CN106556807B - Magnetic resistance static characteristic optimization method based on internal bias field and sensing direction - Google Patents

Magnetic resistance static characteristic optimization method based on internal bias field and sensing direction Download PDF

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Publication number
CN106556807B
CN106556807B CN201611024079.7A CN201611024079A CN106556807B CN 106556807 B CN106556807 B CN 106556807B CN 201611024079 A CN201611024079 A CN 201611024079A CN 106556807 B CN106556807 B CN 106556807B
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field
magnetic
bias
axis bias
sensing direction
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CN106556807A (en
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胡军
欧阳勇
何金良
王善祥
赵根
王中旭
曾嵘
庄池杰
张波
余占清
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Tsinghua University
Sichuan Energy Internet Research Institute EIRI Tsinghua University
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Tsinghua University
Sichuan Energy Internet Research Institute EIRI Tsinghua University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors

Abstract

The present invention relates to static nature optimisation technique fields, disclose a kind of magnetic resistance static characteristic optimization method based on internal bias field and sensing direction.Specifically includes the following steps: steady state value is set by easy axis bias-field, hard axis bias-field, the relation curve of absolute error and magnetic-field measurement range when establishing different sensing directions；Different hard axis bias-fields is chosen, keeps hard axis bias-field constant, the relation curve of easy axis bias-field and best sensing direction in the case that acquisition hard axis bias-field is constant；Different hard axis bias-fields is chosen, establishes using easy axis bias-field, hard axis bias axis and best sensing direction as the three-dimensional coordinate of variable, makes the smallest best sensing direction of absolute error under any easy axis bias-field and hard axis bias-field according to three-dimensional coordinate is available.Easy axis bias-field, hard axis bias axis and best sensing direction can be adjusted simultaneously, obtain bigger linear region.

