower section of resistance to lasting high temperature buffer layer 207.Back metal seed layer 205 covers the back of substrate 201
The inner surface of face and guide hole 213.The material for constituting back metal seed layer 205 includes palladium and phosphorus.Constitute resistance to lasting high temperature
The preferable material of buffer layer 207 is nickel, nickel alloy or silver.The material for constituting metal layer on back 209 is copper.
In one embodiment, it is contained in the distribution of the palladium of back metal seed layer 205 and is contained in back metal seed layer
The distribution of 205 phosphorus at least partly mutually overlaps.In another embodiment, the palladium and phosphorus of back metal seed layer 205 are contained in
It is to mix.In another embodiment, the palladium and phosphorus for being contained in back metal seed layer 205 are that part is blended in one
It rises.In another embodiment, the palladium and phosphorus for being contained in back metal seed layer 205 are to be uniformly mixed together, wherein wrapping
Palladium contained in back metal seed layer 205 is to be distributed evenly in back metal seed layer 205, and be contained in back metal seed
The phosphorus of layer 205 is to be distributed evenly in back metal seed layer 205.In another embodiment, part is contained in back metal
The palladium and phosphorus of seed layer 205 are to be uniformly mixed together.
In another embodiment, the palladium for being contained in back metal seed layer 205 is distributed across the back for being closer to substrate 201
Face, and the phosphorus for being contained in back metal seed layer 205 is distributed across and is closer to resistance to lasting high temperature buffer layer 207.
Back metal seed layer 205 contains palladium and phosphorus, can be as a Diffusion Barrier, to prevent metal layer on back
209 copper metal diffuses into substrate 201.Use palladium as a part of the material of back metal seed layer 205, can also change
The kind adhesive force to substrate 201.In addition, phosphorus is used more to can be improved as a part of the material of back metal seed layer 205
The effect of preventing the copper metal of metal layer on back 209 from diffusing into substrate 201.
2C figure is the structure improved specific embodiment of copper metal on back of semiconductor component of the invention in back metal
Layer forms the schematic diagram of the section structure of street shape groove.Its primary structure is roughly the same with embodiment shown in 2B figure, only,
In in metal layer on back 209 form street shape groove 215.The structure for forming street shape groove 215, is with exposure development first
Technology is in the region for defining an at least street shape groove 215 on metal layer on back 209, then again to an at least street shape groove
Metal layer on back 209 in 215 region is etched, and makes etch-stop in resistance to lasting high temperature buffer layer 207.
2D figure is that the structure improved specific embodiment of copper metal on back of semiconductor component of the invention forms at least one
The schematic diagram of the section structure after anti-oxidant metal layer.Its primary structure is roughly the same with embodiment shown in 2C figure, only, wherein
The lower section that an at least anti-oxidant metal layer 211 is formed in metal layer on back 209.Therefore metal layer on back 209 and street shape are recessed
Slot 215 is covered by an at least anti-oxidant metal layer 211, to prevent the oxidation of metal layer on back 209.Constitute at least one
The material of anti-oxidant metal layer 211 includes the one selected from following group: nickel, gold, palladium, vanadium, nickel billon, Ni-Pd alloy, palladium
Billon, nickel alloy and nickel-vanadium alloy.In a preferred embodiment, at least an anti-oxidant metal layer 211 contains a gold medal
Layer and a nickel-vanadium alloy layer.
2E figure is the section knot of the structure improved another specific embodiment of copper metal on back of semiconductor component of the invention
Structure schematic diagram.Its primary structure is roughly the same with embodiment shown in 2B figure, and only, wherein back metal seed layer 205 includes
One first sublevel 11 and one second sublevel 12.The material for constituting the first sublevel 11 is palladium, and the first sublevel 11 is formed in substrate
201 back side.The material for constituting the second sublevel 12 is phosphorus, and the second sublevel 12 is formed in the lower section of the first sublevel 11.And it resistance to holds
Long high temperature buffer layer 207 is formed in the lower section of the second sublevel 12.Because palladium can improve the adhesive force to substrate 201, back
First sublevel 11 of face metal seed layer 205 is designed to be formed in the back side of substrate 201.And because phosphorus can be improved more and be prevented
The copper metal of metal layer on back 209 diffuses into the effect of substrate 201, therefore the second sublevel 12 of back metal seed layer 205
It is designed to be formed between the first sublevel 11 and resistance to lasting high temperature buffer layer 207.
