CN106556806A - A kind of very big Measurement Method for Magnetic Field and device - Google Patents
A kind of very big Measurement Method for Magnetic Field and device Download PDFInfo
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- CN106556806A CN106556806A CN201611019155.5A CN201611019155A CN106556806A CN 106556806 A CN106556806 A CN 106556806A CN 201611019155 A CN201611019155 A CN 201611019155A CN 106556806 A CN106556806 A CN 106556806A
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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Abstract
The invention discloses a kind of very big Measurement Method for Magnetic Field and device, are related to magnetic field measurement technology field.Technical key point includes：1：The tunnel magneto resistance of four orthogonal configurations is placed in externally-applied magnetic field, and obtains the resistance of each tunnel magneto resistance；2：According to the angle of each tunnel magneto resistance free layer direction of magnetization of computing the resistor value and the reference layer direction of magnetization of four tunnel magneto resistance；3：According to magnetic field intensity H of the angle calcu-lation externally-applied magnetic field of the first tunnel magneto resistance, the free layer direction of magnetization of the 3rd tunnel magneto resistance and the reference layer direction of magnetization1And direction θ1；According to magnetic field intensity H of the angle calcu-lation externally-applied magnetic field of the second tunnel magneto resistance, the free layer direction of magnetization of the 4th tunnel magneto resistance and the reference layer direction of magnetization2And direction θ2；4：According to magnetic field intensity H1With magnetic field intensity H2Determine final magnetic field intensity H of externally-applied magnetic field, according to direction θ2With direction θ1Determine the final direction θ of externally-applied magnetic field.
Description
Technical field
The present invention relates to magnetic field measurement technology field, especially a kind of measurement side of the magnetic field intensity for tremendous range
Method.
Background technology
When magnetic field to be measured is less with the good linearity, certainty of measurement preferably, works as external magnetic field to tunnel magneto resistance
Greatly (160Oe～2500Oe, Oe are unit of magnetic field strength --- oersted) when, tunnel magneto reference layer magnetic domain occurs significantly to revolve
Turn, tunnel magneto resistance enters saturation region.Existing measuring method does not adapt to the measurement in very big magnetic field completely, needs proposition one
Plant new, it is adaptable to very big Measurement Method for Magnetic Field.
The content of the invention
The technical problem to be solved is：For above-mentioned problem, there is provided a kind of to be applied to very big magnetic field
Measuring method and device.
A kind of very big Measurement Method for Magnetic Field that the present invention is provided, including：
Step 1：The tunnel magneto resistance of four orthogonal configurations is placed in externally-applied magnetic field, and obtains each tunnel magneto
The resistance of resistance；First tunnel magneto resistance and the 3rd tunnel magneto resistance are located on straight line, the second tunnel magneto resistance
It is located on another straight line with the 4th tunnel magneto resistance, the straight line is vertical with the another straight line；
Step 2：According to each tunnel magneto resistance free layer direction of magnetization of computing the resistor value and ginseng of four tunnel magneto resistance
Examine the angle of layer direction of magnetization；
Step 3：According to the free layer direction of magnetization of the first tunnel magneto resistance and the angle of the reference layer direction of magnetization and
The magnetic field intensity of the free layer direction of magnetization of the 3rd tunnel magneto resistance and the angle calcu-lation externally-applied magnetic field of the reference layer direction of magnetization
H1And direction θ1；According to the angle and the 4th of the free layer direction of magnetization and the reference layer direction of magnetization of the second tunnel magneto resistance
Magnetic field intensity H of the free layer direction of magnetization of tunnel magneto resistance and the angle calcu-lation externally-applied magnetic field of the reference layer direction of magnetization2And
Direction θ2；
Step 4：According to magnetic field intensity H1With magnetic field intensity H2Determine final magnetic field intensity H of externally-applied magnetic field, according to direction θ2
With direction θ1Determine the final direction θ of externally-applied magnetic field.