Description

Magnetic resistance static characteristic optimization method based on internal bias field and sensing direction
Technical field
The present invention relates to static nature optimisation technique field, especially a kind of magnetic based on internal bias field and sensing direction Hinder static characteristic optimization method.
Background technique
In tunnel magneto chip development process, influence of the measurement accuracy to chip is extremely important.Static linear characteristic is tunnel Key property one of of the magnetoresistive chip in linear measurement is worn, so needing to reduce non-linear mistake by adjusting internal bias field Difference, and then improve measurement accuracy.
Due to the limitation of manufacture craft, the magnetostatic lotus of ferromagnetic layer and Neel are coupled on hard axis direction inside tunnel magneto Generate a big layer coupling energy, certain situations even result in hard axis bias-field absolute value be greater than 1 and electric bridge chip without The ideal range of linearity.Therefore, it can be reached by applying the range of linearity and the linearity that bias-field increases electric bridge chip in easy axis To ideal effect.
So to effectively reduce the adjustable various parameters of nonlinearity erron, measurement accuracy is improved with this.
Summary of the invention
The technical problems to be solved by the present invention are: in view of the above problems, providing a kind of based on internal bias The magnetic resistance static characteristic optimization method of field and sensing direction.
The technical solution adopted by the invention is as follows: a kind of magnetic resistance static characteristic based on internal bias field and sensing direction is excellent Change method, specifically includes the following steps:
Step 1, the easy axis bias-field of setting, hard axis bias-field and sensing direction are particular value, according to the output letter of sensor Number obtains change rate of magnetic reluctance on two-dimensional coordinate and normalizes the sensing curve of magnetic field dependence；
Step 2, the maximum value h for choosing specific magnetic-field measurement rangeFM, sensing curve is passed through into objective functionOptimization, wherein f (hF) be electric bridge chip output function, hFFor external magnetic field, hFM For the maximum value of magnetic-field measurement range, k, b are the sensitivity and biasing of chip, obtain sensitivity k, biasing b and absolute error Err；
Step 3, the maximum value h for choosing different magnetic-field measurement rangesFM, repetition step 2, the current easily axis bias-field of acquisition, The relationship of absolute error Err, sensitivity k, biasing b under hard axis bias-field and sensing direction value and magnetic-field measurement range is bent Line；
Step 4, the value for choosing N-1 different sensing directions, the N are the natural number greater than 2, repeat step 1-3, Obtain the relation curve of N absolute error Err and magnetic-field measurement range, the N absolute error Err and magnetic-field measurement range Relation curve is in the same two-dimensional coordinate, every absolute error Err and the corresponding different biography of the relation curve of magnetic-field measurement range Feel the value in direction；
Step 5 obtains specific magnetic fields measurement range and specific easily axis bias-field, hard axis biasing according to the two-dimensional coordinate Make the smallest best sensing direction of absolute error off field；
The different easy axis bias-field of step 6, setting keeps hard axis bias-field constant, repeats step 1-5, it is inclined to obtain hard axis Set field it is constant in the case where easily axis bias-field and best sensing direction relation curve；
Step 7, the different hard axis bias-field of setting, repeat step 1-6, establish with easy axis bias-field, hard axis bias axis and Best sensing direction is the three-dimensional coordinate of variable, available in any easy axis bias-field and hard axis bias-field according to three-dimensional coordinate Under make the smallest best sensing direction of absolute error.
Further, output function in the step 1 are as follows:
Wherein VSP, VSN, VOP, VONThe respectively positive-negative power of electric bridge chip and positive negative output；R1And R2Respectively indicate first Tunnel magneto resistance and the second tunnel magneto；ΔmaxFor maximum magnetoresistive ratio；For the free layer magnetic of the first tunnel magneto Change direction,For the free layer direction of magnetization of the second tunnelling magnetic group.
Further, the detailed process of the step 2 are as follows:
Step 21, the maximum value of magnetic field h for choosing specific measurement rangeFM, interception magnetic-field measurement range is-hFM~hFMBetween Sensing curve；
Step 22 is lived the sensing curve after intercepting using two parallel lines envelopes, and is made between two parallel lines Distance it is minimum；
Parallel lines among step 23, two parallel lines is the target line after optimization, the target line Slope and be respectively sensitivity k and biasing b with the intersection point of ordinate；
Step 24, to obtain envelope straight line and target line be absolute error Err at a distance from ordinate intersection point, or by institute It states sensitivity k and biases the value substitution objective function of bAcquire specific measurement The maximum value of magnetic field h of rangeFMUnder absolute error Err.
Compared with prior art, having the beneficial effect that and establish hard axis bias-field, easy axis bias-field by adopting the above technical scheme With the three-dimensional coordinate figure of best sensing direction, while the method for adjusting internal bias field and sensing direction parameter is obtained bigger Linear region；It can be with the best sensing of simple, intuitive obtained under any hard axis bias-field and easy axis bias-field by three-dimensional coordinate Direction.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the electric bridge model used.
Fig. 2 be free layer bias-field be (1,0.5) when, sensing direction be 90 ° when sensing curve analogous diagram.
Fig. 3 is free layer bias-field when being (1,0.5), absolute error and magnetic-field measurement range in the case of different sensing directions Schematic diagram.
Fig. 4 is that fixed easy axis biases the best sensing direction for being with another axis offset change figure.
Fig. 5 is best sensing direction with free layer internal bias variation diagram.
Specific embodiment
The present invention is described further with reference to the accompanying drawing.
As shown in Figs. 1-5, a kind of magnetic resistance static characteristic optimization method based on internal bias field and sensing direction, it is specific to wrap Include following steps:
Step 1, the easy axis bias-field of setting, hard axis bias-field and sensing direction are particular value, according to the output letter of sensor Number obtains change rate of magnetic reluctance on two-dimensional coordinate and normalizes the sensing curve of magnetic field dependence；
