CN106558564A - The structure-improved of copper metal on back of semiconductor component - Google Patents
The structure-improved of copper metal on back of semiconductor component Download PDFInfo
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- CN106558564A CN106558564A CN201610146262.8A CN201610146262A CN106558564A CN 106558564 A CN106558564 A CN 106558564A CN 201610146262 A CN201610146262 A CN 201610146262A CN 106558564 A CN106558564 A CN 106558564A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4825—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
Abstract
A kind of structure-improved of copper metal on back of semiconductor component, wherein aforementioned structure-improved from top to bottom sequentially includes an active layers, a substrate, a back metal Seed Layer, a resistance to lasting high temperature buffer layer, a metal layer on back and an at least anti-oxidant metal layer, wherein the material of the back metal Seed Layer includes palladium and phosphorus, the material of the resistance to lasting high temperature buffer layer is nickel, silver or nickel alloy, and the material of metal layer on back is copper.Can make semiconductor wafer that there is the characteristic of resistance to lasting high-temperature operation with structure provided by the present invention；Each metal-layer structure at its back side is after persistency high temperature test, the integrity of its structure is maintained still, and be not likely to produce space, peel off or slight crack, the phenomenon of imperfect earth is not likely to produce, and effectively strengthens the reliability of the resistance to lasting high-temperature operation characteristic and chip of chip.
Description
Technical field
The present invention relates to a kind of structure-improved of copper metal on back of semiconductor component, espespecially one kind with copper as the back of the body
Face metal level, back metal Seed Layer include palladium (Pd) and phosphorus (P), and insert between aforementioned two-layer
One resistance to lasting high temperature buffer layer, makes semiconductor element have the structure-improved of resistance to lasting high-temperature operation characteristic.
Background technology
The processing procedure of back face metalization, the system of the back face metalization would generally be included in the middle of the processing procedure of semiconductor element
Journey is related to the characteristics such as rupture strength, radiating and the ground connection of semiconductor element.1st figure is one existing half
Conductor element copper metal on back structural representation, wherein structure include a substrate 101, a diffusion barrier successively
105, one stress relieving metal level 107 of layer, a metal layer on back 109 and an anti oxidation layer 111；Wherein
The diffusion impervious layer 105 is formed under the substrate 101, and the material of the diffusion impervious layer 105 is tantalum nitride
(TaN), major function is to stop that other metal materials diffuse into the substrate 101, and then element is produced
Raw adverse effect；The stress relieving metal level 107 is formed under the diffusion impervious layer 105, and the stress disappears
Except the material of metal level 107 is golden (Au), major function is to slow down or eliminate its lower structure because uneven
Expansion or shrinkage institute caused by structure peel off；The material of the metal layer on back 109 is copper (Cu), and which is thick
Degree need to support the substrate 101 stress suffered in encapsulation enough, while can also help on the substrate 101
Element radiating；The material of the anti oxidation layer 111 is golden (Au), can prevent the metal layer on back 109 from aoxidizing.
But with tantalum nitride (TaN) as diffusion impervious layer, with golden (Au) as stress relieving metal level,
Again with copper (Cu) as metal layer on back, the selection of this three-layer structure material is for semiconductor element high temperature resistant
The performance of operation is simultaneously preferable not to the utmost；The radiating of modem semiconductor devices and high-temperature stability are critically important problems,
If the high-temperature stability of the element is undesirable, semiconductor element may be caused because overheated and impaired, especially when half
When conductor element has back side guide hole, the depth-to-width ratio of usual back side guide hole is all very big, and under high-temperature operation, this three
Rotating fields are easier to produce space, the phenomenons such as slight crack, stripping occur, cause the situation of imperfect earth, and make
The semiconductor element is damaged.
In view of this, in order to improve above-mentioned shortcoming, the present invention proposes a kind of resistance to lasting high-temperature operation to the present invention
Copper metal on back of semiconductor component structure-improved, not only can effectively lift the high temperature resistant of semiconductor element
Operating characteristic, reduces element because of overheated and impaired probability, while and the heat-conducting effect of chip can be improved, and
And reduce material cost.