Further, in step 2, magnetized according to its free layer direction of magnetization of computing the resistor value and the reference layer of tunnel magneto resistance
The angle equation in direction is：
In formula, Ravg=(Rmax+Rmin)/2, Δmax=(Rmax-Rmin)/Ravg, when the free layer direction of magnetization and reference layer magnetic
When change direction is identical, the resistance of tunnel magneto resistance is minimum, is Rmin；When the free layer direction of magnetization and reference layer direction of magnetization phase
Inverse time, the resistance of tunnel magneto resistance are maximum, are Rmax；Magnetize with reference layer for the tunnel magneto free layer direction of magnetization
The angle in direction；R is resistance of the tunnel magneto resistance in the externally-applied magnetic field.
Further, in step 3, magnetic field intensity H1And direction θ1Computing formula be：
In formula, HBRFor the amplitude of the reference layer internal bias field of four tunnel magneto resistance；For the first tunnel magneto
The angle of the resistance free layer direction of magnetization and the reference layer direction of magnetization；For the 3rd tunnel magneto resistance free layer direction of magnetization
With the angle of the reference layer direction of magnetization.
Further, in step 3, magnetic field intensity H2And direction θ2Computing formula be：
In formula, HBRFor the amplitude of the reference layer internal bias field of four tunnel magneto resistance；For the second tunnel magneto
The angle of the resistance free layer direction of magnetization and the reference layer direction of magnetization；For the 4th tunnel magneto resistance free layer direction of magnetization
With the angle of the reference layer direction of magnetization.
Further, the step of final magnetic field intensity H of externally-applied magnetic field and final direction θ are determined in step 4 is further wrapped
Include,
H=H1=H2；
A kind of very big magnetic field measuring device that the present invention is provided, including：
Tunnel magneto resistance acquisition module, for obtaining four tunnel magneto resistance of orthogonal configuration in externally-applied magnetic field
Resistance；Wherein, the first tunnel magneto resistance and the 3rd tunnel magneto resistance are located on straight line, the second tunnel magneto resistance
It is located on another straight line with the 4th tunnel magneto resistance, the straight line is vertical with the another straight line；
The tunnel magneto resistance free layer direction of magnetization and reference layer direction of magnetization angle calcu-lation module, for according to four tunnels
Wear each tunnel magneto resistance free layer direction of magnetization of computing the resistor value of magnetic resistance resistance and the angle of the reference layer direction of magnetization；
The magnetic field intensity and direction precalculation module of externally-applied magnetic field, for the free layer magnetic according to the first tunnel magneto resistance
The free layer direction of magnetization for changing direction with the angle and the 3rd tunnel magneto resistance of the reference layer direction of magnetization is magnetized with reference layer
Magnetic field intensity H of the angle calcu-lation externally-applied magnetic field in direction1And direction θ1；According to the free layer magnetization side of the second tunnel magneto resistance
To the free layer direction of magnetization and the reference layer direction of magnetization of the angle with the reference layer direction of magnetization and the 4th tunnel magneto resistance
Angle calcu-lation externally-applied magnetic field magnetic field intensity H2And direction θ2；
The magnetic field intensity and direction determining module of externally-applied magnetic field, for according to magnetic field intensity H1With magnetic field intensity H2It is determined that outer
Plus magnetic field intensity H that magnetic field is final, according to direction θ2With direction θ1Determine the final direction θ of externally-applied magnetic field.
The tunnel magneto resistance free layer direction of magnetization is further used for reference layer direction of magnetization angle calcu-lation module, according to
Its free layer direction of magnetization of the computing the resistor value of tunnel magneto resistance with the angle equation of the reference layer direction of magnetization is：
In formula, Ravg=(Rmax+Rmin)/2, Δmax=(Rmax-Rmin)/Ravg, when the free layer direction of magnetization and reference layer magnetic
When change direction is identical, the resistance of tunnel magneto resistance is minimum, is Rmin；When the free layer direction of magnetization and reference layer direction of magnetization phase
Inverse time, the resistance of tunnel magneto resistance are maximum, are Rmax；Magnetize with reference layer for the tunnel magneto free layer direction of magnetization
The angle in direction；R is resistance of the tunnel magneto resistance in the externally-applied magnetic field.