Step 2, the maximum value h for choosing specific magnetic-field measurement rangeFM, sensing curve is passed through into objective functionOptimization, wherein f (hF) be electric bridge chip output function, hFFor external magnetic field, hFM For the maximum value of magnetic-field measurement range, k, b are the sensitivity and biasing of chip, obtain sensitivity k, biasing b and absolute error Err；
Step 3, the maximum value h for choosing different magnetic-field measurement rangesFM, repetition step 2, the current easily axis bias-field of acquisition, The relationship of absolute error Err, sensitivity k, biasing b under hard axis bias-field and sensing direction value and magnetic-field measurement range is bent Line；
Step 4, the value for choosing N-1 different sensing directions, the N are the natural number greater than 2, repeat step 1-3, Obtain the relation curve of N absolute error Err and magnetic-field measurement range, the N absolute error Err and magnetic-field measurement range Relation curve is in the same two-dimensional coordinate, every absolute error Err and the corresponding different biography of the relation curve of magnetic-field measurement range Feel the value in direction；
Step 5 obtains specific magnetic fields measurement range and specific easily axis bias-field, hard axis biasing according to the two-dimensional coordinate Make the smallest best sensing direction of absolute error off field；
The different easy axis bias-field of step 6, setting keeps hard axis bias-field constant, repeats step 1-5, it is inclined to obtain hard axis Set field it is constant in the case where easily axis bias-field and best sensing direction relation curve；
Step 7, the different hard axis bias-field of setting, repeat step 1-6, establish with easy axis bias-field, hard axis bias axis and Best sensing direction is the three-dimensional coordinate of variable, available in any easy axis bias-field and hard axis bias-field according to three-dimensional coordinate Under make the smallest best sensing direction of absolute error.
It is as shown in Figure 1 the electric bridge model used, founding mathematical models are as follows:
Wherein hBFIndicate the internal bias field normalizing value of free layer, hFIndicate external magnetic field each layer normalizing value,For The free layer direction of magnetization of first tunnel magneto,For the free layer direction of magnetization of the second tunnelling magnetic group；θBFFor in free layer Portion bias magnetic field direction, θ are the sensing direction of external magnetic field, the pass of tunnel magneto resistance and free layer, the reference layer direction of magnetization System is Wherein R1And R2Respectively indicate the first tunnel Wear magnetic resistance resistance and the second tunnel magneto, ΔmaxFor maximum magnetoresistive ratio, RavgFor average resistance, establishing output function isWherein VSP, VSN, VOP, VONRespectively electric bridge chip Positive-negative power and positive negative output.
The embodiment of sensing direction θ=90 °: taking 1, for hard axis bias-field takes 0.5 with easy axis bias-field, according to output letter Number obtains change rate of magnetic reluctance on two-dimensional coordinate and normalizes the sensing curve of magnetic field dependence, such as block curve in Fig. 2.
It carries out the detailed process of step 2: choosing the maximum value h of specific magnetic-field measurement rangeFM, intercept magnetic-field measurement range For-hFM~hFMBetween sensing curve, h in this implementation columnFM2 are taken, the solid line in curve such as Fig. 2 is sensed；Utilize two parallel lines Envelope lives the sensing curve after intercepting, and makes the distance among two parallel lines minimum, and two parallel lines are as schemed Two dotted lines of middle two sides；Parallel lines between two parallel lines is the target line after optimization, the target line Slope and be respectively sensitivity k and biasing b with the intersection point of ordinate；Envelope straight line and target line are obtained in ordinate intersection point Distance be absolute error Err, or by the sensitivity k and biasing b value substitute into objective functionAcquire the maximum value h of specific magnetic-field measurement rangeFMAbsolute mistake under being 2 Poor Err.
Choose the maximum value h of different magnetic-field measurement rangesFM, easy axis is biased to 1, when hard axis is biased to 0.5 at this time, sensing Direction is 90 °, repeats step 2, and obtaining constant easy axis bias-field is that 1 and hard axis are biased in the case of field 0.5, and sensing direction is The relation curve of absolute error Err and magnetic-field measurement range at 90 °, such as the curve 3 in Fig. 3；
The value of different hard axis bias-fields, including 70 ° are chosen, 80 °, 100 °, 110 °, step 1-3 is repeated, obtains 5 The relationship of the relation curve of absolute error Err and magnetic-field measurement range, 5 absolute error Err and magnetic-field measurement range is bent Line is in the same two-dimensional coordinate；Easy axis is biased to 1 at this time, and hard axis is biased to 0.5, every absolute error Err and magnetic-field measurement model The relation curve enclosed corresponds to the value of different sensing directions, including 70 °, 80 °, 90 °, 100 °, 110 °, respectively corresponds in Fig. 3 Curve 1, curve 2, curve 3, curve 4 and curve 5.
Being obtained according to the two-dimensional coordinate makes under specific magnetic fields measurement range and specific hard axis bias-field, easy axis bias-field Obtain the smallest sensing direction analog value of absolute error.It is corresponding minimum that any one magnetic-field measurement range can be searched from two-dimensional coordinate Sensing direction value when absolute error.
Different easy axis bias-fields is set, keeps hard axis bias-field constant 0.5, repeats step 1-5, obtains hard axis bias-field The relation curve of easy axis bias-field and best sensing direction in the case where constant, as shown in Figure 4 with the curve of circle remittance abroad, at this time It can be seen that best sensing direction angle is biased with easy axis to be increased and reduces when hard axis bias-field is 0.5.
Different hard axis bias-fields is set, step 1-6 is repeated, is established with easy axis bias-field, hard axis bias axis and best biography Feel the three-dimensional coordinate that direction is variable, it is as described in Figure 5, available inclined in any easy axis bias-field and hard axis according to three-dimensional coordinate Set makes the smallest best sensing direction of absolute error off field.
The invention is not limited to specific embodiments above-mentioned.The present invention, which expands to, any in the present specification to be disclosed New feature or any new combination, and disclose any new method or process the step of or any new combination.If this Field technical staff is altered or modified not departing from the unsubstantiality that spirit of the invention is done, should belong to power of the present invention The claimed range of benefit.