The content of the invention
Present invention is primarily targeted at providing a kind of structure-improved of copper metal on back of semiconductor component, help
In the resistance to lasting high-temperature operation characteristic of lift elements.
In order to reach above-mentioned purpose, the present invention provides a kind of copper metal on back of semiconductor component structure-improved,
Including：One active layers, a substrate, a back metal Seed Layer, a resistance to lasting high temperature buffer layer and a back of the body
Face metal level.The active layers are formed at a front of the substrate, and the active layers include an at least IC.
The back metal Seed Layer is formed at a back side of the substrate, and constitutes the material bag of the back metal Seed Layer
Containing palladium and phosphorus.The resistance to lasting high temperature buffer layer is formed at the lower section of the back metal Seed Layer.The back-side gold
Category layer is formed at the lower section of the resistance to lasting high temperature buffer layer, and to constitute the material of the metal layer on back be copper.
In an embodiment, be contained in the back metal Seed Layer palladium distribution be contained in the back metal
The distribution of the phosphorus of Seed Layer at least partly mutually overlaps.
In an embodiment, the palladium for being contained in the back metal Seed Layer is to be distributed evenly in the back metal
Seed Layer, and to be contained in the phosphorus of the back metal Seed Layer be to be distributed evenly in the back metal Seed Layer.
In an embodiment, the palladium for being contained in the back metal Seed Layer is distributed across being closer to being somebody's turn to do for the substrate
The back side, and the phosphorus for being contained in the back metal Seed Layer is distributed across being closer to the resistance to lasting high temperature buffer layer.
In an embodiment, the back metal Seed Layer includes one first sublevel and one second sublevel, constitutes
The material of first sublevel be palladium, and constitute second sublevel material be phosphorus.
In an embodiment, first sublevel is formed at the back side of the substrate, and second sublevel is formed at this
The lower section of the first sublevel, and the resistance to lasting high temperature buffer layer is formed at the lower section of second sublevel.
In an embodiment, the material for constituting the resistance to lasting high temperature buffer layer is nickel alloy.
In an embodiment, the material for constituting the resistance to lasting high temperature buffer layer is nickel.
In an embodiment, the material for constituting the resistance to lasting high temperature buffer layer is silver.
In an embodiment, a thickness of the resistance to lasting high temperature buffer layer is more thanAnd be less thanGreatly
InAnd be less thanIt is more thanAnd be less thanIt is more thanAnd be less than
It is more thanAnd be less thanIt is more thanAnd be less thanIt is more thanAnd be less than
It is more thanAnd be less thanIt is more thanAnd be less thanOr be more thanAnd be less than
In an embodiment, an at least anti-oxidant metal layer is further included, wherein an at least anti-oxidant metal layer
It is formed at the lower section of the metal layer on back.
In an embodiment, the material for constituting an at least anti-oxidant metal layer is included selected from one of following group：
Nickel, gold, palladium, vanadium, nickel billon, Ni-Pd alloy, Polarium, nickel alloy and nickel-vanadium alloy.
In an embodiment, an at least guide hole is further included, a wherein at least guide hole is formed at being somebody's turn to do for the substrate
The back side, an inner surface of an at least guide hole are covered by the back metal Seed Layer.
In an embodiment, a thickness of the back metal Seed Layer is more thanAnd be less thanIt is more thanAnd be less thanIt is more thanAnd be less thanIt is more thanAnd be less thanIt is more thanAnd be less thanIt is more thanAnd be less thanIt is more thanAnd be less thanIt is more thanAnd be less thanIt is more thanAnd be less thanOr be more thanAnd be less than
To further appreciate that the present invention, preferred embodiment is below lifted, coordinate schema, figure number, by the present invention
Concrete constitution content and its effect for being reached describe in detail it is as follows.