The magnetic field intensity and direction precalculation module calculating magnetic field intensity H of externally-applied magnetic field1And direction θ1Formula be：
In formula, HBRFor the amplitude of the reference layer internal bias field of four tunnel magneto resistance；For the first tunnel magneto
The angle of the resistance free layer direction of magnetization and the reference layer direction of magnetization；For the 3rd tunnel magneto resistance free layer direction of magnetization
With the angle of the reference layer direction of magnetization.
The magnetic field intensity and direction precalculation module calculating magnetic field intensity H of externally-applied magnetic field2And direction θ2Formula be：
In formula, HBRFor the amplitude of the reference layer internal bias field of four tunnel magneto resistance；For the second tunnel magneto
The angle of the resistance free layer direction of magnetization and the reference layer direction of magnetization；For the 4th tunnel magneto resistance free layer direction of magnetization
With the angle of the reference layer direction of magnetization.
Using below equation, the magnetic field intensity and direction determining module of externally-applied magnetic field determines that the final magnetic field of externally-applied magnetic field is strong
Degree H and final direction θ：
H=H1=H2；
In sum, as a result of above-mentioned technical proposal, the invention has the beneficial effects as follows：
The very big Measurement Method for Magnetic Field that the present invention is provided realizes the accurate measurement to very big magnetic field, expands tunnel magneto
The magnetic field intensity measurement range of resistance.
Description of the drawings
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein：
Fig. 1 is the scattergram of tunnel magneto resistance in externally-applied magnetic field.
Fig. 2 is very big magnetic-field measurement vectogram.
Specific embodiment
All features disclosed in this specification, or disclosed all methods or during the step of, except mutually exclusive
Feature and/or step beyond, can combine by any way.
Any feature disclosed in this specification, unless specifically stated otherwise, can be equivalent or with similar purpose by other
Alternative features are replaced.I.e., unless specifically stated otherwise, each feature is an example in a series of equivalent or similar characteristics
.
First, the tunnel magneto resistance (I hereinafter referred to as resistance) of four orthogonal configurations, arrangement are placed in externally-applied magnetic field
As shown in Figure 1.Wherein resistance R1 and resistance R3 is located on straight line, and resistance R2 and resistance R4 is located on another straight line, and two
Bar line orthogonal.
According to above-mentioned arrangement, the very big magnetic-field measurement scattergram of four tunnel magneto resistance is as shown in Figure 2.With resistive reference
Layer biases field direction for reference direction, and four resistance are rotated by 90 ° quadrature arrangement successively.H in figure, θ are externally-applied magnetic field amplitude and side
To；FL is the compound direction of the free layer direction of magnetization of four resistance, can be approximately considered identical with externally-applied magnetic field direction；Four
Vector HBRRepresent amplitude and the direction of the reference layer internal bias field of four magnetic resistance resistance, four magnetic resistance resistance phases in the present embodiment
Together, it is taken as that their reference layer internal bias field amplitude is identical, the reference layer internal bias of adjacent two magnetic resistance resistance
Field direction is orthogonal；RL1,2,3,4The reference layer direction of magnetization of four resistance is expressed as, itself and externally-applied magnetic field and respective reference
The compound direction of layer internal bias field is consistent；For four resistance free layer direction of magnetizations and the reference layer direction of magnetization
Angle.
By the vector correlation of Fig. 2, the relation that can obtain four chip direction of magnetizations and externally-applied magnetic field is：
The amplitude of externally-applied magnetic field and direction can be calculated by the two of which of above-mentioned equation group.But only two electric
Resistance cannot calculate the magnetic field of whole two dimensional surface, such as when selecting resistance R1 and resistance R3 to calculate externally-applied magnetic field, it is clear that additional magnetic
When field is 0 °～180 ° and 180 °～360 °, minute surface is symmetrical, it is therefore necessary to first judge externally-applied magnetic field direction by two other resistance
Scope, then selects suitable two resistance to be calculated.
Using resistance R1 and resistance R3 as one group, can be calculated：
In formula, H1, θ1Respectively pass through R1And R3Calculated externally-applied magnetic field amplitude and direction.
Using resistance R2 and resistance R4 as another group, can be calculated：
In formula, H2, θ2Respectively pass through the calculated externally-applied magnetic field amplitudes of R2 and R4 and direction.