Claims (3)

1. a kind of magnetic resistance static characteristic optimization method based on internal bias field and sensing direction, which is characterized in that including following Step:
Step 1, the easy axis bias-field of setting, hard axis bias-field and sensing direction are particular value, are existed according to the output function of sensor Change rate of magnetic reluctance is obtained on two-dimensional coordinate and normalizes the sensing curve of magnetic field dependence；
Step 2, the maximum value h for choosing specific magnetic-field measurement rangeFM, sensing curve is passed through into objective functionOptimization, wherein f (hF) be electric bridge chip output function, hFFor external magnetic field, hFM For the maximum value of magnetic-field measurement range, k, b are the sensitivity and biasing of chip, obtain sensitivity k, biasing b and absolute error Err；
Step 3, the maximum value h for choosing different magnetic-field measurement rangesFM, step 2 is repeated, current easily axis bias-field, hard axis are obtained The relation curve of absolute error Err, sensitivity k, biasing b and magnetic-field measurement range under bias-field and sensing direction value；
Step 4, the value for choosing N-1 different sensing directions, the N are the natural number greater than 2, repeat step 1-3, obtain The relation curve of N absolute error Err and magnetic-field measurement range, the relationship of the N absolute error Err and magnetic-field measurement range Curve is in the same two-dimensional coordinate, every absolute error Err and the corresponding different sensing side of the relation curve of magnetic-field measurement range To value；
Step 5 is obtained according to the two-dimensional coordinate under specific magnetic fields measurement range and specific easily axis bias-field, hard axis bias-field So that the smallest best sensing direction of absolute error；
The different hard axis bias-field of step 6, setting keeps easy axis bias-field constant, repeats step 1-5, obtains easy axis bias-field The relation curve of hard axis bias-field and best sensing direction in the case where constant；
Step 7, the different easy axis bias-field of setting, repeat step 1-6, establish with easy axis bias-field, hard axis bias axis and best Sensing direction is the three-dimensional coordinate of variable, is made under any easy axis bias-field and hard axis bias-field according to three-dimensional coordinate is available The smallest best sensing direction of absolute error.
2. the magnetic resistance static characteristic optimization method based on internal bias field and sensing direction as described in claim 1, feature It is, output function in the step 1 are as follows:
Wherein VSP, VSN, VOP, VONThe respectively positive-negative power of electric bridge chip and positive negative output；R1And R2Respectively indicate the first tunnelling Magnetic resistance resistance and the second tunnel magneto；ΔmaxFor maximum magnetoresistive ratio；For the free layer magnetization side of the first tunnel magneto To,For the free layer direction of magnetization of the second tunnelling magnetic group.
3. the magnetic resistance static characteristic optimization method based on internal bias field and sensing direction as claimed in claim 2, feature It is, the detailed process of the step 2 are as follows:
Step 21, the maximum value h for choosing specific magnetic-field measurement rangeFM, interception magnetic-field measurement range is-hFM~hFMBetween biography Feel curve；
Step 22, using two parallel lines envelopes live intercept after sensing curve, and make between two parallel lines away from From minimum；
Parallel lines among step 23, two parallel lines is the target line after optimization, the slope of the target line It and with the intersection point of ordinate is respectively sensitivity k and biasing b；
Step 24, to obtain envelope straight line and target line be absolute error Err at a distance from ordinate intersection point, or by the spirit The value of sensitivity k and biasing b substitute into objective functionAcquire specific magnetic-field measurement The maximum value h of rangeFMUnder absolute error Err.
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