Description of the drawings
Cross-sectional views of the Fig. 1 for the copper metal on back of prior art.
Fig. 2A is the structure improved specific embodiment of copper metal on back of semiconductor component of the present invention in the back side
Cross-sectional view before copper metallization.
Fig. 2 B are the section of the structure improved specific embodiment of copper metal on back of semiconductor component of the present invention
Structural representation.
Fig. 2 C are the structure improved specific embodiment of copper metal on back of semiconductor component of the present invention in the back side
Metal level forms the cross-sectional view of street shape groove.
Fig. 2 D be the present invention the structure improved specific embodiment of copper metal on back of semiconductor component formed to
Cross-sectional view after a few anti-oxidant metal layer.
Fig. 2 E are the section of the structure improved another specific embodiment of copper metal on back of semiconductor component of the present invention
Structural representation.
Fig. 2 F are the structure improved another specific embodiment of copper metal on back of semiconductor component of the present invention in the back side
Metal level forms the cross-sectional view of street shape groove.
Fig. 2 G are that the structure improved another specific embodiment of copper metal on back of semiconductor component of the present invention is formed
Cross-sectional view after an at least anti-oxidant metal layer.
Partial enlarged drawings of Fig. 2 H for Fig. 2 B.
Fig. 3 A be the present invention copper metal on back of semiconductor component structure-improved Jing after persistency high temperature test, then
Analyzed with Energy dispersive x-ray spectrogrph (EDS, Energy-Dispersive X-Ray Spectroscope)
The analysis result of the structure of the c-c ' hatchings in Fig. 2 H.
The test result of Fig. 3 B local display Fig. 3 A.
Description of reference numerals：101- substrates；105- diffusion impervious layers；107- stress relieving metal levels；109- is carried on the back
Face metal level；111- anti oxidation layers；201- substrates, 203- active layers；205- back metal Seed Layers；207-
Resistance to lasting high temperature buffer layer；209- metal layer on back；211- anti-oxidant metal layers；213- guide holes；215- grooves；
The first sublevels of 11-；The second sublevels of 12-.
Specific embodiment
2A figures are the structure improved specific embodiment of copper metal on back of semiconductor component of the present invention in the back of the body
Cross-sectional view before the copper metallization of face.Including a substrate 201, active layers 203 and at least
One guide hole 213.Substrate 201 typically uses GaAs (GaAs), indium phosphide (InP), gallium nitride (GaN)
Or the semi-conducting material such as carborundum (SiC) is constituted.The front of substrate 201 is provided with an active layers 203,
And active layers 203 are then to include an at least IC.As the IC in active layers 203 is needed
Earth point is wanted, therefore the back side guide hole 213 of requirement can be produced with etching technique at the back side of substrate 201,
The ground connection of the IC that can be allowed by back side guide hole 213 in active layers 203 is connected to distal end configuration
Access area.
2B figures are cuing open for the structure improved specific embodiment of copper metal on back of semiconductor component of the present invention
Face structural representation.Its primary structure is roughly the same with the embodiment shown in 2A figures, only, wherein a back side
Metal seed layer 205 is formed at a back side of substrate 201, a resistance to lasting high temperature buffer layer 207 and is formed at the back of the body
The lower section of face metal seed layer 205 and a metal layer on back 209 are formed at resistance to lasting high temperature buffer layer 207
Lower section.Back metal Seed Layer 205 covers the inner surface of the back side of substrate 201 and guide hole 213.
The material for constituting back metal Seed Layer 205 includes palladium and phosphorus.Constitute resistance to lasting high temperature buffer layer 207 compared with
Good material is nickel, nickel alloy or silver.The material for constituting metal layer on back 209 is copper.