By the angle of above-mentioned two formula of comparison, externally-applied magnetic field amplitude can be obtained and direction is：
H=H1=H2
In above-mentioned formula, the angle of each tunnel magneto resistance free layer direction of magnetization and the reference layer direction of magnetization be to
What lower formula was tried to achieve.
The resistance of tunnel magneto resistance depends on the angle of its free layer direction of magnetization and the reference layer direction of magnetization.Work as freedom
When layer is identical with the reference layer direction of magnetization, resistance value is minimum, is Rmin, when free layer and the contrary reference layer direction of magnetization, resistance
Value is maximum, is Rmax。RminAnd RmaxCan be obtained by demarcation.
In externally-applied magnetic field, resistance value R of tunnel magneto resistance with the relation of free layer, the reference layer direction of magnetization is：
In formula, Ravg=(Rmax+Rmin)/2 be average resistance, Δmax=(Rmax-Rmin)/RavgFor maximum magnetic flux resistance variations
Rate.
Present invention also offers a set of and one-to-one floppy disk system of said method step.
The invention is not limited in aforesaid specific embodiment.The present invention is expanded to and any is disclosed in this manual
New feature or any new combination, and the arbitrary new method that discloses or the step of process or any new combination.
Claims (10)
1. a kind of very big Measurement Method for Magnetic Field, it is characterised in that include：
Step 1：The tunnel magneto resistance of four orthogonal configurations is placed in externally-applied magnetic field, and obtains each tunnel magneto resistance
Resistance；First tunnel magneto resistance and the 3rd tunnel magneto resistance are located on straight line, the second tunnel magneto resistance and the
Four tunnel magneto resistance are located on another straight line, and the straight line is vertical with the another straight line；
Step 2：According to each tunnel magneto resistance free layer direction of magnetization of computing the resistor value and reference layer of four tunnel magneto resistance
The angle of the direction of magnetization；
Step 3：According to the angle and the 3rd of the free layer direction of magnetization and the reference layer direction of magnetization of the first tunnel magneto resistance
Magnetic field intensity H of the free layer direction of magnetization of tunnel magneto resistance and the angle calcu-lation externally-applied magnetic field of the reference layer direction of magnetization1And
Direction θ1；According to the free layer direction of magnetization of the second tunnel magneto resistance and the angle of the reference layer direction of magnetization and the 4th tunnelling
Magnetic field intensity H of the free layer direction of magnetization of magnetic resistance resistance and the angle calcu-lation externally-applied magnetic field of the reference layer direction of magnetization2And direction
θ2；
Step 4：According to magnetic field intensity H1With magnetic field intensity H2Determine final magnetic field intensity H of externally-applied magnetic field, according to direction θ2With side
To θ1Determine the final direction θ of externally-applied magnetic field.
2. a kind of very big Measurement Method for Magnetic Field according to claim 1, it is characterised in that in step 2, according to tunnel magneto resistance
Its free layer direction of magnetization of computing the resistor value with the angle equation of the reference layer direction of magnetization be：
In formula, Ravg=(Rmax+Rmin)/2, Δmax=(Rmax-Rmin)/Ravg, when the free layer direction of magnetization and reference layer magnetization side
To it is identical when, the resistance of tunnel magneto resistance is minimum, is Rmin；When the free layer direction of magnetization and the contrary reference layer direction of magnetization,
The resistance of tunnel magneto resistance is maximum, is Rmax；For the tunnel magneto free layer direction of magnetization and the reference layer direction of magnetization
Angle；R is resistance of the tunnel magneto resistance in the externally-applied magnetic field.
3. a kind of very big Measurement Method for Magnetic Field according to claim 1, it is characterised in that in step 3, magnetic field intensity H1And
Direction θ1Computing formula be：
In formula, HBRFor the amplitude of the reference layer internal bias field of four tunnel magneto resistance；For the first tunnel magneto resistance
The angle of the free layer direction of magnetization and the reference layer direction of magnetization；For the 3rd tunnel magneto resistance free layer direction of magnetization and ginseng
Examine the angle of layer direction of magnetization.