2F figure is the structure improved another specific embodiment of copper metal on back of semiconductor component of the invention in back-side gold
Belong to the schematic diagram of the section structure that layer forms street shape groove.Its primary structure is roughly the same with embodiment shown in 2E figure, only,
Wherein street shape groove 215 is formd in metal layer on back 209.The structure for forming street shape groove 215, first with exposure development
Technology is in the region for defining an at least street shape groove 215 on metal layer on back 209, then again to an at least street shape groove
Metal layer on back 209 in 215 region is etched, and makes etch-stop in resistance to lasting high temperature buffer layer 207.
2G figure is that the structure improved another specific embodiment of copper metal on back of semiconductor component of the invention is formed at least
The schematic diagram of the section structure after one anti-oxidant metal layer.Its primary structure is roughly the same with embodiment shown in 2F figure, only,
In an at least anti-oxidant metal layer 211 be formed in the lower section of metal layer on back 209.Therefore metal layer on back 209 and street shape
Groove 215 is covered by an at least anti-oxidant metal layer 211, to prevent the oxidation of metal layer on back 209.It constitutes at least
The material of one anti-oxidant metal layer 211 include selected from following group one: nickel, gold, palladium, vanadium, nickel billon, Ni-Pd alloy,
Polarium, nickel alloy and nickel-vanadium alloy.In a preferred embodiment, at least an anti-oxidant metal layer 211 contains one
Layer gold and a nickel-vanadium alloy layer.
The main purpose of the present invention is to provide a kind of structure-improved of copper metal on back of semiconductor component, help to be promoted
The resistance to lasting high-temperature operation characteristic of element.The structure-improved of copper metal on back of semiconductor component must be able to through persistence high temperature side
It tries (350 DEG C, 30 minutes).Therefore, the structure-improved of copper metal on back of semiconductor component is considered in which must have globality.It is first
First, back metal seed layer 205 must have good adhesive force to substrate 201 (GaAs).And in the present invention, it is contained in back-side gold
The palladium belonged in seed layer 205 has good adhesive force to substrate 201 (GaAs).Secondly, also needing good diffusion barrier
Hinder layer, to prevent the copper metal of metal layer on back 209 from diffusing into substrate 201.The palladium being contained in back metal seed layer 205
Also have the function of Diffusion Barrier, can prevent the copper metal of the metal layer on back 209 of part from diffusing into substrate 201.But palladium
Effect is not good enough.Therefore, structure improved back metal seed layer 205 packet of copper metal on back of semiconductor component of the invention
Palladium and phosphorus are contained.Wherein the Diffusion Barrier function of phosphorus is very distinguished, can be more effectively prevented from the copper of metal layer on back 209
Metal diffuses into substrate 201.Both the palladium and phosphorus being contained in back metal seed layer 205 can highly prevent back-side gold
The copper metal for belonging to layer 209 diffuses into substrate 201.In one embodiment, when the palladium being contained in back metal seed layer 205
The effect of distribution is when being relatively close to substrate 201, and palladium can more play its good adhesive force with substrate 201 (GaAs).And it wraps
Distribution contained in the phosphorus in back metal seed layer 205 is then closer to resistance to lasting high temperature buffer layer 207, can play simultaneously with palladium
The effect of preventing the copper metal of metal layer on back 209 from diffusing into substrate 201.And wherein resistance to lasting high temperature buffer layer 207 by nickel,
Silver or nickel alloy are constituted.The principal element for selecting nickel, silver or nickel alloy is considering in each adjacent intermetallic mutual fusibleness.
Metal layer on back 209 (copper) and resistance to lasting high temperature buffer layer 207 (nickel, silver or nickel alloy) have good mutual at 350 DEG C
Fusibleness.Therefore, by persistence high temperature test (350 DEG C, 30 minutes), metal layer on back 209 (copper) and resistance to lasting high temperature are slow
Rushing layer 207 (nickel, silver or nickel alloy) can mutually be melted together well near border each other.Similarly, resistance to lasting high-temperature buffer
207 (nickel, silver or nickel alloy) of layer and back metal seed layer 205 (palladium) have good mutual fusibleness at 350 DEG C.Therefore,
By persistence high temperature test (350 DEG C, 30 minutes), resistance to lasting high temperature buffer layer 207 (nickel, silver or nickel alloy) and back-side gold
Belonging to seed layer 205 (palladium) can mutually be melted together well near border each other.In an optimal embodiment, semiconductor element
The structure improved design of copper metal on back includes that back metal seed layer 205 (containing palladium and phosphorus), resistance to lasting high temperature are slow
Rush layer 207 (nickel, silver or nickel alloy) and metal layer on back 209 (copper).The structure-improved of this copper metal on back of semiconductor component
Design can pass through persistence high temperature test (350 DEG C, 30 minutes).And by persistence high temperature test (350 DEG C, 30 minutes) it
Afterwards, the imperfect earth of any metal-stripping phenomenon or generation any element is not had.Therefore, the reliability of element can quilt
Significantly promoted.