In one embodiment, be contained in back metal Seed Layer 205 palladium distribution be contained in back metal
The distribution of the phosphorus of Seed Layer 205 at least partly mutually overlaps.In another embodiment, it is contained in back metal kind
The palladium and phosphorus of sublayer 205 is to mix.In another embodiment, it is contained in back metal Seed Layer
205 palladium and phosphorus are that part mixes.In another embodiment, back metal Seed Layer is contained in
205 palladium and phosphorus are to be uniformly mixed together, wherein the palladium for being contained in back metal Seed Layer 205 is equal
Back metal Seed Layer 205 is distributed in evenly, and to be contained in the phosphorus of back metal Seed Layer 205 be equably to divide
It is distributed in back metal Seed Layer 205.In another embodiment, part is contained in back metal Seed Layer 205
Palladium and phosphorus be to be uniformly mixed together.
In another embodiment, the palladium for being contained in back metal Seed Layer 205 is distributed across being closer to substrate 201
The back side, and the phosphorus for being contained in back metal Seed Layer 205 is distributed across being closer to resistance to lasting high temperature buffer layer
207。
Back metal Seed Layer 205 contains palladium and phosphorus, can be as a Diffusion Barrier, to prevent the back side
The copper metal of metal level 209 diffuses into substrate 201.Using palladium as back metal Seed Layer 205 material
A part, it is also possible to improve adhesive force to substrate 201.Additionally, using phosphorus as back metal seed
A part for the material of layer 205, can more improve prevents the copper metal of metal layer on back 209 from diffusing into base
Effect of plate 201.
2C figures are the structure improved specific embodiment of copper metal on back of semiconductor component of the present invention in the back of the body
Face metal level forms the cross-sectional view of street shape groove.Enforcement shown in its primary structure and 2B figures
Example is roughly the same, only, wherein defining street shape groove 215 in metal layer on back 209.Form street shape recessed
The structure of groove 215, is that an at least street is defined on metal layer on back 209 with exposure imaging technology first
The region of shape groove 215, then again to the metal layer on back 209 at least region of a street shape groove 215
Be etched, etch-stop is made in resistance to lasting high temperature buffer layer 207.
2D figures are that the structure improved specific embodiment of copper metal on back of semiconductor component of the present invention is formed
Cross-sectional view after an at least anti-oxidant metal layer.Embodiment shown in its primary structure and 2C figures
Roughly the same, only, one anti-oxidant metal layer 211 of wherein at least is formed at the lower section of metal layer on back 209.
Therefore metal layer on back 209 and street shape groove 215 are covered by an at least anti-oxidant metal layer 211,
So as to prevent the oxidation of metal layer on back 209.The material for constituting an at least anti-oxidant metal layer 211 includes
Selected from the one of following group：Nickel, gold, palladium, vanadium, nickel billon, Ni-Pd alloy, Polarium, nickel
Alloy and nickel-vanadium alloy.In a preferred embodiment, at least an anti-oxidant metal layer 211 contains one
Layer gold and a nickel-vanadium alloy layer.
2E figures are cuing open for the structure improved another specific embodiment of copper metal on back of semiconductor component of the present invention
Face structural representation.Embodiment shown in its primary structure and 2B figure is roughly the same, only, wherein back-side gold
Category Seed Layer 205 includes one first sublevel 11 and one second sublevel 12.Constitute the material of the first sublevel 11
For palladium, and the first sublevel 11 is formed at the back side of substrate 201.The material for constituting the second sublevel 12 is phosphorus,
And second sublevel 12 be formed at the lower section of the first sublevel 11.And resistance to lasting high temperature buffer layer 207 is formed at
The lower section of quadratic-layer 12.Because palladium can improve the adhesive force to substrate 201, therefore back metal Seed Layer
205 the first sublevel 11 is designed to be formed at the back side of substrate 201.And because phosphorus can more be improved and be prevented
The copper metal of metal layer on back 209 diffuses into effect of substrate 201, therefore back metal Seed Layer 205
The second sublevel 12 be designed to be formed between the first sublevel 11 and resistance to lasting high temperature buffer layer 207.