4. a kind of very big Measurement Method for Magnetic Field according to claim 1, it is characterised in that in step 3, magnetic field intensity H2And
Direction θ2Computing formula be：
In formula, HBRFor the amplitude of the reference layer internal bias field of four tunnel magneto resistance；For the second tunnel magneto resistance
The angle of the free layer direction of magnetization and the reference layer direction of magnetization；For the 4th tunnel magneto resistance free layer direction of magnetization and ginseng
Examine the angle of layer direction of magnetization.
5. a kind of very big Measurement Method for Magnetic Field according to claim 1, it is characterised in that externally-applied magnetic field is determined in step 4
The step of final magnetic field intensity H and final direction θ further includes,
H=H1=H2；
6. a kind of very big magnetic field measuring device, it is characterised in that include：
Tunnel magneto resistance acquisition module, for obtaining the resistance of four tunnel magneto resistance of orthogonal configuration in externally-applied magnetic field
Value；Wherein, the first tunnel magneto resistance and the 3rd tunnel magneto resistance are located on straight line, the second tunnel magneto resistance and the
Four tunnel magneto resistance are located on another straight line, and the straight line is vertical with the another straight line；
The tunnel magneto resistance free layer direction of magnetization and reference layer direction of magnetization angle calcu-lation module, for according to four tunnelling magnetic
The each tunnel magneto resistance free layer direction of magnetization of computing the resistor value of resistance resistance and the angle of the reference layer direction of magnetization；
The magnetic field intensity and direction precalculation module of externally-applied magnetic field, for the free layer magnetization side according to the first tunnel magneto resistance
To the free layer direction of magnetization and the reference layer direction of magnetization of the angle with the reference layer direction of magnetization and the 3rd tunnel magneto resistance
Angle calcu-lation externally-applied magnetic field magnetic field intensity H1And direction θ1；According to the free layer direction of magnetization of the second tunnel magneto resistance with
The free layer direction of magnetization of the angle of the reference layer direction of magnetization and the 4th tunnel magneto resistance and the folder of the reference layer direction of magnetization
Angle calculates magnetic field intensity H of externally-applied magnetic field2And direction θ2；
The magnetic field intensity and direction determining module of externally-applied magnetic field, for according to magnetic field intensity H1With magnetic field intensity H2Determine additional magnetic
Final magnetic field intensity H in field, according to direction θ2With direction θ1Determine the final direction θ of externally-applied magnetic field.
7. a kind of very big magnetic field measuring device according to claim 6, it is characterised in that tunnel magneto resistance free layer magnetic
Change direction to be further used for reference layer direction of magnetization angle calcu-lation module, according to computing the resistor value its freedom of tunnel magneto resistance
Layer the direction of magnetization with the angle equation of the reference layer direction of magnetization be：
In formula, Ravg=(Rmax+Rmin)/2, Δmax=(Rmax-Rmin)/Ravg, when the free layer direction of magnetization and reference layer magnetization side
To it is identical when, the resistance of tunnel magneto resistance is minimum, is Rmin；When the free layer direction of magnetization and the contrary reference layer direction of magnetization,
The resistance of tunnel magneto resistance is maximum, is Rmax；For the tunnel magneto free layer direction of magnetization and the reference layer direction of magnetization
Angle；R is resistance of the tunnel magneto resistance in the externally-applied magnetic field.
8. a kind of very big magnetic field measuring device according to claim 6, it is characterised in that the magnetic field intensity of externally-applied magnetic field and
Direction precalculation module calculating magnetic field intensity H1And direction θ1Formula be：
In formula, HBRFor the amplitude of the reference layer internal bias field of four tunnel magneto resistance；For the first tunnel magneto resistance
The angle of the free layer direction of magnetization and the reference layer direction of magnetization；For the 3rd tunnel magneto resistance free layer direction of magnetization and ginseng
Examine the angle of layer direction of magnetization.