2H figure is the partial enlarged view of 2B figure.3A figure is copper metal on back of semiconductor component improvement knot of the invention
Structure is after persistence high temperature test, then with Energy dispersive x-ray spectrometer (EDS, Energy-Dispersive X-Ray
Spectroscope) the analysis result of the structure of c-c ' hatching in analysis chart 2H.By 3A figure, it is clear that
After passing through persistence high temperature test (350 DEG C, 30 minutes), metal layer on back 209 (copper) and resistance to lasting high temperature buffer layer
207 (nickel) are mutually melted together well near border each other.Overleaf metal layer 209 (copper) and resistance to lasting high temperature buffer layer
There is no significantly boundaries between 207 (nickel).Similarly, resistance to hold after persistence high temperature test (350 DEG C, 30 minutes)
Long high temperature buffer layer 207 (nickel) and back metal seed layer 205 (phosphorus, palladium) are blended in one near border each other well
It rises.Even there is the resistance to lasting high temperature buffer layer 207 (nickel) of part to have diffused into substrate 201 (GaAs) the back side, and with part
Substrate 201 (GaAs) mix.Wherein back metal seed layer 205 contains phosphorus and palladium.Wherein it is contained in the back side
The palladium of metal seed layer 205 is distributed across the back side for being closer to substrate 201, and the phosphorus for being contained in back metal seed layer 205 is
It is distributed in and is closer to resistance to lasting high temperature buffer layer 207.Similarly, after persistence high temperature test (350 DEG C, 30 minutes),
Back metal seed layer 205 (phosphorus, palladium) and substrate 201 (GaAs) mix (especially well near border each other
It is closer this side of substrate 201, is contained in the palladium of back metal seed layer 205).It is contained in back metal seed layer 205
Phosphorus plays the part of the role for preventing the copper metal of metal layer on back 209 from diffusing into substrate 201.From the point of view of result, there is partial rear golden
The copper metal for belonging to layer 209 diffuses into resistance to lasting high temperature buffer layer 207 (nickel).There are also very least a portion of metal layer on back 209
Copper metal diffuses into the region for being contained in the phosphorus of back metal seed layer 205.However, being contained in back metal seed layer 205
Phosphorus block the copper metal of metal layer on back 209 of the overwhelming majority and diffuse into substrate 201.The only back-side gold of small part
The copper metal for belonging to layer 209 diffuses into substrate 201.Scheme please refer to 3B, is the test result of local display 3A figure.3B
Figure is roughly the same with 3A figure, and only, wherein substrate 201 (GaAs) is not displayed in 3B figure.Back is more clearly illustrated by 3B figure
The distribution of the copper metal of the distribution and metal layer on back 209 of the phosphorus of face metal seed layer 205.
Wherein a thickness of resistance to lasting high temperature buffer layer 207 is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less than
It is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd
It is less thanOr it is greater thanAnd it is less than
Wherein a thickness of back metal seed layer 205 is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less than
It is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater thanAnd it is less thanIt is greater than
And it is less thanOr it is greater thanAnd it is less than
The present invention more provides a kind of structure improved manufacturing method of copper metal on back of semiconductor component, including following step
It is rapid: A1: to form an active layer 203 in a front of a substrate 201, wherein active layer 203 contains an at least integrated circuit；
A2: it forms a back metal seed layer 205 and covers the back side of substrate 201 in a back side of substrate 201, wherein constituting back-side gold
The material for belonging to seed layer 205 includes palladium and phosphorus；A3: a resistance to lasting high temperature buffer layer 207 is formed to cover back metal seed
Layer 205；And A4: a metal layer on back 209 is formed to cover resistance to lasting high temperature buffer layer 207, wherein constituting metal layer on back
209 material is copper.The palladium for being wherein contained in back metal seed layer 205 is distributed across the back side for being closer to substrate 201, and wraps
Phosphorus contained in back metal seed layer 205, which is distributed across, is closer to resistance to lasting high temperature buffer layer 207.