2F figures are the structure improved another specific embodiment of copper metal on back of semiconductor component of the present invention in the back of the body
Face metal level forms the cross-sectional view of street shape groove.Enforcement shown in its primary structure and 2E figures
Example is roughly the same, only, wherein defining street shape groove 215 in metal layer on back 209.Form street shape recessed
The structure of groove 215, defines an at least street shape with exposure imaging technology first on metal layer on back 209
The region of groove 215, then again to the metal layer on back 209 at least region of a street shape groove 215
Be etched, etch-stop is made in resistance to lasting high temperature buffer layer 207.
2G figures are the structure improved another specific embodiment shape of copper metal on back of semiconductor component of the present invention
Cross-sectional view into after an at least anti-oxidant metal layer.Enforcement shown in its primary structure and 2F figures
Example is roughly the same, and only, one anti-oxidant metal layer 211 of wherein at least is formed at the lower section of metal layer on back 209.
Therefore metal layer on back 209 and street shape groove 215 are covered by an at least anti-oxidant metal layer 211,
So as to prevent the oxidation of metal layer on back 209.The material for constituting an at least anti-oxidant metal layer 211 includes
Selected from the one of following group：Nickel, gold, palladium, vanadium, nickel billon, Ni-Pd alloy, Polarium, nickel
Alloy and nickel-vanadium alloy.In a preferred embodiment, at least an anti-oxidant metal layer 211 contains one
Layer gold and a nickel-vanadium alloy layer.
Present invention is primarily targeted at providing a kind of structure-improved of copper metal on back of semiconductor component, help
In the resistance to lasting high-temperature operation characteristic of lift elements.The structure-improved of copper metal on back of semiconductor component must be able to
By persistency high temperature test (350 DEG C, 30 minutes).Therefore, the improvement of copper metal on back of semiconductor component
Structure it is necessary to have globality consider.First, back metal Seed Layer 205 is to substrate 201 (GaAs)
There must be good adhesive force.And in the present invention, the palladium in back metal Seed Layer 205 is contained in substrate
201 (GaAs) have good adhesive force.Secondly, in addition it is also necessary to have good diffusion barrier layer, to prevent
The copper metal of metal layer on back 209 diffuses into substrate 201.The palladium being contained in back metal Seed Layer 205
Also the function with Diffusion Barrier, can prevent the copper metal of the metal layer on back 209 of part from diffusing into substrate
201.But effect of palladium is not good enough.Therefore, the structure-improved of copper metal on back of semiconductor component of the invention
Back metal Seed Layer 205 contain palladium and phosphorus.The Diffusion Barrier function of wherein phosphorus is very distinguished, energy
The copper metal for being enough more effectively prevented from metal layer on back 209 diffuses into substrate 201.It is contained in back metal
Both palladium and phosphorus in Seed Layer 205 can highly prevent the copper metal of metal layer on back 209 from diffusing into
Substrate 201.In one embodiment, the distribution of the palladium in back metal Seed Layer 205 is contained in is relatively close to
During substrate 201, palladium can more play its effect with the good adhesive force of substrate 201 (GaAs).And
The distribution of the phosphorus being contained in back metal Seed Layer 205 is then closer to resistance to lasting high temperature buffer layer 207, can be with
Palladium plays the effect for preventing the copper metal of metal layer on back 209 from diffusing into substrate 201 simultaneously.And wherein
Resistance to lasting high temperature buffer layer 207 is made up of nickel, silver or nickel alloy.Select the main of nickel, silver or nickel alloy
Factor is considering in each adjacent intermetallic mutual fusibleness.Metal layer on back 209 (copper) and resistance to lasting height
Warm cushion 207 (nickel, silver or nickel alloy) is at 350 DEG C with good mutual fusibleness.Therefore, Jing Guochi
Long property high temperature test (350 DEG C, 30 minutes), metal layer on back 209 (copper) and resistance to lasting high-temperature buffer
207 (nickel, silver or nickel alloy) of layer can be mutually melted together near border each other well.Similarly, it is resistance to hold
High temperature buffer layer 207 (nickel, silver or nickel alloy) and back metal Seed Layer 205 (palladium) are at 350 DEG C long
When with good mutual fusibleness.Therefore, it is through persistency high temperature test (350 DEG C, 30 minutes), resistance to lasting
High temperature buffer layer 207 (nickel, silver or nickel alloy) and back metal Seed Layer 205 (palladium) can be on sides each other
Mutually it is melted together near boundary well.In the optimal embodiment, copper metal on back of semiconductor component changes
The design of good structure includes back metal Seed Layer 205 (containing palladium and phosphorus), resistance to lasting high temperature buffer layer
207 (nickel, silver or nickel alloys) and metal layer on back 209 (copper).This copper metal on back of semiconductor component
Structure improved design can pass through persistency high temperature test (350 DEG C, 30 minutes).And it is high through persistency
After temperature test (350 DEG C, 30 minutes), do not have any metal-stripping phenomenon or produce any unit
The imperfect earth of part.Therefore, the reliability of element significantly can be lifted.