9. a kind of very big magnetic field measuring device according to claim 6, it is characterised in that the magnetic field intensity of externally-applied magnetic field and
Direction precalculation module calculating magnetic field intensity H2And direction θ2Formula be：
In formula, HBRFor the amplitude of the reference layer internal bias field of four tunnel magneto resistance；For the second tunnel magneto resistance
The angle of the free layer direction of magnetization and the reference layer direction of magnetization；For the 4th tunnel magneto resistance free layer direction of magnetization and ginseng
Examine the angle of layer direction of magnetization.
10. a kind of very big magnetic field measuring device according to claim 6, it is characterised in that the magnetic field intensity of externally-applied magnetic field
And direction determining module determines final magnetic field intensity H of externally-applied magnetic field and final direction θ using below equation：
H=H1=H2；
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| CN201611019155.5A CN106556806B (en) | 2016-11-18 | 2016-11-18 | A kind of greatly Measurement Method for Magnetic Field and device |
| PCT/CN2017/090549 WO2018090637A1 (en) | 2016-11-18 | 2017-06-28 | Maximal magnetic field measurement method and device |
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| CN201611019155.5A CN106556806B (en) | 2016-11-18 | 2016-11-18 | A kind of greatly Measurement Method for Magnetic Field and device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018090633A1 (en) * | 2016-11-18 | 2018-05-24 | 清华大学 | Optimized extremely-large magnetic field measuring method and device |
| WO2018090637A1 (en) * | 2016-11-18 | 2018-05-24 | 清华大学 | Maximal magnetic field measurement method and device |
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| CN1229196A (en) * | 1997-09-24 | 1999-09-22 | 西门子公司 | Sensing device for measuring external magnetic-field direction using magneto-resistance effect sensing device |
| CN1754080A (en) * | 2003-02-24 | 2006-03-29 | Hl-平面技术有限公司 | Magnetoresistive sensor for determining an angle or a position |
| CN102707246A (en) * | 2011-03-28 | 2012-10-03 | 新科实业有限公司 | Method for measuring longitudinal bias magnetic field in tunneling magnetoresistive sensor |
| CN103890598A (en) * | 2011-10-17 | 2014-06-25 | 株式会社电装 | Magnetic sensor |
| EP2860543A1 (en) * | 2013-10-11 | 2015-04-15 | Crocus Technology S.A. | Magnetic sensor cell for measuring three-dimensional magnetic fields |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106556806B (en) * | 2016-11-18 | 2018-03-13 | 清华大学 | A kind of greatly Measurement Method for Magnetic Field and device |
| CN106772149B (en) * | 2016-11-18 | 2018-07-06 | 清华大学 | The very big Measurement Method for Magnetic Field and device of a kind of optimization |
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2016
- 2016-11-18 CN CN201611019155.5A patent/CN106556806B/en active Active
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2017
- 2017-06-28 WO PCT/CN2017/090549 patent/WO2018090637A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1229196A (en) * | 1997-09-24 | 1999-09-22 | 西门子公司 | Sensing device for measuring external magnetic-field direction using magneto-resistance effect sensing device |
| CN1754080A (en) * | 2003-02-24 | 2006-03-29 | Hl-平面技术有限公司 | Magnetoresistive sensor for determining an angle or a position |
| CN102707246A (en) * | 2011-03-28 | 2012-10-03 | 新科实业有限公司 | Method for measuring longitudinal bias magnetic field in tunneling magnetoresistive sensor |
| CN103890598A (en) * | 2011-10-17 | 2014-06-25 | 株式会社电装 | Magnetic sensor |
| EP2860543A1 (en) * | 2013-10-11 | 2015-04-15 | Crocus Technology S.A. | Magnetic sensor cell for measuring three-dimensional magnetic fields |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2018090633A1 (en) * | 2016-11-18 | 2018-05-24 | 清华大学 | Optimized extremely-large magnetic field measuring method and device |
| WO2018090637A1 (en) * | 2016-11-18 | 2018-05-24 | 清华大学 | Maximal magnetic field measurement method and device |
| US11156679B2 (en) | 2016-11-18 | 2021-10-26 | Tsinghua University | Optimized extremely-large magnetic field measuring method and device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106556806B (en) | 2018-03-13 |
| WO2018090637A1 (en) | 2018-05-24 |
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