In addition, a kind of structure improved manufacturing method of copper metal on back of semiconductor component of the invention further include it is below
Step: by use an etching technique production at least back side guide hole 213 in the back side of substrate 201, wherein the one of back side guide hole 213
Inner surface is covered by back metal seed layer 205.
In addition, step A2 further includes following step: forming one first sublevel 11 of back metal seed layer 205 in substrate
201 back side, wherein the material for constituting the first sublevel 11 is palladium；And form one second sublevel of back metal seed layer 205
12 under the first sublevel 11, wherein the material for constituting the second sublevel 12 is phosphorus, wherein resistance to lasting high temperature buffer layer 207 is formed in
The lower section of second sublevel 12 of back metal seed layer 205.
In addition, a kind of structure improved manufacturing method of copper metal on back of semiconductor component of the invention further include it is below
Step: in the region for defining an at least street shape groove on metal layer on back 209 with light shield；In the region for etching street shape groove
Metal layer on back 209；Termination is etched in resistance to lasting high temperature buffer layer 207, to form street shape groove 215 in metal layer on back
209；And an at least anti-oxidant metal layer 211 is formed to cover metal layer on back 209 and street shape groove 215 to prevent gold
The oxidation of category.
In conclusion according to content disclosed above, a kind of improvement knot of copper metal on back of semiconductor component of the invention
Structure is by using including back metal seed layer 205 (phosphorus, palladium), resistance to lasting high temperature buffer layer 207 (nickel, silver or nickel alloy)
And the three-decker of metal layer on back 209 (copper), and arrange in pairs or groups upper substrate 201 (GaAs), the combination of the selection of material so that
Each metal-layer structure at its back side still maintains the integrality of its structure, and be not likely to produce sky after through persistence high temperature test
Gap, removing or slight crack, the phenomenon that being not likely to produce imperfect earth, and effectively enhance the resistance to lasting high-temperature operation characteristic and crystalline substance of chip
The reliability of piece.And effectively the copper metal of metal layer on back 209 is stopped to diffuse into substrate 201.Therefore, the present invention really may be used
The expected purpose for reaching invention provides a kind of structure-improved of copper metal on back of semiconductor component, the valence utilized in great industry
Value.
Examples are merely exemplary for the above, and it is not intended to limit the scope of the present invention in any way.Art technology
Personnel should be understood that without departing from the spirit and scope of the invention can details and form to technical solution of the present invention
It modifies or replaces, but these modifications and replacement are fallen within the protection scope of the present invention.
Claims (12)
1. a kind of structure-improved of copper metal on back of semiconductor component, comprising:
One substrate, wherein the substrate is made of GaAs, indium phosphide, gallium nitride or silicon carbide；
One active layer is formed in a front of the substrate, and wherein the active layer includes an at least integrated circuit；
One back metal seed layer is formed in a back side of the substrate, wherein the material for constituting the back metal seed layer includes
Palladium and phosphorus；
One resistance to lasting high temperature buffer layer, is formed in the lower section of the back metal seed layer, wherein constituting the resistance to lasting high-temperature buffer
The material of layer is nickel, nickel alloy or silver, wherein the palladium for being contained in the back metal seed layer is distributed across and is closer to the substrate
The back side, and the phosphorus for being contained in the back metal seed layer is distributed across and is closer to the resistance to lasting high temperature buffer layer；And
One metal layer on back is formed in the lower section of the resistance to lasting high temperature buffer layer, wherein the material for constituting the metal layer on back is
Copper.
2. the structure-improved of copper metal on back of semiconductor component as described in claim 1, which is characterized in that be contained in the back side
The distribution of the palladium of metal seed layer and the distribution for the phosphorus for being contained in the back metal seed layer at least partly mutually overlap.
3. a kind of structure-improved of copper metal on back of semiconductor component, comprising:
One substrate, wherein the substrate is made of GaAs, indium phosphide, gallium nitride or silicon carbide；
One active layer is formed in a front of the substrate, and wherein the active layer includes an at least integrated circuit；
One back metal seed layer is formed in a back side of the substrate, wherein the material for constituting the back metal seed layer includes
Palladium and phosphorus；The back metal seed layer includes one first sublevel and one second sublevel, the material for constituting first sublevel are
Palladium, and the material for constituting second sublevel is phosphorus, wherein first sublevel is formed in the back side of the substrate, the second sublevel shape
At in the lower section of first sublevel；
One resistance to lasting high temperature buffer layer, is formed in the lower section of second sublevel of the back metal seed layer, wherein it is resistance to constitute this
The material of lasting high temperature buffer layer is nickel, nickel alloy or silver；And
One metal layer on back is formed in the lower section of the resistance to lasting high temperature buffer layer, wherein the material for constituting the metal layer on back is
Copper.
4. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1 or 3, which is characterized in that it is resistance to constitute this
The material of lasting high temperature buffer layer is nickel alloy.
5. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1 or 3, which is characterized in that it is resistance to constitute this
The material of lasting high temperature buffer layer is nickel.
6. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1 or 3, which is characterized in that it is resistance to constitute this
The material of lasting high temperature buffer layer is silver.
7. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1 or 3, which is characterized in that further include to
A few anti-oxidant metal layer, wherein an at least anti-oxidant metal layer is formed in the lower section of the metal layer on back.
8. the structure-improved of copper metal on back of semiconductor component as claimed in claim 7, which is characterized in that constitute this at least one
The material of anti-oxidant metal layer includes selected from one of following group: nickel, gold, palladium, vanadium, Polarium and nickel alloy.
9. the structure-improved of copper metal on back of semiconductor component as claimed in claim 8, which is characterized in that the nickel alloy is
Nickel billon, Ni-Pd alloy or nickel-vanadium alloy.
10. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1 or 3, which is characterized in that further include to
A few guide hole, wherein an at least guide hole is formed in the back side of the substrate, and an inner surface of an at least guide hole is by the back side
Metal seed layer is covered.
11. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1 or 3, which is characterized in that this is resistance to persistently
One thickness of high temperature buffer layer is greater thanAnd it is less than
12. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1 or 3, which is characterized in that the back-side gold
The thickness for belonging to seed layer is greater thanAnd it is less than
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| US14/868,798 | 2015-09-29 | ||
| US14/868,798 US9548276B2 (en) | 2012-04-18 | 2015-09-29 | Structure of backside copper metallization for semiconductor devices and a fabrication method thereof |
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| CN107579032B (en) * | 2017-07-27 | 2019-04-09 | 厦门市三安集成电路有限公司 | A kind of backside process method of compound semiconductor device |
| CN110767604B (en) * | 2019-10-31 | 2022-03-18 | 厦门市三安集成电路有限公司 | Compound semiconductor device and back copper processing method of compound semiconductor device |
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| CN1233856A (en) * | 1998-04-27 | 1999-11-03 | 国际商业机器公司 | Copper interconnection structure incorporating metal seed layer |
| TW200810126A (en) * | 2006-08-14 | 2008-02-16 | Au Optronics Corp | Bottom substrate for liquid crystal display device and the method of making the same |
| TW201109470A (en) * | 2009-09-04 | 2011-03-16 | Win Semiconductors Corp | A method of using an electroless plating for depositing a metal seed layer on semiconductor chips for the backside and via-hole manufacturing processes |
| CN103377914A (en) * | 2012-04-18 | 2013-10-30 | 稳懋半导体股份有限公司 | Improved structure of copper metal on back of semiconductor component and processing method thereof |
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| DE102006036798B4 (en) * | 2006-08-07 | 2013-08-29 | Infineon Technologies Ag | Electronic component and method for manufacturing |
| JP5585080B2 (en) * | 2007-12-04 | 2014-09-10 | 日立金属株式会社 | Electrode structure and manufacturing method thereof, circuit board, semiconductor module |
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Patent Citations (4)
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|---|---|---|---|---|
| CN1233856A (en) * | 1998-04-27 | 1999-11-03 | 国际商业机器公司 | Copper interconnection structure incorporating metal seed layer |
| TW200810126A (en) * | 2006-08-14 | 2008-02-16 | Au Optronics Corp | Bottom substrate for liquid crystal display device and the method of making the same |
| TW201109470A (en) * | 2009-09-04 | 2011-03-16 | Win Semiconductors Corp | A method of using an electroless plating for depositing a metal seed layer on semiconductor chips for the backside and via-hole manufacturing processes |
| CN103377914A (en) * | 2012-04-18 | 2013-10-30 | 稳懋半导体股份有限公司 | Improved structure of copper metal on back of semiconductor component and processing method thereof |
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