2H figures are the partial enlarged drawing of 2B figures.3A figures are the semiconductor element back side copper of the present invention
Metal structure-improved Jing after persistency high temperature test, then with Energy dispersive x-ray spectrogrph (EDS,
Energy-Dispersive X-Ray Spectroscope) c-c ' hatchings in analysis chart 2H structure point
Analysis result.Schemed by 3A, it is clear that when through persistency high temperature test (350 DEG C, 30 minutes)
Afterwards, metal layer on back 209 (copper) and resistance to lasting high temperature buffer layer 207 (nickel) are near border each other
Mutually it is melted together well.Overleaf metal level 209 (copper) and resistance to lasting high temperature buffer layer 207 (nickel)
Between not significantly border.Similarly, after persistency high temperature test (350 DEG C, 30 minutes),
Resistance to lasting high temperature buffer layer 207 (nickel) and back metal Seed Layer 205 (phosphorus, palladium) are attached on border each other
Closely mix well.The resistance to lasting high temperature buffer layer 207 (nickel) for even having part has diffused into base
The back side of plate 201 (GaAs), and mix with the substrate 201 (GaAs) of part.The wherein back side
Metal seed layer 205 contains phosphorus and palladium.The palladium for being wherein contained in back metal Seed Layer 205 is distribution
In the back side for being closer to substrate 201, and the phosphorus for being contained in back metal Seed Layer 205 is distributed across being closer to
Resistance to lasting high temperature buffer layer 207.Similarly, after persistency high temperature test (350 DEG C, 30 minutes),
Back metal Seed Layer 205 (phosphorus, palladium) and substrate 201 (GaAs) are mixed near border each other well
It is combined (especially this side of closer substrate 201, is contained in the palladium of back metal Seed Layer 205).
The phosphorus for being contained in back metal Seed Layer 205 is played the part of and prevents the copper metal of metal layer on back 209 from diffusing into base
The role of plate 201.From the point of view of by result, the copper metal for having partial rear metal level 209 diffuses into resistance to lasting
High temperature buffer layer 207 (nickel).The copper metal of also very least a portion of metal layer on back 209 is diffused into and is included
In the region of the phosphorus of back metal Seed Layer 205.However, being contained in the phosphorus resistance of back metal Seed Layer 205
The copper metal for having kept off the metal layer on back 209 of the overwhelming majority diffuses into substrate 201.The only back of the body of small part
The copper metal of face metal level 209 diffuses into substrate 201.Scheme please refer to 3B, be local display the
The test result of 3A figures.3B figures are roughly the same with 3A figures, and only, wherein substrate 201 (GaAs) does not show
Show in 3B figures.Distribution and the back of the body of the phosphorus of back metal Seed Layer 205 are more clearly illustrated by 3B figures
The distribution of the copper metal of face metal level 209.
One thickness of wherein resistance to lasting high temperature buffer layer 207 is more thanAnd be less thanIt is more than
And be less thanIt is more thanAnd be less thanIt is more thanAnd be less thanIt is more than
And be less thanIt is more thanAnd be less thanIt is more thanAnd be less thanIt is more than
And be less thanIt is more thanAnd be less thanOr be more thanAnd be less than
One thickness of wherein back metal Seed Layer 205 is more thanAnd be less thanIt is more thanAnd it is little
InIt is more thanAnd be less thanIt is more thanAnd be less thanIt is more thanAnd
It is less thanIt is more thanAnd be less thanIt is more thanAnd be less thanIt is more than
And be less thanIt is more thanAnd be less thanOr be more thanAnd be less than
A kind of structure improved manufacture method of the present invention more there is provided copper metal on back of semiconductor component, including
Following steps：A1：An active layers 203 are formed in a front of a substrate 201, wherein active layers 203 are wrapped
An at least IC is contained；A2：Formed a back metal Seed Layer 205 in a back side of substrate 201 with
The back side of substrate 201 is covered, wherein the material for constituting back metal Seed Layer 205 includes palladium and phosphorus；A3：
A resistance to lasting high temperature buffer layer 207 is formed to cover back metal Seed Layer 205；And A4：Form one to carry on the back
Face metal level 209 is to cover resistance to lasting high temperature buffer layer 207, wherein the material for constituting metal layer on back 209 is
Copper.The palladium for being wherein contained in back metal Seed Layer 205 is distributed across being closer to the back side of substrate 201, and
The phosphorus for being contained in back metal Seed Layer 205 is distributed across being closer to resistance to lasting high temperature buffer layer 207.
Additionally, a kind of structure improved manufacture method of copper metal on back of semiconductor component of the present invention is further included
Below step：An at least back side guide hole 213 is made in the back side of substrate 201 by using etching technique,
One inner surface of wherein back side guide hole 213 is covered by back metal Seed Layer 205.
Additionally, step A2 further includes below step：Form one first sublevel of back metal Seed Layer 205
11 in the back side of substrate 201, wherein the material for constituting the first sublevel 11 is palladium；And form back metal kind
One second sublevel 12 of sublayer 205 is under the first sublevel 11, wherein the material for constituting the second sublevel 12 is
Phosphorus, wherein resistance to lasting high temperature buffer layer 207 is formed under the second sublevel 12 of back metal Seed Layer 205
Side.
Additionally, a kind of structure improved manufacture method of copper metal on back of semiconductor component of the present invention is further included
Below step：The region of an at least street shape groove is defined on metal layer on back 209 with light shield；Etching
Metal layer on back 209 in the region of street shape groove；Termination is etched in resistance to lasting high temperature buffer layer 207, with
Street shape groove 215 is formed in metal layer on back 209；And form an at least anti-oxidant metal layer 211 to cover
Lid metal layer on back 209 and street shape groove 215 are preventing the oxidation of metal.
In sum, according to content disclosed above, a kind of copper metal on back of semiconductor component of the present invention
Structure-improved, is by using including back metal Seed Layer 205 (phosphorus, palladium), resistance to lasting high temperature buffer layer
The three-decker of 207 (nickel, silver or nickel alloys) and metal layer on back 209 (copper), and upper substrate of arranging in pairs or groups
201 (GaAs), the combination of the selection of its material cause each metal-layer structure at its back side high by persistency
After temperature test, the integrity of its structure is still maintained, and is not likely to produce space, peeled off or slight crack, be not likely to produce
The phenomenon of imperfect earth, and effectively strengthen the reliability of the resistance to lasting high-temperature operation characteristic and chip of chip.
And effectively stop that the copper metal of metal layer on back 209 diffuses into substrate 201.Therefore, the present invention really may be used
Reach the expected purpose of invention, there is provided a kind of structure-improved of copper metal on back of semiconductor component, great industry
On the value that utilizes.
The above embodiment is only exemplary, does not constitute any restriction to the scope of the present invention.Ability
Field technique personnel should be understood that without departing from the spirit and scope of the invention can be to the technology of the present invention
The details and form of scheme is modified or is replaced, but these modifications and replacement each fall within the protection model of the present invention
In enclosing.
Claims (14)
1. a kind of structure-improved of copper metal on back of semiconductor component, including：
One substrate；
One active layers, are formed at a front of the substrate, and the wherein active layers include an at least IC；
One back metal Seed Layer, is formed at a back side of the substrate, wherein constituting the back metal seed
The material of layer includes palladium and phosphorus；
One resistance to lasting high temperature buffer layer, is formed at the lower section of the back metal Seed Layer；And
One metal layer on back, is formed at the lower section of the resistance to lasting high temperature buffer layer, wherein constituting the back-side gold
The material of category layer is copper.
2. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1, it is characterised in that bag
The distribution for being contained in the palladium of the back metal Seed Layer and the distribution of the phosphorus for being contained in the back metal Seed Layer are at least
Part mutually overlaps.
3. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1, it is characterised in that bag
The palladium for being contained in the back metal Seed Layer is to be distributed evenly in the back metal Seed Layer, and is contained in the back of the body
The phosphorus of face metal seed layer is to be distributed evenly in the back metal Seed Layer.
4. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1, it is characterised in that bag
The palladium for being contained in the back metal Seed Layer is distributed across being closer to the back side of the substrate, and is contained in the back side
The phosphorus of metal seed layer is distributed across being closer to the resistance to lasting high temperature buffer layer.
5. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1, it is characterised in that should
Back metal Seed Layer includes one first sublevel and one second sublevel, and the material for constituting first sublevel is palladium,
And constitute second sublevel material be phosphorus.
6. the structure-improved of copper metal on back of semiconductor component as claimed in claim 5, it is characterised in that should
First sublevel is formed at the back side of the substrate, and second sublevel is formed at the lower section of first sublevel, and should
Resistance to lasting high temperature buffer layer is formed at the lower section of second sublevel.
7. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1, it is characterised in that structure
Material into the resistance to lasting high temperature buffer layer is nickel alloy.
8. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1, it is characterised in that structure
Material into the resistance to lasting high temperature buffer layer is nickel.
9. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1, it is characterised in that structure
Material into the resistance to lasting high temperature buffer layer is silver.
10. the structure-improved of copper metal on back of semiconductor component as claimed in claim 1, it is characterised in that more
Including an at least anti-oxidant metal layer, a wherein at least anti-oxidant metal layer is formed at the metal layer on back
Lower section.
The structure-improved of 11. copper metal on back of semiconductor component as claimed in claim 10, it is characterised in that
The material for constituting an at least anti-oxidant metal layer is included selected from one of following group：Nickel, gold, palladium, vanadium,
Nickel billon, Ni-Pd alloy, Polarium, nickel alloy and nickel-vanadium alloy.
The structure-improved of 12. copper metal on back of semiconductor component as claimed in claim 1, it is characterised in that more
Including an at least guide hole, a wherein at least guide hole is formed at the back side of the substrate, an at least guide hole
One inner surface is covered by the back metal Seed Layer.
The structure-improved of 13. copper metal on back of semiconductor component as claimed in claim 1, it is characterised in that should
One thickness of resistance to lasting high temperature buffer layer is more thanAnd be less than
The structure-improved of 14. copper metal on back of semiconductor component as claimed in claim 1, it is characterised in that should
One thickness of back metal Seed Layer is more thanAnd be less than
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| US14/868,798 | 2015-09-29 | ||
| US14/868,798 US9548276B2 (en) | 2012-04-18 | 2015-09-29 | Structure of backside copper metallization for semiconductor devices and a fabrication method thereof |
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| CN106558564B CN106558564B (en) | 2019-08-27 |
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